VFBGA Flash Memory 2,400+

Reset All

Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Terminal Form	Parallel or Serial	Operating Mode	Sector Size (Words)	Maximum Supply Current	No. of Words	Nominal Supply Voltage / Vsup (V)	Toggle Bit	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Organization	No. of Words Code	Minimum Operating Temperature	No. of Sectors/Size	Command User Interface	Terminal Finish	Terminal Position	JESD-30 Code	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Width	Qualification	Boot Block	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	Page Size (words)	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Type	Maximum Standby Current	Length	Common Flash Interface	Maximum Access Time	Programming Voltage (V)	Data Polling
M28W160BB70GB1	STMicroelectronics	FLASH	COMMERCIAL	46	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	4K,32K	20 mA	1048576 words	3	NO	3/3.3	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA46,6X8,30	Flash Memories	.75 mm	70 Cel	1MX16	1M	0 Cel	8,31	YES	TIN LEAD	BOTTOM	R-PBGA-B46	3.6 V	1 mm	6.37 mm	Not Qualified	BOTTOM	16777216 bit	2.7 V	BOTTOM BOOT BLOCK		e0			NOR TYPE	.000005 Amp	6.39 mm	YES	70 ns	3	NO
M58WR128EB70ZB6	STMicroelectronics	FLASH	INDUSTRIAL	60	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	4K,32K	30 mA	8388608 words	1.8	NO	1.8/2,1.8/3	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA60,9X10,30	Flash Memories	.75 mm	85 Cel	8MX16	8M	-40 Cel	8, 255	YES	Tin/Lead (Sn63Pb37)	BOTTOM	R-PBGA-B60	2.2 V	1 mm	12 mm	Not Qualified	BOTTOM	134217728 bit	1.7 V	SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE	4	e0			NOR TYPE	.000005 Amp	12.5 mm	YES	70 ns	1.8	NO
M58WR128FT70ZB6F	STMicroelectronics	FLASH	INDUSTRIAL	56	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	4K,32K	30 mA	8388608 words	1.8	NO	1.8	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA56,7X8,30	Flash Memories	.75 mm	85 Cel	8MX16	8M	-40 Cel	8, 255	YES	TIN SILVER COPPER	BOTTOM	R-PBGA-B56	2 V	1 mm	7.7 mm	Not Qualified	TOP	134217728 bit	1.7 V	SYNCHRONOUS BURST MODE OPERATION POSSIBLE	4	e1			NOR TYPE	.000005 Amp	9 mm	YES	70 ns	1.8	NO
M58WR032FT70ZB6	STMicroelectronics	FLASH	INDUSTRIAL	56	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	4K,32K	45 mA	2097152 words	1.8	NO	1.8,1.8/2	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA56,7X8,30	Flash Memories	.75 mm	85 Cel	2MX16	2M	-40 Cel	8,63	YES	TIN LEAD	BOTTOM	R-PBGA-B56	2 V	1 mm	7.7 mm	Not Qualified	TOP	33554432 bit	1.7 V	SYNCHRONOUS BURST MODE OPERATION POSSIBLE	4	e0			NOR TYPE	.000005 Amp	9 mm	YES	70 ns	1.8	NO
M28W320CT85GB1	STMicroelectronics	FLASH	COMMERCIAL	47	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	4K,32K	20 mA	2097152 words	3	NO	3,3/3.3	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA47,6X8,30	Flash Memories	.75 mm	70 Cel	2MX16	2M	0 Cel	8,63	YES		BOTTOM	R-PBGA-B47	3.6 V	1 mm	6.39 mm	Not Qualified	TOP	33554432 bit	2.7 V	TOP BOOT BLOCK			NOT SPECIFIED	260	NOR TYPE	.000005 Amp	10.5 mm	YES	85 ns	3	NO
M28W320CB90GB6T	STMicroelectronics	FLASH	INDUSTRIAL	47	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	4K,32K	20 mA	2097152 words	3	NO	3,3/3.3	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA47,6X8,30	Flash Memories	.75 mm	85 Cel	2MX16	2M	-40 Cel	8,63	YES		BOTTOM	R-PBGA-B47	3.6 V	1 mm	6.39 mm	Not Qualified	BOTTOM	33554432 bit	2.7 V	BOTTOM BOOT BLOCK					NOR TYPE	.000005 Amp	10.5 mm	YES	90 ns	3	NO
