LFBGA Flash Memory 692

Reset All

Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Terminal Form	Parallel or Serial	Operating Mode	Sector Size (Words)	Maximum Supply Current	No. of Words	Nominal Supply Voltage / Vsup (V)	Toggle Bit	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Alternate Memory Width	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Organization	No. of Words Code	Minimum Operating Temperature	No. of Sectors/Size	Command User Interface	Terminal Finish	Ready or Busy	Terminal Position	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Width	Qualification	Boot Block	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	Page Size (words)	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Type	Maximum Standby Current	Length	Common Flash Interface	Maximum Access Time	Programming Voltage (V)	Data Polling
NAND08GW3B2AZC6F	STMicroelectronics	FLASH	INDUSTRIAL	63	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	128K	20 mA	1073741824 words	3	NO	3/3.3	8	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA63,10X12,32		Flash Memories	.8 mm	85 Cel	1GX8	1G	-40 Cel	8K	YES	TIN SILVER COPPER	YES	BOTTOM	R-PBGA-B63		3.6 V	1.4 mm	8.5 mm	Not Qualified		8589934592 bit	2.7 V		2K	e1				.00005 Amp	15 mm		35 ns	3	NO
NAND08GW3B2AZC6T	STMicroelectronics	FLASH	INDUSTRIAL	63	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	128K	20 mA	1073741824 words	3	NO	3/3.3	8	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA63,10X12,32		Flash Memories	.8 mm	85 Cel	1GX8	1G	-40 Cel	8K	YES	TIN LEAD	YES	BOTTOM	R-PBGA-B63		3.6 V	1.4 mm	8.5 mm	Not Qualified		8589934592 bit	2.7 V		2K	e0				.00005 Amp	15 mm		35 ns	3	NO
NAND08GR4B2BZC1F	STMicroelectronics	FLASH	COMMERCIAL	63	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS			536870912 words	1.8			16	GRID ARRAY, LOW PROFILE, FINE PITCH				.8 mm	70 Cel	512MX16	512M	0 Cel			TIN SILVER COPPER		BOTTOM	R-PBGA-B63		1.95 V	1.4 mm	8.5 mm	Not Qualified		8589934592 bit	1.7 V			e1					15 mm		35 ns	1.8
NAND08GW3B3BZC6F	STMicroelectronics	FLASH	INDUSTRIAL	63	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS			1073741824 words	3			8	GRID ARRAY, LOW PROFILE, FINE PITCH				.8 mm	85 Cel	1GX8	1G	-40 Cel			TIN SILVER COPPER		BOTTOM	R-PBGA-B63		3.6 V	1.4 mm	8.5 mm	Not Qualified		8589934592 bit	2.7 V			e1					15 mm		35 ns	3
NAND08GR4B2AZC6T	STMicroelectronics	FLASH	INDUSTRIAL	63	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	64K	15 mA	536870912 words	1.8	NO	1.8	16	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA63,10X12,32		Flash Memories	.8 mm	85 Cel	512MX16	512M	-40 Cel	8K	YES	TIN LEAD	YES	BOTTOM	R-PBGA-B63		1.95 V	1.4 mm	8.5 mm	Not Qualified		8589934592 bit	1.7 V		1K	e0				.00005 Amp	15 mm		35 ns	1.8	NO
NAND08GW4B2CZC1F	STMicroelectronics	FLASH	COMMERCIAL	63	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS			536870912 words	3			16	GRID ARRAY, LOW PROFILE, FINE PITCH				.8 mm	70 Cel	512MX16	512M	0 Cel			TIN SILVER COPPER		BOTTOM	R-PBGA-B63		3.6 V	1.4 mm	8.5 mm	Not Qualified		8589934592 bit	2.7 V			e1					15 mm		35 ns	3
