TBGA Flash Memory 2,400+

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Screening Level	Terminal Form	Parallel or Serial	Operating Mode	Sector Size (Words)	Maximum Supply Current	No. of Words	Nominal Supply Voltage / Vsup (V)	Toggle Bit	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Alternate Memory Width	Sub-Category	Minimum Data Retention Time	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	No. of Sectors/Size	Command User Interface	Terminal Finish	Ready or Busy	Terminal Position	Write Protection	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Endurance	Maximum Clock Frequency (fCLK)	Width	Qualification	Maximum Write Cycle Time (tWC)	Serial Bus Type	Boot Block	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	Page Size (words)	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Type	Maximum Standby Current	Length	Common Flash Interface	Maximum Access Time	Programming Voltage (V)	Data Polling
MT25QU128ABA8E12-0AAT	Micron Technology	FLASH	INDUSTRIAL	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	SERIAL	SYNCHRONOUS			134217728 words	1.8			1	GRID ARRAY, THIN PROFILE					1 mm	105 Cel		128MX1	128M	-40 Cel			TIN SILVER COPPER		BOTTOM		R-PBGA-B24		2 V	1.2 mm		166 MHz	6 mm					134217728 bit	1.7 V			e1	30	260	NOR TYPE		8 mm			1.8
S25FL128SAGBHIA10	Infineon Technologies	FLASH	INDUSTRIAL	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS		100 mA	33554432 words	3		3/3.3	4	GRID ARRAY, THIN PROFILE	BGA24,5X5,40	2	Flash Memories	20	1 mm	85 Cel		32MX4	32M	-40 Cel					BOTTOM	HARDWARE/SOFTWARE	R-PBGA-B24	3	3.6 V	1.2 mm	100000 Write/Erase Cycles	133 MHz	6 mm	Not Qualified	500 ms	SPI		134217728 bit	2.7 V	ALSO CONFIGURABLE AS 128M X 1					NOR TYPE	.0001 Amp	8 mm			3
S25FL256SAGBHIA10	Infineon Technologies	FLASH	INDUSTRIAL	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS		100 mA	67108864 words	3		3/3.3	4	GRID ARRAY, THIN PROFILE	BGA24,5X5,40	2	Flash Memories	20	1 mm	85 Cel		64MX4	64M	-40 Cel			TIN SILVER COPPER		BOTTOM	HARDWARE/SOFTWARE	R-PBGA-B24	3	3.6 V	1.2 mm	100000 Write/Erase Cycles	133 MHz	6 mm	Not Qualified	500 ms	SPI	BOTTOM	268435456 bit	2.7 V	ALSO CONFIGURABLE AS 128M X 1		e1			NOR TYPE	.0001 Amp	8 mm			3
MX25U51245GXDI00	Macronix	FLASH	INDUSTRIAL	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS		40 mA	67108864 words	1.8			8	GRID ARRAY, THIN PROFILE	BGA24,5X5,40			20	1 mm	85 Cel	3-STATE	64MX8	64M	-40 Cel			TIN SILVER COPPER		BOTTOM	HARDWARE/SOFTWARE	R-PBGA-B24		2 V	1.2 mm	100000 Write/Erase Cycles	166 MHz	6 mm			SPI		536870912 bit	1.65 V			e1			NOR TYPE	.00005 Amp	8 mm			1.8
M29W128GL70ZA6E	STMicroelectronics	FLASH	INDUSTRIAL	64	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	128K	20 mA	8388608 words	3	YES	3/3.3	16	GRID ARRAY, THIN PROFILE	BGA64,8X8,40	8	Flash Memories		1 mm	85 Cel		8MX16	8M	-40 Cel	128	YES		YES	BOTTOM		R-PBGA-B64		3.6 V	1.2 mm			10 mm	Not Qualified				134217728 bit	2.7 V		8/16		40	260	NOR TYPE	.0001 Amp	13 mm	YES	70 ns	3	YES
