TBGA Flash Memory 2,400+

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Terminal Form	Parallel or Serial	Operating Mode	Sector Size (Words)	Maximum Supply Current	No. of Words	Nominal Supply Voltage / Vsup (V)	Toggle Bit	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Alternate Memory Width	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Organization	No. of Words Code	Minimum Operating Temperature	No. of Sectors/Size	Command User Interface	Terminal Finish	Ready or Busy	Terminal Position	JESD-30 Code	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Width	Qualification	Boot Block	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	Page Size (words)	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Type	Maximum Standby Current	Length	Common Flash Interface	Maximum Access Time	Programming Voltage (V)	Data Polling
M58LT128HSB8ZA6	STMicroelectronics	FLASH	INDUSTRIAL	64	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	16K,64K	53 mA	8388608 words	1.8	NO	1.8,3/3.3	16	GRID ARRAY, THIN PROFILE	BGA64,8X8,40		Flash Memories	1 mm	85 Cel	8MX16	8M	-40 Cel	4,127	YES	TIN LEAD		BOTTOM	R-PBGA-B64	2 V	1.2 mm	10 mm	Not Qualified	BOTTOM	134217728 bit	1.7 V	SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE	4	e0			NOR TYPE	.000075 Amp	13 mm	YES	85 ns	1.8	NO
M58LSW32B150ZA1T	STMicroelectronics	FLASH	COMMERCIAL	80	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS			1048576 words	3			32	GRID ARRAY, THIN PROFILE		16		1 mm	70 Cel	1MX32	1M	0 Cel					BOTTOM	R-PBGA-B80	3.6 V	1.2 mm	10 mm	Not Qualified		33554432 bit	2.7 V	SYNCHRONOUS MODE OF OPERATION ALSO POSSIBLE					NOR TYPE		13 mm		150 ns	3
M58LSW32B120ZA6T	STMicroelectronics	FLASH	INDUSTRIAL	80	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	512K	50 mA	1048576 words	3	NO	2/3.3,3/3.3	32	GRID ARRAY, THIN PROFILE	BGA80,8X10,40	16	Flash Memories	1 mm	85 Cel	1MX32	1M	-40 Cel	64	YES	TIN SILVER COPPER	YES	BOTTOM	R-PBGA-B80	3.6 V	1.2 mm	10 mm	Not Qualified		33554432 bit	2.7 V	SYNCHRONOUS MODE OF OPERATION ALSO POSSIBLE		e1			NOR TYPE	.000001 Amp	13 mm	YES	120 ns	3	NO
M58LT256JSB8ZA6	STMicroelectronics	FLASH	COMMERCIAL EXTENDED	64	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	16K,64K	77 mA	16777216 words	1.8	NO	1.8,3/3.3	16	GRID ARRAY, THIN PROFILE	BGA64,8X8,40		Flash Memories	1 mm	85 Cel	16MX16	16M	-25 Cel	4,255	YES	TIN LEAD		BOTTOM	R-PBGA-B64	2 V	1.2 mm	10 mm	Not Qualified	BOTTOM	268435456 bit	1.7 V	SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE	8	e0			NOR TYPE	.00011 Amp	13 mm	YES	85 ns	1.8	NO
M58LT256JSB8ZA6F	STMicroelectronics	FLASH	COMMERCIAL EXTENDED	64	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	16K,64K	77 mA	16777216 words	1.8	NO	1.8,3/3.3	16	GRID ARRAY, THIN PROFILE	BGA64,8X8,40		Flash Memories	1 mm	85 Cel	16MX16	16M	-25 Cel	4,255	YES			BOTTOM	R-PBGA-B64	2 V	1.2 mm	10 mm	Not Qualified	BOTTOM	268435456 bit	1.7 V	SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE	8		40	260	NOR TYPE	.00011 Amp	13 mm	YES	85 ns	1.8	NO
