LFBGA Flash Memory 692

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Terminal Form	Parallel or Serial	Operating Mode	Sector Size (Words)	Maximum Supply Current	No. of Words	Nominal Supply Voltage / Vsup (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Alternate Memory Width	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	No. of Sectors/Size	Command User Interface	Terminal Finish	Ready or Busy	Terminal Position	Write Protection	JESD-30 Code	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Maximum Clock Frequency (fCLK)	Width	Qualification	Boot Block	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	Page Size (words)	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Type	Maximum Standby Current	Length	Maximum Access Time	Programming Voltage (V)
MT28F800B3FB-12TET	Micron Technology	FLASH	INDUSTRIAL	48	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS			1048576 words		8	GRID ARRAY, LOW PROFILE, FINE PITCH		16	.8 mm	85 Cel		1MX8	1M	-40 Cel			TIN SILVER COPPER		BOTTOM		R-PBGA-B48	3.6 V	1.4 mm			Not Qualified	TOP	8388608 bit	2.7 V	TOP BOOT BLOCK		e1			NOR TYPE			120 ns	2.7
MT29F16G16ADACAH4-IT	Micron Technology	FLASH	INDUSTRIAL	63	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	128K	35 mA	1073741824 words	3.3	16	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA63,10X12,32		.8 mm	85 Cel	3-STATE	1GX16	1G	-40 Cel	8K	YES		YES	BOTTOM		R-PBGA-B63	3.6 V	1.25 mm		9 mm			17179869184 bit	2.7 V		2K				SLC NAND TYPE	.0001 Amp	11 mm		3.3
MT29F16G16ADBCAH4-IT	Micron Technology	FLASH	INDUSTRIAL	63	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	128K	20 mA	1073741824 words	1.8	16	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA63,10X12,32		.8 mm	85 Cel	3-STATE	1GX16	1G	-40 Cel	8K	YES		YES	BOTTOM		R-PBGA-B63	1.95 V	1.25 mm		9 mm			17179869184 bit	1.7 V		2K				SLC NAND TYPE	.00005 Amp	11 mm		1.8
MTFC8GLWDM-AITZ	Micron Technology	FLASH CARD	INDUSTRIAL	153	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS			8589934592 words		8	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA153,14X14,20		.5 mm	85 Cel		8GX8	8G	-40 Cel					BOTTOM		R-PBGA-B153	3.6 V	1.364 mm	52 MHz	11.5 mm			68719476736 bit	2.7 V				NOT SPECIFIED	NOT SPECIFIED	NAND TYPE		13 mm
MT29F8G16ABACAH4	Micron Technology	FLASH	COMMERCIAL	63	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	128K	35 mA	536870912 words	3.3	16	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA63,10X12,32		.8 mm	70 Cel	3-STATE	512MX16	512M	0 Cel	4K	YES		YES	BOTTOM		R-PBGA-B63	3.6 V	1.25 mm		9 mm			8589934592 bit	2.7 V		2K				SLC NAND TYPE	.0001 Amp	11 mm		3.3
MT28F160A3MB-9B	Micron Technology	FLASH	INDUSTRIAL	48	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS			1048576 words	3.3	16	GRID ARRAY, LOW PROFILE, FINE PITCH			.8 mm	85 Cel	3-STATE	1MX16	1M	-40 Cel					BOTTOM		R-PBGA-B48	3.6 V	1.4 mm		7 mm	Not Qualified	BOTTOM	16777216 bit	2.7 V	USER SELECTABLE 2.7V TO 3.6V OR 12V VPP					NOR TYPE		12 mm	90 ns	3
