TSOP1 Flash Memory 2,400+

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Terminal Form	Parallel or Serial	Operating Mode	Sector Size (Words)	Maximum Supply Current	No. of Words	Nominal Supply Voltage / Vsup (V)	Toggle Bit	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Alternate Memory Width	Sub-Category	Minimum Data Retention Time	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	No. of Sectors/Size	Command User Interface	Terminal Finish	Ready or Busy	Terminal Position	No. of Ports	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Endurance	Width	Qualification	Boot Block	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Type	Maximum Standby Current	Length	Common Flash Interface	Maximum Access Time	Programming Voltage (V)	Data Polling
SST39VF3202-70-4I-EKE	Microchip Technology	FLASH	INDUSTRIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	2K	35 mA	2097152 words	3	YES	3/3.3	16	SMALL OUTLINE, THIN PROFILE	TSSOP48,.8,20		Flash Memories	100	.5 mm	85 Cel	3-STATE	2MX16	2M	-40 Cel	1K	YES	MATTE TIN		DUAL	1	R-PDSO-G48		3.6 V	1.2 mm	100000 Write/Erase Cycles	12 mm	Not Qualified	TOP	33554432 bit	2.7 V	TOP BOOT BLOCK	e3			NOR TYPE	.00002 Amp	18.4 mm	YES	70 ns	3	YES
SST39VF040-70-4C-WHE-T	Microchip Technology	FLASH	COMMERCIAL	32	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	4K	30 mA	524288 words	3	YES	3/3.3	8	SMALL OUTLINE, THIN PROFILE	TSSOP32,.56,20		Flash Memories	100	.5 mm	70 Cel	3-STATE	512KX8	512K	0 Cel	128	YES	MATTE TIN		DUAL	1	R-PDSO-G32	3	3.6 V	1.2 mm	100000 Write/Erase Cycles	8 mm	Not Qualified		4194304 bit	2.7 V		e3	40	260	NOR TYPE	.000015 Amp	12.4 mm		70 ns	3	YES
SST39VF3201-70-4I-EKE-T	Microchip Technology	FLASH	INDUSTRIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	2K	35 mA	2097152 words	3	YES	3/3.3	16	SMALL OUTLINE, THIN PROFILE	TSSOP48,.8,20		Flash Memories	100	.5 mm	85 Cel	3-STATE	2MX16	2M	-40 Cel	1K	YES	MATTE TIN		DUAL	1	R-PDSO-G48		3.6 V	1.2 mm	100000 Write/Erase Cycles	12 mm	Not Qualified	BOTTOM	33554432 bit	2.7 V	BOTTOM BOOT BLOCK	e3			NOR TYPE	.00002 Amp	18.4 mm	YES	70 ns	3	YES
SST39VF3201B-70-4I-EKE	Microchip Technology	FLASH	INDUSTRIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	2K	45 mA	2097152 words	3	YES	3/3.3	16	SMALL OUTLINE, THIN PROFILE	TSSOP48,.71,20		Flash Memories		.5 mm	85 Cel	3-STATE	2MX16	2M	-40 Cel	1K	YES	Matte Tin (Sn) - annealed		DUAL	1	R-PDSO-G48	3	3.6 V	1.2 mm	10000 Write/Erase Cycles	12 mm	Not Qualified	BOTTOM	33554432 bit	2.7 V	BOTTOM BOOT BLOCK	e3	40	260	NOR TYPE	.00002 Amp	18.4 mm	YES	70 ns	3	YES
SST39VF800A-70-4C-EKE	Microchip Technology	FLASH	COMMERCIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	2K	30 mA	524288 words	3	YES	3/3.3	16	SMALL OUTLINE, THIN PROFILE	TSSOP48,.8,20		Flash Memories	100	.5 mm	70 Cel	3-STATE	512KX16	512K	0 Cel	256	YES	MATTE TIN		DUAL	1	R-PDSO-G48	3	3.6 V	1.2 mm	100000 Write/Erase Cycles	12 mm	Not Qualified		8388608 bit	2.7 V		e3	40	260	NOR TYPE	.00002 Amp	18.4 mm	YES	70 ns	3	YES
