LBGA Flash Memory 2,400+

Reset All

Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Screening Level	Terminal Form	Parallel or Serial	Operating Mode	Sector Size (Words)	Maximum Supply Current	No. of Words	Nominal Supply Voltage / Vsup (V)	Toggle Bit	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Alternate Memory Width	Sub-Category	Minimum Data Retention Time	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	No. of Sectors/Size	Command User Interface	Terminal Finish	Ready or Busy	Terminal Position	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Endurance	Maximum Clock Frequency (fCLK)	Width	Qualification	Maximum Write Cycle Time (tWC)	Boot Block	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	Page Size (words)	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Type	Maximum Standby Current	Length	Common Flash Interface	Maximum Access Time	Programming Voltage (V)	Data Polling
S29GL256S10DHB020	Infineon Technologies	FLASH		64	LBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100; TS 16949	BALL	PARALLEL	ASYNCHRONOUS	128K	100 mA	33554432 words	3	YES		8	GRID ARRAY, LOW PROFILE	BGA64,8X8,40	1		2	1 mm	105 Cel	3-STATE	32MX8	32M	-40 Cel	256	YES	TIN SILVER COPPER	YES	BOTTOM	S-PBGA-B64	3	3.6 V	1.4 mm	100000 Write/Erase Cycles		9 mm				268435456 bit	2.7 V	20 YEARS DATA RETENTION; 10000 ERASE/PROGRAM CYCLES	32	e1	30	260	NAND TYPE	.0002 Amp	9 mm	YES	100 ns	3	YES
S29GL256S10DHB023	Infineon Technologies	FLASH		64	LBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100; TS 16949	BALL	PARALLEL	ASYNCHRONOUS	128K	100 mA	33554432 words	3	YES		8	GRID ARRAY, LOW PROFILE	BGA64,8X8,40	1		2	1 mm	105 Cel	3-STATE	32MX8	32M	-40 Cel	256	YES		YES	BOTTOM	S-PBGA-B64		3.6 V	1.4 mm	100000 Write/Erase Cycles		9 mm				268435456 bit	2.7 V	20 YEARS DATA RETENTION; 10000 ERASE/PROGRAM CYCLES	32				NAND TYPE	.0002 Amp	9 mm	YES	100 ns	3	YES
S29GL256S10DHV020	Infineon Technologies	FLASH		64	LBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	128K	100 mA	33554432 words	3	YES		8	GRID ARRAY, LOW PROFILE	BGA64,8X8,40	1		2	1 mm	105 Cel	3-STATE	32MX8	32M	-40 Cel	256	YES	TIN SILVER COPPER	YES	BOTTOM	S-PBGA-B64	3	3.6 V	1.4 mm	100000 Write/Erase Cycles		9 mm				268435456 bit	2.7 V	20 YEARS DATA RETENTION; 10000 ERASE/PROGRAM CYCLES	32	e1	30	260	NAND TYPE	.0002 Amp	9 mm	YES	100 ns	3	YES
S29GL064S70FHI020	Infineon Technologies	FLASH	INDUSTRIAL	64	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	64K	80 mA	4194304 words	3	YES		16	GRID ARRAY, LOW PROFILE	BGA64,8X8,40	8		20	1 mm	85 Cel	3-STATE	4MX16	4M	-40 Cel	128			YES	BOTTOM	R-PBGA-B64	3	3.6 V	1.4 mm	100000 Write/Erase Cycles		11 mm				67108864 bit	2.7 V		8/16				NOR TYPE	.0001 Amp	13 mm		70 ns	3	YES