PC28F640P33BF60A	Micron Technology	FLASH	INDUSTRIAL	64	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	16K,64K	28 mA	4194304 words	3	NO	2.5/3.3	16	GRID ARRAY, THIN PROFILE	BGA64,8X8,40		Flash Memories		1 mm	85 Cel		4MX16	4M	-40 Cel	4,63	YES	TIN SILVER COPPER		BOTTOM		R-PBGA-B64		3.6 V	1.2 mm			8 mm	Not Qualified			BOTTOM	67108864 bit	2.3 V	SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE	8	e1			NOR TYPE	.002 Amp	10 mm	YES	60 ns	3	NO
RC28F256P33TFE	Micron Technology	FLASH	INDUSTRIAL	64	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS	16K,64K	31 mA	16777216 words	3	NO	2.5/3.3	16	GRID ARRAY, THIN PROFILE	BGA64,8X8,40		Flash Memories		1 mm	85 Cel		16MX16	16M	-40 Cel	4,255	YES	TIN SILVER COPPER		BOTTOM		R-PBGA-B64		3.6 V	1.2 mm			10 mm	Not Qualified			TOP	268435456 bit	2.3 V	TOP BOOT BLOCK, SYNCHRONOUS BURST MODE OPERATION ALSO AVAILABLE		e1			NOR TYPE	.00021 Amp	13 mm	YES	95 ns	3	NO
MT25QL01GBBB8E12-0AUT	Micron Technology	FLASH	AUTOMOTIVE	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	SERIAL	SYNCHRONOUS		55 mA	134217728 words	3			8	GRID ARRAY, THIN PROFILE	BGA24,5X5,40	1		20	1 mm	125 Cel	3-STATE	128MX8	128M	-40 Cel					BOTTOM	HARDWARE/SOFTWARE	R-PBGA-B24		3.6 V	1.2 mm		133 MHz	6 mm			SPI		1073741824 bit	2.7 V				NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.0006 Amp	8 mm
S25FL256SAGBHIA00	Infineon Technologies	FLASH	INDUSTRIAL	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS		100 mA	67108864 words	3		3/3.3	4	GRID ARRAY, THIN PROFILE	BGA24,5X5,40	2	Flash Memories	20	1 mm	85 Cel		64MX4	64M	-40 Cel			TIN SILVER COPPER		BOTTOM	HARDWARE/SOFTWARE	R-PBGA-B24	3	3.6 V	1.2 mm	100000 Write/Erase Cycles	133 MHz	6 mm	Not Qualified	500 ms	SPI	BOTTOM	268435456 bit	2.7 V	ALSO CONFIGURABLE AS 128M X 1		e1			NOR TYPE	.0001 Amp	8 mm			3
S25FL128LAGBHV030	Infineon Technologies	FLASH	INDUSTRIAL	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS		50 mA	16777216 words	3			8	GRID ARRAY, THIN PROFILE	BGA24,4X6,40			20	1 mm	105 Cel	3-STATE	16MX8	16M	-40 Cel					BOTTOM	HARDWARE/SOFTWARE	R-PBGA-B24	3	3.6 V	1.2 mm	100000 Write/Erase Cycles	133 MHz	6 mm			SPI		134217728 bit	2.7 V						NOR TYPE	.00006 Amp	8 mm			3
MTFC8GAMALNA-AIT	Micron Technology	FLASH CARD	INDUSTRIAL	100	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS			8589934592 words				8	GRID ARRAY, THIN PROFILE					1 mm	85 Cel		8GX8	8G	-40 Cel			TIN SILVER COPPER		BOTTOM		R-PBGA-B100		3.6 V	1.2 mm			14 mm					68719476736 bit	2.7 V			e1	30	260			18 mm			2.7
MX25L25645GXDI-08G	Macronix	FLASH	INDUSTRIAL	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS		25 mA	33554432 words	3			8	GRID ARRAY, THIN PROFILE	BGA24,5X5,40			20	1 mm	85 Cel	3-STATE	32MX8	32M	-40 Cel			TIN SILVER COPPER		BOTTOM	HARDWARE/SOFTWARE	R-PBGA-B24		3.6 V	1.2 mm	100000 Write/Erase Cycles	120 MHz	6 mm			SPI		268435456 bit	2.7 V			e1			NOR TYPE	.00002 Amp	8 mm			3
