TSOP1 Flash Memory 2,400+

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Screening Level	Terminal Form	Parallel or Serial	Operating Mode	Sector Size (Words)	Maximum Supply Current	No. of Words	Nominal Supply Voltage / Vsup (V)	Toggle Bit	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Alternate Memory Width	Sub-Category	Minimum Data Retention Time	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	No. of Sectors/Size	Command User Interface	Terminal Finish	Ready or Busy	Terminal Position	No. of Ports	Write Protection	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Endurance	Maximum Clock Frequency (fCLK)	Width	Qualification	Maximum Write Cycle Time (tWC)	Serial Bus Type	Boot Block	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	Page Size (words)	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Type	Maximum Standby Current	Length	Common Flash Interface	Maximum Access Time	Programming Voltage (V)	Data Polling
K9F1G08U0C-PCB0000	Samsung	FLASH	COMMERCIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS			134217728 words	3.3			8	SMALL OUTLINE, THIN PROFILE					.5 mm	70 Cel		128MX8	128M	0 Cel					DUAL			R-PDSO-G48		3.6 V	1.2 mm			12 mm					1073741824 bit	2.7 V	CONTAINS ADDITIONAL 32M BIT SPARE MEMORY					SLC NAND TYPE		18.4 mm			2.7
LH28F320SKTD-ZR	Sharp Corporation	FLASH	COMMERCIAL	56	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS			2097152 words	3			16	SMALL OUTLINE, THIN PROFILE		8			.5 mm	70 Cel		2MX16	2M	0 Cel					DUAL			R-PDSO-G56		3.6 V	1.19 mm			14 mm	Not Qualified				33554432 bit	2.7 V						NOR TYPE		18.4 mm		120 ns	3
M29W640FB70N6F	STMicroelectronics	FLASH	INDUSTRIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	8K,64K	20 mA	4194304 words	3	YES	3/3.3	16	SMALL OUTLINE, THIN PROFILE	TSSOP48,.8,20	8	Flash Memories		.5 mm	85 Cel		4MX16	4M	-40 Cel	8,127	YES	TIN/TIN BISMUTH	YES	DUAL			R-PDSO-G48		3.6 V	1.2 mm			12 mm	Not Qualified			BOTTOM	67108864 bit	2.7 V		4/8	e3/e6	40	260	NOR TYPE	.0001 Amp	18.4 mm	YES	70 ns	3	YES
MT29F32G08AFACAWP-ITZ:C	Micron Technology	FLASH	INDUSTRIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	512K	50 mA	4294967296 words	3.3	NO	3/3.3	8	SMALL OUTLINE, THIN PROFILE	TSSOP48,.8,20		Flash Memories		.5 mm	85 Cel		4GX8	4G	-40 Cel	8K	YES		YES	DUAL			R-PDSO-G48		3.6 V	1.2 mm			12 mm	Not Qualified				34359738368 bit	2.7 V		4K				SLC NAND TYPE		18.4 mm		20 ns	3.3	NO
MX29F800CBTI-70GTR	Macronix	FLASH	INDUSTRIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS			524288 words	5			16	SMALL OUTLINE, THIN PROFILE		8			.5 mm	85 Cel		512KX16	512K	-40 Cel			MATTE TIN		DUAL			R-PDSO-G48	3	5.5 V	1.2 mm			12 mm				BOTTOM	8388608 bit	4.5 V	BOTTOM BOOT BLOCK		e3			NOR TYPE		18.4 mm		70 ns	5
