QCCJ Flash Memory 2,332

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Terminal Form	Parallel or Serial	Operating Mode	Sector Size (Words)	Maximum Supply Current	No. of Words	Nominal Supply Voltage / Vsup (V)	Toggle Bit	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Minimum Data Retention Time	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	No. of Sectors/Size	Command User Interface	Terminal Finish	Ready or Busy	Terminal Position	No. of Ports	Write Protection	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Endurance	Maximum Clock Frequency (fCLK)	Width	Qualification	Maximum Write Cycle Time (tWC)	Boot Block	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	Page Size (words)	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Type	Maximum Standby Current	Length	Maximum Access Time	Programming Voltage (V)	Data Polling
AM29F040B-120JC	Spansion	FLASH	COMMERCIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	64K	40 mA	524288 words	5	YES	5	8	CHIP CARRIER	LDCC32,.5X.6	Flash Memories		1.27 mm	70 Cel		512KX8	512K	0 Cel	8	YES	TIN LEAD		QUAD			R-PQCC-J32	3	5.5 V	3.556 mm	1000000 Write/Erase Cycles		11.43 mm	Not Qualified			4194304 bit	4.5 V			e0		260	NOR TYPE	.000005 Amp	13.97 mm	120 ns	5	YES
AM29F040B-90JE	Spansion	FLASH	MILITARY	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	64K	40 mA	524288 words	5	YES	5	8	CHIP CARRIER	LDCC32,.5X.6	Flash Memories		1.27 mm	125 Cel		512KX8	512K	-55 Cel	8	YES	TIN LEAD		QUAD			R-PQCC-J32	3	5.5 V	3.556 mm	1000000 Write/Erase Cycles		11.43 mm	Not Qualified			4194304 bit	4.5 V			e0		260	NOR TYPE	.000005 Amp	13.97 mm	90 ns	5	YES
CAT28F512GI12	Onsemi	FLASH	INDUSTRIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS		30 mA	65536 words	5	NO	5	8	CHIP CARRIER	LDCC32,.5X.6	Flash Memories		1.27 mm	85 Cel		64KX8	64K	-40 Cel		YES	TIN		QUAD			R-PQCC-J32	3	5.5 V	3.55 mm	100000 Write/Erase Cycles		11.43 mm	Not Qualified			524288 bit	4.5 V			e3			NOR TYPE	.00001 Amp	13.97 mm	120 ns	12	NO
CAT28F512GI-12	Catalyst Semiconductor	FLASH	INDUSTRIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS		30 mA	65536 words	5	NO	5	8	CHIP CARRIER	LDCC32,.5X.6	Flash Memories		1.27 mm	85 Cel		64KX8	64K	-40 Cel		YES	MATTE TIN		QUAD			R-PQCC-J32	3	5.5 V	3.55 mm	100000 Write/Erase Cycles		11.43 mm	Not Qualified			524288 bit	4.5 V			e3			NOR TYPE	.00001 Amp	13.97 mm	120 ns	12	NO
GLS29EE010-70-4C-NHE	Greenliant Systems	FLASH	COMMERCIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS		50 mA	131072 words	5	YES	5	8	CHIP CARRIER	LDCC32,.5X.6	EEPROMs		1.27 mm	70 Cel		128KX8	128K	0 Cel		NO			QUAD			R-PQCC-J32	3	5.5 V	3.556 mm	10000 Write/Erase Cycles		11.43 mm	Not Qualified	10 ms		1048576 bit	4.5 V		128					.00005 Amp	13.97 mm	70 ns	5	YES
GLS29EE010-70-4C-NHE-T	Greenliant Systems	FLASH	COMMERCIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS			131072 words	5			8	CHIP CARRIER				1.27 mm	70 Cel		128KX8	128K	0 Cel					QUAD			R-PQCC-J32		5.5 V	3.556 mm			11.43 mm		10 ms		1048576 bit	4.5 V				10	260	NOR TYPE		13.97 mm	70 ns	5
