TBGA Flash Memory 2,400+

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Part	Manufacturer	Memory IC Type	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Screening Level	Terminal Form	Parallel or Serial	Operating Mode	Maximum Supply Current	No. of Words	Nominal Supply Voltage / Vsup (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Alternate Memory Width	Minimum Data Retention Time	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	Terminal Position	Write Protection	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Endurance	Maximum Clock Frequency (fCLK)	Width	Maximum Write Cycle Time (tWC)	Serial Bus Type	Memory Density	Minimum Supply Voltage (Vsup)	Type	Maximum Standby Current	Length	Programming Voltage (V)
S25HS02GTDZBHV153	Infineon Technologies	FLASH	24	TBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS	110 mA	268435456 words	1.8	8	GRID ARRAY, THIN PROFILE	BGA24,5X5,40		25	1 mm	105 Cel	3-STATE	256MX8	256M	-40 Cel	BOTTOM	HARDWARE	S-PBGA-B24		2 V	1.2 mm	2560000 Write/Erase Cycles	133 MHz	8 mm		SPI	2147483648 bit	1.7 V	NOR TYPE	.000045 Amp	8 mm	1.8
S25HS02GTDZBHV050	Infineon Technologies	FLASH	24	TBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS	110 mA	268435456 words	1.8	8	GRID ARRAY, THIN PROFILE	BGA24,5X5,40		25	1 mm	105 Cel	3-STATE	256MX8	256M	-40 Cel	BOTTOM	HARDWARE	S-PBGA-B24		2 V	1.2 mm	2560000 Write/Erase Cycles	133 MHz	8 mm		SPI	2147483648 bit	1.7 V	NOR TYPE	.000045 Amp	8 mm	1.8
S25HL02GTDPBHV153	Infineon Technologies	FLASH	24	TBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS	110 mA	268435456 words	3	8	GRID ARRAY, THIN PROFILE	BGA24,5X5,40		25	1 mm	105 Cel	3-STATE	256MX8	256M	-40 Cel	BOTTOM	HARDWARE	S-PBGA-B24		3.6 V	1.2 mm	2560000 Write/Erase Cycles	133 MHz	8 mm		SPI	2147483648 bit	2.7 V	NOR TYPE	.000045 Amp	8 mm	3
S25HL02GTFABHV153	Infineon Technologies	FLASH	24	TBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS	130 mA	268435456 words	3	8	GRID ARRAY, THIN PROFILE	BGA24,5X5,40		25	1 mm	105 Cel	3-STATE	256MX8	256M	-40 Cel	BOTTOM	HARDWARE	S-PBGA-B24		3.6 V	1.2 mm	2560000 Write/Erase Cycles	166 MHz	8 mm		SPI	2147483648 bit	2.7 V	NOR TYPE	.000045 Amp	8 mm	3
S25HL02GTFABHV150	Infineon Technologies	FLASH	24	TBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS	130 mA	268435456 words	3	8	GRID ARRAY, THIN PROFILE	BGA24,5X5,40		25	1 mm	105 Cel	3-STATE	256MX8	256M	-40 Cel	BOTTOM	HARDWARE	S-PBGA-B24		3.6 V	1.2 mm	2560000 Write/Erase Cycles	166 MHz	8 mm		SPI	2147483648 bit	2.7 V	NOR TYPE	.000045 Amp	8 mm	3
S25HL02GTDPBHV150	Infineon Technologies	FLASH	24	TBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS	110 mA	268435456 words	3	8	GRID ARRAY, THIN PROFILE	BGA24,5X5,40		25	1 mm	105 Cel	3-STATE	256MX8	256M	-40 Cel	BOTTOM	HARDWARE	S-PBGA-B24		3.6 V	1.2 mm	2560000 Write/Erase Cycles	133 MHz	8 mm		SPI	2147483648 bit	2.7 V	NOR TYPE	.000045 Amp	8 mm	3