M58LT256GB1ZA5	STMicroelectronics	FLASH	OTHER	64	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	16K,64K	47 mA	16777216 words	1.8	NO	1.8,3/3.3	16	GRID ARRAY, THIN PROFILE	BGA64,8X8,40		Flash Memories	1 mm	85 Cel	16MX16	16M	-25 Cel	4,255	YES	TIN LEAD		BOTTOM	R-PBGA-B64	2 V	1.2 mm	10 mm	Not Qualified	BOTTOM	268435456 bit	1.7 V		8	e0			NOR TYPE	.000005 Amp	13 mm	YES	110 ns	1.8	NO
M58LT256GB1ZA5F	STMicroelectronics	FLASH	OTHER	64	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	16K,64K	47 mA	16777216 words	1.8	NO	1.8,3/3.3	16	GRID ARRAY, THIN PROFILE	BGA64,8X8,40		Flash Memories	1 mm	85 Cel	16MX16	16M	-25 Cel	4,255	YES			BOTTOM	R-PBGA-B64	2 V	1.2 mm	10 mm	Not Qualified	BOTTOM	268435456 bit	1.7 V		8		40	260	NOR TYPE	.000005 Amp	13 mm	YES	110 ns	1.8	NO
M58LSW32A150ZA6T	STMicroelectronics	FLASH	INDUSTRIAL	64	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS			2097152 words	3			16	GRID ARRAY, THIN PROFILE				1 mm	85 Cel	2MX16	2M	-40 Cel					BOTTOM	R-PBGA-B64	3.6 V	1.2 mm	10 mm	Not Qualified		33554432 bit	2.7 V	SYNCHRONOUS MODE OF OPERATION ALSO POSSIBLE					NOR TYPE		13 mm		150 ns	3
M58LT256JST8ZA6	STMicroelectronics	FLASH	COMMERCIAL EXTENDED	64	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	16K,64K	77 mA	16777216 words	1.8	NO	1.8,3/3.3	16	GRID ARRAY, THIN PROFILE	BGA64,8X8,40		Flash Memories	1 mm	85 Cel	16MX16	16M	-25 Cel	4,255	YES	TIN LEAD		BOTTOM	R-PBGA-B64	2 V	1.2 mm	10 mm	Not Qualified	TOP	268435456 bit	1.7 V	SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE	8	e0			NOR TYPE	.00011 Amp	13 mm	YES	85 ns	1.8	NO
M58LT128HSB8ZA6E	STMicroelectronics	FLASH	INDUSTRIAL	64	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	16K,64K	53 mA	8388608 words	1.8	NO	1.8,3/3.3	16	GRID ARRAY, THIN PROFILE	BGA64,8X8,40		Flash Memories	1 mm	85 Cel	8MX16	8M	-40 Cel	4,127	YES			BOTTOM	R-PBGA-B64	2 V	1.2 mm	10 mm	Not Qualified	BOTTOM	134217728 bit	1.7 V	SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE	4		40	260	NOR TYPE	.000075 Amp	13 mm	YES	85 ns	1.8	NO
M58LW064D11ZA6T	STMicroelectronics	FLASH	INDUSTRIAL	64	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	128K	30 mA	4194304 words	3	NO	2/3.3,3/3.3	16	GRID ARRAY, THIN PROFILE	BGA64,8X8,40	8	Flash Memories	1 mm	85 Cel	4MX16	4M	-40 Cel	64	YES	Tin/Silver/Copper (Sn95.5Ag4.0Cu0.5)	YES	BOTTOM	R-PBGA-B64	3.6 V	1.2 mm	10 mm	Not Qualified		67108864 bit	2.7 V		4/8	e1			NOR TYPE	.00004 Amp	13 mm	YES	110 ns	3	NO
M58LW128A150ZA6E	STMicroelectronics	FLASH	INDUSTRIAL	64	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS			8388608 words	3			16	GRID ARRAY, THIN PROFILE				1 mm	85 Cel	8MX16	8M	-40 Cel					BOTTOM	R-PBGA-B64	3.6 V	1.2 mm	10 mm	Not Qualified		134217728 bit	2.7 V	SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE			NOT SPECIFIED	260	NOR TYPE		13 mm		150 ns	3
M58LW064A150ZA6T	STMicroelectronics	FLASH	INDUSTRIAL	64	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	1M	50 mA	4194304 words	3	NO	1.8/3.6,3/3.3	16	GRID ARRAY, THIN PROFILE	BGA64,8X8,40		Flash Memories	1 mm	85 Cel	4MX16	4M	-40 Cel	64	YES	Tin/Silver/Copper (Sn95.5Ag4.0Cu0.5)	YES	BOTTOM	R-PBGA-B64	3.6 V	1.2 mm	10 mm	Not Qualified		67108864 bit	2.7 V	SYNCHRONOUS MODE OF OPERATION ALSO POSSIBLE	4	e1			NOR TYPE	.000001 Amp	13 mm	YES	150 ns	3	NO
