TBGA Flash Memory 2,400+

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Terminal Form	Parallel or Serial	Operating Mode	Sector Size (Words)	Maximum Supply Current	No. of Words	Nominal Supply Voltage / Vsup (V)	Toggle Bit	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Alternate Memory Width	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Organization	No. of Words Code	Minimum Operating Temperature	No. of Sectors/Size	Command User Interface	Terminal Finish	Ready or Busy	Terminal Position	JESD-30 Code	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Width	Qualification	Boot Block	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	Page Size (words)	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Type	Maximum Standby Current	Length	Common Flash Interface	Maximum Access Time	Programming Voltage (V)	Data Polling
M29W640GB90ZF6E	STMicroelectronics	FLASH	INDUSTRIAL	64	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	8K,64K	10 mA	4194304 words	3	YES	3/3.3	16	GRID ARRAY, THIN PROFILE	BGA64,8X8,40	8	Flash Memories	1 mm	85 Cel	4MX16	4M	-40 Cel	8,127	YES		YES	BOTTOM	R-PBGA-B64	3.6 V	1.2 mm	10 mm	Not Qualified	BOTTOM	67108864 bit	2.7 V		4/8		40	260	NOR TYPE	.0001 Amp	13 mm	YES	90 ns	3	YES
M28W320FSU70ZA1F	STMicroelectronics	FLASH	COMMERCIAL	64	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	64K	20 mA	2097152 words	3	NO	3/3.3	16	GRID ARRAY, THIN PROFILE	BGA64,8X8,40		Flash Memories	1 mm	70 Cel	2MX16	2M	0 Cel	32	YES	TIN SILVER COPPER		BOTTOM	R-PBGA-B64	3.6 V	1.2 mm	10 mm	Not Qualified		33554432 bit	2.7 V	100,000 PROGRAM/ERASE CYCLES		e1			NOR TYPE	.00005 Amp	13 mm	YES	70 ns	3	NO
M29DW128F70ZA1T	STMicroelectronics	FLASH	COMMERCIAL	64	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	8K,64K	20 mA	8388608 words	3	YES	3/3.3	16	GRID ARRAY, THIN PROFILE	BGA64,8X8,32	8	Flash Memories	1 mm	70 Cel	8MX16	8M	0 Cel	16,254	YES		YES	BOTTOM	R-PBGA-B64	3.6 V	1.2 mm	10 mm	Not Qualified	BOTTOM/TOP	134217728 bit	2.7 V	100,000 PROGRAM/ERASE CYCLES	8/16		30	240	NOR TYPE	.0001 Amp	13 mm	YES	70 ns	3	YES
M29W640GH60ZF6E	STMicroelectronics	FLASH	INDUSTRIAL	64	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	64K	10 mA	4194304 words	3	YES	3/3.3	16	GRID ARRAY, THIN PROFILE	BGA64,8X8,40	8	Flash Memories	1 mm	85 Cel	4MX16	4M	-40 Cel	128	YES		YES	BOTTOM	R-PBGA-B64	3.6 V	1.2 mm	10 mm	Not Qualified		67108864 bit	2.7 V		4/8		40	260	NOR TYPE	.0001 Amp	13 mm	YES	60 ns	3	YES
M29DW128F60ZA1T	STMicroelectronics	FLASH	COMMERCIAL	64	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	8K,64K	20 mA	8388608 words	3	YES	3/3.3	16	GRID ARRAY, THIN PROFILE	BGA64,8X8,32	8	Flash Memories	1 mm	70 Cel	8MX16	8M	0 Cel	16,254	YES		YES	BOTTOM	R-PBGA-B64	3.6 V	1.2 mm	10 mm	Not Qualified	BOTTOM/TOP	134217728 bit	2.7 V	100,000 PROGRAM/ERASE CYCLES	8/16		30	240	NOR TYPE	.0001 Amp	13 mm	YES	60 ns	3	YES
