LFBGA Flash Memory 692

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Screening Level	Terminal Form	Parallel or Serial	Operating Mode	Sector Size (Words)	Maximum Supply Current	No. of Words	Nominal Supply Voltage / Vsup (V)	Toggle Bit	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Alternate Memory Width	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	No. of Sectors/Size	Command User Interface	Terminal Finish	Ready or Busy	Terminal Position	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Endurance	Maximum Clock Frequency (fCLK)	Width	Qualification	Boot Block	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	Page Size (words)	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Type	Maximum Standby Current	Length	Common Flash Interface	Maximum Access Time	Programming Voltage (V)	Data Polling
MX29LV640EBXEI-70G	Macronix	FLASH	INDUSTRIAL	48	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS			4194304 words	3			16	GRID ARRAY, LOW PROFILE, FINE PITCH		8		.8 mm	85 Cel		4MX16	4M	-40 Cel					BOTTOM	R-PBGA-B48		3.6 V	1.3 mm			6 mm	Not Qualified	BOTTOM	67108864 bit	2.7 V	BOTTOM BOOT BLOCK			NOT SPECIFIED	NOT SPECIFIED			8 mm		70 ns	3
MX29LV320EBXEI-70G	Macronix	FLASH	INDUSTRIAL	48	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	8K,64K	30 mA	2097152 words	3	YES	3/3.3	16	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA48,6X8,32	8	Flash Memories	.8 mm	85 Cel		2MX16	2M	-40 Cel	8,63	YES	Tin/Silver/Copper (Sn/Ag/Cu)	YES	BOTTOM	R-PBGA-B48		3.6 V	1.3 mm			6 mm	Not Qualified	BOTTOM	33554432 bit	2.7 V	BOTTOM BOOT BLOCK		e1	10	260	NOR TYPE	.000015 Amp	8 mm	YES	70 ns	3	YES
RPSEMC16DA1	Panasonic	FLASH CARD	INDUSTRIAL	153	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL		ASYNCHRONOUS			17179869184 words				8	GRID ARRAY, LOW PROFILE, FINE PITCH				.5 mm	85 Cel		16GX8	16G	-40 Cel					BOTTOM	R-PBGA-B153	3	3.6 V	1.4 mm			11.5 mm			137438953472 bit	2.7 V						MLC NAND TYPE		13 mm			2.7
EPC16UI88AA	Intel	CONFIGURATION MEMORY	INDUSTRIAL	88	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS		90 mA	16777216 words	3.3		3.3	1	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA88,8X12,32		Flash Memories	.8 mm	85 Cel	3-STATE	16MX1	16M	-40 Cel					BOTTOM	R-PBGA-B88		3.6 V	1.4 mm	100000 Write/Erase Cycles	66.7 MHz	8 mm	Not Qualified		16777216 bit	3 V							.00015 Amp	11 mm
MX29LV800CBXEI-70G	Macronix	FLASH	INDUSTRIAL	48	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	30 mA	8388608 words	3	YES	3/3.3	16	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA48,6X8,32	8	Flash Memories	.8 mm	85 Cel		8MX16	8M	-40 Cel	1,2,1,15	YES	TIN SILVER COPPER	YES	BOTTOM	R-PBGA-B48		3.6 V	1.3 mm			6 mm	Not Qualified	BOTTOM	134217728 bit	2.7 V			e1			NOR TYPE	.000005 Amp	8 mm	YES	70 ns	3	YES
