VFBGA Flash Memory 2,400+

Reset All

Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Screening Level	Terminal Form	Parallel or Serial	Operating Mode	Sector Size (Words)	Maximum Supply Current	No. of Words	Nominal Supply Voltage / Vsup (V)	Toggle Bit	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Alternate Memory Width	Sub-Category	Minimum Data Retention Time	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	No. of Sectors/Size	Command User Interface	Terminal Finish	Ready or Busy	Terminal Position	Write Protection	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Endurance	Maximum Clock Frequency (fCLK)	Width	Qualification	Serial Bus Type	Boot Block	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	Page Size (words)	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Type	Maximum Standby Current	Length	Common Flash Interface	Maximum Access Time	Programming Voltage (V)	Data Polling
AT25XE321D-UUN-T	Renesas Electronics	FLASH	INDUSTRIAL	8	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS		16.5 mA	2097152 words	3.3			16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA12,5X7,14/8			20	.35 mm	85 Cel	3-STATE	2MX16	2M	-40 Cel					BOTTOM	HARDWARE/SOFTWARE	R-PBGA-B12	1	3.6 V	.461 mm	100000 Write/Erase Cycles	133 MHz	1.767 mm		SPI		33554432 bit	2.7 V	ALSO OPERATES AT 108MHZ @1.65V MINIMUM SUPPLY					NOR TYPE	.00005 Amp	2.387 mm			1.8
MT29F8G08ADADAH4-IT:DTR	Micron Technology	FLASH		63	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	128K	35 mA	1073741824 words	3.3	NO		8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA63,10X12,32			10	.8 mm	85 Cel	3-STATE	1GX8	1G	-40 Cel	8K	YES		YES	BOTTOM		R-PBGA-B63		3.6 V	1 mm	100000 Write/Erase Cycles		9 mm				8589934592 bit	2.7 V		2K				SLC NAND TYPE	.0001 Amp	11 mm			3.3	NO
MTFC4GMXEA-WT	Micron Technology	Embedded MMC		153	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL		SYNCHRONOUS		80 mA	4294967296 words	1.8			8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA153,14X14,20				.5 mm	85 Cel	OPEN-DRAIN	4GX8	4G	-25 Cel					BOTTOM	HARDWARE	R-PBGA-B153		1.95 V	.8 mm		52 MHz	11.5 mm				34359738368 bit	1.65 V						NAND TYPE		13 mm			1.8
MT29F1G08ABADAH4-ITX:D	Micron Technology	FLASH	INDUSTRIAL	63	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	128K	35 mA	134217728 words	3.3	NO	3.3	8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA63,10X12,32		Flash Memories		.8 mm	85 Cel		128MX8	128M	-40 Cel	1K	YES	TIN SILVER COPPER	YES	BOTTOM		R-PBGA-B63		3.6 V	1 mm			9 mm	Not Qualified			1073741824 bit	2.7 V		2K	e1			SLC NAND TYPE	.0001 Amp	11 mm		25 ns	3.3	NO
MT29F2G08ABAEAH4:E	Micron Technology	FLASH	COMMERCIAL	63	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	128K	35 mA	268435456 words	3.3	NO	3/3.3	8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA63,10X12,32		Flash Memories		.8 mm	70 Cel		256MX8	256M	0 Cel	2K	YES		YES	BOTTOM		R-PBGA-B63		3.6 V	1 mm			9 mm	Not Qualified			2147483648 bit	2.7 V		2K		NOT SPECIFIED	NOT SPECIFIED	SLC NAND TYPE	.0001 Amp	11 mm		25 ns	2.7	NO
EM02APYD4-BA000-2	Delkin Devices	FLASH CARD	INDUSTRIAL	153	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS			2147483648 words	3.3			8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH					.5 mm	85 Cel		2GX8	2G	-40 Cel					BOTTOM		R-PBGA-B153		3.6 V	1 mm			11.5 mm				17179869184 bit	2.7 V				NOT SPECIFIED	NOT SPECIFIED			13 mm			3.3
