QCCJ Flash Memory 2,332

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Terminal Form	Parallel or Serial	Operating Mode	Sector Size (Words)	Maximum Supply Current	No. of Words	Nominal Supply Voltage / Vsup (V)	Toggle Bit	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Minimum Data Retention Time	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	No. of Sectors/Size	Command User Interface	Terminal Finish	Terminal Position	No. of Ports	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Endurance	Width	Qualification	Maximum Write Cycle Time (tWC)	Boot Block	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	Page Size (words)	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Type	Maximum Standby Current	Length	Maximum Access Time	Programming Voltage (V)	Data Polling
AT29BV010A-12JU	Atmel	FLASH	INDUSTRIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	8K,112K,8K	15 mA	131072 words	3	YES	3/3.3	8	CHIP CARRIER	LDCC32,.5X.6	Flash Memories		1.27 mm	85 Cel		128KX8	128K	-40 Cel	1,1,1	NO	MATTE TIN	QUAD		R-PQCC-J32	2	3.6 V	3.556 mm		11.43 mm	Not Qualified	20 ms	BOTTOM/TOP	1048576 bit	2.7 V			e3		245	NOR TYPE	.00005 Amp	13.97 mm	120 ns	2.7	YES
AT29C010A-70JCT/R	Atmel	FLASH	COMMERCIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS			131072 words	5			8	CHIP CARRIER				1.27 mm	70 Cel	3-STATE	128KX8	128K	0 Cel			TIN LEAD	QUAD		R-PQCC-J32	2	5.25 V	3.55 mm		11.43 mm	Not Qualified			1048576 bit	4.75 V			e0			NOR TYPE		13.97 mm	70 ns	5
AT29C256-25JC	Atmel	FLASH	COMMERCIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	64	50 mA	32768 words	5	YES	5	8	CHIP CARRIER	LDCC32,.5X.6	Flash Memories		1.27 mm	70 Cel	3-STATE	32KX8	32K	0 Cel	512	NO	TIN LEAD	QUAD		R-PQCC-J32	2	5.5 V	3.55 mm		11.43 mm	Not Qualified			262144 bit	4.5 V	AUTOMATIC WRITE; HARDWARE & SOFTWARE DATA PROTECTION	64	e0		225	NOR TYPE	.0003 Amp	13.97 mm	250 ns	5	YES
AT29C256-70JC	Atmel	FLASH	COMMERCIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	64	50 mA	32768 words	5	YES	5	8	CHIP CARRIER	LDCC32,.5X.6	Flash Memories		1.27 mm	70 Cel	3-STATE	32KX8	32K	0 Cel	512	NO	TIN LEAD	QUAD		R-PQCC-J32	2	5.25 V	3.556 mm		11.43 mm	Not Qualified	10 ms		262144 bit	4.75 V	AUTOMATIC WRITE; HARDWARE & SOFTWARE DATA PROTECTION	64	e0		225	NOR TYPE	.0003 Amp	13.97 mm	70 ns	5	YES
AT29C257-70JCT/R	Atmel	FLASH	COMMERCIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS			32768 words	5			8	CHIP CARRIER				1.27 mm	70 Cel	3-STATE	32KX8	32K	0 Cel			TIN LEAD	QUAD		R-PQCC-J32	2	5.25 V	3.55 mm		11.43 mm	Not Qualified			262144 bit	4.75 V			e0			NOR TYPE		13.97 mm	70 ns	5
AT29C512-70JC	Atmel	FLASH	COMMERCIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	128	50 mA	65536 words	5	YES	5	8	CHIP CARRIER	LDCC32,.5X.6	Flash Memories		1.27 mm	70 Cel	3-STATE	64KX8	64K	0 Cel	512	NO	TIN LEAD	QUAD		R-PQCC-J32	2	5.25 V	3.556 mm	10000 Write/Erase Cycles	11.43 mm	Not Qualified	10 ms		524288 bit	4.75 V	AUTOMATIC WRITE; HARDWARE & SOFTWARE DATA PROTECTION	128	e0		225	NOR TYPE	.0001 Amp	13.97 mm	70 ns	5	YES