M28W160BB70GB6T	STMicroelectronics	FLASH	INDUSTRIAL	46	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	4K,32K	20 mA	1048576 words	3	NO	3/3.3	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA46,6X8,30	Flash Memories	.75 mm	85 Cel	1MX16	1M	-40 Cel	8,31	YES	TIN LEAD	BOTTOM	R-PBGA-B46	3.6 V	1 mm	6.37 mm	Not Qualified	BOTTOM	16777216 bit	2.7 V	BOTTOM BOOT BLOCK		e0			NOR TYPE	.000005 Amp	6.39 mm	YES	70 ns	3	NO
M28W320CT70GB6	STMicroelectronics	FLASH	INDUSTRIAL	47	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	4K,32K	20 mA	2097152 words	3	NO	3,3/3.3	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA47,6X8,30	Flash Memories	.75 mm	85 Cel	2MX16	2M	-40 Cel	8,63	YES		BOTTOM	R-PBGA-B47	3.6 V	1 mm	6.39 mm	Not Qualified	TOP	33554432 bit	2.7 V	TOP BOOT BLOCK			NOT SPECIFIED	260	NOR TYPE	.000005 Amp	10.5 mm	YES	70 ns	3	NO
M28W160BT100GB6	STMicroelectronics	FLASH	INDUSTRIAL	46	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	4K,32K	20 mA	1048576 words	3	NO	1.8/2.5,3/3.3	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA48,6X8,30	Flash Memories	.75 mm	85 Cel	1MX16	1M	-40 Cel	8,31	YES	TIN LEAD	BOTTOM	R-PBGA-B46	3.6 V	1 mm	6.37 mm	Not Qualified	TOP	16777216 bit	2.7 V	TOP BOOT BLOCK		e0			NOR TYPE	.000005 Amp	6.39 mm	YES	100 ns	3	NO
M58WR064FB60ZB6F	STMicroelectronics	FLASH	INDUSTRIAL	56	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	4K,32K	50 mA	4194304 words	1.8	NO	1.8	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA56,7X8,30	Flash Memories	.75 mm	85 Cel	4MX16	4M	-40 Cel	8,127	YES	TIN SILVER COPPER	BOTTOM	R-PBGA-B56	2 V	1 mm	7.7 mm	Not Qualified	BOTTOM	67108864 bit	1.7 V	SYNCHRONOUS BURST MODE OPERATION POSSIBLE	4	e1			NOR TYPE	.000005 Amp	9 mm	YES	60 ns	1.8	NO
M28W160BTT100GB6	STMicroelectronics	FLASH	INDUSTRIAL	46	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS			1048576 words	2.7			16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.75 mm	85 Cel	1MX16	1M	-40 Cel				BOTTOM	R-PBGA-B46	3.6 V	1 mm	6.37 mm	Not Qualified	TOP	16777216 bit	2.7 V	TOP BOOT BLOCK					NOR TYPE		6.39 mm		100 ns	2.7
M28W800T150GB6T	STMicroelectronics	FLASH	INDUSTRIAL	45	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	4K,32K	20 mA	524288 words	3	NO	1.65/2.2,3	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA45,6X8,30	Flash Memories	.75 mm	85 Cel	512KX16	512K	-40 Cel	8,15	YES	TIN LEAD	BOTTOM	R-PBGA-B45	3.3 V	.835 mm	6.62 mm	Not Qualified	TOP	8388608 bit	2.7 V	TOP BOOT BLOCK		e0			NOR TYPE	.000005 Amp	6.8 mm	YES	150 ns	2.7	NO
M58WR032EB70ZB6	STMicroelectronics	FLASH	INDUSTRIAL	56	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	4K,32K	30 mA	2097152 words	1.8	NO	1.8/2,1.8/3	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA56,7X8,30	Flash Memories	.75 mm	85 Cel	2MX16	2M	-40 Cel	8,63	YES	Tin/Lead (Sn63Pb37)	BOTTOM	R-PBGA-B56	2.2 V	1 mm	7.7 mm	Not Qualified	BOTTOM	33554432 bit	1.7 V		4	e0			NOR TYPE	.000005 Amp	9 mm	YES	70 ns	1.8	NO
M58WR064KL60ZA6E	STMicroelectronics	FLASH	INDUSTRIAL	44	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	4K,32K	60 mA	4194304 words	1.8	NO	1.8	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA44,8X14,20	Flash Memories	.5 mm	85 Cel	4MX16	4M	-40 Cel	8,127	YES		BOTTOM	R-PBGA-B44	2 V	1 mm	5 mm	Not Qualified	BOTTOM	67108864 bit	1.7 V	SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE	4		40	260	NOR TYPE	.00001 Amp	7.5 mm	YES	60 ns	1.8	NO