SST39VF800A-70-4I-EKE	Microchip Technology	FLASH	INDUSTRIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	2K	30 mA	524288 words	3	YES	3/3.3	16	SMALL OUTLINE, THIN PROFILE	TSSOP48,.8,20		Flash Memories	100	.5 mm	85 Cel	3-STATE	512KX16	512K	-40 Cel	256	YES	MATTE TIN		DUAL	1	R-PDSO-G48		3.6 V	1.2 mm	100000 Write/Erase Cycles	12 mm	Not Qualified		8388608 bit	2.7 V		e3			NOR TYPE	.00002 Amp	18.4 mm	YES	70 ns	3	YES
TMS28F800ZT80BDCDL	Texas Instruments	FLASH	COMMERCIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS			1048576 words	5			8	SMALL OUTLINE, THIN PROFILE					.5 mm	70 Cel		1MX8	1M	0 Cel					DUAL		R-PDSO-G48		5.5 V	1.2 mm		12 mm	Not Qualified	TOP	8388608 bit	4.5 V	CONFG AS 512K X 16; TOP BOOT BLOCK				NOR TYPE		18.4 mm		80 ns	3
TMS28F008LB12CDCDL	Texas Instruments	FLASH	COMMERCIAL	40	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS			1048576 words	3.3			8	SMALL OUTLINE, THIN PROFILE					.5 mm	70 Cel		1MX8	1M	0 Cel					DUAL		R-PDSO-G40		3.6 V	1.2 mm		10 mm	Not Qualified	BOTTOM	8388608 bit	3 V	BOTTOM BOOT BLOCK				NOR TYPE		18.4 mm		120 ns	3
TMS28F004AFT80BDCDL	Texas Instruments	FLASH	COMMERCIAL	40	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,96K,128K	65 mA	524288 words	5	NO	5	8	SMALL OUTLINE, THIN PROFILE	TSSOP40,.8,20		Flash Memories		.5 mm	70 Cel	3-STATE	512KX8	512K	0 Cel	1,2,1,3	YES			DUAL		R-PDSO-G40		5.5 V	1.2 mm	10000 Write/Erase Cycles	10 mm	Not Qualified	TOP	4194304 bit	4.5 V	USER-SELECTABLE 5V OR 12 V VPP; TOP BOOT BLOCK		NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.000008 Amp	18.4 mm		80 ns	5	NO
TMS29LF040-60C5DDE4	Texas Instruments	FLASH	INDUSTRIAL	32	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	MOS	GULL WING	PARALLEL	ASYNCHRONOUS	64K	60 mA	524288 words	3.3	YES	3.3	8	SMALL OUTLINE, THIN PROFILE	TSSOP32,.8,20		Flash Memories		.5 mm	85 Cel	3-STATE	512KX8	512K	-40 Cel	8	YES			DUAL		R-PDSO-G32		3.6 V	1.2 mm	100000 Write/Erase Cycles	8 mm	Not Qualified		4194304 bit	3 V			NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.0001 Amp	18.415 mm		60 ns	3	YES
TMS28F002AFB60BDCDL	Texas Instruments	FLASH	COMMERCIAL	40	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	MOS	GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,96K,128K	65 mA	262144 words	5	NO	5	8	SMALL OUTLINE, THIN PROFILE	TSSOP40,.8,20		Flash Memories		.5 mm	70 Cel	3-STATE	256KX8	256K	0 Cel	1,2,1,1	YES			DUAL		R-PDSO-G40		5.5 V	1.2 mm	10000 Write/Erase Cycles	10 mm	Not Qualified	BOTTOM	2097152 bit	4.5 V	10000 PROGRAM/ERASE CYCLES; BOTTOM BOOT BLOCK		NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.000008 Amp	18.4 mm		60 ns	5	NO
TMS28F800SZT-70BDCDQ	Texas Instruments	FLASH	AUTOMOTIVE	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS			1048576 words	5			8	SMALL OUTLINE, THIN PROFILE					.5 mm	125 Cel		1MX8	1M	-40 Cel					DUAL		R-PDSO-G48		5.5 V	1.2 mm		12 mm	Not Qualified	TOP	8388608 bit	4.5 V	10000 PROGRAM/ERASE CYCLES; TTL COMPATIBLE I/O; TOP BOOT BLOCK				NOR TYPE		18.4 mm		70 ns	3
