VFBGA Flash Memory 2,400+

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Screening Level	Terminal Form	Parallel or Serial	Operating Mode	Sector Size (Words)	Maximum Supply Current	No. of Words	Nominal Supply Voltage / Vsup (V)	Toggle Bit	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Alternate Memory Width	Sub-Category	Minimum Data Retention Time	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	No. of Sectors/Size	Command User Interface	Terminal Finish	Ready or Busy	Terminal Position	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Endurance	Width	Qualification	Maximum Write Cycle Time (tWC)	Boot Block	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	Page Size (words)	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Type	Maximum Standby Current	Length	Common Flash Interface	Maximum Access Time	Programming Voltage (V)	Data Polling
S29PL127J70BFI03	Infineon Technologies	FLASH	INDUSTRIAL	80	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS			8388608 words	3			16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH					.8 mm	85 Cel		8MX16	8M	-40 Cel					BOTTOM	R-PBGA-B80		3.6 V	1 mm		8 mm	Not Qualified		BOTTOM/TOP	134217728 bit	2.7 V	TOP AND BOTTOM BOOT BLOCK					NOR TYPE		11 mm		70 ns	3
S34ML02G104BHI003	Infineon Technologies	FLASH	INDUSTRIAL	63	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	64K	40 mA	134217728 words	3.3	NO	3/3.3	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA63,10X12,32		Flash Memories		.8 mm	85 Cel		128MX16	128M	-40 Cel	2K	YES		YES	BOTTOM	R-PBGA-B63		3.6 V	1 mm		9 mm	Not Qualified			2147483648 bit	2.7 V		1K		NOT SPECIFIED	NOT SPECIFIED	SLC NAND TYPE	.00005 Amp	11 mm		25 ns	3	NO
S29AL008J70BHN010	Infineon Technologies	FLASH	AUTOMOTIVE	48	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS			524288 words	3			16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH		8			.8 mm	125 Cel		512KX16	512K	-40 Cel					BOTTOM	R-PBGA-B48		3.6 V	1 mm		6.15 mm			TOP	8388608 bit	2.7 V				NOT SPECIFIED	NOT SPECIFIED	NOR TYPE		8.15 mm		70 ns	3
S29AS016J70BFI012	Infineon Technologies	FLASH	INDUSTRIAL	48	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	8K,64K	30 mA	1048576 words	1.8	YES	1.8	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA48,6X8,32	8	Flash Memories		.8 mm	85 Cel		1MX16	1M	-40 Cel	8,63	YES	TIN SILVER COPPER	YES	BOTTOM	R-PBGA-B48	3	1.95 V	1 mm		6.15 mm	Not Qualified		TOP	16777216 bit	1.65 V	TOP BOOT BLOCK		e1	40	260	NOR TYPE	.00003 Amp	8.15 mm	YES	70 ns	1.8	YES
S29PL127J65TFA061	Infineon Technologies	FLASH		64	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	PARALLEL	ASYNCHRONOUS	4K,32K	70 mA	8388608 words	3	YES		16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA64,10X12,32			20	.8 mm	85 Cel	3-STATE	8MX16	8M	-40 Cel	16,254	YES		YES	BOTTOM	R-PBGA-B64		3.6 V	1 mm	100000 Write/Erase Cycles	8 mm		.000065 ms	BOTTOM/TOP	134217728 bit	2.7 V	TOP AND BOTTOM BOOT BLOCK	8				NOR TYPE	.000005 Amp	11.6 mm	YES	65 ns	3	YES
S29AS008J70LFI13	Infineon Technologies	FLASH	INDUSTRIAL	53	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS			524288 words	1.8			16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH		8			.4 mm	85 Cel		512KX16	512K	-40 Cel					BOTTOM	R-PBGA-B53		1.95 V	.6 mm		2.51 mm	Not Qualified			8388608 bit	1.65 V								4.26 mm		70 ns	1.8