AT49BV8192A-11CI	Atmel	FLASH	INDUSTRIAL	48	LFBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	16K,8K,992K	50 mA	524288 words	3	YES	3/3.3	16	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA48,6X8,30	8	Flash Memories	.75 mm	85 Cel		512KX16	512K	-40 Cel	1,2,1	YES	TIN LEAD		BOTTOM	S-PBGA-B48		3.6 V	1.25 mm			7 mm	Not Qualified	BOTTOM	8388608 bit	2.7 V	HARDWARE DATA PROTECTION		e0			NOR TYPE	.00005 Amp	7 mm		110 ns	3	YES
MTFC16GJGEF-AITZ	Micron Technology	FLASH CARD	INDUSTRIAL	169	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS			17179869184 words				8	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA169,14X14,20			.5 mm	85 Cel		16GX8	16G	-40 Cel					BOTTOM	R-PBGA-B169		3.6 V	1.364 mm		52 MHz	14 mm			137438953472 bit	2.7 V				NOT SPECIFIED	NOT SPECIFIED	NAND TYPE		18 mm
M29W400B-120ZA1	STMicroelectronics	FLASH	COMMERCIAL	48	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	20 mA	524288 words		YES	3/3.3	8	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA48,6X8,32	8	Flash Memories	.8 mm	70 Cel		512KX8	512K	0 Cel	1,2,1,7	YES	Tin/Silver/Copper (Sn95.5Ag4.0Cu0.5)	YES	BOTTOM	R-PBGA-B48		3.6 V	1.35 mm	100000 Write/Erase Cycles		6 mm	Not Qualified	BOTTOM	4194304 bit	2.7 V	CONFIGURABLE AS 256K X 16		e1			NOR TYPE	.00005 Amp	9 mm		120 ns	2.7	YES
M29W400B-150ZA1TR	STMicroelectronics	FLASH	COMMERCIAL	48	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	20 mA	524288 words		YES	3/3.3	8	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA48,6X8,32	8	Flash Memories	.8 mm	70 Cel		512KX8	512K	0 Cel	1,2,1,7	YES	Tin/Silver/Copper (Sn95.5Ag4.0Cu0.5)	YES	BOTTOM	R-PBGA-B48		3.6 V	1.35 mm	100000 Write/Erase Cycles		6 mm	Not Qualified	BOTTOM	4194304 bit	2.7 V	CONFIGURABLE AS 256K X 16		e1			NOR TYPE	.00005 Amp	9 mm		150 ns	2.7	YES
M29W017D90ZA1	STMicroelectronics	FLASH	COMMERCIAL	48	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS			2097152 words	3			8	GRID ARRAY, LOW PROFILE, FINE PITCH				.8 mm	70 Cel		2MX8	2M	0 Cel					BOTTOM	R-PBGA-B48		3.6 V	1.35 mm			8 mm	Not Qualified		16777216 bit	2.7 V						NOR TYPE		9 mm		90 ns	3
M29W017D70ZA6	STMicroelectronics	FLASH	INDUSTRIAL	48	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	64K	20 mA	2097152 words	3.3	YES	3.3	8	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA48,6X8,32		Flash Memories	.8 mm	85 Cel		2MX8	2M	-40 Cel	32	YES	TIN LEAD	YES	BOTTOM	R-PBGA-B48		3.6 V	1.35 mm			8 mm	Not Qualified		16777216 bit	3 V			e0			NOR TYPE	.0001 Amp	9 mm	YES	70 ns	3	YES
M29W400T-120ZA1	STMicroelectronics	FLASH	COMMERCIAL	48	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	20 mA	524288 words		YES	3/3.3	8	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA48,6X8,32	8	Flash Memories	.8 mm	70 Cel		512KX8	512K	0 Cel	1,2,1,7	YES	Tin/Silver/Copper (Sn95.5Ag4.0Cu0.5)	YES	BOTTOM	R-PBGA-B48		3.6 V	1.35 mm	100000 Write/Erase Cycles		6 mm	Not Qualified	TOP	4194304 bit	2.7 V	CONFIGURABLE AS 256K X 16		e1			NOR TYPE	.00005 Amp	9 mm		120 ns	2.7	YES
