VBGA Flash Memory 1,037

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Screening Level	Terminal Form	Parallel or Serial	Operating Mode	Sector Size (Words)	Maximum Supply Current	No. of Words	Nominal Supply Voltage / Vsup (V)	Toggle Bit	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Minimum Data Retention Time	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	No. of Sectors/Size	Command User Interface	Terminal Finish	Ready or Busy	Terminal Position	Write Protection	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Endurance	Maximum Clock Frequency (fCLK)	Width	Qualification	Serial Bus Type	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	Page Size (words)	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Type	Maximum Standby Current	Length	Maximum Access Time	Programming Voltage (V)	Data Polling
S25HS512TFABHI013	Infineon Technologies	FLASH		24	VBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS		69 mA	67108864 words	1.8			8	GRID ARRAY, VERY THIN PROFILE	BGA24,5X5,40		25	1 mm	85 Cel		64MX8	64M	-40 Cel					BOTTOM	HARDWARE	S-PBGA-B24	3	2 V	1 mm	1280000 Write/Erase Cycles	166 MHz	8 mm		SPI	536870912 bit	1.7 V						NOR TYPE	.00034 Amp	8 mm		1.8
S25HS01GTDPBHA030	Infineon Technologies	FLASH		24	VBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	SERIAL	SYNCHRONOUS		72 mA	134217728 words	1.8			8	GRID ARRAY, VERY THIN PROFILE	BGA24,5X5,40		25	1 mm	85 Cel		128MX8	128M	-40 Cel					BOTTOM	HARDWARE	S-PBGA-B24	3	2 V	1 mm	2560000 Write/Erase Cycles	133 MHz	8 mm		SPI	1073741824 bit	1.7 V						NOR TYPE	.00051 Amp	8 mm		1.8
S26KL512SDABHV033	Infineon Technologies	FLASH	INDUSTRIAL	24	VBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS			67108864 words	3			8	GRID ARRAY, VERY THIN PROFILE				1 mm	105 Cel		64MX8	64M	-40 Cel					BOTTOM		R-PBGA-B24		3.6 V	1 mm			6 mm			536870912 bit	2.7 V								8 mm	96 ns	3
S26KS128SDGBHM033	Infineon Technologies	FLASH	AUTOMOTIVE	24	VBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100; TS 16949	BALL	PARALLEL	SYNCHRONOUS			16777216 words	1.8			8	GRID ARRAY, VERY THIN PROFILE				1 mm	125 Cel		16MX8	16M	-40 Cel					BOTTOM		R-PBGA-B24		1.95 V	1 mm			6 mm			134217728 bit	1.7 V								8 mm	96 ns	1.8
S26KS512SDGBHN033	Infineon Technologies	FLASH	AUTOMOTIVE	24	VBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS			67108864 words	1.8			8	GRID ARRAY, VERY THIN PROFILE				1 mm	125 Cel		64MX8	64M	-40 Cel					BOTTOM		R-PBGA-B24		2 V	1 mm			6 mm			536870912 bit	1.7 V								8 mm	96 ns	1.8
S26KS256SDGBHN033	Infineon Technologies	FLASH	AUTOMOTIVE	24	VBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS			33554432 words	1.8			8	GRID ARRAY, VERY THIN PROFILE				1 mm	125 Cel		32MX8	32M	-40 Cel					BOTTOM		R-PBGA-B24		2 V	1 mm			6 mm			268435456 bit	1.7 V								8 mm	96 ns	1.8
S26KL256SDABHB033	Infineon Technologies	FLASH	INDUSTRIAL	24	VBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100; TS 16949	BALL	PARALLEL	SYNCHRONOUS			33554432 words	3			8	GRID ARRAY, VERY THIN PROFILE				1 mm	105 Cel		32MX8	32M	-40 Cel					BOTTOM		R-PBGA-B24		3.6 V	1 mm			6 mm			268435456 bit	2.7 V								8 mm	96 ns	3