EM04APGD4-BA000-2	Delkin Devices	FLASH CARD	INDUSTRIAL	153	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS			4294967296 words	3.3			8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH					.5 mm	85 Cel		4GX8	4G	-40 Cel					BOTTOM		R-PBGA-B153		3.6 V	1 mm			11.5 mm				34359738368 bit	2.7 V				NOT SPECIFIED	NOT SPECIFIED			13 mm			3.3
S34MS01G100BHI000	Cypress Semiconductor	FLASH	INDUSTRIAL	63	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	128K	20 mA	134217728 words	1.8	NO	1.8	8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA63,8X12,32		Flash Memories		.8 mm	85 Cel		128MX8	128M	-40 Cel	1K	YES		YES	BOTTOM		R-PBGA-B63	3	1.95 V	1 mm			9 mm	Not Qualified			1073741824 bit	1.7 V		2K			260	SLC NAND TYPE	.00005 Amp	11 mm		45 ns	1.8	NO
MT29F4G08ABBDAH4:D	Micron Technology	FLASH	COMMERCIAL	63	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	128K	20 mA	536870912 words	1.8	NO	1.8	8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA63,10X12,32		Flash Memories		.8 mm	70 Cel		512MX8	512M	0 Cel	4K	YES		YES	BOTTOM		R-PBGA-B63		1.95 V	1 mm			9 mm	Not Qualified			4294967296 bit	1.7 V		2K		30	260	SLC NAND TYPE	.00005 Amp	11 mm		25 ns		NO
SDINBDG4-16G-I	Western Digital	FLASH CARD		153	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS			17179869184 words	3.3			8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA153,14X14,20			1	.5 mm	85 Cel		16GX8	16G	-25 Cel					BOTTOM		R-PBGA-B153		3.6 V	.8 mm	3000 Write/Erase Cycles	200 MHz	11.5 mm				137438953472 bit	2.7 V						MLC NAND TYPE		13 mm			3.3
IS22TF32G-JCLA2	Integrated Silicon Solution	FLASH		153	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	SERIAL	SYNCHRONOUS		55 mA	34359738368 words	3.3			8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA153,14X14,20				.5 mm	105 Cel	3-STATE	32GX8	32G	-40 Cel					BOTTOM	HARDWARE/SOFTWARE	R-PBGA-B153		3.6 V	1 mm		200 MHz	11.5 mm				274877906944 bit	2.7 V				NOT SPECIFIED	NOT SPECIFIED	TLC NAND TYPE	.00003 Amp	13 mm			3.3
MTFC8GAMALGT-AAT	Micron Technology	FLASH CARD	INDUSTRIAL	153	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	PARALLEL	SYNCHRONOUS			8589934592 words				8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA153,14X14,20			5	.5 mm	105 Cel		8GX8	8G	-40 Cel					BOTTOM		R-PBGA-B153		3.6 V	.8 mm		200 MHz	11.5 mm				68719476736 bit	2.7 V						NAND TYPE		13 mm
MT29F4G08ABBDAH4-ITX:D	Micron Technology	FLASH	INDUSTRIAL	63	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	128K	20 mA	536870912 words	1.8	NO	1.8	8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA63,10X12,32		Flash Memories		.8 mm	85 Cel		512MX8	512M	-40 Cel	4K	YES		YES	BOTTOM		R-PBGA-B63		1.95 V	1 mm			9 mm	Not Qualified			4294967296 bit	1.7 V		2K		30	260	SLC NAND TYPE	.00005 Amp	11 mm		25 ns	1.8	NO
S40410081B1B1W000	Cypress Semiconductor	FLASH	OTHER	153	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS			8589934592 words	3			8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH		4			.5 mm	85 Cel		8GX8	8G	-25 Cel					BOTTOM		R-PBGA-B153		3.6 V	1 mm			11.5 mm				68719476736 bit	2.7 V						MLC NAND TYPE		13 mm			3
S40410161B1B1W010	Cypress Semiconductor	FLASH	OTHER	153	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS			17179869184 words	3			8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH		4			.5 mm	85 Cel		16GX8	16G	-25 Cel					BOTTOM		R-PBGA-B153		3.6 V	1 mm			11.5 mm				137438953472 bit	2.7 V						MLC NAND TYPE		13 mm			3
MT29F4G08ABADAH4-AITX:D	Micron Technology	FLASH	INDUSTRIAL	63	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS			536870912 words	3.3			8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH					.8 mm	85 Cel		512MX8	512M	-40 Cel					BOTTOM		R-PBGA-B63		3.6 V	1 mm			9 mm				4294967296 bit	2.7 V				NOT SPECIFIED	NOT SPECIFIED	SLC NAND TYPE		11 mm			1.8