M30LW128D110ZE6F	STMicroelectronics	FLASH MODULE	INDUSTRIAL	88	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS		30 mA	8388608 words	3	NO	3/3.3	16	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA88,8X12,32	8	Flash Memories	.8 mm	85 Cel		8MX16	8M	-40 Cel		YES	TIN SILVER COPPER		BOTTOM	R-PBGA-B88		3.6 V	1.4 mm			8 mm	Not Qualified		134217728 bit	2.7 V		4	e1			NOR TYPE	.00008 Amp	10 mm	YES	110 ns	3.3	NO
M59DR032EB10ZB6	STMicroelectronics	FLASH	INDUSTRIAL	48	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	4K,32K	26 mA	2097152 words	1.8	YES	1.8/2	16	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA48,6X8,30		Flash Memories	.75 mm	85 Cel		2MX16	2M	-40 Cel	8,63	YES	Tin/Lead (Sn63Pb37)		BOTTOM	R-PBGA-B48		2.2 V	1.35 mm			7 mm	Not Qualified	BOTTOM	33554432 bit	1.65 V		4	e0			NOR TYPE	.00001 Amp	12 mm	YES	100 ns	1.8	YES
M59DR032EB85ZB6T	STMicroelectronics	FLASH	INDUSTRIAL	48	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	4K,32K	26 mA	2097152 words	2	YES	2	16	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA48,6X8,30		Flash Memories	.75 mm	85 Cel		2MX16	2M	-40 Cel	8,63	YES	Tin/Lead (Sn63Pb37)		BOTTOM	R-PBGA-B48		2.2 V	1.35 mm			7 mm	Not Qualified	BOTTOM	33554432 bit	1.8 V		4	e0			NOR TYPE	.000005 Amp	12 mm	YES	85 ns	1.8	YES
M29W160BT70ZA1T	STMicroelectronics	FLASH	COMMERCIAL	48	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	20 mA	1048576 words	3.3	YES	3.3	16	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA48,6X8,32	8	Flash Memories	.8 mm	70 Cel		1MX16	1M	0 Cel	1,2,1,31	YES	TIN LEAD	YES	BOTTOM	R-PBGA-B48		3.6 V	1.35 mm			8 mm	Not Qualified	TOP	16777216 bit	2.7 V	TOP BOOT BLOCK		e0			NOR TYPE	.0001 Amp	9 mm		70 ns	2.7	YES
M29W400T-120ZA5TR	STMicroelectronics	FLASH	OTHER	48	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	20 mA	524288 words		YES	3/3.3	8	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA48,6X8,32	8	Flash Memories	.8 mm	85 Cel		512KX8	512K	-20 Cel	1,2,1,7	YES	TIN SILVER COPPER	YES	BOTTOM	R-PBGA-B48		3.6 V	1.35 mm	100000 Write/Erase Cycles		6 mm	Not Qualified	TOP	4194304 bit	2.7 V	CONFG AS 256K X 16; TOP BOOT BLOCK		e1			NOR TYPE	.00005 Amp	9 mm		120 ns	3	YES
M59DR032EA85ZB1T	STMicroelectronics	FLASH	COMMERCIAL	48	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS			2097152 words	2			16	GRID ARRAY, LOW PROFILE, FINE PITCH				.75 mm	70 Cel		2MX16	2M	0 Cel			TIN LEAD		BOTTOM	R-PBGA-B48		2.2 V	1.35 mm			7 mm	Not Qualified	TOP	33554432 bit	1.8 V			e0			NOR TYPE		12 mm		85 ns	1.8
M59DR008F120ZB6T	STMicroelectronics	FLASH	INDUSTRIAL	48	LFBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	4K,32K	40 mA	524288 words	1.8	YES	1.8/2	16	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA48,6X8,30		Flash Memories	.75 mm	85 Cel		512KX16	512K	-40 Cel	8,15	YES	TIN SILVER COPPER		BOTTOM	S-PBGA-B48		2.2 V	1.35 mm			7 mm	Not Qualified	BOTTOM	8388608 bit	1.65 V		4	e1			NOR TYPE	.000005 Amp	7 mm	YES	120 ns	1.8	YES