S29GL256P10FFI020	Infineon Technologies	FLASH	INDUSTRIAL	64	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	128K	110 mA	268435456 words	3	YES	3/3.3	1	GRID ARRAY, LOW PROFILE	BGA64,8X8,40	8	Flash Memories		1 mm	85 Cel		256MX1	256M	-40 Cel	256	YES	TIN SILVER COPPER	YES	BOTTOM	R-PBGA-B64	3	3.6 V	1.4 mm			11 mm	Not Qualified			268435456 bit	2.7 V		8/16	e1	40	260	NOR TYPE	.000005 Amp	13 mm	YES	100 ns	3	YES
S29GL512S10DHI010	Infineon Technologies	FLASH		64	LBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	128K	100 mA	67108864 words	3	YES		8	GRID ARRAY, LOW PROFILE	BGA64,8X8,40	1		2	1 mm	85 Cel	3-STATE	64MX8	64M	-40 Cel	512	YES	TIN SILVER COPPER	YES	BOTTOM	S-PBGA-B64	3	3.6 V	1.4 mm	100000 Write/Erase Cycles		9 mm			BOTTOM/TOP	536870912 bit	2.7 V	20 YEARS DATA RETENTION; 10000 ERASE/PROGRAM CYCLES	32	e1	30	260	NAND TYPE	.0001 Amp	9 mm	YES	100 ns	3	YES
S29CD032J1JFAM010	Cypress Semiconductor	FLASH	AUTOMOTIVE	80	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	2K,16K	90 mA	1048576 words	2.6	YES	1.8/2.6,2.6	32	GRID ARRAY, LOW PROFILE	BGA80,8X10,40		Flash Memories		1 mm	125 Cel		1MX32	1M	-40 Cel	16,62	YES	TIN LEAD	YES	BOTTOM	R-PBGA-B80	3	2.75 V	1.4 mm			11 mm	Not Qualified		BOTTOM	33554432 bit	2.5 V	SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE; BOTTOM BOOT BLOCK		e0		260	NOR TYPE	.00006 Amp	13 mm	YES	54 ns	2.7	YES
MT28EW512ABA1LPC-0SIT	Micron Technology	FLASH	INDUSTRIAL	64	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS			33554432 words	3			16	GRID ARRAY, LOW PROFILE		8			1 mm	85 Cel		32MX16	32M	-40 Cel			TIN SILVER COPPER		BOTTOM	R-PBGA-B64		3.6 V	1.4 mm			11 mm				536870912 bit	2.7 V			e1	30	260	NOR TYPE		13 mm		95 ns	3
S29GL01GT11FHIV40	Infineon Technologies	FLASH	INDUSTRIAL	64	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS			67108864 words	3			16	GRID ARRAY, LOW PROFILE					1 mm	85 Cel		64MX16	64M	-40 Cel					BOTTOM	R-PBGA-B64	3	3.6 V	1.4 mm			11 mm				1073741824 bit	2.7 V								13 mm		110 ns	2.7
S29GL064S90DHVV10	Infineon Technologies	FLASH	INDUSTRIAL	64	LBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	64K	80 mA	4194304 words	3	YES		16	GRID ARRAY, LOW PROFILE	BGA64,8X8,40	8		20	1 mm	105 Cel	3-STATE	4MX16	4M	-40 Cel	128			YES	BOTTOM	S-PBGA-B64	3	3.6 V	1.4 mm	100000 Write/Erase Cycles		9 mm				67108864 bit	2.7 V		8/16				NOR TYPE	.0001 Amp	9 mm		90 ns	3	YES
S29GL512P11FAI010	Cypress Semiconductor	FLASH	INDUSTRIAL	64	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	128K	110 mA	536870912 words	3	YES	3/3.3	1	GRID ARRAY, LOW PROFILE	BGA64,8X8,40	8	Flash Memories		1 mm	85 Cel		512MX1	512M	-40 Cel	512	YES	TIN LEAD	YES	BOTTOM	R-PBGA-B64	3	3.6 V	1.4 mm			11 mm	Not Qualified			536870912 bit	2.7 V		8/16	e0			NOR TYPE	.000005 Amp	13 mm	YES	110 ns	3	YES