TMS29LF400T-120CDCDQ	Texas Instruments	FLASH	AUTOMOTIVE	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS			524288 words	3.3			8	SMALL OUTLINE, THIN PROFILE					.5 mm	125 Cel	3-STATE	512KX8	512K	-40 Cel					DUAL		R-PDSO-G48		3.6 V	1.2 mm		12 mm	Not Qualified		4194304 bit	2.7 V	CAN ALSO BE CONFIGURED AS 256K X 16				NOR TYPE		18.4 mm		120 ns	3
TMS28F010A-12C3DDL	Texas Instruments	FLASH	COMMERCIAL	32	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	MOS	GULL WING	PARALLEL	ASYNCHRONOUS		30 mA	131072 words	5	NO	5	8	SMALL OUTLINE, THIN PROFILE	TSSOP32,.8,20		Flash Memories		.5 mm	70 Cel	3-STATE	128KX8	128K	0 Cel		YES			DUAL		R-PDSO-G32		5.5 V	1.2 mm	1000 Write/Erase Cycles	8 mm	Not Qualified		1048576 bit	4.5 V	1000 PROGRAM/ERASE CYCLES		NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.0001 Amp	18.415 mm		120 ns	12	NO
TMS28F200BZT-6BDBRE	Texas Instruments	FLASH	INDUSTRIAL	56	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,96K,128K	65 mA	262144 words	5	NO	5	8	SMALL OUTLINE, THIN PROFILE	TSSOP56,.8,20	16	Flash Memories		.5 mm	85 Cel	3-STATE	256KX8	256K	-40 Cel	1,2,1,1	YES			DUAL		R-PDSO-G56		5.25 V	1.2 mm	10000 Write/Erase Cycles	14 mm	Not Qualified	TOP	2097152 bit	4.75 V	DEEP POWER-DOWN				NOR TYPE	.0000012 Amp	18.4 mm		60 ns	12	NO
TMS28F200AFB70BDCDQ	Texas Instruments	FLASH	AUTOMOTIVE	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS			131072 words	5			16	SMALL OUTLINE, THIN PROFILE		8			.5 mm	125 Cel		128KX16	128K	-40 Cel					DUAL		R-PDSO-G48		5.5 V	1.2 mm		12 mm	Not Qualified	BOTTOM	2097152 bit	4.5 V	CAN BE PROGRAMMED AT 12V VPP; BOTTOM BOOT BLOCK				NOR TYPE		18.4 mm		70 ns	5
TMS28F010-15C3DDQ4	Texas Instruments	FLASH	AUTOMOTIVE	32	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		30 mA	131072 words	5	NO	5	8	SMALL OUTLINE, THIN PROFILE	TSSOP32,.8,20		Flash Memories		.5 mm	125 Cel		128KX8	128K	-40 Cel		YES			DUAL		R-PDSO-G32		5.5 V	1.2 mm	1000 Write/Erase Cycles	8 mm	Not Qualified		1048576 bit	4.5 V	BULK ERASE		NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.0001 Amp	18.415 mm		150 ns	12	NO
TMS28F200AFT80BDCDE	Texas Instruments	FLASH	INDUSTRIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	MOS	GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,96K,128K	65 mA	262144 words	5	NO	5	8	SMALL OUTLINE, THIN PROFILE	TSSOP48,.8,20	8	Flash Memories		.5 mm	85 Cel	3-STATE	256KX8	256K	-40 Cel	1,2,1,1	YES			DUAL		R-PDSO-G48		5.5 V	1.2 mm	10000 Write/Erase Cycles	12 mm	Not Qualified	TOP	2097152 bit	4.5 V	10000 PROGRAM/ERASE CYCLES; CONFG AS 128K X 16; TOP BOOT BLOCK		NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.000008 Amp	18.4 mm		80 ns	5	NO
TMS28F210-15C3DBWL	Texas Instruments	FLASH	COMMERCIAL	40	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		50 mA	65536 words	5	NO	5	16	SMALL OUTLINE, THIN PROFILE	TSSOP40,.56,20		Flash Memories		.5 mm	70 Cel	3-STATE	64KX16	64K	0 Cel		YES			DUAL		R-PDSO-G40		5.5 V	1.2 mm	1000 Write/Erase Cycles	10 mm	Not Qualified		1048576 bit	4.5 V			NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.0001 Amp	12.4 mm		150 ns	12	NO