N28F512-200	Intel	FLASH	COMMERCIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS		30 mA	65536 words	5	NO	5	8	CHIP CARRIER	LDCC32,.5X.6	Flash Memories		1.27 mm	70 Cel	3-STATE	64KX8	64K	0 Cel		YES	TIN LEAD		QUAD			R-PQCC-J32		5.5 V	3.55 mm	10000 Write/Erase Cycles		11.43 mm	Not Qualified			524288 bit	4.5 V			e0			NOR TYPE	.0001 Amp	13.97 mm	200 ns	12	NO
A29040BL-70F	Amic Technology	FLASH	COMMERCIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	64K	40 mA	524288 words	5	YES	5	8	CHIP CARRIER	LDCC32,.5X.6	Flash Memories		1.27 mm	70 Cel		512KX8	512K	0 Cel	8	YES			QUAD			R-PQCC-J32		5.5 V	3.4 mm	100000 Write/Erase Cycles		11.43 mm	Not Qualified			4194304 bit	4.5 V				NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.000005 Amp	13.97 mm	70 ns	5	YES
AT29C010A-90JI	Atmel	FLASH	INDUSTRIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	8K,112K,8K	50 mA	131072 words	5	YES	5	8	CHIP CARRIER	LDCC32,.5X.6	Flash Memories		1.27 mm	85 Cel	3-STATE	128KX8	128K	-40 Cel	1,1,1	NO	Tin/Lead (Sn/Pb)		QUAD			R-PQCC-J32	2	5.5 V	3.556 mm			11.43 mm	Not Qualified	10 ms	BOTTOM/TOP	1048576 bit	4.5 V			e0	30	225	NOR TYPE	.00003 Amp	13.97 mm	90 ns	5	YES
CAT28F512G90	Onsemi	FLASH	COMMERCIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS		30 mA	65536 words	5	NO	5	8	CHIP CARRIER	LDCC32,.5X.6	Flash Memories		1.27 mm	70 Cel		64KX8	64K	0 Cel		YES	MATTE TIN		QUAD			R-PQCC-J32	3	5.5 V	3.55 mm	100000 Write/Erase Cycles		11.43 mm	Not Qualified			524288 bit	4.5 V			e3			NOR TYPE	.00001 Amp	13.97 mm	90 ns	12	NO
CAT28F512G-90	Catalyst Semiconductor	FLASH	COMMERCIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS		30 mA	65536 words	5	NO	5	8	CHIP CARRIER	LDCC32,.5X.6	Flash Memories		1.27 mm	70 Cel		64KX8	64K	0 Cel		YES	MATTE TIN		QUAD			R-PQCC-J32	3	5.5 V	3.55 mm	100000 Write/Erase Cycles		11.43 mm	Not Qualified			524288 bit	4.5 V			e3			NOR TYPE	.00001 Amp	13.97 mm	90 ns	12	NO
CAT28F512GI-90	Catalyst Semiconductor	FLASH	INDUSTRIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS		30 mA	65536 words	5	NO	5	8	CHIP CARRIER	LDCC32,.5X.6	Flash Memories		1.27 mm	85 Cel		64KX8	64K	-40 Cel		YES	MATTE TIN		QUAD			R-PQCC-J32	3	5.5 V	3.55 mm	100000 Write/Erase Cycles		11.43 mm	Not Qualified			524288 bit	4.5 V			e3			NOR TYPE	.00001 Amp	13.97 mm	90 ns	12	NO
CAT28F512GI90	Onsemi	FLASH	INDUSTRIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS		30 mA	65536 words	5	NO	5	8	CHIP CARRIER	LDCC32,.5X.6	Flash Memories		1.27 mm	85 Cel		64KX8	64K	-40 Cel		YES	TIN		QUAD			R-PQCC-J32	3	5.5 V	3.55 mm	100000 Write/Erase Cycles		11.43 mm	Not Qualified			524288 bit	4.5 V			e3			NOR TYPE	.00001 Amp	13.97 mm	90 ns	12	NO
GLS29EE512-70-4C-NHE	Greenliant Systems	FLASH	COMMERCIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS			65536 words	5			8	CHIP CARRIER				1.27 mm	70 Cel		64KX8	64K	0 Cel					QUAD			R-PQCC-J32	3	5.5 V	3.556 mm			11.43 mm		10 ms		524288 bit	4.5 V				10	260			13.97 mm	70 ns	5