M58LW032C90ZA6	STMicroelectronics	FLASH	INDUSTRIAL	64	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	64K	30 mA	2097152 words	3	NO	2/3.3,3/3.3	16	GRID ARRAY, THIN PROFILE	BGA64,8X8,40		Flash Memories	1 mm	85 Cel	2MX16	2M	-40 Cel	32	YES	TIN LEAD	YES	BOTTOM	R-PBGA-B64	3.6 V	1.2 mm	10 mm	Not Qualified		33554432 bit	2.7 V	SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE	4	e0			NOR TYPE	.00004 Amp	13 mm	YES	90 ns	3	NO
M58LW064B120ZA6	STMicroelectronics	FLASH	INDUSTRIAL	80	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS			2097152 words	3			32	GRID ARRAY, THIN PROFILE		16		1 mm	85 Cel	2MX32	2M	-40 Cel					BOTTOM	R-PBGA-B80	3.6 V	1.2 mm	10 mm	Not Qualified		67108864 bit	2.7 V	SYNCHRONOUS MODE OF OPERATION ALSO POSSIBLE					NOR TYPE		13 mm		120 ns	3
M58LW032A110ZA6	STMicroelectronics	FLASH	INDUSTRIAL	64	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	32K	30 mA	2097152 words	3	NO	2/3.3,3/3.3	16	GRID ARRAY, THIN PROFILE	BGA64,8X8,40		Flash Memories	1 mm	85 Cel	2MX16	2M	-40 Cel	64	YES	TIN LEAD	YES	BOTTOM	R-PBGA-B64	3.6 V	1.2 mm	10 mm	Not Qualified		33554432 bit	2.7 V	SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE	4	e0			NOR TYPE	.00004 Amp	13 mm	YES	110 ns	3	NO
M58LW032D90ZA6F	STMicroelectronics	FLASH	INDUSTRIAL	64	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	128K	30 mA	2097152 words	3	NO	3/3.3	16	GRID ARRAY, THIN PROFILE	BGA64,8X8,40	8	Flash Memories	1 mm	85 Cel	2MX16	2M	-40 Cel	32	YES		YES	BOTTOM	R-PBGA-B64	3.6 V	1.2 mm	10 mm	Not Qualified		33554432 bit	2.7 V		4/8		NOT SPECIFIED	260	NOR TYPE	.00004 Amp	13 mm	YES	90 ns	3	NO
M58LW064C110ZA6F	STMicroelectronics	FLASH	INDUSTRIAL	64	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	64K	30 mA	4194304 words	3	NO	2/3.3,3/3.3	16	GRID ARRAY, THIN PROFILE	BGA64,8X8,40		Flash Memories	1 mm	85 Cel	4MX16	4M	-40 Cel	64	YES		YES	BOTTOM	R-PBGA-B64	3.6 V	1.2 mm	10 mm	Not Qualified		67108864 bit	2.7 V	SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE	4		NOT SPECIFIED	260	NOR TYPE	.00004 Amp	13 mm	YES	110 ns	3	NO
M58LW032C90ZA1T	STMicroelectronics	FLASH	COMMERCIAL	64	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	64K	30 mA	2097152 words	3	NO	2/3.3,3/3.3	16	GRID ARRAY, THIN PROFILE	BGA64,8X8,40		Flash Memories	1 mm	70 Cel	2MX16	2M	0 Cel	32	YES	TIN LEAD	YES	BOTTOM	R-PBGA-B64	3.6 V	1.2 mm	10 mm	Not Qualified		33554432 bit	2.7 V	SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE	4	e0			NOR TYPE	.00004 Amp	13 mm	YES	90 ns	3	NO
M58LW032D110ZA1E	STMicroelectronics	FLASH	COMMERCIAL	64	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	128K	30 mA	2097152 words	3	NO	3/3.3	16	GRID ARRAY, THIN PROFILE	BGA64,8X8,40	8	Flash Memories	1 mm	70 Cel	2MX16	2M	0 Cel	32	YES		YES	BOTTOM	R-PBGA-B64	3.6 V	1.2 mm	10 mm	Not Qualified		33554432 bit	2.7 V		4/8		NOT SPECIFIED	260	NOR TYPE	.00004 Amp	13 mm	YES	110 ns	3	NO
M58LW064C110ZA1T	STMicroelectronics	FLASH	COMMERCIAL	64	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	64K	30 mA	4194304 words	3	NO	2/3.3,3/3.3	16	GRID ARRAY, THIN PROFILE	BGA64,8X8,40		Flash Memories	1 mm	70 Cel	4MX16	4M	0 Cel	64	YES	TIN LEAD	YES	BOTTOM	R-PBGA-B64	3.6 V	1.2 mm	10 mm	Not Qualified		67108864 bit	2.7 V	SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE	4	e0			NOR TYPE	.00004 Amp	13 mm	YES	110 ns	3	NO
