LFBGA Flash Memory 692

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Terminal Form	Parallel or Serial	Operating Mode	Sector Size (Words)	Maximum Supply Current	No. of Words	Nominal Supply Voltage / Vsup (V)	Toggle Bit	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Alternate Memory Width	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Organization	No. of Words Code	Minimum Operating Temperature	No. of Sectors/Size	Command User Interface	Terminal Finish	Ready or Busy	Terminal Position	JESD-30 Code	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Endurance	Width	Qualification	Boot Block	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	Page Size (words)	JESD-609 Code	Peak Reflow Temperature (C)	Type	Maximum Standby Current	Length	Common Flash Interface	Maximum Access Time	Programming Voltage (V)	Data Polling
M29W400B-100ZA1	STMicroelectronics	FLASH	COMMERCIAL	48	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	20 mA	524288 words		YES	3/3.3	8	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA48,6X8,32	8	Flash Memories	.8 mm	70 Cel	512KX8	512K	0 Cel	1,2,1,7	YES	Tin/Silver/Copper (Sn95.5Ag4.0Cu0.5)	YES	BOTTOM	R-PBGA-B48	3.6 V	1.35 mm	100000 Write/Erase Cycles	6 mm	Not Qualified	BOTTOM	4194304 bit	2.7 V	CONFIGURABLE AS 256K X 16		e1		NOR TYPE	.00005 Amp	9 mm		100 ns	2.7	YES
M29W400T-90ZA6R	STMicroelectronics	FLASH	INDUSTRIAL	48	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS			262144 words	3.3			16	GRID ARRAY, LOW PROFILE, FINE PITCH		8		.8 mm	85 Cel	256KX16	256K	-40 Cel					BOTTOM	R-PBGA-B48	3.6 V	1.35 mm		6 mm	Not Qualified	TOP	4194304 bit	3 V	TOP BOOT BLOCK				NOR TYPE		9 mm		90 ns	3
M29W400T-100ZA1TR	STMicroelectronics	FLASH	COMMERCIAL	48	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	20 mA	524288 words		YES	3/3.3	8	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA48,6X8,32	8	Flash Memories	.8 mm	70 Cel	512KX8	512K	0 Cel	1,2,1,7	YES	Tin/Silver/Copper (Sn95.5Ag4.0Cu0.5)	YES	BOTTOM	R-PBGA-B48	3.6 V	1.35 mm	100000 Write/Erase Cycles	6 mm	Not Qualified	TOP	4194304 bit	2.7 V	CONFIGURABLE AS 256K X 16		e1		NOR TYPE	.00005 Amp	9 mm		100 ns	2.7	YES
M29W400T-90ZA5R	STMicroelectronics	FLASH	OTHER	48	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS			262144 words	3.3			16	GRID ARRAY, LOW PROFILE, FINE PITCH		8		.8 mm	85 Cel	256KX16	256K	-20 Cel					BOTTOM	R-PBGA-B48	3.6 V	1.35 mm		6 mm	Not Qualified	TOP	4194304 bit	3 V	TOP BOOT BLOCK				NOR TYPE		9 mm		90 ns	3
M30W0R6500T0ZAQF	STMicroelectronics	FLASH MODULE	INDUSTRIAL	88	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS			6291456 words	1.8			16	GRID ARRAY, LOW PROFILE, FINE PITCH				.8 mm	85 Cel	6MX16	6M	-40 Cel			TIN SILVER COPPER		BOTTOM	R-PBGA-B88	2.2 V	1.4 mm		8 mm	Not Qualified	TOP	100663296 bit	1.7 V	SYNCHRONOUS BURST MODE OPERATION POSSIBLE		e1	260	NOR TYPE		10 mm			3.3
