LFBGA Flash Memory 692

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Terminal Form	Parallel or Serial	Operating Mode	Sector Size (Words)	Maximum Supply Current	No. of Words	Nominal Supply Voltage / Vsup (V)	Toggle Bit	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Organization	No. of Words Code	Minimum Operating Temperature	No. of Sectors/Size	Command User Interface	Terminal Finish	Ready or Busy	Terminal Position	JESD-30 Code	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Maximum Clock Frequency (fCLK)	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	Page Size (words)	JESD-609 Code	Maximum Standby Current	Length	Maximum Access Time	Programming Voltage (V)	Data Polling
NAND08GW4B3AZC6T	STMicroelectronics	FLASH	INDUSTRIAL	63	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	64K	20 mA	536870912 words	3	NO	3/3.3	16	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA63,10X12,32	Flash Memories	.8 mm	85 Cel	512MX16	512M	-40 Cel	8K	YES	TIN LEAD	YES	BOTTOM	R-PBGA-B63	3.6 V	1.4 mm		8.5 mm	Not Qualified	8589934592 bit	2.7 V		1K	e0	.00005 Amp	15 mm	35 ns	3	NO
NAND08GAH0AZA5E	STMicroelectronics	FLASH CARD	COMMERCIAL EXTENDED	169	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	SERIAL	SYNCHRONOUS			134217728 words	1.8		1.8/3,3	8	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA169,14X28,20	Other Memory ICs	.5 mm	85 Cel	128MX8	128M	-25 Cel			TIN SILVER COPPER		BOTTOM	R-PBGA-B169	1.95 V	1.4 mm	52 MHz	12 mm	Not Qualified	1073741824 bit	1.65 V	ALSO OPERATES WITH 3V SUPPLY		e1		16 mm		3
NAND08GR3B2AZC1	STMicroelectronics	FLASH	COMMERCIAL	63	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	128K	15 mA	1073741824 words	1.8	NO	1.8	8	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA63,10X12,32	Flash Memories	.8 mm	70 Cel	1GX8	1G	0 Cel	8K	YES	TIN LEAD	YES	BOTTOM	R-PBGA-B63	1.95 V	1.4 mm		8.5 mm	Not Qualified	8589934592 bit	1.7 V		2K	e0	.00005 Amp	15 mm	35 ns	1.8	NO
NAND08GW4B2CZC6F	STMicroelectronics	FLASH	INDUSTRIAL	63	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS			536870912 words	3			16	GRID ARRAY, LOW PROFILE, FINE PITCH			.8 mm	85 Cel	512MX16	512M	-40 Cel			TIN SILVER COPPER		BOTTOM	R-PBGA-B63	3.6 V	1.4 mm		8.5 mm	Not Qualified	8589934592 bit	2.7 V			e1		15 mm	35 ns	3
NAND08GR3B2BZC1E	STMicroelectronics	FLASH	COMMERCIAL	63	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS			1073741824 words	1.8			8	GRID ARRAY, LOW PROFILE, FINE PITCH			.8 mm	70 Cel	1GX8	1G	0 Cel			TIN SILVER COPPER		BOTTOM	R-PBGA-B63	1.95 V	1.4 mm		8.5 mm	Not Qualified	8589934592 bit	1.7 V			e1		15 mm	35 ns	1.8
NAND08GR4B2CZC1F	STMicroelectronics	FLASH	COMMERCIAL	63	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS			536870912 words	1.8			16	GRID ARRAY, LOW PROFILE, FINE PITCH			.8 mm	70 Cel	512MX16	512M	0 Cel			TIN SILVER COPPER		BOTTOM	R-PBGA-B63	1.95 V	1.4 mm		8.5 mm	Not Qualified	8589934592 bit	1.7 V			e1		15 mm	35 ns	1.8
NAND08GR3B2CZC1E	STMicroelectronics	FLASH	COMMERCIAL	63	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS			1073741824 words	1.8			8	GRID ARRAY, LOW PROFILE, FINE PITCH			.8 mm	70 Cel	1GX8	1G	0 Cel			TIN SILVER COPPER		BOTTOM	R-PBGA-B63	1.95 V	1.4 mm		8.5 mm	Not Qualified	8589934592 bit	1.7 V			e1		15 mm	35 ns	1.8
