VFBGA Flash Memory 2,400+

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Screening Level	Terminal Form	Parallel or Serial	Operating Mode	Sector Size (Words)	Maximum Supply Current	No. of Words	Nominal Supply Voltage / Vsup (V)	Toggle Bit	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Alternate Memory Width	Sub-Category	Minimum Data Retention Time	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	No. of Sectors/Size	Command User Interface	Terminal Finish	Ready or Busy	Terminal Position	Write Protection	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Endurance	Maximum Clock Frequency (fCLK)	Width	Qualification	Boot Block	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	Page Size (words)	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Type	Maximum Standby Current	Length	Common Flash Interface	Maximum Access Time	Programming Voltage (V)	Data Polling
MTFC8GAKAJCN-4MIT	Micron Technology	FLASH CARD	INDUSTRIAL	153	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS			8589934592 words		NO		8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA153,14X14,20				.5 mm	85 Cel		8GX8	8G	-40 Cel		NO	TIN SILVER COPPER		BOTTOM		R-PBGA-B153		3.6 V	1 mm		52 MHz	11.5 mm			68719476736 bit	2.7 V			e1	30	260	MLC NAND TYPE		13 mm				NO
SDINBDG4-8G-XI1	Western Digital	FLASH CARD		153	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS			8589934592 words	3.3			8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA153,14X14,20			1	.5 mm	85 Cel		8GX8	8G	-40 Cel			TIN SILVER COPPER NICKEL GERMANIUM		BOTTOM		R-PBGA-B153		3.6 V	.8 mm	3000 Write/Erase Cycles	200 MHz	11.5 mm			68719476736 bit	2.7 V						MLC NAND TYPE		13 mm			3.3
SDINBDG4-8G-I1	Western Digital	FLASH CARD		153	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS			8589934592 words	3.3			8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA153,14X14,20			1	.5 mm	85 Cel		8GX8	8G	-25 Cel					BOTTOM		R-PBGA-B153		3.6 V	.8 mm	3000 Write/Erase Cycles	200 MHz	11.5 mm			68719476736 bit	2.7 V						MLC NAND TYPE		13 mm			3.3
MTFC4GACAJCN-4MIT	Micron Technology	FLASH CARD	INDUSTRIAL	153	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS			4294967296 words		NO		8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA153,14X14,20				.5 mm	85 Cel		4GX8	4G	-40 Cel		NO	TIN SILVER COPPER		BOTTOM		R-PBGA-B153		3.6 V	1 mm		52 MHz	11.5 mm			34359738368 bit	2.7 V				30	260	MLC NAND TYPE		13 mm				NO
MTFC8GAKAJCN-4MITTR	Micron Technology	FLASH CARD	INDUSTRIAL	153	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS			8589934592 words		NO		8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA153,14X14,20				.5 mm	85 Cel		8GX8	8G	-40 Cel		NO	TIN SILVER COPPER		BOTTOM		R-PBGA-B153		3.6 V	1 mm		52 MHz	11.5 mm			68719476736 bit	2.7 V			e1	30	260	MLC NAND TYPE		13 mm				NO
MTFC4GACAJCN-4MITTR	Micron Technology	FLASH CARD	INDUSTRIAL	153	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS			4294967296 words		NO		8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA153,14X14,20				.5 mm	85 Cel		4GX8	4G	-40 Cel		NO	Tin/Silver/Copper (Sn/Ag/Cu)		BOTTOM		R-PBGA-B153		3.6 V	1 mm		52 MHz	11.5 mm			34359738368 bit	2.7 V			e1	30	260	MLC NAND TYPE		13 mm				NO
IS21ES04G-JCLI	Integrated Silicon Solution	FLASH	INDUSTRIAL	153	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS			4294967296 words	3.3			8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH					.5 mm	85 Cel		4GX8	4G	-40 Cel			TIN SILVER COPPER		BOTTOM		R-PBGA-B153	3	3.6 V	1 mm			11.5 mm			34359738368 bit	2.7 V			e1	10	260			13 mm			3.3
