VFBGA Flash Memory 2,400+

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Screening Level	Terminal Form	Parallel or Serial	Operating Mode	Sector Size (Words)	Maximum Supply Current	No. of Words	Nominal Supply Voltage / Vsup (V)	Toggle Bit	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Alternate Memory Width	Sub-Category	Minimum Data Retention Time	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	No. of Sectors/Size	Command User Interface	Terminal Finish	Ready or Busy	Terminal Position	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Endurance	Width	Qualification	Boot Block	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	Page Size (words)	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Type	Maximum Standby Current	Length	Common Flash Interface	Maximum Access Time	Programming Voltage (V)	Data Polling
M58LR128HB85ZB5E	STMicroelectronics	FLASH	COMMERCIAL EXTENDED	56	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	16K,64K	55 mA	8388608 words	1.8	NO	1.8	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA56,7X8,30		Flash Memories		.75 mm	85 Cel		8MX16	8M	-25 Cel	4,127	YES			BOTTOM	R-PBGA-B56		2 V	1 mm		7.7 mm	Not Qualified	BOTTOM	134217728 bit	1.7 V	SYNCHRONOUS BURST MODE OPERATION POSSIBLE	4		NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.00005 Amp	9 mm	YES	85 ns	1.8	NO
M58LR128GT85ZB5F	STMicroelectronics	FLASH	OTHER	56	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	16K,64K	52 mA	8388608 words	1.8	NO	1.8	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA56,7X8,30		Flash Memories		.75 mm	85 Cel		8MX16	8M	-25 Cel	4,127	YES			BOTTOM	R-PBGA-B56		2 V	1 mm		7.7 mm	Not Qualified	TOP	134217728 bit	1.7 V		8		NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.000005 Amp	9 mm	YES	85 ns	1.8	NO
M58LR128FT85ZB6F	STMicroelectronics	FLASH	INDUSTRIAL	56	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	16K,64K	27 mA	8388608 words	1.8	NO	1.8	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA56,7X8,30		Flash Memories		.75 mm	85 Cel		8MX16	8M	-40 Cel	4,127	YES	TIN SILVER COPPER		BOTTOM	R-PBGA-B56		2 V	1 mm		7.7 mm	Not Qualified	TOP	134217728 bit	1.7 V	SYNCHRONOUS BURST MODE OPERATION POSSIBLE	4	e1			NOR TYPE	.000005 Amp	9 mm	YES	85 ns	1.8	NO
M58LR128GL90ZB5U	STMicroelectronics	FLASH	COMMERCIAL EXTENDED	44	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS			8388608 words	1.8			16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH					.5 mm	85 Cel		8MX16	8M	-25 Cel					BOTTOM	R-PBGA-B44		2 V	1 mm		9 mm	Not Qualified	BOTTOM	134217728 bit	1.7 V						NOR TYPE		7.7 mm		85 ns	1.8
M58LR128FB85ZB6E	STMicroelectronics	FLASH	INDUSTRIAL	56	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	16K,64K	47 mA	8388608 words	1.8	NO	1.8	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA56,7X8,30		Flash Memories		.75 mm	85 Cel		8MX16	8M	-40 Cel	4,127	YES	TIN SILVER COPPER		BOTTOM	R-PBGA-B56		2 V	1 mm		7.7 mm	Not Qualified	BOTTOM	134217728 bit	1.7 V	SYNCHRONOUS BURST MODE OPERATION POSSIBLE	4	e1			NOR TYPE	.000005 Amp	9 mm	YES	85 ns	1.8	NO
