LFBGA Flash Memory 692

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Terminal Form	Parallel or Serial	Operating Mode	Sector Size (Words)	Maximum Supply Current	No. of Words	Nominal Supply Voltage / Vsup (V)	Toggle Bit	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Alternate Memory Width	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	No. of Sectors/Size	Command User Interface	Terminal Finish	Ready or Busy	Terminal Position	JESD-30 Code	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Maximum Clock Frequency (fCLK)	Width	Qualification	Boot Block	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	Page Size (words)	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Type	Maximum Standby Current	Length	Common Flash Interface	Maximum Access Time	Programming Voltage (V)	Data Polling
K8C5615EBM-FC1F0	Samsung	FLASH	COMMERCIAL	167	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	16K,64K	55 mA	16777216 words	1.8	YES	1.8	16	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA167,12X15,32		Flash Memories	.8 mm	70 Cel		16MX16	16M	0 Cel	4,255	YES	TIN LEAD	YES	BOTTOM	R-PBGA-B167	1.95 V	1.4 mm		10.5 mm	Not Qualified	BOTTOM	268435456 bit	1.7 V	SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE		e0			NOR TYPE	.00002 Amp	14 mm	YES	100 ns	1.8	YES
K8C1115ETM-FE1C0	Samsung	FLASH	OTHER	167	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS			33554432 words	1.8			16	GRID ARRAY, LOW PROFILE, FINE PITCH				.8 mm	85 Cel		32MX16	32M	-25 Cel					BOTTOM	R-PBGA-B167	1.95 V	1.4 mm		10.5 mm	Not Qualified	TOP	536870912 bit	1.7 V	TOP BOOT BLOCK, SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE							14 mm		110 ns	1.8
K8C5715ETM-FC1E0	Samsung	FLASH	COMMERCIAL	167	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	16K,64K	55 mA	16777216 words	1.8	YES	1.8	16	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA167,12X15,32		Flash Memories	.8 mm	70 Cel		16MX16	16M	0 Cel	4,255	YES	TIN LEAD	YES	BOTTOM	R-PBGA-B167	1.95 V	1.4 mm		10.5 mm	Not Qualified	TOP	268435456 bit	1.7 V	SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE		e0			NOR TYPE	.00002 Amp	14 mm	YES	100 ns	1.8	YES
NAND64GAH0PZA5E	Micron Technology	FLASH	OTHER	169	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS			8589934592 words	3.3			8	GRID ARRAY, LOW PROFILE, FINE PITCH				.5 mm	85 Cel		8GX8	8G	-25 Cel			Tin/Silver/Copper (Sn/Ag/Cu)		BOTTOM	R-PBGA-B169	3.465 V	1.4 mm		12 mm	Not Qualified		68719476736 bit	3.135 V			e1	30	245			16 mm			3.3
MT29F8G08ABBCAH4-IT	Micron Technology	FLASH	INDUSTRIAL	63	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	256K	20 mA	1073741824 words	1.8			8	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA63,10X12,32			.8 mm	85 Cel	3-STATE	1GX8	1G	-40 Cel	4K	YES	TIN SILVER COPPER	YES	BOTTOM	R-PBGA-B63	1.95 V	1.25 mm		9 mm			8589934592 bit	1.7 V		4K	e1	30	260	SLC NAND TYPE	.00005 Amp	11 mm			1.8
NAND16GAH0PZA5F	Micron Technology	FLASH	OTHER	169	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS			2147483648 words	3.3			8	GRID ARRAY, LOW PROFILE, FINE PITCH				.5 mm	85 Cel		2GX8	2G	-25 Cel			Tin/Silver/Copper (Sn/Ag/Cu)		BOTTOM	R-PBGA-B169	3.465 V	1.4 mm		12 mm	Not Qualified		17179869184 bit	3.135 V			e1	30	245			16 mm			3.3