IS21ES08G-JCLI	Integrated Silicon Solution	FLASH	INDUSTRIAL	153	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS			8589934592 words	3.3	NO		8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA153,14X14,20	1			.5 mm	85 Cel	3-STATE	8GX8	8G	-40 Cel		NO	TIN SILVER COPPER		BOTTOM		R-PBGA-B153	3	3.6 V	1 mm		200 MHz	11.5 mm			68719476736 bit	2.7 V			e1	10	260	MLC NAND TYPE		13 mm			3.3	NO
SDINBDG4-8G	Western Digital	FLASH CARD	OTHER	153	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS			8589934592 words	3.3			8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA153,14X14,20				.5 mm	85 Cel		8GX8	8G	-25 Cel					BOTTOM		R-PBGA-B153		3.6 V	.8 mm	3000 Write/Erase Cycles		11 mm			68719476736 bit	2.7 V						MLC NAND TYPE		13.5 mm
SDINBDG4-8G-XI2	Western Digital	FLASH CARD	INDUSTRIAL		VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL					8589934592 words				8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH						85 Cel		8GX8	8G	-40 Cel					BOTTOM				3.6 V	.8 mm	3000 Write/Erase Cycles		11.5 mm			68719476736 bit	2.7 V						MLC NAND TYPE		13 mm
SDINBDG4-16G-I1	Western Digital	FLASH CARD		153	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS			17179869184 words	3.3			8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA153,14X14,20			1	.5 mm	85 Cel		16GX8	16G	-25 Cel					BOTTOM		R-PBGA-B153		3.6 V	.8 mm	3000 Write/Erase Cycles	200 MHz	11.5 mm			137438953472 bit	2.7 V						MLC NAND TYPE		13 mm			3.3
MTFC4GACAJCN-1MWT	Micron Technology	FLASH CARD	OTHER	153	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS			4294967296 words	3.3	NO		8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA153,14X14,20				.5 mm	85 Cel	OPEN-DRAIN	4GX8	4G	-25 Cel		NO	TIN SILVER COPPER		BOTTOM		R-PBGA-B153		3.6 V	1 mm			11.5 mm			34359738368 bit	2.7 V	ALSO AVAILABE WITH TAPE AND REEL			30	260	MLC NAND TYPE		13 mm				NO
SDINBDG4-8G-I2	Western Digital	FLASH CARD	OTHER		VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL					8589934592 words				8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH						85 Cel		8GX8	8G	-25 Cel					BOTTOM				3.6 V	.8 mm	3000 Write/Erase Cycles		11.5 mm			68719476736 bit	2.7 V						MLC NAND TYPE		13 mm
SDINBDG4-16G-XI1	Western Digital	FLASH CARD		153	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS			17179869184 words	3.3			8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA153,14X14,20			1	.5 mm	85 Cel		16GX8	16G	-40 Cel					BOTTOM		R-PBGA-B153		3.6 V	.8 mm	3000 Write/Erase Cycles	200 MHz	11.5 mm			137438953472 bit	2.7 V						MLC NAND TYPE		13 mm			3.3
EMMC16G-TB29-PZ90	Kingston Technology Company	FLASH CARD		153	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS			17179869184 words	3.3	NO		8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA153,14X14,20				.5 mm	85 Cel		16GX8	16G	-25 Cel		YES			BOTTOM		R-PBGA-B153		3.6 V	.8 mm		200 MHz	11.5 mm			137438953472 bit	2.7 V						TLC NAND TYPE		13 mm			3.3	NO
KLM8G1GETF-B0410	Samsung	FLASH	OTHER	153	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS			8589934592 words	1.8			8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH					.5 mm	85 Cel		8GX8	8G	-25 Cel					BOTTOM		R-PBGA-B153		1.95 V	.8 mm		200 MHz	11.5 mm			68719476736 bit	1.7 V	ALSO OPERATES @ 3V SUP NOM					MLC NAND TYPE		13 mm			1.8