MX25L51245GXDI-08G	Macronix	FLASH	INDUSTRIAL	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS			134217728 words	3			4	GRID ARRAY, THIN PROFILE		2			1 mm	85 Cel		128MX4	128M	-40 Cel					BOTTOM		R-PBGA-B24		3.6 V	1.2 mm		166 MHz	6 mm					536870912 bit	2.7 V	ALSO CONFIGURED WITH 1-BIT WIDTH			NOT SPECIFIED	NOT SPECIFIED			8 mm			3
MT25QU01GBBB8E12-0AAT	Micron Technology	FLASH	INDUSTRIAL	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	SERIAL	SYNCHRONOUS			128057344 words	1.8			8	GRID ARRAY, THIN PROFILE		1			1 mm	105 Cel		128MX8	128M	-40 Cel					BOTTOM		R-PBGA-B24		2 V	1.2 mm		166 MHz	6 mm					1024458752 bit	1.7 V				30	260			8 mm			1.8
MX25UM51345GXDI00	Macronix	FLASH	INDUSTRIAL	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS			67108864 words	1.8			8	GRID ARRAY, THIN PROFILE		1			1 mm	85 Cel		64MX8	64M	-40 Cel					BOTTOM		R-PBGA-B24		2 V	1.2 mm		200 MHz	6 mm					536870912 bit	1.65 V								8 mm			1.8
PC28F128J3F75B	Micron Technology	FLASH	INDUSTRIAL	64	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	128K	80 mA	8388608 words	3	NO	3/3.3	16	GRID ARRAY, THIN PROFILE	BGA64,8X8,40	8	Flash Memories		1 mm	85 Cel		8MX16	8M	-40 Cel	128	YES	Tin/Silver/Copper (Sn/Ag/Cu)	YES	BOTTOM		R-PBGA-B64		3.6 V	1.2 mm			10 mm	Not Qualified				134217728 bit	2.7 V		4/8	e1	30	260	NOR TYPE	.00012 Amp	13 mm	YES	75 ns	2.7	NO
S25FL256SAGBHIC00	Infineon Technologies	FLASH	INDUSTRIAL	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS		100 mA	67108864 words	3		3/3.3	4	GRID ARRAY, THIN PROFILE	BGA24,5X5,40	2	Flash Memories	20	1 mm	85 Cel		64MX4	64M	-40 Cel			TIN SILVER COPPER		BOTTOM	HARDWARE/SOFTWARE	R-PBGA-B24	3	3.6 V	1.2 mm	100000 Write/Erase Cycles	133 MHz	6 mm	Not Qualified	500 ms	SPI		268435456 bit	2.7 V	ALSO CONFIGURABLE AS 128M X 1		e1			NOR TYPE	.0001 Amp	8 mm			3
N25Q128A13B1240E	Micron Technology	FLASH	INDUSTRIAL	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS		20 mA	16777216 words	3		3/3.3	8	GRID ARRAY, THIN PROFILE	BGA24,5X5,40		Flash Memories	20	1 mm	85 Cel		16MX8	16M	-40 Cel			TIN SILVER COPPER		BOTTOM	HARDWARE/SOFTWARE	R-PBGA-B24		3.6 V	1.2 mm	100000 Write/Erase Cycles	108 MHz	6 mm	Not Qualified		SPI	BOTTOM	134217728 bit	2.7 V			e1			NOR TYPE	.0001 Amp	8 mm			3
MT25QL02GCBB8E12-0AUT	Micron Technology	FLASH	AUTOMOTIVE	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	SERIAL	SYNCHRONOUS		85 mA	268435456 words	3			8	GRID ARRAY, THIN PROFILE	BGA24,5X5,40			20	1 mm	125 Cel	3-STATE	256MX8	256M	-40 Cel					BOTTOM	HARDWARE/SOFTWARE	R-PBGA-B24		3.6 V	1.2 mm	100000 Write/Erase Cycles	133 MHz	6 mm			SPI	BOTTOM/TOP	2147483648 bit	2.7 V						NOR TYPE	.0005 Amp	8 mm			3
PC28F256P33BFE	Micron Technology	FLASH	INDUSTRIAL	64	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS	16K,64K	31 mA	16777216 words	3	NO	2.5/3.3	16	GRID ARRAY, THIN PROFILE	BGA64,8X8,40		Flash Memories		1 mm	85 Cel		16MX16	16M	-40 Cel	4,255	YES	TIN SILVER COPPER		BOTTOM		R-PBGA-B64		3.6 V	1.2 mm			10 mm	Not Qualified			BOTTOM	268435456 bit	2.3 V	BOTTOM BOOT BLOCK, SYNCHRONOUS BURST MODE OPERATION ALSO AVAILABLE		e1			NOR TYPE	.00021 Amp	13 mm	YES	95 ns	3	NO