M58LW128H115ZA1F	STMicroelectronics	FLASH	COMMERCIAL	64	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	64K	30 mA	8388608 words	3	NO	1.8/3.6,3/3.3	16	GRID ARRAY, THIN PROFILE	BGA64,8X8,40		Flash Memories	1 mm	70 Cel	8MX16	8M	0 Cel	128	YES			BOTTOM	R-PBGA-B64	3.6 V	1.2 mm	10 mm	Not Qualified		134217728 bit	2.7 V	SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE	8		NOT SPECIFIED	260	NOR TYPE	.00004 Amp	13 mm	YES	115 ns	3	NO
M58LW064A120ZA1	STMicroelectronics	FLASH	COMMERCIAL	64	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS			4194304 words	3			16	GRID ARRAY, THIN PROFILE				1 mm	70 Cel	4MX16	4M	0 Cel					BOTTOM	R-PBGA-B64	3.6 V	1.2 mm	10 mm	Not Qualified		67108864 bit	2.7 V	SYNCHRONOUS MODE OF OPERATION ALSO POSSIBLE					NOR TYPE		13 mm		120 ns	3
M58LW064D110ZA1F	STMicroelectronics	FLASH	COMMERCIAL	64	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	128K	30 mA	4194304 words	3	NO	3/3.3	16	GRID ARRAY, THIN PROFILE	BGA64,8X8,40	8	Flash Memories	1 mm	70 Cel	4MX16	4M	0 Cel	64	YES		YES	BOTTOM	R-PBGA-B64	3.6 V	1.2 mm	10 mm	Not Qualified		67108864 bit	2.7 V		4/8		NOT SPECIFIED	260	NOR TYPE	.00004 Amp	13 mm	YES	110 ns	3	NO
M58LW032D90ZA1Q	STMicroelectronics	FLASH	COMMERCIAL	64	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS			2097152 words	3			16	GRID ARRAY, THIN PROFILE		8		1 mm	70 Cel	2MX16	2M	0 Cel					BOTTOM	R-PBGA-B64	3.6 V	1.2 mm	10 mm	Not Qualified		33554432 bit	2.7 V						NOR TYPE		13 mm		90 ns	3
M58LW128H115ZA6T	STMicroelectronics	FLASH	INDUSTRIAL	64	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	64K	30 mA	8388608 words	3	NO	1.8/3.6,3/3.3	16	GRID ARRAY, THIN PROFILE	BGA64,8X8,40		Flash Memories	1 mm	85 Cel	8MX16	8M	-40 Cel	128	YES	TIN LEAD		BOTTOM	R-PBGA-B64	3.6 V	1.2 mm	10 mm	Not Qualified		134217728 bit	2.7 V	SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE	8	e0			NOR TYPE	.00004 Amp	13 mm	YES	115 ns	3	NO
M58LW064C110ZA1E	STMicroelectronics	FLASH	COMMERCIAL	64	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	64K	30 mA	4194304 words	3	NO	2/3.3,3/3.3	16	GRID ARRAY, THIN PROFILE	BGA64,8X8,40		Flash Memories	1 mm	70 Cel	4MX16	4M	0 Cel	64	YES		YES	BOTTOM	R-PBGA-B64	3.6 V	1.2 mm	10 mm	Not Qualified		67108864 bit	2.7 V	SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE	4		NOT SPECIFIED	260	NOR TYPE	.00004 Amp	13 mm	YES	110 ns	3	NO
M58LSW32B150ZA6	STMicroelectronics	FLASH	INDUSTRIAL	80	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS			1048576 words	3			32	GRID ARRAY, THIN PROFILE		16		1 mm	85 Cel	1MX32	1M	-40 Cel					BOTTOM	R-PBGA-B80	3.6 V	1.2 mm	10 mm	Not Qualified		33554432 bit	2.7 V	SYNCHRONOUS MODE OF OPERATION ALSO POSSIBLE					NOR TYPE		13 mm		150 ns	3
M58LW032C110ZA1F	STMicroelectronics	FLASH	COMMERCIAL	64	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	64K	30 mA	2097152 words	3	NO	2/3.3,3/3.3	16	GRID ARRAY, THIN PROFILE	BGA64,8X8,40		Flash Memories	1 mm	70 Cel	2MX16	2M	0 Cel	32	YES		YES	BOTTOM	R-PBGA-B64	3.6 V	1.2 mm	10 mm	Not Qualified		33554432 bit	2.7 V	SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE	4		NOT SPECIFIED	260	NOR TYPE	.00004 Amp	13 mm	YES	110 ns	3	NO