S25HL02GTDPBHM051	Infineon Technologies	FLASH	24	TBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	SERIAL	SYNCHRONOUS	110 mA	268435456 words	3	8	GRID ARRAY, THIN PROFILE	BGA24,5X5,40		25	1 mm	125 Cel	3-STATE	256MX8	256M	-40 Cel	BOTTOM	HARDWARE	S-PBGA-B24		3.6 V	1.2 mm	2560000 Write/Erase Cycles	133 MHz	8 mm		SPI	2147483648 bit	2.7 V	NOR TYPE	.00011 Amp	8 mm	3
S25HL02GTDZBHB053	Infineon Technologies	FLASH	24	TBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	SERIAL	SYNCHRONOUS	110 mA	268435456 words	3	8	GRID ARRAY, THIN PROFILE	BGA24,5X5,40		25	1 mm	105 Cel	3-STATE	256MX8	256M	-40 Cel	BOTTOM	HARDWARE	S-PBGA-B24	3	3.6 V	1.2 mm	300000 Write/Erase Cycles	166 MHz	8 mm		SPI	2147483648 bit	2.7 V	NOR TYPE	.000655 Amp	8 mm	3
S25HS02GTDZBHV051	Infineon Technologies	FLASH	24	TBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS	110 mA	268435456 words	1.8	8	GRID ARRAY, THIN PROFILE	BGA24,5X5,40		25	1 mm	105 Cel	3-STATE	256MX8	256M	-40 Cel	BOTTOM	HARDWARE	S-PBGA-B24		2 V	1.2 mm	2560000 Write/Erase Cycles	133 MHz	8 mm		SPI	2147483648 bit	1.7 V	NOR TYPE	.000045 Amp	8 mm	1.8
S25HL02GTDZBHB050	Infineon Technologies	FLASH	24	TBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	SERIAL	SYNCHRONOUS	110 mA	268435456 words	3	8	GRID ARRAY, THIN PROFILE	BGA24,5X5,40		25	1 mm	105 Cel	3-STATE	256MX8	256M	-40 Cel	BOTTOM	HARDWARE	S-PBGA-B24	3	3.6 V	1.2 mm	300000 Write/Erase Cycles	166 MHz	8 mm		SPI	2147483648 bit	2.7 V	NOR TYPE	.000655 Amp	8 mm	3
S25HS02GTDZBHM050	Infineon Technologies	FLASH	24	TBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	SERIAL	SYNCHRONOUS	110 mA	268435456 words	1.8	8	GRID ARRAY, THIN PROFILE	BGA24,5X5,40		25	1 mm	125 Cel	3-STATE	256MX8	256M	-40 Cel	BOTTOM	HARDWARE	S-PBGA-B24	3	2 V	1.2 mm	300000 Write/Erase Cycles	166 MHz	8 mm		SPI	2147483648 bit	1.7 V	NOR TYPE	.001 Amp	8 mm	1.8
S25HS02GTDZBHM051	Infineon Technologies	FLASH	24	TBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	SERIAL	SYNCHRONOUS	110 mA	268435456 words	1.8	8	GRID ARRAY, THIN PROFILE	BGA24,5X5,40		25	1 mm	125 Cel	3-STATE	256MX8	256M	-40 Cel	BOTTOM	HARDWARE	S-PBGA-B24		2 V	1.2 mm	2560000 Write/Erase Cycles	133 MHz	8 mm		SPI	2147483648 bit	1.7 V	NOR TYPE	.00011 Amp	8 mm	1.8
S25HS02GTDZBHV053	Infineon Technologies	FLASH	24	TBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS	110 mA	268435456 words	1.8	8	GRID ARRAY, THIN PROFILE	BGA24,5X5,40		25	1 mm	105 Cel	3-STATE	256MX8	256M	-40 Cel	BOTTOM	HARDWARE	S-PBGA-B24		2 V	1.2 mm	2560000 Write/Erase Cycles	133 MHz	8 mm		SPI	2147483648 bit	1.7 V	NOR TYPE	.000045 Amp	8 mm	1.8