M28W320FSB70ZA6	STMicroelectronics	FLASH	INDUSTRIAL	64	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	4K,32K	20 mA	2097152 words	3	NO	3/3.3	16	GRID ARRAY, THIN PROFILE	BGA64,8X8,40		Flash Memories	1 mm	85 Cel	2MX16	2M	-40 Cel	8,63	YES	TIN LEAD		BOTTOM	R-PBGA-B64	3.6 V	1.2 mm	10 mm	Not Qualified	BOTTOM	33554432 bit	2.7 V	100,000 PROGRAM/ERASE CYCLES; BOTTOM BOOT BLOCK		e0			NOR TYPE	.00005 Amp	13 mm	YES	70 ns	3	NO
M29W640GB60ZF6E	STMicroelectronics	FLASH	INDUSTRIAL	64	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	8K,64K	10 mA	4194304 words	3	YES	3/3.3	16	GRID ARRAY, THIN PROFILE	BGA64,8X8,40	8	Flash Memories	1 mm	85 Cel	4MX16	4M	-40 Cel	8,127	YES		YES	BOTTOM	R-PBGA-B64	3.6 V	1.2 mm	10 mm	Not Qualified	BOTTOM	67108864 bit	2.7 V		4/8		40	260	NOR TYPE	.0001 Amp	13 mm	YES	60 ns	3	YES
M28W640FST70ZA6	STMicroelectronics	FLASH	INDUSTRIAL	64	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	4K,32K	20 mA	4194304 words	3	NO	3/3.3	16	GRID ARRAY, THIN PROFILE	BGA64,8X8,40		Flash Memories	1 mm	85 Cel	4MX16	4M	-40 Cel	8,127	YES	TIN LEAD		BOTTOM	R-PBGA-B64	3.6 V	1.2 mm	10 mm	Not Qualified	TOP	67108864 bit	2.7 V	100,000 PROGRAM/ERASE CYCLES; TOP BOOT BLOCK		e0			NOR TYPE	.00005 Amp	13 mm	YES	70 ns	3	NO
M29W128GL90ZA6F	STMicroelectronics	FLASH	INDUSTRIAL	64	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	128K	20 mA	8388608 words	3	YES	3/3.3	16	GRID ARRAY, THIN PROFILE	BGA64,8X8,40	8	Flash Memories	1 mm	85 Cel	8MX16	8M	-40 Cel	128	YES		YES	BOTTOM	R-PBGA-B64	3.6 V	1.2 mm	10 mm	Not Qualified	BOTTOM/TOP	134217728 bit	2.7 V		8/16		40	260	NOR TYPE	.0001 Amp	13 mm	YES	90 ns	3	YES
M29W640GT60ZF6F	STMicroelectronics	FLASH	INDUSTRIAL	64	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	8K,64K	10 mA	4194304 words	3	YES	3/3.3	16	GRID ARRAY, THIN PROFILE	BGA64,8X8,40	8	Flash Memories	1 mm	85 Cel	4MX16	4M	-40 Cel	8,127	YES		YES	BOTTOM	R-PBGA-B64	3.6 V	1.2 mm	10 mm	Not Qualified	TOP	67108864 bit	2.7 V		4/8		40	260	NOR TYPE	.0001 Amp	13 mm	YES	60 ns	3	YES
M28W640FSB70ZA6	STMicroelectronics	FLASH	INDUSTRIAL	64	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	4K,32K	20 mA	4194304 words	3	NO	3/3.3	16	GRID ARRAY, THIN PROFILE	BGA64,8X8,40		Flash Memories	1 mm	85 Cel	4MX16	4M	-40 Cel	8,127	YES	TIN LEAD		BOTTOM	R-PBGA-B64	3.6 V	1.2 mm	10 mm	Not Qualified	BOTTOM	67108864 bit	2.7 V	100,000 PROGRAM/ERASE CYCLES; BOTTOM BOOT BLOCK		e0			NOR TYPE	.00005 Amp	13 mm	YES	70 ns	3	NO