AT49F002N-55JI	Atmel	FLASH	INDUSTRIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	16K,8K,96K,128K	90 mA	262144 words	5	YES	5	8	CHIP CARRIER	LDCC32,.5X.6	Flash Memories		1.27 mm	85 Cel		256KX8	256K	-40 Cel	1,2,1,1	YES	TIN LEAD	QUAD		R-PQCC-J32	2	5.5 V	3.55 mm		11.43 mm	Not Qualified		BOTTOM	2097152 bit	4.5 V			e0		225	NOR TYPE	.0003 Amp	13.97 mm	55 ns	5	YES
AT49LV001-90JC	Atmel	FLASH	COMMERCIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	50 mA	131072 words	3.3	YES	3.3	8	CHIP CARRIER	LDCC32,.5X.6	Flash Memories		1.27 mm	70 Cel		128KX8	128K	0 Cel	1,2,1,1	YES	TIN LEAD	QUAD		R-PQCC-J32	2	3.6 V	3.556 mm		11.43 mm	Not Qualified		BOTTOM	1048576 bit	3 V			e0		225	NOR TYPE	.00005 Amp	13.97 mm	90 ns	3	YES
M29F002BT70K6E	STMicroelectronics	FLASH	INDUSTRIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	20 mA	262144 words	5	YES	5	8	CHIP CARRIER	LDCC32,.5X.6	Flash Memories		1.27 mm	85 Cel		256KX8	256K	-40 Cel	1,2,1,3	YES	TIN	QUAD		R-PQCC-J32		5.5 V	3.56 mm	100000 Write/Erase Cycles	11.43 mm	Not Qualified		TOP	2097152 bit	4.5 V	TOP BOOT BLOCK		e3			NOR TYPE	.0001 Amp	13.97 mm	70 ns	5	YES
N28F001BX-T120	Intel	FLASH	COMMERCIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	8K,4K,112K	30 mA	131072 words	5	NO	5	8	CHIP CARRIER	LDCC32,.5X.6	Flash Memories		1.27 mm	70 Cel	3-STATE	128KX8	128K	0 Cel	1,2,1	YES	TIN LEAD	QUAD		R-PQCC-J32		5.5 V	3.55 mm	100000 Write/Erase Cycles	11.43 mm	Not Qualified		TOP	1048576 bit	4.5 V	DEEP POWER-DOWN; TOP BOOT BLOCK		e0			NOR TYPE	.000001 Amp	13.97 mm	120 ns	12	NO
SST39VF020-70-4I-NHE	Microchip Technology	FLASH	INDUSTRIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	4K	30 mA	262144 words	3	YES	3/3.3	8	CHIP CARRIER	LDCC32,.5X.6	Flash Memories	100	1.27 mm	85 Cel	3-STATE	256KX8	256K	-40 Cel	64	YES	Matte Tin (Sn)	QUAD	1	R-PQCC-J32	3	3.6 V	2.8448 mm	100000 Write/Erase Cycles	11.43 mm	Not Qualified			2097152 bit	2.7 V			e3	40	245	NOR TYPE	.000015 Amp	13.97 mm	70 ns	3	YES
SST39SF010A-55-4C-NHE-T	Microchip Technology	FLASH	COMMERCIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	4K	35 mA	131072 words	5	YES	5	8	CHIP CARRIER	LDCC32,.5X.6	Flash Memories	100	1.27 mm	70 Cel	3-STATE	128KX8	128K	0 Cel	32	YES		QUAD	1	R-PQCC-J32		5.5 V	3.556 mm	100000 Write/Erase Cycles	11.43 mm	Not Qualified			1048576 bit	4.5 V						NOR TYPE	.0001 Amp	13.97 mm	55 ns	5	YES
SST39SF020A-70-4I-NHE	Microchip Technology	FLASH	INDUSTRIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	4K	35 mA	262144 words	5	YES	5	8	CHIP CARRIER	LDCC32,.5X.6	Flash Memories	100	1.27 mm	85 Cel	3-STATE	256KX8	256K	-40 Cel	64	YES	Matte Tin (Sn)	QUAD	1	R-PQCC-J32	3	5.5 V	3.556 mm	100000 Write/Erase Cycles	11.43 mm	Not Qualified			2097152 bit	4.5 V			e3	40	245	NOR TYPE	.0001 Amp	13.97 mm	70 ns	5	YES
TMS28F210-15C4FNE4	Texas Instruments	FLASH	INDUSTRIAL	44	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	MOS	J BEND	PARALLEL	ASYNCHRONOUS		50 mA	65536 words	5	NO	5	16	CHIP CARRIER	LDCC44,.7SQ	Flash Memories		1.27 mm	85 Cel	3-STATE	64KX16	64K	-40 Cel		YES		QUAD		S-PQCC-J44		5.5 V	4.57 mm	10000 Write/Erase Cycles	16.5862 mm	Not Qualified			1048576 bit	4.5 V	BULK ERASE			NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.0001 Amp	16.5862 mm	150 ns	12	NO
