VBGA Flash Memory 1,037

Reset All

Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Screening Level	Terminal Form	Parallel or Serial	Operating Mode	No. of Words	Nominal Supply Voltage / Vsup (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Minimum Data Retention Time	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	Terminal Position	Write Protection	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Endurance	Maximum Clock Frequency (fCLK)	Width	Serial Bus Type	Memory Density	Minimum Supply Voltage (Vsup)	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Type	Length	Maximum Access Time	Programming Voltage (V)
S26HL512TGABHI020	Infineon Technologies	FLASH		24	VBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS	67108864 words	3	8	GRID ARRAY, VERY THIN PROFILE	BGA24,5X5,40	25	1 mm	85 Cel	OPEN-DRAIN	64MX8	64M	-40 Cel	BOTTOM	HARDWARE	R-PBGA-B24		3.6 V	1 mm	1280000 Write/Erase Cycles	200 MHz	6 mm	SPI	536870912 bit	2.7 V			NOR TYPE	8 mm		3
S26HL512TGABHM013	Infineon Technologies	FLASH		24	VBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	SERIAL	SYNCHRONOUS	67108864 words	3	8	GRID ARRAY, VERY THIN PROFILE	BGA24,5X5,40	25	1 mm	125 Cel	OPEN-DRAIN	64MX8	64M	-40 Cel	BOTTOM	HARDWARE	R-PBGA-B24		3.6 V	1 mm	1280000 Write/Erase Cycles	200 MHz	6 mm	SPI	536870912 bit	2.7 V			NOR TYPE	8 mm		3
S26HS512TGABHB003	Infineon Technologies	FLASH		24	VBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	SERIAL	SYNCHRONOUS	67108864 words	1.8	8	GRID ARRAY, VERY THIN PROFILE	BGA24,5X5,40	25	1 mm	105 Cel	OPEN-DRAIN	64MX8	64M	-40 Cel	BOTTOM	HARDWARE	R-PBGA-B24		2 V	1 mm	1280000 Write/Erase Cycles	200 MHz	6 mm	SPI	536870912 bit	1.7 V	NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	8 mm		1.8
S26HL512TFPBHB023	Infineon Technologies	FLASH		24	VBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	SERIAL	SYNCHRONOUS	67108864 words	3	8	GRID ARRAY, VERY THIN PROFILE	BGA24,5X5,40	25	1 mm	105 Cel	OPEN-DRAIN	64MX8	64M	-40 Cel	BOTTOM	HARDWARE	R-PBGA-B24		3.6 V	1 mm	1280000 Write/Erase Cycles	166 MHz	6 mm	SPI	536870912 bit	2.7 V			NOR TYPE	8 mm		3
S26KS512SDGBHB033	Infineon Technologies	FLASH	INDUSTRIAL	24	VBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100; TS 16949	BALL	PARALLEL	SYNCHRONOUS	67108864 words	1.8	8	GRID ARRAY, VERY THIN PROFILE			1 mm	105 Cel		64MX8	64M	-40 Cel	BOTTOM		R-PBGA-B24		1.95 V	1 mm			6 mm		536870912 bit	1.7 V				8 mm	96 ns	1.8
S26KS512SDGBHI033	Infineon Technologies	FLASH	INDUSTRIAL	24	VBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS	67108864 words	1.8	8	GRID ARRAY, VERY THIN PROFILE			1 mm	85 Cel		64MX8	64M	-40 Cel	BOTTOM		R-PBGA-B24		2 V	1 mm			6 mm		536870912 bit	1.7 V				8 mm	96 ns	1.8
S26KL512SDABHI030	Infineon Technologies	FLASH	INDUSTRIAL	24	VBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS	67108864 words	3	8	GRID ARRAY, VERY THIN PROFILE			1 mm	85 Cel		64MX8	64M	-40 Cel	BOTTOM		R-PBGA-B24	3	3.6 V	1 mm			6 mm		536870912 bit	2.7 V				8 mm	96 ns	3
S26KS128SDPBHM023	Infineon Technologies	FLASH	AUTOMOTIVE	24	VBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100; TS 16949	BALL	PARALLEL	SYNCHRONOUS	16777216 words	1.8	8	GRID ARRAY, VERY THIN PROFILE			1 mm	125 Cel		16MX8	16M	-40 Cel	BOTTOM		R-PBGA-B24	3	1.95 V	1 mm			6 mm		134217728 bit	1.7 V				8 mm	96 ns	1.8
