LFBGA Flash Memory 692

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Terminal Form	Parallel or Serial	Operating Mode	Sector Size (Words)	Maximum Supply Current	No. of Words	Nominal Supply Voltage / Vsup (V)	Toggle Bit	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Organization	No. of Words Code	Minimum Operating Temperature	No. of Sectors/Size	Command User Interface	Terminal Finish	Ready or Busy	Terminal Position	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Width	Qualification	Boot Block	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	Page Size (words)	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Type	Maximum Standby Current	Length	Common Flash Interface	Maximum Access Time	Programming Voltage (V)	Data Polling
K8C1015EBM-DE1F0	Samsung	FLASH	OTHER	167	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS			33554432 words	1.8			16	GRID ARRAY, LOW PROFILE, FINE PITCH			.8 mm	85 Cel	32MX16	32M	-25 Cel					BOTTOM	R-PBGA-B167		1.95 V	1.4 mm	10.5 mm	Not Qualified	BOTTOM	536870912 bit	1.7 V	BOTTOM BOOT BLOCK, SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE							14 mm		110 ns	1.8
K8C5415EBM-DE1F	Samsung	FLASH	OTHER	167	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS			16777216 words	1.8			16	GRID ARRAY, LOW PROFILE, FINE PITCH			.8 mm	85 Cel	16MX16	16M	-25 Cel					BOTTOM	R-PBGA-B167		1.95 V	1.4 mm	10.5 mm	Not Qualified	BOTTOM	268435456 bit	1.7 V						NOR TYPE		14 mm		100 ns	1.8
K8C1115ETM-DC1C0	Samsung	FLASH	COMMERCIAL	167	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS			33554432 words	1.8			16	GRID ARRAY, LOW PROFILE, FINE PITCH			.8 mm	70 Cel	32MX16	32M	0 Cel					BOTTOM	R-PBGA-B167		1.95 V	1.4 mm	10.5 mm		TOP	536870912 bit	1.7 V	TOP BOOT BLOCK, SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE							14 mm		110 ns	1.8
K8C5715ETM-DE1C0	Samsung	FLASH	OTHER	167	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	16K,64K	55 mA	16777216 words	1.8	YES	1.8	16	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA167,12X15,32	Flash Memories	.8 mm	85 Cel	16MX16	16M	-25 Cel	4,255	YES	TIN SILVER COPPER	YES	BOTTOM	R-PBGA-B167	2	1.95 V	1.4 mm	10.5 mm	Not Qualified	TOP	268435456 bit	1.7 V	SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE		e1			NOR TYPE	.00002 Amp	14 mm	YES	100 ns	1.8	YES
K8C1015ETM-DE1C0	Samsung	FLASH	OTHER	167	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	16K,64K	70 mA	33554432 words	1.8	YES	1.8	16	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA167,12X15,32	Flash Memories	.8 mm	85 Cel	32MX16	32M	-25 Cel	4,511	YES		YES	BOTTOM	R-PBGA-B167	3	1.95 V	1.4 mm	10.5 mm	Not Qualified	TOP	536870912 bit	1.7 V	TOP BOOT BLOCK, SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE				260	NOR TYPE	.00002 Amp	14 mm	YES	110 ns	1.8	YES
K8C5715EBM-FC1F0	Samsung	FLASH	COMMERCIAL	167	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	16K,64K	55 mA	16777216 words	1.8	YES	1.8	16	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA167,12X15,32	Flash Memories	.8 mm	70 Cel	16MX16	16M	0 Cel	4,255	YES	TIN LEAD	YES	BOTTOM	R-PBGA-B167		1.95 V	1.4 mm	10.5 mm	Not Qualified	BOTTOM	268435456 bit	1.7 V	SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE		e0			NOR TYPE	.00002 Amp	14 mm	YES	100 ns	1.8	YES