M30L0T8000B0ZAQE	STMicroelectronics	FLASH	OTHER	88	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	16K,64K	53 mA	16777216 words	1.8	NO	1.8	16	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA88,8X12,32		Flash Memories	.8 mm	85 Cel		16MX16	16M	-25 Cel	4,255	YES	TIN SILVER COPPER		BOTTOM	R-PBGA-B88		2 V	1.4 mm			8 mm	Not Qualified	TOP	268435456 bit	1.7 V	100,000 PROGRAM/ERASE CYCLES; SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE	8	e1			NOR TYPE	.00011 Amp	10 mm	YES	85 ns	1.8	NO
M29W400T-100ZA6	STMicroelectronics	FLASH	INDUSTRIAL	48	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	20 mA	524288 words		YES	3/3.3	8	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA48,6X8,32	8	Flash Memories	.8 mm	85 Cel		512KX8	512K	-40 Cel	1,2,1,7	YES	TIN SILVER COPPER	YES	BOTTOM	R-PBGA-B48		3.6 V	1.35 mm	100000 Write/Erase Cycles		6 mm	Not Qualified	TOP	4194304 bit	2.7 V	CONFG AS 256K X 16; TOP BOOT BLOCK		e1			NOR TYPE	.00005 Amp	9 mm		100 ns	2.7	YES
M59DR032EB85ZB1T	STMicroelectronics	FLASH	COMMERCIAL	48	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS			2097152 words	2			16	GRID ARRAY, LOW PROFILE, FINE PITCH				.75 mm	70 Cel		2MX16	2M	0 Cel					BOTTOM	R-PBGA-B48		2.2 V	1.35 mm			7 mm	Not Qualified	BOTTOM	33554432 bit	1.8 V						NOR TYPE		12 mm		85 ns	1.8
M59DR016D100ZB6	STMicroelectronics	FLASH	INDUSTRIAL	48	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	4K,32K	40 mA	1048576 words	1.8	YES	1.8/2	16	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA48,6X8,30		Flash Memories	.75 mm	85 Cel		1MX16	1M	-40 Cel	8,31	YES	Tin/Silver/Copper (Sn95.5Ag4.0Cu0.5)		BOTTOM	R-PBGA-B48		2.2 V	1.35 mm			7 mm	Not Qualified	BOTTOM	16777216 bit	1.65 V		4	e1			NOR TYPE	.000005 Amp	12 mm	YES	100 ns	1.8	YES
M29W400T-120ZA6	STMicroelectronics	FLASH	INDUSTRIAL	48	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	20 mA	524288 words		YES	3/3.3	8	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA48,6X8,32	8	Flash Memories	.8 mm	85 Cel		512KX8	512K	-40 Cel	1,2,1,7	YES	TIN SILVER COPPER	YES	BOTTOM	R-PBGA-B48		3.6 V	1.35 mm	100000 Write/Erase Cycles		6 mm	Not Qualified	TOP	4194304 bit	2.7 V	CONFG AS 256K X 16; TOP BOOT BLOCK		e1			NOR TYPE	.00005 Amp	9 mm		120 ns	2.7	YES
M30LW128D110ZE1T	STMicroelectronics	FLASH MODULE	COMMERCIAL	88	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS		30 mA	8388608 words	3	NO	3/3.3	16	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA88,8X12,32	8	Flash Memories	.8 mm	70 Cel		8MX16	8M	0 Cel		YES	TIN LEAD		BOTTOM	R-PBGA-B88		3.6 V	1.4 mm			8 mm	Not Qualified		134217728 bit	2.7 V		4	e0			NOR TYPE	.00008 Amp	10 mm	YES	110 ns	3.3	NO