NAND08GW4B3AZC1E	STMicroelectronics	FLASH	COMMERCIAL	63	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	64K	20 mA	536870912 words	3	NO	3/3.3	16	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA63,10X12,32		Flash Memories	.8 mm	70 Cel	512MX16	512M	0 Cel	8K	YES	TIN SILVER COPPER	YES	BOTTOM	R-PBGA-B63		3.6 V	1.4 mm	8.5 mm	Not Qualified		8589934592 bit	2.7 V		1K	e1				.00005 Amp	15 mm		35 ns	3	NO
S70JL128H00BAI012	Infineon Technologies	FLASH	INDUSTRIAL	63	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS			4194304 words	3			16	GRID ARRAY		8		.8 mm	85 Cel	4MX16	4M	-40 Cel					BOTTOM	R-PBGA-B63		3.6 V	1.4 mm	10.95 mm	Not Qualified	BOTTOM/TOP	67108864 bit	2.7 V						NOR TYPE		11.95 mm		85 ns	3.3
S70JL128H00BAI010	Infineon Technologies	FLASH	INDUSTRIAL	63	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS			4194304 words	3			16	GRID ARRAY		8		.8 mm	85 Cel	4MX16	4M	-40 Cel					BOTTOM	R-PBGA-B63		3.6 V	1.4 mm	10.95 mm	Not Qualified	BOTTOM/TOP	67108864 bit	2.7 V						NOR TYPE		11.95 mm		85 ns	3.3
S70JL128H00BAI002	Infineon Technologies	FLASH	INDUSTRIAL	63	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS			4194304 words	3			16	GRID ARRAY		8		.8 mm	85 Cel	4MX16	4M	-40 Cel					BOTTOM	R-PBGA-B63		3.6 V	1.4 mm	10.95 mm	Not Qualified	BOTTOM/TOP	67108864 bit	2.7 V						NOR TYPE		11.95 mm		70 ns	3.3
S70JL128H00BAI013	Infineon Technologies	FLASH	INDUSTRIAL	63	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS			4194304 words	3			16	GRID ARRAY		8		.8 mm	85 Cel	4MX16	4M	-40 Cel					BOTTOM	R-PBGA-B63		3.6 V	1.4 mm	10.95 mm	Not Qualified	BOTTOM/TOP	67108864 bit	2.7 V						NOR TYPE		11.95 mm		85 ns	3.3
S70JL128H00BAI003	Infineon Technologies	FLASH	INDUSTRIAL	63	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS			4194304 words	3			16	GRID ARRAY		8		.8 mm	85 Cel	4MX16	4M	-40 Cel					BOTTOM	R-PBGA-B63		3.6 V	1.4 mm	10.95 mm	Not Qualified	BOTTOM/TOP	67108864 bit	2.7 V						NOR TYPE		11.95 mm		70 ns	3.3
S70JL128H00BAI000	Infineon Technologies	FLASH	INDUSTRIAL	63	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS			4194304 words	3			16	GRID ARRAY		8		.8 mm	85 Cel	4MX16	4M	-40 Cel					BOTTOM	R-PBGA-B63		3.6 V	1.4 mm	10.95 mm	Not Qualified	BOTTOM/TOP	67108864 bit	2.7 V	ALSO CONFIGURABLE AS 8M X 8					NOR TYPE		11.95 mm		70 ns	3.3
THGBM1G7D8EBAI0	Toshiba	FLASH	OTHER	169	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS			8589934592 words	3.3			16	GRID ARRAY, LOW PROFILE, FINE PITCH				.5 mm	85 Cel	8GX16	8G	-25 Cel					BOTTOM	R-PBGA-B169		3.6 V	1.4 mm	12 mm	Not Qualified		137438953472 bit	2.7 V						MLC NAND TYPE		18 mm			3.3
THGBM1G5D2EBAI7	Toshiba	FLASH	OTHER	169	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS			2147483648 words	3.3			16	GRID ARRAY, LOW PROFILE, FINE PITCH				.5 mm	85 Cel	2GX16	2G	-25 Cel					BOTTOM	R-PBGA-B169		3.6 V	1.3 mm	12 mm	Not Qualified		34359738368 bit	2.7 V						MLC NAND TYPE		16 mm			3.3