K8C5415EBM-FC1F	Samsung	FLASH	COMMERCIAL	167	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS			16777216 words	1.8			16	GRID ARRAY, LOW PROFILE, FINE PITCH			.8 mm	70 Cel	16MX16	16M	0 Cel					BOTTOM	R-PBGA-B167		1.95 V	1.4 mm	10.5 mm	Not Qualified	BOTTOM	268435456 bit	1.7 V						NOR TYPE		14 mm		100 ns	1.8
K8C1315EBM-DE1F0	Samsung	FLASH	OTHER	167	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	16K,64K	70 mA	33554432 words	1.8	YES	1.8	16	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA167,12X15,32	Flash Memories	.8 mm	85 Cel	32MX16	32M	-25 Cel	4,511	YES	TIN SILVER COPPER	YES	BOTTOM	R-PBGA-B167	3	1.95 V	1.4 mm	10.5 mm	Not Qualified	BOTTOM	536870912 bit	1.7 V	SYNCHRONOUS BURST MODE OPERATION IS ALSO POSSIBLE		e1		260	NOR TYPE	.00002 Amp	14 mm	YES	110 ns	1.8	YES
K8C5715ETM-DC1F0	Samsung	FLASH	COMMERCIAL	167	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	16K,64K	55 mA	16777216 words	1.8	YES	1.8	16	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA167,12X15,32	Flash Memories	.8 mm	70 Cel	16MX16	16M	0 Cel	4,255	YES	TIN SILVER COPPER	YES	BOTTOM	R-PBGA-B167	2	1.95 V	1.4 mm	10.5 mm	Not Qualified	TOP	268435456 bit	1.7 V	SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE		e1			NOR TYPE	.00002 Amp	14 mm	YES	100 ns	1.8	YES
K8C1215EBM-DC1F0	Samsung	FLASH	COMMERCIAL	167	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS			33554432 words	1.8			16	GRID ARRAY, LOW PROFILE, FINE PITCH			.8 mm	70 Cel	32MX16	32M	0 Cel			TIN SILVER COPPER		BOTTOM	R-PBGA-B167	2	1.95 V	1.4 mm	10.5 mm	Not Qualified	BOTTOM	536870912 bit	1.7 V	SYNCHRONOUS BURST MODE OPERATION IS ALSO POSSIBLE		e1			NOR TYPE		14 mm		110 ns	1.8
K8C1315EBM-DE1C0	Samsung	FLASH	OTHER	167	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS			33554432 words	1.8			16	GRID ARRAY, LOW PROFILE, FINE PITCH			.8 mm	85 Cel	32MX16	32M	-25 Cel			TIN SILVER COPPER		BOTTOM	R-PBGA-B167	2	1.95 V	1.4 mm	10.5 mm	Not Qualified	BOTTOM	536870912 bit	1.7 V	SYNCHRONOUS BURST MODE OPERATION IS ALSO POSSIBLE		e1			NOR TYPE		14 mm		110 ns	1.8
K8C1315ETM-DE1D0	Samsung	FLASH	OTHER	167	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS			33554432 words	1.8			16	GRID ARRAY, LOW PROFILE, FINE PITCH			.8 mm	85 Cel	32MX16	32M	-25 Cel			TIN SILVER COPPER		BOTTOM	R-PBGA-B167	2	1.95 V	1.4 mm	10.5 mm	Not Qualified	TOP	536870912 bit	1.7 V	SYNCHRONOUS BURST MODE OPERATION IS ALSO POSSIBLE		e1			NOR TYPE		14 mm		110 ns	1.8
KFW4G16Q2M-DEB50	Samsung	FLASH	OTHER	63	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	64K	22 mA	268435456 words	1.8	NO	1.8	16	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA63,10X12,32	Flash Memories	.8 mm	85 Cel	256MX16	256M	-30 Cel	4K	YES	TIN SILVER COPPER	YES	BOTTOM	R-PBGA-B63	3	1.95 V	1.4 mm	11 mm	Not Qualified		4294967296 bit	1.7 V	SYNCHRONOUS BURST OPERATION IS POSSIBLE	1K	e1		260		.0001 Amp	13 mm		76 ns	1.8	NO
K8C5615EBM-FE1F0	Samsung	FLASH	OTHER	167	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	16K,64K	55 mA	16777216 words	1.8	YES	1.8	16	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA167,12X15,32	Flash Memories	.8 mm	85 Cel	16MX16	16M	-25 Cel	4,255	YES	TIN LEAD	YES	BOTTOM	R-PBGA-B167		1.95 V	1.4 mm	10.5 mm	Not Qualified	BOTTOM	268435456 bit	1.7 V	SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE		e0			NOR TYPE	.00002 Amp	14 mm	YES	100 ns	1.8	YES