SST39SF010A-55-4C-NHE	Microchip Technology	FLASH	COMMERCIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	4K	35 mA	131072 words	5	YES	5	8	CHIP CARRIER	LDCC32,.5X.6	Flash Memories	100	1.27 mm	70 Cel	3-STATE	128KX8	128K	0 Cel	32	YES	MATTE TIN		QUAD	1	HARDWARE/SOFTWARE	R-PQCC-J32	3	5.5 V	3.556 mm	100000 Write/Erase Cycles		11.43 mm	Not Qualified			1048576 bit	4.5 V			e3	40	245	NOR TYPE	.0001 Amp	13.97 mm	55 ns	5	YES
SST39SF040-45-4C-NHE	Microchip Technology	FLASH	COMMERCIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	4K	35 mA	524288 words	5	YES	5	8	CHIP CARRIER	LDCC32,.5X.6	Flash Memories		1.27 mm	70 Cel		512KX8	512K	0 Cel	128	YES	MATTE TIN		QUAD			R-PQCC-J32	3	5.5 V	3.556 mm			11.43 mm	Not Qualified			4194304 bit	4.5 V			e3			NOR TYPE	.0001 Amp	13.97 mm	45 ns	5	YES
AM29F010B-120JI	Spansion	FLASH	INDUSTRIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	16K	40 mA	131072 words	5	YES	5	8	CHIP CARRIER	LDCC32,.5X.6	Flash Memories		1.27 mm	85 Cel		128KX8	128K	-40 Cel	8	YES	TIN LEAD		QUAD			R-PQCC-J32	3	5.5 V	3.556 mm	1000000 Write/Erase Cycles		11.43 mm	Not Qualified			1048576 bit	4.5 V			e0		260	NOR TYPE	.000005 Amp	13.97 mm	120 ns	5	YES
AM29F010B-55JIT	Advanced Micro Devices	FLASH	INDUSTRIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS			131072 words	5			8	CHIP CARRIER				1.27 mm	85 Cel		128KX8	128K	-40 Cel					QUAD			R-PQCC-J32		5.5 V	3.556 mm			11.43 mm	Not Qualified			1048576 bit	4.5 V						NOR TYPE		13.97 mm	55 ns	5
AM29F010B-55JI\T	Spansion	FLASH	INDUSTRIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS			131072 words	5			8	CHIP CARRIER				1.27 mm	85 Cel		128KX8	128K	-40 Cel			TIN LEAD		QUAD			R-PQCC-J32		5.5 V	3.556 mm			11.43 mm	Not Qualified			1048576 bit	4.5 V			e0			NOR TYPE		13.97 mm	55 ns	5
AT29C010A-70JU	Atmel	FLASH	INDUSTRIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	8K,112K,8K	50 mA	131072 words	5	YES	5	8	CHIP CARRIER	LDCC32,.5X.6	Flash Memories		1.27 mm	85 Cel		128KX8	128K	-40 Cel	1,1,1	NO	Matte Tin (Sn)		QUAD			R-PQCC-J32	2	5.25 V	3.556 mm			11.43 mm	Not Qualified	10 ms	BOTTOM/TOP	1048576 bit	4.75 V			e3	40	245	NOR TYPE	.00003 Amp	13.97 mm	70 ns	5	YES
AT29C010A-90JC	Atmel	FLASH	COMMERCIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	8K,112K,8K	50 mA	131072 words	5	YES	5	8	CHIP CARRIER	LDCC32,.5X.6	Flash Memories		1.27 mm	70 Cel	3-STATE	128KX8	128K	0 Cel	1,1,1	NO	Tin/Lead (Sn/Pb)		QUAD			R-PQCC-J32	2	5.5 V	3.556 mm			11.43 mm	Not Qualified	10 ms	BOTTOM/TOP	1048576 bit	4.5 V			e0	30	225	NOR TYPE	.00003 Amp	13.97 mm	90 ns	5	YES
AT29C010A-90JU	Atmel	FLASH	INDUSTRIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	8K,112K,8K	50 mA	131072 words	5	YES	5	8	CHIP CARRIER	LDCC32,.5X.6	Flash Memories		1.27 mm	85 Cel	3-STATE	128KX8	128K	-40 Cel	1,1,1	NO	Matte Tin (Sn)		QUAD			R-PQCC-J32	2	5.5 V	3.556 mm			11.43 mm	Not Qualified	10 ms	BOTTOM/TOP	1048576 bit	4.5 V			e3	40	245	NOR TYPE	.00003 Amp	13.97 mm	90 ns	5	YES
