VFBGA Flash Memory 2,400+

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Screening Level	Terminal Form	Parallel or Serial	Operating Mode	Sector Size (Words)	Maximum Supply Current	No. of Words	Nominal Supply Voltage / Vsup (V)	Toggle Bit	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Alternate Memory Width	Sub-Category	Minimum Data Retention Time	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	No. of Sectors/Size	Command User Interface	Terminal Finish	Ready or Busy	Terminal Position	Write Protection	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Endurance	Maximum Clock Frequency (fCLK)	Width	Qualification	Serial Bus Type	Boot Block	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	Page Size (words)	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Type	Maximum Standby Current	Length	Common Flash Interface	Maximum Access Time	Programming Voltage (V)	Data Polling
SDINBDG4-16G-I2	Western Digital	FLASH CARD	OTHER	153	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS			17179869184 words	3.3			8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA153,14X14,20				.5 mm	85 Cel		16GX8	16G	-25 Cel					BOTTOM		R-PBGA-B153		3.6 V	.8 mm	3000 Write/Erase Cycles		11 mm				137438953472 bit	2.7 V						MLC NAND TYPE		13.5 mm
S34MS01G200BHI000	Cypress Semiconductor	FLASH	INDUSTRIAL	63	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS			134217728 words	1.8			8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH					.8 mm	85 Cel		128MX8	128M	-40 Cel					BOTTOM		R-PBGA-B63	3	1.95 V	1 mm			9 mm				1073741824 bit	1.7 V					260	SLC NAND TYPE		11 mm			1.8
S34ML02G100BHI000	Cypress Semiconductor	FLASH	INDUSTRIAL	63	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	128K	30 mA	268435456 words	3.3	NO	3/3.3	8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA63,10X12,32		Flash Memories		.8 mm	85 Cel		256MX8	256M	-40 Cel	2K	YES		YES	BOTTOM		R-PBGA-B63	3	3.6 V	1 mm			9 mm	Not Qualified			2147483648 bit	2.7 V		2K			260	SLC NAND TYPE	.00005 Amp	11 mm		25 ns	3	NO
SDINBDG4-8G-I1T	Western Digital	FLASH CARD		153	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS			8589934592 words	3.3			8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA153,14X14,20			1	.5 mm	85 Cel		8GX8	8G	-25 Cel					BOTTOM		R-PBGA-B153	3	3.6 V	.8 mm	3000 Write/Erase Cycles	200 MHz	11.5 mm				68719476736 bit	2.7 V						MLC NAND TYPE		13 mm			3.3
EMMC32G-TX29-8AC01	Kingston Technology Company	FLASH CARD		153	VFBGA	RECTANGULAR	UNSPECIFIED	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS			34359738368 words	3.3			8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA153,14X14,20				.5 mm	85 Cel		32GX8	32G	-25 Cel		NO			BOTTOM		R-PBGA-B153		3.6 V	.8 mm		200 MHz	11.5 mm				274877906944 bit	2.7 V						TLC NAND TYPE		13 mm			3.3	NO
MT29F1G08ABAFAH4-ITE:F	Micron Technology	FLASH	INDUSTRIAL	63	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS			134217728 words	3.3			8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH					.8 mm	85 Cel		128MX8	128M	-40 Cel					BOTTOM		R-PBGA-B63		3.6 V	1 mm			9 mm				1073741824 bit	2.7 V				NOT SPECIFIED	NOT SPECIFIED	SLC NAND TYPE		11 mm			3.3
MT29F8G08ADADAH4-IT:D	Micron Technology	FLASH	INDUSTRIAL	63	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	128K	35 mA	8589934592 words	3.3	NO	3.3	8	GRID ARRAY, FINE PITCH	BGA63,10X12,32		Flash Memories		.8 mm	85 Cel		8GX8	8G	-40 Cel	8K	YES	Tin/Silver/Copper (Sn/Ag/Cu)	YES	BOTTOM		R-PBGA-B63		3.6 V	1 mm			9 mm	Not Qualified			68719476736 bit	2.7 V		2K	e1	30	260	SLC NAND TYPE	.0001 Amp	11 mm		25 ns	3.3	NO