TMS28F800ET80CDCDQ	Texas Instruments	FLASH	AUTOMOTIVE	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS			1048576 words	3			8	SMALL OUTLINE, THIN PROFILE					.5 mm	125 Cel		1MX8	1M	-40 Cel					DUAL		R-PDSO-G48		3.6 V	1.2 mm		12 mm	Not Qualified	TOP	8388608 bit	2.7 V	CONFG AS 512K X 16; USER SELECTABLE 5V VCC; TOP BOOT BLOCK				NOR TYPE		18.4 mm		120 ns	3
TMS28F400AFT70CDCDL	Texas Instruments	FLASH	COMMERCIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,96K,128K	65 mA	524288 words	5	NO	5	8	SMALL OUTLINE, THIN PROFILE	TSSOP48,.8,20	8	Flash Memories		.5 mm	70 Cel	3-STATE	512KX8	512K	0 Cel	1,2,1,3	YES			DUAL		R-PDSO-G48		5.5 V	1.2 mm	100000 Write/Erase Cycles	12 mm	Not Qualified	TOP	4194304 bit	4.5 V	CAN BE CONFG AS 256K X 16; TOP BOOT BLOCK		NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.000005 Amp	18.4 mm		70 ns	5	NO
TMS29VF040-20C5DDL	Texas Instruments	FLASH	COMMERCIAL	32	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	MOS	GULL WING	PARALLEL	ASYNCHRONOUS	64K	60 mA	524288 words	3.3	YES	3	8	SMALL OUTLINE, THIN PROFILE	TSSOP32,.8,20		Flash Memories		.5 mm	70 Cel	3-STATE	512KX8	512K	0 Cel	8	YES			DUAL		R-PDSO-G32		3.6 V	1.2 mm	100000 Write/Erase Cycles	8 mm	Not Qualified		4194304 bit	2.7 V			NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.0001 Amp	18.415 mm		200 ns	3	YES
TMS28F008LT10BDCDL	Texas Instruments	FLASH	COMMERCIAL	40	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS			1048576 words	3.3			8	SMALL OUTLINE, THIN PROFILE					.5 mm	70 Cel		1MX8	1M	0 Cel					DUAL		R-PDSO-G40		3.6 V	1.2 mm		10 mm	Not Qualified	TOP	8388608 bit	3 V	TOP BOOT BLOCK				NOR TYPE		18.4 mm		100 ns	3
TMS28F008LT12CDCDQ	Texas Instruments	FLASH	AUTOMOTIVE	40	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS			1048576 words	3.3			8	SMALL OUTLINE, THIN PROFILE					.5 mm	125 Cel		1MX8	1M	-40 Cel					DUAL		R-PDSO-G40		3.6 V	1.2 mm		10 mm	Not Qualified	TOP	8388608 bit	3 V	TOP BOOT BLOCK				NOR TYPE		18.4 mm		120 ns	3
TMS28F400AMB60BDCDL	Texas Instruments	FLASH	COMMERCIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	MOS	GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,96K,128K	65 mA	262144 words	3.3	NO	3.3/5	16	SMALL OUTLINE, THIN PROFILE	TSSOP48,.8,20	8	Flash Memories		.5 mm	70 Cel	3-STATE	256KX16	256K	0 Cel	1,2,1,3	YES			DUAL		R-PDSO-G48		3.6 V	1.2 mm	10000 Write/Erase Cycles	12 mm	Not Qualified	BOTTOM	4194304 bit	3 V	ALSO OPERATES AT 5V SUPPLY; BOTTOM BOOT BLOCK		NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.000005 Amp	18.4 mm		110 ns	12	NO