K8C5715EBM-FC1E0	Samsung	FLASH	COMMERCIAL	167	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	16K,64K	55 mA	16777216 words	1.8	YES	1.8	16	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA167,12X15,32	Flash Memories	.8 mm	70 Cel	16MX16	16M	0 Cel	4,255	YES	TIN LEAD	YES	BOTTOM	R-PBGA-B167		1.95 V	1.4 mm	10.5 mm	Not Qualified	BOTTOM	268435456 bit	1.7 V	SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE		e0			NOR TYPE	.00002 Amp	14 mm	YES	100 ns	1.8	YES
K8C5615EBM-DC1E0	Samsung	FLASH	COMMERCIAL	167	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	16K,64K	55 mA	16777216 words	1.8	YES	1.8	16	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA167,12X15,32	Flash Memories	.8 mm	70 Cel	16MX16	16M	0 Cel	4,255	YES	TIN SILVER COPPER	YES	BOTTOM	R-PBGA-B167	2	1.95 V	1.4 mm	10.5 mm	Not Qualified	BOTTOM	268435456 bit	1.7 V	SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE		e1			NOR TYPE	.00002 Amp	14 mm	YES	100 ns	1.8	YES
K8C5515EBM-FE1F	Samsung	FLASH	OTHER	167	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS			16777216 words	1.8			16	GRID ARRAY, LOW PROFILE, FINE PITCH			.8 mm	85 Cel	16MX16	16M	-25 Cel					BOTTOM	R-PBGA-B167		1.95 V	1.4 mm	10.5 mm	Not Qualified	BOTTOM	268435456 bit	1.7 V						NOR TYPE		14 mm		100 ns	1.8
K8C5715ETM-DE1F0	Samsung	FLASH	OTHER	167	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	16K,64K	55 mA	16777216 words	1.8	YES	1.8	16	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA167,12X15,32	Flash Memories	.8 mm	85 Cel	16MX16	16M	-25 Cel	4,255	YES	TIN SILVER COPPER	YES	BOTTOM	R-PBGA-B167	2	1.95 V	1.4 mm	10.5 mm	Not Qualified	TOP	268435456 bit	1.7 V	SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE		e1			NOR TYPE	.00002 Amp	14 mm	YES	100 ns	1.8	YES
K8C1015ETM-FE1F0	Samsung	FLASH	OTHER	167	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS			33554432 words	1.8			16	GRID ARRAY, LOW PROFILE, FINE PITCH			.8 mm	85 Cel	32MX16	32M	-25 Cel					BOTTOM	R-PBGA-B167		1.95 V	1.4 mm	10.5 mm	Not Qualified	TOP	536870912 bit	1.7 V	TOP BOOT BLOCK, SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE							14 mm		110 ns	1.8
K8C1115ETM-FE1F0	Samsung	FLASH	OTHER	167	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	16K,64K	70 mA	33554432 words	1.8	YES	1.8	16	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA167,12X15,32	Flash Memories	.8 mm	85 Cel	32MX16	32M	-25 Cel	4,511	YES		YES	BOTTOM	R-PBGA-B167	3	1.95 V	1.4 mm	10.5 mm	Not Qualified	TOP	536870912 bit	1.7 V	TOP BOOT BLOCK, SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE				240	NOR TYPE	.00002 Amp	14 mm	YES	110 ns	1.8	YES
K8C5715EBM-FC1D0	Samsung	FLASH	COMMERCIAL	167	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	16K,64K	55 mA	16777216 words	1.8	YES	1.8	16	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA167,12X15,32	Flash Memories	.8 mm	70 Cel	16MX16	16M	0 Cel	4,255	YES	TIN LEAD	YES	BOTTOM	R-PBGA-B167		1.95 V	1.4 mm	10.5 mm	Not Qualified	BOTTOM	268435456 bit	1.7 V	SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE		e0			NOR TYPE	.00002 Amp	14 mm	YES	100 ns	1.8	YES
K8C5615ETM-DE1C0	Samsung	FLASH	OTHER	167	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	16K,64K	55 mA	16777216 words	1.8	YES	1.8	16	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA167,12X15,32	Flash Memories	.8 mm	85 Cel	16MX16	16M	-25 Cel	4,255	YES	TIN SILVER COPPER	YES	BOTTOM	R-PBGA-B167	2	1.95 V	1.4 mm	10.5 mm	Not Qualified	TOP	268435456 bit	1.7 V	SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE		e1			NOR TYPE	.00002 Amp	14 mm	YES	100 ns	1.8	YES
