VBGA Flash Memory 1,037

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Screening Level	Terminal Form	Parallel or Serial	Operating Mode	Maximum Supply Current	No. of Words	Nominal Supply Voltage / Vsup (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Minimum Data Retention Time	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	Terminal Finish	Terminal Position	Write Protection	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Endurance	Maximum Clock Frequency (fCLK)	Width	Serial Bus Type	Memory Density	Minimum Supply Voltage (Vsup)	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Type	Maximum Standby Current	Length	Maximum Access Time	Programming Voltage (V)
S26HL512TGABHI020	Infineon Technologies	FLASH		24	VBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS		67108864 words	3	8	GRID ARRAY, VERY THIN PROFILE	BGA24,5X5,40	25	1 mm	85 Cel	OPEN-DRAIN	64MX8	64M	-40 Cel		BOTTOM	HARDWARE	R-PBGA-B24		3.6 V	1 mm	1280000 Write/Erase Cycles	200 MHz	6 mm	SPI	536870912 bit	2.7 V				NOR TYPE		8 mm		3
S26HL512TGABHM013	Infineon Technologies	FLASH		24	VBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	SERIAL	SYNCHRONOUS		67108864 words	3	8	GRID ARRAY, VERY THIN PROFILE	BGA24,5X5,40	25	1 mm	125 Cel	OPEN-DRAIN	64MX8	64M	-40 Cel		BOTTOM	HARDWARE	R-PBGA-B24		3.6 V	1 mm	1280000 Write/Erase Cycles	200 MHz	6 mm	SPI	536870912 bit	2.7 V				NOR TYPE		8 mm		3
S26HS512TGABHB003	Infineon Technologies	FLASH		24	VBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	SERIAL	SYNCHRONOUS		67108864 words	1.8	8	GRID ARRAY, VERY THIN PROFILE	BGA24,5X5,40	25	1 mm	105 Cel	OPEN-DRAIN	64MX8	64M	-40 Cel		BOTTOM	HARDWARE	R-PBGA-B24		2 V	1 mm	1280000 Write/Erase Cycles	200 MHz	6 mm	SPI	536870912 bit	1.7 V		NOT SPECIFIED	NOT SPECIFIED	NOR TYPE		8 mm		1.8
S26HL512TFPBHB023	Infineon Technologies	FLASH		24	VBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	SERIAL	SYNCHRONOUS		67108864 words	3	8	GRID ARRAY, VERY THIN PROFILE	BGA24,5X5,40	25	1 mm	105 Cel	OPEN-DRAIN	64MX8	64M	-40 Cel		BOTTOM	HARDWARE	R-PBGA-B24		3.6 V	1 mm	1280000 Write/Erase Cycles	166 MHz	6 mm	SPI	536870912 bit	2.7 V				NOR TYPE		8 mm		3
S25HS512TDPBHI010	Infineon Technologies	FLASH		24	VBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS	69 mA	67108864 words	1.8	8	GRID ARRAY, VERY THIN PROFILE	BGA24,5X5,40	25	1 mm	85 Cel		64MX8	64M	-40 Cel		BOTTOM	HARDWARE	S-PBGA-B24	3	2 V	1 mm	1280000 Write/Erase Cycles	133 MHz	8 mm	SPI	536870912 bit	1.7 V				NOR TYPE	.00034 Amp	8 mm		1.8
S26KL256SDABHI030	Infineon Technologies	FLASH	INDUSTRIAL	24	VBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS		33554432 words	3	8	GRID ARRAY, VERY THIN PROFILE			1 mm	85 Cel		32MX8	32M	-40 Cel		BOTTOM		R-PBGA-B24	3	3.6 V	1 mm			6 mm		268435456 bit	2.7 V						8 mm	96 ns	3