MT28F800B1MB-12BVET	Micron Technology	FLASH	OTHER	48	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS			524288 words				16	GRID ARRAY, LOW PROFILE, FINE PITCH				.8 mm	85 Cel		512KX16	512K	-25 Cel					BOTTOM	R-PBGA-B48	3.6 V	1.4 mm		7 mm	Not Qualified	BOTTOM	8388608 bit	2.7 V	BOTTOM BOOT BLOCK					NOR TYPE		12 mm		120 ns	5
MTFC32GJGEF-AITZ	Micron Technology	FLASH CARD	INDUSTRIAL	169	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS			34359738368 words				8	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA169,14X14,20			.5 mm	85 Cel		32GX8	32G	-40 Cel					BOTTOM	R-PBGA-B169	3.6 V	1.364 mm	52 MHz	14 mm			274877906944 bit	2.7 V				NOT SPECIFIED	NOT SPECIFIED	NAND TYPE		18 mm
MTFC8GLWDM-3MAITZ	Micron Technology	FLASH CARD	INDUSTRIAL	153	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS			8589934592 words				8	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA153,14X14,20			.5 mm	85 Cel		8GX8	8G	-40 Cel					BOTTOM	R-PBGA-B153	3.6 V	1.364 mm	52 MHz	11.5 mm			68719476736 bit	2.7 V				NOT SPECIFIED	NOT SPECIFIED	NAND TYPE		13 mm
MT29F2G08ABAEAH4-AITX	Micron Technology	FLASH	INDUSTRIAL	63	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	128K	35 mA	268435456 words	3.3			8	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA63,10X12,32			.8 mm	85 Cel		256MX8	256M	-40 Cel	2K	YES		YES	BOTTOM	R-PBGA-B63	3.6 V	1.25 mm		9 mm			2147483648 bit	2.7 V		2K		NOT SPECIFIED	NOT SPECIFIED	SLC NAND TYPE	.0001 Amp	11 mm		20 ns	3.3
MT29F8G16ABACAH4-IT	Micron Technology	FLASH	INDUSTRIAL	63	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	128K	35 mA	536870912 words	3.3			16	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA63,10X12,32			.8 mm	85 Cel	3-STATE	512MX16	512M	-40 Cel	4K	YES		YES	BOTTOM	R-PBGA-B63	3.6 V	1.25 mm		9 mm			8589934592 bit	2.7 V		2K				SLC NAND TYPE	.0001 Amp	11 mm			3.3
NAND32GAH0PZA5E	Micron Technology	FLASH	OTHER	169	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS			4294967296 words	3.3			8	GRID ARRAY, LOW PROFILE, FINE PITCH				.5 mm	85 Cel		4GX8	4G	-25 Cel			Tin/Silver/Copper (Sn/Ag/Cu)		BOTTOM	R-PBGA-B169	3.465 V	1.4 mm		12 mm	Not Qualified		34359738368 bit	3.135 V			e1	30	245			16 mm			3.3
MT29F16G16ADBCAH4	Micron Technology	FLASH	COMMERCIAL	63	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	128K	20 mA	1073741824 words	1.8			16	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA63,10X12,32			.8 mm	70 Cel	3-STATE	1GX16	1G	0 Cel	8K	YES		YES	BOTTOM	R-PBGA-B63	1.95 V	1.25 mm		9 mm			17179869184 bit	1.7 V		2K				SLC NAND TYPE	.00005 Amp	11 mm			1.8
MT29F2G16ABBEAHC	Micron Technology	FLASH	COMMERCIAL	63	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	64K	35 mA	134217728 words	1.8			16	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA63,10X12,32			.8 mm	70 Cel		128MX16	128M	0 Cel	2K	YES		YES	BOTTOM	R-PBGA-B63	1.95 V	1.25 mm		10.5 mm			2147483648 bit	1.7 V		1K				SLC NAND TYPE	.0001 Amp	13 mm		25 ns	1.8
MT28F800A3MB-11B	Micron Technology	FLASH	INDUSTRIAL	48	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS			524288 words	3.3			16	GRID ARRAY, LOW PROFILE, FINE PITCH				.8 mm	85 Cel	3-STATE	512KX16	512K	-40 Cel					BOTTOM	R-PBGA-B48	3.6 V	1.4 mm		7 mm	Not Qualified	BOTTOM	8388608 bit	2.7 V	USER SELECTABLE 2.7V TO 3.6V OR 12V VPP					NOR TYPE		12 mm		110 ns	3
MT29F16G08ADACAH4-IT	Micron Technology	FLASH	INDUSTRIAL	63	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	128K	35 mA	2147483648 words	3.3			8	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA63,10X12,32			.8 mm	85 Cel	3-STATE	2GX8	2G	-40 Cel	8K	YES		YES	BOTTOM	R-PBGA-B63	3.6 V	1.25 mm		9 mm			17179869184 bit	2.7 V		4K				SLC NAND TYPE	.0001 Amp	11 mm			3.3