NAND08GR3B3AZC1F	STMicroelectronics	FLASH	COMMERCIAL	63	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	128K	15 mA	1073741824 words	1.8	NO	1.8	8	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA63,10X12,32	Flash Memories	.8 mm	70 Cel	1GX8	1G	0 Cel	8K	YES	TIN SILVER COPPER	YES	BOTTOM	R-PBGA-B63	1.95 V	1.4 mm		8.5 mm	Not Qualified	8589934592 bit	1.7 V		2K	e1	.00005 Amp	15 mm	35 ns	1.8	NO
NAND08GR4B3AZC6E	STMicroelectronics	FLASH	INDUSTRIAL	63	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	64K	15 mA	536870912 words	1.8	NO	1.8	16	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA63,10X12,32	Flash Memories	.8 mm	85 Cel	512MX16	512M	-40 Cel	8K	YES	TIN SILVER COPPER	YES	BOTTOM	R-PBGA-B63	1.95 V	1.4 mm		8.5 mm	Not Qualified	8589934592 bit	1.7 V		1K	e1	.00005 Amp	15 mm	35 ns	1.8	NO
NAND08GR4B2CZC1	STMicroelectronics	FLASH	COMMERCIAL	63	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS			536870912 words	1.8			16	GRID ARRAY, LOW PROFILE, FINE PITCH			.8 mm	70 Cel	512MX16	512M	0 Cel			TIN LEAD		BOTTOM	R-PBGA-B63	1.95 V	1.4 mm		8.5 mm	Not Qualified	8589934592 bit	1.7 V			e0		15 mm	35 ns	1.8
NAND08GW4B3CZC1	STMicroelectronics	FLASH	COMMERCIAL	63	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS			536870912 words	3			16	GRID ARRAY, LOW PROFILE, FINE PITCH			.8 mm	70 Cel	512MX16	512M	0 Cel			TIN LEAD		BOTTOM	R-PBGA-B63	3.6 V	1.4 mm		8.5 mm	Not Qualified	8589934592 bit	2.7 V			e0		15 mm	35 ns	3
NAND08GR4B3CZC6T	STMicroelectronics	FLASH	INDUSTRIAL	63	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS			536870912 words	1.8			16	GRID ARRAY, LOW PROFILE, FINE PITCH			.8 mm	85 Cel	512MX16	512M	-40 Cel			TIN LEAD		BOTTOM	R-PBGA-B63	1.95 V	1.4 mm		8.5 mm	Not Qualified	8589934592 bit	1.7 V			e0		15 mm	35 ns	1.8
NAND08GR4B3CZC6	STMicroelectronics	FLASH	INDUSTRIAL	63	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS			536870912 words	1.8			16	GRID ARRAY, LOW PROFILE, FINE PITCH			.8 mm	85 Cel	512MX16	512M	-40 Cel			TIN LEAD		BOTTOM	R-PBGA-B63	1.95 V	1.4 mm		8.5 mm	Not Qualified	8589934592 bit	1.7 V			e0		15 mm	35 ns	1.8
NAND08GW3B2BZC1F	STMicroelectronics	FLASH	COMMERCIAL	63	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS			1073741824 words	3			8	GRID ARRAY, LOW PROFILE, FINE PITCH			.8 mm	70 Cel	1GX8	1G	0 Cel			TIN SILVER COPPER		BOTTOM	R-PBGA-B63	3.6 V	1.4 mm		8.5 mm	Not Qualified	8589934592 bit	2.7 V			e1		15 mm	35 ns	3
NAND08GW3B2BZC6F	STMicroelectronics	FLASH	INDUSTRIAL	63	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS			1073741824 words	3			8	GRID ARRAY, LOW PROFILE, FINE PITCH			.8 mm	85 Cel	1GX8	1G	-40 Cel			TIN SILVER COPPER		BOTTOM	R-PBGA-B63	3.6 V	1.4 mm		8.5 mm	Not Qualified	8589934592 bit	2.7 V			e1		15 mm	35 ns	3
NAND08GR3B2BZC6	STMicroelectronics	FLASH	INDUSTRIAL	63	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS			1073741824 words	1.8			8	GRID ARRAY, LOW PROFILE, FINE PITCH			.8 mm	85 Cel	1GX8	1G	-40 Cel			TIN LEAD		BOTTOM	R-PBGA-B63	1.95 V	1.4 mm		8.5 mm	Not Qualified	8589934592 bit	1.7 V			e0		15 mm	35 ns	1.8