S26KS128SDPBHA020	Infineon Technologies	FLASH	INDUSTRIAL	24	VBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100; TS 16949	BALL	PARALLEL	SYNCHRONOUS	16777216 words	1.8	8	GRID ARRAY, VERY THIN PROFILE			1 mm	85 Cel		16MX8	16M	-40 Cel	BOTTOM		R-PBGA-B24	3	1.95 V	1 mm			6 mm		134217728 bit	1.7 V				8 mm	96 ns	1.8
S26KS256SDABHM030	Infineon Technologies	FLASH	AUTOMOTIVE	24	VBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100; TS 16949	BALL	PARALLEL	SYNCHRONOUS	33554432 words	1.8	8	GRID ARRAY, VERY THIN PROFILE			1 mm	125 Cel		32MX8	32M	-40 Cel	BOTTOM		R-PBGA-B24	3	1.95 V	1 mm			6 mm		268435456 bit	1.7 V				8 mm	96 ns	1.8
S26KS128SDGBHV030	Infineon Technologies	FLASH	INDUSTRIAL	24	VBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS	16777216 words	1.8	8	GRID ARRAY, VERY THIN PROFILE			1 mm	105 Cel		16MX8	16M	-40 Cel	BOTTOM		R-PBGA-B24	3	2 V	1 mm			6 mm		134217728 bit	1.7 V				8 mm	96 ns	1.8
S26KS256SDABHN033	Infineon Technologies	FLASH	AUTOMOTIVE	24	VBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS	33554432 words	1.8	8	GRID ARRAY, VERY THIN PROFILE			1 mm	125 Cel		32MX8	32M	-40 Cel	BOTTOM		R-PBGA-B24		2 V	1 mm			6 mm		268435456 bit	1.7 V				8 mm	96 ns	1.8
S26KL512SDABHM033	Infineon Technologies	FLASH	AUTOMOTIVE	24	VBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100; TS 16949	BALL	PARALLEL	SYNCHRONOUS	67108864 words	3	8	GRID ARRAY, VERY THIN PROFILE			1 mm	125 Cel		64MX8	64M	-40 Cel	BOTTOM		R-PBGA-B24		3.6 V	1 mm			6 mm		536870912 bit	2.7 V				8 mm	96 ns	3
S26KL128SDABHI033	Infineon Technologies	FLASH	INDUSTRIAL	24	VBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS	16777216 words	3	8	GRID ARRAY, VERY THIN PROFILE			1 mm	85 Cel		16MX8	16M	-40 Cel	BOTTOM		R-PBGA-B24		3.6 V	1 mm			6 mm		134217728 bit	2.7 V				8 mm	96 ns	3
S26KS128SDABHI033	Infineon Technologies	FLASH	INDUSTRIAL	24	VBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS	16777216 words	1.8	8	GRID ARRAY, VERY THIN PROFILE			1 mm	85 Cel		16MX8	16M	-40 Cel	BOTTOM		R-PBGA-B24		2 V	1 mm			6 mm		134217728 bit	1.7 V				8 mm	96 ns	1.8
S26KL128SDABHA033	Infineon Technologies	FLASH	INDUSTRIAL	24	VBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100; TS 16949	BALL	PARALLEL	SYNCHRONOUS	16777216 words	3	8	GRID ARRAY, VERY THIN PROFILE			1 mm	85 Cel		16MX8	16M	-40 Cel	BOTTOM		R-PBGA-B24		3.6 V	1 mm			6 mm		134217728 bit	2.7 V				8 mm	96 ns	3
S26KL128SDABHN033	Infineon Technologies	FLASH	AUTOMOTIVE	24	VBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS	16777216 words	3	8	GRID ARRAY, VERY THIN PROFILE			1 mm	125 Cel		16MX8	16M	-40 Cel	BOTTOM		R-PBGA-B24		3.6 V	1 mm			6 mm		134217728 bit	2.7 V				8 mm	96 ns	3
S26KL128SDABHN030	Infineon Technologies	FLASH	AUTOMOTIVE	24	VBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS	16777216 words	3	8	GRID ARRAY, VERY THIN PROFILE			1 mm	125 Cel		16MX8	16M	-40 Cel	BOTTOM		R-PBGA-B24	3	3.6 V	1 mm			6 mm		134217728 bit	2.7 V				8 mm	96 ns	3
S26KS128SDGBHI033	Infineon Technologies	FLASH	INDUSTRIAL	24	VBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS	16777216 words	1.8	8	GRID ARRAY, VERY THIN PROFILE			1 mm	85 Cel		16MX8	16M	-40 Cel	BOTTOM		R-PBGA-B24		2 V	1 mm			6 mm		134217728 bit	1.7 V				8 mm	96 ns	1.8
S26KS256SDGBHB030	Infineon Technologies	FLASH	INDUSTRIAL	24	VBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	PARALLEL	SYNCHRONOUS	33554432 words	1.8	8	GRID ARRAY, VERY THIN PROFILE			1 mm	105 Cel		32MX8	32M	-40 Cel	BOTTOM		R-PBGA-B24	3	2 V	1 mm			6 mm		268435456 bit	1.7 V				8 mm	96 ns	1.8