MT29F2G16ABBEAHC-IT	Micron Technology	FLASH	INDUSTRIAL	63	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	64K	35 mA	134217728 words	1.8			16	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA63,10X12,32			.8 mm	85 Cel		128MX16	128M	-40 Cel	2K	YES		YES	BOTTOM	R-PBGA-B63	1.95 V	1.25 mm		10.5 mm			2147483648 bit	1.7 V		1K				SLC NAND TYPE	.0001 Amp	13 mm		25 ns	1.8
MTFC64GAJAEDN-AIT	Micron Technology	FLASH CARD	INDUSTRIAL	169	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS			68719476736 words		NO		8	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA169,14X28,20			.5 mm	85 Cel		64GX8	64G	-40 Cel		NO		YES	BOTTOM	R-PBGA-B169	3.6 V	1.4 mm	52 MHz	14 mm			549755813888 bit	2.7 V				NOT SPECIFIED	NOT SPECIFIED	NAND TYPE		18 mm			2.7	NO
MT28F800B3FB-10T	Micron Technology	FLASH	COMMERCIAL	48	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS			1048576 words	3.3			8	GRID ARRAY, LOW PROFILE, FINE PITCH		16		.8 mm	70 Cel		1MX8	1M	0 Cel			TIN SILVER COPPER		BOTTOM	R-PBGA-B48	3.6 V	1.4 mm		7 mm	Not Qualified	TOP	8388608 bit	3 V	TOP BOOT BLOCK		e1			NOR TYPE		12 mm		100 ns	3
MT29F8G16ABBCAH4	Micron Technology	FLASH	COMMERCIAL	63	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	128K	20 mA	536870912 words	1.8			16	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA63,10X12,32			.8 mm	70 Cel	3-STATE	512MX16	512M	0 Cel	4K	YES		YES	BOTTOM	R-PBGA-B63	1.95 V	1.25 mm		9 mm			8589934592 bit	1.7 V		2K				SLC NAND TYPE	.00005 Amp	11 mm			1.8
MT29F2G08ABBEAH4-ITX	Micron Technology	FLASH	INDUSTRIAL	63	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	128K	35 mA	268435456 words	1.8			8	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA63,10X12,32			.8 mm	85 Cel		256MX8	256M	-40 Cel	2K	YES		YES	BOTTOM	R-PBGA-B63	1.95 V	1.25 mm		9 mm			2147483648 bit	1.7 V		2K		NOT SPECIFIED	NOT SPECIFIED	SLC NAND TYPE	.0001 Amp	11 mm		25 ns	1.8
NAND32GAH0PZA5F	Micron Technology	FLASH	OTHER	169	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS			4294967296 words	3.3			8	GRID ARRAY, LOW PROFILE, FINE PITCH				.5 mm	85 Cel		4GX8	4G	-25 Cel			Tin/Silver/Copper (Sn/Ag/Cu)		BOTTOM	R-PBGA-B169	3.465 V	1.4 mm		12 mm	Not Qualified		34359738368 bit	3.135 V			e1	30	245			16 mm			3.3
MT28F800B1FB-10TVET	Micron Technology	FLASH	INDUSTRIAL	48	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS			1048576 words	3.3			8	GRID ARRAY, LOW PROFILE, FINE PITCH				.8 mm	85 Cel		1MX8	1M	-40 Cel			TIN SILVER COPPER		BOTTOM	R-PBGA-B48	3.6 V	1.4 mm		7 mm	Not Qualified	TOP	8388608 bit	3 V	AUTOMATIC WRITE; TOP BOOT BLOCK		e1			NOR TYPE		12 mm		100 ns	5
MT28F800B3FB-10B	Micron Technology	FLASH	COMMERCIAL	48	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS			1048576 words	3.3			8	GRID ARRAY, LOW PROFILE, FINE PITCH		16		.8 mm	70 Cel		1MX8	1M	0 Cel			TIN SILVER COPPER		BOTTOM	R-PBGA-B48	3.6 V	1.4 mm		7 mm	Not Qualified	BOTTOM	8388608 bit	3 V	BOTTOM BOOT BLOCK		e1			NOR TYPE		12 mm		100 ns	3
MT28F160A3MB-11T	Micron Technology	FLASH	INDUSTRIAL	48	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS			1048576 words	3.3			16	GRID ARRAY, LOW PROFILE, FINE PITCH				.8 mm	85 Cel	3-STATE	1MX16	1M	-40 Cel					BOTTOM	R-PBGA-B48	3.6 V	1.4 mm		7 mm	Not Qualified	TOP	16777216 bit	2.7 V	USER SELECTABLE 2.7V TO 3.6V OR 12V VPP					NOR TYPE		12 mm		110 ns	3