TMS28F200AET70CDCDE	Texas Instruments	FLASH	INDUSTRIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,96K,128K	65 mA	262144 words	3	NO	3/5	8	SMALL OUTLINE, THIN PROFILE	TSSOP48,.8,20	8	Flash Memories		.5 mm	85 Cel	3-STATE	256KX8	256K	-40 Cel	1,2,1,1	YES			DUAL		R-PDSO-G48		3.6 V	1.2 mm	100000 Write/Erase Cycles	12 mm	Not Qualified	TOP	2097152 bit	2.7 V	CAN BE CONFG AS 128K X 16; TOP BOOT BLOCK		NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.000008 Amp	18.4 mm		130 ns	5	NO
TMS29F008B-100BDCDE	Texas Instruments	FLASH	INDUSTRIAL	40	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	MOS	GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	60 mA	1048576 words	5	YES	5	8	SMALL OUTLINE, THIN PROFILE	TSSOP40,.8,20		Flash Memories		.5 mm	85 Cel	3-STATE	1MX8	1M	-40 Cel	1,2,1,15	YES		YES	DUAL		R-PDSO-G40		5.5 V	1.2 mm	10000 Write/Erase Cycles	10 mm	Not Qualified	BOTTOM	8388608 bit	4.5 V			NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.000005 Amp	18.4 mm		100 ns	5	YES
TMS28F002AST80BDCDL	Texas Instruments	FLASH	COMMERCIAL	40	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,96K,128K	65 mA	262144 words	3.3	NO	3.3/5	8	SMALL OUTLINE, THIN PROFILE	TSSOP40,.8,20		Flash Memories		.5 mm	70 Cel	3-STATE	256KX8	256K	0 Cel	1,2,1,1	YES			DUAL		R-PDSO-G40		3.6 V	1.2 mm	10000 Write/Erase Cycles	10 mm	Not Qualified	TOP	2097152 bit	3 V	USER-SELECTABLE 5V OR 12 V VPP; TOP BOOT BLOCK		NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.000008 Amp	18.4 mm		150 ns	5	NO
TMS28F004AFB80CDCDE	Texas Instruments	FLASH	INDUSTRIAL	40	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,96K,128K	65 mA	524288 words	5	NO	5	8	SMALL OUTLINE, THIN PROFILE	TSSOP40,.8,20		Flash Memories		.5 mm	85 Cel	3-STATE	512KX8	512K	-40 Cel	1,2,1,3	YES			DUAL		R-PDSO-G40		5.5 V	1.2 mm	100000 Write/Erase Cycles	10 mm	Not Qualified	BOTTOM	4194304 bit	4.5 V	USER-SELECTABLE 5V OR 12 V VPP; BOTTOM BOOT BLOCK		NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.000008 Amp	18.4 mm		80 ns	5	NO
TMS28F800ST80BDCDE	Texas Instruments	FLASH	INDUSTRIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS			1048576 words	3.3			8	SMALL OUTLINE, THIN PROFILE					.5 mm	85 Cel		1MX8	1M	-40 Cel					DUAL		R-PDSO-G48		3.6 V	1.2 mm		12 mm	Not Qualified	TOP	8388608 bit	3 V	CONFG AS 512K X 16; USER SELECTABLE 5V VCC; TOP BOOT BLOCK				NOR TYPE		18.4 mm		120 ns	3
TMS28F002AEB80BDCDL	Texas Instruments	FLASH	COMMERCIAL	40	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,96K,128K	65 mA	262144 words	3	NO	3/5	8	SMALL OUTLINE, THIN PROFILE	TSSOP40,.8,20		Flash Memories		.5 mm	70 Cel	3-STATE	256KX8	256K	0 Cel	1,2,1,1	YES			DUAL		R-PDSO-G40		3.6 V	1.2 mm	10000 Write/Erase Cycles	10 mm	Not Qualified	BOTTOM	2097152 bit	2.7 V	USER-SELECTABLE 5V OR 12 V VPP; BOTTOM BOOT BLOCK		NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.000008 Amp	18.4 mm		150 ns	5	NO
TMS28F800AVT-100BDCDE	Texas Instruments	FLASH	INDUSTRIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS			1048576 words	3			8	SMALL OUTLINE, THIN PROFILE					.5 mm	85 Cel		1MX8	1M	-40 Cel					DUAL		R-PDSO-G48		3.6 V	1.2 mm		12 mm	Not Qualified	TOP	8388608 bit	2.7 V	10000 PROGRAM/ERASE CYCLES; USER CONFG AS 512K X 16; TOP BOOT BLOCK				NOR TYPE		18.4 mm		100 ns	3