M28W800T100GB1T	STMicroelectronics	FLASH	COMMERCIAL	45	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	4K,32K	20 mA	524288 words	3.3	NO	3/3.3	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA45,6X8,30	Flash Memories	.75 mm	70 Cel	512KX16	512K	0 Cel	8,15	YES	TIN LEAD	BOTTOM	R-PBGA-B45	3.6 V	.835 mm	6.62 mm	Not Qualified	TOP	8388608 bit	3 V	TOP BOOT BLOCK		e0			NOR TYPE	.000005 Amp	6.8 mm	YES	100 ns	3	NO
M58WR032HT60ZB6E	STMicroelectronics	FLASH	INDUSTRIAL	56	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	4K,32K	50 mA	2097152 words	1.8	NO	1.8,1.8/2	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA56,7X8,30	Flash Memories	.75 mm	85 Cel	2MX16	2M	-40 Cel	8,63	YES		BOTTOM	R-PBGA-B56	2 V	1 mm	7.7 mm	Not Qualified	TOP	33554432 bit	1.7 V	100,000 PROGRAM/ERASE CYCLES; SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE	4		NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.000005 Amp	9 mm	YES	60 ns	1.8	NO
M28W160T120GJ6T	STMicroelectronics	FLASH	INDUSTRIAL	46	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS			1048576 words	3			16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.75 mm	85 Cel	1MX16	1M	-40 Cel				BOTTOM	R-PBGA-B46	3.3 V	.865 mm	6.858 mm	Not Qualified	TOP	16777216 bit	2.7 V	TOP BOOT BLOCK					NOR TYPE		9.616 mm		120 ns	12
M58WR032QT70ZB6F	STMicroelectronics	FLASH	INDUSTRIAL	56	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	4K,32K	45 mA	2097152 words	1.8	NO	1.8,1.8/2	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA56,7X8,30	Flash Memories	.75 mm	85 Cel	2MX16	2M	-40 Cel	8,63	YES		BOTTOM	R-PBGA-B56	2 V	1 mm	9 mm	Not Qualified	TOP	33554432 bit	1.7 V		4		NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.00005 Amp	7.7 mm	YES	70 ns	1.8	NO
M28W160BT85GB6T	STMicroelectronics	FLASH	INDUSTRIAL	46	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	4K,32K	20 mA	1048576 words	3	NO	3/3.3	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA48,6X8,30	Flash Memories	.75 mm	85 Cel	1MX16	1M	-40 Cel	8,31	YES		BOTTOM	R-PBGA-B46	3.6 V	1 mm	6.37 mm	Not Qualified	TOP	16777216 bit	2.7 V	TOP BOOT BLOCK		e0	NOT SPECIFIED	260	NOR TYPE	.000005 Amp	6.39 mm	YES	85 ns	3	NO
M58WR016QB70ZB6E	STMicroelectronics	FLASH	INDUSTRIAL	56	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	4K,32K	45 mA	1048576 words	1.8	NO	1.8,1.8/2	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA56,7X8,30	Flash Memories	.75 mm	85 Cel	1MX16	1M	-40 Cel	8,31	YES		BOTTOM	R-PBGA-B56	2 V	1 mm	9 mm	Not Qualified	BOTTOM	16777216 bit	1.7 V		4		NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.00005 Amp	7.7 mm	YES	70 ns	1.8	NO
M58WR032QB80ZB6	STMicroelectronics	FLASH	INDUSTRIAL	56	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	4K,32K	45 mA	2097152 words	1.8	NO	1.8,1.8/2	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA56,7X8,30	Flash Memories	.75 mm	85 Cel	2MX16	2M	-40 Cel	8,63	YES	TIN LEAD	BOTTOM	R-PBGA-B56	2 V	1 mm	9 mm	Not Qualified	BOTTOM	33554432 bit	1.7 V		4	e0			NOR TYPE	.000005 Amp	7.7 mm	YES	80 ns	1.8	NO