NAND08GW4B2CZC1	STMicroelectronics	FLASH	COMMERCIAL	63	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS			536870912 words	3			16	GRID ARRAY, LOW PROFILE, FINE PITCH			.8 mm	70 Cel	512MX16	512M	0 Cel			TIN LEAD		BOTTOM	R-PBGA-B63	3.6 V	1.4 mm		8.5 mm	Not Qualified	8589934592 bit	2.7 V			e0		15 mm	35 ns	3
NAND08GW4B2BZC6	STMicroelectronics	FLASH	INDUSTRIAL	63	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS			536870912 words	3			16	GRID ARRAY, LOW PROFILE, FINE PITCH			.8 mm	85 Cel	512MX16	512M	-40 Cel			TIN LEAD		BOTTOM	R-PBGA-B63	3.6 V	1.4 mm		8.5 mm	Not Qualified	8589934592 bit	2.7 V			e0		15 mm	35 ns	3
NAND08GR3B2BZC6E	STMicroelectronics	FLASH	INDUSTRIAL	63	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS			1073741824 words	1.8			8	GRID ARRAY, LOW PROFILE, FINE PITCH			.8 mm	85 Cel	1GX8	1G	-40 Cel			TIN SILVER COPPER		BOTTOM	R-PBGA-B63	1.95 V	1.4 mm		8.5 mm	Not Qualified	8589934592 bit	1.7 V			e1		15 mm	35 ns	1.8
NAND08GR4B2AZC1T	STMicroelectronics	FLASH	COMMERCIAL	63	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	64K	15 mA	536870912 words	1.8	NO	1.8	16	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA63,10X12,32	Flash Memories	.8 mm	70 Cel	512MX16	512M	0 Cel	8K	YES	TIN LEAD	YES	BOTTOM	R-PBGA-B63	1.95 V	1.4 mm		8.5 mm	Not Qualified	8589934592 bit	1.7 V		1K	e0	.00005 Amp	15 mm	35 ns	1.8	NO
NAND08GW3B3BZC1E	STMicroelectronics	FLASH	COMMERCIAL	63	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS			1073741824 words	3			8	GRID ARRAY, LOW PROFILE, FINE PITCH			.8 mm	70 Cel	1GX8	1G	0 Cel			TIN SILVER COPPER		BOTTOM	R-PBGA-B63	3.6 V	1.4 mm		8.5 mm	Not Qualified	8589934592 bit	2.7 V			e1		15 mm	35 ns	3
NAND08GR4B2BZC1E	STMicroelectronics	FLASH	COMMERCIAL	63	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS			536870912 words	1.8			16	GRID ARRAY, LOW PROFILE, FINE PITCH			.8 mm	70 Cel	512MX16	512M	0 Cel			TIN SILVER COPPER		BOTTOM	R-PBGA-B63	1.95 V	1.4 mm		8.5 mm	Not Qualified	8589934592 bit	1.7 V			e1		15 mm	35 ns	1.8
NAND08GW4B3BZC1	STMicroelectronics	FLASH	COMMERCIAL	63	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS			536870912 words	3			16	GRID ARRAY, LOW PROFILE, FINE PITCH			.8 mm	70 Cel	512MX16	512M	0 Cel			TIN LEAD		BOTTOM	R-PBGA-B63	3.6 V	1.4 mm		8.5 mm	Not Qualified	8589934592 bit	2.7 V			e0		15 mm	35 ns	3
NAND08GR3B3BZC1F	STMicroelectronics	FLASH	COMMERCIAL	63	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS			1073741824 words	1.8			8	GRID ARRAY, LOW PROFILE, FINE PITCH			.8 mm	70 Cel	1GX8	1G	0 Cel			TIN SILVER COPPER		BOTTOM	R-PBGA-B63	1.95 V	1.4 mm		8.5 mm	Not Qualified	8589934592 bit	1.7 V			e1		15 mm	35 ns	1.8
NAND08GW4B2CZC1E	STMicroelectronics	FLASH	COMMERCIAL	63	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS			536870912 words	3			16	GRID ARRAY, LOW PROFILE, FINE PITCH			.8 mm	70 Cel	512MX16	512M	0 Cel			TIN SILVER COPPER		BOTTOM	R-PBGA-B63	3.6 V	1.4 mm		8.5 mm	Not Qualified	8589934592 bit	2.7 V			e1		15 mm	35 ns	3