CAT28F512G12	Onsemi	FLASH	COMMERCIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS		30 mA	65536 words	5	NO	5	8	CHIP CARRIER	LDCC32,.5X.6	Flash Memories		1.27 mm	70 Cel		64KX8	64K	0 Cel		YES	Matte Tin (Sn)		QUAD			R-PQCC-J32	3	5.5 V	3.55 mm	100000 Write/Erase Cycles		11.43 mm	Not Qualified			524288 bit	4.5 V			e3	40	260	NOR TYPE	.00001 Amp	13.97 mm	120 ns	12	NO
CAT28F512G-12	Catalyst Semiconductor	FLASH	COMMERCIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS		30 mA	65536 words	5	NO	5	8	CHIP CARRIER	LDCC32,.5X.6	Flash Memories		1.27 mm	70 Cel		64KX8	64K	0 Cel		YES	MATTE TIN		QUAD			R-PQCC-J32	3	5.5 V	3.55 mm	100000 Write/Erase Cycles		11.43 mm	Not Qualified			524288 bit	4.5 V			e3			NOR TYPE	.00001 Amp	13.97 mm	120 ns	12	NO
CAT28F512GI-90T	Onsemi	FLASH	INDUSTRIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS		30 mA	65536 words	5	NO	5	8	CHIP CARRIER	LDCC32,.5X.6	Flash Memories		1.27 mm	85 Cel		64KX8	64K	-40 Cel		YES	TIN		QUAD			R-PQCC-J32	3	5.5 V	3.55 mm	100000 Write/Erase Cycles		11.43 mm	Not Qualified			524288 bit	4.5 V			e3		260	NOR TYPE	.00001 Amp	13.97 mm	90 ns	12	NO
SST39SF040-55-4C-NHE	Microchip Technology	FLASH	COMMERCIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	4K	35 mA	524288 words	5	YES	5	8	CHIP CARRIER	LDCC32,.5X.6	Flash Memories	100	1.27 mm	70 Cel	3-STATE	512KX8	512K	0 Cel	128	YES	MATTE TIN		QUAD	1		R-PQCC-J32	3	5.5 V	3.556 mm	100000 Write/Erase Cycles		11.43 mm	Not Qualified			4194304 bit	4.5 V			e3	40	245	NOR TYPE	.0001 Amp	13.97 mm	55 ns	5	YES
SST39VF010-70-4C-NHE	Microchip Technology	FLASH	COMMERCIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	4K	30 mA	131072 words	3	YES	3/3.3	8	CHIP CARRIER	LDCC32,.5X.6	Flash Memories	100	1.27 mm	70 Cel	3-STATE	128KX8	128K	0 Cel	32	YES	Matte Tin (Sn)		QUAD	1		R-PQCC-J32	3	3.6 V	2.8448 mm	100000 Write/Erase Cycles		11.43 mm	Not Qualified			1048576 bit	2.7 V			e3	40	245	NOR TYPE	.000015 Amp	13.97 mm	70 ns	3	YES
AM29F010B-70JC	Spansion	FLASH	COMMERCIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	16K	40 mA	131072 words	5	YES	5	8	CHIP CARRIER	LDCC32,.5X.6	Flash Memories		1.27 mm	70 Cel		128KX8	128K	0 Cel	8	YES	TIN LEAD		QUAD			R-PQCC-J32	3	5.5 V	3.556 mm	1000000 Write/Erase Cycles		11.43 mm	Not Qualified			1048576 bit	4.5 V			e0		240	NOR TYPE	.000005 Amp	13.97 mm	70 ns	5	YES
AT17F16A-30JU	Microchip Technology	CONFIGURATION MEMORY		20	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	J BEND	SERIAL	SYNCHRONOUS		50 mA	16777216 words	3.3			1	CHIP CARRIER	LDCC20,.4SQ			1.27 mm	85 Cel		16MX1	16M	-40 Cel			MATTE TIN	YES	QUAD			R-PQCC-J20		3.63 V	4.572 mm	10000 Write/Erase Cycles	10 MHz	8.966 mm	Not Qualified			16777216 bit	2.97 V			e3			NOR TYPE	.003 Amp	8.966 mm		3.3
AT29C010A-70JI	Atmel	FLASH	INDUSTRIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	8K,112K,8K	50 mA	131072 words	5	YES	5	8	CHIP CARRIER	LDCC32,.5X.6	Flash Memories		1.27 mm	85 Cel		128KX8	128K	-40 Cel	1,1,1	NO	Tin/Lead (Sn/Pb)		QUAD			R-PQCC-J32	2	5.25 V	3.556 mm			11.43 mm	Not Qualified	10 ms	BOTTOM/TOP	1048576 bit	4.75 V			e0	30	225	NOR TYPE	.00003 Amp	13.97 mm	70 ns	5	YES