M58LR128GU85ZC5E	STMicroelectronics	FLASH	COMMERCIAL EXTENDED	44	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS			16777216 words	1.8			16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH					.5 mm	85 Cel		16MX16	16M	-25 Cel					BOTTOM	R-PBGA-B44		2 V	1 mm		8 mm	Not Qualified	TOP	268435456 bit	1.7 V						NOR TYPE		10 mm		90 ns	1.8
M58LR128GT85ZB5T	STMicroelectronics	FLASH	OTHER	56	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	16K,64K	52 mA	8388608 words	1.8	NO	1.8	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA56,7X8,30		Flash Memories		.75 mm	85 Cel		8MX16	8M	-25 Cel	4,127	YES	TIN LEAD		BOTTOM	R-PBGA-B56		2 V	1 mm		7.7 mm	Not Qualified	TOP	134217728 bit	1.7 V		8	e0			NOR TYPE	.000005 Amp	9 mm	YES	85 ns	1.8	NO
M58LR256GL85ZC5U	STMicroelectronics	FLASH	COMMERCIAL EXTENDED	44	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS			16777216 words	1.8			16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH					.5 mm	85 Cel		16MX16	16M	-25 Cel					BOTTOM	R-PBGA-B44		2 V	1 mm		8 mm	Not Qualified	BOTTOM	268435456 bit	1.7 V						NOR TYPE		10 mm		90 ns	1.8
M58LR256GU85ZC5U	STMicroelectronics	FLASH	COMMERCIAL EXTENDED	44	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS			16777216 words	1.8			16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH					.5 mm	85 Cel		16MX16	16M	-25 Cel					BOTTOM	R-PBGA-B44		2 V	1 mm		8 mm	Not Qualified	TOP	268435456 bit	1.7 V						NOR TYPE		10 mm		90 ns	1.8
M58LR128FB85ZB6	STMicroelectronics	FLASH	INDUSTRIAL	56	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	16K,64K	47 mA	8388608 words	1.8	NO	1.8	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA56,7X8,30		Flash Memories		.75 mm	85 Cel		8MX16	8M	-40 Cel	4,127	YES	TIN LEAD		BOTTOM	R-PBGA-B56		2 V	1 mm		7.7 mm	Not Qualified	BOTTOM	134217728 bit	1.7 V	SYNCHRONOUS BURST MODE OPERATION POSSIBLE	4	e0			NOR TYPE	.000005 Amp	9 mm	YES	85 ns	1.8	NO
M58LR128HB70ZB5E	STMicroelectronics	FLASH	COMMERCIAL EXTENDED	56	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	16K,64K	55 mA	8388608 words	1.8	NO	1.8	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA56,7X8,30		Flash Memories		.75 mm	85 Cel		8MX16	8M	-25 Cel	4,127	YES			BOTTOM	R-PBGA-B56		2 V	1 mm		7.7 mm	Not Qualified	BOTTOM	134217728 bit	1.7 V	SYNCHRONOUS BURST MODE OPERATION POSSIBLE	4		NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.00005 Amp	9 mm	YES	70 ns	1.8	NO
M58LR128GL90ZC5E	STMicroelectronics	FLASH	COMMERCIAL EXTENDED	44	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS			16777216 words	1.8			16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH					.5 mm	85 Cel		16MX16	16M	-25 Cel					BOTTOM	R-PBGA-B44		2 V	1 mm		8 mm	Not Qualified	BOTTOM	268435456 bit	1.7 V						NOR TYPE		10 mm		90 ns	1.8
M58LR128GU90ZC5E	STMicroelectronics	FLASH	COMMERCIAL EXTENDED	44	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS			16777216 words	1.8			16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH					.5 mm	85 Cel		16MX16	16M	-25 Cel					BOTTOM	R-PBGA-B44		2 V	1 mm		8 mm	Not Qualified	TOP	268435456 bit	1.7 V						NOR TYPE		10 mm		90 ns	1.8