SDINBDG4-8G-ZA	Western Digital	FLASH CARD	INDUSTRIAL	153	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	SERIAL	SYNCHRONOUS			8589934592 words	3.3			8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA153,14X14,20			15	.5 mm	105 Cel		8GX8	8G	-40 Cel					BOTTOM		R-PBGA-B153		3.6 V	.8 mm			11.5 mm			68719476736 bit	2.7 V						MLC NAND TYPE		13 mm
IS21ES04G-JCLI-TR	Integrated Silicon Solution	FLASH	INDUSTRIAL	153	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS			4294967296 words	3.3			8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH					.5 mm	85 Cel		4GX8	4G	-40 Cel					BOTTOM		R-PBGA-B153		3.6 V	1 mm			11.5 mm			34359738368 bit	2.7 V				NOT SPECIFIED	NOT SPECIFIED			13 mm			3.3
S29AL016J70BFI020	Infineon Technologies	FLASH	INDUSTRIAL	48	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	30 mA	1048576 words	3	YES	3/3.3	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA48,6X8,32	8	Flash Memories		.8 mm	85 Cel		1MX16	1M	-40 Cel	1,2,1,31	YES	TIN SILVER COPPER	YES	BOTTOM		R-PBGA-B48	3	3.6 V	1 mm			6.15 mm	Not Qualified	BOTTOM	16777216 bit	2.7 V	TOP BOOT BLOCK		e1	40	260	NOR TYPE	.000005 Amp	8.15 mm	YES	70 ns	3	YES
SDINBDG4-32G-I1	Western Digital	FLASH CARD		153	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS			34359738368 words	3.3			8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA153,14X14,20			1	.5 mm	85 Cel		32GX8	32G	-25 Cel					BOTTOM		R-PBGA-B153		3.6 V	1 mm	3000 Write/Erase Cycles	200 MHz	11.5 mm			274877906944 bit	2.7 V						MLC NAND TYPE		13 mm			3.3
MTFC32GAZAQHD-IT	Micron Technology	FLASH CARD		153	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS			34359738368 words				8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA153,14X14,20			1	.5 mm	95 Cel		32GX8	32G	-40 Cel			TIN SILVER COPPER		BOTTOM		R-PBGA-B153		3.6 V	.9 mm			11.5 mm			274877906944 bit	2.7 V			e1	30	260	NAND TYPE		13 mm
THGBMTG5D1LBAIL	Kioxia Holdings	FLASH CARD		153	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL		SYNCHRONOUS		30 mA	4294967296 words	3			8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA153,14X14,20				.5 mm	85 Cel		4MX8	4M	-25 Cel					BOTTOM		R-PBGA-B153		3.6 V	.8 mm		200 MHz	11 mm			34359738368 bit	2.7 V						NAND TYPE		13 mm			3
MTFC8GAKAJCN-1MWT	Micron Technology	FLASH CARD	OTHER	153	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS			8589934592 words	3.3	NO		8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA153,14X14,20				.5 mm	85 Cel	OPEN-DRAIN	8GX8	8G	-25 Cel		NO			BOTTOM		R-PBGA-B153		3.6 V	1 mm			11.5 mm			68719476736 bit	2.7 V	ALSO AVAILABE WITH TAPE AND REEL			NOT SPECIFIED	NOT SPECIFIED	MLC NAND TYPE		13 mm				NO
S29WS128P0SBFW000	Cypress Semiconductor	FLASH	OTHER	84	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	16K,64K	80 mA	8388608 words	1.8	YES	1.8	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA84,10X12,32		Flash Memories		.8 mm	85 Cel		8MX16	8M	-25 Cel	8,126	YES	Tin/Silver/Copper (Sn96.5Ag3.0Cu0.5)	YES	BOTTOM		R-PBGA-B84	3	1.95 V	1 mm			8 mm	Not Qualified	BOTTOM/TOP	134217728 bit	1.7 V	SYNCHRONOUS BURST MODE OPERATION POSSIBLE	8	e1	40	260	NOR TYPE	.000005 Amp	11.6 mm	YES	80 ns	1.8	YES
MT29F2G08ABAEAH4-IT:E	Micron Technology	FLASH	INDUSTRIAL	63	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	128K	35 mA	268435456 words	3.3	NO	3/3.3	8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA63,10X12,32		Flash Memories		.8 mm	85 Cel		256MX8	256M	-40 Cel	2K	YES	Tin/Silver/Copper (Sn/Ag/Cu)	YES	BOTTOM		R-PBGA-B63		3.6 V	1 mm			9 mm	Not Qualified		2147483648 bit	2.7 V		2K	e1	30	260	SLC NAND TYPE	.0001 Amp	11 mm		25 ns	2.7	NO