SST39VF010-70-4I-NHE	Microchip Technology	FLASH	INDUSTRIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	4K	30 mA	131072 words	3	YES	3/3.3	8	CHIP CARRIER	LDCC32,.5X.6	Flash Memories	100	1.27 mm	85 Cel	3-STATE	128KX8	128K	-40 Cel	32	YES	Matte Tin (Sn)		QUAD	1		R-PQCC-J32	3	3.6 V	2.8448 mm	100000 Write/Erase Cycles		11.43 mm	Not Qualified			1048576 bit	2.7 V			e3	40	245	NOR TYPE	.000015 Amp	13.97 mm	70 ns	3	YES
M28F512-12C6	STMicroelectronics	FLASH	INDUSTRIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS		30 mA	65536 words	5	NO	5	8	CHIP CARRIER	LDCC32,.5X.6	Flash Memories		1.27 mm	85 Cel	3-STATE	64KX8	64K	-40 Cel		YES	MATTE TIN		QUAD			R-PQCC-J32		5.5 V	3.56 mm	10000 Write/Erase Cycles		11.455 mm	Not Qualified			524288 bit	4.5 V	BULK ERASE		e3			NOR TYPE	.0001 Amp	13.995 mm	12 ns	12	NO
N28F020-150	Rochester Electronics	FLASH	COMMERCIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS			262144 words	5			8	CHIP CARRIER				1.27 mm	70 Cel		256KX8	256K	0 Cel			TIN LEAD		QUAD			R-PQCC-J32		5.5 V	3.56 mm			11.43 mm				2097152 bit	4.5 V	100000 ERASE/PROGRAM CYCLES		e0			NOR TYPE		13.97 mm	150 ns	12
AM29F010B-45JF	Intel	FLASH		32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	16K	40 mA	131072 words	5	YES		8	CHIP CARRIER	LDCC32,.5X.6		20	1.27 mm	85 Cel	3-STATE	128KX8	128K	-40 Cel	8	YES			QUAD			R-PQCC-J32		5.25 V	3.556 mm	1000000 Write/Erase Cycles		11.43 mm		.000045 ms		1048576 bit	4.75 V						NOR TYPE	.000005 Amp	13.97 mm	45 ns	5	YES
AT29C020-12JI	Atmel	FLASH	INDUSTRIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	256	40 mA	262144 words	5	YES	5	8	CHIP CARRIER	LDCC32,.5X.6	Flash Memories		1.27 mm	85 Cel	3-STATE	256KX8	256K	-40 Cel	1K	NO	TIN LEAD		QUAD			R-PQCC-J32	2	5.5 V	3.556 mm			11.43 mm	Not Qualified	10 ms	BOTTOM/TOP	2097152 bit	4.5 V			e0		225	NOR TYPE	.0003 Amp	13.97 mm	120 ns	5	YES
AT29C040A-90JI	Atmel	FLASH	INDUSTRIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	256	40 mA	524288 words	5	YES	5	8	CHIP CARRIER	LDCC32,.5X.6	Flash Memories		1.27 mm	85 Cel		512KX8	512K	-40 Cel	2K	NO	TIN LEAD		QUAD			R-PQCC-J32	2	5.5 V	3.556 mm			11.43 mm	Not Qualified	10 ms	BOTTOM/TOP	4194304 bit	4.5 V		256	e0		225	NOR TYPE	.0003 Amp	13.97 mm	90 ns	5	YES
AT29C1024-70JI	Atmel	FLASH	INDUSTRIAL	44	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS		60 mA	65536 words	5	YES	5	16	CHIP CARRIER	LDCC44,.7SQ	Flash Memories		1.27 mm	85 Cel	3-STATE	64KX16	64K	-40 Cel		NO	TIN LEAD		QUAD			S-PQCC-J44	2	5.5 V	4.57 mm	10000 Write/Erase Cycles		16.5862 mm	Not Qualified	10 ms		1048576 bit	4.5 V	AUTOMATIC WRITE; HARDWARE & SOFTWARE DATA PROTECTION	128	e0		225	NOR TYPE	.0002 Amp	16.5862 mm	70 ns	5	YES