M28W160BTB90GB1T	STMicroelectronics	FLASH	COMMERCIAL	46	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS			1048576 words	2.7			16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.75 mm	70 Cel	1MX16	1M	0 Cel				BOTTOM	R-PBGA-B46	3.6 V	1 mm	6.37 mm	Not Qualified	BOTTOM	16777216 bit	2.7 V	TOP BOOT BLOCK			NOT SPECIFIED	260	NOR TYPE		6.39 mm		90 ns	2.7
M58WR032KL60ZA6U	STMicroelectronics	FLASH	INDUSTRIAL	44	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	4K,32K	60 mA	2097152 words	1.8	NO	1.8	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA44,8X14,20	Flash Memories	.5 mm	85 Cel	2MX16	2M	-40 Cel	8,63	YES		BOTTOM	R-PBGA-B44	2 V	1 mm	5 mm	Not Qualified	BOTTOM	33554432 bit	1.7 V	SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE	4		40	260	NOR TYPE	.00001 Amp	7.5 mm	YES	60 ns	1.8	NO
M28W160T120GJ1T	STMicroelectronics	FLASH	COMMERCIAL	46	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS			1048576 words	3			16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.75 mm	70 Cel	1MX16	1M	0 Cel				BOTTOM	R-PBGA-B46	3.3 V	.865 mm	6.858 mm	Not Qualified	TOP	16777216 bit	2.7 V	TOP BOOT BLOCK					NOR TYPE		9.616 mm		120 ns	12
M58WR064EB70ZB6	STMicroelectronics	FLASH	INDUSTRIAL	56	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	4K,32K	30 mA	4194304 words	1.8	NO	1.8/2,1.8/3	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA56,7X8,30	Flash Memories	.75 mm	85 Cel	4MX16	4M	-40 Cel	8,127	YES	Tin/Lead (Sn63Pb37)	BOTTOM	R-PBGA-B56	2.2 V	1 mm	7.7 mm	Not Qualified	BOTTOM	67108864 bit	1.7 V	SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE	4	e0			NOR TYPE	.000005 Amp	9 mm	YES	70 ns	1.8	NO
M58WR032KL70ZA6U	STMicroelectronics	FLASH	INDUSTRIAL	44	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	4K,32K	60 mA	2097152 words	1.8	NO	1.8	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA44,8X14,20	Flash Memories	.5 mm	85 Cel	2MX16	2M	-40 Cel	8,63	YES		BOTTOM	R-PBGA-B44	2 V	1 mm	5 mm	Not Qualified	BOTTOM	33554432 bit	1.7 V	SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE	4		40	260	NOR TYPE	.00001 Amp	7.5 mm	YES	70 ns	1.8	NO
M28W160BB100GB6	STMicroelectronics	FLASH	INDUSTRIAL	46	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	4K,32K	20 mA	1048576 words	3	NO	1.8/2.5,3/3.3	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA46,6X8,30	Flash Memories	.75 mm	85 Cel	1MX16	1M	-40 Cel	8,31	YES	TIN LEAD	BOTTOM	R-PBGA-B46	3.6 V	1 mm	6.37 mm	Not Qualified	BOTTOM	16777216 bit	2.7 V	BOTTOM BOOT BLOCK		e0			NOR TYPE	.000005 Amp	6.39 mm	YES	100 ns	3	NO
M58WR064FT60ZB6T	STMicroelectronics	FLASH	INDUSTRIAL	56	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	4K,32K	50 mA	4194304 words	1.8	NO	1.8	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA56,7X8,30	Flash Memories	.75 mm	85 Cel	4MX16	4M	-40 Cel	8,127	YES	TIN LEAD	BOTTOM	R-PBGA-B56	2 V	1 mm	7.7 mm	Not Qualified	TOP	67108864 bit	1.7 V	SYNCHRONOUS BURST MODE OPERATION POSSIBLE	4	e0			NOR TYPE	.000005 Amp	9 mm	YES	60 ns	1.8	NO
M58WR128FB60ZB6F	STMicroelectronics	FLASH	INDUSTRIAL	56	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	4K,32K	30 mA	8388608 words	1.8	NO	1.8	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA56,7X8,30	Flash Memories	.75 mm	85 Cel	8MX16	8M	-40 Cel	8, 255	YES	TIN SILVER COPPER	BOTTOM	R-PBGA-B56	2 V	1 mm	7.7 mm	Not Qualified	BOTTOM	134217728 bit	1.7 V	SYNCHRONOUS BURST MODE OPERATION POSSIBLE	4	e1			NOR TYPE	.000005 Amp	9 mm	YES	60 ns	1.8	NO