IS21ES08G-JCLI-TR	Integrated Silicon Solution	FLASH	INDUSTRIAL	153	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS			8589934592 words	3.3			8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH					.5 mm	85 Cel		8GX8	8G	-40 Cel					BOTTOM		R-PBGA-B153		3.6 V	1 mm			11.5 mm			68719476736 bit	2.7 V				NOT SPECIFIED	NOT SPECIFIED			13 mm			3.3
KLMAG1JETD-B0410	Samsung	FLASH	OTHER	153	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS			17179869184 words	1.8			8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH					.5 mm	85 Cel		16GX8	16G	-25 Cel					BOTTOM		R-PBGA-B153		1.95 V	.8 mm		200 MHz	11.5 mm			137438953472 bit	1.7 V	ALSO OPERATES @ 3V SUP NOM					MLC NAND TYPE		13 mm			1.8
EMMC04G-M627-X03U	Kingston Technology Company	FLASH CARD	OTHER	153	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL		SYNCHRONOUS			4294967296 words	3.3			8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA153,14X14,20				.5 mm	85 Cel	OPEN-DRAIN	4GX8	4G	-25 Cel					BOTTOM		R-PBGA-B153		3.6 V	1 mm		200 MHz	11.5 mm			34359738368 bit	2.7 V						MLC NAND TYPE		13 mm			3.3
S34ML01G200BHI000	Cypress Semiconductor	FLASH	INDUSTRIAL	63	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	128K	30 mA	134217728 words	3.3	NO	3/3.3	8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA63,10X12,32		Flash Memories		.8 mm	85 Cel		128MX8	128M	-40 Cel	1K	YES		YES	BOTTOM		R-PBGA-B63	3	3.6 V	1 mm			9 mm	Not Qualified		1073741824 bit	2.7 V		2K			260	SLC NAND TYPE	.00005 Amp	11 mm		25 ns	3	NO
MTFC32GAZAQHD-WT	Micron Technology	FLASH CARD		153	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS			34359738368 words				8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA153,14X14,20			1	.5 mm	85 Cel		32GX8	32G	-25 Cel					BOTTOM		R-PBGA-B153		3.6 V	.9 mm			11.5 mm			274877906944 bit	2.7 V						NAND TYPE		13 mm
IS21ES08GA-JCLI	Integrated Silicon Solution	FLASH CARD		153	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS			8589934592 words	3.3	NO		8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA153,14X14,20				.5 mm	85 Cel		8GX8	8G	-40 Cel		YES	TIN SILVER COPPER		BOTTOM		R-PBGA-B153	3	3.6 V	1 mm		200 MHz	11.5 mm			68719476736 bit	2.7 V			e1	30	260	NAND TYPE		13 mm			3.3	NO
MTFC2GMDEA-0MWTA	Micron Technology	FLASH	OTHER	153	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS			2147483648 words	3.3			8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH					.5 mm	85 Cel		2GX8	2G	-25 Cel			TIN SILVER COPPER NICKEL		BOTTOM		R-PBGA-B153		3.6 V	.8 mm		52 MHz	11.5 mm			17179869184 bit	2.7 V	ALSO HAVING MMC CONTROLLER		e2	30	260			13 mm			3.3
SDINBDG4-16G	Western Digital	FLASH CARD	OTHER	153	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS			17179869184 words	3.3			8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA153,14X14,20				.5 mm	85 Cel		16GX8	16G	-25 Cel					BOTTOM		R-PBGA-B153		3.6 V	.8 mm	3000 Write/Erase Cycles		11 mm			137438953472 bit	2.7 V						MLC NAND TYPE		13.5 mm
MX30LF2G18AC-XKI	Macronix	FLASH	INDUSTRIAL	63	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS			268435456 words	3			8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH					.8 mm	85 Cel		256MX8	256M	-40 Cel					BOTTOM		R-PBGA-B63		3.6 V	1 mm			9 mm			2147483648 bit	2.7 V				NOT SPECIFIED	NOT SPECIFIED	SLC NAND TYPE		11 mm			3