S29GL01GP11FAI010	Cypress Semiconductor	FLASH	INDUSTRIAL	64	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	128K	90 mA	1073741824 words	3	YES	3/3.3	1	GRID ARRAY, LOW PROFILE	BGA64,8X8,40	8	Flash Memories		1 mm	85 Cel		1GX1	1G	-40 Cel	1K	YES	TIN LEAD	YES	BOTTOM	R-PBGA-B64	3	3.6 V	1.4 mm			11 mm	Not Qualified			1073741824 bit	2.7 V		8/16	e0		260	NOR TYPE	.000005 Amp	13 mm	YES	110 ns	3	YES
S29GL01GT12DHN010	Infineon Technologies	FLASH	AUTOMOTIVE	64	LBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS			67108864 words	3			16	GRID ARRAY, LOW PROFILE					1 mm	125 Cel		64MX16	64M	-40 Cel					BOTTOM	S-PBGA-B64	3	3.6 V	1.4 mm			9 mm				1073741824 bit	2.7 V								9 mm		120 ns	2.7
S29GL256S10DHI020	Infineon Technologies	FLASH	INDUSTRIAL	64	LBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	64K	80 mA	33554432 words	3	YES	3/3.3	8	GRID ARRAY, LOW PROFILE	BGA64,8X8,40		Flash Memories		1 mm	85 Cel		32MX8	32M	-40 Cel	256	YES	TIN SILVER COPPER	YES	BOTTOM	S-PBGA-B64	3	3.6 V	1.4 mm			9 mm	Not Qualified			268435456 bit	2.7 V		16	e1	30	260	NOR TYPE	.0001 Amp	9 mm	YES	100 ns	2.7	YES
MT28EW512ABA1HPC-0SIT	Micron Technology	FLASH	INDUSTRIAL	64	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS			33554432 words	3			16	GRID ARRAY, LOW PROFILE		8			1 mm	85 Cel		32MX16	32M	-40 Cel					BOTTOM	R-PBGA-B64		3.6 V	1.4 mm			11 mm				536870912 bit	2.7 V				NOT SPECIFIED	NOT SPECIFIED	NOR TYPE		13 mm		95 ns	3
S29GL512T11DHB010	Infineon Technologies	FLASH	INDUSTRIAL	64	LBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	PARALLEL	ASYNCHRONOUS			33554432 words	3			16	GRID ARRAY, LOW PROFILE		8			1 mm	105 Cel		32MX16	32M	-40 Cel			TIN SILVER COPPER		BOTTOM	S-PBGA-B64	3	3.6 V	1.4 mm			9 mm				536870912 bit	2.7 V	CAN ALSO BE ORGANISED AS 512MX1		e1					9 mm		110 ns	2.7
MTFC16GLWDQ-4MAITZ	Micron Technology	FLASH CARD	INDUSTRIAL	100	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS			17179869184 words				8	GRID ARRAY, LOW PROFILE	BGA100,10X17,40				1 mm	85 Cel		16GX8	16G	-40 Cel					BOTTOM	R-PBGA-B100		3.6 V	1.703 mm		52 MHz	14 mm				137438953472 bit	2.7 V				NOT SPECIFIED	NOT SPECIFIED	NAND TYPE		18 mm
MTFC4GLGDQ-AITATR	Micron Technology	FLASH		100	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS			4294967296 words		NO		8	GRID ARRAY, LOW PROFILE	BGA100,10X17,40				1 mm	85 Cel		4GX8	4G	-40 Cel		NO	TIN SILVER COPPER		BOTTOM	R-PBGA-B100		3.6 V	1.4 mm		52 MHz	14 mm				34359738368 bit	2.7 V			e1	30	260	MLC NAND TYPE		18 mm				NO