S26KL256SDABHI033	Infineon Technologies	FLASH	INDUSTRIAL	24	VBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS	33554432 words	3	8	GRID ARRAY, VERY THIN PROFILE			1 mm	85 Cel		32MX8	32M	-40 Cel	BOTTOM		R-PBGA-B24		3.6 V	1 mm			6 mm		268435456 bit	2.7 V				8 mm	96 ns	3
S26KS512SDPBHB023	Infineon Technologies	FLASH	INDUSTRIAL	24	VBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100; TS 16949	BALL	PARALLEL	SYNCHRONOUS	67108864 words	1.8	8	GRID ARRAY, VERY THIN PROFILE			1 mm	105 Cel		64MX8	64M	-40 Cel	BOTTOM		R-PBGA-B24		1.95 V	1 mm			6 mm		536870912 bit	1.7 V				8 mm	96 ns	1.8
S26KS512SDPBHM023	Infineon Technologies	FLASH	AUTOMOTIVE	24	VBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100; TS 16949	BALL	PARALLEL	SYNCHRONOUS	67108864 words	1.8	8	GRID ARRAY, VERY THIN PROFILE			1 mm	125 Cel		64MX8	64M	-40 Cel	BOTTOM		R-PBGA-B24		1.95 V	1 mm			6 mm		536870912 bit	1.7 V				8 mm	96 ns	1.8
S26KS128SDABHV030	Infineon Technologies	FLASH	INDUSTRIAL	24	VBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS	16777216 words	1.8	8	GRID ARRAY, VERY THIN PROFILE			1 mm	105 Cel		16MX8	16M	-40 Cel	BOTTOM		R-PBGA-B24	3	2 V	1 mm			6 mm		134217728 bit	1.7 V				8 mm	96 ns	1.8
S26KS256SDABHA030	Infineon Technologies	FLASH	INDUSTRIAL	24	VBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100; TS 16949	BALL	PARALLEL	SYNCHRONOUS	33554432 words	1.8	8	GRID ARRAY, VERY THIN PROFILE			1 mm	85 Cel		32MX8	32M	-40 Cel	BOTTOM		R-PBGA-B24	3	1.95 V	1 mm			6 mm		268435456 bit	1.7 V				8 mm	96 ns	1.8
S26KL256SDABHN033	Infineon Technologies	FLASH	AUTOMOTIVE	24	VBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS	33554432 words	3	8	GRID ARRAY, VERY THIN PROFILE			1 mm	125 Cel		32MX8	32M	-40 Cel	BOTTOM		R-PBGA-B24		3.6 V	1 mm			6 mm		268435456 bit	2.7 V				8 mm	96 ns	3
S26KL256SDABHM030	Infineon Technologies	FLASH	AUTOMOTIVE	24	VBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100; TS 16949	BALL	PARALLEL	SYNCHRONOUS	33554432 words	3	8	GRID ARRAY, VERY THIN PROFILE			1 mm	125 Cel		32MX8	32M	-40 Cel	BOTTOM		R-PBGA-B24	3	3.6 V	1 mm			6 mm		268435456 bit	2.7 V				8 mm	96 ns	3
S26KS128SDGBHV033	Infineon Technologies	FLASH	INDUSTRIAL	24	VBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS	16777216 words	1.8	8	GRID ARRAY, VERY THIN PROFILE			1 mm	105 Cel		16MX8	16M	-40 Cel	BOTTOM		R-PBGA-B24		2 V	1 mm			6 mm		134217728 bit	1.7 V				8 mm	96 ns	1.8
S26KS256SDGBHV033	Infineon Technologies	FLASH	INDUSTRIAL	24	VBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS	33554432 words	1.8	8	GRID ARRAY, VERY THIN PROFILE			1 mm	105 Cel		32MX8	32M	-40 Cel	BOTTOM		R-PBGA-B24		2 V	1 mm			6 mm		268435456 bit	1.7 V				8 mm	96 ns	1.8
S26KL512SDABHN030	Infineon Technologies	FLASH	AUTOMOTIVE	24	VBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS	67108864 words	3	8	GRID ARRAY, VERY THIN PROFILE			1 mm	125 Cel		64MX8	64M	-40 Cel	BOTTOM		R-PBGA-B24	3	3.6 V	1 mm			6 mm		536870912 bit	2.7 V				8 mm	96 ns	3
S26KS512SDABHV030	Infineon Technologies	FLASH	INDUSTRIAL	24	VBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS	67108864 words	1.8	8	GRID ARRAY, VERY THIN PROFILE			1 mm	105 Cel		64MX8	64M	-40 Cel	BOTTOM		R-PBGA-B24	3	2 V	1 mm			6 mm		536870912 bit	1.7 V				8 mm	96 ns	1.8