THGBM1G6D4EBAI4	Toshiba	FLASH	OTHER	169	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS			4294967296 words	3.3			16	GRID ARRAY, LOW PROFILE, FINE PITCH				.5 mm	85 Cel	4GX16	4G	-25 Cel			TIN SILVER COPPER		BOTTOM	R-PBGA-B169		3.6 V	1.3 mm	12 mm	Not Qualified		68719476736 bit	2.7 V			e1			MLC NAND TYPE		18 mm			3.3
THGBM1G8D8EBAI2	Toshiba	FLASH	OTHER	169	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS			8589934592 words	3.3			32	GRID ARRAY, LOW PROFILE, FINE PITCH				.5 mm	85 Cel	8GX32	8G	-25 Cel			TIN SILVER COPPER		BOTTOM	R-PBGA-B169		3.6 V	1.4 mm	14 mm	Not Qualified		274877906944 bit	2.7 V			e1			MLC NAND TYPE		18 mm			3.3
THGBM1G7D4EBAI2	Toshiba	FLASH	OTHER	169	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS			4294967296 words	3.3			32	GRID ARRAY, LOW PROFILE, FINE PITCH				.5 mm	85 Cel	4GX32	4G	-25 Cel					BOTTOM	R-PBGA-B169		3.6 V	1.4 mm	14 mm	Not Qualified		137438953472 bit	2.7 V						MLC NAND TYPE		18 mm			3.3
THGBM1G4D1EBAI7	Toshiba	FLASH	OTHER	169	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS			1073741824 words	3.3			16	GRID ARRAY, LOW PROFILE, FINE PITCH				.5 mm	85 Cel	1GX16	1G	-25 Cel			TIN SILVER COPPER		BOTTOM	R-PBGA-B169		3.6 V	1.3 mm	12 mm	Not Qualified		17179869184 bit	2.7 V			e1			MLC NAND TYPE		16 mm			3.3
UPD29F064115F9-EB90X-CD5	Renesas Electronics	FLASH	OTHER	85	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS			4194304 words	1.8			16	GRID ARRAY, LOW PROFILE, FINE PITCH				.8 mm	85 Cel	4MX16	4M	-25 Cel			TIN LEAD		BOTTOM	R-PBGA-B85		1.95 V	1.21 mm	8 mm	Not Qualified	BOTTOM/TOP	67108864 bit	1.65 V			e0			NOR TYPE		11 mm		90 ns	1.8
UPD29F064115F9-DB80X-CD5	Renesas Electronics	FLASH	OTHER	85	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS			4194304 words	1.95			16	GRID ARRAY, LOW PROFILE, FINE PITCH				.8 mm	85 Cel	4MX16	4M	-25 Cel			TIN LEAD		BOTTOM	R-PBGA-B85		2.1 V	1.21 mm	8 mm	Not Qualified	BOTTOM/TOP	67108864 bit	1.8 V			e0			NOR TYPE		11 mm		80 ns	1.8
UPD29F064115F9-DB85X-CD5	Renesas Electronics	FLASH	OTHER	85	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS			4194304 words	1.95			16	GRID ARRAY, LOW PROFILE, FINE PITCH				.8 mm	85 Cel	4MX16	4M	-25 Cel			TIN LEAD		BOTTOM	R-PBGA-B85		2.1 V	1.21 mm	8 mm	Not Qualified	BOTTOM/TOP	67108864 bit	1.8 V			e0			NOR TYPE		11 mm		85 ns	1.8
UPD29F064115F9-EB85X-CD5	Renesas Electronics	FLASH	OTHER	85	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS			4194304 words	1.8			16	GRID ARRAY, LOW PROFILE, FINE PITCH				.8 mm	85 Cel	4MX16	4M	-25 Cel			TIN LEAD		BOTTOM	R-PBGA-B85		1.95 V	1.21 mm	8 mm	Not Qualified	BOTTOM/TOP	67108864 bit	1.65 V			e0			NOR TYPE		11 mm		85 ns	1.8
K8C1015ETM-DC1E0	Samsung	FLASH	COMMERCIAL	167	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS			33554432 words	1.8			16	GRID ARRAY, LOW PROFILE, FINE PITCH				.8 mm	70 Cel	32MX16	32M	0 Cel					BOTTOM	R-PBGA-B167		1.95 V	1.4 mm	10.5 mm	Not Qualified	TOP	536870912 bit	1.7 V	TOP BOOT BLOCK, SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE							14 mm		110 ns	1.8