M58LSW32A150ZA1T	STMicroelectronics	FLASH	COMMERCIAL	64	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS			2097152 words	3			16	GRID ARRAY, THIN PROFILE				1 mm	70 Cel	2MX16	2M	0 Cel					BOTTOM	R-PBGA-B64	3.6 V	1.2 mm	10 mm	Not Qualified		33554432 bit	2.7 V	SYNCHRONOUS MODE OF OPERATION ALSO POSSIBLE					NOR TYPE		13 mm		150 ns	3
M58LW064D110ZA6F	STMicroelectronics	FLASH	INDUSTRIAL	64	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	128K	30 mA	4194304 words	3	NO	3/3.3	16	GRID ARRAY, THIN PROFILE	BGA64,8X8,40	8	Flash Memories	1 mm	85 Cel	4MX16	4M	-40 Cel	64	YES		YES	BOTTOM	R-PBGA-B64	3.6 V	1.2 mm	10 mm	Not Qualified		67108864 bit	2.7 V		4/8		NOT SPECIFIED	260	NOR TYPE	.00004 Amp	13 mm	YES	110 ns	3	NO
M58LW032C110ZA1T	STMicroelectronics	FLASH	COMMERCIAL	64	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	64K	30 mA	2097152 words	3	NO	2/3.3,3/3.3	16	GRID ARRAY, THIN PROFILE	BGA64,8X8,40		Flash Memories	1 mm	70 Cel	2MX16	2M	0 Cel	32	YES	TIN LEAD	YES	BOTTOM	R-PBGA-B64	3.6 V	1.2 mm	10 mm	Not Qualified		33554432 bit	2.7 V	SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE	4	e0			NOR TYPE	.00004 Amp	13 mm	YES	110 ns	3	NO
M58LT256GB1ZA5E	STMicroelectronics	FLASH	OTHER	64	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	16K,64K	47 mA	16777216 words	1.8	NO	1.8,3/3.3	16	GRID ARRAY, THIN PROFILE	BGA64,8X8,40		Flash Memories	1 mm	85 Cel	16MX16	16M	-25 Cel	4,255	YES			BOTTOM	R-PBGA-B64	2 V	1.2 mm	10 mm	Not Qualified	BOTTOM	268435456 bit	1.7 V		8		40	260	NOR TYPE	.000005 Amp	13 mm	YES	110 ns	1.8	NO
M58LW032A110ZA6T	STMicroelectronics	FLASH	INDUSTRIAL	64	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	32K	30 mA	2097152 words	3	NO	2/3.3,3/3.3	16	GRID ARRAY, THIN PROFILE	BGA64,8X8,40		Flash Memories	1 mm	85 Cel	2MX16	2M	-40 Cel	64	YES	TIN LEAD	YES	BOTTOM	R-PBGA-B64	3.6 V	1.2 mm	10 mm	Not Qualified		33554432 bit	2.7 V	SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE	4	e0			NOR TYPE	.00004 Amp	13 mm	YES	110 ns	3	NO
M58LW032A11ZA6T	STMicroelectronics	FLASH	INDUSTRIAL	64	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS			2097152 words	3			16	GRID ARRAY, THIN PROFILE				1 mm	85 Cel	2MX16	2M	-40 Cel					BOTTOM	R-PBGA-B64	3.6 V	1.2 mm	10 mm	Not Qualified		33554432 bit	2.7 V						NOR TYPE		13 mm		110 ns	3
M58LW064D110ZA1	STMicroelectronics	FLASH	COMMERCIAL	64	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	128K	30 mA	4194304 words	3	NO	3/3.3	16	GRID ARRAY, THIN PROFILE	BGA64,8X8,40	8	Flash Memories	1 mm	70 Cel	4MX16	4M	0 Cel	64	YES	TIN LEAD	YES	BOTTOM	R-PBGA-B64	3.6 V	1.2 mm	10 mm	Not Qualified		67108864 bit	2.7 V		4/8	e0			NOR TYPE	.00004 Amp	13 mm	YES	110 ns	3	NO
M58LV064A150ZA6T	STMicroelectronics	FLASH	INDUSTRIAL	64	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	1M	50 mA	4194304 words	3.3	NO	2/3.3,3.3	16	GRID ARRAY, THIN PROFILE	BGA64,8X8,40		Flash Memories	1 mm	85 Cel	4MX16	4M	-40 Cel	64	YES	Tin/Silver/Copper (Sn95.5Ag4.0Cu0.5)	YES	BOTTOM	R-PBGA-B64	3.6 V	1.2 mm	10 mm	Not Qualified		67108864 bit	3 V	SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE	4	e1			NOR TYPE	.000001 Amp	13 mm	YES	150 ns	3	NO