M28W640FSU70ZA1E	STMicroelectronics	FLASH	COMMERCIAL	64	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	64K	20 mA	4194304 words	3	NO	3/3.3	16	GRID ARRAY, THIN PROFILE	BGA64,8X8,40		Flash Memories	1 mm	70 Cel	4MX16	4M	0 Cel	64	YES	TIN SILVER COPPER		BOTTOM	R-PBGA-B64	3.6 V	1.2 mm	10 mm	Not Qualified		67108864 bit	2.7 V	100,000 PROGRAM/ERASE CYCLES		e1			NOR TYPE	.00005 Amp	13 mm	YES	70 ns	3	NO
M30LW128D110ZA1T	STMicroelectronics	FLASH MODULE	COMMERCIAL	64	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	128K	30 mA	8388608 words	3	NO	3/3.3	16	GRID ARRAY, THIN PROFILE	BGA64,8X8,40	8	Flash Memories	1 mm	70 Cel	8MX16	8M	0 Cel	128	YES	TIN LEAD	YES	BOTTOM	R-PBGA-B64	3.6 V	1.2 mm	10 mm	Not Qualified		134217728 bit	2.7 V		4/8	e0			NOR TYPE	.00008 Amp	13 mm	YES	110 ns	3.3	NO
M28W320FSB70ZA6E	STMicroelectronics	FLASH	INDUSTRIAL	64	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	4K,32K	20 mA	2097152 words	3	NO	3/3.3	16	GRID ARRAY, THIN PROFILE	BGA64,8X8,40		Flash Memories	1 mm	85 Cel	2MX16	2M	-40 Cel	8,63	YES	TIN SILVER COPPER		BOTTOM	R-PBGA-B64	3.6 V	1.2 mm	10 mm	Not Qualified	BOTTOM	33554432 bit	2.7 V	100,000 PROGRAM/ERASE CYCLES; BOTTOM BOOT BLOCK		e1			NOR TYPE	.00005 Amp	13 mm	YES	70 ns	3	NO
M28W320FSU70ZA1E	STMicroelectronics	FLASH	COMMERCIAL	64	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	64K	20 mA	2097152 words	3	NO	3/3.3	16	GRID ARRAY, THIN PROFILE	BGA64,8X8,40		Flash Memories	1 mm	70 Cel	2MX16	2M	0 Cel	32	YES	TIN SILVER COPPER		BOTTOM	R-PBGA-B64	3.6 V	1.2 mm	10 mm	Not Qualified		33554432 bit	2.7 V	100,000 PROGRAM/ERASE CYCLES		e1			NOR TYPE	.00005 Amp	13 mm	YES	70 ns	3	NO
M29W128GH90ZA6F	STMicroelectronics	FLASH	INDUSTRIAL	64	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	128K	20 mA	8388608 words	3	YES	3/3.3	16	GRID ARRAY, THIN PROFILE	BGA64,8X8,40	8	Flash Memories	1 mm	85 Cel	8MX16	8M	-40 Cel	128	YES		YES	BOTTOM	R-PBGA-B64	3.6 V	1.2 mm	10 mm	Not Qualified	BOTTOM/TOP	134217728 bit	2.7 V		8/16		40	260	NOR TYPE	.0001 Amp	13 mm	YES	90 ns	3	YES
M28W320FST70ZA6	STMicroelectronics	FLASH	INDUSTRIAL	64	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	4K,32K	20 mA	2097152 words	3	NO	3/3.3	16	GRID ARRAY, THIN PROFILE	BGA64,8X8,40		Flash Memories	1 mm	85 Cel	2MX16	2M	-40 Cel	8,63	YES	TIN LEAD		BOTTOM	R-PBGA-B64	3.6 V	1.2 mm	10 mm	Not Qualified	TOP	33554432 bit	2.7 V	100,000 PROGRAM/ERASE CYCLES; TOP BOOT BLOCK		e0			NOR TYPE	.00005 Amp	13 mm	YES	70 ns	3	NO
M29W640GL60ZF6F	STMicroelectronics	FLASH	INDUSTRIAL	64	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	64K	10 mA	4194304 words	3	YES	3/3.3	16	GRID ARRAY, THIN PROFILE	BGA64,8X8,40	8	Flash Memories	1 mm	85 Cel	4MX16	4M	-40 Cel	128	YES		YES	BOTTOM	R-PBGA-B64	3.6 V	1.2 mm	10 mm	Not Qualified		67108864 bit	2.7 V		4/8		40	260	NOR TYPE	.0001 Amp	13 mm	YES	60 ns	3	YES