S26KL128SDABHB023	Infineon Technologies	FLASH	INDUSTRIAL	24	VBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100; TS 16949	BALL	PARALLEL	SYNCHRONOUS			16777216 words	3			8	GRID ARRAY, VERY THIN PROFILE				1 mm	105 Cel		16MX8	16M	-40 Cel					BOTTOM		R-PBGA-B24	3	3.6 V	1 mm			6 mm			134217728 bit	2.7 V								8 mm	96 ns	3
S26KS512SDABHN033	Infineon Technologies	FLASH	AUTOMOTIVE	24	VBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS			67108864 words	1.8			8	GRID ARRAY, VERY THIN PROFILE				1 mm	125 Cel		64MX8	64M	-40 Cel					BOTTOM		R-PBGA-B24		2 V	1 mm			6 mm			536870912 bit	1.7 V								8 mm	96 ns	1.8
S26KS128SDABHA030	Infineon Technologies	FLASH	INDUSTRIAL	24	VBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100; TS 16949	BALL	PARALLEL	SYNCHRONOUS			16777216 words	1.8			8	GRID ARRAY, VERY THIN PROFILE				1 mm	85 Cel		16MX8	16M	-40 Cel					BOTTOM		R-PBGA-B24	3	1.95 V	1 mm			6 mm			134217728 bit	1.7 V								8 mm	96 ns	1.8
S26KL128SDABHM033	Infineon Technologies	FLASH	AUTOMOTIVE	24	VBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100; TS 16949	BALL	PARALLEL	SYNCHRONOUS			16777216 words	3			8	GRID ARRAY, VERY THIN PROFILE				1 mm	125 Cel		16MX8	16M	-40 Cel					BOTTOM		R-PBGA-B24		3.6 V	1 mm			6 mm			134217728 bit	2.7 V								8 mm	96 ns	3
S26KL256SDABHA033	Infineon Technologies	FLASH	INDUSTRIAL	24	VBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100; TS 16949	BALL	PARALLEL	SYNCHRONOUS			33554432 words	3			8	GRID ARRAY, VERY THIN PROFILE				1 mm	85 Cel		32MX8	32M	-40 Cel					BOTTOM		R-PBGA-B24		3.6 V	1 mm			6 mm			268435456 bit	2.7 V								8 mm	96 ns	3
S26KS256SDABHM033	Infineon Technologies	FLASH	AUTOMOTIVE	24	VBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100; TS 16949	BALL	PARALLEL	SYNCHRONOUS			33554432 words	1.8			8	GRID ARRAY, VERY THIN PROFILE				1 mm	125 Cel		32MX8	32M	-40 Cel					BOTTOM		R-PBGA-B24		1.95 V	1 mm			6 mm			268435456 bit	1.7 V								8 mm	96 ns	1.8
S26KL128SDABHB033	Infineon Technologies	FLASH	INDUSTRIAL	24	VBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100; TS 16949	BALL	PARALLEL	SYNCHRONOUS			16777216 words	3			8	GRID ARRAY, VERY THIN PROFILE				1 mm	105 Cel		16MX8	16M	-40 Cel					BOTTOM		R-PBGA-B24		3.6 V	1 mm			6 mm			134217728 bit	2.7 V								8 mm	96 ns	3
S26KL512SDABHA023	Infineon Technologies	FLASH	INDUSTRIAL	24	VBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100; TS 16949	BALL	PARALLEL	SYNCHRONOUS			67108864 words	3			8	GRID ARRAY, VERY THIN PROFILE				1 mm	85 Cel		64MX8	64M	-40 Cel					BOTTOM		R-PBGA-B24		3.6 V	1 mm			6 mm			536870912 bit	2.7 V								8 mm	96 ns	3
S26KS512SDGBHM033	Infineon Technologies	FLASH	AUTOMOTIVE	24	VBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100; TS 16949	BALL	PARALLEL	SYNCHRONOUS			67108864 words	1.8			8	GRID ARRAY, VERY THIN PROFILE				1 mm	125 Cel		64MX8	64M	-40 Cel					BOTTOM		R-PBGA-B24		1.95 V	1 mm			6 mm			536870912 bit	1.7 V								8 mm	96 ns	1.8