S29PL064J70BFA100	Infineon Technologies	FLASH		56	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	PARALLEL	ASYNCHRONOUS	4K,32K	70 mA	4194304 words	3	YES		16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA56,8X8,32			20	.8 mm	85 Cel	3-STATE	4MX16	4M	-40 Cel	16,126	YES		YES	BOTTOM	R-PBGA-B56		3.6 V	1 mm	100000 Write/Erase Cycles	7 mm		.00007 ms	BOTTOM/TOP	67108864 bit	2.7 V	TOP AND BOTTOM BOOT BLOCK	8				NOR TYPE	.000005 Amp	9 mm	YES	70 ns	3	YES
S29PL127J65BFI003	Infineon Technologies	FLASH	INDUSTRIAL	80	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	4K,32K	70 mA	8388608 words	3	YES	3/3.3	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA80,8X12,32		Flash Memories		.8 mm	85 Cel		8MX16	8M	-40 Cel	16,254	YES	TIN SILVER COPPER	YES	BOTTOM	R-PBGA-B80	3	3.6 V	1 mm		8 mm	Not Qualified		BOTTOM/TOP	134217728 bit	2.7 V	TOP AND BOTTOM BOOT BLOCK	8	e1	40	260	NOR TYPE	.000005 Amp	11 mm	YES	65 ns	3	YES
S29PL127J70TFW001	Infineon Technologies	FLASH	OTHER	80	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	4K,32K	70 mA	8388608 words	3	YES	3/3.3	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	TSSOP56,.8,20		Flash Memories		.8 mm	85 Cel		8MX16	8M	-25 Cel	16,254	YES	TIN SILVER COPPER	YES	BOTTOM	R-PBGA-B80	3	3.6 V	1 mm		8 mm	Not Qualified		BOTTOM/TOP	134217728 bit	2.7 V	TOP AND BOTTOM BOOT BLOCK	8	e1	40	260	NOR TYPE	.000005 Amp	11 mm	YES	70 ns	3	YES
S34MS04G100BHB010	Infineon Technologies	FLASH	INDUSTRIAL	63	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS			536870912 words	1.8			8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH					.8 mm	105 Cel		512MX8	512M	-40 Cel					BOTTOM	R-PBGA-B63		1.95 V	1 mm		9 mm				4294967296 bit	1.7 V						SLC NAND TYPE		11 mm			1.8
S29PL032J60BFW072	Infineon Technologies	FLASH		48	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	4K,32K	70 mA	2097152 words	3	YES		16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA48,6X8,32			20	.8 mm	85 Cel	3-STATE	2MX16	2M	-25 Cel	16,62	YES		YES	BOTTOM	R-PBGA-B48		3.6 V	1 mm	100000 Write/Erase Cycles	6.15 mm		.00006 ms	BOTTOM/TOP	33554432 bit	2.7 V	TOP AND BOTTOM BOOT BLOCK	8				NOR TYPE	.000005 Amp	8.15 mm	YES	60 ns	3	YES
S29PL32J55BFW15	Infineon Technologies	FLASH	OTHER	56	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS			2097152 words	3			16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH					.8 mm	85 Cel		2MX16	2M	-25 Cel					BOTTOM	R-PBGA-B56		3.6 V	1 mm		7 mm	Not Qualified		BOTTOM/TOP	33554432 bit	2.7 V						NOR TYPE		9 mm		55 ns	3
S29PL032J60BFI150	Infineon Technologies	FLASH	INDUSTRIAL	56	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	4K,32K	70 mA	2097152 words	3	YES	3/3.3	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA56,8X8,32		Flash Memories		.8 mm	85 Cel		2MX16	2M	-40 Cel	16,62	YES	TIN SILVER COPPER	YES	BOTTOM	R-PBGA-B56	3	3.6 V	1 mm		7 mm	Not Qualified		BOTTOM/TOP	33554432 bit	2.7 V	TOP AND BOTTOM BOOT BLOCK	8	e1	40	260	NOR TYPE	.000005 Amp	9 mm	YES	60 ns	3	YES
S29AL008J70BHN040	Infineon Technologies	FLASH	AUTOMOTIVE	48	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS			524288 words	3			16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH		8			.8 mm	125 Cel		512KX16	512K	-40 Cel					BOTTOM	R-PBGA-B48		3.6 V	1 mm		6.15 mm			BOTTOM	8388608 bit	2.7 V				NOT SPECIFIED	NOT SPECIFIED	NOR TYPE		8.15 mm		70 ns	3