MTFC8GLWDM-AITA	Micron Technology	FLASH CARD	INDUSTRIAL	153	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS			8589934592 words		8	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA153,14X14,20		.5 mm	85 Cel		8GX8	8G	-40 Cel					BOTTOM		R-PBGA-B153	3.6 V	1.364 mm	52 MHz	11.5 mm			68719476736 bit	2.7 V				NOT SPECIFIED	NOT SPECIFIED	NAND TYPE		13 mm
NAND16GW3B6DPA6F	Micron Technology	FLASH	INDUSTRIAL	114	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS			4294967296 words	3	4	GRID ARRAY, LOW PROFILE, FINE PITCH			.65 mm	85 Cel		4GX4	4G	-40 Cel					BOTTOM		R-PBGA-B114	3.6 V	1.4 mm		12 mm	Not Qualified		17179869184 bit	2.7 V						SLC NAND TYPE		16 mm	25 ns	3
MT28F800B3FB-12B	Micron Technology	FLASH	COMMERCIAL	48	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS			1048576 words	3.3	8	GRID ARRAY, LOW PROFILE, FINE PITCH		16	.8 mm	70 Cel		1MX8	1M	0 Cel			TIN SILVER COPPER		BOTTOM		R-PBGA-B48	3.6 V	1.4 mm			Not Qualified	BOTTOM	8388608 bit	3 V	BOTTOM BOOT BLOCK		e1			NOR TYPE			120 ns	2.7
MT28F160A3MB-15B	Micron Technology	FLASH	INDUSTRIAL	48	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS			1048576 words	3.3	16	GRID ARRAY, LOW PROFILE, FINE PITCH			.8 mm	85 Cel	3-STATE	1MX16	1M	-40 Cel					BOTTOM		R-PBGA-B48	3.6 V	1.4 mm		7 mm	Not Qualified	BOTTOM	16777216 bit	2.7 V	USER SELECTABLE 2.7V TO 3.6V OR 12V VPP					NOR TYPE		12 mm	150 ns	3
MT28F800A3MB-15T	Micron Technology	FLASH	INDUSTRIAL	48	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS			524288 words	3.3	16	GRID ARRAY, LOW PROFILE, FINE PITCH			.8 mm	85 Cel	3-STATE	512KX16	512K	-40 Cel					BOTTOM		R-PBGA-B48	3.6 V	1.4 mm		7 mm	Not Qualified	TOP	8388608 bit	2.7 V	USER SELECTABLE 2.7V TO 3.6V OR 12V VPP					NOR TYPE		12 mm	150 ns	3
NAND64GAH0PZA5F	Micron Technology	FLASH	OTHER	169	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS			8589934592 words	3.3	8	GRID ARRAY, LOW PROFILE, FINE PITCH			.5 mm	85 Cel		8GX8	8G	-25 Cel			Tin/Silver/Copper (Sn/Ag/Cu)		BOTTOM		R-PBGA-B169	3.465 V	1.4 mm		12 mm	Not Qualified		68719476736 bit	3.135 V			e1	30	245			16 mm		3.3
MT28F800B3FB-12TVET	Micron Technology	FLASH	INDUSTRIAL	48	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS			1048576 words		8	GRID ARRAY, LOW PROFILE, FINE PITCH		16	.8 mm	85 Cel		1MX8	1M	-40 Cel			TIN SILVER COPPER		BOTTOM		R-PBGA-B48	3.6 V	1.4 mm			Not Qualified	TOP	8388608 bit	2.7 V	TOP BOOT BLOCK		e1			NOR TYPE			120 ns	3
MT28F800A3MB-9T	Micron Technology	FLASH	INDUSTRIAL	48	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS			524288 words	3.3	16	GRID ARRAY, LOW PROFILE, FINE PITCH			.8 mm	85 Cel	3-STATE	512KX16	512K	-40 Cel					BOTTOM		R-PBGA-B48	3.6 V	1.4 mm		7 mm	Not Qualified	TOP	8388608 bit	2.7 V	USER SELECTABLE 2.7V TO 3.6V OR 12V VPP					NOR TYPE		12 mm	90 ns	3
MT28F800B3FB-10BET	Micron Technology	FLASH	INDUSTRIAL	48	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS			1048576 words	3.3	8	GRID ARRAY, LOW PROFILE, FINE PITCH		16	.8 mm	85 Cel		1MX8	1M	-40 Cel			TIN SILVER COPPER		BOTTOM		R-PBGA-B48	3.6 V	1.4 mm		7 mm	Not Qualified	BOTTOM	8388608 bit	3 V	BOTTOM BOOT BLOCK		e1			NOR TYPE		12 mm	100 ns	3
MT29F2T08CVCBBG6-6R:B	Micron Technology	FLASH	COMMERCIAL	272	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS			274877906944 words	3.3	8	GRID ARRAY, LOW PROFILE, FINE PITCH			.8 mm	70 Cel		256GX8	256G	0 Cel					BOTTOM		R-PBGA-B272	3.6 V	1.5 mm		14 mm			2199023255552 bit	2.7 V						MLC NAND TYPE		18 mm		2.7