MX29GL320EBTI-70G	Macronix	FLASH	INDUSTRIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	8K,64K	100 mA	2097152 words	3	YES	3/3.3	16	SMALL OUTLINE, THIN PROFILE	TSSOP48,.8,20	8	Flash Memories		.5 mm	85 Cel		2MX16	2M	-40 Cel	8,63	YES	TIN	YES	DUAL			R-PDSO-G48		3.6 V	1.2 mm			12 mm	Not Qualified			BOTTOM	33554432 bit	2.7 V	BOTTOM BOOT BLOCK	8/16	e3			NOR TYPE	.0001 Amp	18.4 mm	YES	70 ns	3	YES
MX29LV320EBTI-70G	Macronix	FLASH	INDUSTRIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	8K,64K	30 mA	2097152 words	3	YES	3/3.3	16	SMALL OUTLINE, THIN PROFILE	TSSOP48,.8,20	8	Flash Memories		.5 mm	85 Cel		2MX16	2M	-40 Cel	8,63	YES		YES	DUAL			R-PDSO-G48		3.6 V	1.2 mm			12 mm	Not Qualified			BOTTOM	33554432 bit	2.7 V	BOTTOM BOOT BLOCK			NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.000015 Amp	18.4 mm	YES	70 ns	3	YES
MX29LV640ETTI-70G	Macronix	FLASH	INDUSTRIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS			4194304 words	3			16	SMALL OUTLINE, THIN PROFILE		8			.5 mm	85 Cel		4MX16	4M	-40 Cel			MATTE TIN		DUAL			R-PDSO-G48		3.6 V	1.2 mm			12 mm	Not Qualified			TOP	67108864 bit	2.7 V	TOP BOOT BLOCK		e3					18.4 mm		70 ns	3
S29JL064H60TFI003	Infineon Technologies	FLASH	INDUSTRIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	8K,64K	45 mA	4194304 words	3	YES	3/3.3	16	SMALL OUTLINE, THIN PROFILE	TSSOP48,.8,20	8	Flash Memories		.5 mm	85 Cel		4MX16	4M	-40 Cel	16,126	YES	MATTE TIN	YES	DUAL			R-PDSO-G48	3	3.6 V	1.2 mm			12 mm	Not Qualified			BOTTOM/TOP	67108864 bit	2.7 V			e3	40	260	NOR TYPE	.000005 Amp	18.4 mm	YES	60 ns	3	YES
SST39SF010A-70-4C-WHE-T	Microchip Technology	FLASH	COMMERCIAL	32	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	4K	35 mA	131072 words	5	YES	5	8	SMALL OUTLINE, THIN PROFILE	TSSOP32,.56,20		Flash Memories	100	.5 mm	70 Cel	3-STATE	128KX8	128K	0 Cel	32	YES			DUAL	1		R-PDSO-G32		5.5 V	1.2 mm	100000 Write/Erase Cycles		8 mm	Not Qualified				1048576 bit	4.5 V				NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.0001 Amp	12.4 mm		70 ns	5	YES
SST39VF1682-70-4C-EKE	Microchip Technology	FLASH	COMMERCIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	4K	35 mA	2097152 words	3	YES	3/3.3	8	SMALL OUTLINE, THIN PROFILE	TSSOP48,.8,20		Flash Memories	100	.5 mm	70 Cel	3-STATE	2MX8	2M	0 Cel	512	YES	MATTE TIN	YES	DUAL	1		R-PDSO-G48	3	3.6 V	1.2 mm	100000 Write/Erase Cycles		12 mm	Not Qualified			TOP	16777216 bit	2.7 V	TOP BOOT BLOCK		e3	40	260	NOR TYPE	.00002 Amp	18.4 mm	YES	70 ns	3	YES