S25HS02GTDZBHB050	Infineon Technologies	FLASH	24	TBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	SERIAL	SYNCHRONOUS	110 mA	268435456 words	1.8	8	GRID ARRAY, THIN PROFILE	BGA24,5X5,40		25	1 mm	105 Cel	3-STATE	256MX8	256M	-40 Cel	BOTTOM	HARDWARE	S-PBGA-B24	3	2 V	1.2 mm	300000 Write/Erase Cycles	166 MHz	8 mm		SPI	2147483648 bit	1.7 V	NOR TYPE	.00045 Amp	8 mm	1.8
S25HS02GTDPBHB051	Infineon Technologies	FLASH	24	TBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	SERIAL	SYNCHRONOUS	110 mA	268435456 words	1.8	8	GRID ARRAY, THIN PROFILE	BGA24,5X5,40		25	1 mm	105 Cel	3-STATE	256MX8	256M	-40 Cel	BOTTOM	HARDWARE	S-PBGA-B24		2 V	1.2 mm	2560000 Write/Erase Cycles	133 MHz	8 mm		SPI	2147483648 bit	1.7 V	NOR TYPE	.000045 Amp	8 mm	1.8
S25HS02GTDZBHB051	Infineon Technologies	FLASH	24	TBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	SERIAL	SYNCHRONOUS	110 mA	268435456 words	1.8	8	GRID ARRAY, THIN PROFILE	BGA24,5X5,40		25	1 mm	105 Cel	3-STATE	256MX8	256M	-40 Cel	BOTTOM	HARDWARE	S-PBGA-B24		2 V	1.2 mm	2560000 Write/Erase Cycles	133 MHz	8 mm		SPI	2147483648 bit	1.7 V	NOR TYPE	.000045 Amp	8 mm	1.8
S25HS02GTDZBHV150	Infineon Technologies	FLASH	24	TBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS	110 mA	268435456 words	1.8	8	GRID ARRAY, THIN PROFILE	BGA24,5X5,40		25	1 mm	105 Cel	3-STATE	256MX8	256M	-40 Cel	BOTTOM	HARDWARE	S-PBGA-B24		2 V	1.2 mm	2560000 Write/Erase Cycles	133 MHz	8 mm		SPI	2147483648 bit	1.7 V	NOR TYPE	.000045 Amp	8 mm	1.8
S25HS02GTDZBHB053	Infineon Technologies	FLASH	24	TBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	SERIAL	SYNCHRONOUS	110 mA	268435456 words	1.8	8	GRID ARRAY, THIN PROFILE	BGA24,5X5,40		25	1 mm	105 Cel	3-STATE	256MX8	256M	-40 Cel	BOTTOM	HARDWARE	S-PBGA-B24	3	2 V	1.2 mm	300000 Write/Erase Cycles	166 MHz	8 mm		SPI	2147483648 bit	1.7 V	NOR TYPE	.00045 Amp	8 mm	1.8
S25HS02GTDZBHV151	Infineon Technologies	FLASH	24	TBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS	110 mA	268435456 words	1.8	8	GRID ARRAY, THIN PROFILE	BGA24,5X5,40		25	1 mm	105 Cel	3-STATE	256MX8	256M	-40 Cel	BOTTOM	HARDWARE	S-PBGA-B24		2 V	1.2 mm	2560000 Write/Erase Cycles	133 MHz	8 mm		SPI	2147483648 bit	1.7 V	NOR TYPE	.000045 Amp	8 mm	1.8
S25FL129P0XBHI303	Infineon Technologies	FLASH	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS	38 mA	16777216 words	3	8	GRID ARRAY, THIN PROFILE	BGA24,4X6,40		20	1 mm	85 Cel	3-STATE	16MX8	16M	-40 Cel	BOTTOM	HARDWARE/SOFTWARE	R-PBGA-B24		3.6 V	1.2 mm	100000 Write/Erase Cycles	104 MHz	6 mm	50 ms	SPI	134217728 bit	2.7 V	NOR TYPE	.00001 Amp	8 mm	3
S25FL129P0XBHV213	Infineon Technologies	FLASH	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS	38 mA	16777216 words	3	8	GRID ARRAY, THIN PROFILE	BGA24,5X5,40		20	1 mm	105 Cel	3-STATE	16MX8	16M	-40 Cel	BOTTOM	HARDWARE/SOFTWARE	R-PBGA-B24		3.6 V	1.2 mm	100000 Write/Erase Cycles	104 MHz	6 mm	50 ms	SPI	134217728 bit	2.7 V	NOR TYPE	.00001 Amp	8 mm	3