K8C1015ETM-DC1D0	Samsung	FLASH	COMMERCIAL	167	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	16K,64K	70 mA	33554432 words	1.8	YES	1.8	16	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA167,12X15,32		Flash Memories	.8 mm	70 Cel	32MX16	32M	0 Cel	4,511	YES		YES	BOTTOM	R-PBGA-B167	3	1.95 V	1.4 mm	10.5 mm	Not Qualified	TOP	536870912 bit	1.7 V	TOP BOOT BLOCK, SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE				260	NOR TYPE	.00002 Amp	14 mm	YES	110 ns	1.8	YES
KFWAGH6Q4M-DEB80	Samsung	FLASH	OTHER	63	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	256K	40 mA	1073741824 words	1.8	NO	1.8	16	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA63,10X12,32		Flash Memories	.8 mm	85 Cel	1GX16	1G	-30 Cel	4K	YES		YES	BOTTOM	R-PBGA-B63		1.95 V	1.4 mm	10 mm	Not Qualified	INDEPENDENT	17179869184 bit	1.7 V	SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE	2K		NOT SPECIFIED	NOT SPECIFIED	MLC NAND TYPE	.0001 Amp	13 mm		76 ns	1.8	NO
KFW8G16Q2M-DEB60	Samsung	FLASH	COMMERCIAL EXTENDED	63	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	64K		524288 words	1.8	NO	1.8	16	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA63,10X12,32		Flash Memories	.8 mm	85 Cel	512KX16	512K	-30 Cel	8K	YES		YES	BOTTOM	R-PBGA-B63		1.95 V	1.4 mm	10 mm	Not Qualified		8388608 bit	1.7 V		1K		NOT SPECIFIED	NOT SPECIFIED	SLC NAND TYPE		13 mm		76 ns	1.8	NO
K8C1315ETM-FC1C0	Samsung	FLASH	COMMERCIAL	167	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS			33554432 words	1.8			16	GRID ARRAY, LOW PROFILE, FINE PITCH				.8 mm	70 Cel	32MX16	32M	0 Cel			TIN LEAD		BOTTOM	R-PBGA-B167		1.95 V	1.4 mm	10.5 mm	Not Qualified	TOP	536870912 bit	1.7 V	SYNCHRONOUS BURST MODE OPERATION IS ALSO POSSIBLE		e0			NOR TYPE		14 mm		110 ns	1.8
K8C1115EBM-DE1D0	Samsung	FLASH	OTHER	167	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS			33554432 words	1.8			16	GRID ARRAY, LOW PROFILE, FINE PITCH				.8 mm	85 Cel	32MX16	32M	-25 Cel					BOTTOM	R-PBGA-B167		1.95 V	1.4 mm	10.5 mm		BOTTOM	536870912 bit	1.7 V	BOTTOM BOOT BLOCK, SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE							14 mm		110 ns	1.8
K8C5715ETM-FE1C0	Samsung	FLASH	OTHER	167	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	16K,64K	55 mA	16777216 words	1.8	YES	1.8	16	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA167,12X15,32		Flash Memories	.8 mm	85 Cel	16MX16	16M	-25 Cel	4,255	YES	TIN LEAD	YES	BOTTOM	R-PBGA-B167		1.95 V	1.4 mm	10.5 mm	Not Qualified	TOP	268435456 bit	1.7 V	SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE		e0			NOR TYPE	.00002 Amp	14 mm	YES	100 ns	1.8	YES
K8C1315ETM-FE1F0	Samsung	FLASH	OTHER	167	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	16K,64K	70 mA	33554432 words	1.8	YES	1.8	16	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA167,12X15,32		Flash Memories	.8 mm	85 Cel	32MX16	32M	-25 Cel	4,511	YES	TIN LEAD	YES	BOTTOM	R-PBGA-B167	3	1.95 V	1.4 mm	10.5 mm	Not Qualified	TOP	536870912 bit	1.7 V	SYNCHRONOUS BURST MODE OPERATION IS ALSO POSSIBLE		e0		240	NOR TYPE	.00002 Amp	14 mm	YES	110 ns	1.8	YES