M29W640GH90ZF6E	STMicroelectronics	FLASH	INDUSTRIAL	64	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	64K	10 mA	4194304 words	3	YES	3/3.3	16	GRID ARRAY, THIN PROFILE	BGA64,8X8,40	8	Flash Memories	1 mm	85 Cel	4MX16	4M	-40 Cel	128	YES		YES	BOTTOM	R-PBGA-B64	3.6 V	1.2 mm	10 mm	Not Qualified		67108864 bit	2.7 V		4/8		40	260	NOR TYPE	.0001 Amp	13 mm	YES	90 ns	3	YES
M29DW128F60ZA6F	STMicroelectronics	FLASH	INDUSTRIAL	64	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	8K,64K	20 mA	8388608 words	3	YES	3/3.3	16	GRID ARRAY, THIN PROFILE	BGA64,8X8,40	8	Flash Memories	1 mm	85 Cel	8MX16	8M	-40 Cel	16,254	YES		YES	BOTTOM	R-PBGA-B64	3.6 V	1.2 mm	10 mm	Not Qualified	BOTTOM/TOP	134217728 bit	2.7 V	100,000 PROGRAM/ERASE CYCLES	8/16		40	260	NOR TYPE	.0001 Amp	13 mm	YES	60 ns	3	YES
M29W128FH70ZA6F	STMicroelectronics	FLASH	INDUSTRIAL	64	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	64K	20 mA	8388608 words	3	YES	3/3.3	16	GRID ARRAY, THIN PROFILE	BGA64,8X8,40	8	Flash Memories	1 mm	85 Cel	8MX16	8M	-40 Cel	256	YES	TIN SILVER COPPER	YES	BOTTOM	R-PBGA-B64	3.6 V	1.2 mm	10 mm	Not Qualified		134217728 bit	2.7 V	100,000 PROGRAM/ERASE CYCLES	8/16	e1			NOR TYPE	.0001 Amp	13 mm	YES	70 ns	3	YES
M28W640FSB70ZA6F	STMicroelectronics	FLASH	INDUSTRIAL	64	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	4K,32K	20 mA	4194304 words	3	NO	3/3.3	16	GRID ARRAY, THIN PROFILE	BGA64,8X8,40		Flash Memories	1 mm	85 Cel	4MX16	4M	-40 Cel	8,127	YES	TIN SILVER COPPER		BOTTOM	R-PBGA-B64	3.6 V	1.2 mm	10 mm	Not Qualified	BOTTOM	67108864 bit	2.7 V	100,000 PROGRAM/ERASE CYCLES; BOTTOM BOOT BLOCK		e1			NOR TYPE	.00005 Amp	13 mm	YES	70 ns	3	NO
M29W128GL90ZA6E	STMicroelectronics	FLASH	INDUSTRIAL	64	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	128K	20 mA	8388608 words	3	YES	3/3.3	16	GRID ARRAY, THIN PROFILE	BGA64,8X8,40	8	Flash Memories	1 mm	85 Cel	8MX16	8M	-40 Cel	128	YES		YES	BOTTOM	R-PBGA-B64	3.6 V	1.2 mm	10 mm	Not Qualified	BOTTOM/TOP	134217728 bit	2.7 V		8/16		40	260	NOR TYPE	.0001 Amp	13 mm	YES	90 ns	3	YES
M29W640GH60ZF6F	STMicroelectronics	FLASH	INDUSTRIAL	64	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	64K	10 mA	4194304 words	3	YES	3/3.3	16	GRID ARRAY, THIN PROFILE	BGA64,8X8,40	8	Flash Memories	1 mm	85 Cel	4MX16	4M	-40 Cel	128	YES		YES	BOTTOM	R-PBGA-B64	3.6 V	1.2 mm	10 mm	Not Qualified		67108864 bit	2.7 V		4/8		40	260	NOR TYPE	.0001 Amp	13 mm	YES	60 ns	3	YES
M28W640FST70ZA6F	STMicroelectronics	FLASH	INDUSTRIAL	64	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	4K,32K	20 mA	4194304 words	3	NO	3/3.3	16	GRID ARRAY, THIN PROFILE	BGA64,8X8,40		Flash Memories	1 mm	85 Cel	4MX16	4M	-40 Cel	8,127	YES	TIN SILVER COPPER		BOTTOM	R-PBGA-B64	3.6 V	1.2 mm	10 mm	Not Qualified	TOP	67108864 bit	2.7 V	100,000 PROGRAM/ERASE CYCLES; TOP BOOT BLOCK		e1			NOR TYPE	.00005 Amp	13 mm	YES	70 ns	3	NO