MTFC8GAMALGT-AIT	Micron Technology	FLASH CARD	INDUSTRIAL	153	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	PARALLEL	SYNCHRONOUS			8589934592 words				8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA153,14X14,20			5	.5 mm	85 Cel		8GX8	8G	-40 Cel					BOTTOM		R-PBGA-B153		3.6 V	.8 mm		200 MHz	11.5 mm				68719476736 bit	2.7 V						NAND TYPE		13 mm
S40410081B1B1I000	Cypress Semiconductor	FLASH	INDUSTRIAL	153	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS			8589934592 words	3			8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH		4			.5 mm	85 Cel		8GX8	8G	-40 Cel					BOTTOM		R-PBGA-B153		3.6 V	1 mm			11.5 mm				68719476736 bit	2.7 V						MLC NAND TYPE		13 mm			3
S40410081B1B1I003	Cypress Semiconductor	FLASH	INDUSTRIAL	153	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS			8589934592 words	3			8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH		4			.5 mm	85 Cel		8GX8	8G	-40 Cel					BOTTOM		R-PBGA-B153		3.6 V	1 mm			11.5 mm				68719476736 bit	2.7 V								13 mm			3
S40410161B1B1I010	Cypress Semiconductor	FLASH	INDUSTRIAL	153	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS			17179869184 words	3			8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH		4			.5 mm	85 Cel		16GX8	16G	-40 Cel					BOTTOM		R-PBGA-B153		3.6 V	1 mm			11.5 mm				137438953472 bit	2.7 V						MLC NAND TYPE		13 mm			3
S40410161B1B1I013	Cypress Semiconductor	FLASH	INDUSTRIAL	153	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS			17179869184 words	3			8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH		4			.5 mm	85 Cel		16GX8	16G	-40 Cel					BOTTOM		R-PBGA-B153		3.6 V	1 mm			11.5 mm				137438953472 bit	2.7 V				NOT SPECIFIED	NOT SPECIFIED			13 mm			3
EMMC32G-IX29-8AC02	Kingston Technology Company	FLASH CARD	INDUSTRIAL	153	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS			34359738368 words	3.3			8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA153,14X14,20				.5 mm	85 Cel	OPEN-DRAIN	32GX8	32G	-40 Cel			Tin/Silver/Copper/Nickel (Sn/Ag/Cu/Ni)		BOTTOM		R-PBGA-B153		3.6 V	.8 mm		200 MHz	11.5 mm				274877906944 bit	2.7 V			e2			SLC NAND TYPE		13 mm			3.3
IS21ES32G-JCLI	Integrated Silicon Solution	FLASH	INDUSTRIAL	153	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS			34359738368 words	3.3	NO		8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA153,14X14,20	1			.5 mm	85 Cel	3-STATE	32GX8	32G	-40 Cel		NO	TIN SILVER COPPER		BOTTOM		R-PBGA-B153	3	3.6 V	1 mm		200 MHz	11.5 mm				274877906944 bit	2.7 V			e1	10	260	MLC NAND TYPE		13 mm			3.3	NO
MTFC16GJDEC-4MIT	Micron Technology	FLASH CARD	INDUSTRIAL	169	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS			17179869184 words	3.3			8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA169,14X28,20				.5 mm	85 Cel		16GX8	16G	-40 Cel			TIN SILVER COPPER		BOTTOM		R-PBGA-B169		3.6 V	.8 mm		52 MHz	14 mm				137438953472 bit	2.7 V			e1			MLC NAND TYPE		18 mm			3.3
MX25R8035FBDIL0	Macronix	FLASH	INDUSTRIAL	8	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS			2097152 words	1.8			4	GRID ARRAY, VERY THIN PROFILE, FINE PITCH		2				85 Cel		2MX4	2M	-40 Cel					BOTTOM		R-PBGA-B8		3.6 V	.52 mm		104 MHz					8388608 bit	1.65 V	IT IS ALSO CONFIGURED AS 8M X 1			NOT SPECIFIED	NOT SPECIFIED						1.8