K8C1315EBM-FE1F0	Samsung	FLASH	OTHER	167	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	16K,64K	70 mA	33554432 words	1.8	YES	1.8	16	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA167,12X15,32	Flash Memories	.8 mm	85 Cel	32MX16	32M	-25 Cel	4,511	YES	TIN LEAD	YES	BOTTOM	R-PBGA-B167	3	1.95 V	1.4 mm	10.5 mm	Not Qualified	BOTTOM	536870912 bit	1.7 V	SYNCHRONOUS BURST MODE OPERATION IS ALSO POSSIBLE		e0		240	NOR TYPE	.00002 Amp	14 mm	YES	110 ns	1.8	YES
K8C1215ETM-DC1F0	Samsung	FLASH	COMMERCIAL	167	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS			33554432 words	1.8			16	GRID ARRAY, LOW PROFILE, FINE PITCH			.8 mm	70 Cel	32MX16	32M	0 Cel			TIN SILVER COPPER		BOTTOM	R-PBGA-B167	2	1.95 V	1.4 mm	10.5 mm	Not Qualified	TOP	536870912 bit	1.7 V	SYNCHRONOUS BURST MODE OPERATION IS ALSO POSSIBLE		e1			NOR TYPE		14 mm		110 ns	1.8
K8C5715EBM-FC1C0	Samsung	FLASH	COMMERCIAL	167	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	16K,64K	55 mA	16777216 words	1.8	YES	1.8	16	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA167,12X15,32	Flash Memories	.8 mm	70 Cel	16MX16	16M	0 Cel	4,255	YES	TIN LEAD	YES	BOTTOM	R-PBGA-B167		1.95 V	1.4 mm	10.5 mm	Not Qualified	BOTTOM	268435456 bit	1.7 V	SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE		e0			NOR TYPE	.00002 Amp	14 mm	YES	100 ns	1.8	YES
K8C1115ETM-DC1E0	Samsung	FLASH	COMMERCIAL	167	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	16K,64K	70 mA	33554432 words	1.8	YES	1.8	16	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA167,12X15,32	Flash Memories	.8 mm	70 Cel	32MX16	32M	0 Cel	4,511	YES		YES	BOTTOM	R-PBGA-B167		1.95 V	1.4 mm	10.5 mm	Not Qualified	TOP	536870912 bit	1.7 V	TOP BOOT BLOCK, SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE			NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.00002 Amp	14 mm	YES	110 ns	1.8	YES
K8C1215ETM-FE1E0	Samsung	FLASH	OTHER	167	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS			33554432 words	1.8			16	GRID ARRAY, LOW PROFILE, FINE PITCH			.8 mm	85 Cel	32MX16	32M	-25 Cel			TIN LEAD		BOTTOM	R-PBGA-B167		1.95 V	1.4 mm	10.5 mm	Not Qualified	TOP	536870912 bit	1.7 V	SYNCHRONOUS BURST MODE OPERATION IS ALSO POSSIBLE		e0			NOR TYPE		14 mm		110 ns	1.8
K8C1015EBM-DE1D0	Samsung	FLASH	OTHER	167	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	16K,64K	70 mA	33554432 words	1.8	YES	1.8	16	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA167,12X15,32	Flash Memories	.8 mm	85 Cel	32MX16	32M	-25 Cel	4,511	YES		YES	BOTTOM	R-PBGA-B167	3	1.95 V	1.4 mm	10.5 mm	Not Qualified	BOTTOM	536870912 bit	1.7 V	BOTTOM BOOT BLOCK, SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE				260	NOR TYPE	.00002 Amp	14 mm	YES	110 ns	1.8	YES
K8C5415ETM-DC1F	Samsung	FLASH	COMMERCIAL	167	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS			16777216 words	1.8			16	GRID ARRAY, LOW PROFILE, FINE PITCH			.8 mm	70 Cel	16MX16	16M	0 Cel					BOTTOM	R-PBGA-B167		1.95 V	1.4 mm	10.5 mm	Not Qualified	TOP	268435456 bit	1.7 V						NOR TYPE		14 mm		100 ns	1.8