S26KL512SDABHM020	Infineon Technologies	FLASH	AUTOMOTIVE	24	VBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100; TS 16949	BALL	PARALLEL	SYNCHRONOUS			67108864 words	3			8	GRID ARRAY, VERY THIN PROFILE				1 mm	125 Cel		64MX8	64M	-40 Cel					BOTTOM		R-PBGA-B24		3.6 V	1 mm			6 mm			536870912 bit	2.7 V								8 mm	96 ns	3
S26KL256SDABHM033	Infineon Technologies	FLASH	AUTOMOTIVE	24	VBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100; TS 16949	BALL	PARALLEL	SYNCHRONOUS			33554432 words	3			8	GRID ARRAY, VERY THIN PROFILE				1 mm	125 Cel		32MX8	32M	-40 Cel					BOTTOM		R-PBGA-B24		3.6 V	1 mm			6 mm			268435456 bit	2.7 V								8 mm	96 ns	3
S26KS512SDABHV033	Infineon Technologies	FLASH	INDUSTRIAL	24	VBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS			67108864 words	1.8			8	GRID ARRAY, VERY THIN PROFILE				1 mm	105 Cel		64MX8	64M	-40 Cel					BOTTOM		R-PBGA-B24		2 V	1 mm			6 mm			536870912 bit	1.7 V								8 mm	96 ns	1.8
S26KS256SDABHN030	Infineon Technologies	FLASH	AUTOMOTIVE	24	VBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS			33554432 words	1.8			8	GRID ARRAY, VERY THIN PROFILE				1 mm	125 Cel		32MX8	32M	-40 Cel					BOTTOM		R-PBGA-B24	3	2 V	1 mm			6 mm			268435456 bit	1.7 V								8 mm	96 ns	1.8
S26KS128SDABHN033	Infineon Technologies	FLASH	AUTOMOTIVE	24	VBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS			16777216 words	1.8			8	GRID ARRAY, VERY THIN PROFILE				1 mm	125 Cel		16MX8	16M	-40 Cel					BOTTOM		R-PBGA-B24		2 V	1 mm			6 mm			134217728 bit	1.7 V								8 mm	96 ns	1.8
S26KS256SDPBHM023	Infineon Technologies	FLASH	AUTOMOTIVE	24	VBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100; TS 16949	BALL	PARALLEL	SYNCHRONOUS			33554432 words	1.8			8	GRID ARRAY, VERY THIN PROFILE				1 mm	125 Cel		32MX8	32M	-40 Cel					BOTTOM		R-PBGA-B24	3	1.95 V	1 mm			6 mm			268435456 bit	1.7 V								8 mm	96 ns	1.8
S26KS128SDABHM033	Infineon Technologies	FLASH	AUTOMOTIVE	24	VBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100; TS 16949	BALL	PARALLEL	SYNCHRONOUS			16777216 words	1.8			8	GRID ARRAY, VERY THIN PROFILE				1 mm	125 Cel		16MX8	16M	-40 Cel					BOTTOM		R-PBGA-B24		1.95 V	1 mm			6 mm			134217728 bit	1.7 V								8 mm	96 ns	1.8
S26KL128SDABHA023	Infineon Technologies	FLASH	INDUSTRIAL	24	VBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100; TS 16949	BALL	PARALLEL	SYNCHRONOUS			16777216 words	3			8	GRID ARRAY, VERY THIN PROFILE				1 mm	85 Cel		16MX8	16M	-40 Cel					BOTTOM		R-PBGA-B24		3.6 V	1 mm			6 mm			134217728 bit	2.7 V								8 mm	96 ns	3
S26KS512SDABHI030	Infineon Technologies	FLASH	INDUSTRIAL	24	VBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS			67108864 words	1.8			8	GRID ARRAY, VERY THIN PROFILE				1 mm	85 Cel		64MX8	64M	-40 Cel					BOTTOM		R-PBGA-B24	3	2 V	1 mm			6 mm			536870912 bit	1.7 V								8 mm	96 ns	1.8
S26KS256SDGBHI033	Infineon Technologies	FLASH	INDUSTRIAL	24	VBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS			33554432 words	1.8			8	GRID ARRAY, VERY THIN PROFILE				1 mm	85 Cel		32MX8	32M	-40 Cel					BOTTOM		R-PBGA-B24		2 V	1 mm			6 mm			268435456 bit	1.7 V								8 mm	96 ns	1.8