MX25U51245GBFI0A	Macronix	FLASH		68	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS		40 mA	67108864 words	1.8			8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA56,8X10,20			20	.4 mm	85 Cel	3-STATE	64MX8	64M	-40 Cel					BOTTOM	HARDWARE/SOFTWARE	R-PBGA-B68		2 V	.44 mm	100000 Write/Erase Cycles	166 MHz			SPI		536870912 bit	1.65 V						NOR TYPE	.00005 Amp				1.8
SFEM008GB1EA1TO-I-GE-121-STD	Swissbit Ag	FLASH CARD		153	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL					8589934592 words	3.3			8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH					.5 mm	85 Cel		8GX8	8G	-40 Cel					BOTTOM		R-PBGA-B153		3.6 V	1 mm			11.5 mm				68719476736 bit	2.7 V						MLC NAND TYPE		13 mm			3.3
AT45DB081E-UUN-T	Renesas Electronics	FLASH	INDUSTRIAL	8	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS		16 mA	1048576 words	3			8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA8,2X4(UNSPEC)			20	.5 mm	85 Cel	3-STATE	1MX8	1M	-40 Cel			MATTE TIN		BOTTOM	HARDWARE/SOFTWARE	R-PBGA-B8	1	3.6 V	.52 mm	100000 Write/Erase Cycles	133 MHz	1.605 mm		SPI		8388608 bit	2.3 V	IT ALSO OPERATES WITH 1.7V MIN WITH 85 MHZ FREQUENCY;256K-BIT EXTRA FLASH AVAILABLE		e3			NOR TYPE	.00004 Amp	2.317 mm			3
EMMC04G-M627-M06U	Kingston Technology Company	FLASH		153	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS			4294967296 words	3.3	NO		8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA153,14X14,20				.5 mm	85 Cel		4GX8	4G	-25 Cel		NO			BOTTOM	HARDWARE	R-PBGA-B153		3.6 V	.8 mm		200 MHz	11.5 mm				34359738368 bit	2.7 V						MLC NAND TYPE		13 mm			3.3	NO
MT29F1G08ABBEAH4-AITX:E	Micron Technology	FLASH	INDUSTRIAL	63	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS			134217728 words	1.8			8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH					.8 mm	85 Cel		128MX8	128M	-40 Cel					BOTTOM		R-PBGA-B63		1.95 V	1 mm			9 mm				1073741824 bit	1.7 V				NOT SPECIFIED	NOT SPECIFIED	SLC NAND TYPE		11 mm			1.8
MTFC16GAKAEJP-4MIT	Micron Technology	FLASH CARD	INDUSTRIAL	153	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS			17179869184 words				8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH					.5 mm	85 Cel		16GX8	16G	-40 Cel			Tin/Silver/Copper (Sn/Ag/Cu)		BOTTOM		R-PBGA-B153		3.6 V	1 mm			11.5 mm				137438953472 bit	2.7 V			e1	30	260			13 mm			2.7
MTFC16GJDEC-2MWT	Micron Technology	FLASH CARD	OTHER	169	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS			17179869184 words	3.3	NO		8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA169,14X28,20				.5 mm	85 Cel		16GX8	16G	-25 Cel		NO	TIN SILVER COPPER		BOTTOM		R-PBGA-B169		3.6 V	.8 mm		52 MHz	14 mm				137438953472 bit	2.7 V						MLC NAND TYPE		18 mm			3.3	NO
MTFC64GASAQHD-AAT	Micron Technology	FLASH CARD		153	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q104	BALL	PARALLEL	SYNCHRONOUS			68719476736 words				8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA153,14X14,20			1	.5 mm	105 Cel		64GX8	64G	-40 Cel		NO	TIN SILVER COPPER		BOTTOM		R-PBGA-B153		3.6 V	.9 mm		200 MHz	11.5 mm				549755813888 bit	2.7 V			e1	30	260	NAND TYPE		13 mm				NO
PF48F4400P0VBQEA	Micron Technology	FLASH	INDUSTRIAL	88	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS	16K,64K	31 mA	33554432 words		NO	1.8,1.8/3.3	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA88,8X12,32	16	Flash Memories		.8 mm	85 Cel		32MX16	32M	-40 Cel	8, 510	YES			BOTTOM		R-PBGA-B88		2 V	1 mm			8 mm	Not Qualified		BOTTOM/TOP	536870912 bit	1.7 V	ASYNCHRONOUS READ MODE			30	260	NOR TYPE	.00042 Amp	11 mm	YES	100 ns	1.8	NO