M30L0T8000B0ZAQF	STMicroelectronics	FLASH	OTHER	88	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	16K,64K	53 mA	16777216 words	1.8	NO	1.8	16	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA88,8X12,32		Flash Memories	.8 mm	85 Cel	16MX16	16M	-25 Cel	4,255	YES	TIN SILVER COPPER		BOTTOM	R-PBGA-B88	2 V	1.4 mm		8 mm	Not Qualified	TOP	268435456 bit	1.7 V	100,000 PROGRAM/ERASE CYCLES; SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE	8	e1		NOR TYPE	.00011 Amp	10 mm	YES	85 ns	1.8	NO
M59DR032EA85ZB1	STMicroelectronics	FLASH	COMMERCIAL	48	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS			2097152 words	2			16	GRID ARRAY, LOW PROFILE, FINE PITCH				.75 mm	70 Cel	2MX16	2M	0 Cel			TIN LEAD		BOTTOM	R-PBGA-B48	2.2 V	1.35 mm		7 mm	Not Qualified	TOP	33554432 bit	1.8 V			e0		NOR TYPE		12 mm		85 ns	1.8
M59DR032A120ZB6	STMicroelectronics	FLASH	INDUSTRIAL	48	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	4K,32K	40 mA	2097152 words	1.8	YES	1.8/2	16	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA48,6X8,30		Flash Memories	.75 mm	85 Cel	2MX16	2M	-40 Cel	8,63	YES	Tin/Silver/Copper (Sn95.5Ag4.0Cu0.5)		BOTTOM	R-PBGA-B48	2.2 V	1.35 mm		7 mm	Not Qualified	TOP	33554432 bit	1.65 V		4	e1		NOR TYPE	.00001 Amp	12 mm	YES	120 ns	1.8	YES
M59DR032A100ZB1T	STMicroelectronics	FLASH	COMMERCIAL	48	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	4K,32K	40 mA	2097152 words	1.8	YES	1.8/2	16	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA48,6X8,30		Flash Memories	.75 mm	70 Cel	2MX16	2M	0 Cel	8,63	YES	Tin/Silver/Copper (Sn95.5Ag4.0Cu0.5)		BOTTOM	R-PBGA-B48	2.2 V	1.35 mm		7 mm	Not Qualified	TOP	33554432 bit	1.65 V		4	e1		NOR TYPE	.00001 Amp	12 mm	YES	100 ns	1.8	YES
M29W160BT70ZA1	STMicroelectronics	FLASH	COMMERCIAL	48	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	20 mA	2097152 words	3.3	YES	3.3	8	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA48,6X8,32	16	Flash Memories	.8 mm	70 Cel	2MX8	2M	0 Cel	1,2,1,31	YES	TIN LEAD	YES	BOTTOM	R-PBGA-B48	3.6 V	1.35 mm		8 mm	Not Qualified	TOP	16777216 bit	2.7 V	TOP BOOT BLOCK		e0		NOR TYPE	.0001 Amp	9 mm		70 ns	2.7	YES
M59DR032EA85ZB1F	STMicroelectronics	FLASH	COMMERCIAL	48	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS			2097152 words	2			16	GRID ARRAY, LOW PROFILE, FINE PITCH				.75 mm	70 Cel	2MX16	2M	0 Cel			TIN SILVER COPPER		BOTTOM	R-PBGA-B48	2.2 V	1.35 mm		7 mm	Not Qualified	TOP	33554432 bit	1.8 V			e1		NOR TYPE		12 mm		85 ns	1.8
M29W160BT90ZA1T	STMicroelectronics	FLASH	COMMERCIAL	48	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	20 mA	1048576 words	3.3	YES	3/3.3	16	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA48,6X8,32	8	Flash Memories	.8 mm	70 Cel	1MX16	1M	0 Cel	1,2,1,31	YES	TIN LEAD	YES	BOTTOM	R-PBGA-B48	3.6 V	1.35 mm		8 mm	Not Qualified	TOP	16777216 bit	2.7 V	TOP BOOT BLOCK		e0		NOR TYPE	.0001 Amp	9 mm		90 ns	2.7	YES