S25HL02GTFABHV051	Infineon Technologies	FLASH	24	TBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS	130 mA	268435456 words	3	8	GRID ARRAY, THIN PROFILE	BGA24,5X5,40		25	1 mm	105 Cel	3-STATE	256MX8	256M	-40 Cel	BOTTOM	HARDWARE	S-PBGA-B24		3.6 V	1.2 mm	2560000 Write/Erase Cycles	166 MHz	8 mm		SPI	2147483648 bit	2.7 V	NOR TYPE	.000045 Amp	8 mm	3
S25HL02GTDPBHV151	Infineon Technologies	FLASH	24	TBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS	110 mA	268435456 words	3	8	GRID ARRAY, THIN PROFILE	BGA24,5X5,40		25	1 mm	105 Cel	3-STATE	256MX8	256M	-40 Cel	BOTTOM	HARDWARE	S-PBGA-B24		3.6 V	1.2 mm	2560000 Write/Erase Cycles	133 MHz	8 mm		SPI	2147483648 bit	2.7 V	NOR TYPE	.000045 Amp	8 mm	3
S25FL129P0XBHV310	Infineon Technologies	FLASH	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS	38 mA	16777216 words	3	8	GRID ARRAY, THIN PROFILE	BGA24,4X6,40		20	1 mm	105 Cel	3-STATE	16MX8	16M	-40 Cel	BOTTOM	HARDWARE/SOFTWARE	R-PBGA-B24		3.6 V	1.2 mm	100000 Write/Erase Cycles	104 MHz	6 mm	50 ms	SPI	134217728 bit	2.7 V	NOR TYPE	.00001 Amp	8 mm	3
S25HL02GTFABHV151	Infineon Technologies	FLASH	24	TBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS	130 mA	268435456 words	3	8	GRID ARRAY, THIN PROFILE	BGA24,5X5,40		25	1 mm	105 Cel	3-STATE	256MX8	256M	-40 Cel	BOTTOM	HARDWARE	S-PBGA-B24		3.6 V	1.2 mm	2560000 Write/Erase Cycles	166 MHz	8 mm		SPI	2147483648 bit	2.7 V	NOR TYPE	.000045 Amp	8 mm	3
S25HS02GTDPBHM051	Infineon Technologies	FLASH	24	TBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	SERIAL	SYNCHRONOUS	110 mA	268435456 words	1.8	8	GRID ARRAY, THIN PROFILE	BGA24,5X5,40		25	1 mm	125 Cel	3-STATE	256MX8	256M	-40 Cel	BOTTOM	HARDWARE	S-PBGA-B24		2 V	1.2 mm	2560000 Write/Erase Cycles	133 MHz	8 mm		SPI	2147483648 bit	1.7 V	NOR TYPE	.00011 Amp	8 mm	1.8
S25HS02GTDPBHV151	Infineon Technologies	FLASH	24	TBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS	110 mA	268435456 words	1.8	8	GRID ARRAY, THIN PROFILE	BGA24,5X5,40		25	1 mm	105 Cel	3-STATE	256MX8	256M	-40 Cel	BOTTOM	HARDWARE	S-PBGA-B24		2 V	1.2 mm	2560000 Write/Erase Cycles	133 MHz	8 mm		SPI	2147483648 bit	1.7 V	NOR TYPE	.000045 Amp	8 mm	1.8
S25HL02GTDPBHB051	Infineon Technologies	FLASH	24	TBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	SERIAL	SYNCHRONOUS	110 mA	268435456 words	3	8	GRID ARRAY, THIN PROFILE	BGA24,5X5,40		25	1 mm	105 Cel	3-STATE	256MX8	256M	-40 Cel	BOTTOM	HARDWARE	S-PBGA-B24		3.6 V	1.2 mm	2560000 Write/Erase Cycles	133 MHz	8 mm		SPI	2147483648 bit	2.7 V	NOR TYPE	.000045 Amp	8 mm	3
S25FL129P0XBHI203	Infineon Technologies	FLASH	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS	38 mA	16777216 words	3	8	GRID ARRAY, THIN PROFILE	BGA24,5X5,40		20	1 mm	85 Cel	3-STATE	16MX8	16M	-40 Cel	BOTTOM	HARDWARE/SOFTWARE	R-PBGA-B24		3.6 V	1.2 mm	100000 Write/Erase Cycles	104 MHz	6 mm	50 ms	SPI	134217728 bit	2.7 V	NOR TYPE	.00001 Amp	8 mm	3