S29GL032N90BFI040	Infineon Technologies	FLASH	INDUSTRIAL	48	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	8K,64K	50 mA	2097152 words	3	YES	3/3.3	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA48,6X8,32	8	Flash Memories		.8 mm	85 Cel		2MX16	2M	-40 Cel	8,63	YES	TIN SILVER COPPER	YES	BOTTOM		R-PBGA-B48	3	3.6 V	1 mm			6.15 mm	Not Qualified		BOTTOM	33554432 bit	2.7 V		8/16	e1	40	260	NOR TYPE	.000005 Amp	8.15 mm	YES	90 ns	3	YES
W25Q128JWYIQ	Winbond Electronics	FLASH	INDUSTRIAL	21	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS		20 mA	16777216 words	1.8			8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA21,6X6,20	1		20	.5 mm	85 Cel	3-STATE	16MX8	16M	-40 Cel					BOTTOM	HARDWARE/SOFTWARE	R-PBGA-B21		1.95 V	.5 mm	100000 Write/Erase Cycles	133 MHz			SPI		134217728 bit	1.7 V				NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.00005 Amp				1.8
W25Q32JWBYIQ	Winbond Electronics	FLASH	INDUSTRIAL	12	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS			4194304 words	1.8			8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH		1			.5 mm	85 Cel		4MX8	4M	-40 Cel					BOTTOM		R-PBGA-B12		1.95 V	.54 mm		133 MHz					33554432 bit	1.7 V				NOT SPECIFIED	NOT SPECIFIED						1.8
W29N01HZBINA	Winbond Electronics	FLASH	INDUSTRIAL	63	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS			134217728 words	1.8			8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH					.8 mm	85 Cel		128MX8	128M	-40 Cel					BOTTOM		R-PBGA-B63		1.95 V	1 mm			9 mm				1073741824 bit	1.7 V				NOT SPECIFIED	NOT SPECIFIED	SLC NAND TYPE		11 mm			1.8
AT25SL321-UUE-T	Renesas Electronics	FLASH	INDUSTRIAL	8	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS		25 mA	4194304 words	1.8			8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA8,2X4,20			20	.5 mm	85 Cel	3-STATE	4MX8	4M	-40 Cel					BOTTOM	HARDWARE/SOFTWARE	R-PBGA-B8	1	2 V	.52 mm	100000 Write/Erase Cycles	104 MHz	1.551 mm		SPI		33554432 bit	1.7 V						NOR TYPE	.00005 Amp	2.284 mm			1.8
KLMCG4JETD-B0410	Samsung	FLASH	OTHER	153	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS			68719476736 words	1.8			8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH					.5 mm	85 Cel		64GX8	64G	-25 Cel					BOTTOM		R-PBGA-B153		1.95 V	1 mm		200 MHz	11.5 mm				549755813888 bit	1.7 V	ALSO OPERATES @ 3V SUP NOM					MLC NAND TYPE		13 mm			1.8
MT29F2G08ABAEAWP-AATX:E	Micron Technology	FLASH	INDUSTRIAL	63	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	PARALLEL	ASYNCHRONOUS	128K	35 mA	268435456 words	3.3	NO	3/3.3	8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	TSSOP48,.8,20		Flash Memories		.8 mm	105 Cel		256MX8	256M	-40 Cel	2K	YES	MATTE TIN	YES	BOTTOM		R-PBGA-B63		3.6 V	1 mm			9 mm	Not Qualified			2147483648 bit	2.7 V		2K	e3	30	260	SLC NAND TYPE	.0001 Amp	11 mm		25 ns	3.3	NO
MT29F2G16ABBEAHC-AIT:E	Micron Technology	FLASH	INDUSTRIAL	63	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	PARALLEL	ASYNCHRONOUS	64K	20 mA	134217728 words	1.8	NO	1.8	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA63,10X12,32		Flash Memories		.8 mm	85 Cel		128MX16	128M	-40 Cel	2K	YES		YES	BOTTOM		R-PBGA-B63		1.95 V	1 mm			10.5 mm	Not Qualified			2147483648 bit	1.7 V		1K				SLC NAND TYPE	.00005 Amp	13 mm		25 ns	1.8	NO
MT29F8G08ADBDAH4-IT:D	Micron Technology	FLASH	INDUSTRIAL	63	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	128K	20 mA	1073741824 words	1.8	NO	1.8	8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA63,10X12,32		Flash Memories		.8 mm	85 Cel		1GX8	1G	-40 Cel	8K	YES	TIN SILVER COPPER	YES	BOTTOM		R-PBGA-B63		1.95 V	1 mm			9 mm	Not Qualified			8589934592 bit	1.7 V		2K	e1			SLC NAND TYPE	.00005 Amp	11 mm		25 ns		NO