M58LR128FB95ZB6E	STMicroelectronics	FLASH	INDUSTRIAL	56	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	16K,64K	47 mA	8388608 words	1.8	NO	1.8	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA56,7X8,30		Flash Memories		.75 mm	85 Cel		8MX16	8M	-40 Cel	4,127	YES	TIN SILVER COPPER		BOTTOM	R-PBGA-B56		2 V	1 mm		7.7 mm	Not Qualified	BOTTOM	134217728 bit	1.7 V	SYNCHRONOUS BURST MODE OPERATION POSSIBLE	4	e1			NOR TYPE	.000005 Amp	9 mm	YES	95 ns	1.8	NO
M58LW128H115ZB1E	STMicroelectronics	FLASH	COMMERCIAL	56	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	64K	30 mA	8388608 words	3	NO	1.8/3.6,3/3.3	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA56,7X8,30		Flash Memories		.75 mm	70 Cel		8MX16	8M	0 Cel	128	YES			BOTTOM	R-PBGA-B56		3.6 V	1 mm		9 mm	Not Qualified		134217728 bit	2.7 V	SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE	8		NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.00004 Amp	11 mm	YES	115 ns	3	NO
M58LR128FT95ZB6F	STMicroelectronics	FLASH	INDUSTRIAL	56	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	16K,64K	27 mA	8388608 words	1.8	NO	1.8	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA56,7X8,30		Flash Memories		.75 mm	85 Cel		8MX16	8M	-40 Cel	4,127	YES	TIN SILVER COPPER		BOTTOM	R-PBGA-B56		2 V	1 mm		7.7 mm	Not Qualified	TOP	134217728 bit	1.7 V	SYNCHRONOUS BURST MODE OPERATION POSSIBLE	4	e1			NOR TYPE	.000005 Amp	9 mm	YES	95 ns	1.8	NO
M58LR128GL85ZC5U	STMicroelectronics	FLASH	COMMERCIAL EXTENDED	44	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS			16777216 words	1.8			16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH					.5 mm	85 Cel		16MX16	16M	-25 Cel					BOTTOM	R-PBGA-B44		2 V	1 mm		8 mm	Not Qualified	BOTTOM	268435456 bit	1.7 V						NOR TYPE		10 mm		90 ns	1.8
M58LR128FT85ZB6E	STMicroelectronics	FLASH	INDUSTRIAL	56	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	16K,64K	27 mA	8388608 words	1.8	NO	1.8	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA56,7X8,30		Flash Memories		.75 mm	85 Cel		8MX16	8M	-40 Cel	4,127	YES	TIN SILVER COPPER		BOTTOM	R-PBGA-B56		2 V	1 mm		7.7 mm	Not Qualified	TOP	134217728 bit	1.7 V	SYNCHRONOUS BURST MODE OPERATION POSSIBLE	4	e1			NOR TYPE	.000005 Amp	9 mm	YES	85 ns	1.8	NO
M58LR128HT85ZB5E	STMicroelectronics	FLASH	COMMERCIAL EXTENDED	56	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	16K,64K	55 mA	8388608 words	1.8	NO	1.8	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA56,7X8,30		Flash Memories		.75 mm	85 Cel		8MX16	8M	-25 Cel	4,127	YES			BOTTOM	R-PBGA-B56		2 V	1 mm		7.7 mm	Not Qualified	TOP	134217728 bit	1.7 V	SYNCHRONOUS BURST MODE OPERATION POSSIBLE	4		NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.00005 Amp	9 mm	YES	85 ns	1.8	NO
S29GL256S90GHI023	Infineon Technologies	FLASH		56	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	128K	100 mA	33554432 words	3	YES		8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA56,8X8,32	1		2	.8 mm	85 Cel	3-STATE	32MX8	32M	-40 Cel	256	YES		YES	BOTTOM	R-PBGA-B56		3.6 V	1 mm	100000 Write/Erase Cycles	7 mm			268435456 bit	2.7 V	20 YEARS DATA RETENTION; 10000 ERASE/PROGRAM CYCLES	32				NAND TYPE	.0001 Amp	9 mm	YES	90 ns	3	YES