S25HS01GTFABHV030	Infineon Technologies	FLASH		24	VBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS	72 mA	134217728 words	1.8	8	GRID ARRAY, VERY THIN PROFILE	BGA24,5X5,40	25	1 mm	105 Cel		128MX8	128M	-40 Cel		BOTTOM	HARDWARE	S-PBGA-B24	3	2 V	1 mm	2560000 Write/Erase Cycles	166 MHz	8 mm	SPI	1073741824 bit	1.7 V				NOR TYPE	.00051 Amp	8 mm		1.8
S26KS256SDPBHA023	Infineon Technologies	FLASH	INDUSTRIAL	24	VBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100; TS 16949	BALL	PARALLEL	SYNCHRONOUS		33554432 words	1.8	8	GRID ARRAY, VERY THIN PROFILE			1 mm	85 Cel		32MX8	32M	-40 Cel	TIN SILVER COPPER	BOTTOM		R-PBGA-B24	3	1.95 V	1 mm			6 mm		268435456 bit	1.7 V	e1					8 mm	96 ns	1.8
S25HL512TDPBHI010	Infineon Technologies	FLASH		24	VBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS	69 mA	67108864 words	3	8	GRID ARRAY, VERY THIN PROFILE	BGA24,5X5,40	25	1 mm	85 Cel		64MX8	64M	-40 Cel		BOTTOM	HARDWARE	S-PBGA-B24	3	3.6 V	1 mm	1280000 Write/Erase Cycles	133 MHz	8 mm	SPI	536870912 bit	2.7 V				NOR TYPE	.00034 Amp	8 mm		3
S25HL01GTFABHB033	Infineon Technologies	FLASH		24	VBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	SERIAL	SYNCHRONOUS	69 mA	134217728 words	3	8	GRID ARRAY, VERY THIN PROFILE	BGA24,5X5,40	25	1 mm	105 Cel		128MX8	128M	-40 Cel		BOTTOM	HARDWARE	S-PBGA-B24	3	3.6 V	1 mm	2560000 Write/Erase Cycles	166 MHz	8 mm	SPI	1073741824 bit	2.7 V				NOR TYPE	.00056 Amp	8 mm		3
S25HS01GTFABHB030	Infineon Technologies	FLASH		24	VBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	SERIAL	SYNCHRONOUS	72 mA	134217728 words	1.8	8	GRID ARRAY, VERY THIN PROFILE	BGA24,5X5,40	25	1 mm	105 Cel		128MX8	128M	-40 Cel		BOTTOM	HARDWARE	S-PBGA-B24	3	2 V	1 mm	2560000 Write/Erase Cycles	166 MHz	8 mm	SPI	1073741824 bit	1.7 V				NOR TYPE	.00051 Amp	8 mm		1.8
S26KS512SDPBHA023	Infineon Technologies	FLASH	INDUSTRIAL	24	VBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100; TS 16949	BALL	PARALLEL	SYNCHRONOUS		67108864 words	1.8	8	GRID ARRAY, VERY THIN PROFILE			1 mm	85 Cel		64MX8	64M	-40 Cel		BOTTOM		R-PBGA-B24	3	1.95 V	1 mm			6 mm		536870912 bit	1.7 V						8 mm	96 ns	1.8
S26KS256SDGBHA030	Infineon Technologies	FLASH	INDUSTRIAL	24	VBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100; TS 16949	BALL	PARALLEL	SYNCHRONOUS		33554432 words	1.8	8	GRID ARRAY, VERY THIN PROFILE			1 mm	85 Cel		32MX8	32M	-40 Cel		BOTTOM		R-PBGA-B24	3	1.95 V	1 mm			6 mm		268435456 bit	1.7 V						8 mm	96 ns	1.8
S26KS128SDGBHB030	Infineon Technologies	FLASH	INDUSTRIAL	24	VBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	PARALLEL	SYNCHRONOUS		16777216 words	1.8	8	GRID ARRAY, VERY THIN PROFILE			1 mm	105 Cel		16MX8	16M	-40 Cel		BOTTOM		R-PBGA-B24	3	2 V	1 mm			6 mm		134217728 bit	1.7 V						8 mm	96 ns	1.8