K8C1115ETM-FE1D0	Samsung	FLASH	OTHER	167	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS			33554432 words	1.8			16	GRID ARRAY, LOW PROFILE, FINE PITCH				.8 mm	85 Cel	32MX16	32M	-25 Cel					BOTTOM	R-PBGA-B167		1.95 V	1.4 mm	10.5 mm		TOP	536870912 bit	1.7 V	TOP BOOT BLOCK, SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE							14 mm		110 ns	1.8
K8C1215EBM-DE1E0	Samsung	FLASH	OTHER	167	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS			33554432 words	1.8			16	GRID ARRAY, LOW PROFILE, FINE PITCH				.8 mm	85 Cel	32MX16	32M	-25 Cel			TIN SILVER COPPER		BOTTOM	R-PBGA-B167	2	1.95 V	1.4 mm	10.5 mm	Not Qualified	BOTTOM	536870912 bit	1.7 V	SYNCHRONOUS BURST MODE OPERATION IS ALSO POSSIBLE		e1			NOR TYPE		14 mm		110 ns	1.8
K8C1115EBM-DC1E0	Samsung	FLASH	COMMERCIAL	167	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	16K,64K	70 mA	33554432 words	1.8	YES	1.8	16	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA167,12X15,32		Flash Memories	.8 mm	70 Cel	32MX16	32M	0 Cel	4,511	YES		YES	BOTTOM	R-PBGA-B167		1.95 V	1.4 mm	10.5 mm	Not Qualified	BOTTOM	536870912 bit	1.7 V	BOTTOM BOOT BLOCK, SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE			NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.00002 Amp	14 mm	YES	110 ns	1.8	YES
K8C1315ETM-DC1C0	Samsung	FLASH	COMMERCIAL	167	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS			33554432 words	1.8			16	GRID ARRAY, LOW PROFILE, FINE PITCH				.8 mm	70 Cel	32MX16	32M	0 Cel			TIN SILVER COPPER		BOTTOM	R-PBGA-B167	2	1.95 V	1.4 mm	10.5 mm	Not Qualified	TOP	536870912 bit	1.7 V	SYNCHRONOUS BURST MODE OPERATION IS ALSO POSSIBLE		e1			NOR TYPE		14 mm		110 ns	1.8
K8C5615ETM-DC1D0	Samsung	FLASH	COMMERCIAL	167	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	16K,64K	55 mA	16777216 words	1.8	YES	1.8	16	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA167,12X15,32		Flash Memories	.8 mm	70 Cel	16MX16	16M	0 Cel	4,255	YES	TIN SILVER COPPER	YES	BOTTOM	R-PBGA-B167	2	1.95 V	1.4 mm	10.5 mm	Not Qualified	TOP	268435456 bit	1.7 V	SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE		e1			NOR TYPE	.00002 Amp	14 mm	YES	100 ns	1.8	YES
K8C1315EBM-DC1E0	Samsung	FLASH	COMMERCIAL	167	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	16K,64K	70 mA	33554432 words	1.8	YES	1.8	16	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA167,12X15,32		Flash Memories	.8 mm	70 Cel	32MX16	32M	0 Cel	4,511	YES	TIN SILVER COPPER	YES	BOTTOM	R-PBGA-B167	3	1.95 V	1.4 mm	10.5 mm	Not Qualified	BOTTOM	536870912 bit	1.7 V	SYNCHRONOUS BURST MODE OPERATION IS ALSO POSSIBLE		e1		260	NOR TYPE	.00002 Amp	14 mm	YES	110 ns	1.8	YES
K8C5415EBM-FE1F	Samsung	FLASH	OTHER	167	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS			16777216 words	1.8			16	GRID ARRAY, LOW PROFILE, FINE PITCH				.8 mm	85 Cel	16MX16	16M	-25 Cel					BOTTOM	R-PBGA-B167		1.95 V	1.4 mm	10.5 mm	Not Qualified	BOTTOM	268435456 bit	1.7 V						NOR TYPE		14 mm		100 ns	1.8