MTFC4GMWDM-3MAITA	Micron Technology	FLASH CARD	INDUSTRIAL	153	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS			4294967296 words				8	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA153,14X14,20			.5 mm	85 Cel		4GX8	4G	-40 Cel					BOTTOM	R-PBGA-B153	3.6 V	1.364 mm	52 MHz	11.5 mm			34359738368 bit	2.7 V						NAND TYPE		13 mm
MT29F8G08ABBCAH4	Micron Technology	FLASH	COMMERCIAL	63	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	256K	20 mA	1073741824 words	1.8			8	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA63,10X12,32			.8 mm	70 Cel	3-STATE	1GX8	1G	0 Cel	4K	YES		YES	BOTTOM	R-PBGA-B63	1.95 V	1.25 mm		9 mm			8589934592 bit	1.7 V		4K				SLC NAND TYPE	.00005 Amp	11 mm			1.8
MT29F2G08ABBEAHC-IT	Micron Technology	FLASH	INDUSTRIAL	63	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	128K	35 mA	268435456 words	1.8			8	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA63,10X12,32			.8 mm	85 Cel		256MX8	256M	-40 Cel	2K	YES		YES	BOTTOM	R-PBGA-B63	1.95 V	1.25 mm		10.5 mm			2147483648 bit	1.7 V		2K		NOT SPECIFIED	NOT SPECIFIED	SLC NAND TYPE	.0001 Amp	13 mm		25 ns	1.8
MT28F800B3FB-12T	Micron Technology	FLASH	COMMERCIAL	48	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS			1048576 words	3.3			8	GRID ARRAY, LOW PROFILE, FINE PITCH		16		.8 mm	70 Cel		1MX8	1M	0 Cel			TIN SILVER COPPER		BOTTOM	R-PBGA-B48	3.6 V	1.4 mm			Not Qualified	TOP	8388608 bit	3 V	TOP BOOT BLOCK		e1			NOR TYPE				120 ns	2.7
NAND16GAH0PZA5E	Micron Technology	FLASH	OTHER	169	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS			2147483648 words	3.3			8	GRID ARRAY, LOW PROFILE, FINE PITCH				.5 mm	85 Cel		2GX8	2G	-25 Cel			Tin/Silver/Copper (Sn/Ag/Cu)		BOTTOM	R-PBGA-B169	3.465 V	1.4 mm		12 mm	Not Qualified		17179869184 bit	3.135 V			e1	30	245			16 mm			3.3
MT28F800B3FB-12BET	Micron Technology	FLASH	INDUSTRIAL	48	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS			1048576 words				8	GRID ARRAY, LOW PROFILE, FINE PITCH		16		.8 mm	85 Cel		1MX8	1M	-40 Cel			TIN SILVER COPPER		BOTTOM	R-PBGA-B48	3.6 V	1.4 mm			Not Qualified	BOTTOM	8388608 bit	2.7 V	BOTTOM BOOT BLOCK		e1			NOR TYPE				120 ns	2.7
MT29F16G08ADACAH4	Micron Technology	FLASH	COMMERCIAL	63	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	128K	35 mA	2147483648 words	3.3			8	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA63,10X12,32			.8 mm	70 Cel	3-STATE	2GX8	2G	0 Cel	8K	YES		YES	BOTTOM	R-PBGA-B63	3.6 V	1.25 mm		9 mm			17179869184 bit	2.7 V		4K				SLC NAND TYPE	.0001 Amp	11 mm			3.3
MT28F800B3FB-12BVET	Micron Technology	FLASH	INDUSTRIAL	48	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS			1048576 words				8	GRID ARRAY, LOW PROFILE, FINE PITCH		16		.8 mm	85 Cel		1MX8	1M	-40 Cel			TIN SILVER COPPER		BOTTOM	R-PBGA-B48	3.6 V	1.4 mm			Not Qualified	BOTTOM	8388608 bit	2.7 V	BOTTOM BOOT BLOCK		e1			NOR TYPE				120 ns	3
MT29F8G16ABBCAH4-IT	Micron Technology	FLASH	INDUSTRIAL	63	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	128K	20 mA	536870912 words	1.8			16	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA63,10X12,32			.8 mm	85 Cel	3-STATE	512MX16	512M	-40 Cel	4K	YES		YES	BOTTOM	R-PBGA-B63	1.95 V	1.25 mm		9 mm			8589934592 bit	1.7 V		2K				SLC NAND TYPE	.00005 Amp	11 mm			1.8