AT29C256-12JC	Atmel	FLASH	COMMERCIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	64	50 mA	32768 words	5	YES	5	8	CHIP CARRIER	LDCC32,.5X.6	Flash Memories		1.27 mm	70 Cel	3-STATE	32KX8	32K	0 Cel	512	NO	Tin/Lead (Sn/Pb)		QUAD			R-PQCC-J32	2	5.5 V	3.556 mm			11.43 mm	Not Qualified	10 ms		262144 bit	4.5 V	AUTOMATIC WRITE; HARDWARE & SOFTWARE DATA PROTECTION	64	e0	12	225	NOR TYPE	.0003 Amp	13.97 mm	120 ns	5	YES
AT29C256-70JI	Atmel	FLASH	INDUSTRIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	64	50 mA	32768 words	5	YES	5	8	CHIP CARRIER	LDCC32,.5X.6	Flash Memories		1.27 mm	85 Cel	3-STATE	32KX8	32K	-40 Cel	512	NO	TIN LEAD		QUAD			R-PQCC-J32	2	5.25 V	3.556 mm			11.43 mm	Not Qualified	10 ms		262144 bit	4.75 V	AUTOMATIC WRITE; HARDWARE & SOFTWARE DATA PROTECTION	64	e0		225	NOR TYPE	.0003 Amp	13.97 mm	70 ns	5	YES
AT29C257-70JC	Atmel	FLASH	COMMERCIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS		50 mA	32768 words	5	YES	5	8	CHIP CARRIER	LDCC32,.5X.6	Flash Memories		1.27 mm	70 Cel	3-STATE	32KX8	32K	0 Cel		NO	TIN LEAD		QUAD			R-PQCC-J32	2	5.25 V	3.56 mm	10000 Write/Erase Cycles		11.43 mm	Not Qualified	10 ms		262144 bit	4.75 V	HARDWARE AND SOFTWARE DATA PROTECTION; 10000 CYCLES TYPICAL ENDURANCE	64	e0		225	NOR TYPE	.0003 Amp	13.97 mm	70 ns	5	YES
AT29C257-90JC	Atmel	FLASH	COMMERCIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS		50 mA	32768 words	5	YES	5	8	CHIP CARRIER	LDCC32,.5X.6	Flash Memories		1.27 mm	70 Cel	3-STATE	32KX8	32K	0 Cel		NO	Tin/Lead (Sn/Pb)		QUAD			R-PQCC-J32	2	5.5 V	3.56 mm	10000 Write/Erase Cycles		11.43 mm	Not Qualified	10 ms		262144 bit	4.5 V	HARDWARE AND SOFTWARE DATA PROTECTION; 10000 CYCLES TYPICAL ENDURANCE	64	e0	30	225	NOR TYPE	.0003 Amp	13.97 mm	90 ns	5	YES
AT29C512-70JI	Atmel	FLASH	INDUSTRIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	128	50 mA	65536 words	5	YES	5	8	CHIP CARRIER	LDCC32,.5X.6	Flash Memories		1.27 mm	85 Cel		64KX8	64K	-40 Cel	512	NO	TIN LEAD		QUAD			R-PQCC-J32	2	5.25 V	3.556 mm	10000 Write/Erase Cycles		11.43 mm	Not Qualified	10 ms		524288 bit	4.75 V		128	e0		225	NOR TYPE	.0003 Amp	13.97 mm	70 ns	5	YES
AT49F002AT-55JI	Atmel	FLASH	INDUSTRIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	25 mA	262144 words	5	YES	5	8	CHIP CARRIER	LDCC32,.5X.6	Flash Memories		1.27 mm	85 Cel		256KX8	256K	-40 Cel	1,2,1,3	YES	TIN LEAD		QUAD			R-PQCC-J32	2	5.5 V	3.556 mm	10000 Write/Erase Cycles		11.43 mm	Not Qualified		TOP	2097152 bit	4.5 V			e0		225	NOR TYPE	.0001 Amp	13.97 mm	55 ns	5	YES
AT29C1024-70JC	Atmel	FLASH	COMMERCIAL	44	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS		60 mA	65536 words	5	YES	5	16	CHIP CARRIER	LDCC44,.7SQ	Flash Memories		1.27 mm	70 Cel	3-STATE	64KX16	64K	0 Cel		NO	TIN LEAD		QUAD			S-PQCC-J44	2	5.5 V	4.57 mm	10000 Write/Erase Cycles		16.5862 mm	Not Qualified	10 ms		1048576 bit	4.5 V	AUTOMATIC WRITE; HARDWARE & SOFTWARE DATA PROTECTION	128	e0		225	NOR TYPE	.0002 Amp	16.5862 mm	70 ns	5	YES
AT29LV010A-15JC	Atmel	FLASH	COMMERCIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	128	15 mA	131072 words	3.3	YES	3.3	8	CHIP CARRIER	LDCC32,.5X.6	Flash Memories		1.27 mm	70 Cel	3-STATE	128KX8	128K	0 Cel	1K	NO	TIN LEAD		QUAD			R-PQCC-J32	2	3.6 V	3.56 mm			11.43 mm	Not Qualified	20 ms		1048576 bit	3 V			e0		225	NOR TYPE	.00004 Amp	13.97 mm	150 ns	3	YES