K8C1315EBM-FC1F0	Samsung	FLASH	COMMERCIAL	167	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	16K,64K	70 mA	33554432 words	1.8	YES	1.8	16	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA167,12X15,32		Flash Memories	.8 mm	70 Cel	32MX16	32M	0 Cel	4,511	YES	TIN LEAD	YES	BOTTOM	R-PBGA-B167	3	1.95 V	1.4 mm	10.5 mm	Not Qualified	BOTTOM	536870912 bit	1.7 V	SYNCHRONOUS BURST MODE OPERATION IS ALSO POSSIBLE		e0		240	NOR TYPE	.00002 Amp	14 mm	YES	110 ns	1.8	YES
K8C1015ETM-DE1E0	Samsung	FLASH	OTHER	167	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS			33554432 words	1.8			16	GRID ARRAY, LOW PROFILE, FINE PITCH				.8 mm	85 Cel	32MX16	32M	-25 Cel					BOTTOM	R-PBGA-B167		1.95 V	1.4 mm	10.5 mm	Not Qualified	TOP	536870912 bit	1.7 V	TOP BOOT BLOCK, SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE							14 mm		110 ns	1.8
K8C1215EBM-FE1F0	Samsung	FLASH	OTHER	167	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS			33554432 words	1.8			16	GRID ARRAY, LOW PROFILE, FINE PITCH				.8 mm	85 Cel	32MX16	32M	-25 Cel			TIN LEAD		BOTTOM	R-PBGA-B167		1.95 V	1.4 mm	10.5 mm	Not Qualified	BOTTOM	536870912 bit	1.7 V	SYNCHRONOUS BURST MODE OPERATION IS ALSO POSSIBLE		e0			NOR TYPE		14 mm		110 ns	1.8
K8C1015EBM-DE1E0	Samsung	FLASH	OTHER	167	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS			33554432 words	1.8			16	GRID ARRAY, LOW PROFILE, FINE PITCH				.8 mm	85 Cel	32MX16	32M	-25 Cel					BOTTOM	R-PBGA-B167		1.95 V	1.4 mm	10.5 mm	Not Qualified	BOTTOM	536870912 bit	1.7 V	BOTTOM BOOT BLOCK, SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE							14 mm		110 ns	1.8
K8C1015ETM-FC1D0	Samsung	FLASH	COMMERCIAL	167	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	16K,64K	70 mA	33554432 words	1.8	YES	1.8	16	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA167,12X15,32		Flash Memories	.8 mm	70 Cel	32MX16	32M	0 Cel	4,511	YES		YES	BOTTOM	R-PBGA-B167	3	1.95 V	1.4 mm	10.5 mm	Not Qualified	TOP	536870912 bit	1.7 V	TOP BOOT BLOCK, SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE				240	NOR TYPE	.00002 Amp	14 mm	YES	110 ns	1.8	YES
K8C1215ETM-FC1F0	Samsung	FLASH	COMMERCIAL	167	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS			33554432 words	1.8			16	GRID ARRAY, LOW PROFILE, FINE PITCH				.8 mm	70 Cel	32MX16	32M	0 Cel			TIN LEAD		BOTTOM	R-PBGA-B167		1.95 V	1.4 mm	10.5 mm	Not Qualified	TOP	536870912 bit	1.7 V	SYNCHRONOUS BURST MODE OPERATION IS ALSO POSSIBLE		e0			NOR TYPE		14 mm		110 ns	1.8
K8C5715EBM-DE1D0	Samsung	FLASH	OTHER	167	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	16K,64K	55 mA	16777216 words	1.8	YES	1.8	16	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA167,12X15,32		Flash Memories	.8 mm	85 Cel	16MX16	16M	-25 Cel	4,255	YES	TIN SILVER COPPER	YES	BOTTOM	R-PBGA-B167	2	1.95 V	1.4 mm	10.5 mm	Not Qualified	BOTTOM	268435456 bit	1.7 V	SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE		e1			NOR TYPE	.00002 Amp	14 mm	YES	100 ns	1.8	YES