M29W160BT120ZA1T	STMicroelectronics	FLASH	COMMERCIAL	48	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	20 mA	1048576 words	3.3	YES	3/3.3	16	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA48,6X8,32	8	Flash Memories	.8 mm	70 Cel		1MX16	1M	0 Cel	1,2,1,31	YES	TIN LEAD	YES	BOTTOM	R-PBGA-B48		3.6 V	1.35 mm			8 mm	Not Qualified	TOP	16777216 bit	2.7 V	TOP BOOT BLOCK		e0			NOR TYPE	.0001 Amp	9 mm		120 ns	2.7	YES
M29W400T-120ZA6TR	STMicroelectronics	FLASH	INDUSTRIAL	48	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	20 mA	524288 words		YES	3/3.3	8	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA48,6X8,32	8	Flash Memories	.8 mm	85 Cel		512KX8	512K	-40 Cel	1,2,1,7	YES	TIN SILVER COPPER	YES	BOTTOM	R-PBGA-B48		3.6 V	1.35 mm	100000 Write/Erase Cycles		6 mm	Not Qualified	TOP	4194304 bit	2.7 V	CONFG AS 256K X 16; TOP BOOT BLOCK		e1			NOR TYPE	.00005 Amp	9 mm		120 ns	3	YES
M59DR008F120ZB1T	STMicroelectronics	FLASH	COMMERCIAL	48	LFBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	4K,32K	40 mA	524288 words	1.8	YES	1.8/2	16	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA48,6X8,30		Flash Memories	.75 mm	70 Cel		512KX16	512K	0 Cel	8,15	YES	Tin/Silver/Copper (Sn95.5Ag4.0Cu0.5)		BOTTOM	S-PBGA-B48		2.2 V	1.35 mm			7 mm	Not Qualified	BOTTOM	8388608 bit	1.65 V		4	e1			NOR TYPE	.000005 Amp	7 mm	YES	120 ns	1.8	YES
M59DR032EA85ZB6T	STMicroelectronics	FLASH	INDUSTRIAL	48	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	4K,32K	26 mA	2097152 words	2	YES	2	16	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA48,6X8,30		Flash Memories	.75 mm	85 Cel		2MX16	2M	-40 Cel	8,63	YES	TIN LEAD		BOTTOM	R-PBGA-B48		2.2 V	1.35 mm			7 mm	Not Qualified	TOP	33554432 bit	1.8 V		4	e0			NOR TYPE	.000005 Amp	12 mm	YES	85 ns	1.8	YES
M30W0R6500T0ZAQT	STMicroelectronics	FLASH MODULE	INDUSTRIAL	88	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS			6291456 words	1.8			16	GRID ARRAY, LOW PROFILE, FINE PITCH				.8 mm	85 Cel		6MX16	6M	-40 Cel					BOTTOM	R-PBGA-B88		2.2 V	1.4 mm			8 mm	Not Qualified	TOP	100663296 bit	1.7 V	SYNCHRONOUS BURST MODE OPERATION POSSIBLE					NOR TYPE		10 mm			3.3
M29W400B-120ZA5	STMicroelectronics	FLASH	OTHER	48	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	20 mA	524288 words		YES	3/3.3	8	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA48,6X8,32	8	Flash Memories	.8 mm	85 Cel		512KX8	512K	-20 Cel	1,2,1,7	YES	TIN SILVER COPPER	YES	BOTTOM	R-PBGA-B48		3.6 V	1.35 mm	100000 Write/Erase Cycles		6 mm	Not Qualified	BOTTOM	4194304 bit	2.7 V	CONFG AS 256K X 16; BOTTOM BOOT BLOCK		e1			NOR TYPE	.00005 Amp	9 mm		120 ns	2.7	YES
M59DR016D120ZB1	STMicroelectronics	FLASH	COMMERCIAL	48	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	4K,32K	40 mA	1048576 words	1.8	YES	1.8/2	16	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA48,6X8,30		Flash Memories	.75 mm	70 Cel		1MX16	1M	0 Cel	8,31	YES	Tin/Silver/Copper (Sn95.5Ag4.0Cu0.5)		BOTTOM	R-PBGA-B48		2.2 V	1.35 mm			7 mm	Not Qualified	BOTTOM	16777216 bit	1.65 V		4	e1			NOR TYPE	.000005 Amp	12 mm	YES	120 ns	1.8	YES