SST49LF016C-33-4C-WHE	Microchip Technology	FLASH	OTHER	32	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	SYNCHRONOUS	16K,8K,32K,64K	18 mA	2097152 words	3.3	NO	3.3	8	SMALL OUTLINE, THIN PROFILE	TSSOP32,.56,20		Flash Memories		.5 mm	85 Cel		2MX8	2M	0 Cel	1,2,1,31	YES	MATTE TIN	YES	DUAL			R-PDSO-G32	3	3.6 V	1.2 mm		33 MHz	8 mm	Not Qualified			TOP	16777216 bit	3 V			e3			NOR TYPE	.0001 Amp	12.4 mm		11 ns	3	NO
TC58FVB160AFT-70	Toshiba	FLASH	INDUSTRIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	30 mA	1048576 words	3	YES	3/3.3	16	SMALL OUTLINE, THIN PROFILE	TSSOP48,.8,20	8	Flash Memories		.5 mm	85 Cel		1MX16	1M	-40 Cel	1,2,1,31	YES		YES	DUAL			R-PDSO-G48		3.6 V	1.2 mm			12 mm	Not Qualified			BOTTOM	16777216 bit	2.7 V				NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.000005 Amp	18.4 mm	YES	80 ns	3	YES
W29N01HVSINA	Winbond Electronics	FLASH	INDUSTRIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS			134217728 words	3			8	SMALL OUTLINE, THIN PROFILE					.5 mm	85 Cel		128MX8	128M	-40 Cel					DUAL			R-PDSO-G48		3.6 V	1.2 mm			12 mm					1073741824 bit	2.7 V				NOT SPECIFIED	NOT SPECIFIED	SLC NAND TYPE		18.4 mm			3.3
AT45DB321D-TU-SL383	Dialog Semiconductor	FLASH		28	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		17 mA	33554432 words	3			1	SMALL OUTLINE, THIN PROFILE	TSSOP28,.53,22			20	.55 mm	85 Cel	3-STATE	32MX1	32M	-40 Cel					DUAL		HARDWARE/SOFTWARE	R-PDSO-G28		3.6 V	1.2 mm	100000 Write/Erase Cycles	66 MHz	8 mm			SPI		33554432 bit	2.7 V						NOR TYPE	.00005 Amp	11.8 mm			2.7
MT29F16G08AJADAWP-IT:D	Micron Technology	FLASH	INDUSTRIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	128K	35 mA	2147483648 words	3.3	NO	3.3	8	SMALL OUTLINE, THIN PROFILE	TSSOP48,.8,20		Flash Memories		.5 mm	85 Cel		2GX8	2G	-40 Cel	16K	YES		YES	DUAL			R-PDSO-G48		3.6 V	1.2 mm			12 mm	Not Qualified				17179869184 bit	2.7 V		2K		30	260	SLC NAND TYPE	.0001 Amp	18.4 mm		25 ns	3.3	NO
MX29LV400CBTI-70G	Macronix	FLASH	INDUSTRIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	30 mA	4194304 words	3	YES	3/3.3	16	SMALL OUTLINE, THIN PROFILE	TSSOP48,.8,20	8	Flash Memories		.5 mm	85 Cel		4MX16	4M	-40 Cel	1,2,1,7	YES	Tin (Sn)	YES	DUAL			R-PDSO-G48	3	3.6 V	1.2 mm			12 mm	Not Qualified			BOTTOM	67108864 bit	2.7 V			e3			NOR TYPE	.000005 Amp	18.4 mm	YES	70 ns	3	YES
MX30LF1G28AD-TI	Macronix	FLASH		48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	128K	50 mA	134217728 words	3	NO		8	SMALL OUTLINE, THIN PROFILE	TSSOP48,.8,20			10	.5 mm	85 Cel	3-STATE	128MX8	128M	-40 Cel	1K	NO		YES	DUAL			R-PDSO-G48		3.6 V	1.2 mm	60000 Write/Erase Cycles		12 mm		.00002 ms			1073741824 bit	2.7 V		2K				SLC NAND TYPE	.00005 Amp	18.4 mm			3	NO