M58WR064HT60ZB6E	STMicroelectronics	FLASH	INDUSTRIAL	56	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	4K,32K	50 mA	4194304 words	1.8	NO	1.8,1.8/2	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA56,7X8,30	Flash Memories	.75 mm	85 Cel	4MX16	4M	-40 Cel	8,127	YES		BOTTOM	R-PBGA-B56	2 V	1 mm	7.7 mm	Not Qualified	TOP	67108864 bit	1.7 V	SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE	4		NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.000005 Amp	9 mm	YES	60 ns	1.8	NO
M58WR128ET10ZB6	STMicroelectronics	FLASH	INDUSTRIAL	60	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	4K,32K	30 mA	8388608 words	1.8	NO	1.8/2,1.8/3	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA60,9X10,30	Flash Memories	.75 mm	85 Cel	8MX16	8M	-40 Cel	8, 255	YES	Tin/Lead (Sn63Pb37)	BOTTOM	R-PBGA-B60	2.2 V	1 mm	12 mm	Not Qualified	TOP	134217728 bit	1.65 V	SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE	4	e0			NOR TYPE	.000005 Amp	12.5 mm	YES	100 ns	1.8	NO
M58WR128FB80ZB6	STMicroelectronics	FLASH	INDUSTRIAL	56	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	4K,32K	30 mA	8388608 words	1.8	NO	1.8	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA56,7X8,30	Flash Memories	.75 mm	85 Cel	8MX16	8M	-40 Cel	8, 255	YES	TIN LEAD	BOTTOM	R-PBGA-B56	2 V	1 mm	7.7 mm	Not Qualified	BOTTOM	134217728 bit	1.7 V	SYNCHRONOUS BURST MODE OPERATION POSSIBLE	4	e0			NOR TYPE	.000005 Amp	9 mm	YES	80 ns	1.8	NO
M58WR032FB60ZB6E	STMicroelectronics	FLASH	INDUSTRIAL	56	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	4K,32K	45 mA	2097152 words	1.8	NO	1.8,1.8/2	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA56,7X8,30	Flash Memories	.75 mm	85 Cel	2MX16	2M	-40 Cel	8,63	YES	TIN SILVER COPPER	BOTTOM	R-PBGA-B56	2 V	1 mm	7.7 mm	Not Qualified	BOTTOM	33554432 bit	1.7 V	SYNCHRONOUS BURST MODE OPERATION POSSIBLE	4	e1			NOR TYPE	.000005 Amp	9 mm	YES	60 ns	1.8	NO
M58WR032ET100ZB6	STMicroelectronics	FLASH	INDUSTRIAL	56	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	4K,32K	30 mA	2097152 words	1.8	NO	1.8/2,1.8/3	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA56,7X8,30	Flash Memories	.75 mm	85 Cel	2MX16	2M	-40 Cel	8,63	YES	Tin/Lead (Sn63Pb37)	BOTTOM	R-PBGA-B56	2.2 V	1 mm	7.7 mm	Not Qualified	TOP	33554432 bit	1.65 V		4	e0			NOR TYPE	.00005 Amp	9 mm	YES	100 ns	1.8	NO
M58WR128EB70ZB6T	STMicroelectronics	FLASH	INDUSTRIAL	60	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	4K,32K	30 mA	8388608 words	1.8	NO	1.8/2,1.8/3	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA60,9X10,30	Flash Memories	.75 mm	85 Cel	8MX16	8M	-40 Cel	8, 255	YES	Tin/Lead (Sn63Pb37)	BOTTOM	R-PBGA-B60	2.2 V	1 mm	12 mm	Not Qualified	BOTTOM	134217728 bit	1.7 V	SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE	4	e0			NOR TYPE	.000005 Amp	12.5 mm	YES	70 ns	1.8	NO
M58WR128FB80ZB6T	STMicroelectronics	FLASH	INDUSTRIAL	56	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	4K,32K	30 mA	8388608 words	1.8	NO	1.8	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA56,7X8,30	Flash Memories	.75 mm	85 Cel	8MX16	8M	-40 Cel	8, 255	YES	TIN LEAD	BOTTOM	R-PBGA-B56	2 V	1 mm	7.7 mm	Not Qualified	BOTTOM	134217728 bit	1.7 V	SYNCHRONOUS BURST MODE OPERATION POSSIBLE	4	e0			NOR TYPE	.000005 Amp	9 mm	YES	80 ns	1.8	NO