S26KL512SDABHI033	Infineon Technologies	FLASH	INDUSTRIAL	24	VBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS	67108864 words	3	8	GRID ARRAY, VERY THIN PROFILE			1 mm	85 Cel		64MX8	64M	-40 Cel	BOTTOM		R-PBGA-B24		3.6 V	1 mm			6 mm		536870912 bit	2.7 V				8 mm	96 ns	3
S26KS128SDGBHN033	Infineon Technologies	FLASH	AUTOMOTIVE	24	VBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS	16777216 words	1.8	8	GRID ARRAY, VERY THIN PROFILE			1 mm	125 Cel		16MX8	16M	-40 Cel	BOTTOM		R-PBGA-B24		2 V	1 mm			6 mm		134217728 bit	1.7 V				8 mm	96 ns	1.8
S26KL256SDABHA023	Infineon Technologies	FLASH	INDUSTRIAL	24	VBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100; TS 16949	BALL	PARALLEL	SYNCHRONOUS	33554432 words	3	8	GRID ARRAY, VERY THIN PROFILE			1 mm	85 Cel		32MX8	32M	-40 Cel	BOTTOM		R-PBGA-B24		3.6 V	1 mm			6 mm		268435456 bit	2.7 V				8 mm	96 ns	3
S26KL512SDABHA020	Infineon Technologies	FLASH	INDUSTRIAL	24	VBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	PARALLEL	SYNCHRONOUS	67108864 words	3	8	GRID ARRAY, VERY THIN PROFILE			1 mm	85 Cel		64MX8	64M	-40 Cel	BOTTOM		R-PBGA-B24	3	3.6 V	1 mm			6 mm		536870912 bit	2.7 V				8 mm	96 ns	3
S26KS512SDABHA030	Infineon Technologies	FLASH	INDUSTRIAL	24	VBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100; TS 16949	BALL	PARALLEL	SYNCHRONOUS	67108864 words	1.8	8	GRID ARRAY, VERY THIN PROFILE			1 mm	85 Cel		64MX8	64M	-40 Cel	BOTTOM		R-PBGA-B24	3	1.95 V	1 mm			6 mm		536870912 bit	1.7 V				8 mm	96 ns	1.8
S26KS512SDGBHV033	Infineon Technologies	FLASH	INDUSTRIAL	24	VBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS	67108864 words	1.8	8	GRID ARRAY, VERY THIN PROFILE			1 mm	105 Cel		64MX8	64M	-40 Cel	BOTTOM		R-PBGA-B24		2 V	1 mm			6 mm		536870912 bit	1.7 V				8 mm	96 ns	1.8
S26KL256SDABHM023	Infineon Technologies	FLASH	AUTOMOTIVE	24	VBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100; TS 16949	BALL	PARALLEL	SYNCHRONOUS	33554432 words	3	8	GRID ARRAY, VERY THIN PROFILE			1 mm	125 Cel		32MX8	32M	-40 Cel	BOTTOM		R-PBGA-B24		3.6 V	1 mm			6 mm		268435456 bit	2.7 V				8 mm	96 ns	3
S26KL128SDABHV033	Infineon Technologies	FLASH	INDUSTRIAL	24	VBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS	16777216 words	3	8	GRID ARRAY, VERY THIN PROFILE			1 mm	105 Cel		16MX8	16M	-40 Cel	BOTTOM		R-PBGA-B24		3.6 V	1 mm			6 mm		134217728 bit	2.7 V				8 mm	96 ns	3
S26KS512SDGBHI030	Infineon Technologies	FLASH	INDUSTRIAL	24	VBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS	67108864 words	1.8	8	GRID ARRAY, VERY THIN PROFILE			1 mm	85 Cel		64MX8	64M	-40 Cel	BOTTOM		R-PBGA-B24	3	2 V	1 mm			6 mm		536870912 bit	1.7 V				8 mm	96 ns	1.8
S26KS128SDGBHN030	Infineon Technologies	FLASH	AUTOMOTIVE	24	VBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS	16777216 words	1.8	8	GRID ARRAY, VERY THIN PROFILE			1 mm	125 Cel		16MX8	16M	-40 Cel	BOTTOM		R-PBGA-B24	3	2 V	1 mm			6 mm		134217728 bit	1.7 V				8 mm	96 ns	1.8
S26KL128SDABHM030	Infineon Technologies	FLASH	AUTOMOTIVE	24	VBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100; TS 16949	BALL	PARALLEL	SYNCHRONOUS	16777216 words	3	8	GRID ARRAY, VERY THIN PROFILE			1 mm	125 Cel		16MX8	16M	-40 Cel	BOTTOM		R-PBGA-B24	3	3.6 V	1 mm			6 mm		134217728 bit	2.7 V				8 mm	96 ns	3