MT28F800A3MB-15B	Micron Technology	FLASH	INDUSTRIAL	48	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS			524288 words	3.3			16	GRID ARRAY, LOW PROFILE, FINE PITCH				.8 mm	85 Cel	3-STATE	512KX16	512K	-40 Cel					BOTTOM	R-PBGA-B48	3.6 V	1.4 mm		7 mm	Not Qualified	BOTTOM	8388608 bit	2.7 V	USER SELECTABLE 2.7V TO 3.6V OR 12V VPP					NOR TYPE		12 mm		150 ns	3
MT28F160A3MB-9T	Micron Technology	FLASH	INDUSTRIAL	48	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS			1048576 words	3.3			16	GRID ARRAY, LOW PROFILE, FINE PITCH				.8 mm	85 Cel	3-STATE	1MX16	1M	-40 Cel					BOTTOM	R-PBGA-B48	3.6 V	1.4 mm		7 mm	Not Qualified	TOP	16777216 bit	2.7 V	USER SELECTABLE 2.7V TO 3.6V OR 12V VPP					NOR TYPE		12 mm		90 ns	3
MT28F800B1FB-10BVET	Micron Technology	FLASH	INDUSTRIAL	48	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS			1048576 words	3.3			8	GRID ARRAY, LOW PROFILE, FINE PITCH				.8 mm	85 Cel		1MX8	1M	-40 Cel			TIN SILVER COPPER		BOTTOM	R-PBGA-B48	3.6 V	1.4 mm		7 mm	Not Qualified	BOTTOM	8388608 bit	3 V	AUTOMATIC WRITE; BOTTOM BOOT BLOCK		e1			NOR TYPE		12 mm		100 ns	5
MT28F800A3MB-11T	Micron Technology	FLASH	INDUSTRIAL	48	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS			524288 words	3.3			16	GRID ARRAY, LOW PROFILE, FINE PITCH				.8 mm	85 Cel	3-STATE	512KX16	512K	-40 Cel					BOTTOM	R-PBGA-B48	3.6 V	1.4 mm		7 mm	Not Qualified	TOP	8388608 bit	2.7 V	USER SELECTABLE 2.7V TO 3.6V OR 12V VPP					NOR TYPE		12 mm		110 ns	3
MT28F800B1MB-12TVET	Micron Technology	FLASH	OTHER	48	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS			524288 words				16	GRID ARRAY, LOW PROFILE, FINE PITCH				.8 mm	85 Cel		512KX16	512K	-25 Cel					BOTTOM	R-PBGA-B48	3.6 V	1.4 mm		7 mm	Not Qualified	TOP	8388608 bit	2.7 V	TOP BOOT BLOCK					NOR TYPE		12 mm		120 ns	5
MT28F800A3MB-9B	Micron Technology	FLASH	INDUSTRIAL	48	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS			524288 words	3.3			16	GRID ARRAY, LOW PROFILE, FINE PITCH				.8 mm	85 Cel	3-STATE	512KX16	512K	-40 Cel					BOTTOM	R-PBGA-B48	3.6 V	1.4 mm		7 mm	Not Qualified	BOTTOM	8388608 bit	2.7 V	USER SELECTABLE 2.7V TO 3.6V OR 12V VPP					NOR TYPE		12 mm		90 ns	3
MTFC32GJWEF-4MAITZ	Micron Technology	FLASH CARD	INDUSTRIAL	169	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS			34359738368 words				8	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA169,14X14,20			.5 mm	85 Cel		32GX8	32G	-40 Cel					BOTTOM	R-PBGA-B169	3.6 V	1.364 mm	52 MHz	14 mm			274877906944 bit	2.7 V				NOT SPECIFIED	NOT SPECIFIED	NAND TYPE		18 mm
MT28F800B3FB-10TET	Micron Technology	FLASH	INDUSTRIAL	48	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS			1048576 words	3.3			8	GRID ARRAY, LOW PROFILE, FINE PITCH		16		.8 mm	85 Cel		1MX8	1M	-40 Cel			TIN SILVER COPPER		BOTTOM	R-PBGA-B48	3.6 V	1.4 mm		7 mm	Not Qualified	TOP	8388608 bit	3 V	TOP BOOT BLOCK		e1			NOR TYPE		12 mm		100 ns	3
MT29F2G08ABBEAH4-AITX	Micron Technology	FLASH	INDUSTRIAL	63	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	128K	35 mA	268435456 words	1.8			8	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA63,10X12,32			.8 mm	85 Cel		256MX8	256M	-40 Cel	2K	YES		YES	BOTTOM	R-PBGA-B63	1.95 V	1.25 mm		9 mm			2147483648 bit	1.7 V		2K		NOT SPECIFIED	NOT SPECIFIED	SLC NAND TYPE	.0001 Amp	11 mm		25 ns	1.8