TMS28F512A-15C4FMQ4	Texas Instruments	FLASH	AUTOMOTIVE	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS		30 mA	65536 words	5	NO	5	8	CHIP CARRIER	LDCC32,.5X.6	Flash Memories		1.27 mm	125 Cel	3-STATE	64KX8	64K	-40 Cel		YES		QUAD		R-PQCC-J32		5.5 V	3.56 mm	10000 Write/Erase Cycles	11.43 mm	Not Qualified			524288 bit	4.5 V				NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.0001 Amp	13.97 mm	150 ns	12	NO
TMS29F040-90C5FME	Texas Instruments	FLASH	INDUSTRIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	64K	60 mA	524288 words	5	YES	5	8	CHIP CARRIER	LDCC32,.5X.6	Flash Memories		1.27 mm	85 Cel	3-STATE	512KX8	512K	-40 Cel	8	YES		QUAD		R-PQCC-J32		5.5 V	3.56 mm	100000 Write/Erase Cycles	11.43 mm	Not Qualified			4194304 bit	4.5 V	100000 PROGRAM/ERASE CYCLES			NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.0001 Amp	13.97 mm	90 ns	5	YES
TMS28F512A-12C4FMQ	Texas Instruments	FLASH	AUTOMOTIVE	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS		30 mA	65536 words	5	NO	5	8	CHIP CARRIER	LDCC32,.5X.6	Flash Memories		1.27 mm	125 Cel	3-STATE	64KX8	64K	-40 Cel		YES		QUAD		R-PQCC-J32		5.5 V	3.56 mm	10000 Write/Erase Cycles	11.43 mm	Not Qualified			524288 bit	4.5 V						NOR TYPE	.0001 Amp	13.97 mm	120 ns	12	NO
TMS28F010B-90C5FML4	Texas Instruments	FLASH	COMMERCIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS		30 mA	131072 words	5	NO	5	8	CHIP CARRIER	LDCC32,.5X.6	Flash Memories		1.27 mm	70 Cel	3-STATE	128KX8	128K	0 Cel		YES		QUAD		R-PQCC-J32		5.5 V	3.56 mm	100000 Write/Erase Cycles	11.43 mm	Not Qualified			1048576 bit	4.5 V				NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.0001 Amp	13.97 mm	90 ns	12	NO
TMS28F512-17C3FML	Texas Instruments	FLASH	COMMERCIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS		30 mA	65536 words	5	NO	5	8	CHIP CARRIER	LDCC32,.5X.6	Flash Memories		1.27 mm	70 Cel		64KX8	64K	0 Cel		YES		QUAD		R-PQCC-J32		5.5 V	3.56 mm	1000 Write/Erase Cycles	11.43 mm	Not Qualified			524288 bit	4.5 V	BULK ERASE			NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.0001 Amp	13.97 mm	170 ns	12	NO
TMS29F002RB70CFML	Texas Instruments	FLASH	COMMERCIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS			262144 words	5			8	CHIP CARRIER				1.27 mm	70 Cel		256KX8	256K	0 Cel				QUAD		R-PQCC-J32		5.5 V	3.56 mm		11.43 mm	Not Qualified			2097152 bit	4.5 V	100000 PROGRAM/ERASE CYCLES; TTL COMPATIBLE I/O					NOR TYPE		13.97 mm	70 ns	5
TMS28F512-17C2FML	Texas Instruments	FLASH	COMMERCIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS		30 mA	65536 words	5	NO	5	8	CHIP CARRIER	LDCC32,.5X.6	Flash Memories		1.27 mm	70 Cel		64KX8	64K	0 Cel		YES		QUAD		R-PQCC-J32		5.5 V	3.56 mm	100 Write/Erase Cycles	11.43 mm	Not Qualified			524288 bit	4.5 V	BULK ERASE			NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.0001 Amp	13.97 mm	170 ns	12	NO
TMS28F512A-15C3FML	Texas Instruments	FLASH	COMMERCIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS		30 mA	65536 words	5	NO	5	8	CHIP CARRIER	LDCC32,.5X.6	Flash Memories		1.27 mm	70 Cel	3-STATE	64KX8	64K	0 Cel		YES		QUAD		R-PQCC-J32		5.5 V	3.56 mm	1000 Write/Erase Cycles	11.43 mm	Not Qualified			524288 bit	4.5 V				NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.0001 Amp	13.97 mm	150 ns	12	NO