TMS28F002AFB80CDCDL	Texas Instruments	FLASH	COMMERCIAL	40	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	MOS	GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,96K,128K	65 mA	262144 words	5	NO	5	8	SMALL OUTLINE, THIN PROFILE	TSSOP40,.8,20		Flash Memories		.5 mm	70 Cel	3-STATE	256KX8	256K	0 Cel	1,2,1,1	YES			DUAL		R-PDSO-G40		5.5 V	1.2 mm	100000 Write/Erase Cycles	10 mm	Not Qualified	BOTTOM	2097152 bit	4.5 V	100000 PROGRAM/ERASE CYCLES; BOTTOM BOOT BLOCK		NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.000008 Amp	18.4 mm		80 ns	5	NO
TMS28F400BZT-90CDBRQ	Texas Instruments	FLASH	AUTOMOTIVE	56	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,96K,128K	65 mA	524288 words	5	NO	5	8	SMALL OUTLINE, THIN PROFILE	TSSOP56,.8,20	16	Flash Memories		.5 mm	125 Cel	3-STATE	512KX8	512K	-40 Cel	1,2,1,3	YES			DUAL		R-PDSO-G56		5.5 V	1.2 mm	100000 Write/Erase Cycles	14 mm	Not Qualified	TOP	4194304 bit	4.5 V	DEEP POWER-DOWN				NOR TYPE	.000008 Amp	18.4 mm		90 ns	12	NO
TMS28F002AFT80CDCDL	Texas Instruments	FLASH	COMMERCIAL	40	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	MOS	GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,96K,128K	65 mA	262144 words	5	NO	5	8	SMALL OUTLINE, THIN PROFILE	TSSOP40,.8,20		Flash Memories		.5 mm	70 Cel	3-STATE	256KX8	256K	0 Cel	1,2,1,1	YES			DUAL		R-PDSO-G40		5.5 V	1.2 mm	100000 Write/Erase Cycles	10 mm	Not Qualified	TOP	2097152 bit	4.5 V	100000 PROGRAM/ERASE CYCLES; TOP BOOT BLOCK		NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.000008 Amp	18.4 mm		80 ns	5	NO
TMS28F400AFB60CDCDE	Texas Instruments	FLASH	INDUSTRIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,96K,128K	65 mA	524288 words	5	NO	5	8	SMALL OUTLINE, THIN PROFILE	TSSOP48,.8,20	8	Flash Memories		.5 mm	85 Cel	3-STATE	512KX8	512K	-40 Cel	1,2,1,3	YES			DUAL		R-PDSO-G48		5.5 V	1.2 mm	100000 Write/Erase Cycles	12 mm	Not Qualified	BOTTOM	4194304 bit	4.5 V	CAN BE CONFG AS 256K X 16; BOTTOM BOOT BLOCK		NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.000008 Amp	18.4 mm		60 ns	5	NO
TMS28F002AET60BDCDE	Texas Instruments	FLASH	INDUSTRIAL	40	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,96K,128K	65 mA	262144 words	3	NO	3/5	8	SMALL OUTLINE, THIN PROFILE	TSSOP40,.8,20		Flash Memories		.5 mm	85 Cel	3-STATE	256KX8	256K	-40 Cel	1,2,1,1	YES			DUAL		R-PDSO-G40		3.6 V	1.2 mm	10000 Write/Erase Cycles	10 mm	Not Qualified	TOP	2097152 bit	2.7 V	USER-SELECTABLE 5V OR 12 V VPP; TOP BOOT BLOCK		NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.000008 Amp	18.4 mm		110 ns	5	NO
TMS28F020-17C5DDQ4	Texas Instruments	FLASH	AUTOMOTIVE	32	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		30 mA	262144 words	5	NO	5	8	SMALL OUTLINE, THIN PROFILE	TSOP32,.8		Flash Memories		.5 mm	125 Cel	3-STATE	256KX8	256K	-40 Cel		YES			DUAL		R-PDSO-G32		5.5 V	1.2 mm	100000 Write/Erase Cycles	8 mm	Not Qualified		2097152 bit	4.5 V			NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.0001 Amp	18.415 mm		170 ns	12	NO