S29PL127J65TFA062	Infineon Technologies	FLASH		64	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	PARALLEL	ASYNCHRONOUS	4K,32K	70 mA	8388608 words	3	YES		16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA64,10X12,32			20	.8 mm	85 Cel	3-STATE	8MX16	8M	-40 Cel	16,254	YES		YES	BOTTOM	R-PBGA-B64		3.6 V	1 mm	100000 Write/Erase Cycles	8 mm		.000065 ms	BOTTOM/TOP	134217728 bit	2.7 V	TOP AND BOTTOM BOOT BLOCK	8				NOR TYPE	.000005 Amp	11.6 mm	YES	65 ns	3	YES
S29PL127J65BFI02	Infineon Technologies	FLASH	INDUSTRIAL	80	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS	4K,32K	70 mA	8388608 words	3	YES	3/3.3	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA64,10X12,32		Flash Memories		.8 mm	85 Cel		8MX16	8M	-40 Cel	16,254	YES	TIN SILVER COPPER	YES	BOTTOM	R-PBGA-B80	3	3.6 V	1 mm		8 mm	Not Qualified		BOTTOM/TOP	134217728 bit	2.7 V	TOP AND BOTTOM BOOT BLOCK	8	e1	40	260	NOR TYPE	.000005 Amp	11 mm	YES	65 ns	3	YES
S29PL127J70TFI040	Infineon Technologies	FLASH		80	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	4K,32K	70 mA	8388608 words	3	YES		16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA80,8X12,32			20	.8 mm	85 Cel	3-STATE	8MX16	8M	-40 Cel	16,254	YES		YES	BOTTOM	R-PBGA-B80		3.6 V	1 mm	100000 Write/Erase Cycles	8 mm		.00007 ms	BOTTOM/TOP	134217728 bit	2.7 V	TOP AND BOTTOM BOOT BLOCK	8				NOR TYPE	.000005 Amp	11 mm	YES	70 ns	3	YES
S34ML01G104BHB003	Infineon Technologies	FLASH	INDUSTRIAL	63	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS			67108864 words	3.3			16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH					.8 mm	105 Cel		64MX16	64M	-40 Cel					BOTTOM	R-PBGA-B63		3.6 V	1 mm		9 mm				1073741824 bit	2.7 V				NOT SPECIFIED	NOT SPECIFIED	SLC NAND TYPE		11 mm			3
S29PL032J70BFA070	Infineon Technologies	FLASH		48	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	PARALLEL	ASYNCHRONOUS	4K,32K	70 mA	2097152 words	3	YES		16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA48,6X8,32			20	.8 mm	85 Cel	3-STATE	2MX16	2M	-40 Cel	16,62	YES		YES	BOTTOM	R-PBGA-B48	3	3.6 V	1 mm	100000 Write/Erase Cycles	6.15 mm		.00007 ms	BOTTOM/TOP	33554432 bit	2.7 V	TOP AND BOTTOM BOOT BLOCK	8				NOR TYPE	.000005 Amp	8.15 mm	YES	70 ns	3	YES
S29PL127J70BFA063	Infineon Technologies	FLASH		64	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	PARALLEL	ASYNCHRONOUS	4K,32K	70 mA	8388608 words	3	YES		16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA64,10X12,32			20	.8 mm	85 Cel	3-STATE	8MX16	8M	-40 Cel	16,254	YES		YES	BOTTOM	R-PBGA-B64		3.6 V	1 mm	100000 Write/Erase Cycles	8 mm		.00007 ms	BOTTOM/TOP	134217728 bit	2.7 V	TOP AND BOTTOM BOOT BLOCK	8				NOR TYPE	.000005 Amp	11.6 mm	YES	70 ns	3	YES
S29PL127J70TFI001	Infineon Technologies	FLASH	INDUSTRIAL	80	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	4K,32K	70 mA	8388608 words	3	YES	3/3.3	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	TSSOP56,.8,20		Flash Memories		.8 mm	85 Cel		8MX16	8M	-40 Cel	16,254	YES	TIN SILVER COPPER	YES	BOTTOM	R-PBGA-B80	3	3.6 V	1 mm		8 mm	Not Qualified		BOTTOM/TOP	134217728 bit	2.7 V	TOP AND BOTTOM BOOT BLOCK	8	e1	40	260	NOR TYPE	.000005 Amp	11 mm	YES	70 ns	3	YES