S26KS256SDABHB030	Infineon Technologies	FLASH	INDUSTRIAL	24	VBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100; TS 16949	BALL	PARALLEL	SYNCHRONOUS			33554432 words	1.8			8	GRID ARRAY, VERY THIN PROFILE				1 mm	105 Cel		32MX8	32M	-40 Cel					BOTTOM		R-PBGA-B24	3	1.95 V	1 mm			6 mm			268435456 bit	1.7 V								8 mm	96 ns	1.8
S26KS256SDGBHA033	Infineon Technologies	FLASH	INDUSTRIAL	24	VBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100; TS 16949	BALL	PARALLEL	SYNCHRONOUS			33554432 words	1.8			8	GRID ARRAY, VERY THIN PROFILE				1 mm	85 Cel		32MX8	32M	-40 Cel					BOTTOM		R-PBGA-B24		1.95 V	1 mm			6 mm			268435456 bit	1.7 V								8 mm	96 ns	1.8
S26KL256SDABHV030	Infineon Technologies	FLASH	INDUSTRIAL	24	VBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS			33554432 words	3			8	GRID ARRAY, VERY THIN PROFILE				1 mm	105 Cel		32MX8	32M	-40 Cel					BOTTOM		R-PBGA-B24	3	3.6 V	1 mm			6 mm			268435456 bit	2.7 V								8 mm	96 ns	3
AT45DQ161-CCUF-T	Renesas Electronics	FLASH	INDUSTRIAL	9	VBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS			16777216 words	3			1	GRID ARRAY, VERY THIN PROFILE				1 mm	85 Cel		16MX1	16M	-40 Cel			Tin/Silver/Copper (Sn/Ag/Cu)		BOTTOM		S-PBGA-B9		3.6 V	.6 mm		100 MHz	6 mm			16777216 bit	2.5 V	IT ALSO OPERATES AT FREQUENCY 85 MHZ AT 2.3 TO 3.6 V SUPPLY VOLTAGE		e1					6 mm		3
AT45DQ321-CCUF-T	Renesas Electronics	FLASH	INDUSTRIAL	9	VBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS			33554432 words	3			1	GRID ARRAY, VERY THIN PROFILE				1 mm	85 Cel		32MX1	32M	-40 Cel					BOTTOM		S-PBGA-B9		3.6 V	.6 mm		104 MHz	6 mm			33554432 bit	2.3 V				NOT SPECIFIED	NOT SPECIFIED			6 mm		3
AT45DQ161-CCUF	Renesas Electronics	FLASH		8	VBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS		26 mA	2097152 words	3			8	GRID ARRAY, VERY THIN PROFILE	BGA9,3X3,40		20	1 mm	85 Cel	3-STATE	2MX8	2M	-40 Cel					BOTTOM	HARDWARE/SOFTWARE	S-PBGA-B9		3.6 V	.6 mm	100000 Write/Erase Cycles	85 MHz	6 mm		SPI	16777216 bit	2.3 V						NOR TYPE	.000015 Amp	6 mm		3
K9WBG08U1M-IIB00	Samsung	FLASH	INDUSTRIAL	52	VBGA	RECTANGULAR	UNSPECIFIED	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	256K	35 mA	4294967296 words	3.3	NO	3.3	8	GRID ARRAY	LGA52(UNSPEC)	Flash Memories		1 mm	85 Cel		4GX8	4G	-40 Cel	16K	YES		YES	BOTTOM		R-XBGA-B52		3.6 V	1 mm			12 mm	Not Qualified		34359738368 bit	2.7 V		4K		NOT SPECIFIED	NOT SPECIFIED		.0001 Amp	17 mm	25 ns	3	NO
K9K8G08U1A-I	Samsung	FLASH		52	VBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	ASYNCHRONOUS			1073741824 words	3.3			8	GRID ARRAY, VERY THIN PROFILE				2 mm			1GX8	1G						BOTTOM		R-PBGA-B52		3.6 V	.65 mm			12 mm	Not Qualified		8589934592 bit	2.7 V								17 mm		2.7
K9KAG08U1M-IIB00	Samsung	FLASH	COMMERCIAL	52	VBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	256K	30 mA	2147483648 words	3.3		3.3	8	GRID ARRAY, VERY THIN PROFILE	LGA52(UNSPEC)	Flash Memories		1 mm	70 Cel		2GX8	2G	0 Cel	4K	YES		YES	BOTTOM		R-PBGA-B52		3.6 V	.65 mm			12 mm	Not Qualified		17179869184 bit	2.7 V		4K		NOT SPECIFIED	NOT SPECIFIED		.001 Amp	17 mm	20 ns	2.7