S34ML16G202TFI200	Cypress Semiconductor	FLASH	INDUSTRIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS			2147483648 words	3.3			8	SMALL OUTLINE, THIN PROFILE					.5 mm	85 Cel		2GX8	2G	-40 Cel			Matte Tin (Sn)		DUAL			R-PDSO-G48	3	3.6 V	1.2 mm			12 mm					17179869184 bit	2.7 V			e3	30	260	SLC NAND TYPE		18.4 mm			3
AT49F1614-90TI	Atmel	FLASH	INDUSTRIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	8K,32K,64K	80 mA	1048576 words	5	YES	5	16	SMALL OUTLINE, THIN PROFILE	TSSOP48,.8,20	8	Flash Memories		.5 mm	85 Cel		1MX16	1M	-40 Cel	8,2,30	YES	TIN LEAD	YES	DUAL			R-PDSO-G48		5.5 V	1.2 mm			12 mm	Not Qualified			BOTTOM	16777216 bit	4.5 V	CONFIGURABLE AS 2M X 8		e0			NOR TYPE	.003 Amp	18.4 mm		90 ns	5	YES
E28F008SA-120	Intel	FLASH	COMMERCIAL	40	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	MOS		GULL WING	PARALLEL	ASYNCHRONOUS	64K	50 mA	1048576 words	5	NO	5	8	SMALL OUTLINE, THIN PROFILE	TSSOP40,.8,20		Flash Memories		.5 mm	70 Cel	3-STATE	1MX8	1M	0 Cel	16	YES	TIN LEAD	YES	DUAL			R-PDSO-G40		5.5 V	1.2 mm			10 mm	Not Qualified				8388608 bit	4.5 V	DEEP POWER-DOWN		e0			NOR TYPE	.0000012 Amp	18.4 mm		120 ns	12	NO
MT28F800B5WG-8BET	Micron Technology	FLASH	INDUSTRIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,96K,128K	55 mA	524288 words	5	NO	5	16	SMALL OUTLINE, THIN PROFILE	TSSOP48,.8,20	8	Flash Memories		.5 mm	85 Cel	3-STATE	512KX16	512K	-40 Cel	1,2,1,7	YES	TIN LEAD		DUAL			R-PDSO-G48		5.5 V	1.2 mm			12 mm	Not Qualified			BOTTOM	8388608 bit	4.5 V	100,000 ERASE CYCLES; BOTTOM BOOT BLOCK		e0			NOR TYPE	.000005 Amp	18.4 mm		80 ns	5	NO
AM29F002NBB-70EI	Infineon Technologies	FLASH	INDUSTRIAL	32	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	40 mA	262144 words	5	YES		8	SMALL OUTLINE, THIN PROFILE	TSSOP32,.8,20			10	.5 mm	85 Cel	3-STATE	256KX8	256K	-40 Cel	1,2,1,3	YES		YES	DUAL			R-PDSO-G32		5.25 V	1.2 mm	1000000 Write/Erase Cycles		8 mm				BOTTOM	2097152 bit	4.75 V						NOR TYPE	.000005 Amp	18.4 mm		70 ns	5	YES
MBM29F160TE-70PFTN	Fujitsu Semiconductor America	FLASH	INDUSTRIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS			1048576 words	5			16	SMALL OUTLINE, THIN PROFILE		8			.5 mm	85 Cel		1MX16	1M	-40 Cel					DUAL			R-PDSO-G48		5.5 V	1.2 mm			12 mm	Not Qualified			TOP	16777216 bit	4.5 V						NOR TYPE		18.4 mm		70 ns	5
MBM29F160TE70PFTN	Fujitsu	FLASH	INDUSTRIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	60 mA	1048576 words	5	YES	5	16	SMALL OUTLINE, THIN PROFILE	TSSOP48,.8,20	8	Flash Memories		.5 mm	85 Cel		1MX16	1M	-40 Cel	1,2,1,31	YES	TIN LEAD	YES	DUAL			R-PDSO-G48		5.5 V	1.2 mm			12 mm	Not Qualified			TOP	16777216 bit	4.5 V	CONFIGURABLE AS 2M X 8		e0			NOR TYPE	.000005 Amp	18.4 mm	YES	70 ns	5	YES