M28W640FST70ZA6E	STMicroelectronics	FLASH	INDUSTRIAL	64	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	4K,32K	20 mA	4194304 words	3	NO	3/3.3	16	GRID ARRAY, THIN PROFILE	BGA64,8X8,40		Flash Memories	1 mm	85 Cel	4MX16	4M	-40 Cel	8,127	YES	TIN SILVER COPPER		BOTTOM	R-PBGA-B64	3.6 V	1.2 mm	10 mm	Not Qualified	TOP	67108864 bit	2.7 V	100,000 PROGRAM/ERASE CYCLES; TOP BOOT BLOCK		e1			NOR TYPE	.00005 Amp	13 mm	YES	70 ns	3	NO
M29W640GT90ZF6E	STMicroelectronics	FLASH	INDUSTRIAL	64	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	8K,64K	10 mA	4194304 words	3	YES	3/3.3	16	GRID ARRAY, THIN PROFILE	BGA64,8X8,40	8	Flash Memories	1 mm	85 Cel	4MX16	4M	-40 Cel	8,127	YES		YES	BOTTOM	R-PBGA-B64	3.6 V	1.2 mm	10 mm	Not Qualified	TOP	67108864 bit	2.7 V		4/8		40	260	NOR TYPE	.0001 Amp	13 mm	YES	90 ns	3	YES
M28W640FSU70ZA6	STMicroelectronics	FLASH	INDUSTRIAL	64	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	64K	20 mA	4194304 words	3	NO	3/3.3	16	GRID ARRAY, THIN PROFILE	BGA64,8X8,40		Flash Memories	1 mm	85 Cel	4MX16	4M	-40 Cel	64	YES	TIN LEAD		BOTTOM	R-PBGA-B64	3.6 V	1.2 mm	10 mm	Not Qualified		67108864 bit	2.7 V	100,000 PROGRAM/ERASE CYCLES	4	e0			NOR TYPE	.000005 Amp	13 mm	YES	70 ns	3	NO
M28W320FSU70ZA6	STMicroelectronics	FLASH	INDUSTRIAL	64	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	64K	20 mA	2097152 words	3	NO	3/3.3	16	GRID ARRAY, THIN PROFILE	BGA64,8X8,40		Flash Memories	1 mm	85 Cel	2MX16	2M	-40 Cel	32	YES	TIN LEAD		BOTTOM	R-PBGA-B64	3.6 V	1.2 mm	10 mm	Not Qualified		33554432 bit	2.7 V	100,000 PROGRAM/ERASE CYCLES		e0			NOR TYPE	.00005 Amp	13 mm	YES	70 ns	3	NO
M28W640FSB70ZA6T	STMicroelectronics	FLASH	INDUSTRIAL	64	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	4K,32K	20 mA	4194304 words	3	NO	3/3.3	16	GRID ARRAY, THIN PROFILE	BGA64,8X8,40		Flash Memories	1 mm	85 Cel	4MX16	4M	-40 Cel	8,127	YES	TIN LEAD		BOTTOM	R-PBGA-B64	3.6 V	1.2 mm	10 mm	Not Qualified	BOTTOM	67108864 bit	2.7 V	100,000 PROGRAM/ERASE CYCLES; BOTTOM BOOT BLOCK		e0			NOR TYPE	.00005 Amp	13 mm	YES	70 ns	3	NO
M28W640FSU70ZA6F	STMicroelectronics	FLASH	INDUSTRIAL	64	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	64K	20 mA	4194304 words	3	NO	3/3.3	16	GRID ARRAY, THIN PROFILE	BGA64,8X8,40		Flash Memories	1 mm	85 Cel	4MX16	4M	-40 Cel	64	YES	TIN SILVER COPPER		BOTTOM	R-PBGA-B64	3.6 V	1.2 mm	10 mm	Not Qualified		67108864 bit	2.7 V	100,000 PROGRAM/ERASE CYCLES	4	e1			NOR TYPE	.000005 Amp	13 mm	YES	70 ns	3	NO
M28W640FSB70ZA1E	STMicroelectronics	FLASH	COMMERCIAL	64	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	4K,32K	20 mA	4194304 words	3	NO	3/3.3	16	GRID ARRAY, THIN PROFILE	BGA64,8X8,40		Flash Memories	1 mm	70 Cel	4MX16	4M	0 Cel	8,127	YES	TIN SILVER COPPER		BOTTOM	R-PBGA-B64	3.6 V	1.2 mm	10 mm	Not Qualified	BOTTOM	67108864 bit	2.7 V	100,000 PROGRAM/ERASE CYCLES; BOTTOM BOOT BLOCK		e1			NOR TYPE	.00005 Amp	13 mm	YES	70 ns	3	NO