PC28F512M29EWLA	Micron Technology	FLASH	INDUSTRIAL	64	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	128K	31 mA	33554432 words	3	YES	3/3.3	16	GRID ARRAY, LOW PROFILE	BGA64,8X8,40	8	Flash Memories		1 mm	85 Cel		32MX16	32M	-40 Cel	512	YES	Tin/Silver/Copper (Sn/Ag/Cu)	YES	BOTTOM	R-PBGA-B64		3.6 V	1.4 mm			11 mm	Not Qualified			536870912 bit	2.7 V		16/32	e1	30	260	NOR TYPE	.000225 Amp	13 mm	YES	100 ns	3	YES
S29GL256S11DHVV20	Infineon Technologies	FLASH		64	LBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	128K	100 mA	33554432 words	3	YES		8	GRID ARRAY, LOW PROFILE	BGA64,8X8,40	1		2	1 mm	105 Cel	3-STATE	32MX8	32M	-40 Cel	256	YES	TIN SILVER COPPER	YES	BOTTOM	S-PBGA-B64	3	3.6 V	1.4 mm	100000 Write/Erase Cycles		9 mm				268435456 bit	2.7 V	20 YEARS DATA RETENTION; 10000 ERASE/PROGRAM CYCLES	32	e1	30	260	NAND TYPE	.0002 Amp	9 mm	YES	110 ns	3	YES
S29GL512P11FFI020	Cypress Semiconductor	FLASH	INDUSTRIAL	64	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	128K	110 mA	536870912 words	3	YES	3/3.3	1	GRID ARRAY, LOW PROFILE	BGA64,8X8,40	8	Flash Memories		1 mm	85 Cel		512MX1	512M	-40 Cel	512	YES	TIN SILVER COPPER	YES	BOTTOM	R-PBGA-B64	3	3.6 V	1.4 mm			11 mm	Not Qualified			536870912 bit	2.7 V		8/16	e1	30	260	NOR TYPE	.000005 Amp	13 mm	YES	110 ns	3	YES
AM29LV128MH113RPCI	Spansion	FLASH	INDUSTRIAL	64	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	64K	80 mA	8388608 words	3.3	YES	1.8/3.3,3.3	16	GRID ARRAY, LOW PROFILE	BGA64,8X8,40	8	Flash Memories		1 mm	85 Cel		8MX16	8M	-40 Cel	256	YES	TIN LEAD	YES	BOTTOM	R-PBGA-B64	3	3.6 V	1.4 mm			11 mm	Not Qualified		BOTTOM/TOP	134217728 bit	3 V		4/8	e0		260	NOR TYPE	.000005 Amp	13 mm	YES	110 ns	3	YES
AM29PDL128G70PEF	Spansion	FLASH	INDUSTRIAL	80	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	8K,64K	45 mA	4194304 words	3	YES	3/3.3	32	GRID ARRAY, LOW PROFILE	BGA80,8X10,40	16	Flash Memories		1 mm	85 Cel		4MX32	4M	-40 Cel	16,254	YES	TIN SILVER COPPER	YES	BOTTOM	R-PBGA-B80	3	3.6 V	1.4 mm			10 mm	Not Qualified		BOTTOM/TOP	134217728 bit	2.7 V		4/8	e1	40	260	NOR TYPE	.000005 Amp	15 mm	YES	70 ns	3	YES
M29W128GH70ZS6E	Micron Technology	FLASH	INDUSTRIAL	64	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	128K	20 mA	8192 words	3	YES	3/3.3	16	GRID ARRAY, LOW PROFILE	BGA64,8X8,40	8	Flash Memories		1 mm	85 Cel		8KX16	8K	-40 Cel	128	YES	TIN SILVER COPPER	YES	BOTTOM	R-PBGA-B64		3.6 V	1.4 mm			11 mm	Not Qualified	.00007 ms		131072 bit	2.7 V		8/16	e1			NOR TYPE	.0001 Amp	13 mm	YES	70 ns	3	YES
MTFC8GLWDQ-3MAITZ	Micron Technology	FLASH CARD	INDUSTRIAL	100	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS			8589934592 words				8	GRID ARRAY, LOW PROFILE	BGA100,10X17,40				1 mm	85 Cel		8GX8	8G	-40 Cel					BOTTOM	R-PBGA-B100		3.6 V	1.703 mm		52 MHz	14 mm				68719476736 bit	2.7 V				NOT SPECIFIED	NOT SPECIFIED	NAND TYPE		18 mm