S25HL01GTDPBHI033	Infineon Technologies	FLASH		24	VBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS	69 mA	134217728 words	3	8	GRID ARRAY, VERY THIN PROFILE	BGA24,5X5,40	25	1 mm	85 Cel		128MX8	128M	-40 Cel		BOTTOM	HARDWARE	S-PBGA-B24	3	3.6 V	1 mm	2560000 Write/Erase Cycles	133 MHz	8 mm	SPI	1073741824 bit	2.7 V				NOR TYPE	.00056 Amp	8 mm		3
S26KS256SDPBHM020	Infineon Technologies	FLASH	AUTOMOTIVE	24	VBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100; TS 16949	BALL	PARALLEL	SYNCHRONOUS		33554432 words	1.8	8	GRID ARRAY, VERY THIN PROFILE			1 mm	125 Cel		32MX8	32M	-40 Cel		BOTTOM		R-PBGA-B24	3	1.95 V	1 mm			6 mm		268435456 bit	1.7 V						8 mm	96 ns	1.8
S25HS01GTFABHV033	Infineon Technologies	FLASH		24	VBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS	72 mA	134217728 words	1.8	8	GRID ARRAY, VERY THIN PROFILE	BGA24,5X5,40	25	1 mm	105 Cel		128MX8	128M	-40 Cel		BOTTOM	HARDWARE	S-PBGA-B24	3	2 V	1 mm	2560000 Write/Erase Cycles	166 MHz	8 mm	SPI	1073741824 bit	1.7 V				NOR TYPE	.00051 Amp	8 mm		1.8
S25HL512TFABHM010	Infineon Technologies	FLASH		24	VBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	SERIAL	SYNCHRONOUS	69 mA	67108864 words	3	8	GRID ARRAY, VERY THIN PROFILE	BGA24,5X5,40	25	1 mm	125 Cel		64MX8	64M	-40 Cel		BOTTOM	HARDWARE	S-PBGA-B24	3	3.6 V	1 mm	1280000 Write/Erase Cycles	166 MHz	8 mm	SPI	536870912 bit	2.7 V				NOR TYPE	.00034 Amp	8 mm		3
S26KL512SDABHM030	Infineon Technologies	FLASH	AUTOMOTIVE	24	VBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100; TS 16949	BALL	PARALLEL	SYNCHRONOUS		67108864 words	3	8	GRID ARRAY, VERY THIN PROFILE			1 mm	125 Cel		64MX8	64M	-40 Cel		BOTTOM		R-PBGA-B24	3	3.6 V	1 mm			6 mm		536870912 bit	2.7 V						8 mm	96 ns	3
S26KS512SDGBHM030	Infineon Technologies	FLASH	AUTOMOTIVE	24	VBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100; TS 16949	BALL	PARALLEL	SYNCHRONOUS		67108864 words	1.8	8	GRID ARRAY, VERY THIN PROFILE			1 mm	125 Cel		64MX8	64M	-40 Cel		BOTTOM		R-PBGA-B24	3	1.95 V	1 mm			6 mm		536870912 bit	1.7 V						8 mm	96 ns	1.8
S25HS01GTFABHM033	Infineon Technologies	FLASH		24	VBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	SERIAL	SYNCHRONOUS	72 mA	134217728 words	1.8	8	GRID ARRAY, VERY THIN PROFILE	BGA24,5X5,40	25	1 mm	125 Cel		128MX8	128M	-40 Cel		BOTTOM	HARDWARE	S-PBGA-B24	3	2 V	1 mm	2560000 Write/Erase Cycles	166 MHz	8 mm	SPI	1073741824 bit	1.7 V				NOR TYPE	.00051 Amp	8 mm		1.8
S25HL512TDPBHV010	Infineon Technologies	FLASH		24	VBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS	69 mA	67108864 words	3	8	GRID ARRAY, VERY THIN PROFILE	BGA24,5X5,40	25	1 mm	105 Cel		64MX8	64M	-40 Cel		BOTTOM	HARDWARE	S-PBGA-B24	3	3.6 V	1 mm	1280000 Write/Erase Cycles	133 MHz	8 mm	SPI	536870912 bit	2.7 V				NOR TYPE	.00034 Amp	8 mm		3