MT25QL512ABB8E12-0AUT	Micron Technology	FLASH	AUTOMOTIVE	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	SERIAL	SYNCHRONOUS			67108864 words	3			8	GRID ARRAY, THIN PROFILE					1 mm	125 Cel		64MX8	64M	-40 Cel					BOTTOM		R-PBGA-B24		3.6 V	1.2 mm		133 MHz	6 mm					536870912 bit	2.7 V				NOT SPECIFIED	NOT SPECIFIED			8 mm			3
W25Q32JVTCIQ	Winbond Electronics	FLASH	INDUSTRIAL	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS			4194304 words	3.3			8	GRID ARRAY, THIN PROFILE		1			1 mm	85 Cel		4MX8	4M	-40 Cel			TIN SILVER COPPER		BOTTOM		R-PBGA-B24		3.6 V	1.2 mm		133 MHz	6 mm					33554432 bit	3 V	2.7V NOMINAL AVAILABLE WITH 104MHZ		e1		260			8 mm			3
W25Q32JVTCIM	Winbond Electronics	FLASH	INDUSTRIAL	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS			4194304 words	3			8	GRID ARRAY, THIN PROFILE					1 mm	85 Cel		4MX8	4M	-40 Cel					BOTTOM		R-PBGA-B24		3.6 V	1.2 mm		133 MHz	6 mm					33554432 bit	2.7 V				NOT SPECIFIED	NOT SPECIFIED			8 mm			3
IS25WP064A-RHLE	Integrated Silicon Solution	FLASH	INDUSTRIAL	24	TBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS		29 mA	8388608 words	1.8			8	GRID ARRAY, THIN PROFILE	BGA24,5X5,40	1		20	1 mm	105 Cel	3-STATE	8MX8	8M	-40 Cel			TIN SILVER COPPER		BOTTOM	HARDWARE/SOFTWARE	S-PBGA-B24		1.95 V	1.2 mm	100000 Write/Erase Cycles	133 MHz	5 mm			SPI		67108864 bit	1.65 V			e1	10	260	NOR TYPE	.000035 Amp	5 mm			1.8
MTFC16GAPALNA-AAT	Micron Technology	FLASH CARD	INDUSTRIAL	100	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS			17179869184 words				8	GRID ARRAY, THIN PROFILE					1 mm	105 Cel		16GX8	16G	-40 Cel			TIN SILVER COPPER		BOTTOM		R-PBGA-B100		3.6 V	1.2 mm			14 mm					137438953472 bit	2.7 V			e1	30	260			18 mm			2.7
S25FL256LAGBHI023	Infineon Technologies	FLASH	INDUSTRIAL	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS		50 mA	33554432 words	3			8	GRID ARRAY, THIN PROFILE	BGA24,5X5,40			20	1 mm	85 Cel	3-STATE	32MX8	32M	-40 Cel					BOTTOM	HARDWARE/SOFTWARE	R-PBGA-B24	3	3.6 V	1.2 mm	100000 Write/Erase Cycles	133 MHz	6 mm			SPI		268435456 bit	2.7 V						NOR TYPE	.00006 Amp	8 mm			3
S25FL256SAGBHV200	Infineon Technologies	FLASH	INDUSTRIAL	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS		100 mA	67108864 words	3		3/3.3	4	GRID ARRAY, THIN PROFILE	BGA24,5X5,40	2	Flash Memories	20	1 mm	105 Cel		64MX4	64M	-40 Cel			TIN SILVER COPPER		BOTTOM	HARDWARE/SOFTWARE	R-PBGA-B24	3	3.6 V	1.2 mm	100000 Write/Erase Cycles	133 MHz	6 mm	Not Qualified	500 ms	SPI		268435456 bit	2.7 V	ALSO CONFIGURABLE AS 128M X 1		e1			NOR TYPE	.0003 Amp	8 mm			3
S25FL512SDSBHI210	Infineon Technologies	FLASH	INDUSTRIAL	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS		100 mA	64094208 words	3			8	GRID ARRAY, THIN PROFILE	BGA24,5X5,40	4		20	1 mm	85 Cel	3-STATE	64MX8	64M	-40 Cel			TIN SILVER COPPER		BOTTOM	HARDWARE/SOFTWARE	R-PBGA-B24	3	3.6 V	1.2 mm	100000 Write/Erase Cycles	80 MHz	6 mm			SPI		512753664 bit	2.7 V			e1			NOR TYPE	.0003 Amp	8 mm			3