AT49BV162A-70TI	Atmel	FLASH	INDUSTRIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	8K,64K	45 mA	1048576 words	3	YES	3/3.3	16	SMALL OUTLINE, THIN PROFILE	TSSOP48,.8,20	8	Flash Memories		.5 mm	85 Cel		1MX16	1M	-40 Cel	8,31	YES	TIN LEAD	YES	DUAL			R-PDSO-G48	3	3.6 V	1.2 mm			12 mm	Not Qualified			BOTTOM	16777216 bit	2.65 V			e0			NOR TYPE	.000025 Amp	18.4 mm	YES	70 ns	3	YES
M29F800FB55N3E2	Micron Technology	FLASH	AUTOMOTIVE	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	30 mA	524288 words	5	YES	5	16	SMALL OUTLINE, THIN PROFILE	TSSOP48,.8,20	8	Flash Memories		.5 mm	125 Cel		512KX16	512K	-40 Cel	1,2,1,15	YES	Matte Tin (Sn)	YES	DUAL			R-PDSO-G48		5.5 V	1.2 mm			12 mm	Not Qualified			BOTTOM	8388608 bit	4.5 V	BOTTOM BOOT BLOCK		e3	30	260	NOR TYPE	.00012 Amp	18.4 mm	YES	55 ns	5	YES
MT29F2G16ABAEAWP-AIT:ETR	Micron Technology	FLASH	INDUSTRIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS			134217728 words	3.3			16	SMALL OUTLINE, THIN PROFILE					.5 mm	85 Cel		128MX16	128M	-40 Cel					DUAL			R-PDSO-G48		3.6 V	1.2 mm			12 mm					2147483648 bit	2.7 V				NOT SPECIFIED	NOT SPECIFIED	SLC NAND TYPE		18.4 mm			3.3
S34ML08G101TFI000	Cypress Semiconductor	FLASH	INDUSTRIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	128K	30 mA	1073741824 words	3	NO	3/3.3	8	SMALL OUTLINE, THIN PROFILE	TSSOP56,.8,20		Flash Memories		.5 mm	85 Cel		1GX8	1G	-40 Cel	8K	YES	MATTE TIN	YES	DUAL			R-PDSO-G48	3	3.6 V	1.2 mm			12 mm	Not Qualified				8589934592 bit	2.7 V		2K	e3	30	260	SLC NAND TYPE	.00005 Amp	18.4 mm		25 ns	3	NO
AT29LV020-10TU	Atmel	FLASH	INDUSTRIAL	32	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	256	15 mA	262144 words	3.3	YES	3.3	8	SMALL OUTLINE, THIN PROFILE	TSSOP32,.8,20		Flash Memories		.5 mm	85 Cel		256KX8	256K	-40 Cel	1K	NO	Matte Tin (Sn)		DUAL			R-PDSO-G32	3	3.6 V	1.2 mm			8 mm	Not Qualified	20 ms		BOTTOM/TOP	2097152 bit	3 V			e3	30	260	NOR TYPE	.00005 Amp	18.4 mm		100 ns	3	YES
M29W640FT70N6E	STMicroelectronics	FLASH	INDUSTRIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	8K,64K	20 mA	4194304 words	3	YES	3/3.3	16	SMALL OUTLINE, THIN PROFILE	TSSOP48,.8,20	8	Flash Memories		.5 mm	85 Cel		4MX16	4M	-40 Cel	8,127	YES	TIN/TIN BISMUTH	YES	DUAL			R-PDSO-G48		3.6 V	1.2 mm			12 mm	Not Qualified			TOP	67108864 bit	2.7 V		4/8	e3/e6	40	260	NOR TYPE	.0001 Amp	18.4 mm	YES	70 ns	3	YES
MBM29F033C-90PTN	Spansion	FLASH	INDUSTRIAL	40	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	64K	45 mA	4194304 words	5	YES	5	8	SMALL OUTLINE, THIN PROFILE	TSSOP40,.8,20		Flash Memories		.5 mm	85 Cel		4MX8	4M	-40 Cel	64	YES	TIN LEAD	YES	DUAL			R-PDSO-G40		5.5 V	1.2 mm			10 mm	Not Qualified				33554432 bit	4.5 V			e0			NOR TYPE	.000005 Amp	18.4 mm		90 ns	5	YES