S29GL064N90BFI030	Infineon Technologies	FLASH	INDUSTRIAL	48	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	8K,64K	50 mA	4194304 words	3	YES	3/3.3	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA48,6X8,32	8	Flash Memories		.8 mm	85 Cel		4MX16	4M	-40 Cel	8,127	YES	TIN SILVER COPPER	YES	BOTTOM		R-PBGA-B48	3	3.6 V	1 mm			6.15 mm	Not Qualified		TOP	67108864 bit	2.7 V		8/16	e1	40	260	NOR TYPE	.000005 Amp	8.15 mm	YES	90 ns	3	YES
MT29F1G08ABADAH4-IT:D	Micron Technology	FLASH	INDUSTRIAL	63	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	128K	35 mA	134217728 words	3.3	NO	3.3	8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA63,10X12,32		Flash Memories		.8 mm	85 Cel		128MX8	128M	-40 Cel	1K	YES		YES	BOTTOM		R-PBGA-B63		3.6 V	1 mm			9 mm	Not Qualified			1073741824 bit	2.7 V		2K		30	260	SLC NAND TYPE	.0001 Amp	11 mm		25 ns	3.3	NO
MT29F4G01AAADDHC-ITX:D	Micron Technology	FLASH	INDUSTRIAL	63	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS		20 mA	4294967296 words	3.3		3/3.3	1	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA63,10X12,32		Flash Memories	10	.8 mm	85 Cel		4GX1	4G	-40 Cel			TIN SILVER COPPER		BOTTOM	HARDWARE	R-PBGA-B63		3.6 V	1 mm	100000 Write/Erase Cycles	50 MHz	10.5 mm	Not Qualified	SPI		4294967296 bit	2.7 V			e1	30	260	SLC NAND TYPE	.00005 Amp	13 mm			3.3
MT29F4G08ABADAH4:D	Micron Technology	FLASH	COMMERCIAL	63	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	128K	35 mA	536870912 words	3.3	NO	3/3.3	8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA63,10X12,32		Flash Memories		.8 mm	70 Cel		512MX8	512M	0 Cel	4K	YES		YES	BOTTOM		R-PBGA-B63		3.6 V	1 mm			9 mm	Not Qualified			4294967296 bit	2.7 V		2K		30	260	SLC NAND TYPE	.0001 Amp	11 mm		25 ns		NO
S29AL016J70BFI010	Infineon Technologies	FLASH	INDUSTRIAL	48	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	30 mA	1048576 words	3	YES	3/3.3	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA48,6X8,32	8	Flash Memories		.8 mm	85 Cel		1MX16	1M	-40 Cel	1,2,1,31	YES	TIN SILVER COPPER	YES	BOTTOM		R-PBGA-B48	3	3.6 V	1 mm			6.15 mm	Not Qualified		TOP	16777216 bit	2.7 V	TOP BOOT BLOCK		e1	40	260	NOR TYPE	.000005 Amp	8.15 mm	YES	70 ns	3	YES
S34ML02G200BHI000	Cypress Semiconductor	FLASH	INDUSTRIAL	63	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	128K	30 mA	268435456 words	3.3	NO	3/3.3	8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA63,10X12,32		Flash Memories		.8 mm	85 Cel		256MX8	256M	-40 Cel	2K	YES		YES	BOTTOM		R-PBGA-B63	3	3.6 V	1 mm			9 mm	Not Qualified			2147483648 bit	2.7 V		2K			260	SLC NAND TYPE	.00005 Amp	11 mm		25 ns	3	NO
KLMBG2JETD-B0410	Samsung	FLASH	OTHER	153	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS			34359738368 words	1.8			8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH					.5 mm	85 Cel		32GX8	32G	-25 Cel					BOTTOM		R-PBGA-B153		1.95 V	.8 mm		200 MHz	11.5 mm				274877906944 bit	1.7 V	ALSO OPERATES @ 3V SUP NOM					MLC NAND TYPE		13 mm			1.8
S29GL512T10GHI020	Infineon Technologies	FLASH	INDUSTRIAL	56	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS			33554432 words	3			16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH		8			.8 mm	85 Cel		32MX16	32M	-40 Cel					BOTTOM		R-PBGA-B56	3	3.6 V	1 mm			7 mm				536870912 bit	2.7 V								9 mm		100 ns	2.7
S29AL008J70BFI020	Infineon Technologies	FLASH	INDUSTRIAL	48	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	12 mA	524288 words	3	YES	3,3.3	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA48,6X8,32	8	Flash Memories		.8 mm	85 Cel		512KX16	512K	-40 Cel	1,2,1,15	YES	TIN COPPER SILVER	YES	BOTTOM		R-PBGA-B48	3	3.6 V	1 mm			6.15 mm	Not Qualified		BOTTOM	8388608 bit	2.7 V	BOTTOM BOOT BLOCK			30	260	NOR TYPE	.000005 Amp	8.15 mm	YES	70 ns	3	YES