S25FL129P0XBHV210	Infineon Technologies	FLASH	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS	38 mA	16777216 words	3	8	GRID ARRAY, THIN PROFILE	BGA24,5X5,40		20	1 mm	105 Cel	3-STATE	16MX8	16M	-40 Cel	BOTTOM	HARDWARE/SOFTWARE	R-PBGA-B24		3.6 V	1.2 mm	100000 Write/Erase Cycles	104 MHz	6 mm	50 ms	SPI	134217728 bit	2.7 V	NOR TYPE	.00001 Amp	8 mm	3
S25FL129P0XBHV313	Infineon Technologies	FLASH	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS	38 mA	16777216 words	3	8	GRID ARRAY, THIN PROFILE	BGA24,4X6,40		20	1 mm	105 Cel	3-STATE	16MX8	16M	-40 Cel	BOTTOM	HARDWARE/SOFTWARE	R-PBGA-B24		3.6 V	1.2 mm	100000 Write/Erase Cycles	104 MHz	6 mm	50 ms	SPI	134217728 bit	2.7 V	NOR TYPE	.00001 Amp	8 mm	3
S25FL064P0XBHI030	Infineon Technologies	FLASH	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS	26 mA	8388608 words	3	8	GRID ARRAY, THIN PROFILE	BGA24,4X6,40		0.2	1 mm	85 Cel	3-STATE	8MX8	8M	-40 Cel	BOTTOM	HARDWARE/SOFTWARE	R-PBGA-B24		3.6 V	1.2 mm	100000 Write/Erase Cycles	104 MHz	6 mm		SPI	67108864 bit	2.7 V	NOR TYPE	.00001 Amp	8 mm	3
S25FL064P0XBHI023	Infineon Technologies	FLASH	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS	26 mA	8388608 words	3	8	GRID ARRAY, THIN PROFILE	BGA24,5X5,40		0.2	1 mm	85 Cel	3-STATE	8MX8	8M	-40 Cel	BOTTOM	HARDWARE/SOFTWARE	R-PBGA-B24		3.6 V	1.2 mm	100000 Write/Erase Cycles	104 MHz	6 mm		SPI	67108864 bit	2.7 V	NOR TYPE	.00001 Amp	8 mm	3
S25FL064P0XBHI020	Infineon Technologies	FLASH	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS	26 mA	8388608 words	3	8	GRID ARRAY, THIN PROFILE	BGA24,5X5,40		0.2	1 mm	85 Cel	3-STATE	8MX8	8M	-40 Cel	BOTTOM	HARDWARE/SOFTWARE	R-PBGA-B24		3.6 V	1.2 mm	100000 Write/Erase Cycles	104 MHz	6 mm		SPI	67108864 bit	2.7 V	NOR TYPE	.00001 Amp	8 mm	3
S25FL064P0XBHV033	Infineon Technologies	FLASH	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS	26 mA	8388608 words	3	8	GRID ARRAY, THIN PROFILE	BGA24,4X6,40		0.2	1 mm	105 Cel	3-STATE	8MX8	8M	-40 Cel	BOTTOM	HARDWARE/SOFTWARE	R-PBGA-B24		3.6 V	1.2 mm	100000 Write/Erase Cycles	104 MHz	6 mm		SPI	67108864 bit	2.7 V	NOR TYPE	.00001 Amp	8 mm	3
S25FL064P0XBHV030	Infineon Technologies	FLASH	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS	26 mA	8388608 words	3	8	GRID ARRAY, THIN PROFILE	BGA24,4X6,40		0.2	1 mm	105 Cel	3-STATE	8MX8	8M	-40 Cel	BOTTOM	HARDWARE/SOFTWARE	R-PBGA-B24		3.6 V	1.2 mm	100000 Write/Erase Cycles	104 MHz	6 mm		SPI	67108864 bit	2.7 V	NOR TYPE	.00001 Amp	8 mm	3
S25FL064P0XBHV023	Infineon Technologies	FLASH	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS	26 mA	8388608 words	3	8	GRID ARRAY, THIN PROFILE	BGA24,5X5,40		0.2	1 mm	105 Cel	3-STATE	8MX8	8M	-40 Cel	BOTTOM	HARDWARE/SOFTWARE	R-PBGA-B24		3.6 V	1.2 mm	100000 Write/Erase Cycles	104 MHz	6 mm		SPI	67108864 bit	2.7 V	NOR TYPE	.00001 Amp	8 mm	3