TMS29F010-70C5FME	Texas Instruments	FLASH	INDUSTRIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	16K	50 mA	131072 words	5	YES	5	8	CHIP CARRIER	LDCC32,.5X.6	Flash Memories		1.27 mm	85 Cel	3-STATE	128KX8	128K	-40 Cel	8	YES		QUAD		R-PQCC-J32		5.5 V	3.56 mm	100000 Write/Erase Cycles	11.43 mm	Not Qualified			1048576 bit	4.5 V	100000 PROGRAM/ERASE CYCLES			NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.0001 Amp	13.97 mm	70 ns	5	YES
TMS28F512-12C4FMQ4	Texas Instruments	FLASH	AUTOMOTIVE	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS		30 mA	65536 words	5	NO	5	8	CHIP CARRIER	LDCC32,.5X.6	Flash Memories		1.27 mm	125 Cel		64KX8	64K	-40 Cel		YES		QUAD		R-PQCC-J32		5.5 V	3.56 mm	10000 Write/Erase Cycles	11.43 mm	Not Qualified			524288 bit	4.5 V	BULK ERASE			NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.0001 Amp	13.97 mm	120 ns	12	NO
TMS28F010-17C4FME	Texas Instruments	FLASH	INDUSTRIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS		30 mA	131072 words	5	NO	5	8	CHIP CARRIER	LDCC32,.5X.6	Flash Memories		1.27 mm	85 Cel		128KX8	128K	-40 Cel		YES		QUAD		R-PQCC-J32		5.5 V	3.56 mm	10000 Write/Erase Cycles	11.43 mm	Not Qualified			1048576 bit	4.5 V	BULK ERASE			NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.0001 Amp	13.97 mm	170 ns	12	NO
TMS28F210-17C2FNQ	Texas Instruments	FLASH	AUTOMOTIVE	44	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS		50 mA	65536 words	5	NO	5	16	CHIP CARRIER	LDCC44,.7SQ	Flash Memories		1.27 mm	125 Cel		64KX16	64K	-40 Cel		YES		QUAD		S-PQCC-J44		5.5 V	4.57 mm	100 Write/Erase Cycles	16.5862 mm	Not Qualified			1048576 bit	4.5 V	BULK ERASE			NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.0001 Amp	16.5862 mm	170 ns	12	NO
TMS28F010B-10C4FME4	Texas Instruments	FLASH	INDUSTRIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS		30 mA	131072 words	5	NO	5	8	CHIP CARRIER	LDCC32,.5X.6	Flash Memories		1.27 mm	85 Cel	3-STATE	128KX8	128K	-40 Cel		YES		QUAD		R-PQCC-J32		5.5 V	3.56 mm	10000 Write/Erase Cycles	11.43 mm	Not Qualified			1048576 bit	4.5 V				NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.0001 Amp	13.97 mm	100 ns	12	NO
TMS28F020-15C5FME4	Texas Instruments	FLASH	INDUSTRIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS		30 mA	262144 words	5	NO	5	8	CHIP CARRIER	LDCC32,.5X.6	Flash Memories		1.27 mm	85 Cel	3-STATE	256KX8	256K	-40 Cel		YES		QUAD		R-PQCC-J32		5.5 V	3.56 mm	100000 Write/Erase Cycles	11.43 mm	Not Qualified			2097152 bit	4.5 V				NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.0001 Amp	13.97 mm	150 ns	12	NO
TMS29F040-70C5FME	Texas Instruments	FLASH	INDUSTRIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	64K	60 mA	524288 words	5	YES	5	8	CHIP CARRIER	LDCC32,.5X.6	Flash Memories		1.27 mm	85 Cel	3-STATE	512KX8	512K	-40 Cel	8	YES		QUAD		R-PQCC-J32		5.5 V	3.56 mm	100000 Write/Erase Cycles	11.43 mm	Not Qualified			4194304 bit	4.5 V	100000 PROGRAM/ERASE CYCLES			NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.0001 Amp	13.97 mm	70 ns	5	YES