S29GL064S70BHI030	Infineon Technologies	FLASH	INDUSTRIAL	48	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	8K,64K	80 mA	4194304 words	3	YES		16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA48,6X8,32	8		20	.8 mm	85 Cel	3-STATE	4MX16	4M	-40 Cel	8,127			YES	BOTTOM		R-PBGA-B48	3	3.6 V	1 mm	100000 Write/Erase Cycles		6.15 mm			TOP	67108864 bit	2.7 V		8/16				NOR TYPE	.0001 Amp	8.15 mm		70 ns	3	YES
SDINBDG4-32G-XI2	Western Digital	FLASH CARD	INDUSTRIAL	153	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS			34359738368 words	3.3			8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA153,14X14,20				.5 mm	85 Cel		32GX8	32G	-40 Cel					BOTTOM		R-PBGA-B153		3.6 V	1 mm	3000 Write/Erase Cycles		11 mm				274877906944 bit	2.7 V						MLC NAND TYPE		13.5 mm
EMMC04G-W627-X03U	Kingston Technology Company	FLASH CARD		153	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS			4294967296 words	3.3	NO		8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA153,14X14,20				.5 mm	85 Cel		4GX8	4G	-40 Cel		NO			BOTTOM		R-PBGA-B153		3.6 V	1 mm		200 MHz	11.5 mm				34359738368 bit	2.7 V						MLC NAND TYPE		13 mm			3.3	NO
SDIN5D1-2G-L	Sandisk	FLASH	OTHER	153	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS			2147483648 words	3.3			8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH					.5 mm	85 Cel		2GX8	2G	-25 Cel					BOTTOM		R-PBGA-B153	3	3.6 V	1 mm			11.5 mm				17179869184 bit	2.7 V						MLC NAND TYPE		13 mm			3.3
S29GL01GT10GHI020	Infineon Technologies	FLASH	INDUSTRIAL	56	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS			67108864 words	3			16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH					.8 mm	85 Cel		64MX16	64M	-40 Cel					BOTTOM		R-PBGA-B56	3	3.6 V	1 mm			7 mm				1073741824 bit	2.7 V								9 mm		100 ns	2.7
S29WS256P0SBFW000	Infineon Technologies	FLASH	OTHER	84	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	16K,64K	80 mA	16777216 words	1.8	YES	1.8	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA84,10X12,32		Flash Memories		.8 mm	85 Cel		16MX16	16M	-25 Cel	8,254	YES	TIN SILVER COPPER	YES	BOTTOM		R-PBGA-B84	3	1.95 V	1 mm			8 mm	Not Qualified		BOTTOM/TOP	268435456 bit	1.7 V	SYNCHRONOUS BURST MODE OPERATION POSSIBLE	8	e1	40	260	NOR TYPE	.000005 Amp	11.6 mm	YES	80 ns	1.8	YES
SDINBDG4-16G-ZA	Western Digital	FLASH CARD	INDUSTRIAL	153	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	SERIAL	SYNCHRONOUS			17179869184 words	3.3			8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA153,14X14,20			15	.5 mm	105 Cel		16GX8	16G	-40 Cel					BOTTOM		R-PBGA-B153		3.6 V	.8 mm			11.5 mm				137438953472 bit	2.7 V						MLC NAND TYPE		13 mm
ASFC8G31M-51BIN	Alliance Memory	FLASH CARD		153	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS			8589934592 words	3	NO		8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA153,14X14,20				.5 mm	85 Cel		8GX8	8G	-40 Cel		NO			BOTTOM		R-PBGA-B153		3.6 V	1 mm		200 MHz	11.5 mm				68719476736 bit	2.7 V						MLC NAND TYPE		13 mm			3	NO
MT29F2G08ABBEAH4-IT:E	Micron Technology	FLASH	INDUSTRIAL	63	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	128K	20 mA	268435456 words	1.8	NO	1.8	8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA63,10X12,32		Flash Memories		.8 mm	85 Cel		256MX8	256M	-40 Cel	2K	YES	TIN SILVER COPPER	YES	BOTTOM		R-PBGA-B63		1.95 V	1 mm			9 mm	Not Qualified			2147483648 bit	1.7 V		2K	e1			SLC NAND TYPE	.00005 Amp	11 mm		25 ns	1.8	NO