S25HL512TDPBHB013	Infineon Technologies	FLASH		24	VBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	SERIAL	SYNCHRONOUS	69 mA	67108864 words	3	8	GRID ARRAY, VERY THIN PROFILE	BGA24,5X5,40	25	1 mm	105 Cel		64MX8	64M	-40 Cel		BOTTOM	HARDWARE	S-PBGA-B24	3	3.6 V	1 mm	1280000 Write/Erase Cycles	133 MHz	8 mm	SPI	536870912 bit	2.7 V				NOR TYPE	.00034 Amp	8 mm		3
S25HS512TFABHI010	Infineon Technologies	FLASH		24	VBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS	69 mA	67108864 words	1.8	8	GRID ARRAY, VERY THIN PROFILE	BGA24,5X5,40	25	1 mm	85 Cel		64MX8	64M	-40 Cel		BOTTOM	HARDWARE	S-PBGA-B24	3	2 V	1 mm	1280000 Write/Erase Cycles	166 MHz	8 mm	SPI	536870912 bit	1.7 V				NOR TYPE	.00034 Amp	8 mm		1.8
S25HS512TDPBHB013	Infineon Technologies	FLASH		24	VBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	SERIAL	SYNCHRONOUS	69 mA	67108864 words	1.8	8	GRID ARRAY, VERY THIN PROFILE	BGA24,5X5,40	25	1 mm	105 Cel		64MX8	64M	-40 Cel		BOTTOM	HARDWARE	S-PBGA-B24	3	2 V	1 mm	1280000 Write/Erase Cycles	133 MHz	8 mm	SPI	536870912 bit	1.7 V				NOR TYPE	.00034 Amp	8 mm		1.8
S25HL512TFABHV010	Infineon Technologies	FLASH		24	VBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS	69 mA	67108864 words	3	8	GRID ARRAY, VERY THIN PROFILE	BGA24,5X5,40	25	1 mm	105 Cel		64MX8	64M	-40 Cel		BOTTOM	HARDWARE	S-PBGA-B24	3	3.6 V	1 mm	1280000 Write/Erase Cycles	166 MHz	8 mm	SPI	536870912 bit	2.7 V				NOR TYPE	.00034 Amp	8 mm		3
S25HL512TDPBHV013	Infineon Technologies	FLASH		24	VBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS	69 mA	67108864 words	3	8	GRID ARRAY, VERY THIN PROFILE	BGA24,5X5,40	25	1 mm	105 Cel		64MX8	64M	-40 Cel		BOTTOM	HARDWARE	S-PBGA-B24	3	3.6 V	1 mm	1280000 Write/Erase Cycles	133 MHz	8 mm	SPI	536870912 bit	2.7 V				NOR TYPE	.00034 Amp	8 mm		3
S25HL01GTDPBHM033	Infineon Technologies	FLASH		24	VBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	SERIAL	SYNCHRONOUS	69 mA	134217728 words	3	8	GRID ARRAY, VERY THIN PROFILE	BGA24,5X5,40	25	1 mm	125 Cel		128MX8	128M	-40 Cel		BOTTOM	HARDWARE	S-PBGA-B24	3	3.6 V	1 mm	2560000 Write/Erase Cycles	133 MHz	8 mm	SPI	1073741824 bit	2.7 V				NOR TYPE	.00056 Amp	8 mm		3
S25HS512TFABHB010	Infineon Technologies	FLASH		24	VBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	SERIAL	SYNCHRONOUS	69 mA	67108864 words	1.8	8	GRID ARRAY, VERY THIN PROFILE	BGA24,5X5,40	25	1 mm	105 Cel		64MX8	64M	-40 Cel		BOTTOM	HARDWARE	S-PBGA-B24	3	2 V	1 mm	1280000 Write/Erase Cycles	166 MHz	8 mm	SPI	536870912 bit	1.7 V				NOR TYPE	.00034 Amp	8 mm		1.8
