TSOP1 Flash Memory 2,400+

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Screening Level	Terminal Form	Parallel or Serial	Operating Mode	Sector Size (Words)	Maximum Supply Current	No. of Words	Nominal Supply Voltage / Vsup (V)	Toggle Bit	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Alternate Memory Width	Sub-Category	Minimum Data Retention Time	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	No. of Sectors/Size	Command User Interface	Terminal Finish	Ready or Busy	Terminal Position	No. of Ports	Write Protection	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Endurance	Maximum Clock Frequency (fCLK)	Width	Qualification	Maximum Write Cycle Time (tWC)	Serial Bus Type	Boot Block	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	Page Size (words)	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Type	Maximum Standby Current	Length	Common Flash Interface	Maximum Access Time	Programming Voltage (V)	Data Polling
K9F2808U0M-YCB0	Samsung	FLASH	COMMERCIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	16K	20 mA	16777216 words	3.3	NO	3.3	8	SMALL OUTLINE, THIN PROFILE	TSSOP48,.8,20		Flash Memories		.5 mm	70 Cel		16MX8	16M	0 Cel	1K	YES	TIN LEAD	YES	DUAL			R-PDSO-G48		3.6 V	1.2 mm			12 mm	Not Qualified				134217728 bit	2.7 V		512	e0			SLC NAND TYPE	.00005 Amp	18.4 mm		35 ns	2.7	NO
K9WBG08U1M-PIB0	Samsung Electro-mechanics	FLASH	INDUSTRIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS			4294967296 words	3.3			8	SMALL OUTLINE, THIN PROFILE					.5 mm	85 Cel		4GX8	4G	-40 Cel					DUAL			R-PDSO-G48		3.6 V	1.2 mm			12 mm					34359738368 bit	2.7 V								18.4 mm			2.7
M29F160FB5AN6F2	Micron Technology	FLASH	INDUSTRIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	30 mA	1048576 words	5	YES	5	16	SMALL OUTLINE, THIN PROFILE	TSSOP48,.8,20	8	Flash Memories		.5 mm	85 Cel		1MX16	1M	-40 Cel	1,2,1,31	YES	Matte Tin (Sn)	YES	DUAL			R-PDSO-G48		5.5 V	1.2 mm			12 mm	Not Qualified			BOTTOM	16777216 bit	4.5 V	BOTTOM BOOT BLOCK		e3	30	260	NOR TYPE	.00012 Amp	18.4 mm	YES	55 ns	5	YES
MT28F004B5VG-8B	Micron Technology	FLASH	COMMERCIAL	40	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,96K,128K	55 mA	524288 words	5	NO	5	8	SMALL OUTLINE, THIN PROFILE	TSSOP40,.8,20		Flash Memories		.5 mm	70 Cel		512KX8	512K	0 Cel	1,2,1,3	YES	TIN LEAD		DUAL			R-PDSO-G40		5.5 V	1.2 mm			10 mm	Not Qualified			BOTTOM	4194304 bit	4.5 V	100000 ERASE CYCLES; BOTTOM BOOT BLOCK		e0			NOR TYPE	.000005 Amp	18.4 mm		80 ns	5	NO
MT28F008B3VG-10T	Micron Technology	FLASH	COMMERCIAL	40	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,96K,128K	30 mA	1048576 words	3.3	NO	3.3	8	SMALL OUTLINE, THIN PROFILE	TSSOP40,.8,20		Flash Memories		.5 mm	70 Cel		1MX8	1M	0 Cel	1,2,1,7	YES	TIN LEAD		DUAL			R-PDSO-G40		3.6 V	1.2 mm			10 mm	Not Qualified			TOP	8388608 bit	3 V	100,000 ERASE CYCLES, USER SELECTABLE VPP=3.3V/5V/12V; TOP BOOT BLOCK		e0			NOR TYPE	.000005 Amp	18.4 mm		100 ns	3	NO