M58WR016KL70ZA6E	STMicroelectronics	FLASH	INDUSTRIAL	44	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	4K,32K	60 mA	1048576 words	1.8	NO	1.8	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA44,8X14,20	Flash Memories	.5 mm	85 Cel	1MX16	1M	-40 Cel	8,31	YES		BOTTOM	R-PBGA-B44	2 V	1 mm	5 mm	Not Qualified	BOTTOM	16777216 bit	1.7 V	SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE	4		40	260	NOR TYPE	.00001 Amp	7.5 mm	YES	70 ns	1.8	NO
M28W160BB100GB1	STMicroelectronics	FLASH	COMMERCIAL	46	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	4K,32K	20 mA	1048576 words	3	NO	1.8/2.5,3/3.3	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA46,6X8,30	Flash Memories	.75 mm	70 Cel	1MX16	1M	0 Cel	8,31	YES	TIN LEAD	BOTTOM	R-PBGA-B46	3.6 V	1 mm	6.37 mm	Not Qualified	BOTTOM	16777216 bit	2.7 V	BOTTOM BOOT BLOCK		e0			NOR TYPE	.000005 Amp	6.39 mm	YES	100 ns	3	NO
M58LR128FB95ZB6E	STMicroelectronics	FLASH	INDUSTRIAL	56	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	16K,64K	47 mA	8388608 words	1.8	NO	1.8	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA56,7X8,30	Flash Memories	.75 mm	85 Cel	8MX16	8M	-40 Cel	4,127	YES	TIN SILVER COPPER	BOTTOM	R-PBGA-B56	2 V	1 mm	7.7 mm	Not Qualified	BOTTOM	134217728 bit	1.7 V	SYNCHRONOUS BURST MODE OPERATION POSSIBLE	4	e1			NOR TYPE	.000005 Amp	9 mm	YES	95 ns	1.8	NO
M58LW128H115ZB1E	STMicroelectronics	FLASH	COMMERCIAL	56	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	64K	30 mA	8388608 words	3	NO	1.8/3.6,3/3.3	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA56,7X8,30	Flash Memories	.75 mm	70 Cel	8MX16	8M	0 Cel	128	YES		BOTTOM	R-PBGA-B56	3.6 V	1 mm	9 mm	Not Qualified		134217728 bit	2.7 V	SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE	8		NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.00004 Amp	11 mm	YES	115 ns	3	NO
M58LW128H115ZB6	STMicroelectronics	FLASH	INDUSTRIAL	56	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	64K	30 mA	8388608 words	3	NO	1.8/3.6,3/3.3	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA56,7X8,30	Flash Memories	.75 mm	85 Cel	8MX16	8M	-40 Cel	128	YES	TIN LEAD	BOTTOM	R-PBGA-B56	3.6 V	1 mm	9 mm	Not Qualified		134217728 bit	2.7 V	SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE	8	e0			NOR TYPE	.00004 Amp	11 mm	YES	115 ns	3	NO
M58LR128GU85ZB5E	STMicroelectronics	FLASH	OTHER	44	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	16K,64K	55 mA	8388608 words	1.8	NO	1.8	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA44,8X14,20	Flash Memories	.5 mm	85 Cel	8MX16	8M	-25 Cel	4,127	YES		BOTTOM	R-PBGA-B44	2 V	1 mm	9 mm	Not Qualified	TOP	134217728 bit	1.7 V						NOR TYPE	.000005 Amp	7.7 mm	YES	85 ns	1.8	NO
M58LR256GU85ZC5E	STMicroelectronics	FLASH	COMMERCIAL EXTENDED	44	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS			16777216 words	1.8			16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.5 mm	85 Cel	16MX16	16M	-25 Cel				BOTTOM	R-PBGA-B44	2 V	1 mm	8 mm	Not Qualified	TOP	268435456 bit	1.7 V						NOR TYPE		10 mm		90 ns	1.8
M58LR128GT85ZB5E	STMicroelectronics	FLASH	OTHER	56	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	16K,64K	52 mA	8388608 words	1.8	NO	1.8	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA56,7X8,30	Flash Memories	.75 mm	85 Cel	8MX16	8M	-25 Cel	4,127	YES		BOTTOM	R-PBGA-B56	2 V	1 mm	7.7 mm	Not Qualified	TOP	134217728 bit	1.7 V		8		NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.000005 Amp	9 mm	YES	85 ns	1.8	NO