W25Q32JVTBIQ	Winbond Electronics	FLASH	INDUSTRIAL	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS			4194304 words	3.3			8	GRID ARRAY, THIN PROFILE		1			1 mm	85 Cel		4MX8	4M	-40 Cel			TIN SILVER COPPER		BOTTOM		R-PBGA-B24		3.6 V	1.2 mm		133 MHz	6 mm					33554432 bit	3 V	2.7V NOMINAL AVAILABLE WITH 104MHZ		e1		260			8 mm			3
MT29F2G01ABAGD12-AAT:G	Micron Technology	FLASH		24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS		35 mA	268435456 words	3.3			8	GRID ARRAY, THIN PROFILE	BGA24,5X5,40			10	1 mm	105 Cel		256MX8	256M	-40 Cel					BOTTOM	HARDWARE/SOFTWARE	R-PBGA-B24		3.6 V	1.2 mm	100000 Write/Erase Cycles	133 MHz	6 mm			SPI		2147483648 bit	2.7 V						SLC NAND TYPE	.00005 Amp	8 mm			3.3
W25N01GVTBIT	Winbond Electronics	FLASH	INDUSTRIAL	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS		35 mA	1073741824 words	3		3/3.3	1	GRID ARRAY, THIN PROFILE	BGA24,5X5,40		Flash Memories	10	1 mm	85 Cel		1GX1	1G	-40 Cel					BOTTOM	HARDWARE/SOFTWARE	R-PBGA-B24		3.6 V	1.2 mm	100000 Write/Erase Cycles	104 MHz	6 mm	Not Qualified		SPI		1073741824 bit	2.7 V				NOT SPECIFIED	NOT SPECIFIED	SLC NAND TYPE	.00005 Amp	8 mm			3
MT25QL01GBBB8E12-0AAT	Micron Technology	FLASH	INDUSTRIAL	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	SERIAL	SYNCHRONOUS			1073741824 words	3			1	GRID ARRAY, THIN PROFILE					1 mm	105 Cel		1GX1	1G	-40 Cel					BOTTOM		R-PBGA-B24		3.6 V	1.2 mm		133 MHz	6 mm					1073741824 bit	2.7 V				NOT SPECIFIED	NOT SPECIFIED			8 mm			3
MTFC4GACAANA-4MIT	Micron Technology	FLASH CARD	INDUSTRIAL	100	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS			4294967296 words	3.3			8	GRID ARRAY, THIN PROFILE	BGA100,10X17,40				1 mm	85 Cel	OPEN-DRAIN	4GX8	4G	-40 Cel			TIN SILVER COPPER		BOTTOM		R-PBGA-B100		3.6 V	1.2 mm		52 MHz	14 mm					34359738368 bit	2.7 V				30	260	MLC NAND TYPE		18 mm			3.3
W25Q256JVBIQ	Winbond Electronics	FLASH	INDUSTRIAL	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS		25 mA	33554432 words	3.3			8	GRID ARRAY, THIN PROFILE	BGA24,5X5,40			20	1 mm	85 Cel	3-STATE	32MX8	32M	-40 Cel					BOTTOM	HARDWARE/SOFTWARE	R-PBGA-B24		3.6 V	1.2 mm	100000 Write/Erase Cycles	133 MHz	6 mm			SPI		268435456 bit	3 V	ALSO OPERATES AT 104MHZ AT 2.7-3.0V			NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.00002 Amp	8 mm			3.3
W25Q256JWBIQ	Winbond Electronics	FLASH	INDUSTRIAL	8	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS		12 mA	33554432 words	1.8			8	GRID ARRAY, THIN PROFILE	BGA24,5X5,40			20	1 mm	85 Cel		32MX8	32M	-40 Cel					BOTTOM	HARDWARE/SOFTWARE	R-PBGA-B24		1.95 V	1.2 mm	100000 Write/Erase Cycles	133 MHz	6 mm			SPI		268435456 bit	1.7 V				NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.0001 Amp	8 mm			1.8
MT35XU512ABA1G12-0AAT	Micron Technology	FLASH	INDUSTRIAL	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	SERIAL	SYNCHRONOUS			536870912 words	1.8			1	GRID ARRAY, THIN PROFILE					1 mm	105 Cel		512MX1	512M	-40 Cel			TIN SILVER COPPER		BOTTOM		R-PBGA-B24		2 V	1.2 mm		166 MHz	6 mm					536870912 bit	1.7 V			e1	30	260			8 mm			1.8