TMS28F010-12C3FMQ	Texas Instruments	FLASH	AUTOMOTIVE	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS		30 mA	131072 words	5	NO	5	8	CHIP CARRIER	LDCC32,.5X.6	Flash Memories		1.27 mm	125 Cel		128KX8	128K	-40 Cel		YES		QUAD		R-PQCC-J32		5.5 V	3.56 mm	1000 Write/Erase Cycles	11.43 mm	Not Qualified			1048576 bit	4.5 V	BULK ERASE			NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.0001 Amp	13.97 mm	120 ns	12	NO
TMS28F512-15C3FML4	Texas Instruments	FLASH	COMMERCIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS		30 mA	65536 words	5	NO	5	8	CHIP CARRIER	LDCC32,.5X.6	Flash Memories		1.27 mm	70 Cel		64KX8	64K	0 Cel		YES		QUAD		R-PQCC-J32		5.5 V	3.56 mm	1000 Write/Erase Cycles	11.43 mm	Not Qualified			524288 bit	4.5 V	BULK ERASE			NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.0001 Amp	13.97 mm	150 ns	12	NO
TMS29F512-100FM	Texas Instruments	FLASH	COMMERCIAL	32	QCCJ	RECTANGULAR	CERAMIC	YES		CMOS	J BEND	PARALLEL		256K		65536 words	5	NO	5	8	CHIP CARRIER	LDCC32,.5X.6	Flash Memories		1.27 mm	70 Cel		64KX8	64K	0 Cel	2	NO		QUAD		R-XQCC-J32						Not Qualified			524288 bit			128		NOT SPECIFIED	NOT SPECIFIED	NOR TYPE			100 ns		YES
TMS28F010-12C4FMQ4	Texas Instruments	FLASH	AUTOMOTIVE	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS		30 mA	131072 words	5	NO	5	8	CHIP CARRIER	LDCC32,.5X.6	Flash Memories		1.27 mm	125 Cel		128KX8	128K	-40 Cel		YES		QUAD		R-PQCC-J32		5.5 V	3.56 mm	10000 Write/Erase Cycles	11.43 mm	Not Qualified			1048576 bit	4.5 V	BULK ERASE			NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.0001 Amp	13.97 mm	120 ns	12	NO
TMS28F512-12C3FMQ4	Texas Instruments	FLASH	AUTOMOTIVE	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS		30 mA	65536 words	5	NO	5	8	CHIP CARRIER	LDCC32,.5X.6	Flash Memories		1.27 mm	125 Cel		64KX8	64K	-40 Cel		YES		QUAD		R-PQCC-J32		5.5 V	3.56 mm	1000 Write/Erase Cycles	11.43 mm	Not Qualified			524288 bit	4.5 V	BULK ERASE			NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.0001 Amp	13.97 mm	120 ns	12	NO
TMS28F210-17C3FNQ	Texas Instruments	FLASH	AUTOMOTIVE	44	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS		50 mA	65536 words	5	NO	5	16	CHIP CARRIER	LDCC44,.7SQ	Flash Memories		1.27 mm	125 Cel	3-STATE	64KX16	64K	-40 Cel		YES		QUAD		S-PQCC-J44		5.5 V	4.57 mm	1000 Write/Erase Cycles	16.5862 mm	Not Qualified			1048576 bit	4.5 V	BULK ERASE			NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.0001 Amp	16.5862 mm	170 ns	12	NO
TMS29F259-170FML	Texas Instruments	FLASH	COMMERCIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS		15 mA	32768 words	5	NO	5	8	CHIP CARRIER	LDCC32,.5X.6	Flash Memories		1.27 mm	70 Cel	3-STATE	32KX8	32K	0 Cel		NO		QUAD		R-PQCC-J32		5.25 V	3.56 mm		11.43 mm	Not Qualified			262144 bit	4.75 V		64		NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.003 Amp	13.97 mm	170 ns	5	YES
TMS28F020-17C5FMQ	Texas Instruments	FLASH	AUTOMOTIVE	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS		30 mA	262144 words	5	NO	5	8	CHIP CARRIER	LDCC32,.5X.6	Flash Memories		1.27 mm	125 Cel	3-STATE	256KX8	256K	-40 Cel		YES		QUAD		R-PQCC-J32		5.5 V	3.56 mm	100000 Write/Erase Cycles	11.43 mm	Not Qualified			2097152 bit	4.5 V				NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.0001 Amp	13.97 mm	170 ns	12	NO