S29GL128S10GHB010	Infineon Technologies	FLASH		56	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100; TS 16949	BALL	PARALLEL	ASYNCHRONOUS	128K	100 mA	16777216 words	3	YES		8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA56,8X8,32	1		2	.8 mm	105 Cel	3-STATE	16MX8	16M	-40 Cel	128	YES		YES	BOTTOM	R-PBGA-B56	3	3.6 V	1 mm	100000 Write/Erase Cycles	7 mm		BOTTOM/TOP	134217728 bit	2.7 V	20 YEARS DATA RETENTION; 10000 ERASE/PROGRAM CYCLES	32				NAND TYPE	.0002 Amp	9 mm	YES	100 ns	3	YES
S29GL512S11GHI020	Infineon Technologies	FLASH		56	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	128K	100 mA	67108864 words	3	YES		8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA56,8X8,32	1		2	.8 mm	85 Cel	3-STATE	64MX8	64M	-40 Cel	512	YES		YES	BOTTOM	R-PBGA-B56	3	3.6 V	1 mm	100000 Write/Erase Cycles	7 mm		BOTTOM/TOP	536870912 bit	2.7 V	20 YEARS DATA RETENTION; 10000 ERASE/PROGRAM CYCLES	32				NAND TYPE	.0001 Amp	9 mm	YES	110 ns	3	YES
S29GL512S10GHI013	Infineon Technologies	FLASH		56	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	128K	100 mA	67108864 words	3	YES		8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA56,8X8,32	1		2	.8 mm	85 Cel	3-STATE	64MX8	64M	-40 Cel	512	YES		YES	BOTTOM	R-PBGA-B56		3.6 V	1 mm	100000 Write/Erase Cycles	7 mm		BOTTOM/TOP	536870912 bit	2.7 V	20 YEARS DATA RETENTION; 10000 ERASE/PROGRAM CYCLES	32				NAND TYPE	.0001 Amp	9 mm	YES	100 ns	3	YES
S29GL256S10GHB013	Infineon Technologies	FLASH		56	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100; TS 16949	BALL	PARALLEL	ASYNCHRONOUS	128K	100 mA	33554432 words	3	YES		8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA56,8X8,32	1		2	.8 mm	105 Cel	3-STATE	32MX8	32M	-40 Cel	256	YES		YES	BOTTOM	R-PBGA-B56	3	3.6 V	1 mm	100000 Write/Erase Cycles	7 mm			268435456 bit	2.7 V	20 YEARS DATA RETENTION; 10000 ERASE/PROGRAM CYCLES	32				NAND TYPE	.0002 Amp	9 mm	YES	100 ns	3	YES
S29GL128S90GHI020	Infineon Technologies	FLASH		56	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	128K	100 mA	16777216 words	3	YES		8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA56,8X8,32	1		2	.8 mm	85 Cel	3-STATE	16MX8	16M	-40 Cel	128	YES	TIN SILVER COPPER	YES	BOTTOM	R-PBGA-B56	3	3.6 V	1 mm	100000 Write/Erase Cycles	7 mm		BOTTOM/TOP	134217728 bit	2.7 V	20 YEARS DATA RETENTION; 10000 ERASE/PROGRAM CYCLES	32	e1	30	260	NAND TYPE	.0001 Amp	9 mm	YES	90 ns	3	YES
S29GL128S10GHB013	Infineon Technologies	FLASH		56	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100; TS 16949	BALL	PARALLEL	ASYNCHRONOUS	128K	100 mA	16777216 words	3	YES		8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA56,8X8,32	1		2	.8 mm	105 Cel	3-STATE	16MX8	16M	-40 Cel	128	YES		YES	BOTTOM	R-PBGA-B56	3	3.6 V	1 mm	100000 Write/Erase Cycles	7 mm		BOTTOM/TOP	134217728 bit	2.7 V	20 YEARS DATA RETENTION; 10000 ERASE/PROGRAM CYCLES	32				NAND TYPE	.0002 Amp	9 mm	YES	100 ns	3	YES