MT28F160A3MB-15T	Micron Technology	FLASH	INDUSTRIAL	48	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS			1048576 words	3.3			16	GRID ARRAY, LOW PROFILE, FINE PITCH				.8 mm	85 Cel	3-STATE	1MX16	1M	-40 Cel					BOTTOM	R-PBGA-B48	3.6 V	1.4 mm		7 mm	Not Qualified	TOP	16777216 bit	2.7 V	USER SELECTABLE 2.7V TO 3.6V OR 12V VPP					NOR TYPE		12 mm		150 ns	3
MTFC8GLWDM-AITATR	Micron Technology	FLASH CARD	INDUSTRIAL	153	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS			8589934592 words				8	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA153,14X14,20			.5 mm	85 Cel		8GX8	8G	-40 Cel			TIN SILVER COPPER		BOTTOM	R-PBGA-B153	3.6 V	1.2 mm	52 MHz	11.5 mm			68719476736 bit	2.7 V			e1	30	260	NAND TYPE		13 mm			2.7
MT29F2G16ABBEAH4	Micron Technology	FLASH	COMMERCIAL	63	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	64K	35 mA	134217728 words	1.8			16	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA63,10X12,32			.8 mm	70 Cel		128MX16	128M	0 Cel	2K	YES		YES	BOTTOM	R-PBGA-B63	1.95 V	1.25 mm		9 mm			2147483648 bit	1.7 V		1K				SLC NAND TYPE	.0001 Amp	11 mm		25 ns	1.8
MT29F2G08ABAEAH4-IT	Micron Technology	FLASH	INDUSTRIAL	63	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	128K	35 mA	268435456 words	3.3			8	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA63,10X12,32			.8 mm	85 Cel		256MX8	256M	-40 Cel	2K	YES		YES	BOTTOM	R-PBGA-B63	3.6 V	1.25 mm		9 mm			2147483648 bit	2.7 V		2K		NOT SPECIFIED	NOT SPECIFIED	SLC NAND TYPE	.0001 Amp	11 mm		20 ns	3.3
MTFC64GJDDN-3MWT	Micron Technology	FLASH CARD	OTHER	169	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS			68719476736 words	3.3	NO		8	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA169,14X28,20			.5 mm	85 Cel		64GX8	64G	-25 Cel		NO	TIN SILVER COPPER		BOTTOM	R-PBGA-B169	3.6 V	1.4 mm	52 MHz	14 mm			549755813888 bit	2.7 V						MLC NAND TYPE		18 mm			3.3	NO

Flash Memory

Flash memory is a type of non-volatile computer memory that is commonly used in digital devices such as USB drives, solid-state drives, and digital cameras. It is a type of EEPROM (Electrically Erasable Programmable Read-Only Memory) that allows data to be erased and reprogrammed in blocks instead of one byte at a time. Flash memory uses a floating gate transistor to store data, which allows it to retain information even when the power is turned off.

Flash memory is widely used in digital devices because of its high capacity, small size, and fast access times. It is also more durable than other types of memory, such as hard disk drives, because it has no moving parts. This makes it ideal for use in portable devices that may be subject to physical shock or vibration.

There are two types of flash memory: NOR flash and NAND flash. NOR flash is faster than NAND flash, but it has lower density and higher cost per bit. NOR flash is typically used for code storage, such as firmware or boot code, because it provides faster access times. NAND flash has higher density and lower cost per bit, which makes it ideal for data storage applications.

Flash memory has a limited lifespan, as it can only be erased and reprogrammed a limited number of times. This is because the process of erasing and reprogramming the memory causes wear and tear on the floating gate transistor. However, modern flash memory devices have a sophisticated wear-leveling algorithm that distributes writes evenly across the memory, which extends the lifespan of the device.