TMS28F010-12C4FMQ	Texas Instruments	FLASH	AUTOMOTIVE	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS		30 mA	131072 words	5	NO	5	8	CHIP CARRIER	LDCC32,.5X.6	Flash Memories		1.27 mm	125 Cel		128KX8	128K	-40 Cel		YES		QUAD		R-PQCC-J32		5.5 V	3.56 mm	10000 Write/Erase Cycles	11.43 mm	Not Qualified			1048576 bit	4.5 V	BULK ERASE			NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.0001 Amp	13.97 mm	120 ns	12	NO
TMS28F010B-15C4FMQ4	Texas Instruments	FLASH	AUTOMOTIVE	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS		30 mA	131072 words	5	NO	5	8	CHIP CARRIER	LDCC32,.5X.6	Flash Memories		1.27 mm	125 Cel	3-STATE	128KX8	128K	-40 Cel		YES		QUAD		R-PQCC-J32		5.5 V	3.56 mm	10000 Write/Erase Cycles	11.43 mm	Not Qualified			1048576 bit	4.5 V				NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.0001 Amp	13.97 mm	150 ns	12	NO
TMS28F210-17C4FNL	Texas Instruments	FLASH	COMMERCIAL	44	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS		50 mA	65536 words	5	NO	5	16	CHIP CARRIER	LDCC44,.7SQ	Flash Memories		1.27 mm	70 Cel	3-STATE	64KX16	64K	0 Cel		YES		QUAD		S-PQCC-J44		5.5 V	4.57 mm	10000 Write/Erase Cycles	16.5862 mm	Not Qualified			1048576 bit	4.5 V	BULK ERASE			NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.0001 Amp	16.5862 mm	170 ns	12	NO
TMS28F010A-12C4FME4	Texas Instruments	FLASH	INDUSTRIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	MOS	J BEND	PARALLEL	ASYNCHRONOUS			131072 words	5			8	CHIP CARRIER				1.27 mm	85 Cel	3-STATE	128KX8	128K	-40 Cel				QUAD		R-PQCC-J32		5.5 V	3.56 mm		11.43 mm	Not Qualified			1048576 bit	4.5 V	10000 PROGRAM/ERASE CYCLES					NOR TYPE		13.97 mm	120 ns	12
TMS28F010B-12C4FML	Texas Instruments	FLASH	COMMERCIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS		30 mA	131072 words	5	NO	5	8	CHIP CARRIER	LDCC32,.5X.6	Flash Memories		1.27 mm	70 Cel	3-STATE	128KX8	128K	0 Cel		YES		QUAD		R-PQCC-J32		5.5 V	3.56 mm	10000 Write/Erase Cycles	11.43 mm	Not Qualified			1048576 bit	4.5 V						NOR TYPE	.0001 Amp	13.97 mm	120 ns	12	NO
TMS28F020-12C4FML	Texas Instruments	FLASH	COMMERCIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS		30 mA	262144 words	5	NO	5	8	CHIP CARRIER	LDCC32,.5X.6	Flash Memories		1.27 mm	70 Cel	3-STATE	256KX8	256K	0 Cel		YES		QUAD		R-PQCC-J32		5.5 V	3.56 mm	10000 Write/Erase Cycles	11.43 mm	Not Qualified			2097152 bit	4.5 V				NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.0001 Amp	13.97 mm	120 ns	12	NO
TMS28F010B-10C5FME4	Texas Instruments	FLASH	INDUSTRIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS		30 mA	131072 words	5	NO	5	8	CHIP CARRIER	LDCC32,.5X.6	Flash Memories		1.27 mm	85 Cel	3-STATE	128KX8	128K	-40 Cel		YES		QUAD		R-PQCC-J32		5.5 V	3.56 mm	100000 Write/Erase Cycles	11.43 mm	Not Qualified			1048576 bit	4.5 V				NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.0001 Amp	13.97 mm	100 ns	12	NO