MT28F008B3VG-10TET	Micron Technology	FLASH	INDUSTRIAL	40	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,96K,128K	30 mA	1048576 words	3.3	NO	3.3	8	SMALL OUTLINE, THIN PROFILE	TSSOP40,.8,20		Flash Memories		.5 mm	85 Cel		1MX8	1M	-40 Cel	1,2,1,7	YES	TIN LEAD		DUAL			R-PDSO-G40		3.6 V	1.2 mm			10 mm	Not Qualified			TOP	8388608 bit	3 V	100,000 ERASE CYCLES, USER SELECTABLE VPP=3.3V/5V/12V; TOP BOOT BLOCK		e0			NOR TYPE	.000005 Amp	18.4 mm		100 ns	3	NO
MT28F800B3WG-9TET	Micron Technology	FLASH	INDUSTRIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,96K,128K	25 mA	524288 words	3.3	NO	3.3	16	SMALL OUTLINE, THIN PROFILE	TSSOP48,.8,20	8	Flash Memories		.5 mm	85 Cel		512KX16	512K	-40 Cel	1,2,1,7	YES	TIN LEAD		DUAL			R-PDSO-G48		3.6 V	1.2 mm	100000 Write/Erase Cycles		12 mm	Not Qualified			TOP	8388608 bit	3 V	100,000 ERASE CYCLES; TOP BOOT BLOCK		e0			NOR TYPE	.000005 Amp	18.4 mm		90 ns	3	NO
MT29F1G08ABAEAWP:E	Micron Technology	FLASH	COMMERCIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS			134217728 words	3.3			8	SMALL OUTLINE, THIN PROFILE					.5 mm	70 Cel		128MX8	128M	0 Cel			Matte Tin (Sn)		DUAL			R-PDSO-G48		3.6 V	1.2 mm			12 mm					1073741824 bit	2.7 V			e3	NOT SPECIFIED	NOT SPECIFIED	SLC NAND TYPE		18.4 mm			2.7
MT29F32G08CBACAWP-Z:C	Micron Technology	FLASH	COMMERCIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS			4294967296 words	3.3			8	SMALL OUTLINE, THIN PROFILE					.5 mm	70 Cel		4GX8	4G	0 Cel					DUAL			R-PDSO-G48		3.6 V	1.2 mm			12 mm					34359738368 bit	2.7 V				30	260	MLC NAND TYPE		18.4 mm			3.3
MT29F8G08ABABAWP:B	Micron Technology	FLASH	INDUSTRIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	512K	50 mA	1073741824 words	3.3	NO	3/3.3	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP48,.8,20		Flash Memories	10	.5 mm	85 Cel	3-STATE	1GX8	1G	-40 Cel	2K	YES		YES	DUAL			R-PDSO-G48		3.6 V	1.2 mm	100000 Write/Erase Cycles		12 mm	Not Qualified				8589934592 bit	2.7 V		4K				SLC NAND TYPE	.00005 Amp	18.4 mm				NO
NAND01GW3B2BN6E	STMicroelectronics	FLASH	INDUSTRIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	128K	20 mA	134217728 words	3	NO	3/3.3	8	SMALL OUTLINE, THIN PROFILE	TSSOP48,.8,20		Flash Memories		.5 mm	85 Cel		128MX8	128M	-40 Cel	1K	YES	TIN/TIN BISMUTH	YES	DUAL			R-PDSO-G48		3.6 V	1.2 mm			12 mm	Not Qualified				1073741824 bit	2.7 V		2K	e3/e6	NOT SPECIFIED	260		.00005 Amp	18.4 mm		25000 ns	3	NO