MTFC4GACAALT-4MIT	Micron Technology	FLASH		100	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS			4294967296 words	3.3			8	GRID ARRAY, THIN PROFILE	BGA100,10X17,40				1 mm	85 Cel	OPEN-DRAIN	4GX8	4G	-40 Cel		NO	Tin/Silver/Copper (Sn/Ag/Cu)		BOTTOM		R-PBGA-B100		3.6 V	1.2 mm		52 MHz	14 mm					34359738368 bit	2.7 V			e1	30	260	MLC NAND TYPE		18 mm			3.3	NO
MT25QU256ABA8E12-0AUT	Micron Technology	FLASH	AUTOMOTIVE	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	SERIAL	SYNCHRONOUS			33554432 words	1.8			8	GRID ARRAY, THIN PROFILE		1			1 mm	125 Cel		32MX8	32M	-40 Cel					BOTTOM		R-PBGA-B24		2 V	1.2 mm		166 MHz	6 mm					268435456 bit	1.7 V				NOT SPECIFIED	NOT SPECIFIED			8 mm			1.8
MT29F8G01ADBFD12-AAT:F	Micron Technology	FLASH		24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	SERIAL	SYNCHRONOUS		35 mA	1073741824 words	1.8			8	GRID ARRAY, THIN PROFILE	BGA24,5X5,40	2		10	1 mm	105 Cel	3-STATE	1GX8	1G	-40 Cel					BOTTOM	HARDWARE/SOFTWARE	R-PBGA-B24		1.95 V	1.2 mm	100000 Write/Erase Cycles	83 MHz	6 mm			SPI		8589934592 bit	1.7 V	CONFIGURABLE AS 8G X 1					SLC NAND TYPE	.00005 Amp	8 mm			1.8
MTFC64GAPALNA-AAT	Micron Technology	FLASH CARD	INDUSTRIAL	100	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS			68719476736 words				8	GRID ARRAY, THIN PROFILE					1 mm	105 Cel		64GX8	64G	-40 Cel			TIN SILVER COPPER		BOTTOM		R-PBGA-B100		3.6 V	1.2 mm			14 mm					549755813888 bit	2.7 V			e1	30	260			18 mm			2.7
MX66L1G45GXDI-10G	Macronix	FLASH	INDUSTRIAL	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS			268435456 words	3			4	GRID ARRAY, THIN PROFILE		2			1 mm	85 Cel		256MX4	256M	-40 Cel			TIN SILVER COPPER		BOTTOM		R-PBGA-B24		3.6 V	1.2 mm		104 MHz	6 mm					1073741824 bit	2.7 V	ALSO IT CAN BE CONFIGURED AS 1G X 1 BIT		e1					8 mm			2.7
S70FS01GSDSBHI210	Infineon Technologies	FLASH	INDUSTRIAL	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS			268435456 words	1.8			4	GRID ARRAY, THIN PROFILE		2			1 mm	85 Cel		256MX4	256M	-40 Cel					BOTTOM		R-PBGA-B24	3	2 V	1.2 mm		80 MHz	6 mm					1073741824 bit	1.7 V	IT ALSO HAVE MEMORY WIDTH X1							8 mm			1.8
PC28F512P33BFD	Micron Technology	FLASH	INDUSTRIAL	64	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS			33554432 words	3			16	GRID ARRAY, THIN PROFILE					1 mm	85 Cel		32MX16	32M	-40 Cel			TIN SILVER COPPER		BOTTOM		R-PBGA-B64		3.6 V	1.2 mm			8 mm				BOTTOM	536870912 bit	2.3 V	BOTTOM BOOT; IT ALSO OPERATES IN ASYNCHRONOUS MODE		e1					10 mm		95 ns	3
W25N01GVTCIG	Winbond Electronics	FLASH	INDUSTRIAL	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS		35 mA	1073741824 words	3		3/3.3	1	GRID ARRAY, THIN PROFILE	BGA24,4X6,40		Flash Memories	10	1 mm	85 Cel		1GX1	1G	-40 Cel					BOTTOM	HARDWARE/SOFTWARE	R-PBGA-B24		3.6 V	1.2 mm	100000 Write/Erase Cycles	104 MHz	6 mm	Not Qualified		SPI		1073741824 bit	2.7 V				NOT SPECIFIED	NOT SPECIFIED	SLC NAND TYPE	.00005 Amp	8 mm			3