K8C1215ETM-DC1C0	Samsung	FLASH	COMMERCIAL	167	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	16K,64K	70 mA	33554432 words	1.8	YES	1.8	16	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA167,12X15,32	Flash Memories	.8 mm	70 Cel	32MX16	32M	0 Cel	4,511	YES	TIN SILVER COPPER	YES	BOTTOM	R-PBGA-B167	3	1.95 V	1.4 mm	10.5 mm	Not Qualified	TOP	536870912 bit	1.7 V	SYNCHRONOUS BURST MODE OPERATION IS ALSO POSSIBLE		e1		260	NOR TYPE	.00002 Amp	14 mm	YES	110 ns	1.8	YES
K8C1115ETM-DC1F0	Samsung	FLASH	COMMERCIAL	167	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	16K,64K	70 mA	33554432 words	1.8	YES	1.8	16	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA167,12X15,32	Flash Memories	.8 mm	70 Cel	32MX16	32M	0 Cel	4,511	YES		YES	BOTTOM	R-PBGA-B167		1.95 V	1.4 mm	10.5 mm	Not Qualified	TOP	536870912 bit	1.7 V	TOP BOOT BLOCK, SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE			NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.00002 Amp	14 mm	YES	110 ns	1.8	YES
K8C1015ETM-FE1C0	Samsung	FLASH	OTHER	167	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	16K,64K	70 mA	33554432 words	1.8	YES	1.8	16	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA167,12X15,32	Flash Memories	.8 mm	85 Cel	32MX16	32M	-25 Cel	4,511	YES		YES	BOTTOM	R-PBGA-B167	3	1.95 V	1.4 mm	10.5 mm	Not Qualified	TOP	536870912 bit	1.7 V	TOP BOOT BLOCK, SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE				240	NOR TYPE	.00002 Amp	14 mm	YES	110 ns	1.8	YES
K8C1315ETM-DE1F0	Samsung	FLASH	OTHER	167	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	16K,64K	70 mA	33554432 words	1.8	YES	1.8	16	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA167,12X15,32	Flash Memories	.8 mm	85 Cel	32MX16	32M	-25 Cel	4,511	YES	TIN SILVER COPPER	YES	BOTTOM	R-PBGA-B167	3	1.95 V	1.4 mm	10.5 mm	Not Qualified	TOP	536870912 bit	1.7 V	SYNCHRONOUS BURST MODE OPERATION IS ALSO POSSIBLE		e1		260	NOR TYPE	.00002 Amp	14 mm	YES	110 ns	1.8	YES
K8C1315EBM-DC1C0	Samsung	FLASH	COMMERCIAL	167	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS			33554432 words	1.8			16	GRID ARRAY, LOW PROFILE, FINE PITCH			.8 mm	70 Cel	32MX16	32M	0 Cel			TIN SILVER COPPER		BOTTOM	R-PBGA-B167	2	1.95 V	1.4 mm	10.5 mm	Not Qualified	BOTTOM	536870912 bit	1.7 V	SYNCHRONOUS BURST MODE OPERATION IS ALSO POSSIBLE		e1			NOR TYPE		14 mm		110 ns	1.8
K8C5715ETM-FC1F0	Samsung	FLASH	COMMERCIAL	167	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	16K,64K	55 mA	16777216 words	1.8	YES	1.8	16	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA167,12X15,32	Flash Memories	.8 mm	70 Cel	16MX16	16M	0 Cel	4,255	YES	TIN LEAD	YES	BOTTOM	R-PBGA-B167		1.95 V	1.4 mm	10.5 mm	Not Qualified	TOP	268435456 bit	1.7 V	SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE		e0			NOR TYPE	.00002 Amp	14 mm	YES	100 ns	1.8	YES
K8C5615ETM-DE1D0	Samsung	FLASH	OTHER	167	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	16K,64K	55 mA	16777216 words	1.8	YES	1.8	16	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA167,12X15,32	Flash Memories	.8 mm	85 Cel	16MX16	16M	-25 Cel	4,255	YES	TIN SILVER COPPER	YES	BOTTOM	R-PBGA-B167	2	1.95 V	1.4 mm	10.5 mm	Not Qualified	TOP	268435456 bit	1.7 V	SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE		e1			NOR TYPE	.00002 Amp	14 mm	YES	100 ns	1.8	YES
K8C5715EBM-DE1E0	Samsung	FLASH	OTHER	167	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	16K,64K	55 mA	16777216 words	1.8	YES	1.8	16	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA167,12X15,32	Flash Memories	.8 mm	85 Cel	16MX16	16M	-25 Cel	4,255	YES	TIN SILVER COPPER	YES	BOTTOM	R-PBGA-B167	2	1.95 V	1.4 mm	10.5 mm	Not Qualified	BOTTOM	268435456 bit	1.7 V	SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE		e1			NOR TYPE	.00002 Amp	14 mm	YES	100 ns	1.8	YES