MTFC32GAZAQHD-AAT	Micron Technology	FLASH CARD	INDUSTRIAL	153	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	PARALLEL	SYNCHRONOUS			34359738368 words	1.8			8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA153,14X14,20				.5 mm	105 Cel		32GX8	32G	-40 Cel					BOTTOM		R-PBGA-B153		1.95 V	.9 mm		200 MHz	11.5 mm			274877906944 bit	1.7 V				30	260	NAND TYPE		13 mm			1.8
SDINBDG4-32G-XI1	Western Digital	FLASH CARD		153	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS			34359738368 words	3.3			8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA153,14X14,20			1	.5 mm	85 Cel		32GX8	32G	-40 Cel					BOTTOM		R-PBGA-B153		3.6 V	1 mm	3000 Write/Erase Cycles	200 MHz	11.5 mm			274877906944 bit	2.7 V						MLC NAND TYPE		13 mm			3.3
MT29F4G08ABADAH4-IT:D	Micron Technology	FLASH	INDUSTRIAL	63	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	128K	35 mA	536870912 words	3.3	NO	3/3.3	8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA63,10X12,32		Flash Memories		.8 mm	85 Cel		512MX8	512M	-40 Cel	4K	YES		YES	BOTTOM		R-PBGA-B63		3.6 V	1 mm			9 mm	Not Qualified		4294967296 bit	2.7 V		2K		30	260	SLC NAND TYPE	.0001 Amp	11 mm		25 ns		NO
S29GL064S70BHI040	Infineon Technologies	FLASH	INDUSTRIAL	48	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	8K,64K	80 mA	4194304 words	3	YES		16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA48,6X8,32	8		20	.8 mm	85 Cel	3-STATE	4MX16	4M	-40 Cel	8,127		TIN SILVER COPPER	YES	BOTTOM		R-PBGA-B48	3	3.6 V	1 mm	100000 Write/Erase Cycles		6.15 mm		BOTTOM	67108864 bit	2.7 V		8/16	e1			NOR TYPE	.0001 Amp	8.15 mm		70 ns	3	YES
MX25R6435FBDIL0	Macronix	FLASH	INDUSTRIAL	22	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS			16777216 words	1.8			4	GRID ARRAY, VERY THIN PROFILE, FINE PITCH		2			.4 mm	85 Cel		16MX4	16M	-40 Cel			TIN SILVER COPPER		BOTTOM		R-PBGA-B22	3	3.6 V	.52 mm		33 MHz				67108864 bit	1.65 V	ALSO IT CAN BE CONFIGURED AS 64M X 1 BIT		e1								3
SDINBDG4-8G-XI1Q	Western Digital	FLASH CARD		153	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS			8589934592 words	3.3			8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA153,14X14,20			1	.5 mm	85 Cel		8GX8	8G	-40 Cel					BOTTOM		R-PBGA-B153		3.6 V	.8 mm	3000 Write/Erase Cycles	200 MHz	11.5 mm			68719476736 bit	2.7 V						MLC NAND TYPE		13 mm			3.3
EMMC04G-W627-M06U	Kingston Technology Company	FLASH CARD		153	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS		85.7 mA	4294967296 words	3.3			8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA153,14X14,20				.5 mm	85 Cel	OPEN-DRAIN	4GX8	4G	-40 Cel					BOTTOM	HARDWARE	R-PBGA-B153		3.6 V	.8 mm		200 MHz	11.5 mm			34359738368 bit	2.7 V						MLC NAND TYPE	.00013 Amp	13 mm			3.3
SDINBDG4-32G	Western Digital	FLASH CARD	OTHER	153	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS			34359738368 words	3.3			8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA153,14X14,20				.5 mm	85 Cel		32GX8	32G	-25 Cel					BOTTOM		R-PBGA-B153		3.6 V	1 mm	3000 Write/Erase Cycles		11 mm			274877906944 bit	2.7 V						MLC NAND TYPE		13.5 mm
SDINBDG4-16G-XA	Western Digital	FLASH CARD	INDUSTRIAL	153	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	SERIAL	SYNCHRONOUS			17179869184 words	3.3			8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA153,14X14,20			15	.5 mm	85 Cel		16GX8	16G	-40 Cel					BOTTOM		R-PBGA-B153		3.6 V	.8 mm			11.5 mm			137438953472 bit	2.7 V						MLC NAND TYPE		13 mm