M59DR032EB12ZB1T	STMicroelectronics	FLASH	COMMERCIAL	48	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	4K,32K	26 mA	2097152 words	1.8	YES	1.8/2	16	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA48,6X8,30		Flash Memories	.75 mm	70 Cel	2MX16	2M	0 Cel	8,63	YES	Tin/Silver/Copper (Sn95.5Ag4.0Cu0.5)		BOTTOM	R-PBGA-B48	2.2 V	1.35 mm		7 mm	Not Qualified	BOTTOM	33554432 bit	1.65 V		4	e1		NOR TYPE	.00001 Amp	12 mm	YES	120 ns	1.8	YES
M59DR032EA85ZB6E	STMicroelectronics	FLASH	INDUSTRIAL	48	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS			2097152 words	2			16	GRID ARRAY, LOW PROFILE, FINE PITCH				.75 mm	85 Cel	2MX16	2M	-40 Cel			TIN SILVER COPPER		BOTTOM	R-PBGA-B48	2.2 V	1.35 mm		7 mm	Not Qualified	TOP	33554432 bit	1.8 V			e1		NOR TYPE		12 mm		85 ns	1.8
M59DR032EB10ZB1T	STMicroelectronics	FLASH	COMMERCIAL	48	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	4K,32K	26 mA	2097152 words	1.8	YES	1.8/2	16	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA48,6X8,30		Flash Memories	.75 mm	70 Cel	2MX16	2M	0 Cel	8,63	YES	Tin/Silver/Copper (Sn95.5Ag4.0Cu0.5)		BOTTOM	R-PBGA-B48	2.2 V	1.35 mm		7 mm	Not Qualified	BOTTOM	33554432 bit	1.65 V		4	e1		NOR TYPE	.00001 Amp	12 mm	YES	100 ns	1.8	YES
M29W160BB70ZA6T	STMicroelectronics	FLASH	INDUSTRIAL	48	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	20 mA	1048576 words	3.3	YES	3.3	16	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA48,6X8,32	8	Flash Memories	.8 mm	85 Cel	1MX16	1M	-40 Cel	1,2,1,31	YES	TIN LEAD	YES	BOTTOM	R-PBGA-B48	3.6 V	1.35 mm		8 mm	Not Qualified	BOTTOM	16777216 bit	2.7 V	BOTTOM BOOT BLOCK		e0		NOR TYPE	.0001 Amp	9 mm		70 ns	2.7	YES
M29W017D90ZA1T	STMicroelectronics	FLASH	COMMERCIAL	48	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS			2097152 words	3			8	GRID ARRAY, LOW PROFILE, FINE PITCH				.8 mm	70 Cel	2MX8	2M	0 Cel					BOTTOM	R-PBGA-B48	3.6 V	1.35 mm		8 mm	Not Qualified		16777216 bit	2.7 V					NOR TYPE		9 mm		90 ns	3
M59DR032EA12ZB6F	STMicroelectronics	FLASH	INDUSTRIAL	48	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS			2097152 words	1.8			16	GRID ARRAY, LOW PROFILE, FINE PITCH				.75 mm	85 Cel	2MX16	2M	-40 Cel			TIN SILVER COPPER		BOTTOM	R-PBGA-B48	2.2 V	1.35 mm		7 mm	Not Qualified	TOP	33554432 bit	1.65 V			e1		NOR TYPE		12 mm		120 ns	1.8
M59DR032EB12ZB6T	STMicroelectronics	FLASH	INDUSTRIAL	48	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	4K,32K	26 mA	2097152 words	1.8	YES	1.8/2	16	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA48,6X8,30		Flash Memories	.75 mm	85 Cel	2MX16	2M	-40 Cel	8,63	YES	Tin/Lead (Sn63Pb37)		BOTTOM	R-PBGA-B48	2.2 V	1.35 mm		7 mm	Not Qualified	BOTTOM	33554432 bit	1.65 V		4	e0		NOR TYPE	.00001 Amp	12 mm	YES	120 ns	1.8	YES