M59DR032EB85ZB6	STMicroelectronics	FLASH	INDUSTRIAL	48	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	4K,32K	26 mA	2097152 words	2	YES	2	16	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA48,6X8,30		Flash Memories	.75 mm	85 Cel		2MX16	2M	-40 Cel	8,63	YES	Tin/Lead (Sn63Pb37)		BOTTOM	R-PBGA-B48		2.2 V	1.35 mm			7 mm	Not Qualified	BOTTOM	33554432 bit	1.8 V		4	e0			NOR TYPE	.000005 Amp	12 mm	YES	85 ns	1.8	YES
M29W400B-90ZA1R	STMicroelectronics	FLASH	COMMERCIAL	48	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS			262144 words	3.3			16	GRID ARRAY, LOW PROFILE, FINE PITCH		8		.8 mm	70 Cel		256KX16	256K	0 Cel					BOTTOM	R-PBGA-B48		3.6 V	1.35 mm			6 mm	Not Qualified	BOTTOM	4194304 bit	3 V	BOTTOM BOOT BLOCK					NOR TYPE		9 mm		90 ns	3
M59DR016C100ZB1	STMicroelectronics	FLASH	COMMERCIAL	48	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	4K,32K	40 mA	1048576 words	1.8	YES	1.8/2	16	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA48,6X8,30		Flash Memories	.75 mm	70 Cel		1MX16	1M	0 Cel	8,31	YES	Tin/Silver/Copper (Sn95.5Ag4.0Cu0.5)		BOTTOM	R-PBGA-B48		2.2 V	1.35 mm			7 mm	Not Qualified	TOP	16777216 bit	1.65 V		4	e1			NOR TYPE	.000005 Amp	12 mm	YES	100 ns	1.8	YES
M29W017D90ZA6T	STMicroelectronics	FLASH	INDUSTRIAL	48	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	64K	20 mA	2097152 words	3	YES	3/3.3	8	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA48,6X8,32		Flash Memories	.8 mm	85 Cel		2MX8	2M	-40 Cel	32	YES	TIN LEAD	YES	BOTTOM	R-PBGA-B48		3.6 V	1.35 mm			8 mm	Not Qualified		16777216 bit	2.7 V			e0			NOR TYPE	.0001 Amp	9 mm	YES	90 ns	3	YES
M29W400B-90ZA5TR	STMicroelectronics	FLASH	OTHER	48	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	20 mA	262144 words	3.3	YES	3/3.3	16	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA48,6X8,32	8	Flash Memories	.8 mm	85 Cel		256KX16	256K	-20 Cel	1,2,1,7	YES	TIN SILVER COPPER	YES	BOTTOM	R-PBGA-B48		3.6 V	1.35 mm	100000 Write/Erase Cycles		6 mm	Not Qualified	BOTTOM	4194304 bit	3 V	CONFG AS 256K X 16; BOTTOM BOOT BLOCK		e1			NOR TYPE	.00005 Amp	9 mm		90 ns	3	YES
M59DR032B100ZB1T	STMicroelectronics	FLASH	COMMERCIAL	48	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	4K,32K	40 mA	2097152 words	1.8	YES	1.8/2	16	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA48,6X8,30		Flash Memories	.75 mm	70 Cel		2MX16	2M	0 Cel	8,63	YES	Tin/Silver/Copper (Sn95.5Ag4.0Cu0.5)		BOTTOM	R-PBGA-B48		2.2 V	1.35 mm			7 mm	Not Qualified	BOTTOM	33554432 bit	1.65 V		4	e1			NOR TYPE	.00001 Amp	12 mm	YES	100 ns	1.8	YES
M59DR032EA85ZB6	STMicroelectronics	FLASH	INDUSTRIAL	48	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	4K,32K	26 mA	2097152 words	2	YES	2	16	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA48,6X8,30		Flash Memories	.75 mm	85 Cel		2MX16	2M	-40 Cel	8,63	YES	TIN LEAD		BOTTOM	R-PBGA-B48		2.2 V	1.35 mm			7 mm	Not Qualified	TOP	33554432 bit	1.8 V		4	e0			NOR TYPE	.000005 Amp	12 mm	YES	85 ns	1.8	YES