S25FL064P0XBHV020	Infineon Technologies	FLASH	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS	26 mA	8388608 words	3	8	GRID ARRAY, THIN PROFILE	BGA24,5X5,40		0.2	1 mm	105 Cel	3-STATE	8MX8	8M	-40 Cel	BOTTOM	HARDWARE/SOFTWARE	R-PBGA-B24		3.6 V	1.2 mm	100000 Write/Erase Cycles	104 MHz	6 mm		SPI	67108864 bit	2.7 V	NOR TYPE	.00001 Amp	8 mm	3
S25FL064P0XBHI033	Infineon Technologies	FLASH	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS	26 mA	8388608 words	3	8	GRID ARRAY, THIN PROFILE	BGA24,4X6,40		0.2	1 mm	85 Cel	3-STATE	8MX8	8M	-40 Cel	BOTTOM	HARDWARE/SOFTWARE	R-PBGA-B24		3.6 V	1.2 mm	100000 Write/Erase Cycles	104 MHz	6 mm		SPI	67108864 bit	2.7 V	NOR TYPE	.00001 Amp	8 mm	3
S25FL127SABBHVC00	Infineon Technologies	FLASH	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS	50 mA	16777216 words	3	8	GRID ARRAY, THIN PROFILE	BGA24,5X5,40	4	20	1 mm	105 Cel	3-STATE	16MX8	16M	-40 Cel	BOTTOM	HARDWARE/SOFTWARE	R-PBGA-B24		3.6 V	1.2 mm	100000 Write/Erase Cycles	108 MHz	6 mm		SPI	134217728 bit	2.7 V	NOR TYPE	.0003 Amp	8 mm	3
S25FL127SABBHID03	Infineon Technologies	FLASH	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS	50 mA	16777216 words	3	8	GRID ARRAY, THIN PROFILE	BGA24,4X6,40	4	20	1 mm	85 Cel	3-STATE	16MX8	16M	-40 Cel	BOTTOM	HARDWARE/SOFTWARE	R-PBGA-B24		3.6 V	1.2 mm	100000 Write/Erase Cycles	108 MHz	6 mm		SPI	134217728 bit	2.7 V	NOR TYPE	.0001 Amp	8 mm	3
S25FL127SABBHVD03	Infineon Technologies	FLASH	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS	50 mA	16777216 words	3	8	GRID ARRAY, THIN PROFILE	BGA24,4X6,40	4	20	1 mm	105 Cel	3-STATE	16MX8	16M	-40 Cel	BOTTOM	HARDWARE/SOFTWARE	R-PBGA-B24		3.6 V	1.2 mm	100000 Write/Erase Cycles	108 MHz	6 mm		SPI	134217728 bit	2.7 V	NOR TYPE	.0003 Amp	8 mm	3
S25FL127SABBHIC00	Infineon Technologies	FLASH	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS	50 mA	16777216 words	3	8	GRID ARRAY, THIN PROFILE	BGA24,5X5,40	4	20	1 mm	85 Cel	3-STATE	16MX8	16M	-40 Cel	BOTTOM	HARDWARE/SOFTWARE	R-PBGA-B24		3.6 V	1.2 mm	100000 Write/Erase Cycles	108 MHz	6 mm		SPI	134217728 bit	2.7 V	NOR TYPE	.0001 Amp	8 mm	3
S25FL127SABBHVD00	Infineon Technologies	FLASH	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS	50 mA	16777216 words	3	8	GRID ARRAY, THIN PROFILE	BGA24,4X6,40	4	20	1 mm	105 Cel	3-STATE	16MX8	16M	-40 Cel	BOTTOM	HARDWARE/SOFTWARE	R-PBGA-B24		3.6 V	1.2 mm	100000 Write/Erase Cycles	108 MHz	6 mm		SPI	134217728 bit	2.7 V	NOR TYPE	.0003 Amp	8 mm	3
S25FL127SABBHID00	Infineon Technologies	FLASH	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS	50 mA	16777216 words	3	8	GRID ARRAY, THIN PROFILE	BGA24,4X6,40	4	20	1 mm	85 Cel	3-STATE	16MX8	16M	-40 Cel	BOTTOM	HARDWARE/SOFTWARE	R-PBGA-B24		3.6 V	1.2 mm	100000 Write/Erase Cycles	108 MHz	6 mm		SPI	134217728 bit	2.7 V	NOR TYPE	.0001 Amp	8 mm	3