NAND08GR4B2CZC6T	STMicroelectronics	FLASH	INDUSTRIAL	63	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS			536870912 words	1.8			16	GRID ARRAY, LOW PROFILE, FINE PITCH			.8 mm	85 Cel	512MX16	512M	-40 Cel			TIN LEAD		BOTTOM	R-PBGA-B63	1.95 V	1.4 mm		8.5 mm	Not Qualified	8589934592 bit	1.7 V			e0		15 mm	35 ns	1.8
NAND08GW4B3CZC1T	STMicroelectronics	FLASH	COMMERCIAL	63	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS			536870912 words	3			16	GRID ARRAY, LOW PROFILE, FINE PITCH			.8 mm	70 Cel	512MX16	512M	0 Cel			TIN LEAD		BOTTOM	R-PBGA-B63	3.6 V	1.4 mm		8.5 mm	Not Qualified	8589934592 bit	2.7 V			e0		15 mm	35 ns	3
NAND08GR3B3BZC6	STMicroelectronics	FLASH	INDUSTRIAL	63	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS			1073741824 words	1.8			8	GRID ARRAY, LOW PROFILE, FINE PITCH			.8 mm	85 Cel	1GX8	1G	-40 Cel			TIN LEAD		BOTTOM	R-PBGA-B63	1.95 V	1.4 mm		8.5 mm	Not Qualified	8589934592 bit	1.7 V			e0		15 mm	35 ns	1.8
NAND08GR4B3CZC1F	STMicroelectronics	FLASH	COMMERCIAL	63	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS			536870912 words	1.8			16	GRID ARRAY, LOW PROFILE, FINE PITCH			.8 mm	70 Cel	512MX16	512M	0 Cel			TIN SILVER COPPER		BOTTOM	R-PBGA-B63	1.95 V	1.4 mm		8.5 mm	Not Qualified	8589934592 bit	1.7 V			e1		15 mm	35 ns	1.8
NAND16GAH0DZA5E	STMicroelectronics	FLASH CARD	COMMERCIAL EXTENDED	169	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	SERIAL	SYNCHRONOUS			268435456 words	1.8		1.8/3,3	8	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA169,14X28,20	Other Memory ICs	.5 mm	85 Cel	256MX8	256M	-25 Cel			TIN SILVER COPPER		BOTTOM	R-PBGA-B169	1.95 V	1.4 mm	52 MHz	12 mm	Not Qualified	2147483648 bit	1.65 V	ALSO OPERATES WITH 3V SUPPLY		e1		16 mm		3
NAND08GR4B2AZC6F	STMicroelectronics	FLASH	INDUSTRIAL	63	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	64K	15 mA	536870912 words	1.8	NO	1.8	16	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA63,10X12,32	Flash Memories	.8 mm	85 Cel	512MX16	512M	-40 Cel	8K	YES	TIN SILVER COPPER	YES	BOTTOM	R-PBGA-B63	1.95 V	1.4 mm		8.5 mm	Not Qualified	8589934592 bit	1.7 V		1K	e1	.00005 Amp	15 mm	35 ns	1.8	NO
NAND08GR4B3CZC6F	STMicroelectronics	FLASH	INDUSTRIAL	63	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS			536870912 words	1.8			16	GRID ARRAY, LOW PROFILE, FINE PITCH			.8 mm	85 Cel	512MX16	512M	-40 Cel			TIN SILVER COPPER		BOTTOM	R-PBGA-B63	1.95 V	1.4 mm		8.5 mm	Not Qualified	8589934592 bit	1.7 V			e1		15 mm	35 ns	1.8
NAND08GW4B3BZC6E	STMicroelectronics	FLASH	INDUSTRIAL	63	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS			536870912 words	3			16	GRID ARRAY, LOW PROFILE, FINE PITCH			.8 mm	85 Cel	512MX16	512M	-40 Cel			TIN SILVER COPPER		BOTTOM	R-PBGA-B63	3.6 V	1.4 mm		8.5 mm	Not Qualified	8589934592 bit	2.7 V			e1		15 mm	35 ns	3
NAND08GW3B3AZC6	STMicroelectronics	FLASH	INDUSTRIAL	63	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	128K	20 mA	1073741824 words	3	NO	3/3.3	8	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA63,10X12,32	Flash Memories	.8 mm	85 Cel	1GX8	1G	-40 Cel	8K	YES	TIN LEAD	YES	BOTTOM	R-PBGA-B63	3.6 V	1.4 mm		8.5 mm	Not Qualified	8589934592 bit	2.7 V		2K	e0	.00005 Amp	15 mm	35 ns	3	NO