M59DR032EA10ZB1	STMicroelectronics	FLASH	COMMERCIAL	48	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	4K,32K	26 mA	2097152 words	1.8	YES	1.8/2	16	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA48,6X8,30		Flash Memories	.75 mm	70 Cel		2MX16	2M	0 Cel	8,63	YES	TIN SILVER COPPER		BOTTOM	R-PBGA-B48		2.2 V	1.35 mm			7 mm	Not Qualified	TOP	33554432 bit	1.65 V		4	e1			NOR TYPE	.00001 Amp	12 mm	YES	100 ns	1.8	YES
M29W160BB90ZA1	STMicroelectronics	FLASH	COMMERCIAL	48	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	20 mA	1048576 words	3.3	YES	3/3.3	16	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA48,6X8,32	8	Flash Memories	.8 mm	70 Cel		1MX16	1M	0 Cel	1,2,1,31	YES	TIN LEAD	YES	BOTTOM	R-PBGA-B48		3.6 V	1.35 mm			8 mm	Not Qualified	BOTTOM	16777216 bit	2.7 V	BOTTOM BOOT BLOCK		e0			NOR TYPE	.0001 Amp	9 mm		90 ns	2.7	YES
M59DR016D100ZB6T	STMicroelectronics	FLASH	INDUSTRIAL	48	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	4K,32K	40 mA	1048576 words	1.8	YES	1.8/2	16	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA48,6X8,30		Flash Memories	.75 mm	85 Cel		1MX16	1M	-40 Cel	8,31	YES	Tin/Silver/Copper (Sn95.5Ag4.0Cu0.5)		BOTTOM	R-PBGA-B48		2.2 V	1.35 mm			7 mm	Not Qualified	BOTTOM	16777216 bit	1.65 V		4	e1			NOR TYPE	.000005 Amp	12 mm	YES	100 ns	1.8	YES
M29W160BB120ZA6T	STMicroelectronics	FLASH	INDUSTRIAL	48	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	20 mA	1048576 words	3.3	YES	3/3.3	16	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA48,6X8,32	8	Flash Memories	.8 mm	85 Cel		1MX16	1M	-40 Cel	1,2,1,31	YES	TIN LEAD	YES	BOTTOM	R-PBGA-B48		3.6 V	1.35 mm			8 mm	Not Qualified	BOTTOM	16777216 bit	2.7 V	BOTTOM BOOT BLOCK		e0			NOR TYPE	.0001 Amp	9 mm		120 ns	2.7	YES
M59DR032EB10ZB1	STMicroelectronics	FLASH	COMMERCIAL	48	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	4K,32K	26 mA	2097152 words	1.8	YES	1.8/2	16	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA48,6X8,30		Flash Memories	.75 mm	70 Cel		2MX16	2M	0 Cel	8,63	YES	Tin/Silver/Copper (Sn95.5Ag4.0Cu0.5)		BOTTOM	R-PBGA-B48		2.2 V	1.35 mm			7 mm	Not Qualified	BOTTOM	33554432 bit	1.65 V		4	e1			NOR TYPE	.00001 Amp	12 mm	YES	100 ns	1.8	YES
M29W400T-150ZA1TR	STMicroelectronics	FLASH	COMMERCIAL	48	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	20 mA	524288 words		YES	3/3.3	8	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA48,6X8,32	8	Flash Memories	.8 mm	70 Cel		512KX8	512K	0 Cel	1,2,1,7	YES	Tin/Silver/Copper (Sn95.5Ag4.0Cu0.5)	YES	BOTTOM	R-PBGA-B48		3.6 V	1.35 mm	100000 Write/Erase Cycles		6 mm	Not Qualified	TOP	4194304 bit	2.7 V	CONFIGURABLE AS 256K X 16		e1			NOR TYPE	.00005 Amp	9 mm		150 ns	2.7	YES