TMS28F200AZT80BDCDL	Texas Instruments	FLASH	COMMERCIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	MOS	GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,96K,128K	65 mA	262144 words	5	NO	5	8	SMALL OUTLINE, THIN PROFILE	TSSOP48,.8,20	8	Flash Memories		.5 mm	70 Cel	3-STATE	256KX8	256K	0 Cel	1,2,1,1	YES			DUAL		R-PDSO-G48		5.5 V	1.2 mm	10000 Write/Erase Cycles	12 mm	Not Qualified	TOP	2097152 bit	4.5 V	10000 PROGRAM/ERASE CYCLES; CONFG AS 128K X 16; TOP BOOT BLOCK		NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.000008 Amp	18.4 mm		80 ns	12	NO
TMS28F800VT12BDCDQ	Texas Instruments	FLASH	AUTOMOTIVE	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS			1048576 words	3			8	SMALL OUTLINE, THIN PROFILE					.5 mm	125 Cel		1MX8	1M	-40 Cel					DUAL		R-PDSO-G48		3.6 V	1.2 mm		12 mm	Not Qualified	TOP	8388608 bit	2.7 V	CONFG AS 512K X 16; TOP BOOT BLOCK				NOR TYPE		18.4 mm		120 ns	3
TMS28F010-17C2DDL	Texas Instruments	FLASH	COMMERCIAL	32	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		30 mA	131072 words	5	NO	5	8	SMALL OUTLINE, THIN PROFILE	TSSOP32,.8,20		Flash Memories		.5 mm	70 Cel		128KX8	128K	0 Cel		YES			DUAL		R-PDSO-G32		5.5 V	1.2 mm	100 Write/Erase Cycles	8 mm	Not Qualified		1048576 bit	4.5 V	BULK ERASE		NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.0001 Amp	18.415 mm		170 ns	12	NO
TMS28F002AET70BDCDL	Texas Instruments	FLASH	COMMERCIAL	40	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,96K,128K	65 mA	262144 words	3	NO	3/5	8	SMALL OUTLINE, THIN PROFILE	TSSOP40,.8,20		Flash Memories		.5 mm	70 Cel	3-STATE	256KX8	256K	0 Cel	1,2,1,1	YES			DUAL		R-PDSO-G40		3.6 V	1.2 mm	10000 Write/Erase Cycles	10 mm	Not Qualified	TOP	2097152 bit	2.7 V	USER-SELECTABLE 5V OR 12 V VPP; TOP BOOT BLOCK		NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.000008 Amp	18.4 mm		130 ns	5	NO
TMS28F010A-17C3DDL4	Texas Instruments	FLASH	COMMERCIAL	32	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	MOS	GULL WING	PARALLEL	ASYNCHRONOUS			131072 words	5			8	SMALL OUTLINE, THIN PROFILE					.5 mm	70 Cel	3-STATE	128KX8	128K	0 Cel					DUAL		R-PDSO-G32		5.5 V	1.2 mm		8 mm	Not Qualified		1048576 bit	4.5 V	1000 PROGRAM/ERASE CYCLES				NOR TYPE		18.415 mm		170 ns	12
TMS28F800ZT80CDCDE	Texas Instruments	FLASH	INDUSTRIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS			1048576 words	5			8	SMALL OUTLINE, THIN PROFILE					.5 mm	85 Cel		1MX8	1M	-40 Cel					DUAL		R-PDSO-G48		5.5 V	1.2 mm		12 mm	Not Qualified	TOP	8388608 bit	4.5 V	CONFG AS 512K X 16; TOP BOOT BLOCK				NOR TYPE		18.4 mm		80 ns	3
TMS28F800SZB-80CDCDQ	Texas Instruments	FLASH	AUTOMOTIVE	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS			1048576 words	5			8	SMALL OUTLINE, THIN PROFILE					.5 mm	125 Cel		1MX8	1M	-40 Cel					DUAL		R-PDSO-G48		5.5 V	1.2 mm		12 mm	Not Qualified	BOTTOM	8388608 bit	4.5 V	100000 PROGRAM/ERASE CYCLES; TTL COMPATIBLE I/O; BOTTOM BOOT BLOCK				NOR TYPE		18.4 mm		80 ns	3