EMMC04G-W627-E02U	Kingston Technology Company	FLASH CARD		153	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS		85.7 mA	4294967296 words	3.3			8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA153,14X14,20				.5 mm	85 Cel		4GX8	4G	-40 Cel					BOTTOM		R-PBGA-B153		3.6 V	1 mm		200 MHz	11.5 mm				34359738368 bit	2.7 V						MLC NAND TYPE	.00013 Amp	13 mm			3.3
MTFC32GAZAQHD-AIT	Micron Technology	FLASH CARD	INDUSTRIAL	153	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	PARALLEL	SYNCHRONOUS			34359738368 words	1.8			8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA153,14X14,20				.5 mm	85 Cel		32GX8	32G	-40 Cel					BOTTOM		R-PBGA-B153		1.95 V	.9 mm		200 MHz	11.5 mm				274877906944 bit	1.7 V						NAND TYPE		13 mm			1.8
MX30LF1G18AC-XKI	Macronix	FLASH	INDUSTRIAL	63	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS			131072 words	3			8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH					.8 mm	85 Cel		128KX8	128K	-40 Cel			TIN SILVER COPPER		BOTTOM		R-PBGA-B63		3.6 V	1 mm			9 mm				1048576 bit	2.7 V			e1			SLC NAND TYPE		11 mm			3
S29GL512S10GHI020	Infineon Technologies	FLASH		56	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	128K	100 mA	67108864 words	3	YES		8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA56,8X8,32	1		2	.8 mm	85 Cel	3-STATE	64MX8	64M	-40 Cel	512	YES	TIN SILVER COPPER	YES	BOTTOM		R-PBGA-B56	3	3.6 V	1 mm	100000 Write/Erase Cycles		7 mm			BOTTOM/TOP	536870912 bit	2.7 V	20 YEARS DATA RETENTION; 10000 ERASE/PROGRAM CYCLES	32	e1			NAND TYPE	.0001 Amp	9 mm	YES	100 ns	3	YES
EM32FQYHY-BA000-2	Delkin Devices	FLASH CARD		153	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS			34359738368 words	3.3	NO		8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA153,14X14,20				.5 mm	85 Cel		32GX8	32G	-40 Cel		NO			BOTTOM	HARDWARE	R-PBGA-B156			1 mm			11.5 mm				274877906944 bit							TLC NAND TYPE		13 mm			3.3	NO
MT29F4G08ABBDAHC-IT:D	Micron Technology	FLASH	INDUSTRIAL	63	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	128K	20 mA	536870912 words	1.8	NO	1.8	8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA63,10X12,32		Flash Memories		.8 mm	85 Cel		512MX8	512M	-40 Cel	4K	YES	TIN SILVER COPPER	YES	BOTTOM		R-PBGA-B63		1.95 V	1 mm			10.5 mm	Not Qualified			4294967296 bit	1.7 V		2K	e1	30	260	SLC NAND TYPE	.00005 Amp	13 mm		25 ns	1.8	NO
S29PL127J70BAI000	Cypress Semiconductor	FLASH	INDUSTRIAL	80	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	4K,32K	70 mA	8388608 words	3	YES	3/3.3	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA80,8X12,32		Flash Memories		.8 mm	85 Cel		8MX16	8M	-40 Cel	16,254	YES		YES	BOTTOM		R-PBGA-B80		3.6 V	1 mm			8 mm	Not Qualified		BOTTOM/TOP	134217728 bit	2.7 V	TOP AND BOTTOM BOOT BLOCK	8		NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.000005 Amp	11 mm	YES	70 ns	3	YES
MTFC64GAZAQHD-IT	Micron Technology	FLASH CARD		153	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS			68719476736 words				8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA153,14X14,20			1	.5 mm	95 Cel		64GX8	64G	-40 Cel					BOTTOM		R-PBGA-B153		3.6 V	.9 mm			11.5 mm				549755813888 bit	2.7 V						NAND TYPE		13 mm
EM04APYD3-BA000-2	Delkin Devices	FLASH CARD	INDUSTRIAL	153	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS			4294967296 words	3.3			8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH					.5 mm	85 Cel		4GX8	4G	-40 Cel					BOTTOM		R-PBGA-B153		3.6 V	1 mm			11.5 mm				34359738368 bit	2.7 V				NOT SPECIFIED	NOT SPECIFIED			13 mm			3.3