S25HS512TDSBHV013	Infineon Technologies	FLASH		24	VBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS	69 mA	67108864 words	1.8	8	GRID ARRAY, VERY THIN PROFILE	BGA24,5X5,40	25	1 mm	105 Cel		64MX8	64M	-40 Cel		BOTTOM	HARDWARE	S-PBGA-B24	3	2 V	1 mm	1280000 Write/Erase Cycles	166 MHz	8 mm	SPI	536870912 bit	1.7 V				NOR TYPE	.00034 Amp	8 mm		1.8
S25HS512TDPBHM010	Infineon Technologies	FLASH		24	VBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	SERIAL	SYNCHRONOUS	69 mA	67108864 words	1.8	8	GRID ARRAY, VERY THIN PROFILE	BGA24,5X5,40	25	1 mm	125 Cel		64MX8	64M	-40 Cel		BOTTOM	HARDWARE	S-PBGA-B24	3	2 V	1 mm	1280000 Write/Erase Cycles	133 MHz	8 mm	SPI	536870912 bit	1.7 V				NOR TYPE	.00034 Amp	8 mm		1.8
S25HL01GTFABHB030	Infineon Technologies	FLASH		24	VBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	SERIAL	SYNCHRONOUS	69 mA	134217728 words	3	8	GRID ARRAY, VERY THIN PROFILE	BGA24,5X5,40	25	1 mm	105 Cel		128MX8	128M	-40 Cel		BOTTOM	HARDWARE	S-PBGA-B24	3	3.6 V	1 mm	2560000 Write/Erase Cycles	166 MHz	8 mm	SPI	1073741824 bit	2.7 V				NOR TYPE	.00056 Amp	8 mm		3
S25HS01GTDPBHB030	Infineon Technologies	FLASH		24	VBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	SERIAL	SYNCHRONOUS	72 mA	134217728 words	1.8	8	GRID ARRAY, VERY THIN PROFILE	BGA24,5X5,40	25	1 mm	105 Cel		128MX8	128M	-40 Cel		BOTTOM	HARDWARE	S-PBGA-B24	3	2 V	1 mm	2560000 Write/Erase Cycles	133 MHz	8 mm	SPI	1073741824 bit	1.7 V				NOR TYPE	.00051 Amp	8 mm		1.8
S25HS01GTFABHA033	Infineon Technologies	FLASH		24	VBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	SERIAL	SYNCHRONOUS	72 mA	134217728 words	1.8	8	GRID ARRAY, VERY THIN PROFILE	BGA24,5X5,40	25	1 mm	85 Cel		128MX8	128M	-40 Cel		BOTTOM	HARDWARE	S-PBGA-B24	3	2 V	1 mm	2560000 Write/Erase Cycles	166 MHz	8 mm	SPI	1073741824 bit	1.7 V				NOR TYPE	.00051 Amp	8 mm		1.8
S25HS512TFABHB013	Infineon Technologies	FLASH		24	VBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	SERIAL	SYNCHRONOUS	69 mA	67108864 words	1.8	8	GRID ARRAY, VERY THIN PROFILE	BGA24,5X5,40	25	1 mm	105 Cel		64MX8	64M	-40 Cel		BOTTOM	HARDWARE	S-PBGA-B24	3	2 V	1 mm	1280000 Write/Erase Cycles	166 MHz	8 mm	SPI	536870912 bit	1.7 V				NOR TYPE	.00034 Amp	8 mm		1.8
S25HS01GTDPBHB033	Infineon Technologies	FLASH		24	VBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	SERIAL	SYNCHRONOUS	72 mA	134217728 words	1.8	8	GRID ARRAY, VERY THIN PROFILE	BGA24,5X5,40	25	1 mm	105 Cel		128MX8	128M	-40 Cel		BOTTOM	HARDWARE	S-PBGA-B24	3	2 V	1 mm	2560000 Write/Erase Cycles	133 MHz	8 mm	SPI	1073741824 bit	1.7 V				NOR TYPE	.00051 Amp	8 mm		1.8
S26KL256SDABHB030	Infineon Technologies	FLASH	INDUSTRIAL	24	VBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	PARALLEL	SYNCHRONOUS		33554432 words	3	8	GRID ARRAY, VERY THIN PROFILE			1 mm	105 Cel		32MX8	32M	-40 Cel		BOTTOM		R-PBGA-B24	3	3.6 V	1 mm			6 mm		268435456 bit	2.7 V						8 mm	96 ns	3