NAND08GW3B2AZC1F	STMicroelectronics	FLASH	COMMERCIAL	63	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	128K	20 mA	1073741824 words	3	NO	3/3.3	8	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA63,10X12,32	Flash Memories	.8 mm	70 Cel	1GX8	1G	0 Cel	8K	YES	TIN SILVER COPPER	YES	BOTTOM	R-PBGA-B63	3.6 V	1.4 mm		8.5 mm	Not Qualified	8589934592 bit	2.7 V		2K	e1	.00005 Amp	15 mm	35 ns	3	NO
NAND08GR4B3BZC6	STMicroelectronics	FLASH	INDUSTRIAL	63	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS			536870912 words	1.8			16	GRID ARRAY, LOW PROFILE, FINE PITCH			.8 mm	85 Cel	512MX16	512M	-40 Cel			TIN LEAD		BOTTOM	R-PBGA-B63	1.95 V	1.4 mm		8.5 mm	Not Qualified	8589934592 bit	1.7 V			e0		15 mm	35 ns	1.8
NAND08GW3B2BZC1	STMicroelectronics	FLASH	COMMERCIAL	63	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS			1073741824 words	3			8	GRID ARRAY, LOW PROFILE, FINE PITCH			.8 mm	70 Cel	1GX8	1G	0 Cel			TIN LEAD		BOTTOM	R-PBGA-B63	3.6 V	1.4 mm		8.5 mm	Not Qualified	8589934592 bit	2.7 V			e0		15 mm	35 ns	3
NAND08GR3B3BZC1E	STMicroelectronics	FLASH	COMMERCIAL	63	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS			1073741824 words	1.8			8	GRID ARRAY, LOW PROFILE, FINE PITCH			.8 mm	70 Cel	1GX8	1G	0 Cel			TIN SILVER COPPER		BOTTOM	R-PBGA-B63	1.95 V	1.4 mm		8.5 mm	Not Qualified	8589934592 bit	1.7 V			e1		15 mm	35 ns	1.8
NAND08GW4B3CZC6E	STMicroelectronics	FLASH	INDUSTRIAL	63	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS			536870912 words	3			16	GRID ARRAY, LOW PROFILE, FINE PITCH			.8 mm	85 Cel	512MX16	512M	-40 Cel			TIN SILVER COPPER		BOTTOM	R-PBGA-B63	3.6 V	1.4 mm		8.5 mm	Not Qualified	8589934592 bit	2.7 V			e1		15 mm	35 ns	3
NAND08GR3B2BZC1F	STMicroelectronics	FLASH	COMMERCIAL	63	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS			1073741824 words	1.8			8	GRID ARRAY, LOW PROFILE, FINE PITCH			.8 mm	70 Cel	1GX8	1G	0 Cel			TIN SILVER COPPER		BOTTOM	R-PBGA-B63	1.95 V	1.4 mm		8.5 mm	Not Qualified	8589934592 bit	1.7 V			e1		15 mm	35 ns	1.8
NAND08GW4B3BZC6T	STMicroelectronics	FLASH	INDUSTRIAL	63	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS			536870912 words	3			16	GRID ARRAY, LOW PROFILE, FINE PITCH			.8 mm	85 Cel	512MX16	512M	-40 Cel			TIN LEAD		BOTTOM	R-PBGA-B63	3.6 V	1.4 mm		8.5 mm	Not Qualified	8589934592 bit	2.7 V			e0		15 mm	35 ns	3
NAND08GR4B2AZC1	STMicroelectronics	FLASH	COMMERCIAL	63	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	64K	15 mA	536870912 words	1.8	NO	1.8	16	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA63,10X12,32	Flash Memories	.8 mm	70 Cel	512MX16	512M	0 Cel	8K	YES	TIN LEAD	YES	BOTTOM	R-PBGA-B63	1.95 V	1.4 mm		8.5 mm	Not Qualified	8589934592 bit	1.7 V		1K	e0	.00005 Amp	15 mm	35 ns	1.8	NO
NAND08GR3B2AZC6E	STMicroelectronics	FLASH	INDUSTRIAL	63	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	128K	15 mA	1073741824 words	1.8	NO	1.8	8	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA63,10X12,32	Flash Memories	.8 mm	85 Cel	1GX8	1G	-40 Cel	8K	YES	TIN SILVER COPPER	YES	BOTTOM	R-PBGA-B63	1.95 V	1.4 mm		8.5 mm	Not Qualified	8589934592 bit	1.7 V		2K	e1	.00005 Amp	15 mm	35 ns	1.8	NO