S29GL512N10TFI01	Spansion	FLASH	INDUSTRIAL	56	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS			33554432 words	3			16	SMALL OUTLINE, THIN PROFILE		8			.5 mm	85 Cel		32MX16	32M	-40 Cel			MATTE TIN		DUAL			R-PDSO-G56	3	3.6 V	1.2 mm			14 mm	Not Qualified			BOTTOM/TOP	536870912 bit	2.7 V			e3			NOR TYPE		18.4 mm		100 ns	3
AM29DL800BB90EI	Spansion	FLASH	INDUSTRIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	45 mA	524288 words	3	YES	3/3.3	16	SMALL OUTLINE, THIN PROFILE	TSSOP48,.8,20	8	Flash Memories		.5 mm	85 Cel		512KX16	512K	-40 Cel	2,4,2,14	YES	TIN LEAD	YES	DUAL			R-PDSO-G48	3	3.6 V	1.2 mm			12 mm	Not Qualified			BOTTOM	8388608 bit	2.7 V	BOTTOM BOOT BLOCK		e0		260	NOR TYPE	.000005 Amp	18.4 mm		90 ns	3	YES
AM29F010B-55EF	Intel	FLASH		32	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	16K	40 mA	131072 words	5	YES		8	SMALL OUTLINE, THIN PROFILE	TSSOP32,.8,20			20	.5 mm	85 Cel	3-STATE	128KX8	128K	-40 Cel	8	YES			DUAL			R-PDSO-G32		5.5 V	1.2 mm	1000000 Write/Erase Cycles		8 mm		.000055 ms			1048576 bit	4.5 V						NOR TYPE	.000005 Amp	18.4 mm		55 ns	5	YES
AM29LV065DU120REI	Spansion	FLASH	INDUSTRIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	64K	30 mA	8388608 words	3.3	YES	3.3,3/5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP48,.8,20		Flash Memories		.5 mm	85 Cel		8MX8	8M	-40 Cel	128	YES	TIN LEAD	YES	DUAL			R-PDSO-G48	3	3.6 V	1.2 mm			12 mm	Not Qualified				67108864 bit	3 V			e0		260	NOR TYPE	.000005 Amp	18.4 mm	YES	120 ns	3	YES
AT29C020-70TU	Atmel	FLASH	INDUSTRIAL	32	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	256	40 mA	262144 words	5	YES	5	8	SMALL OUTLINE, THIN PROFILE	TSSOP32,.8,20		Flash Memories		.5 mm	85 Cel		256KX8	256K	-40 Cel	1K	NO	MATTE TIN		DUAL			R-PDSO-G32	3	5.5 V	1.2 mm			8 mm	Not Qualified	10 ms		BOTTOM/TOP	2097152 bit	4.5 V			e3		260	NOR TYPE	.0003 Amp	18.4 mm		70 ns	5	YES
AT29C040A-10TC	Atmel	FLASH	COMMERCIAL	32	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	256	40 mA	524288 words	5	YES	5	8	SMALL OUTLINE, THIN PROFILE	TSSOP32,.8,20		Flash Memories		.5 mm	70 Cel		512KX8	512K	0 Cel	2K	NO	TIN LEAD		DUAL			R-PDSO-G32	3	5.5 V	1.2 mm			8 mm	Not Qualified	10 ms		BOTTOM/TOP	4194304 bit	4.5 V		256	e0		240	NOR TYPE	.0001 Amp	18.4 mm		100 ns	5	YES
AT29LV512-12TU	Atmel	FLASH	INDUSTRIAL	32	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	128	15 mA	65536 words	3.3	YES	3.3	8	SMALL OUTLINE, THIN PROFILE	TSSOP32,.8,20		Flash Memories		.5 mm	85 Cel		64KX8	64K	-40 Cel	512	NO	MATTE TIN		DUAL			R-PDSO-G32	3	3.6 V	1.2 mm	10000 Write/Erase Cycles		8 mm	Not Qualified	20 ms			524288 bit	3 V		128	e3		260	NOR TYPE	.00005 Amp	18.4 mm		120 ns	3	YES