S29GL512S12GHBV13	Infineon Technologies	FLASH		56	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100; TS 16949	BALL	PARALLEL	ASYNCHRONOUS	128K	100 mA	67108864 words	3	YES		8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA56,8X8,32	1		2	.8 mm	105 Cel	3-STATE	64MX8	64M	-40 Cel	512	YES		YES	BOTTOM	R-PBGA-B56		3.6 V	1 mm	100000 Write/Erase Cycles	7 mm		BOTTOM/TOP	536870912 bit	2.7 V	20 YEARS DATA RETENTION; 10000 ERASE/PROGRAM CYCLES	32				NAND TYPE	.0002 Amp	9 mm	YES	120 ns	3	YES
S29GL128S90GHI013	Infineon Technologies	FLASH		56	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	128K	100 mA	16777216 words	3	YES		8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA56,8X8,32	1		2	.8 mm	85 Cel	3-STATE	16MX8	16M	-40 Cel	128	YES	TIN SILVER COPPER	YES	BOTTOM	R-PBGA-B56	3	3.6 V	1 mm	100000 Write/Erase Cycles	7 mm		BOTTOM/TOP	134217728 bit	2.7 V	20 YEARS DATA RETENTION; 10000 ERASE/PROGRAM CYCLES	32	e1	30	260	NAND TYPE	.0001 Amp	9 mm	YES	90 ns	3	YES
S29GL128S90GHI010	Infineon Technologies	FLASH		56	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	128K	100 mA	16777216 words	3	YES		8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA56,8X8,32	1		2	.8 mm	85 Cel	3-STATE	16MX8	16M	-40 Cel	128	YES	TIN SILVER COPPER	YES	BOTTOM	R-PBGA-B56	3	3.6 V	1 mm	100000 Write/Erase Cycles	7 mm		BOTTOM/TOP	134217728 bit	2.7 V	20 YEARS DATA RETENTION; 10000 ERASE/PROGRAM CYCLES	32	e1	30	260	NAND TYPE	.0001 Amp	9 mm	YES	90 ns	3	YES
S29GL512S12GHBV23	Infineon Technologies	FLASH		56	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100; TS 16949	BALL	PARALLEL	ASYNCHRONOUS	128K	100 mA	67108864 words	3	YES		8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA56,8X8,32	1		2	.8 mm	105 Cel	3-STATE	64MX8	64M	-40 Cel	512	YES		YES	BOTTOM	R-PBGA-B56		3.6 V	1 mm	100000 Write/Erase Cycles	7 mm		BOTTOM/TOP	536870912 bit	2.7 V	20 YEARS DATA RETENTION; 10000 ERASE/PROGRAM CYCLES	32				NAND TYPE	.0002 Amp	9 mm	YES	120 ns	3	YES
S29GL512S11GHI023	Infineon Technologies	FLASH		56	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	128K	100 mA	67108864 words	3	YES		8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA56,8X8,32	1		2	.8 mm	85 Cel	3-STATE	64MX8	64M	-40 Cel	512	YES		YES	BOTTOM	R-PBGA-B56	3	3.6 V	1 mm	100000 Write/Erase Cycles	7 mm		BOTTOM/TOP	536870912 bit	2.7 V	20 YEARS DATA RETENTION; 10000 ERASE/PROGRAM CYCLES	32				NAND TYPE	.0001 Amp	9 mm	YES	110 ns	3	YES
S29GL512S12GHBV10	Infineon Technologies	FLASH		56	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100; TS 16949	BALL	PARALLEL	ASYNCHRONOUS	128K	100 mA	67108864 words	3	YES		8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA56,8X8,32	1		2	.8 mm	105 Cel	3-STATE	64MX8	64M	-40 Cel	512	YES		YES	BOTTOM	R-PBGA-B56		3.6 V	1 mm	100000 Write/Erase Cycles	7 mm		BOTTOM/TOP	536870912 bit	2.7 V	20 YEARS DATA RETENTION; 10000 ERASE/PROGRAM CYCLES	32				NAND TYPE	.0002 Amp	9 mm	YES	120 ns	3	YES