M28W640FSU70ZA6E	STMicroelectronics	FLASH	INDUSTRIAL	64	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	64K	20 mA	4194304 words	3	NO	3/3.3	16	GRID ARRAY, THIN PROFILE	BGA64,8X8,40		Flash Memories	1 mm	85 Cel	4MX16	4M	-40 Cel	64	YES	TIN SILVER COPPER		BOTTOM	R-PBGA-B64	3.6 V	1.2 mm	10 mm	Not Qualified		67108864 bit	2.7 V	100,000 PROGRAM/ERASE CYCLES	4	e1			NOR TYPE	.000005 Amp	13 mm	YES	70 ns	3	NO
M30LW128D110ZA6T	STMicroelectronics	FLASH MODULE	INDUSTRIAL	64	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	128K	30 mA	8388608 words	3	NO	3/3.3	16	GRID ARRAY, THIN PROFILE	BGA64,8X8,40	8	Flash Memories	1 mm	85 Cel	8MX16	8M	-40 Cel	128	YES	TIN LEAD	YES	BOTTOM	R-PBGA-B64	3.6 V	1.2 mm	10 mm	Not Qualified		134217728 bit	2.7 V		4/8	e0			NOR TYPE	.00008 Amp	13 mm	YES	110 ns	3.3	NO
M29W640GL70ZF6F	STMicroelectronics	FLASH	INDUSTRIAL	64	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	64K	10 mA	4194304 words	3	YES	3/3.3	16	GRID ARRAY, THIN PROFILE	BGA64,8X8,40	8	Flash Memories	1 mm	85 Cel	4MX16	4M	-40 Cel	128	YES		YES	BOTTOM	R-PBGA-B64	3.6 V	1.2 mm	10 mm	Not Qualified		67108864 bit	2.7 V		4/8		40	260	NOR TYPE	.0001 Amp	13 mm	YES	70 ns	3	YES
M28W320FSU70ZA6T	STMicroelectronics	FLASH	INDUSTRIAL	64	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	64K	20 mA	2097152 words	3	NO	3/3.3	16	GRID ARRAY, THIN PROFILE	BGA64,8X8,40		Flash Memories	1 mm	85 Cel	2MX16	2M	-40 Cel	32	YES	TIN LEAD		BOTTOM	R-PBGA-B64	3.6 V	1.2 mm	10 mm	Not Qualified		33554432 bit	2.7 V	100,000 PROGRAM/ERASE CYCLES		e0			NOR TYPE	.00005 Amp	13 mm	YES	70 ns	3	NO
M29W640GB70ZF6E	STMicroelectronics	FLASH	INDUSTRIAL	64	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	8K,64K	10 mA	4194304 words	3	YES	3/3.3	16	GRID ARRAY, THIN PROFILE	BGA64,8X8,40	8	Flash Memories	1 mm	85 Cel	4MX16	4M	-40 Cel	8,127	YES		YES	BOTTOM	R-PBGA-B64	3.6 V	1.2 mm	10 mm	Not Qualified	BOTTOM	67108864 bit	2.7 V		4/8		40	260	NOR TYPE	.0001 Amp	13 mm	YES	70 ns	3	YES
M29DW128F60ZA1	STMicroelectronics	FLASH	COMMERCIAL	64	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	8K,64K	20 mA	8388608 words	3	YES	3/3.3	16	GRID ARRAY, THIN PROFILE	BGA64,8X8,32	8	Flash Memories	1 mm	70 Cel	8MX16	8M	0 Cel	16,254	YES		YES	BOTTOM	R-PBGA-B64	3.6 V	1.2 mm	10 mm	Not Qualified	BOTTOM/TOP	134217728 bit	2.7 V	100,000 PROGRAM/ERASE CYCLES	8/16		30	240	NOR TYPE	.0001 Amp	13 mm	YES	60 ns	3	YES
M29DW128F70ZA1F	STMicroelectronics	FLASH	COMMERCIAL	64	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	8K,64K	20 mA	8388608 words	3	YES	3/3.3	16	GRID ARRAY, THIN PROFILE	BGA64,8X8,32	8	Flash Memories	1 mm	70 Cel	8MX16	8M	0 Cel	16,254	YES		YES	BOTTOM	R-PBGA-B64	3.6 V	1.2 mm	10 mm	Not Qualified	BOTTOM/TOP	134217728 bit	2.7 V	100,000 PROGRAM/ERASE CYCLES	8/16		40	260	NOR TYPE	.0001 Amp	13 mm	YES	70 ns	3	YES