TMS28F800VT12BDCDE	Texas Instruments	FLASH	INDUSTRIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS			1048576 words	3			8	SMALL OUTLINE, THIN PROFILE					.5 mm	85 Cel		1MX8	1M	-40 Cel					DUAL		R-PDSO-G48		3.6 V	1.2 mm		12 mm	Not Qualified	TOP	8388608 bit	2.7 V	CONFG AS 512K X 16; TOP BOOT BLOCK				NOR TYPE		18.4 mm		120 ns	3
TMS28F200BZB-80BDBRQ	Texas Instruments	FLASH	AUTOMOTIVE	56	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,96K,128K	65 mA	262144 words	5	NO	5	8	SMALL OUTLINE, THIN PROFILE	TSSOP56,.8,20	16	Flash Memories		.5 mm	125 Cel	3-STATE	256KX8	256K	-40 Cel	1,2,1,1	YES			DUAL		R-PDSO-G56		5.5 V	1.2 mm	10000 Write/Erase Cycles	14 mm	Not Qualified	BOTTOM	2097152 bit	4.5 V	DEEP POWER-DOWN				NOR TYPE	.000008 Amp	18.4 mm		80 ns	12	NO
TMS28F512-15C2DDQ	Texas Instruments	FLASH	AUTOMOTIVE	32	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		30 mA	65536 words	5	NO	5	8	SMALL OUTLINE, THIN PROFILE	TSSOP32,.8,20		Flash Memories		.5 mm	125 Cel		64KX8	64K	-40 Cel		YES			DUAL		R-PDSO-G32		5.5 V	1.2 mm	100 Write/Erase Cycles	8 mm	Not Qualified		524288 bit	4.5 V	BULK ERASE		NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.0001 Amp	18.415 mm		150 ns	12	NO

Flash Memory

Flash memory is a type of non-volatile computer memory that is commonly used in digital devices such as USB drives, solid-state drives, and digital cameras. It is a type of EEPROM (Electrically Erasable Programmable Read-Only Memory) that allows data to be erased and reprogrammed in blocks instead of one byte at a time. Flash memory uses a floating gate transistor to store data, which allows it to retain information even when the power is turned off.

Flash memory is widely used in digital devices because of its high capacity, small size, and fast access times. It is also more durable than other types of memory, such as hard disk drives, because it has no moving parts. This makes it ideal for use in portable devices that may be subject to physical shock or vibration.

There are two types of flash memory: NOR flash and NAND flash. NOR flash is faster than NAND flash, but it has lower density and higher cost per bit. NOR flash is typically used for code storage, such as firmware or boot code, because it provides faster access times. NAND flash has higher density and lower cost per bit, which makes it ideal for data storage applications.

Flash memory has a limited lifespan, as it can only be erased and reprogrammed a limited number of times. This is because the process of erasing and reprogramming the memory causes wear and tear on the floating gate transistor. However, modern flash memory devices have a sophisticated wear-leveling algorithm that distributes writes evenly across the memory, which extends the lifespan of the device.