S29GL512S10GHI010	Infineon Technologies	FLASH		56	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	128K	100 mA	67108864 words	3	YES		8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA56,8X8,32	1		2	.8 mm	85 Cel	3-STATE	64MX8	64M	-40 Cel	512	YES		YES	BOTTOM	R-PBGA-B56	3	3.6 V	1 mm	100000 Write/Erase Cycles	7 mm		BOTTOM/TOP	536870912 bit	2.7 V	20 YEARS DATA RETENTION; 10000 ERASE/PROGRAM CYCLES	32				NAND TYPE	.0001 Amp	9 mm	YES	100 ns	3	YES
S29GL512S11GHB010	Infineon Technologies	FLASH		56	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100; TS 16949	BALL	PARALLEL	ASYNCHRONOUS	128K	100 mA	67108864 words	3	YES		8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA56,8X8,32	1		2	.8 mm	105 Cel	3-STATE	64MX8	64M	-40 Cel	512	YES		YES	BOTTOM	R-PBGA-B56		3.6 V	1 mm	100000 Write/Erase Cycles	7 mm		BOTTOM/TOP	536870912 bit	2.7 V	20 YEARS DATA RETENTION; 10000 ERASE/PROGRAM CYCLES	32				NAND TYPE	.0002 Amp	9 mm	YES	110 ns	3	YES
S29GL256S10GHB010	Infineon Technologies	FLASH		56	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100; TS 16949	BALL	PARALLEL	ASYNCHRONOUS	128K	100 mA	33554432 words	3	YES		8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA56,8X8,32	1		2	.8 mm	105 Cel	3-STATE	32MX8	32M	-40 Cel	256	YES		YES	BOTTOM	R-PBGA-B56	3	3.6 V	1 mm	100000 Write/Erase Cycles	7 mm			268435456 bit	2.7 V	20 YEARS DATA RETENTION; 10000 ERASE/PROGRAM CYCLES	32				NAND TYPE	.0002 Amp	9 mm	YES	100 ns	3	YES
S29GL128S10GHB023	Infineon Technologies	FLASH		56	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100; TS 16949	BALL	PARALLEL	ASYNCHRONOUS	128K	100 mA	16777216 words	3	YES		8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA56,8X8,32	1		2	.8 mm	105 Cel	3-STATE	16MX8	16M	-40 Cel	128	YES		YES	BOTTOM	R-PBGA-B56		3.6 V	1 mm	100000 Write/Erase Cycles	7 mm		BOTTOM/TOP	134217728 bit	2.7 V	20 YEARS DATA RETENTION; 10000 ERASE/PROGRAM CYCLES	32				NAND TYPE	.0002 Amp	9 mm	YES	100 ns	3	YES
S29GL128S90GHI023	Infineon Technologies	FLASH		56	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	128K	100 mA	16777216 words	3	YES		8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA56,8X8,32	1		2	.8 mm	85 Cel	3-STATE	16MX8	16M	-40 Cel	128	YES	TIN SILVER COPPER	YES	BOTTOM	R-PBGA-B56	3	3.6 V	1 mm	100000 Write/Erase Cycles	7 mm		BOTTOM/TOP	134217728 bit	2.7 V	20 YEARS DATA RETENTION; 10000 ERASE/PROGRAM CYCLES	32	e1	30	260	NAND TYPE	.0001 Amp	9 mm	YES	90 ns	3	YES
S29GL512S11GHI010	Infineon Technologies	FLASH		56	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	128K	100 mA	67108864 words	3	YES		8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA56,8X8,32	1		2	.8 mm	85 Cel	3-STATE	64MX8	64M	-40 Cel	512	YES		YES	BOTTOM	R-PBGA-B56		3.6 V	1 mm	100000 Write/Erase Cycles	7 mm		BOTTOM/TOP	536870912 bit	2.7 V	20 YEARS DATA RETENTION; 10000 ERASE/PROGRAM CYCLES	32				NAND TYPE	.0001 Amp	9 mm	YES	110 ns	3	YES