M58LW064D110ZA6E	STMicroelectronics	FLASH	INDUSTRIAL	64	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	128K	30 mA	4194304 words	3	NO	3/3.3	16	GRID ARRAY, THIN PROFILE	BGA64,8X8,40	8	Flash Memories	1 mm	85 Cel	4MX16	4M	-40 Cel	64	YES		YES	BOTTOM	R-PBGA-B64	3.6 V	1.2 mm	10 mm	Not Qualified		67108864 bit	2.7 V		4/8		NOT SPECIFIED	260	NOR TYPE	.00004 Amp	13 mm	YES	110 ns	3	NO
M58LW064D11ZA6SE	STMicroelectronics	FLASH	INDUSTRIAL	64	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS			4194304 words	3			16	GRID ARRAY, THIN PROFILE		8		1 mm	85 Cel	4MX16	4M	-40 Cel					BOTTOM	R-PBGA-B64	3.6 V	1.2 mm	10 mm	Not Qualified		67108864 bit	2.7 V						NOR TYPE		13 mm		110 ns	3
M58LW032D90ZA1S	STMicroelectronics	FLASH	COMMERCIAL	64	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS			2097152 words	3			16	GRID ARRAY, THIN PROFILE		8		1 mm	70 Cel	2MX16	2M	0 Cel					BOTTOM	R-PBGA-B64	3.6 V	1.2 mm	10 mm	Not Qualified		33554432 bit	2.7 V						NOR TYPE		13 mm		90 ns	3
M58LW128B150ZA1	STMicroelectronics	FLASH	COMMERCIAL	80	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	64K	50 mA	4194304 words	3	NO	2/3.3,3/3.3	32	GRID ARRAY, THIN PROFILE	BGA80,8X10,40	16	Flash Memories	1 mm	70 Cel	4MX32	4M	0 Cel	128	YES	TIN LEAD	YES	BOTTOM	R-PBGA-B80	3.6 V	1.2 mm	10 mm	Not Qualified		134217728 bit	2.7 V	SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE	4/8	e0			NOR TYPE	.00012 Amp	13 mm	YES	150 ns	3	NO
M58LW032C90ZA1E	STMicroelectronics	FLASH	COMMERCIAL	64	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	64K	30 mA	2097152 words	3	NO	2/3.3,3/3.3	16	GRID ARRAY, THIN PROFILE	BGA64,8X8,40		Flash Memories	1 mm	70 Cel	2MX16	2M	0 Cel	32	YES		YES	BOTTOM	R-PBGA-B64	3.6 V	1.2 mm	10 mm	Not Qualified		33554432 bit	2.7 V	SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE	4		NOT SPECIFIED	260	NOR TYPE	.00004 Amp	13 mm	YES	90 ns	3	NO
M58LW128A150ZA6T	STMicroelectronics	FLASH	INDUSTRIAL	64	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	64K	50 mA	8388608 words	3	NO	2/3.3,3/3.3	16	GRID ARRAY, THIN PROFILE	BGA64,8X8,40		Flash Memories	1 mm	85 Cel	8MX16	8M	-40 Cel	128	YES	TIN LEAD	YES	BOTTOM	R-PBGA-B64	3.6 V	1.2 mm	10 mm	Not Qualified		134217728 bit	2.7 V	SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE	8	e0			NOR TYPE	.00012 Amp	13 mm	YES	150 ns	3	NO
M58LT128HST8ZA6T	STMicroelectronics	FLASH	INDUSTRIAL	64	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	16K,64K	53 mA	8388608 words	1.8	NO	1.8,3/3.3	16	GRID ARRAY, THIN PROFILE	BGA64,8X8,40		Flash Memories	1 mm	85 Cel	8MX16	8M	-40 Cel	4,127	YES	TIN LEAD		BOTTOM	R-PBGA-B64	2 V	1.2 mm	10 mm	Not Qualified	TOP	134217728 bit	1.7 V	SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE	4	e0			NOR TYPE	.000075 Amp	13 mm	YES	85 ns	1.8	NO