M29W160BT120ZA6	STMicroelectronics	FLASH	INDUSTRIAL	48	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	20 mA	1048576 words	3.3	YES	3/3.3	16	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA48,6X8,32	8	Flash Memories	.8 mm	85 Cel		1MX16	1M	-40 Cel	1,2,1,31	YES	TIN LEAD	YES	BOTTOM	R-PBGA-B48		3.6 V	1.35 mm			8 mm	Not Qualified	TOP	16777216 bit	2.7 V	TOP BOOT BLOCK		e0			NOR TYPE	.0001 Amp	9 mm		120 ns	2.7	YES
M29W400T-90ZA1	STMicroelectronics	FLASH	COMMERCIAL	48	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	20 mA	262144 words	3.3	YES	3/3.3	16	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA48,6X8,32	8	Flash Memories	.8 mm	70 Cel		256KX16	256K	0 Cel	1,2,1,7	YES	TIN SILVER COPPER	YES	BOTTOM	R-PBGA-B48		3.6 V	1.35 mm	100000 Write/Erase Cycles		6 mm	Not Qualified	TOP	4194304 bit	3 V	CONFG AS 256K X 16; TOP BOOT BLOCK		e1			NOR TYPE	.00005 Amp	9 mm		90 ns	3	YES
M29W400B-90ZA1	STMicroelectronics	FLASH	COMMERCIAL	48	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	20 mA	262144 words	3.3	YES	3/3.3	16	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA48,6X8,32	8	Flash Memories	.8 mm	70 Cel		256KX16	256K	0 Cel	1,2,1,7	YES	TIN SILVER COPPER	YES	BOTTOM	R-PBGA-B48		3.6 V	1.35 mm	100000 Write/Erase Cycles		6 mm	Not Qualified	BOTTOM	4194304 bit	3 V	CONFG AS 256K X 16; BOTTOM BOOT BLOCK		e1			NOR TYPE	.00005 Amp	9 mm		90 ns	3	YES

Flash Memory

Flash memory is a type of non-volatile computer memory that is commonly used in digital devices such as USB drives, solid-state drives, and digital cameras. It is a type of EEPROM (Electrically Erasable Programmable Read-Only Memory) that allows data to be erased and reprogrammed in blocks instead of one byte at a time. Flash memory uses a floating gate transistor to store data, which allows it to retain information even when the power is turned off.

Flash memory is widely used in digital devices because of its high capacity, small size, and fast access times. It is also more durable than other types of memory, such as hard disk drives, because it has no moving parts. This makes it ideal for use in portable devices that may be subject to physical shock or vibration.

There are two types of flash memory: NOR flash and NAND flash. NOR flash is faster than NAND flash, but it has lower density and higher cost per bit. NOR flash is typically used for code storage, such as firmware or boot code, because it provides faster access times. NAND flash has higher density and lower cost per bit, which makes it ideal for data storage applications.

Flash memory has a limited lifespan, as it can only be erased and reprogrammed a limited number of times. This is because the process of erasing and reprogramming the memory causes wear and tear on the floating gate transistor. However, modern flash memory devices have a sophisticated wear-leveling algorithm that distributes writes evenly across the memory, which extends the lifespan of the device.