S29GL256S10GHB023	Infineon Technologies	FLASH		56	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100; TS 16949	BALL	PARALLEL	ASYNCHRONOUS	128K	100 mA	33554432 words	3	YES		8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA56,8X8,32	1		2	.8 mm	105 Cel	3-STATE	32MX8	32M	-40 Cel	256	YES		YES	BOTTOM	R-PBGA-B56		3.6 V	1 mm	100000 Write/Erase Cycles	7 mm			268435456 bit	2.7 V	20 YEARS DATA RETENTION; 10000 ERASE/PROGRAM CYCLES	32				NAND TYPE	.0002 Amp	9 mm	YES	100 ns	3	YES
S29GL512S10GHI023	Infineon Technologies	FLASH		56	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	128K	100 mA	67108864 words	3	YES		8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA56,8X8,32	1		2	.8 mm	85 Cel	3-STATE	64MX8	64M	-40 Cel	512	YES	TIN SILVER COPPER	YES	BOTTOM	R-PBGA-B56	3	3.6 V	1 mm	100000 Write/Erase Cycles	7 mm		BOTTOM/TOP	536870912 bit	2.7 V	20 YEARS DATA RETENTION; 10000 ERASE/PROGRAM CYCLES	32	e1			NAND TYPE	.0001 Amp	9 mm	YES	100 ns	3	YES
S29GL256S10GHB020	Infineon Technologies	FLASH		56	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100; TS 16949	BALL	PARALLEL	ASYNCHRONOUS	128K	100 mA	33554432 words	3	YES		8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA56,8X8,32	1		2	.8 mm	105 Cel	3-STATE	32MX8	32M	-40 Cel	256	YES		YES	BOTTOM	R-PBGA-B56		3.6 V	1 mm	100000 Write/Erase Cycles	7 mm			268435456 bit	2.7 V	20 YEARS DATA RETENTION; 10000 ERASE/PROGRAM CYCLES	32				NAND TYPE	.0002 Amp	9 mm	YES	100 ns	3	YES
S29GL512S11GHB023	Infineon Technologies	FLASH		56	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100; TS 16949	BALL	PARALLEL	ASYNCHRONOUS	128K	100 mA	67108864 words	3	YES		8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA56,8X8,32	1		2	.8 mm	105 Cel	3-STATE	64MX8	64M	-40 Cel	512	YES		YES	BOTTOM	R-PBGA-B56	3	3.6 V	1 mm	100000 Write/Erase Cycles	7 mm		BOTTOM/TOP	536870912 bit	2.7 V	20 YEARS DATA RETENTION; 10000 ERASE/PROGRAM CYCLES	32				NAND TYPE	.0002 Amp	9 mm	YES	110 ns	3	YES
S29GL512S11GHI013	Infineon Technologies	FLASH		56	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	128K	100 mA	67108864 words	3	YES		8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA56,8X8,32	1		2	.8 mm	85 Cel	3-STATE	64MX8	64M	-40 Cel	512	YES		YES	BOTTOM	R-PBGA-B56		3.6 V	1 mm	100000 Write/Erase Cycles	7 mm		BOTTOM/TOP	536870912 bit	2.7 V	20 YEARS DATA RETENTION; 10000 ERASE/PROGRAM CYCLES	32				NAND TYPE	.0001 Amp	9 mm	YES	110 ns	3	YES
S29GL032N90BFI032	Infineon Technologies	FLASH		48	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	8K,64K	60 mA	2097152 words	3	YES		16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA48,6X8,32	8		2	.8 mm	85 Cel	3-STATE	2MX16	2M	-40 Cel	8,63	YES	TIN SILVER COPPER	YES	BOTTOM	R-PBGA-B48	3	3.6 V	1 mm	100000 Write/Erase Cycles	6.15 mm		TOP	33554432 bit	2.7 V		8/16	e1	40	260	NOR TYPE	.000005 Amp	8.15 mm	YES	90 ns	3	YES
S29GL256S90GHI013	Infineon Technologies	FLASH		56	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	128K	100 mA	33554432 words	3	YES		8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA56,8X8,32	1		2	.8 mm	85 Cel	3-STATE	32MX8	32M	-40 Cel	256	YES		YES	BOTTOM	R-PBGA-B56		3.6 V	1 mm	100000 Write/Erase Cycles	7 mm			268435456 bit	2.7 V	20 YEARS DATA RETENTION; 10000 ERASE/PROGRAM CYCLES	32				NAND TYPE	.0001 Amp	9 mm	YES	90 ns	3	YES