N28F001BX-B120	Intel	FLASH	COMMERCIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	8K,4K,112K	30 mA	131072 words	5	NO	5	8	CHIP CARRIER	LDCC32,.5X.6	Flash Memories		1.27 mm	70 Cel	3-STATE	128KX8	128K	0 Cel	1,2,1	YES	TIN LEAD		QUAD			R-PQCC-J32		5.5 V	3.55 mm	100000 Write/Erase Cycles		11.43 mm	Not Qualified		BOTTOM	1048576 bit	4.5 V	DEEP POWER-DOWN; BOTTOM BOOT BLOCK		e0			NOR TYPE	.000001 Amp	13.97 mm	120 ns	12	NO
N28F256A-120	Intel	FLASH	COMMERCIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS		30 mA	32768 words	5	NO	5	8	CHIP CARRIER	LDCC32,.5X.6	Flash Memories		1.27 mm	70 Cel	3-STATE	32KX8	32K	0 Cel		YES	TIN LEAD		QUAD			R-PQCC-J32		5.5 V	3.55 mm	10000 Write/Erase Cycles		11.43 mm	Not Qualified			262144 bit	4.5 V	100000 ERASE/PROGRAM CYCLES		e0			NOR TYPE	.0001 Amp	13.97 mm	120 ns	12	NO
AM29LV010B-90JC	Spansion	FLASH	COMMERCIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	16K	30 mA	131072 words	3	YES	3/3.3	8	CHIP CARRIER	LDCC32,.5X.6	Flash Memories	20	1.27 mm	70 Cel		128KX8	128K	0 Cel	8	YES	TIN LEAD		QUAD			R-PQCC-J32	3	3.6 V	3.556 mm	1000000 Write/Erase Cycles		11.43 mm	Not Qualified			1048576 bit	2.7 V	MINIMUM 1000K WRITE CYCLES; 20 YEAR DATA RETENTION		e0		260	NOR TYPE	.000005 Amp	13.97 mm	90 ns	3	YES

Flash Memory

Flash memory is a type of non-volatile computer memory that is commonly used in digital devices such as USB drives, solid-state drives, and digital cameras. It is a type of EEPROM (Electrically Erasable Programmable Read-Only Memory) that allows data to be erased and reprogrammed in blocks instead of one byte at a time. Flash memory uses a floating gate transistor to store data, which allows it to retain information even when the power is turned off.

Flash memory is widely used in digital devices because of its high capacity, small size, and fast access times. It is also more durable than other types of memory, such as hard disk drives, because it has no moving parts. This makes it ideal for use in portable devices that may be subject to physical shock or vibration.

There are two types of flash memory: NOR flash and NAND flash. NOR flash is faster than NAND flash, but it has lower density and higher cost per bit. NOR flash is typically used for code storage, such as firmware or boot code, because it provides faster access times. NAND flash has higher density and lower cost per bit, which makes it ideal for data storage applications.

Flash memory has a limited lifespan, as it can only be erased and reprogrammed a limited number of times. This is because the process of erasing and reprogramming the memory causes wear and tear on the floating gate transistor. However, modern flash memory devices have a sophisticated wear-leveling algorithm that distributes writes evenly across the memory, which extends the lifespan of the device.