S26KS128SDGBHI030	Infineon Technologies	FLASH	INDUSTRIAL	24	VBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS		16777216 words	1.8	8	GRID ARRAY, VERY THIN PROFILE			1 mm	85 Cel		16MX8	16M	-40 Cel		BOTTOM		R-PBGA-B24	3	2 V	1 mm			6 mm		134217728 bit	1.7 V						8 mm	96 ns	1.8
S25HL01GTDPBHA033	Infineon Technologies	FLASH		24	VBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	SERIAL	SYNCHRONOUS	69 mA	134217728 words	3	8	GRID ARRAY, VERY THIN PROFILE	BGA24,5X5,40	25	1 mm	85 Cel		128MX8	128M	-40 Cel		BOTTOM	HARDWARE	S-PBGA-B24	3	3.6 V	1 mm	2560000 Write/Erase Cycles	133 MHz	8 mm	SPI	1073741824 bit	2.7 V				NOR TYPE	.00056 Amp	8 mm		3
S25HL01GTFABHI033	Infineon Technologies	FLASH		24	VBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS	69 mA	134217728 words	3	8	GRID ARRAY, VERY THIN PROFILE	BGA24,5X5,40	25	1 mm	85 Cel		128MX8	128M	-40 Cel		BOTTOM	HARDWARE	S-PBGA-B24	3	3.6 V	1 mm	2560000 Write/Erase Cycles	166 MHz	8 mm	SPI	1073741824 bit	2.7 V				NOR TYPE	.00056 Amp	8 mm		3
S25HS512TDPBHI013	Infineon Technologies	FLASH		24	VBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS	69 mA	67108864 words	1.8	8	GRID ARRAY, VERY THIN PROFILE	BGA24,5X5,40	25	1 mm	85 Cel		64MX8	64M	-40 Cel		BOTTOM	HARDWARE	S-PBGA-B24	3	2 V	1 mm	1280000 Write/Erase Cycles	133 MHz	8 mm	SPI	536870912 bit	1.7 V				NOR TYPE	.00034 Amp	8 mm		1.8
S26KS512SDGBHN030	Infineon Technologies	FLASH	AUTOMOTIVE	24	VBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS		67108864 words	1.8	8	GRID ARRAY, VERY THIN PROFILE			1 mm	125 Cel		64MX8	64M	-40 Cel		BOTTOM		R-PBGA-B24	3	2 V	1 mm			6 mm		536870912 bit	1.7 V						8 mm	96 ns	1.8
S26KL256SDABHB023	Infineon Technologies	FLASH	INDUSTRIAL	24	VBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100; TS 16949	BALL	PARALLEL	SYNCHRONOUS		33554432 words	3	8	GRID ARRAY, VERY THIN PROFILE			1 mm	105 Cel		32MX8	32M	-40 Cel		BOTTOM		R-PBGA-B24	3	3.6 V	1 mm			6 mm		268435456 bit	2.7 V						8 mm	96 ns	3
S25HS512TFABHV010	Infineon Technologies	FLASH		24	VBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS	69 mA	67108864 words	1.8	8	GRID ARRAY, VERY THIN PROFILE	BGA24,5X5,40	25	1 mm	105 Cel		64MX8	64M	-40 Cel		BOTTOM	HARDWARE	S-PBGA-B24	3	2 V	1 mm	1280000 Write/Erase Cycles	166 MHz	8 mm	SPI	536870912 bit	1.7 V				NOR TYPE	.00034 Amp	8 mm		1.8
S25HS512TDPBHA010	Infineon Technologies	FLASH		24	VBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	SERIAL	SYNCHRONOUS	69 mA	67108864 words	1.8	8	GRID ARRAY, VERY THIN PROFILE	BGA24,5X5,40	25	1 mm	85 Cel		64MX8	64M	-40 Cel		BOTTOM	HARDWARE	S-PBGA-B24		2 V	1 mm	1280000 Write/Erase Cycles	133 MHz	8 mm	SPI	536870912 bit	1.7 V				NOR TYPE	.00034 Amp	8 mm		1.8