S29PL127J60TFA060	Infineon Technologies	FLASH		64	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	PARALLEL	ASYNCHRONOUS	4K,32K	70 mA	8388608 words	3	YES		16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA64,10X12,32			20	.8 mm	85 Cel	3-STATE	8MX16	8M	-40 Cel	16,254	YES		YES	BOTTOM	R-PBGA-B64		3.6 V	1 mm	100000 Write/Erase Cycles	8 mm		.00006 ms	BOTTOM/TOP	134217728 bit	2.7 V	TOP AND BOTTOM BOOT BLOCK	8				NOR TYPE	.000005 Amp	11.6 mm	YES	60 ns	3	YES
S29AL008J70BAI020	Infineon Technologies	FLASH	INDUSTRIAL	48	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS			524288 words	3			16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH		8			.8 mm	85 Cel		512KX16	512K	-40 Cel			TIN LEAD		BOTTOM	R-PBGA-B48	3	3.6 V	1 mm		6.15 mm			BOTTOM	8388608 bit	2.7 V	BOTTOM BOOT BLOCK		e0					8.15 mm		70 ns	3
S29PL127J65TFI043	Infineon Technologies	FLASH		80	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	4K,32K	70 mA	8388608 words	3	YES		16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA80,8X12,32			20	.8 mm	85 Cel	3-STATE	8MX16	8M	-40 Cel	16,254	YES		YES	BOTTOM	R-PBGA-B80		3.6 V	1 mm	100000 Write/Erase Cycles	8 mm		.000065 ms	BOTTOM/TOP	134217728 bit	2.7 V	TOP AND BOTTOM BOOT BLOCK	8				NOR TYPE	.000005 Amp	11 mm	YES	65 ns	3	YES
S29AL016J55BHIR20	Infineon Technologies	FLASH	INDUSTRIAL	48	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS			1048576 words	3.3			16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH		8			.8 mm	85 Cel		1MX16	1M	-40 Cel					BOTTOM	R-PBGA-B48		3.6 V	1 mm		6.15 mm			BOTTOM	16777216 bit	3 V	BOTTOM BOOT BLOCK					NOR TYPE		8.15 mm		55 ns	3
S29PL256N65GFW000	Infineon Technologies	FLASH	OTHER	84	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS			16777216 words	3			16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH					.8 mm	85 Cel		16MX16	16M	-25 Cel			TIN SILVER COPPER		BOTTOM	R-PBGA-B84	3	3.1 V	1 mm		8 mm	Not Qualified			268435456 bit	2.7 V			e1			NOR TYPE		11.6 mm		65 ns	3
S29PL127J60TFI061	Infineon Technologies	FLASH		64	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	4K,32K	70 mA	8388608 words	3	YES		16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA64,10X12,32			20	.8 mm	85 Cel	3-STATE	8MX16	8M	-40 Cel	16,254	YES		YES	BOTTOM	R-PBGA-B64		3.6 V	1 mm	100000 Write/Erase Cycles	8 mm		.00006 ms	BOTTOM/TOP	134217728 bit	2.7 V	TOP AND BOTTOM BOOT BLOCK	8				NOR TYPE	.000005 Amp	11.6 mm	YES	60 ns	3	YES
S29JL064J70BFI003	Infineon Technologies	FLASH	INDUSTRIAL	48	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS			4194304 words	3			16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH		8			.8 mm	85 Cel		4MX16	4M	-40 Cel			TIN SILVER COPPER		BOTTOM	R-PBGA-B48	3	3.6 V	1 mm		6.15 mm			BOTTOM/TOP	67108864 bit	2.7 V	TOP BOOT BLOCK, BOTTOM BOOT BLOCK		e1			NOR TYPE		8.15 mm		70 ns	3
S34MS01G200GHA000	Infineon Technologies	FLASH	INDUSTRIAL	67	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	PARALLEL	ASYNCHRONOUS			134217728 words	1.8			8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH					.8 mm	85 Cel		128MX8	128M	-40 Cel					BOTTOM	R-PBGA-B67		1.95 V	1 mm		6.5 mm				1073741824 bit	1.7 V						SLC NAND TYPE		8 mm			1.8