S26KL512SDABHB030	Infineon Technologies	FLASH	INDUSTRIAL	24	VBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	PARALLEL	SYNCHRONOUS	67108864 words	3	8	GRID ARRAY, VERY THIN PROFILE			1 mm	105 Cel		64MX8	64M	-40 Cel	BOTTOM		R-PBGA-B24	3	3.6 V	1 mm			6 mm		536870912 bit	2.7 V				8 mm	96 ns	3
S26KS512SDGBHA033	Infineon Technologies	FLASH	INDUSTRIAL	24	VBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100; TS 16949	BALL	PARALLEL	SYNCHRONOUS	67108864 words	1.8	8	GRID ARRAY, VERY THIN PROFILE			1 mm	85 Cel		64MX8	64M	-40 Cel	BOTTOM		R-PBGA-B24		1.95 V	1 mm			6 mm		536870912 bit	1.7 V				8 mm	96 ns	1.8
S26KS128SDPBHA023	Infineon Technologies	FLASH	INDUSTRIAL	24	VBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100; TS 16949	BALL	PARALLEL	SYNCHRONOUS	16777216 words	1.8	8	GRID ARRAY, VERY THIN PROFILE			1 mm	85 Cel		16MX8	16M	-40 Cel	BOTTOM		R-PBGA-B24		1.95 V	1 mm			6 mm		134217728 bit	1.7 V				8 mm	96 ns	1.8
S26KS128SDABHA033	Infineon Technologies	FLASH	INDUSTRIAL	24	VBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100; TS 16949	BALL	PARALLEL	SYNCHRONOUS	16777216 words	1.8	8	GRID ARRAY, VERY THIN PROFILE			1 mm	85 Cel		16MX8	16M	-40 Cel	BOTTOM		R-PBGA-B24		1.95 V	1 mm			6 mm		134217728 bit	1.7 V				8 mm	96 ns	1.8
S26KS256SDABHV030	Infineon Technologies	FLASH	INDUSTRIAL	24	VBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS	33554432 words	1.8	8	GRID ARRAY, VERY THIN PROFILE			1 mm	105 Cel		32MX8	32M	-40 Cel	BOTTOM		R-PBGA-B24	3	2 V	1 mm			6 mm		268435456 bit	1.7 V				8 mm	96 ns	1.8
S26KL256SDABHV033	Infineon Technologies	FLASH	INDUSTRIAL	24	VBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS	33554432 words	3	8	GRID ARRAY, VERY THIN PROFILE			1 mm	105 Cel		32MX8	32M	-40 Cel	BOTTOM		R-PBGA-B24		3.6 V	1 mm			6 mm		268435456 bit	2.7 V				8 mm	96 ns	3

Flash Memory

Flash memory is a type of non-volatile computer memory that is commonly used in digital devices such as USB drives, solid-state drives, and digital cameras. It is a type of EEPROM (Electrically Erasable Programmable Read-Only Memory) that allows data to be erased and reprogrammed in blocks instead of one byte at a time. Flash memory uses a floating gate transistor to store data, which allows it to retain information even when the power is turned off.

Flash memory is widely used in digital devices because of its high capacity, small size, and fast access times. It is also more durable than other types of memory, such as hard disk drives, because it has no moving parts. This makes it ideal for use in portable devices that may be subject to physical shock or vibration.

There are two types of flash memory: NOR flash and NAND flash. NOR flash is faster than NAND flash, but it has lower density and higher cost per bit. NOR flash is typically used for code storage, such as firmware or boot code, because it provides faster access times. NAND flash has higher density and lower cost per bit, which makes it ideal for data storage applications.

Flash memory has a limited lifespan, as it can only be erased and reprogrammed a limited number of times. This is because the process of erasing and reprogramming the memory causes wear and tear on the floating gate transistor. However, modern flash memory devices have a sophisticated wear-leveling algorithm that distributes writes evenly across the memory, which extends the lifespan of the device.