PC28F128M29EWLA	Micron Technology	FLASH	INDUSTRIAL	64	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	128K	25 mA	8388608 words	3	YES	3/3.3	16	GRID ARRAY, LOW PROFILE	BGA64,8X8,40	8	Flash Memories		1 mm	85 Cel		8MX16	8M	-40 Cel	128	YES	TIN SILVER COPPER	YES	BOTTOM	R-PBGA-B64		3.6 V	1.4 mm			11 mm	Not Qualified			134217728 bit	2.7 V		8/16	e1			NOR TYPE	.00012 Amp	13 mm	YES	65 ns	3	YES
S29AL016J70FFI010	Infineon Technologies	FLASH	INDUSTRIAL	64	LBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	30 mA	1048576 words	3	YES	3/3.3	16	GRID ARRAY, LOW PROFILE	BGA64,8X8,40	8	Flash Memories		1 mm	85 Cel		1MX16	1M	-40 Cel	1,2,1,31	YES		YES	BOTTOM	S-PBGA-B64	3	3.6 V	1.4 mm			9 mm	Not Qualified		TOP	16777216 bit	2.7 V	TOP BOOT BLOCK					NOR TYPE	.000005 Amp	9 mm	YES	70 ns	3	YES
S29GL01GP11FAIR10	Cypress Semiconductor	FLASH	INDUSTRIAL	64	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	128K	110 mA	1073741824 words	3.3	YES	3.3	1	GRID ARRAY, LOW PROFILE	BGA64,8X8,40	8	Flash Memories		1 mm	85 Cel		1GX1	1G	-40 Cel	1K	YES	TIN LEAD	YES	BOTTOM	R-PBGA-B64	3	3.6 V	1.4 mm			11 mm	Not Qualified			1073741824 bit	3 V		8/16	e0		260	NOR TYPE	.000005 Amp	13 mm	YES	110 ns	3	YES
S29GL064A11FFIR40	Cypress Semiconductor	FLASH	INDUSTRIAL	64	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS			4194304 words	3.3			16	GRID ARRAY, LOW PROFILE		8			1 mm	85 Cel		4MX16	4M	-40 Cel			TIN SILVER COPPER		BOTTOM	R-PBGA-B64	3	3.6 V	1.4 mm			11 mm			BOTTOM	67108864 bit	3 V			e1	40	260	NOR TYPE		13 mm		110 ns	3
S29GL064N11FFIV20	Infineon Technologies	FLASH	INDUSTRIAL	64	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	64K	50 mA	4194304 words	3	YES	1.8/3.3,3/3.3	16	GRID ARRAY, LOW PROFILE	BGA64,8X8,40	8	Flash Memories		1 mm	85 Cel		4MX16	4M	-40 Cel	128	YES	TIN SILVER COPPER	YES	BOTTOM	R-PBGA-B64	3	3.6 V	1.4 mm			11 mm	Not Qualified		BOTTOM/TOP	67108864 bit	2.7 V		8/16	e1	30	260	NOR TYPE	.000005 Amp	13 mm	YES	110 ns	3	YES
S29GL064S70FHI030	Infineon Technologies	FLASH	INDUSTRIAL	64	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	8K,64K	80 mA	4194304 words	3	YES		16	GRID ARRAY, LOW PROFILE	BGA64,8X8,40	8		20	1 mm	85 Cel	3-STATE	4MX16	4M	-40 Cel	8,127			YES	BOTTOM	R-PBGA-B64	3	3.6 V	1.4 mm	100000 Write/Erase Cycles		11 mm			TOP	67108864 bit	2.7 V		8/16				NOR TYPE	.0001 Amp	13 mm		70 ns	3	YES
S29GL064S80DHV020	Infineon Technologies	FLASH	INDUSTRIAL	64	LBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	64K	80 mA	4194304 words	3	YES		16	GRID ARRAY, LOW PROFILE	BGA64,8X8,40	8		20	1 mm	105 Cel	3-STATE	4MX16	4M	-40 Cel	128			YES	BOTTOM	S-PBGA-B64	3	3.6 V	1.4 mm	100000 Write/Erase Cycles		9 mm				67108864 bit	2.7 V		8/16				NOR TYPE	.0001 Amp	9 mm		80 ns	3	YES