S25FL127SABBHIC03	Infineon Technologies	FLASH	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS	50 mA	16777216 words	3	8	GRID ARRAY, THIN PROFILE	BGA24,5X5,40	4	20	1 mm	85 Cel	3-STATE	16MX8	16M	-40 Cel	BOTTOM	HARDWARE/SOFTWARE	R-PBGA-B24		3.6 V	1.2 mm	100000 Write/Erase Cycles	108 MHz	6 mm		SPI	134217728 bit	2.7 V	NOR TYPE	.0001 Amp	8 mm	3
S25FL127SABBHVC03	Infineon Technologies	FLASH	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS	50 mA	16777216 words	3	8	GRID ARRAY, THIN PROFILE	BGA24,5X5,40	4	20	1 mm	105 Cel	3-STATE	16MX8	16M	-40 Cel	BOTTOM	HARDWARE/SOFTWARE	R-PBGA-B24		3.6 V	1.2 mm	100000 Write/Erase Cycles	108 MHz	6 mm		SPI	134217728 bit	2.7 V	NOR TYPE	.0003 Amp	8 mm	3
S25FL127SABBHBC00	Infineon Technologies	FLASH	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	SERIAL	SYNCHRONOUS	50 mA	16777216 words	3	8	GRID ARRAY, THIN PROFILE	BGA24,5X5,40	4	20	1 mm	105 Cel	3-STATE	16MX8	16M	-40 Cel	BOTTOM	HARDWARE/SOFTWARE	R-PBGA-B24		3.6 V	1.2 mm	100000 Write/Erase Cycles	108 MHz	6 mm		SPI	134217728 bit	2.7 V	NOR TYPE	.0003 Amp	8 mm	3

Flash Memory

Flash memory is a type of non-volatile computer memory that is commonly used in digital devices such as USB drives, solid-state drives, and digital cameras. It is a type of EEPROM (Electrically Erasable Programmable Read-Only Memory) that allows data to be erased and reprogrammed in blocks instead of one byte at a time. Flash memory uses a floating gate transistor to store data, which allows it to retain information even when the power is turned off.

Flash memory is widely used in digital devices because of its high capacity, small size, and fast access times. It is also more durable than other types of memory, such as hard disk drives, because it has no moving parts. This makes it ideal for use in portable devices that may be subject to physical shock or vibration.

There are two types of flash memory: NOR flash and NAND flash. NOR flash is faster than NAND flash, but it has lower density and higher cost per bit. NOR flash is typically used for code storage, such as firmware or boot code, because it provides faster access times. NAND flash has higher density and lower cost per bit, which makes it ideal for data storage applications.

Flash memory has a limited lifespan, as it can only be erased and reprogrammed a limited number of times. This is because the process of erasing and reprogramming the memory causes wear and tear on the floating gate transistor. However, modern flash memory devices have a sophisticated wear-leveling algorithm that distributes writes evenly across the memory, which extends the lifespan of the device.