M58LW064B150ZA1	STMicroelectronics	FLASH	COMMERCIAL	80	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	1M	50 mA	2097152 words	3	NO	2/3.3,3/3.3	32	GRID ARRAY, THIN PROFILE	BGA80,8X10,40	16	Flash Memories	1 mm	70 Cel	2MX32	2M	0 Cel	64	YES	Tin/Silver/Copper (Sn95.5Ag4.0Cu0.5)	YES	BOTTOM	R-PBGA-B80	3.6 V	1.2 mm	10 mm	Not Qualified		67108864 bit	2.7 V	SYNCHRONOUS MODE OF OPERATION ALSO POSSIBLE	2/4	e1			NOR TYPE	.000001 Amp	13 mm	YES	150 ns	3	NO
M58LW128A150ZA6F	STMicroelectronics	FLASH	INDUSTRIAL	64	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS			8388608 words	3			16	GRID ARRAY, THIN PROFILE				1 mm	85 Cel	8MX16	8M	-40 Cel					BOTTOM	R-PBGA-B64	3.6 V	1.2 mm	10 mm	Not Qualified		134217728 bit	2.7 V	SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE			NOT SPECIFIED	260	NOR TYPE		13 mm		150 ns	3
M58LW064A150ZA1	STMicroelectronics	FLASH	COMMERCIAL	64	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	1M	50 mA	4194304 words	3	NO	1.8/3.6,3/3.3	16	GRID ARRAY, THIN PROFILE	BGA64,8X8,40		Flash Memories	1 mm	70 Cel	4MX16	4M	0 Cel	64	YES	Tin/Silver/Copper (Sn95.5Ag4.0Cu0.5)	YES	BOTTOM	R-PBGA-B64	3.6 V	1.2 mm	10 mm	Not Qualified		67108864 bit	2.7 V	SYNCHRONOUS MODE OF OPERATION ALSO POSSIBLE	4	e1			NOR TYPE	.000001 Amp	13 mm	YES	150 ns	3	NO
M58LW128H115ZA1T	STMicroelectronics	FLASH	COMMERCIAL	64	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	64K	30 mA	8388608 words	3	NO	1.8/3.6,3/3.3	16	GRID ARRAY, THIN PROFILE	BGA64,8X8,40		Flash Memories	1 mm	70 Cel	8MX16	8M	0 Cel	128	YES	TIN LEAD		BOTTOM	R-PBGA-B64	3.6 V	1.2 mm	10 mm	Not Qualified		134217728 bit	2.7 V	SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE	8	e0			NOR TYPE	.00004 Amp	13 mm	YES	115 ns	3	NO

Flash Memory

Flash memory is a type of non-volatile computer memory that is commonly used in digital devices such as USB drives, solid-state drives, and digital cameras. It is a type of EEPROM (Electrically Erasable Programmable Read-Only Memory) that allows data to be erased and reprogrammed in blocks instead of one byte at a time. Flash memory uses a floating gate transistor to store data, which allows it to retain information even when the power is turned off.

Flash memory is widely used in digital devices because of its high capacity, small size, and fast access times. It is also more durable than other types of memory, such as hard disk drives, because it has no moving parts. This makes it ideal for use in portable devices that may be subject to physical shock or vibration.

There are two types of flash memory: NOR flash and NAND flash. NOR flash is faster than NAND flash, but it has lower density and higher cost per bit. NOR flash is typically used for code storage, such as firmware or boot code, because it provides faster access times. NAND flash has higher density and lower cost per bit, which makes it ideal for data storage applications.

Flash memory has a limited lifespan, as it can only be erased and reprogrammed a limited number of times. This is because the process of erasing and reprogramming the memory causes wear and tear on the floating gate transistor. However, modern flash memory devices have a sophisticated wear-leveling algorithm that distributes writes evenly across the memory, which extends the lifespan of the device.