S29GL128N90FFIR10	Infineon Technologies	FLASH	INDUSTRIAL	64	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	128K	90 mA	8388608 words	3.3	YES	3.3	16	GRID ARRAY, LOW PROFILE	BGA64,8X8,40	8	Flash Memories		1 mm	85 Cel		8MX16	8M	-40 Cel	128	YES	TIN SILVER COPPER	YES	BOTTOM	R-PBGA-B64	3	3.6 V	1.4 mm			11 mm	Not Qualified			134217728 bit	3 V		8/16	e1	40	260	NOR TYPE	.000005 Amp	13 mm	YES	90 ns	3	YES
S29GL128S11DHIV20	Infineon Technologies	FLASH	INDUSTRIAL	64	LBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	64K	80 mA	16777216 words	3	YES	3/3.3	8	GRID ARRAY, LOW PROFILE	BGA64,8X8,40		Flash Memories		1 mm	85 Cel		16MX8	16M	-40 Cel	128	YES	TIN SILVER COPPER	YES	BOTTOM	S-PBGA-B64	3	3.6 V	1.4 mm			9 mm	Not Qualified			134217728 bit	2.7 V		16	e1	30	260	NOR TYPE	.0001 Amp	9 mm	YES	110 ns	2.7	YES
S29GL512P10FFCR10	Cypress Semiconductor	FLASH	OTHER	64	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	128K	110 mA	536870912 words	3.3	YES	3.3	1	GRID ARRAY, LOW PROFILE	BGA64,8X8,40	8	Flash Memories		1 mm	85 Cel		512MX1	512M	0 Cel	512	YES	TIN SILVER COPPER	YES	BOTTOM	R-PBGA-B64	3	3.6 V	1.4 mm			11 mm	Not Qualified			536870912 bit	3 V		8/16	e1	30	260	NOR TYPE	.000005 Amp	13 mm	YES	100 ns	3	YES
S29GL512P11FAI022	Cypress Semiconductor	FLASH	INDUSTRIAL	64	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	128K	110 mA	536870912 words	3	YES	3/3.3	1	GRID ARRAY, LOW PROFILE	BGA64,8X8,40	8	Flash Memories		1 mm	85 Cel		512MX1	512M	-40 Cel	512	YES	TIN LEAD	YES	BOTTOM	R-PBGA-B64	3	3.6 V	1.4 mm			11 mm	Not Qualified			536870912 bit	2.7 V		8/16	e0			NOR TYPE	.000005 Amp	13 mm	YES	110 ns	3	YES
S29GL512S10DHA020	Infineon Technologies	FLASH		64	LBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100; TS 16949	BALL	PARALLEL	ASYNCHRONOUS	128K	100 mA	67108864 words	3	YES		8	GRID ARRAY, LOW PROFILE	BGA64,8X8,40	1		2	1 mm	85 Cel	3-STATE	64MX8	64M	-40 Cel	512	YES	TIN SILVER COPPER	YES	BOTTOM	S-PBGA-B64	3	3.6 V	1.4 mm	100000 Write/Erase Cycles		9 mm			BOTTOM/TOP	536870912 bit	2.7 V	20 YEARS DATA RETENTION; 10000 ERASE/PROGRAM CYCLES	32	e1	30	260	NAND TYPE	.0001 Amp	9 mm	YES	100 ns	3	YES
S29GL512S10DHI023	Infineon Technologies	FLASH		64	LBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	128K	100 mA	67108864 words	3	YES		8	GRID ARRAY, LOW PROFILE	BGA64,8X8,40	1		2	1 mm	85 Cel	3-STATE	64MX8	64M	-40 Cel	512	YES	TIN SILVER COPPER	YES	BOTTOM	S-PBGA-B64	3	3.6 V	1.4 mm	100000 Write/Erase Cycles		9 mm			BOTTOM/TOP	536870912 bit	2.7 V	20 YEARS DATA RETENTION; 10000 ERASE/PROGRAM CYCLES	32	e1	30	260	NAND TYPE	.0001 Amp	9 mm	YES	100 ns	3	YES
S29GL512T10FHI020	Infineon Technologies	FLASH	INDUSTRIAL	64	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS			33554432 words	3			16	GRID ARRAY, LOW PROFILE		8			1 mm	85 Cel		32MX16	32M	-40 Cel			TIN SILVER COPPER		BOTTOM	R-PBGA-B64	3	3.6 V	1.4 mm			11 mm				536870912 bit	2.7 V			e1	30	260			13 mm		100 ns	2.7