M59DR032EB12ZB6F	STMicroelectronics	FLASH	INDUSTRIAL	48	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS			2097152 words	1.8			16	GRID ARRAY, LOW PROFILE, FINE PITCH				.75 mm	85 Cel	2MX16	2M	-40 Cel			TIN SILVER COPPER		BOTTOM	R-PBGA-B48	2.2 V	1.35 mm		7 mm	Not Qualified	BOTTOM	33554432 bit	1.65 V			e1		NOR TYPE		12 mm		120 ns	1.8
M29W160BT120ZA1	STMicroelectronics	FLASH	COMMERCIAL	48	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	20 mA	1048576 words	3.3	YES	3/3.3	16	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA48,6X8,32	8	Flash Memories	.8 mm	70 Cel	1MX16	1M	0 Cel	1,2,1,31	YES	TIN LEAD	YES	BOTTOM	R-PBGA-B48	3.6 V	1.35 mm		8 mm	Not Qualified	TOP	16777216 bit	2.7 V	TOP BOOT BLOCK		e0		NOR TYPE	.0001 Amp	9 mm		120 ns	2.7	YES
M59DR016D120ZB6T	STMicroelectronics	FLASH	INDUSTRIAL	48	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	4K,32K	40 mA	1048576 words	1.8	YES	1.8/2	16	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA48,6X8,30		Flash Memories	.75 mm	85 Cel	1MX16	1M	-40 Cel	8,31	YES	Tin/Silver/Copper (Sn95.5Ag4.0Cu0.5)		BOTTOM	R-PBGA-B48	2.2 V	1.35 mm		7 mm	Not Qualified	BOTTOM	16777216 bit	1.65 V		4	e1		NOR TYPE	.000005 Amp	12 mm	YES	120 ns	1.8	YES
M29W400T-90ZA5	STMicroelectronics	FLASH	OTHER	48	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	20 mA	262144 words	3.3	YES	3/3.3	16	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA48,6X8,32	8	Flash Memories	.8 mm	85 Cel	256KX16	256K	-20 Cel	1,2,1,7	YES	TIN SILVER COPPER	YES	BOTTOM	R-PBGA-B48	3.6 V	1.35 mm	100000 Write/Erase Cycles	6 mm	Not Qualified	TOP	4194304 bit	3 V	CONFG AS 256K X 16; TOP BOOT BLOCK		e1		NOR TYPE	.00005 Amp	9 mm		90 ns	3	YES
M29W400T-120ZA5	STMicroelectronics	FLASH	OTHER	48	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	20 mA	524288 words		YES	3/3.3	8	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA48,6X8,32	8	Flash Memories	.8 mm	85 Cel	512KX8	512K	-20 Cel	1,2,1,7	YES	TIN SILVER COPPER	YES	BOTTOM	R-PBGA-B48	3.6 V	1.35 mm	100000 Write/Erase Cycles	6 mm	Not Qualified	TOP	4194304 bit	2.7 V	CONFG AS 256K X 16; TOP BOOT BLOCK		e1		NOR TYPE	.00005 Amp	9 mm		120 ns	2.7	YES
M59DR016C120ZB6	STMicroelectronics	FLASH	INDUSTRIAL	48	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	4K,32K	40 mA	1048576 words	1.8	YES	1.8/2	16	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA48,6X8,30		Flash Memories	.75 mm	85 Cel	1MX16	1M	-40 Cel	8,31	YES	Tin/Silver/Copper (Sn95.5Ag4.0Cu0.5)		BOTTOM	R-PBGA-B48	2.2 V	1.35 mm		7 mm	Not Qualified	TOP	16777216 bit	1.65 V		4	e1		NOR TYPE	.000005 Amp	12 mm	YES	120 ns	1.8	YES