AT45DB321C-TC	Atmel	FLASH	COMMERCIAL	28	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		50 mA	33554432 words	3		3/3.3	1	SMALL OUTLINE, THIN PROFILE	TSSOP28,.53,22		Flash Memories		.55 mm	70 Cel		32MX1	32M	0 Cel			TIN LEAD		DUAL		HARDWARE	R-PDSO-G28	3	3.6 V	1.2 mm		40 MHz	8 mm	Not Qualified		SPI		33554432 bit	2.7 V	ORGANISED AS 8192 PAGES OF 528 BYTES EACH		e0			NOR TYPE	.000015 Amp	11.8 mm			2.7
AT49BV020-12TC	Atmel	FLASH	COMMERCIAL	32	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	8K,248K	50 mA	262144 words	3	YES	3/3.3	8	SMALL OUTLINE, THIN PROFILE	TSSOP32,.8,20		Flash Memories		.5 mm	70 Cel		256KX8	256K	0 Cel	1,1	YES	TIN LEAD		DUAL			R-PDSO-G32	3	3.6 V	1.2 mm			8 mm	Not Qualified			BOTTOM	2097152 bit	2.7 V			e0		240	NOR TYPE	.00005 Amp	18.4 mm		120 ns	2.7	YES
AT49BV1614-90TI	Atmel	FLASH	INDUSTRIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	8K,32K,64K	50 mA	1048576 words	3	YES	3	16	SMALL OUTLINE, THIN PROFILE	TSSOP48,.8,20	8	Flash Memories		.5 mm	85 Cel		1MX16	1M	-40 Cel	8,2,30	YES	TIN LEAD	YES	DUAL			R-PDSO-G48		3.6 V	1.2 mm			12 mm	Not Qualified			BOTTOM	16777216 bit	2.7 V			e0			NOR TYPE	.00001 Amp	18.4 mm		90 ns	3	YES
AT49BV322AT-70TI	Atmel	FLASH	INDUSTRIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	8K,64K	45 mA	2097152 words	2.7	YES	3/3.3	16	SMALL OUTLINE, THIN PROFILE	TSSOP48,.8,20	8	Flash Memories		.5 mm	85 Cel		2MX16	2M	-40 Cel	8,63	YES	Tin/Lead (Sn/Pb)	YES	DUAL			R-PDSO-G48	3	3.6 V	1.2 mm			12 mm	Not Qualified			TOP	33554432 bit	2.65 V	TOP/BOTTOM BOOT BLOCK		e0	30	240	NOR TYPE	.000025 Amp	18.4 mm	YES	70 ns	3	YES
AT49F040-12TI	Atmel	FLASH	INDUSTRIAL	32	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	16K,496K	90 mA	524288 words	5	YES	5	8	SMALL OUTLINE, THIN PROFILE	TSSOP32,.8,20		Flash Memories		.5 mm	85 Cel	3-STATE	512KX8	512K	-40 Cel	1,1	YES	TIN LEAD		DUAL			R-PDSO-G32	3	5.5 V	1.2 mm			8 mm	Not Qualified			BOTTOM	4194304 bit	4.5 V	BYTE PROGRAMMABLE; HARDWARE DATA PROTECTION; 10000 WRITE CYCLES		e0		240	NOR TYPE	.0003 Amp	18.4 mm		120 ns	5	YES
AT49LV1614-90TC	Atmel	FLASH	COMMERCIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	8K,32K,64K	50 mA	1048576 words	3.3	YES	3.3	16	SMALL OUTLINE, THIN PROFILE	TSSOP48,.8,20	8	Flash Memories		.5 mm	70 Cel		1MX16	1M	0 Cel	8,2,30	YES	TIN LEAD	YES	DUAL			R-PDSO-G48		3.6 V	1.2 mm			12 mm	Not Qualified			BOTTOM	16777216 bit	3 V			e0			NOR TYPE	.00001 Amp	18.4 mm		90 ns	3	YES
E28F002BC-T80	Intel	FLASH	COMMERCIAL	40	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	MOS		GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,96K,128K	60 mA	262144 words	5	NO	5	8	SMALL OUTLINE, THIN PROFILE	TSSOP40,.8,20		Flash Memories		.5 mm	70 Cel	3-STATE	256KX8	256K	0 Cel	1,2,1,1	YES	TIN LEAD		DUAL			R-PDSO-G40		5.5 V	1.2 mm	100000 Write/Erase Cycles		10 mm	Not Qualified			TOP	2097152 bit	4.5 V	TOP BOOT BLOCK		e0			NOR TYPE	.000008 Amp	18.4 mm		80 ns	12	NO