MTFC2GMXEA-WT	Micron Technology	Embedded MMC		153	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL		SYNCHRONOUS		70 mA	2147483648 words	1.8			8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA153,14X14,20				.5 mm	85 Cel	OPEN-DRAIN	2GX8	2G	-25 Cel					BOTTOM	HARDWARE	R-PBGA-B153		1.95 V	.8 mm		52 MHz	11.5 mm				17179869184 bit	1.65 V						NAND TYPE		13 mm			1.8
MX25R3235FBDIL0	Macronix	FLASH	INDUSTRIAL	12	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS		6 mA	4194304 words	1.8			8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA12,5X7,14/8	2		20	.35 mm	85 Cel	3-STATE	4MX8	4M	-40 Cel					BOTTOM	HARDWARE/SOFTWARE	R-PBGA-B12		3.6 V	.52 mm	100000 Write/Erase Cycles	80 MHz			SPI		33554432 bit	1.65 V				NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.000024 Amp				1.8
MT29F1G08ABBEAH4-ITX:E	Micron Technology	FLASH		63	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	128K	20 mA	134217728 words	1.8	YES		8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA63,10X12,32				.8 mm	85 Cel	3-STATE	128MX8	128M	-40 Cel	1K	NO		YES	BOTTOM		R-PBGA-B63		1.95 V	1 mm	100000 Write/Erase Cycles		9 mm				1073741824 bit	1.7 V		2K				SLC NAND TYPE	.00005 Amp	11 mm			1.8	YES
MTFC8GLDEA-1MWT	Micron Technology	FLASH CARD	OTHER	153	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS			8589934592 words	3.3	NO		8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA153,14X14,20				.5 mm	85 Cel		8GX8	8G	-25 Cel		NO	TIN SILVER COPPER NICKEL		BOTTOM		R-PBGA-B153		3.6 V	.8 mm		52 MHz	11.5 mm				68719476736 bit	2.7 V						MLC NAND TYPE		13 mm			3.3	NO
SDINBDG4-32G-ZA	Western Digital	FLASH CARD	INDUSTRIAL	153	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	SERIAL	SYNCHRONOUS			34359738368 words	3.3			8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA153,14X14,20			15	.5 mm	105 Cel		32GX8	32G	-40 Cel			TIN SILVER COPPER NICKEL GERMANIUM		BOTTOM		R-PBGA-B153		3.6 V	1 mm			11.5 mm				274877906944 bit	2.7 V						MLC NAND TYPE		13 mm
SDINBDG4-32G-XA	Western Digital	FLASH CARD	INDUSTRIAL	153	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	SERIAL	SYNCHRONOUS			34359738368 words	3.3			8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA153,14X14,20			15	.5 mm	85 Cel		32GX8	32G	-40 Cel					BOTTOM		R-PBGA-B153		3.6 V	1 mm			11.5 mm				274877906944 bit	2.7 V						MLC NAND TYPE		13 mm
ASFC4G31M-51BINTR	Alliance Memory	FLASH CARD		153	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS			4294967296 words	3	NO		8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA153,14X14,20				.5 mm	85 Cel		4GX8	4G	-40 Cel		NO			BOTTOM		R-PBGA-B153		3.6 V	1 mm		200 MHz	11.5 mm				34359738368 bit	2.7 V						MLC NAND TYPE		13 mm			3	NO
S29AL016J70BFI012	Infineon Technologies	FLASH	INDUSTRIAL	48	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	30 mA	1048576 words	3	YES	3/3.3	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA48,6X8,32	8	Flash Memories		.8 mm	85 Cel		1MX16	1M	-40 Cel	1,2,1,31	YES	TIN SILVER COPPER	YES	BOTTOM		R-PBGA-B48	3	3.6 V	1 mm			6.15 mm	Not Qualified		TOP	16777216 bit	2.7 V	TOP BOOT BLOCK		e1	40	260	NOR TYPE	.000005 Amp	8.15 mm	YES	70 ns	3	YES
S29AL016J70BFI013	Infineon Technologies	FLASH	INDUSTRIAL	48	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	30 mA	1048576 words	3	YES	3/3.3	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA48,6X8,32	8	Flash Memories		.8 mm	85 Cel		1MX16	1M	-40 Cel	1,2,1,31	YES	TIN SILVER COPPER	YES	BOTTOM		R-PBGA-B48	3	3.6 V	1 mm			6.15 mm	Not Qualified		TOP	16777216 bit	2.7 V	TOP BOOT BLOCK		e1	40	260	NOR TYPE	.000005 Amp	8.15 mm	YES	70 ns	3	YES