M59DR032EA10ZB6E	STMicroelectronics	FLASH	INDUSTRIAL	48	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS			2097152 words	1.8			16	GRID ARRAY, LOW PROFILE, FINE PITCH				.75 mm	85 Cel	2MX16	2M	-40 Cel			TIN SILVER COPPER		BOTTOM	R-PBGA-B48	2.2 V	1.35 mm		7 mm	Not Qualified	TOP	33554432 bit	1.65 V			e1		NOR TYPE		12 mm		100 ns	1.8
M29W400T-100ZA5	STMicroelectronics	FLASH	OTHER	48	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	20 mA	524288 words		YES	3/3.3	8	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA48,6X8,32	8	Flash Memories	.8 mm	85 Cel	512KX8	512K	-20 Cel	1,2,1,7	YES	TIN SILVER COPPER	YES	BOTTOM	R-PBGA-B48	3.6 V	1.35 mm	100000 Write/Erase Cycles	6 mm	Not Qualified	TOP	4194304 bit	2.7 V	CONFG AS 256K X 16; TOP BOOT BLOCK		e1		NOR TYPE	.00005 Amp	9 mm		100 ns	2.7	YES
M59DR032EB10ZB6F	STMicroelectronics	FLASH	INDUSTRIAL	48	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS			2097152 words	1.8			16	GRID ARRAY, LOW PROFILE, FINE PITCH				.75 mm	85 Cel	2MX16	2M	-40 Cel			TIN SILVER COPPER		BOTTOM	R-PBGA-B48	2.2 V	1.35 mm		7 mm	Not Qualified	BOTTOM	33554432 bit	1.65 V			e1		NOR TYPE		12 mm		100 ns	1.8
M29W400B-120ZA5TR	STMicroelectronics	FLASH	OTHER	48	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	20 mA	524288 words		YES	3/3.3	8	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA48,6X8,32	8	Flash Memories	.8 mm	85 Cel	512KX8	512K	-20 Cel	1,2,1,7	YES	TIN SILVER COPPER	YES	BOTTOM	R-PBGA-B48	3.6 V	1.35 mm	100000 Write/Erase Cycles	6 mm	Not Qualified	BOTTOM	4194304 bit	2.7 V	CONFG AS 256K X 16; BOTTOM BOOT BLOCK		e1		NOR TYPE	.00005 Amp	9 mm		120 ns	3	YES
M29W400T-100ZA1	STMicroelectronics	FLASH	COMMERCIAL	48	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	20 mA	524288 words		YES	3/3.3	8	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA48,6X8,32	8	Flash Memories	.8 mm	70 Cel	512KX8	512K	0 Cel	1,2,1,7	YES	Tin/Silver/Copper (Sn95.5Ag4.0Cu0.5)	YES	BOTTOM	R-PBGA-B48	3.6 V	1.35 mm	100000 Write/Erase Cycles	6 mm	Not Qualified	TOP	4194304 bit	2.7 V	CONFIGURABLE AS 256K X 16		e1		NOR TYPE	.00005 Amp	9 mm		100 ns	2.7	YES
M29W400T-150ZA5TR	STMicroelectronics	FLASH	OTHER	48	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	20 mA	524288 words		YES	3/3.3	8	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA48,6X8,32	8	Flash Memories	.8 mm	85 Cel	512KX8	512K	-20 Cel	1,2,1,7	YES	TIN SILVER COPPER	YES	BOTTOM	R-PBGA-B48	3.6 V	1.35 mm	100000 Write/Erase Cycles	6 mm	Not Qualified	TOP	4194304 bit	2.7 V	CONFG AS 256K X 16; TOP BOOT BLOCK		e1		NOR TYPE	.00005 Amp	9 mm		150 ns	3	YES
M29W400B-90ZA5R	STMicroelectronics	FLASH	OTHER	48	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS			262144 words	3.3			16	GRID ARRAY, LOW PROFILE, FINE PITCH		8		.8 mm	85 Cel	256KX16	256K	-20 Cel					BOTTOM	R-PBGA-B48	3.6 V	1.35 mm		6 mm	Not Qualified	BOTTOM	4194304 bit	3 V	BOTTOM BOOT BLOCK				NOR TYPE		9 mm		90 ns	3