S29GL512T11DHB013	Infineon Technologies	FLASH	INDUSTRIAL	64	LBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	PARALLEL	ASYNCHRONOUS			33554432 words	3			16	GRID ARRAY, LOW PROFILE		8			1 mm	105 Cel		32MX16	32M	-40 Cel					BOTTOM	S-PBGA-B64	3	3.6 V	1.4 mm			9 mm				536870912 bit	2.7 V	CAN ALSO BE ORGANISED AS 512MX1							9 mm		110 ns	2.7
S29GL512T11FHIV10	Infineon Technologies	FLASH	INDUSTRIAL	64	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS			33554432 words	3			16	GRID ARRAY, LOW PROFILE		8			1 mm	85 Cel		32MX16	32M	-40 Cel			TIN SILVER COPPER		BOTTOM	R-PBGA-B64	3	3.6 V	1.4 mm			11 mm				536870912 bit	2.7 V			e1	30	260			13 mm		110 ns	2.7
S70GL02GS12FHIV10	Infineon Technologies	FLASH	INDUSTRIAL	64	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	128K	160 mA	134217728 words	3	YES	3/3.3	16	GRID ARRAY, LOW PROFILE	BGA64,8X8,40	8	Flash Memories		1 mm	85 Cel		128MX16	128M	-40 Cel	2K	YES		YES	BOTTOM	R-PBGA-B64	3	3.6 V	1.4 mm			11 mm	Not Qualified		BOTTOM/TOP	2147483648 bit	2.7 V		16/32				NOR TYPE	.0002 Amp	13 mm	YES	120 ns	3	YES
S70GL02GT12FHBV23	Infineon Technologies	FLASH	INDUSTRIAL	64	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	PARALLEL	ASYNCHRONOUS	128K	160 mA	134217728 words	3	NO		16	GRID ARRAY, LOW PROFILE	BGA64,8X8,40	8		0.2	1 mm	105 Cel	3-STATE	128MX16	128M	-40 Cel	2K	NO		YES	BOTTOM	R-PBGA-B64	3	3.6 V	1.4 mm	100000 Write/Erase Cycles		11 mm				2147483648 bit	2.7 V		16/32				NOR TYPE	.0004 Amp	13 mm	Y	120 ns	3	YES
M58BW016BT100ZA3F	STMicroelectronics	FLASH	AUTOMOTIVE	80	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	2K,16K	30 mA	524288 words	3	NO	2.5/3.3,3/3.3	32	GRID ARRAY, LOW PROFILE	BGA80,8X10,40		Flash Memories		1 mm	125 Cel		512KX32	512K	-40 Cel	8,31	YES	Tin/Silver/Copper (Sn95.5Ag4.0Cu0.5)		BOTTOM	R-PBGA-B80		3.6 V	1.7 mm			10 mm	Not Qualified		TOP	16777216 bit	2.7 V	SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE; TOP BOOT BLOCK		e1			NOR TYPE	.000005 Amp	12 mm	YES	100 ns	3	NO
M58BW016BTXXZA3	STMicroelectronics	FLASH	AUTOMOTIVE	80	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS			524288 words	3			32	GRID ARRAY, LOW PROFILE					1 mm	125 Cel		512KX32	512K	-40 Cel					BOTTOM	R-PBGA-B80		3.6 V	1.7 mm			10 mm	Not Qualified		TOP	16777216 bit	2.7 V	TOP BOOT BLOCK					NOR TYPE		12 mm		80 ns	3
M58BW016DB80ZA3	STMicroelectronics	FLASH	AUTOMOTIVE	80	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	2K,16K	30 mA	524288 words	3	NO	2.5/3.3,3/3.3	32	GRID ARRAY, LOW PROFILE	BGA80,8X10,40		Flash Memories		1 mm	125 Cel		512KX32	512K	-40 Cel	8,31	YES	Tin/Silver/Copper (Sn95.5Ag4.0Cu0.5)		BOTTOM	R-PBGA-B80		3.6 V	1.7 mm			10 mm	Not Qualified		BOTTOM	16777216 bit	2.7 V	BOTTOM BOOT BLOCK		e1			NOR TYPE	.000005 Amp	12 mm	YES	80 ns	3	NO