MT25QL128ABA8E12-1SIT	Micron Technology	FLASH	INDUSTRIAL	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS		35 mA		3			8	GRID ARRAY, THIN PROFILE	BGA24,5X5,40			20	1 mm	85 Cel		16MX8	16M	-40 Cel			TIN SILVER COPPER		BOTTOM	HARDWARE/SOFTWARE	R-PBGA-B24		3.6 V	1.2 mm	100000 Write/Erase Cycles	133 MHz	6 mm			SPI		134217728 bit	2.7 V			e1	30	260	NOR TYPE	.00005 Amp	8 mm			3
MT25QU256ABA8E12-0AUTTR	Micron Technology	FLASH		24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	SERIAL	SYNCHRONOUS		35 mA	33554432 words	1.8			8	GRID ARRAY, THIN PROFILE	BGA24,5X5,40			20	1 mm	125 Cel		32MX8	32M	-40 Cel					BOTTOM	HARDWARE/SOFTWARE	R-PBGA-B24		2 V	1.2 mm	100000 Write/Erase Cycles	166 MHz	6 mm			SPI		268435456 bit	1.7 V				NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.00018 Amp	8 mm			1.8
AT25SF128A-CCUB-T	Dialog Semiconductor	FLASH	INDUSTRIAL	8	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS			134217728 words	3.3			1	GRID ARRAY, THIN PROFILE					1 mm	85 Cel		128MX1	128M	-40 Cel			TIN		BOTTOM		R-PBGA-B8		3.6 V	1.2 mm		133 MHz	6 mm					134217728 bit	3 V			e3					8 mm			2.7
MT25QU256ABA8E12-0AAT	Micron Technology	FLASH	INDUSTRIAL	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	SERIAL	SYNCHRONOUS			268435456 words	1.8			1	GRID ARRAY, THIN PROFILE					1 mm	105 Cel		256MX1	256M	-40 Cel					BOTTOM		R-PBGA-B24		2 V	1.2 mm		166 MHz	6 mm					268435456 bit	1.7 V				30	260			8 mm			1.8

Flash Memory

Flash memory is a type of non-volatile computer memory that is commonly used in digital devices such as USB drives, solid-state drives, and digital cameras. It is a type of EEPROM (Electrically Erasable Programmable Read-Only Memory) that allows data to be erased and reprogrammed in blocks instead of one byte at a time. Flash memory uses a floating gate transistor to store data, which allows it to retain information even when the power is turned off.

Flash memory is widely used in digital devices because of its high capacity, small size, and fast access times. It is also more durable than other types of memory, such as hard disk drives, because it has no moving parts. This makes it ideal for use in portable devices that may be subject to physical shock or vibration.

There are two types of flash memory: NOR flash and NAND flash. NOR flash is faster than NAND flash, but it has lower density and higher cost per bit. NOR flash is typically used for code storage, such as firmware or boot code, because it provides faster access times. NAND flash has higher density and lower cost per bit, which makes it ideal for data storage applications.

Flash memory has a limited lifespan, as it can only be erased and reprogrammed a limited number of times. This is because the process of erasing and reprogramming the memory causes wear and tear on the floating gate transistor. However, modern flash memory devices have a sophisticated wear-leveling algorithm that distributes writes evenly across the memory, which extends the lifespan of the device.