NAND16GW3B6DPA6E	Micron Technology	FLASH	INDUSTRIAL	114	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS			2147483648 words	3	8	GRID ARRAY, LOW PROFILE, FINE PITCH			.65 mm	85 Cel		2GX8	2G	-40 Cel					BOTTOM		R-PBGA-B114	3.6 V	1.4 mm		12 mm	Not Qualified		17179869184 bit	2.7 V						SLC NAND TYPE		16 mm		3
MTFC16GLWDM-4MAITZ	Micron Technology	FLASH CARD	INDUSTRIAL	153	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS			17179869184 words		8	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA153,14X14,20		.5 mm	85 Cel		16GX8	16G	-40 Cel					BOTTOM		R-PBGA-B153	3.6 V	1.364 mm	52 MHz	11.5 mm			137438953742 bit	2.7 V				NOT SPECIFIED	NOT SPECIFIED	NAND TYPE		13 mm
MT28F160A3MB-11B	Micron Technology	FLASH	INDUSTRIAL	48	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS			1048576 words	3.3	16	GRID ARRAY, LOW PROFILE, FINE PITCH			.8 mm	85 Cel	3-STATE	1MX16	1M	-40 Cel					BOTTOM		R-PBGA-B48	3.6 V	1.4 mm		7 mm	Not Qualified	BOTTOM	16777216 bit	2.7 V	USER SELECTABLE 2.7V TO 3.6V OR 12V VPP					NOR TYPE		12 mm	110 ns	3
MTFC32GJXED-WT	Micron Technology	Embedded MMC		169	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL		SYNCHRONOUS		80 mA	34359738368 words	1.8	8	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA169,14X28,20		.5 mm	85 Cel	OPEN-DRAIN	32GX8	32G	-25 Cel					BOTTOM	HARDWARE	R-PBGA-B169	1.95 V	1.4 mm	52 MHz	14 mm			274877906944 bit	1.65 V						NAND TYPE		18 mm		1.8

Flash Memory

Flash memory is a type of non-volatile computer memory that is commonly used in digital devices such as USB drives, solid-state drives, and digital cameras. It is a type of EEPROM (Electrically Erasable Programmable Read-Only Memory) that allows data to be erased and reprogrammed in blocks instead of one byte at a time. Flash memory uses a floating gate transistor to store data, which allows it to retain information even when the power is turned off.

Flash memory is widely used in digital devices because of its high capacity, small size, and fast access times. It is also more durable than other types of memory, such as hard disk drives, because it has no moving parts. This makes it ideal for use in portable devices that may be subject to physical shock or vibration.

There are two types of flash memory: NOR flash and NAND flash. NOR flash is faster than NAND flash, but it has lower density and higher cost per bit. NOR flash is typically used for code storage, such as firmware or boot code, because it provides faster access times. NAND flash has higher density and lower cost per bit, which makes it ideal for data storage applications.

Flash memory has a limited lifespan, as it can only be erased and reprogrammed a limited number of times. This is because the process of erasing and reprogramming the memory causes wear and tear on the floating gate transistor. However, modern flash memory devices have a sophisticated wear-leveling algorithm that distributes writes evenly across the memory, which extends the lifespan of the device.