M58BW016FB7ZA3T	STMicroelectronics	FLASH	AUTOMOTIVE	80	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	2K,16K	40 mA	524288 words	3	NO	2.5/3.3,3/3.3	32	GRID ARRAY, LOW PROFILE	BGA80,8X10,40		Flash Memories		1 mm	125 Cel		512KX32	512K	-40 Cel	8,31	YES			BOTTOM	R-PBGA-B80	1	3.6 V	1.6 mm			10 mm	Not Qualified		BOTTOM	16777216 bit	2.7 V	SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE; BOTTOM BOOT BLOCK					NOR TYPE	.000005 Amp	12 mm	YES	70 ns	3	NO
M58BW016BB100ZA6FT	STMicroelectronics	FLASH	INDUSTRIAL	80	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	2K,16K	30 mA	524288 words	3	NO	2.5/3.3,3/3.3	32	GRID ARRAY, LOW PROFILE	BGA80,8X10,40		Flash Memories		1 mm	85 Cel		512KX32	512K	-40 Cel	8,31	YES	Tin/Silver/Copper (Sn95.5Ag4.0Cu0.5)		BOTTOM	R-PBGA-B80		3.6 V	1.7 mm			10 mm	Not Qualified		BOTTOM	16777216 bit	2.7 V	SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE; BOTTOM BOOT BLOCK		e1			NOR TYPE	.000005 Amp	12 mm	YES	100 ns	3	NO

Flash Memory

Flash memory is a type of non-volatile computer memory that is commonly used in digital devices such as USB drives, solid-state drives, and digital cameras. It is a type of EEPROM (Electrically Erasable Programmable Read-Only Memory) that allows data to be erased and reprogrammed in blocks instead of one byte at a time. Flash memory uses a floating gate transistor to store data, which allows it to retain information even when the power is turned off.

Flash memory is widely used in digital devices because of its high capacity, small size, and fast access times. It is also more durable than other types of memory, such as hard disk drives, because it has no moving parts. This makes it ideal for use in portable devices that may be subject to physical shock or vibration.

There are two types of flash memory: NOR flash and NAND flash. NOR flash is faster than NAND flash, but it has lower density and higher cost per bit. NOR flash is typically used for code storage, such as firmware or boot code, because it provides faster access times. NAND flash has higher density and lower cost per bit, which makes it ideal for data storage applications.

Flash memory has a limited lifespan, as it can only be erased and reprogrammed a limited number of times. This is because the process of erasing and reprogramming the memory causes wear and tear on the floating gate transistor. However, modern flash memory devices have a sophisticated wear-leveling algorithm that distributes writes evenly across the memory, which extends the lifespan of the device.