NAND08GW3B2BZC6	STMicroelectronics	FLASH	INDUSTRIAL	63	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS			1073741824 words	3			8	GRID ARRAY, LOW PROFILE, FINE PITCH			.8 mm	85 Cel	1GX8	1G	-40 Cel			TIN LEAD		BOTTOM	R-PBGA-B63	3.6 V	1.4 mm		8.5 mm	Not Qualified	8589934592 bit	2.7 V			e0		15 mm	35 ns	3
NAND08GW4B3CZC1F	STMicroelectronics	FLASH	COMMERCIAL	63	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS			536870912 words	3			16	GRID ARRAY, LOW PROFILE, FINE PITCH			.8 mm	70 Cel	512MX16	512M	0 Cel			TIN SILVER COPPER		BOTTOM	R-PBGA-B63	3.6 V	1.4 mm		8.5 mm	Not Qualified	8589934592 bit	2.7 V			e1		15 mm	35 ns	3
NAND08GW3B2CZC6F	STMicroelectronics	FLASH	INDUSTRIAL	63	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS			1073741824 words	3			8	GRID ARRAY, LOW PROFILE, FINE PITCH			.8 mm	85 Cel	1GX8	1G	-40 Cel			TIN SILVER COPPER		BOTTOM	R-PBGA-B63	3.6 V	1.4 mm		8.5 mm	Not Qualified	8589934592 bit	2.7 V			e1		15 mm	35 ns	3
NAND08GR3B2CZC6	STMicroelectronics	FLASH	INDUSTRIAL	63	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS			1073741824 words	1.8			8	GRID ARRAY, LOW PROFILE, FINE PITCH			.8 mm	85 Cel	1GX8	1G	-40 Cel			TIN LEAD		BOTTOM	R-PBGA-B63	1.95 V	1.4 mm		8.5 mm	Not Qualified	8589934592 bit	1.7 V			e0		15 mm	35 ns	1.8
NAND08GW3B3CZC1F	STMicroelectronics	FLASH	COMMERCIAL	63	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS			1073741824 words	3			8	GRID ARRAY, LOW PROFILE, FINE PITCH			.8 mm	70 Cel	1GX8	1G	0 Cel			TIN SILVER COPPER		BOTTOM	R-PBGA-B63	3.6 V	1.4 mm		8.5 mm	Not Qualified	8589934592 bit	2.7 V			e1		15 mm	35 ns	3

Flash Memory

Flash memory is a type of non-volatile computer memory that is commonly used in digital devices such as USB drives, solid-state drives, and digital cameras. It is a type of EEPROM (Electrically Erasable Programmable Read-Only Memory) that allows data to be erased and reprogrammed in blocks instead of one byte at a time. Flash memory uses a floating gate transistor to store data, which allows it to retain information even when the power is turned off.

Flash memory is widely used in digital devices because of its high capacity, small size, and fast access times. It is also more durable than other types of memory, such as hard disk drives, because it has no moving parts. This makes it ideal for use in portable devices that may be subject to physical shock or vibration.

There are two types of flash memory: NOR flash and NAND flash. NOR flash is faster than NAND flash, but it has lower density and higher cost per bit. NOR flash is typically used for code storage, such as firmware or boot code, because it provides faster access times. NAND flash has higher density and lower cost per bit, which makes it ideal for data storage applications.

Flash memory has a limited lifespan, as it can only be erased and reprogrammed a limited number of times. This is because the process of erasing and reprogramming the memory causes wear and tear on the floating gate transistor. However, modern flash memory devices have a sophisticated wear-leveling algorithm that distributes writes evenly across the memory, which extends the lifespan of the device.