K9WAG08U1M-IIB00	Samsung	FLASH	INDUSTRIAL	52	VBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BUTT	PARALLEL	ASYNCHRONOUS			2147483648 words	3.3			8	GRID ARRAY, VERY THIN PROFILE				2 mm	85 Cel		2GX8	2G	-40 Cel					BOTTOM		R-PBGA-BU52	3	3.6 V	1 mm			12 mm	Not Qualified		17179869184 bit	2.7 V	CONTAINS ADDITIONAL 256M BIT SPARE NAND MEMORY				260			17 mm	20 ns	2.7
K9K8G08U1A-IIB00	Samsung	FLASH	INDUSTRIAL	52	VBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	128K	30 mA	1073741824 words	3.3	NO	3/3.3	8	GRID ARRAY, VERY THIN PROFILE	LGA52(UNSPEC)	Flash Memories		2 mm	85 Cel		1GX8	1G	-40 Cel	8K	YES		YES	BOTTOM		R-PBGA-B52	3	3.6 V	.65 mm			12 mm	Not Qualified		8589934592 bit	2.7 V		2K			260		.00005 Amp	17 mm	20 ns	2.7	NO
K9F4G08U0A-IIB00	Samsung	FLASH	INDUSTRIAL	52	VBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	128K	30 mA	536870912 words	3.3	NO	3/3.3	8	GRID ARRAY, VERY THIN PROFILE	LGA52(UNSPEC)	Flash Memories		2 mm	85 Cel		512MX8	512M	-40 Cel	4K	YES		YES	BOTTOM		R-PBGA-B52	3	3.6 V	.65 mm			12 mm	Not Qualified		4294967296 bit	2.7 V		2K			260		.00005 Amp	17 mm	20 ns	2.7	NO
K9F4G08U0A-ICB00	Samsung	FLASH	COMMERCIAL	52	VBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	128K	30 mA	536870912 words	3.3	NO	3/3.3	8	GRID ARRAY, VERY THIN PROFILE	LGA52(UNSPEC)	Flash Memories		2 mm	70 Cel		512MX8	512M	0 Cel	4K	YES		YES	BOTTOM		R-PBGA-B52		3.6 V	.65 mm			12 mm	Not Qualified		4294967296 bit	2.7 V		2K					.00005 Amp	17 mm	20 ns	2.7	NO
K9F4G08U0B-IIB00	Samsung	FLASH	INDUSTRIAL	52	VBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BUTT	PARALLEL	ASYNCHRONOUS			536870912 words	3.3			8	GRID ARRAY				1 mm	85 Cel		512MX8	512M	-40 Cel					BOTTOM		R-PBGA-B52		3.6 V	.65 mm			12 mm	Not Qualified		4294967296 bit	2.7 V								17 mm	25 ns	3.3
K9F4G08U0B-ICB00	Samsung	FLASH	COMMERCIAL	52	VBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BUTT	PARALLEL	ASYNCHRONOUS			536870912 words	3.3			8	GRID ARRAY				1 mm	70 Cel		512MX8	512M	0 Cel					BOTTOM		R-PBGA-B52		3.6 V	.65 mm			12 mm	Not Qualified		4294967296 bit	2.7 V								17 mm	25 ns	3.3
K9K8G08U1B-ICB00	Samsung	FLASH	COMMERCIAL	52	VBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BUTT	PARALLEL	ASYNCHRONOUS			1073741824 words	3.3			8	GRID ARRAY				1 mm	70 Cel		1GX8	1G	0 Cel					BOTTOM		R-PBGA-B52		3.6 V	.65 mm			12 mm	Not Qualified		8589934592 bit	2.7 V								17 mm	25 ns	3.3
K9KAG08U1M-ICB00	Samsung	FLASH	COMMERCIAL	52	VBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	256K	30 mA	2147483648 words	3.3		3.3	8	GRID ARRAY, VERY THIN PROFILE	LGA52(UNSPEC)	Flash Memories		1 mm	70 Cel		2GX8	2G	0 Cel	4K	YES		YES	BOTTOM		R-PBGA-B52		3.6 V	.65 mm			12 mm	Not Qualified		17179869184 bit	2.7 V		4K		NOT SPECIFIED	NOT SPECIFIED		.001 Amp	17 mm	20 ns	2.7
K9K8G08U1A-ICB00	Samsung	FLASH	COMMERCIAL	52	VBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	128K	30 mA	1073741824 words	3.3	NO	3/3.3	8	GRID ARRAY, VERY THIN PROFILE	LGA52(UNSPEC)	Flash Memories		2 mm	70 Cel		1GX8	1G	0 Cel	8K	YES		YES	BOTTOM		R-PBGA-B52		3.6 V	.65 mm			12 mm	Not Qualified		8589934592 bit	2.7 V		2K					.00005 Amp	17 mm	20 ns	2.7	NO