TE28F320C3BC90	Intel	FLASH	INDUSTRIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	4K,32K	55 mA	2097152 words	3	NO	1.8/3.3,3/3.3	16	SMALL OUTLINE, THIN PROFILE	TSSOP48,.8,20		Flash Memories		.5 mm	85 Cel		2MX16	2M	-40 Cel	8,63	YES	TIN LEAD		DUAL			R-PDSO-G48		3.6 V	1.2 mm			12 mm	Not Qualified			BOTTOM	33554432 bit	2.7 V	USER-SELECTABLE 3V OR 12V VPP; BOTTOM BOOT BLOCK		e0			NOR TYPE	.000005 Amp	18.4 mm	YES	90 ns	3	NO
AT45DB081B-TC	Atmel	FLASH	COMMERCIAL	28	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		35 mA	1081344 words	3		3/3.3	8	SMALL OUTLINE, THIN PROFILE	TSSOP28,.53,22		Flash Memories		.55 mm	70 Cel		1081344X8	1081344	0 Cel			TIN LEAD		DUAL		HARDWARE	R-PDSO-G28	3	3.6 V	1.2 mm		20 MHz	8 mm	Not Qualified		SPI		8650752 bit	2.7 V	ORGANIZED AS 4096 PAGES OF 264 BYTES EACH		e0		240	NOR TYPE	.00001 Amp	11.8 mm			2.7
MT28F128J3RG-15ET	Micron Technology	FLASH	INDUSTRIAL	56	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	128K	80 mA	8388608 words	3	NO	3/3.3	16	SMALL OUTLINE, THIN PROFILE	TSSOP56,.8,20	8	Flash Memories		.5 mm	85 Cel		8MX16	8M	-40 Cel	128	YES	TIN LEAD	YES	DUAL			R-PDSO-G56		3.6 V	1.2 mm			14 mm	Not Qualified				134217728 bit	2.7 V		4/8	e0			NOR TYPE	.00012 Amp	18.4 mm	YES	150 ns	2.7	NO
MT29F2G16ABAEAWP-AIT:E	Micron Technology	FLASH	INDUSTRIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	PARALLEL	ASYNCHRONOUS	64K	35 mA	134217728 words	3.3	NO	3/3.3	16	SMALL OUTLINE, THIN PROFILE	TSSOP48,.8,20		Flash Memories		.5 mm	85 Cel		128MX16	128M	-40 Cel	2K	YES		YES	DUAL			R-PDSO-G48		3.6 V	1.2 mm			12 mm	Not Qualified				2147483648 bit	2.7 V		1K				SLC NAND TYPE	.0001 Amp	18.4 mm		25 ns	3.3	NO
TE28F800C3BD70	Intel	FLASH	INDUSTRIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	4K,32K	55 mA	524288 words	3	NO	1.8/3.3,3/3.3	16	SMALL OUTLINE, THIN PROFILE	TSSOP48,.8,20		Flash Memories		.5 mm	85 Cel		512KX16	512K	-40 Cel	8,15	YES	TIN LEAD		DUAL			R-PDSO-G48		3.6 V	1.2 mm			12 mm	Not Qualified			BOTTOM	8388608 bit	2.7 V	USER-SELECTABLE 3V OR 12V VPP		e0			NOR TYPE	.000005 Amp	18.4 mm	YES	70 ns	3	NO
AM29DL800BB90EF	Spansion	FLASH	INDUSTRIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	45 mA	524288 words	3	YES	3/3.3	16	SMALL OUTLINE, THIN PROFILE	TSSOP48,.8,20	8	Flash Memories		.5 mm	85 Cel		512KX16	512K	-40 Cel	2,4,2,14	YES	MATTE TIN	YES	DUAL			R-PDSO-G48	3	3.6 V	1.2 mm			12 mm	Not Qualified			BOTTOM	8388608 bit	2.7 V	BOTTOM BOOT BLOCK		e3	40	260	NOR TYPE	.000005 Amp	18.4 mm		90 ns	3	YES
AM29F002NBB-70EF	Infineon Technologies	FLASH	INDUSTRIAL	32	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	40 mA	262144 words	5	YES		8	SMALL OUTLINE, THIN PROFILE	TSSOP32,.8,20			10	.5 mm	85 Cel	3-STATE	256KX8	256K	-40 Cel	1,2,1,3	YES		YES	DUAL			R-PDSO-G32		5.25 V	1.2 mm	1000000 Write/Erase Cycles		8 mm				BOTTOM	2097152 bit	4.75 V						NOR TYPE	.000005 Amp	18.4 mm		70 ns	5	YES