TMS29F512-150FM	Texas Instruments	FLASH	COMMERCIAL	32	QCCJ	RECTANGULAR	CERAMIC	YES		CMOS	J BEND	PARALLEL		256K		65536 words	5	NO	5	8	CHIP CARRIER	LDCC32,.5X.6	Flash Memories		1.27 mm	70 Cel		64KX8	64K	0 Cel	2	NO		QUAD		R-XQCC-J32						Not Qualified			524288 bit			128		NOT SPECIFIED	NOT SPECIFIED	NOR TYPE			150 ns		YES
TMS28F210-15C4FNL	Texas Instruments	FLASH	COMMERCIAL	44	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS		50 mA	65536 words	5	NO	5	16	CHIP CARRIER	LDCC44,.7SQ	Flash Memories		1.27 mm	70 Cel	3-STATE	64KX16	64K	0 Cel		YES		QUAD		S-PQCC-J44		5.5 V	4.57 mm	10000 Write/Erase Cycles	16.5862 mm	Not Qualified			1048576 bit	4.5 V	BULK ERASE			NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.0001 Amp	16.5862 mm	150 ns	12	NO
TMS28F010-15C2FMQ	Texas Instruments	FLASH	AUTOMOTIVE	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS		30 mA	131072 words	5	NO	5	8	CHIP CARRIER	LDCC32,.5X.6	Flash Memories		1.27 mm	125 Cel		128KX8	128K	-40 Cel		YES		QUAD		R-PQCC-J32		5.5 V	3.56 mm	100 Write/Erase Cycles	11.43 mm	Not Qualified			1048576 bit	4.5 V	BULK ERASE			NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.0001 Amp	13.97 mm	150 ns	12	NO
TMS28F010-17C3FMQ4	Texas Instruments	FLASH	AUTOMOTIVE	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS		30 mA	131072 words	5	NO	5	8	CHIP CARRIER	LDCC32,.5X.6	Flash Memories		1.27 mm	125 Cel		128KX8	128K	-40 Cel		YES		QUAD		R-PQCC-J32		5.5 V	3.56 mm	1000 Write/Erase Cycles	11.43 mm	Not Qualified			1048576 bit	4.5 V	BULK ERASE			NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.0001 Amp	13.97 mm	170 ns	12	NO

Flash Memory

Flash memory is a type of non-volatile computer memory that is commonly used in digital devices such as USB drives, solid-state drives, and digital cameras. It is a type of EEPROM (Electrically Erasable Programmable Read-Only Memory) that allows data to be erased and reprogrammed in blocks instead of one byte at a time. Flash memory uses a floating gate transistor to store data, which allows it to retain information even when the power is turned off.

Flash memory is widely used in digital devices because of its high capacity, small size, and fast access times. It is also more durable than other types of memory, such as hard disk drives, because it has no moving parts. This makes it ideal for use in portable devices that may be subject to physical shock or vibration.

There are two types of flash memory: NOR flash and NAND flash. NOR flash is faster than NAND flash, but it has lower density and higher cost per bit. NOR flash is typically used for code storage, such as firmware or boot code, because it provides faster access times. NAND flash has higher density and lower cost per bit, which makes it ideal for data storage applications.

Flash memory has a limited lifespan, as it can only be erased and reprogrammed a limited number of times. This is because the process of erasing and reprogramming the memory causes wear and tear on the floating gate transistor. However, modern flash memory devices have a sophisticated wear-leveling algorithm that distributes writes evenly across the memory, which extends the lifespan of the device.