M58LR256GL90ZB5U	STMicroelectronics	FLASH	COMMERCIAL EXTENDED	44	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS			16777216 words	1.8			16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.5 mm	85 Cel	16MX16	16M	-25 Cel				BOTTOM	R-PBGA-B44	2 V	1 mm	9 mm	Not Qualified	BOTTOM	268435456 bit	1.7 V						NOR TYPE		7.7 mm		85 ns	1.8
M58LR128GB85ZB5T	STMicroelectronics	FLASH	OTHER	56	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	16K,64K	52 mA	8388608 words	1.8	NO	1.8	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA56,7X8,30	Flash Memories	.75 mm	85 Cel	8MX16	8M	-25 Cel	4,127	YES	TIN LEAD	BOTTOM	R-PBGA-B56	2 V	1 mm	7.7 mm	Not Qualified	BOTTOM	134217728 bit	1.7 V		8	e0			NOR TYPE	.000005 Amp	9 mm	YES	85 ns	1.8	NO
M58LR128GL85ZB5E	STMicroelectronics	FLASH	OTHER	44	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	16K,64K	55 mA	8388608 words	1.8	NO	1.8	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA44,8X14,20	Flash Memories	.5 mm	85 Cel	8MX16	8M	-25 Cel	4,127	YES		BOTTOM	R-PBGA-B44	2 V	1 mm	9 mm	Not Qualified	BOTTOM	134217728 bit	1.7 V						NOR TYPE	.000005 Amp	7.7 mm	YES	85 ns	1.8	NO
M58LT128HT85ZB5F	STMicroelectronics	FLASH	COMMERCIAL EXTENDED	56	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	16K,64K	53 mA	8388608 words	1.8	NO	1.8,3/3.3	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA56,7X8,30	Flash Memories	.75 mm	85 Cel	8MX16	8M	-25 Cel	4,127	YES		BOTTOM	R-PBGA-B56	2 V	1 mm	7.7 mm	Not Qualified	TOP	134217728 bit	1.7 V	SYNCHRONOUS BURST MODE OPERATION POSSIBLE	4		NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.000075 Amp	9 mm	YES	85 ns	1.8	NO

Flash Memory

Flash memory is a type of non-volatile computer memory that is commonly used in digital devices such as USB drives, solid-state drives, and digital cameras. It is a type of EEPROM (Electrically Erasable Programmable Read-Only Memory) that allows data to be erased and reprogrammed in blocks instead of one byte at a time. Flash memory uses a floating gate transistor to store data, which allows it to retain information even when the power is turned off.

Flash memory is widely used in digital devices because of its high capacity, small size, and fast access times. It is also more durable than other types of memory, such as hard disk drives, because it has no moving parts. This makes it ideal for use in portable devices that may be subject to physical shock or vibration.

There are two types of flash memory: NOR flash and NAND flash. NOR flash is faster than NAND flash, but it has lower density and higher cost per bit. NOR flash is typically used for code storage, such as firmware or boot code, because it provides faster access times. NAND flash has higher density and lower cost per bit, which makes it ideal for data storage applications.

Flash memory has a limited lifespan, as it can only be erased and reprogrammed a limited number of times. This is because the process of erasing and reprogramming the memory causes wear and tear on the floating gate transistor. However, modern flash memory devices have a sophisticated wear-leveling algorithm that distributes writes evenly across the memory, which extends the lifespan of the device.