JS28F160C3BD70	Intel	FLASH	INDUSTRIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	4K,32K	55 mA	1048576 words	3	NO	1.8/3.3,3/3.3	16	SMALL OUTLINE, THIN PROFILE	TSSOP48,.8,20		Flash Memories		.5 mm	85 Cel		1MX16	1M	-40 Cel	8,31	YES	MATTE TIN		DUAL			R-PDSO-G48		3.6 V	1.2 mm			12 mm	Not Qualified			BOTTOM	16777216 bit	2.7 V	USER-SELECTABLE 3V OR 12V VPP		e3			NOR TYPE	.000005 Amp	18.4 mm	YES	70 ns	3	NO
K9WBG08U1M-PIB00	Samsung	FLASH	INDUSTRIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	256K	35 mA	4294967296 words	3.3	NO	3.3	8	SMALL OUTLINE	TSSOP48,.8,20		Flash Memories		.5 mm	85 Cel		4GX8	4G	-40 Cel	16K	YES		YES	DUAL			R-PDSO-G48	3	3.6 V	1.2 mm			12 mm	Not Qualified				34359738368 bit	2.7 V		4K			260		.0001 Amp	18.4 mm		20 ns	3	NO
LH28F160S5HT-TW	Sharp Corporation	FLASH	INDUSTRIAL	56	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS			1048576 words	5			16	SMALL OUTLINE, THIN PROFILE		8			.5 mm	85 Cel		1MX16	1M	-40 Cel			Tin/Bismuth (Sn/Bi)		DUAL			R-PDSO-G56	3	5.5 V	1.19 mm			14 mm	Not Qualified				16777216 bit	4.5 V			e6	10	250	NOR TYPE		18.4 mm		90 ns	5
M29F200FB5AN6E2	Micron Technology	FLASH	INDUSTRIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	30 mA	131072 words	5	YES	5	16	SMALL OUTLINE, THIN PROFILE	TSSOP48,.8,20	8	Flash Memories		.5 mm	85 Cel		128KX16	128K	-40 Cel	1,2,1,3	YES	MATTE TIN	YES	DUAL			R-PDSO-G48		5.5 V	1.2 mm			12 mm	Not Qualified			BOTTOM	2097152 bit	4.5 V	BOTTOM BOOT BLOCK		e3			NOR TYPE	.00012 Amp	18.4 mm	YES	55 ns	5	YES
M29F400FT5AN6E2	Micron Technology	FLASH	INDUSTRIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	30 mA	262144 words	5	YES	5	16	SMALL OUTLINE, THIN PROFILE	TSSOP48,.8,20	8	Flash Memories		.5 mm	85 Cel		256KX16	256K	-40 Cel	1,2,1,7	YES	MATTE TIN	YES	DUAL			R-PDSO-G48		5.5 V	1.2 mm			12 mm	Not Qualified			TOP	4194304 bit	4.5 V	TOP BOOT BLOCK		e3			NOR TYPE	.00012 Amp	18.4 mm	YES	55 ns	5	YES
M29W128FL70N6E	STMicroelectronics	FLASH	INDUSTRIAL	56	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	64K	20 mA	8388608 words	3	YES	3/3.3	16	SMALL OUTLINE, THIN PROFILE	TSSOP56,.8,20	8	Flash Memories		.5 mm	85 Cel		8MX16	8M	-40 Cel	256	YES	MATTE TIN/TIN BISMUTH	YES	DUAL			R-PDSO-G56		3.6 V	1.2 mm			14 mm	Not Qualified				134217728 bit	2.7 V	100,000 PROGRAM/ERASE CYCLES	8/16	e3/e6	40	260	NOR TYPE	.0001 Amp	18.4 mm	YES	70 ns	3	YES
M29W400BB90N6	STMicroelectronics	FLASH	INDUSTRIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	20 mA	262144 words	3.3	YES	3/3.3	16	SMALL OUTLINE, THIN PROFILE	TSSOP48,.8,20	8	Flash Memories		.5 mm	85 Cel		256KX16	256K	-40 Cel	1,2,1,7	YES	TIN LEAD	YES	DUAL			R-PDSO-G48		3.6 V	1.2 mm	100000 Write/Erase Cycles		12 mm	Not Qualified			BOTTOM	4194304 bit	2.7 V	BOTTOM BOOT BLOCK		e0			NOR TYPE	.0001 Amp	18.4 mm		90 ns	2.7	YES