S29AL016J70BFI023	Infineon Technologies	FLASH	INDUSTRIAL	48	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	30 mA	1048576 words	3	YES	3/3.3	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA48,6X8,32	8	Flash Memories		.8 mm	85 Cel		1MX16	1M	-40 Cel	1,2,1,31	YES	TIN SILVER COPPER	YES	BOTTOM		R-PBGA-B48	3	3.6 V	1 mm			6.15 mm	Not Qualified		BOTTOM	16777216 bit	2.7 V	BOTTOM BOOT BLOCK		e1	40	260	NOR TYPE	.000005 Amp	8.15 mm	YES	70 ns	3	YES
EMMC16G-M525-X01U	Kingston Technology Company	FLASH	OTHER	153	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL										GRID ARRAY, VERY THIN PROFILE, FINE PITCH					.5 mm										BOTTOM		R-PBGA-B153			1 mm			11.5 mm									NOT SPECIFIED	NOT SPECIFIED	MLC NAND TYPE		13 mm			3.3
MT29F4G08ABBDAH4-IT:D	Micron Technology	FLASH	INDUSTRIAL	63	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	128K	20 mA	536870912 words	1.8	NO	1.8	8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA63,10X12,32		Flash Memories		.8 mm	85 Cel		512MX8	512M	-40 Cel	4K	YES		YES	BOTTOM		R-PBGA-B63		1.95 V	1 mm			9 mm	Not Qualified			4294967296 bit	1.7 V		2K		30	260	SLC NAND TYPE	.00005 Amp	11 mm		25 ns	1.8	NO
SDINBDG4-32G-I2	Western Digital	FLASH CARD	OTHER	153	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS			34359738368 words	3.3			8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA153,14X14,20				.5 mm	85 Cel		32GX8	32G	-25 Cel					BOTTOM		R-PBGA-B153		3.6 V	1 mm	3000 Write/Erase Cycles		11 mm				274877906944 bit	2.7 V						MLC NAND TYPE		13.5 mm
SFEM008GB1EA1TO-I-GE-111-STD	Swissbit Ag	FLASH CARD		153	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL					8589934592 words	3.3			8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH					.5 mm	85 Cel		8GX8	8G	-40 Cel					BOTTOM		R-PBGA-B153		3.6 V	1 mm			11.5 mm				68719476736 bit	2.7 V				NOT SPECIFIED	NOT SPECIFIED	MLC NAND TYPE		13 mm			3.3

Flash Memory

Flash memory is a type of non-volatile computer memory that is commonly used in digital devices such as USB drives, solid-state drives, and digital cameras. It is a type of EEPROM (Electrically Erasable Programmable Read-Only Memory) that allows data to be erased and reprogrammed in blocks instead of one byte at a time. Flash memory uses a floating gate transistor to store data, which allows it to retain information even when the power is turned off.

Flash memory is widely used in digital devices because of its high capacity, small size, and fast access times. It is also more durable than other types of memory, such as hard disk drives, because it has no moving parts. This makes it ideal for use in portable devices that may be subject to physical shock or vibration.

There are two types of flash memory: NOR flash and NAND flash. NOR flash is faster than NAND flash, but it has lower density and higher cost per bit. NOR flash is typically used for code storage, such as firmware or boot code, because it provides faster access times. NAND flash has higher density and lower cost per bit, which makes it ideal for data storage applications.

Flash memory has a limited lifespan, as it can only be erased and reprogrammed a limited number of times. This is because the process of erasing and reprogramming the memory causes wear and tear on the floating gate transistor. However, modern flash memory devices have a sophisticated wear-leveling algorithm that distributes writes evenly across the memory, which extends the lifespan of the device.