K8C1215EBM-FE1C0	Samsung	FLASH	OTHER	167	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	16K,64K	70 mA	33554432 words	1.8	YES	1.8	16	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA167,12X15,32	Flash Memories	.8 mm	85 Cel	32MX16	32M	-25 Cel	4,511	YES	TIN LEAD	YES	BOTTOM	R-PBGA-B167	3	1.95 V	1.4 mm	10.5 mm	Not Qualified	BOTTOM	536870912 bit	1.7 V	SYNCHRONOUS BURST MODE OPERATION IS ALSO POSSIBLE		e0		240	NOR TYPE	.00002 Amp	14 mm	YES	110 ns	1.8	YES
K8C5615ETM-FC1D0	Samsung	FLASH	COMMERCIAL	167	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	16K,64K	55 mA	16777216 words	1.8	YES	1.8	16	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA167,12X15,32	Flash Memories	.8 mm	70 Cel	16MX16	16M	0 Cel	4,255	YES	TIN LEAD	YES	BOTTOM	R-PBGA-B167		1.95 V	1.4 mm	10.5 mm	Not Qualified	TOP	268435456 bit	1.7 V	SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE		e0			NOR TYPE	.00002 Amp	14 mm	YES	100 ns	1.8	YES
K8C1215EBM-DC1D0	Samsung	FLASH	COMMERCIAL	167	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	16K,64K	70 mA	33554432 words	1.8	YES	1.8	16	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA167,12X15,32	Flash Memories	.8 mm	70 Cel	32MX16	32M	0 Cel	4,511	YES	TIN SILVER COPPER	YES	BOTTOM	R-PBGA-B167	3	1.95 V	1.4 mm	10.5 mm	Not Qualified	BOTTOM	536870912 bit	1.7 V	SYNCHRONOUS BURST MODE OPERATION IS ALSO POSSIBLE		e1		260	NOR TYPE	.00002 Amp	14 mm	YES	110 ns	1.8	YES
K8C1315ETM-FE1D0	Samsung	FLASH	OTHER	167	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS			33554432 words	1.8			16	GRID ARRAY, LOW PROFILE, FINE PITCH			.8 mm	85 Cel	32MX16	32M	-25 Cel			TIN LEAD		BOTTOM	R-PBGA-B167		1.95 V	1.4 mm	10.5 mm	Not Qualified	TOP	536870912 bit	1.7 V	SYNCHRONOUS BURST MODE OPERATION IS ALSO POSSIBLE		e0			NOR TYPE		14 mm		110 ns	1.8
K8C5415EBM-DC1F	Samsung	FLASH	COMMERCIAL	167	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS			16777216 words	1.8			16	GRID ARRAY, LOW PROFILE, FINE PITCH			.8 mm	70 Cel	16MX16	16M	0 Cel					BOTTOM	R-PBGA-B167		1.95 V	1.4 mm	10.5 mm	Not Qualified	BOTTOM	268435456 bit	1.7 V						NOR TYPE		14 mm		100 ns	1.8
K8C1215ETM-DE1C0	Samsung	FLASH	OTHER	167	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	16K,64K	70 mA	33554432 words	1.8	YES	1.8	16	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA167,12X15,32	Flash Memories	.8 mm	85 Cel	32MX16	32M	-25 Cel	4,511	YES	TIN SILVER COPPER	YES	BOTTOM	R-PBGA-B167	3	1.95 V	1.4 mm	10.5 mm	Not Qualified	TOP	536870912 bit	1.7 V	SYNCHRONOUS BURST MODE OPERATION IS ALSO POSSIBLE		e1		260	NOR TYPE	.00002 Amp	14 mm	YES	110 ns	1.8	YES
K8C1215ETM-FC1C0	Samsung	FLASH	COMMERCIAL	167	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	16K,64K	70 mA	33554432 words	1.8	YES	1.8	16	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA167,12X15,32	Flash Memories	.8 mm	70 Cel	32MX16	32M	0 Cel	4,511	YES	TIN LEAD	YES	BOTTOM	R-PBGA-B167	3	1.95 V	1.4 mm	10.5 mm	Not Qualified	TOP	536870912 bit	1.7 V	SYNCHRONOUS BURST MODE OPERATION IS ALSO POSSIBLE		e0		240	NOR TYPE	.00002 Amp	14 mm	YES	110 ns	1.8	YES