M28W640FSB70ZA1	STMicroelectronics	FLASH	COMMERCIAL	64	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	4K,32K	20 mA	4194304 words	3	NO	3/3.3	16	GRID ARRAY, THIN PROFILE	BGA64,8X8,40		Flash Memories	1 mm	70 Cel	4MX16	4M	0 Cel	8,127	YES	TIN LEAD		BOTTOM	R-PBGA-B64	3.6 V	1.2 mm	10 mm	Not Qualified	BOTTOM	67108864 bit	2.7 V	100,000 PROGRAM/ERASE CYCLES; BOTTOM BOOT BLOCK		e0			NOR TYPE	.00005 Amp	13 mm	YES	70 ns	3	NO
M29W640GL60ZF6E	STMicroelectronics	FLASH	INDUSTRIAL	64	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	64K	10 mA	4194304 words	3	YES	3/3.3	16	GRID ARRAY, THIN PROFILE	BGA64,8X8,40	8	Flash Memories	1 mm	85 Cel	4MX16	4M	-40 Cel	128	YES		YES	BOTTOM	R-PBGA-B64	3.6 V	1.2 mm	10 mm	Not Qualified		67108864 bit	2.7 V		4/8		40	260	NOR TYPE	.0001 Amp	13 mm	YES	60 ns	3	YES
M30LW128D110ZA1F	STMicroelectronics	FLASH MODULE	COMMERCIAL	64	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	128K	30 mA	8388608 words	3	NO	3/3.3	16	GRID ARRAY, THIN PROFILE	BGA64,8X8,40	8	Flash Memories	1 mm	70 Cel	8MX16	8M	0 Cel	128	YES		YES	BOTTOM	R-PBGA-B64	3.6 V	1.2 mm	10 mm	Not Qualified		134217728 bit	2.7 V		4/8		NOT SPECIFIED	260	NOR TYPE	.00008 Amp	13 mm	YES	110 ns	3.3	NO
M28W640FSU70ZA1F	STMicroelectronics	FLASH	COMMERCIAL	64	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	64K	20 mA	4194304 words	3	NO	3/3.3	16	GRID ARRAY, THIN PROFILE	BGA64,8X8,40		Flash Memories	1 mm	70 Cel	4MX16	4M	0 Cel	64	YES	TIN SILVER COPPER		BOTTOM	R-PBGA-B64	3.6 V	1.2 mm	10 mm	Not Qualified		67108864 bit	2.7 V	100,000 PROGRAM/ERASE CYCLES		e1			NOR TYPE	.00005 Amp	13 mm	YES	70 ns	3	NO
M28W320FSB70ZA1T	STMicroelectronics	FLASH	COMMERCIAL	64	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	4K,32K	20 mA	2097152 words	3	NO	3/3.3	16	GRID ARRAY, THIN PROFILE	BGA64,8X8,40		Flash Memories	1 mm	70 Cel	2MX16	2M	0 Cel	8,63	YES	TIN LEAD		BOTTOM	R-PBGA-B64	3.6 V	1.2 mm	10 mm	Not Qualified	BOTTOM	33554432 bit	2.7 V	100,000 PROGRAM/ERASE CYCLES; BOTTOM BOOT BLOCK		e0			NOR TYPE	.00005 Amp	13 mm	YES	70 ns	3	NO
M29W128FL60ZA6E	STMicroelectronics	FLASH	INDUSTRIAL	64	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	64K	20 mA	8388608 words	3	YES	3/3.3	16	GRID ARRAY, THIN PROFILE	BGA64,8X8,40	8	Flash Memories	1 mm	85 Cel	8MX16	8M	-40 Cel	256	YES	TIN SILVER COPPER	YES	BOTTOM	R-PBGA-B64	3.6 V	1.2 mm	10 mm	Not Qualified		134217728 bit	2.7 V	100,000 PROGRAM/ERASE CYCLES	8/16	e1			NOR TYPE	.0001 Amp	13 mm	YES	60 ns	3	YES