K8C1015EBM-FC1D0	Samsung	FLASH	COMMERCIAL	167	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	16K,64K	70 mA	33554432 words	1.8	YES	1.8	16	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA167,12X15,32		Flash Memories	.8 mm	70 Cel	32MX16	32M	0 Cel	4,511	YES		YES	BOTTOM	R-PBGA-B167	3	1.95 V	1.4 mm	10.5 mm	Not Qualified	BOTTOM	536870912 bit	1.7 V	BOTTOM BOOT BLOCK, SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE				240	NOR TYPE	.00002 Amp	14 mm	YES	110 ns	1.8	YES
K8C1315EBM-FC1E0	Samsung	FLASH	COMMERCIAL	167	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	16K,64K	70 mA	33554432 words	1.8	YES	1.8	16	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA167,12X15,32		Flash Memories	.8 mm	70 Cel	32MX16	32M	0 Cel	4,511	YES	TIN LEAD	YES	BOTTOM	R-PBGA-B167	3	1.95 V	1.4 mm	10.5 mm	Not Qualified	BOTTOM	536870912 bit	1.7 V	SYNCHRONOUS BURST MODE OPERATION IS ALSO POSSIBLE		e0		240	NOR TYPE	.00002 Amp	14 mm	YES	110 ns	1.8	YES
K8C1315EBM-DE1D0	Samsung	FLASH	OTHER	167	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS			33554432 words	1.8			16	GRID ARRAY, LOW PROFILE, FINE PITCH				.8 mm	85 Cel	32MX16	32M	-25 Cel			TIN SILVER COPPER		BOTTOM	R-PBGA-B167	2	1.95 V	1.4 mm	10.5 mm	Not Qualified	BOTTOM	536870912 bit	1.7 V	SYNCHRONOUS BURST MODE OPERATION IS ALSO POSSIBLE		e1			NOR TYPE		14 mm		110 ns	1.8

Flash Memory

Flash memory is a type of non-volatile computer memory that is commonly used in digital devices such as USB drives, solid-state drives, and digital cameras. It is a type of EEPROM (Electrically Erasable Programmable Read-Only Memory) that allows data to be erased and reprogrammed in blocks instead of one byte at a time. Flash memory uses a floating gate transistor to store data, which allows it to retain information even when the power is turned off.

Flash memory is widely used in digital devices because of its high capacity, small size, and fast access times. It is also more durable than other types of memory, such as hard disk drives, because it has no moving parts. This makes it ideal for use in portable devices that may be subject to physical shock or vibration.

There are two types of flash memory: NOR flash and NAND flash. NOR flash is faster than NAND flash, but it has lower density and higher cost per bit. NOR flash is typically used for code storage, such as firmware or boot code, because it provides faster access times. NAND flash has higher density and lower cost per bit, which makes it ideal for data storage applications.

Flash memory has a limited lifespan, as it can only be erased and reprogrammed a limited number of times. This is because the process of erasing and reprogramming the memory causes wear and tear on the floating gate transistor. However, modern flash memory devices have a sophisticated wear-leveling algorithm that distributes writes evenly across the memory, which extends the lifespan of the device.