K9F8G08U0M-ICB00	Samsung	FLASH	COMMERCIAL	52	VBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	256K	30 mA	1073741824 words	3.3	NO	3.3	8	GRID ARRAY, VERY THIN PROFILE	LGA52(UNSPEC)	Flash Memories		1 mm	70 Cel		1GX8	1G	0 Cel	4K	YES		YES	BOTTOM		R-PBGA-B52		3.6 V	.65 mm			12 mm	Not Qualified		8589934592 bit	2.7 V		4K		NOT SPECIFIED	NOT SPECIFIED		.00005 Amp	17 mm	20 ns	2.7	NO
K9WBG08U1M-ICB00	Samsung	FLASH	COMMERCIAL	52	VBGA	RECTANGULAR	UNSPECIFIED	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	256K	35 mA	4294967296 words	3.3	NO	3.3	8	GRID ARRAY	LGA52(UNSPEC)	Flash Memories		1 mm	70 Cel		4GX8	4G	0 Cel	16K	YES		YES	BOTTOM		R-XBGA-B52		3.6 V	1 mm			12 mm	Not Qualified		34359738368 bit	2.7 V		4K		NOT SPECIFIED	NOT SPECIFIED		.0001 Amp	17 mm	25 ns	3	NO
K9F4G08U0A-I	Samsung	FLASH		52	VBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	ASYNCHRONOUS			536870912 words	3.3			8	GRID ARRAY, VERY THIN PROFILE				2 mm			512MX8	512M						BOTTOM		R-PBGA-B52		3.6 V	.65 mm			12 mm	Not Qualified		4294967296 bit	2.7 V								17 mm		2.7
K9F2G08U0M-IIB00	Samsung	FLASH	INDUSTRIAL	52	VBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	128K	30 mA	268435456 words	3.3	NO	3/3.3	8	GRID ARRAY, VERY THIN PROFILE	LGA52(UNSPEC)	Flash Memories		1 mm	85 Cel		256MX8	256M	-40 Cel	2K	YES		YES	BOTTOM		R-PBGA-B52		3.6 V	.65 mm			12 mm	Not Qualified		2147483648 bit	2.7 V	CONTAINS ADDITIONAL 64M BIT NAND FLASH	2K				SLC NAND TYPE	.00005 Amp	17 mm	30 ns	2.7	NO

Flash Memory

Flash memory is a type of non-volatile computer memory that is commonly used in digital devices such as USB drives, solid-state drives, and digital cameras. It is a type of EEPROM (Electrically Erasable Programmable Read-Only Memory) that allows data to be erased and reprogrammed in blocks instead of one byte at a time. Flash memory uses a floating gate transistor to store data, which allows it to retain information even when the power is turned off.

Flash memory is widely used in digital devices because of its high capacity, small size, and fast access times. It is also more durable than other types of memory, such as hard disk drives, because it has no moving parts. This makes it ideal for use in portable devices that may be subject to physical shock or vibration.

There are two types of flash memory: NOR flash and NAND flash. NOR flash is faster than NAND flash, but it has lower density and higher cost per bit. NOR flash is typically used for code storage, such as firmware or boot code, because it provides faster access times. NAND flash has higher density and lower cost per bit, which makes it ideal for data storage applications.

Flash memory has a limited lifespan, as it can only be erased and reprogrammed a limited number of times. This is because the process of erasing and reprogramming the memory causes wear and tear on the floating gate transistor. However, modern flash memory devices have a sophisticated wear-leveling algorithm that distributes writes evenly across the memory, which extends the lifespan of the device.