K8C5615EBM-FC1D0	Samsung	FLASH	COMMERCIAL	167	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	16K,64K	55 mA	16777216 words	1.8	YES	1.8	16	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA167,12X15,32	Flash Memories	.8 mm	70 Cel	16MX16	16M	0 Cel	4,255	YES	TIN LEAD	YES	BOTTOM	R-PBGA-B167		1.95 V	1.4 mm	10.5 mm	Not Qualified	BOTTOM	268435456 bit	1.7 V	SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE		e0			NOR TYPE	.00002 Amp	14 mm	YES	100 ns	1.8	YES
K8C1115EBM-FC1F0	Samsung	FLASH	COMMERCIAL	167	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	16K,64K	70 mA	33554432 words	1.8	YES	1.8	16	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA167,12X15,32	Flash Memories	.8 mm	70 Cel	32MX16	32M	0 Cel	4,511	YES		YES	BOTTOM	R-PBGA-B167	3	1.95 V	1.4 mm	10.5 mm	Not Qualified	BOTTOM	536870912 bit	1.7 V	BOTTOM BOOT BLOCK, SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE				240	NOR TYPE	.00002 Amp	14 mm	YES	110 ns	1.8	YES
K8C1115EBM-DE1E0	Samsung	FLASH	OTHER	167	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	16K,64K	70 mA	33554432 words	1.8	YES	1.8	16	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA167,12X15,32	Flash Memories	.8 mm	85 Cel	32MX16	32M	-25 Cel	4,511	YES		YES	BOTTOM	R-PBGA-B167		1.95 V	1.4 mm	10.5 mm	Not Qualified	BOTTOM	536870912 bit	1.7 V	BOTTOM BOOT BLOCK, SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE			NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.00002 Amp	14 mm	YES	110 ns	1.8	YES
K8C1015ETM-DC1F0	Samsung	FLASH	COMMERCIAL	167	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS			33554432 words	1.8			16	GRID ARRAY, LOW PROFILE, FINE PITCH			.8 mm	70 Cel	32MX16	32M	0 Cel					BOTTOM	R-PBGA-B167		1.95 V	1.4 mm	10.5 mm	Not Qualified	TOP	536870912 bit	1.7 V	TOP BOOT BLOCK, SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE							14 mm		110 ns	1.8

Flash Memory

Flash memory is a type of non-volatile computer memory that is commonly used in digital devices such as USB drives, solid-state drives, and digital cameras. It is a type of EEPROM (Electrically Erasable Programmable Read-Only Memory) that allows data to be erased and reprogrammed in blocks instead of one byte at a time. Flash memory uses a floating gate transistor to store data, which allows it to retain information even when the power is turned off.

Flash memory is widely used in digital devices because of its high capacity, small size, and fast access times. It is also more durable than other types of memory, such as hard disk drives, because it has no moving parts. This makes it ideal for use in portable devices that may be subject to physical shock or vibration.

There are two types of flash memory: NOR flash and NAND flash. NOR flash is faster than NAND flash, but it has lower density and higher cost per bit. NOR flash is typically used for code storage, such as firmware or boot code, because it provides faster access times. NAND flash has higher density and lower cost per bit, which makes it ideal for data storage applications.

Flash memory has a limited lifespan, as it can only be erased and reprogrammed a limited number of times. This is because the process of erasing and reprogramming the memory causes wear and tear on the floating gate transistor. However, modern flash memory devices have a sophisticated wear-leveling algorithm that distributes writes evenly across the memory, which extends the lifespan of the device.