M29W400T-120ZA1TR	STMicroelectronics	FLASH	COMMERCIAL	48	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	20 mA	524288 words		YES	3/3.3	8	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA48,6X8,32	8	Flash Memories	.8 mm	70 Cel	512KX8	512K	0 Cel	1,2,1,7	YES	Tin/Silver/Copper (Sn95.5Ag4.0Cu0.5)	YES	BOTTOM	R-PBGA-B48	3.6 V	1.35 mm	100000 Write/Erase Cycles	6 mm	Not Qualified	TOP	4194304 bit	2.7 V	CONFIGURABLE AS 256K X 16		e1		NOR TYPE	.00005 Amp	9 mm		120 ns	2.7	YES
M59DR032A100ZB6T	STMicroelectronics	FLASH	INDUSTRIAL	48	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	4K,32K	40 mA	2097152 words	1.8	YES	1.8/2	16	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA48,6X8,30		Flash Memories	.75 mm	85 Cel	2MX16	2M	-40 Cel	8,63	YES	Tin/Silver/Copper (Sn95.5Ag4.0Cu0.5)		BOTTOM	R-PBGA-B48	2.2 V	1.35 mm		7 mm	Not Qualified	TOP	33554432 bit	1.65 V		4	e1		NOR TYPE	.00001 Amp	12 mm	YES	100 ns	1.8	YES
M59DR032EB10ZB1E	STMicroelectronics	FLASH	COMMERCIAL	48	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS			2097152 words	1.8			16	GRID ARRAY, LOW PROFILE, FINE PITCH				.75 mm	70 Cel	2MX16	2M	0 Cel			TIN SILVER COPPER		BOTTOM	R-PBGA-B48	2.2 V	1.35 mm		7 mm	Not Qualified	BOTTOM	33554432 bit	1.65 V			e1		NOR TYPE		12 mm		100 ns	1.8
M59DR032EB12ZB1E	STMicroelectronics	FLASH	COMMERCIAL	48	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS			2097152 words	1.8			16	GRID ARRAY, LOW PROFILE, FINE PITCH				.75 mm	70 Cel	2MX16	2M	0 Cel			TIN SILVER COPPER		BOTTOM	R-PBGA-B48	2.2 V	1.35 mm		7 mm	Not Qualified	BOTTOM	33554432 bit	1.65 V			e1		NOR TYPE		12 mm		120 ns	1.8
M29W400B-100ZA6	STMicroelectronics	FLASH	INDUSTRIAL	48	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	20 mA	524288 words		YES	3/3.3	8	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA48,6X8,32	8	Flash Memories	.8 mm	85 Cel	512KX8	512K	-40 Cel	1,2,1,7	YES	TIN SILVER COPPER	YES	BOTTOM	R-PBGA-B48	3.6 V	1.35 mm	100000 Write/Erase Cycles	6 mm	Not Qualified	BOTTOM	4194304 bit	2.7 V	CONFG AS 256K X 16; BOTTOM BOOT BLOCK		e1		NOR TYPE	.00005 Amp	9 mm		100 ns	2.7	YES
M59DR008F120ZB1	STMicroelectronics	FLASH	COMMERCIAL	48	LFBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	4K,32K	40 mA	524288 words	1.8	YES	1.8/2	16	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA48,6X8,30		Flash Memories	.75 mm	70 Cel	512KX16	512K	0 Cel	8,15	YES	Tin/Silver/Copper (Sn95.5Ag4.0Cu0.5)		BOTTOM	S-PBGA-B48	2.2 V	1.35 mm		7 mm	Not Qualified	BOTTOM	8388608 bit	1.65 V		4	e1		NOR TYPE	.000005 Amp	7 mm	YES	120 ns	1.8	YES
M59DR032B100ZB6	STMicroelectronics	FLASH	INDUSTRIAL	48	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	4K,32K	40 mA	2097152 words	1.8	YES	1.8/2	16	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA48,6X8,30		Flash Memories	.75 mm	85 Cel	2MX16	2M	-40 Cel	8,63	YES	Tin/Silver/Copper (Sn95.5Ag4.0Cu0.5)		BOTTOM	R-PBGA-B48	2.2 V	1.35 mm		7 mm	Not Qualified	BOTTOM	33554432 bit	1.65 V		4	e1		NOR TYPE	.00001 Amp	12 mm	YES	100 ns	1.8	YES