MBM29DL400TC-90PFTN	Spansion	FLASH	INDUSTRIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	45 mA	262144 words	3	YES	3/3.3	16	SMALL OUTLINE, THIN PROFILE	TSSOP48,.8,20	8	Flash Memories		.5 mm	85 Cel		256KX16	256K	-40 Cel	2,4,2,6	YES	TIN LEAD	YES	DUAL			R-PDSO-G48	3	3.6 V	1.2 mm			12 mm	Not Qualified			TOP	4194304 bit	2.7 V			e0		260	NOR TYPE	.000005 Amp	18.4 mm		90 ns	3	YES
MBM29F033C-70PTN	Spansion	FLASH	COMMERCIAL	40	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	64K	45 mA	4194304 words	5	YES	5	8	SMALL OUTLINE, THIN PROFILE	TSSOP40,.8,20		Flash Memories		.5 mm	70 Cel		4MX8	4M	-20 Cel	64	YES	TIN LEAD	YES	DUAL			R-PDSO-G40		5.25 V	1.2 mm			10 mm	Not Qualified				33554432 bit	4.75 V			e0			NOR TYPE	.000005 Amp	18.4 mm		70 ns	5	YES
MBM29LV160BE70TN	Fujitsu	FLASH	INDUSTRIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	35 mA	1048576 words	3	YES	3/3.3	16	SMALL OUTLINE, THIN PROFILE	TSSOP48,.8,20	8	Flash Memories		.5 mm	85 Cel		1MX16	1M	-40 Cel	1,2,1,31	YES	Tin/Lead (Sn/Pb)	YES	DUAL			R-PDSO-G48		3.6 V	1.2 mm			12 mm	Not Qualified			BOTTOM	16777216 bit	2.7 V			e0			NOR TYPE	.000005 Amp	18.4 mm	YES	70 ns	3	YES
MBM29LV160BE-70TN	Spansion	FLASH	INDUSTRIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	35 mA	1048576 words	3	YES	3/3.3	16	SMALL OUTLINE, THIN PROFILE	TSSOP48,.8,20	8	Flash Memories		.5 mm	85 Cel		1MX16	1M	-40 Cel	1,2,1,31	YES	TIN LEAD	YES	DUAL			R-PDSO-G48		3.6 V	1.1 mm			12 mm	Not Qualified			BOTTOM	16777216 bit	2.7 V			e0			NOR TYPE	.000005 Amp	18.4 mm	YES	70 ns	3	YES
MBM29LV800B-12PFTN	Fujitsu	FLASH	COMMERCIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	35 mA	1048576 words	3	YES	3/3.3	8	SMALL OUTLINE, THIN PROFILE	TSSOP48,.8,20	8	Flash Memories		.5 mm	70 Cel		1MX8	1M	0 Cel	1,2,1,15	YES	TIN LEAD	YES	DUAL			R-PDSO-G48		3.6 V	1.2 mm	100000 Write/Erase Cycles		12 mm	Not Qualified			BOTTOM	8388608 bit	2.7 V	CAN ALSO BE CONFIGURABLE AS 512K X 16 ;100K PROGRAM/ERASE CYCLE MIN		e0			NOR TYPE	.000005 Amp	18.4 mm		120 ns	3	YES
MBM29PL160BD-75PFTN	Spansion	FLASH	COMMERCIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,224K,256K	70 mA	1048576 words	3	YES	3/3.3	16	SMALL OUTLINE, THIN PROFILE	TSSOP48,.8,20	8	Flash Memories		.5 mm	70 Cel		1MX16	1M	-20 Cel	1,2,1,7	YES	TIN LEAD		DUAL			R-PDSO-G48		3.6 V	1.2 mm			12 mm	Not Qualified			BOTTOM	16777216 bit	2.7 V	ALSO CONFIGURABLE AS 2M X 8	8/16	e0			NOR TYPE	.000005 Amp	18.4 mm	YES	75 ns	3	YES
MT28F016S5VG-9	Micron Technology	FLASH	COMMERCIAL	40	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	64K	50 mA	2097152 words	5	NO	5	8	SMALL OUTLINE, THIN PROFILE	TSSOP40,.8,20		Flash Memories		.5 mm	70 Cel		2MX8	2M	0 Cel	32	YES	TIN LEAD	YES	DUAL			R-PDSO-G40		5.5 V	1.2 mm			10 mm	Not Qualified				16777216 bit	4.5 V	DEEP POWER DOWN; USER CONFIGURABLE 5V OR 12V VPP		e0			NOR TYPE	.00001 Amp	18.4 mm		90 ns	5	NO