MT29F8G16ADBDAH4-IT:D	Micron Technology	FLASH	INDUSTRIAL	63	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	64K	20 mA	536870912 words	1.8	NO	1.8	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA63,10X12,32		Flash Memories		.8 mm	85 Cel		512MX16	512M	-40 Cel	8K	YES		YES	BOTTOM		R-PBGA-B63		1.95 V	1 mm			9 mm	Not Qualified			8589934592 bit	1.7 V		1K		30	260	SLC NAND TYPE	.00005 Amp	11 mm		25 ns		NO
MTFC32GASAQHD-AAT	Micron Technology	FLASH CARD		153	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q104	BALL	PARALLEL	SYNCHRONOUS			34359738368 words				8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA153,14X14,20			1	.5 mm	105 Cel		32GX8	32G	-40 Cel		NO			BOTTOM		R-PBGA-B153		3.6 V	.9 mm		200 MHz	11.5 mm				274877906944 bit	2.7 V						NAND TYPE		13 mm				NO
MTFC4GLDEA-0MWT	Micron Technology	FLASH CARD	OTHER	153	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS			4294967296 words	3.3	NO		8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA153,14X14,20				.5 mm	85 Cel		4GX8	4G	-25 Cel		NO	TIN SILVER COPPER		BOTTOM		R-PBGA-B153		3.6 V	.8 mm		52 MHz	11.5 mm				34359738368 bit	2.7 V						MLC NAND TYPE		13 mm			3.3	NO
MTFC4GLDEA-0MWTTR	Micron Technology	FLASH CARD	OTHER	153	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS			4294967296 words	3.3	NO		8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA153,14X14,20				.5 mm	85 Cel		4GX8	4G	-25 Cel		NO	TIN SILVER COPPER		BOTTOM		R-PBGA-B153		3.6 V	.8 mm		52 MHz	11.5 mm				34359738368 bit	2.7 V			e1			MLC NAND TYPE		13 mm			3.3	NO
MTFC64GASAQHD-AIT	Micron Technology	FLASH CARD		153	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q104	BALL	PARALLEL	SYNCHRONOUS			68719476736 words				8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA153,14X14,20			1	.5 mm	85 Cel		64GX8	64G	-40 Cel		NO			BOTTOM		R-PBGA-B153		3.6 V	.9 mm		200 MHz	11.5 mm				549755813888 bit	2.7 V						NAND TYPE		13 mm				NO

Flash Memory

Flash memory is a type of non-volatile computer memory that is commonly used in digital devices such as USB drives, solid-state drives, and digital cameras. It is a type of EEPROM (Electrically Erasable Programmable Read-Only Memory) that allows data to be erased and reprogrammed in blocks instead of one byte at a time. Flash memory uses a floating gate transistor to store data, which allows it to retain information even when the power is turned off.

Flash memory is widely used in digital devices because of its high capacity, small size, and fast access times. It is also more durable than other types of memory, such as hard disk drives, because it has no moving parts. This makes it ideal for use in portable devices that may be subject to physical shock or vibration.

There are two types of flash memory: NOR flash and NAND flash. NOR flash is faster than NAND flash, but it has lower density and higher cost per bit. NOR flash is typically used for code storage, such as firmware or boot code, because it provides faster access times. NAND flash has higher density and lower cost per bit, which makes it ideal for data storage applications.

Flash memory has a limited lifespan, as it can only be erased and reprogrammed a limited number of times. This is because the process of erasing and reprogramming the memory causes wear and tear on the floating gate transistor. However, modern flash memory devices have a sophisticated wear-leveling algorithm that distributes writes evenly across the memory, which extends the lifespan of the device.