M59DR032A100ZB6	STMicroelectronics	FLASH	INDUSTRIAL	48	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	4K,32K	40 mA	2097152 words	1.8	YES	1.8/2	16	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA48,6X8,30		Flash Memories	.75 mm	85 Cel	2MX16	2M	-40 Cel	8,63	YES	Tin/Silver/Copper (Sn95.5Ag4.0Cu0.5)		BOTTOM	R-PBGA-B48	2.2 V	1.35 mm		7 mm	Not Qualified	TOP	33554432 bit	1.65 V		4	e1		NOR TYPE	.00001 Amp	12 mm	YES	100 ns	1.8	YES
M59DR032EB85ZB1F	STMicroelectronics	FLASH	COMMERCIAL	48	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS			2097152 words	2			16	GRID ARRAY, LOW PROFILE, FINE PITCH				.75 mm	70 Cel	2MX16	2M	0 Cel			TIN SILVER COPPER		BOTTOM	R-PBGA-B48	2.2 V	1.35 mm		7 mm	Not Qualified	BOTTOM	33554432 bit	1.8 V			e1		NOR TYPE		12 mm		85 ns	1.8
M29W400T-150ZA1	STMicroelectronics	FLASH	COMMERCIAL	48	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	20 mA	524288 words		YES	3/3.3	8	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA48,6X8,32	8	Flash Memories	.8 mm	70 Cel	512KX8	512K	0 Cel	1,2,1,7	YES	Tin/Silver/Copper (Sn95.5Ag4.0Cu0.5)	YES	BOTTOM	R-PBGA-B48	3.6 V	1.35 mm	100000 Write/Erase Cycles	6 mm	Not Qualified	TOP	4194304 bit	2.7 V	CONFIGURABLE AS 256K X 16		e1		NOR TYPE	.00005 Amp	9 mm		150 ns	2.7	YES
M59DR032EA10ZB1E	STMicroelectronics	FLASH	COMMERCIAL	48	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS			2097152 words	1.8			16	GRID ARRAY, LOW PROFILE, FINE PITCH				.75 mm	70 Cel	2MX16	2M	0 Cel			TIN SILVER COPPER		BOTTOM	R-PBGA-B48	2.2 V	1.35 mm		7 mm	Not Qualified	TOP	33554432 bit	1.65 V			e1		NOR TYPE		12 mm		100 ns	1.8
M29W400B-150ZA6	STMicroelectronics	FLASH	INDUSTRIAL	48	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	20 mA	524288 words		YES	3/3.3	8	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA48,6X8,32	8	Flash Memories	.8 mm	85 Cel	512KX8	512K	-40 Cel	1,2,1,7	YES	TIN SILVER COPPER	YES	BOTTOM	R-PBGA-B48	3.6 V	1.35 mm	100000 Write/Erase Cycles	6 mm	Not Qualified	BOTTOM	4194304 bit	2.7 V	CONFG AS 256K X 16; BOTTOM BOOT BLOCK		e1		NOR TYPE	.00005 Amp	9 mm		150 ns	2.7	YES
M29W160BT90ZA6	STMicroelectronics	FLASH	INDUSTRIAL	48	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	20 mA	1048576 words	3.3	YES	3/3.3	16	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA48,6X8,32	8	Flash Memories	.8 mm	85 Cel	1MX16	1M	-40 Cel	1,2,1,31	YES	TIN LEAD	YES	BOTTOM	R-PBGA-B48	3.6 V	1.35 mm		8 mm	Not Qualified	TOP	16777216 bit	2.7 V	TOP BOOT BLOCK		e0		NOR TYPE	.0001 Amp	9 mm		90 ns	2.7	YES