MT29F1G08AACWPET:C	Micron Technology	FLASH	INDUSTRIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS			134217728 words	3.3			8	SMALL OUTLINE, THIN PROFILE					.5 mm	85 Cel		128MX8	128M	-40 Cel			TIN		DUAL			R-PDSO-G48		3.6 V	1.2 mm			12 mm					1073741824 bit	2.7 V			e3			SLC NAND TYPE		18.4 mm			3.3
NAND02GW3B2CN6E	STMicroelectronics	FLASH	INDUSTRIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	128K	20 mA	268435456 words	3	NO	3/3.3	8	SMALL OUTLINE, THIN PROFILE	TSSOP48,.8,20		Flash Memories		.5 mm	85 Cel		256MX8	256M	-40 Cel	2K	YES	TIN/TIN BISMUTH	YES	DUAL			R-PDSO-G48		3.6 V	1.2 mm			12 mm	Not Qualified				2147483648 bit	2.7 V		2K	e3/e6	NOT SPECIFIED	260		.00005 Amp	18.4 mm		25000 ns	3	NO
NAND128W3A2BN6F	STMicroelectronics	FLASH	INDUSTRIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	16K	20 mA	16777216 words	3	NO	3/3.3	8	SMALL OUTLINE, THIN PROFILE	TSSOP48,.8,20		Flash Memories		.5 mm	85 Cel		16MX8	16M	-40 Cel	1K	YES	TIN/TIN BISMUTH	YES	DUAL			R-PDSO-G48		3.6 V	1.2 mm			12 mm	Not Qualified				134217728 bit	2.7 V		512	e3/e6	NOT SPECIFIED	260	SLC NAND TYPE	.00005 Amp	18.4 mm		12000 ns	3	NO
S34ML02G100TFB000	Cypress Semiconductor	FLASH	INDUSTRIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	PARALLEL	ASYNCHRONOUS			268435456 words	3.3			8	SMALL OUTLINE, THIN PROFILE					.5 mm	105 Cel		256MX8	256M	-40 Cel			MATTE TIN		DUAL			R-PDSO-G48	3	3.6 V	1.2 mm			12 mm					2147483648 bit	2.7 V			e3		260	SLC NAND TYPE		18.4 mm			3
S34ML04G200TFI003	Cypress Semiconductor	FLASH	INDUSTRIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	128K	30 mA	536870912 words	3.3	NO	3/3.3	8	SMALL OUTLINE, THIN PROFILE	TSSOP48,.8,20		Flash Memories		.5 mm	85 Cel		512MX8	512M	-40 Cel	4K	YES	MATTE TIN	YES	DUAL			R-PDSO-G48	3	3.6 V	1.2 mm			12 mm	Not Qualified				4294967296 bit	2.7 V		2K	e3		260	SLC NAND TYPE	.00005 Amp	18.4 mm		25 ns	3	NO
TE28F160S5-70	Intel	FLASH	INDUSTRIAL	56	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	64K	80 mA	2097152 words	5	NO	5	8	SMALL OUTLINE, THIN PROFILE	TSSOP56,.8,20	8	Flash Memories		.5 mm	85 Cel		2MX8	2M	-40 Cel	32	YES		YES	DUAL			R-PDSO-G56		5.25 V	1.2 mm			14 mm	Not Qualified				16777216 bit	4.75 V	CONFIGURABLE AS 1M X 16	16/32	e0	NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.00002 Amp	18.4 mm	YES	70 ns	5	NO