M29DW128F70ZA1	STMicroelectronics	FLASH	COMMERCIAL	64	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	8K,64K	20 mA	8388608 words	3	YES	3/3.3	16	GRID ARRAY, THIN PROFILE	BGA64,8X8,32	8	Flash Memories	1 mm	70 Cel	8MX16	8M	0 Cel	16,254	YES		YES	BOTTOM	R-PBGA-B64	3.6 V	1.2 mm	10 mm	Not Qualified	BOTTOM/TOP	134217728 bit	2.7 V	100,000 PROGRAM/ERASE CYCLES	8/16		30	240	NOR TYPE	.0001 Amp	13 mm	YES	70 ns	3	YES
M28W320FSB70ZA6T	STMicroelectronics	FLASH	INDUSTRIAL	64	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	4K,32K	20 mA	2097152 words	3	NO	3/3.3	16	GRID ARRAY, THIN PROFILE	BGA64,8X8,40		Flash Memories	1 mm	85 Cel	2MX16	2M	-40 Cel	8,63	YES	TIN LEAD		BOTTOM	R-PBGA-B64	3.6 V	1.2 mm	10 mm	Not Qualified	BOTTOM	33554432 bit	2.7 V	100,000 PROGRAM/ERASE CYCLES; BOTTOM BOOT BLOCK		e0			NOR TYPE	.00005 Amp	13 mm	YES	70 ns	3	NO
M28W640FST70ZA1	STMicroelectronics	FLASH	COMMERCIAL	64	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	4K,32K	20 mA	4194304 words	3	NO	3/3.3	16	GRID ARRAY, THIN PROFILE	BGA64,8X8,40		Flash Memories	1 mm	70 Cel	4MX16	4M	0 Cel	8,127	YES	TIN LEAD		BOTTOM	R-PBGA-B64	3.6 V	1.2 mm	10 mm	Not Qualified	TOP	67108864 bit	2.7 V	100,000 PROGRAM/ERASE CYCLES; TOP BOOT BLOCK		e0			NOR TYPE	.00005 Amp	13 mm	YES	70 ns	3	NO

Flash Memory

Flash memory is a type of non-volatile computer memory that is commonly used in digital devices such as USB drives, solid-state drives, and digital cameras. It is a type of EEPROM (Electrically Erasable Programmable Read-Only Memory) that allows data to be erased and reprogrammed in blocks instead of one byte at a time. Flash memory uses a floating gate transistor to store data, which allows it to retain information even when the power is turned off.

Flash memory is widely used in digital devices because of its high capacity, small size, and fast access times. It is also more durable than other types of memory, such as hard disk drives, because it has no moving parts. This makes it ideal for use in portable devices that may be subject to physical shock or vibration.

There are two types of flash memory: NOR flash and NAND flash. NOR flash is faster than NAND flash, but it has lower density and higher cost per bit. NOR flash is typically used for code storage, such as firmware or boot code, because it provides faster access times. NAND flash has higher density and lower cost per bit, which makes it ideal for data storage applications.

Flash memory has a limited lifespan, as it can only be erased and reprogrammed a limited number of times. This is because the process of erasing and reprogramming the memory causes wear and tear on the floating gate transistor. However, modern flash memory devices have a sophisticated wear-leveling algorithm that distributes writes evenly across the memory, which extends the lifespan of the device.