M59DR032B120ZB1T	STMicroelectronics	FLASH	COMMERCIAL	48	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	4K,32K	40 mA	2097152 words	1.8	YES	1.8/2	16	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA48,6X8,30		Flash Memories	.75 mm	70 Cel	2MX16	2M	0 Cel	8,63	YES	Tin/Silver/Copper (Sn95.5Ag4.0Cu0.5)		BOTTOM	R-PBGA-B48	2.2 V	1.35 mm		7 mm	Not Qualified	BOTTOM	33554432 bit	1.65 V		4	e1		NOR TYPE	.00001 Amp	12 mm	YES	120 ns	1.8	YES
M59DR016C120ZB6T	STMicroelectronics	FLASH	INDUSTRIAL	48	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	4K,32K	40 mA	1048576 words	1.8	YES	1.8/2	16	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA48,6X8,30		Flash Memories	.75 mm	85 Cel	1MX16	1M	-40 Cel	8,31	YES	Tin/Silver/Copper (Sn95.5Ag4.0Cu0.5)		BOTTOM	R-PBGA-B48	2.2 V	1.35 mm		7 mm	Not Qualified	TOP	16777216 bit	1.65 V		4	e1		NOR TYPE	.000005 Amp	12 mm	YES	120 ns	1.8	YES
M59DR032A120ZB1T	STMicroelectronics	FLASH	COMMERCIAL	48	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	4K,32K	40 mA	2097152 words	1.8	YES	1.8/2	16	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA48,6X8,30		Flash Memories	.75 mm	70 Cel	2MX16	2M	0 Cel	8,63	YES	Tin/Silver/Copper (Sn95.5Ag4.0Cu0.5)		BOTTOM	R-PBGA-B48	2.2 V	1.35 mm		7 mm	Not Qualified	TOP	33554432 bit	1.65 V		4	e1		NOR TYPE	.00001 Amp	12 mm	YES	120 ns	1.8	YES

Flash Memory

Flash memory is a type of non-volatile computer memory that is commonly used in digital devices such as USB drives, solid-state drives, and digital cameras. It is a type of EEPROM (Electrically Erasable Programmable Read-Only Memory) that allows data to be erased and reprogrammed in blocks instead of one byte at a time. Flash memory uses a floating gate transistor to store data, which allows it to retain information even when the power is turned off.

Flash memory is widely used in digital devices because of its high capacity, small size, and fast access times. It is also more durable than other types of memory, such as hard disk drives, because it has no moving parts. This makes it ideal for use in portable devices that may be subject to physical shock or vibration.

There are two types of flash memory: NOR flash and NAND flash. NOR flash is faster than NAND flash, but it has lower density and higher cost per bit. NOR flash is typically used for code storage, such as firmware or boot code, because it provides faster access times. NAND flash has higher density and lower cost per bit, which makes it ideal for data storage applications.

Flash memory has a limited lifespan, as it can only be erased and reprogrammed a limited number of times. This is because the process of erasing and reprogramming the memory causes wear and tear on the floating gate transistor. However, modern flash memory devices have a sophisticated wear-leveling algorithm that distributes writes evenly across the memory, which extends the lifespan of the device.