TE28F200B5T80	Intel	FLASH	INDUSTRIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,96K,128K	70 mA	262144 words	5	NO	5	8	SMALL OUTLINE, THIN PROFILE	TSSOP48,.8,20	8	Flash Memories		.5 mm	85 Cel		256KX8	256K	-40 Cel	1,2,1,1	YES	TIN LEAD		DUAL			R-PDSO-G48		5.5 V	1.2 mm			12 mm	Not Qualified			TOP	2097152 bit	4.5 V	CONFG AS 128K X 16; USER SELECTABLE AS 5V OR 12V VPP; TOP BOOT BLOCK		e0			NOR TYPE	.000008 Amp	18.4 mm		80 ns	5	NO
TE28F320C3BD70	Intel	FLASH	INDUSTRIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	4K,32K	55 mA	2097152 words	3	NO	1.8/3.3,3/3.3	16	SMALL OUTLINE, THIN PROFILE	TSSOP48,.8,20		Flash Memories		.5 mm	85 Cel		2MX16	2M	-40 Cel	8,63	YES	TIN LEAD		DUAL			R-PDSO-G48		3.6 V	1.2 mm			12 mm	Not Qualified			BOTTOM	33554432 bit	2.7 V	USER-SELECTABLE 3V OR 12V VPP; BOTTOM BOOT BLOCK		e0			NOR TYPE	.000005 Amp	18.4 mm	YES	70 ns	3	NO
SST39VF3201-70-4I-EKE	Microchip Technology	FLASH	INDUSTRIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	2K	35 mA	2097152 words	3	YES	3/3.3	16	SMALL OUTLINE, THIN PROFILE	TSSOP48,.8,20		Flash Memories	100	.5 mm	85 Cel	3-STATE	2MX16	2M	-40 Cel	1K	YES	Matte Tin (Sn) - annealed		DUAL	1		R-PDSO-G48	3	3.6 V	1.2 mm	100000 Write/Erase Cycles		12 mm	Not Qualified			BOTTOM	33554432 bit	2.7 V	BOTTOM BOOT BLOCK		e3	40	260	NOR TYPE	.00002 Amp	18.4 mm	YES	70 ns	3	YES

Flash Memory

Flash memory is a type of non-volatile computer memory that is commonly used in digital devices such as USB drives, solid-state drives, and digital cameras. It is a type of EEPROM (Electrically Erasable Programmable Read-Only Memory) that allows data to be erased and reprogrammed in blocks instead of one byte at a time. Flash memory uses a floating gate transistor to store data, which allows it to retain information even when the power is turned off.

Flash memory is widely used in digital devices because of its high capacity, small size, and fast access times. It is also more durable than other types of memory, such as hard disk drives, because it has no moving parts. This makes it ideal for use in portable devices that may be subject to physical shock or vibration.

There are two types of flash memory: NOR flash and NAND flash. NOR flash is faster than NAND flash, but it has lower density and higher cost per bit. NOR flash is typically used for code storage, such as firmware or boot code, because it provides faster access times. NAND flash has higher density and lower cost per bit, which makes it ideal for data storage applications.

Flash memory has a limited lifespan, as it can only be erased and reprogrammed a limited number of times. This is because the process of erasing and reprogramming the memory causes wear and tear on the floating gate transistor. However, modern flash memory devices have a sophisticated wear-leveling algorithm that distributes writes evenly across the memory, which extends the lifespan of the device.