AM29F010B-45EF	Intel	FLASH		32	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	16K	40 mA	131072 words	5	YES		8	SMALL OUTLINE, THIN PROFILE	TSSOP32,.8,20			10	.5 mm	85 Cel	3-STATE	128KX8	128K	-40 Cel	8	YES			DUAL			R-PDSO-G32		5.25 V	1.2 mm	1000000 Write/Erase Cycles		8 mm		.000045 ms			1048576 bit	4.75 V						NOR TYPE	.000005 Amp	18.4 mm		45 ns	5	YES
AM29F010B-45EI	Intel	FLASH		32	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	16K	40 mA	131072 words	5	YES		8	SMALL OUTLINE, THIN PROFILE	TSSOP32,.8,20			20	.5 mm	85 Cel	3-STATE	128KX8	128K	-40 Cel	8	YES			DUAL			R-PDSO-G32		5.25 V	1.2 mm	1000000 Write/Erase Cycles		8 mm		.000045 ms			1048576 bit	4.75 V						NOR TYPE	.000005 Amp	18.4 mm		45 ns	5	YES
AT29C040A-12TC	Atmel	FLASH	COMMERCIAL	32	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	256	40 mA	524288 words	5	YES	5	8	SMALL OUTLINE, THIN PROFILE	TSSOP32,.8,20		Flash Memories		.5 mm	70 Cel	3-STATE	512KX8	512K	0 Cel	2K	NO	TIN LEAD		DUAL			R-PDSO-G32	3	5.5 V	1.2 mm			8 mm	Not Qualified	10 ms		BOTTOM/TOP	4194304 bit	4.5 V	AUTOMATIC WRITE; HARDWARE & SOFTWARE DATA PROTECTION	256	e0		240	NOR TYPE	.0001 Amp	18.4 mm		120 ns	5	YES
AT45DB321-TC	Microchip Technology	FLASH	COMMERCIAL	32	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		35 mA	33554432 words	3		3/3.3	1	SMALL OUTLINE, THIN PROFILE	TSSOP32,.8,20		Flash Memories		.5 mm	70 Cel		32MX1	32M	0 Cel			TIN LEAD		DUAL		HARDWARE	R-PDSO-G32	3	3.6 V	1.2 mm		13 MHz	8 mm	Not Qualified		SPI		33554432 bit	2.7 V	HARDWARE DATA PROTECTION; SPI SERIAL INTERFACE		e0		240	NOR TYPE	.00001 Amp	18.4 mm			2.7
AT45DB642-TI	Atmel	FLASH	INDUSTRIAL	40	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL/SERIAL	SYNCHRONOUS			67108864 words	3			1	SMALL OUTLINE, THIN PROFILE					.5 mm	85 Cel		64MX1	64M	-40 Cel			TIN LEAD		DUAL			R-PDSO-G40	3	3.6 V	1.2 mm			10 mm	Not Qualified				67108864 bit	2.7 V	ORGANISED AS 8192 PAGES OF 1056 BYTES EACH		e0			NOR TYPE		18.4 mm			2.7
AT49F1614-90TC	Atmel	FLASH	COMMERCIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	8K,32K,64K	80 mA	1048576 words	5	YES	5	16	SMALL OUTLINE, THIN PROFILE	TSSOP48,.8,20	8	Flash Memories		.5 mm	70 Cel		1MX16	1M	0 Cel	8,2,30	YES	TIN LEAD	YES	DUAL			R-PDSO-G48		5.5 V	1.2 mm			12 mm	Not Qualified			BOTTOM	16777216 bit	4.5 V	CONFIGURABLE AS 2M X 8		e0			NOR TYPE	.003 Amp	18.4 mm		90 ns	5	YES