S29WS256P0PBFW000	Infineon Technologies	FLASH	OTHER	84	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	16K,64K	80 mA	16777216 words	1.8	YES	1.8	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA84,10X12,32		Flash Memories		.8 mm	85 Cel		16MX16	16M	-25 Cel	8,254	YES	TIN SILVER COPPER	YES	BOTTOM		R-PBGA-B84	3	1.95 V	1 mm			8 mm	Not Qualified	BOTTOM/TOP	268435456 bit	1.7 V	SYNCHRONOUS BURST MODE OPERATION POSSIBLE	8	e1	40	260	NOR TYPE	.000005 Amp	11.6 mm	YES	80 ns	1.8	YES
MTFC8GAKAJCN-1MWTTR	Micron Technology	FLASH CARD	COMMERCIAL EXTENDED	153	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS			8589934592 words				8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA153,14X14,20				.5 mm	85 Cel	OPEN-DRAIN	8GX8	8G	-25 Cel					BOTTOM		R-PBGA-B153		3.6 V	1 mm		52 MHz	11.5 mm			68719476736 bit	2.7 V				30	260	MLC NAND TYPE		13 mm
SDINBDG4-16G-XI2	Western Digital	FLASH CARD	INDUSTRIAL	153	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS			17179869184 words	3.3			8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA153,14X14,20				.5 mm	85 Cel		16GX8	16G	-40 Cel					BOTTOM		R-PBGA-B153		3.6 V	.8 mm	3000 Write/Erase Cycles		11 mm			137438953472 bit	2.7 V						MLC NAND TYPE		13.5 mm
MT29F2G08ABAEAH4-IT:ETR	Micron Technology	FLASH	INDUSTRIAL	63	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS			268435456 words	3.3			8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH					.8 mm	85 Cel		256MX8	256M	-40 Cel			TIN SILVER COPPER		BOTTOM		R-PBGA-B63		3.6 V	1 mm			9 mm			2147483648 bit	2.7 V			e1	30	260	SLC NAND TYPE		11 mm			2.7
EMMC16G-IB29-PZ90	Kingston Technology Company	FLASH CARD		153	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS			17179869184 words	3.3	NO		8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA153,14X14,20				.5 mm	85 Cel		16GX8	16G	-40 Cel		NO			BOTTOM		R-PBGA-B153		3.6 V	.8 mm	3000 Write/Erase Cycles	200 MHz	11.5 mm			137438953472 bit	2.7 V						TLC NAND TYPE		13 mm			3.3	NO

Flash Memory

Flash memory is a type of non-volatile computer memory that is commonly used in digital devices such as USB drives, solid-state drives, and digital cameras. It is a type of EEPROM (Electrically Erasable Programmable Read-Only Memory) that allows data to be erased and reprogrammed in blocks instead of one byte at a time. Flash memory uses a floating gate transistor to store data, which allows it to retain information even when the power is turned off.

Flash memory is widely used in digital devices because of its high capacity, small size, and fast access times. It is also more durable than other types of memory, such as hard disk drives, because it has no moving parts. This makes it ideal for use in portable devices that may be subject to physical shock or vibration.

There are two types of flash memory: NOR flash and NAND flash. NOR flash is faster than NAND flash, but it has lower density and higher cost per bit. NOR flash is typically used for code storage, such as firmware or boot code, because it provides faster access times. NAND flash has higher density and lower cost per bit, which makes it ideal for data storage applications.

Flash memory has a limited lifespan, as it can only be erased and reprogrammed a limited number of times. This is because the process of erasing and reprogramming the memory causes wear and tear on the floating gate transistor. However, modern flash memory devices have a sophisticated wear-leveling algorithm that distributes writes evenly across the memory, which extends the lifespan of the device.