S29GL512S12GHBV20	Infineon Technologies	FLASH		56	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100; TS 16949	BALL	PARALLEL	ASYNCHRONOUS	128K	100 mA	67108864 words	3	YES		8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA56,8X8,32	1		2	.8 mm	105 Cel	3-STATE	64MX8	64M	-40 Cel	512	YES		YES	BOTTOM	R-PBGA-B56		3.6 V	1 mm	100000 Write/Erase Cycles	7 mm		BOTTOM/TOP	536870912 bit	2.7 V	20 YEARS DATA RETENTION; 10000 ERASE/PROGRAM CYCLES	32				NAND TYPE	.0002 Amp	9 mm	YES	120 ns	3	YES
S29GL256S90GHI010	Infineon Technologies	FLASH		56	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	128K	100 mA	33554432 words	3	YES		8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA56,8X8,32	1		2	.8 mm	85 Cel	3-STATE	32MX8	32M	-40 Cel	256	YES		YES	BOTTOM	R-PBGA-B56	3	3.6 V	1 mm	100000 Write/Erase Cycles	7 mm			268435456 bit	2.7 V	20 YEARS DATA RETENTION; 10000 ERASE/PROGRAM CYCLES	32				NAND TYPE	.0001 Amp	9 mm	YES	90 ns	3	YES
S29GL512S11GHB013	Infineon Technologies	FLASH		56	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100; TS 16949	BALL	PARALLEL	ASYNCHRONOUS	128K	100 mA	67108864 words	3	YES		8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA56,8X8,32	1		2	.8 mm	105 Cel	3-STATE	64MX8	64M	-40 Cel	512	YES		YES	BOTTOM	R-PBGA-B56		3.6 V	1 mm	100000 Write/Erase Cycles	7 mm		BOTTOM/TOP	536870912 bit	2.7 V	20 YEARS DATA RETENTION; 10000 ERASE/PROGRAM CYCLES	32				NAND TYPE	.0002 Amp	9 mm	YES	110 ns	3	YES

Flash Memory

Flash memory is a type of non-volatile computer memory that is commonly used in digital devices such as USB drives, solid-state drives, and digital cameras. It is a type of EEPROM (Electrically Erasable Programmable Read-Only Memory) that allows data to be erased and reprogrammed in blocks instead of one byte at a time. Flash memory uses a floating gate transistor to store data, which allows it to retain information even when the power is turned off.

Flash memory is widely used in digital devices because of its high capacity, small size, and fast access times. It is also more durable than other types of memory, such as hard disk drives, because it has no moving parts. This makes it ideal for use in portable devices that may be subject to physical shock or vibration.

There are two types of flash memory: NOR flash and NAND flash. NOR flash is faster than NAND flash, but it has lower density and higher cost per bit. NOR flash is typically used for code storage, such as firmware or boot code, because it provides faster access times. NAND flash has higher density and lower cost per bit, which makes it ideal for data storage applications.

Flash memory has a limited lifespan, as it can only be erased and reprogrammed a limited number of times. This is because the process of erasing and reprogramming the memory causes wear and tear on the floating gate transistor. However, modern flash memory devices have a sophisticated wear-leveling algorithm that distributes writes evenly across the memory, which extends the lifespan of the device.