AT49LV002-90TC	Atmel	FLASH	COMMERCIAL	32	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,96K,128K	50 mA	262144 words	3.3	YES	3.3	8	SMALL OUTLINE, THIN PROFILE	TSSOP32,.8,20		Flash Memories		.5 mm	70 Cel		256KX8	256K	0 Cel	1,2,1,1	YES	TIN LEAD		DUAL			R-PDSO-G32	3	3.6 V	1.2 mm			8 mm	Not Qualified			BOTTOM	2097152 bit	3 V			e0		240	NOR TYPE	.00005 Amp	18.4 mm		90 ns	3	YES
DD28F032SA-70	Intel	FLASH	COMMERCIAL	56	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	64K	64 mA	4194304 words	5	NO	3.3/5	8	SMALL OUTLINE, THIN PROFILE	TSSOP56,.8,20	16	Flash Memories		.5 mm	70 Cel		4MX8	4M	0 Cel	64	YES	Tin/Lead (Sn/Pb)	YES	DUAL			R-PDSO-G56		5.5 V	1.2 mm			14 mm	Not Qualified				33554432 bit	3 V		128/256	e0			NOR TYPE	.00001 Amp	18.4 mm		70 ns	3	NO
E28F800B5B70	Intel	FLASH	COMMERCIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,96K,128K	70 mA	1048576 words	5	NO	5	8	SMALL OUTLINE, THIN PROFILE	TSSOP48,.8,20	8	Flash Memories		.5 mm	70 Cel		1MX8	1M	0 Cel	1,2,1,7	YES	TIN LEAD		DUAL			R-PDSO-G48		5.5 V	1.2 mm	100000 Write/Erase Cycles		12 mm	Not Qualified			BOTTOM	8388608 bit	4.5 V	CONFG AS 512K X 16; USER SELECTABLE AS 5V OR 12V VPP; BOTTOM BOOT BLOCK		e0			NOR TYPE	.000008 Amp	18.4 mm		80 ns	5	NO

Flash Memory

Flash memory is a type of non-volatile computer memory that is commonly used in digital devices such as USB drives, solid-state drives, and digital cameras. It is a type of EEPROM (Electrically Erasable Programmable Read-Only Memory) that allows data to be erased and reprogrammed in blocks instead of one byte at a time. Flash memory uses a floating gate transistor to store data, which allows it to retain information even when the power is turned off.

Flash memory is widely used in digital devices because of its high capacity, small size, and fast access times. It is also more durable than other types of memory, such as hard disk drives, because it has no moving parts. This makes it ideal for use in portable devices that may be subject to physical shock or vibration.

There are two types of flash memory: NOR flash and NAND flash. NOR flash is faster than NAND flash, but it has lower density and higher cost per bit. NOR flash is typically used for code storage, such as firmware or boot code, because it provides faster access times. NAND flash has higher density and lower cost per bit, which makes it ideal for data storage applications.

Flash memory has a limited lifespan, as it can only be erased and reprogrammed a limited number of times. This is because the process of erasing and reprogramming the memory causes wear and tear on the floating gate transistor. However, modern flash memory devices have a sophisticated wear-leveling algorithm that distributes writes evenly across the memory, which extends the lifespan of the device.