S25HL512TFABHM013	Infineon Technologies	FLASH		24	VBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	SERIAL	SYNCHRONOUS	69 mA	67108864 words	3	8	GRID ARRAY, VERY THIN PROFILE	BGA24,5X5,40	25	1 mm	125 Cel		64MX8	64M	-40 Cel		BOTTOM	HARDWARE	S-PBGA-B24	3	3.6 V	1 mm	1280000 Write/Erase Cycles	166 MHz	8 mm	SPI	536870912 bit	2.7 V				NOR TYPE	.00034 Amp	8 mm		3
S25HL01GTFABHV030	Infineon Technologies	FLASH		24	VBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS	69 mA	134217728 words	3	8	GRID ARRAY, VERY THIN PROFILE	BGA24,5X5,40	25	1 mm	105 Cel		128MX8	128M	-40 Cel		BOTTOM	HARDWARE	S-PBGA-B24	3	3.6 V	1 mm	2560000 Write/Erase Cycles	166 MHz	8 mm	SPI	1073741824 bit	2.7 V				NOR TYPE	.00056 Amp	8 mm		3
S25HL512TDPBHA013	Infineon Technologies	FLASH		24	VBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	SERIAL	SYNCHRONOUS	69 mA	67108864 words	3	8	GRID ARRAY, VERY THIN PROFILE	BGA24,5X5,40	25	1 mm	85 Cel		64MX8	64M	-40 Cel		BOTTOM	HARDWARE	S-PBGA-B24		3.6 V	1 mm	1280000 Write/Erase Cycles	133 MHz	8 mm	SPI	536870912 bit	2.7 V				NOR TYPE	.00034 Amp	8 mm		3

Flash Memory

Flash memory is a type of non-volatile computer memory that is commonly used in digital devices such as USB drives, solid-state drives, and digital cameras. It is a type of EEPROM (Electrically Erasable Programmable Read-Only Memory) that allows data to be erased and reprogrammed in blocks instead of one byte at a time. Flash memory uses a floating gate transistor to store data, which allows it to retain information even when the power is turned off.

Flash memory is widely used in digital devices because of its high capacity, small size, and fast access times. It is also more durable than other types of memory, such as hard disk drives, because it has no moving parts. This makes it ideal for use in portable devices that may be subject to physical shock or vibration.

There are two types of flash memory: NOR flash and NAND flash. NOR flash is faster than NAND flash, but it has lower density and higher cost per bit. NOR flash is typically used for code storage, such as firmware or boot code, because it provides faster access times. NAND flash has higher density and lower cost per bit, which makes it ideal for data storage applications.

Flash memory has a limited lifespan, as it can only be erased and reprogrammed a limited number of times. This is because the process of erasing and reprogramming the memory causes wear and tear on the floating gate transistor. However, modern flash memory devices have a sophisticated wear-leveling algorithm that distributes writes evenly across the memory, which extends the lifespan of the device.