S29AS016J90BHV040	Infineon Technologies	FLASH	INDUSTRIAL	48	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS			1048576 words	1.8			16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH		8			.8 mm	105 Cel		1MX16	1M	-40 Cel					BOTTOM	R-PBGA-B48		1.95 V	1 mm		6.15 mm			BOTTOM	16777216 bit	1.65 V						NOR TYPE		8.15 mm			1.8
S29PL064J70BFI103	Infineon Technologies	FLASH		56	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	4K,32K	70 mA	4194304 words	3	YES		16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA56,8X8,32			20	.8 mm	85 Cel	3-STATE	4MX16	4M	-40 Cel	16,126	YES		YES	BOTTOM	R-PBGA-B56		3.6 V	1 mm	100000 Write/Erase Cycles	7 mm		.00007 ms	BOTTOM/TOP	67108864 bit	2.7 V	TOP AND BOTTOM BOOT BLOCK	8				NOR TYPE	.000005 Amp	9 mm	YES	70 ns	3	YES
S29PL64J70BFI15	Infineon Technologies	FLASH	INDUSTRIAL	56	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS			4194304 words	3			16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH					.8 mm	85 Cel		4MX16	4M	-40 Cel					BOTTOM	R-PBGA-B56		3.6 V	1 mm		7 mm	Not Qualified		BOTTOM/TOP	67108864 bit	2.7 V						NOR TYPE		9 mm		70 ns	3
S34MS01G204GHV010	Infineon Technologies	FLASH	INDUSTRIAL	67	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS			67108864 words	1.8			16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH					.8 mm	105 Cel		64MX16	64M	-40 Cel					BOTTOM	R-PBGA-B67		1.95 V	1 mm		6.5 mm				1073741824 bit	1.7 V						SLC NAND TYPE		8 mm			1.8
S29AS016J70BFI010	Infineon Technologies	FLASH	INDUSTRIAL	48	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS			1048576 words	1.8			16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH		8			.8 mm	85 Cel		1MX16	1M	-40 Cel			TIN SILVER COPPER		BOTTOM	R-PBGA-B48	3	1.95 V	1 mm		6.15 mm			TOP	16777216 bit	1.65 V	TOP BOOT BLOCK		e1	40	260	NOR TYPE		8.15 mm		70 ns	1.8
S29PL064J70BFA072	Infineon Technologies	FLASH		48	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	PARALLEL	ASYNCHRONOUS	4K,32K	70 mA	4194304 words	3	YES		16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA48,6X8,32			20	.8 mm	85 Cel	3-STATE	4MX16	4M	-40 Cel	16,126	YES		YES	BOTTOM	R-PBGA-B48		3.6 V	1 mm	100000 Write/Erase Cycles	6.15 mm		.00007 ms	BOTTOM/TOP	67108864 bit	2.7 V	TOP AND BOTTOM BOOT BLOCK	8				NOR TYPE	.000005 Amp	8.15 mm	YES	70 ns	3	YES
S29PL032J65BFW151	Infineon Technologies	FLASH	OTHER	56	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS			2097152 words	3			16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH					.8 mm	85 Cel		2MX16	2M	-25 Cel			TIN SILVER COPPER		BOTTOM	R-PBGA-B56	3	3.6 V	1 mm		7 mm	Not Qualified		BOTTOM/TOP	33554432 bit	2.7 V			e1			NOR TYPE		9 mm		65 ns	3
S29PL127J60BFW002	Infineon Technologies	FLASH	OTHER	80	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	4K,32K	70 mA	8388608 words	3	YES	3/3.3	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA80,8X12,32		Flash Memories		.8 mm	85 Cel		8MX16	8M	-25 Cel	16,254	YES	TIN SILVER COPPER	YES	BOTTOM	R-PBGA-B80	3	3.6 V	1 mm		8 mm	Not Qualified		BOTTOM/TOP	134217728 bit	2.7 V	TOP AND BOTTOM BOOT BLOCK	8	e1	40	260	NOR TYPE	.000005 Amp	11 mm	YES	60 ns	3	YES
S34ML04G101BHI203	Infineon Technologies	FLASH	INDUSTRIAL	63	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS			536870912 words	3.3			8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH					.8 mm	85 Cel		512MX8	512M	-40 Cel					BOTTOM	R-PBGA-B63		3.6 V	1 mm		9 mm				4294967296 bit	2.7 V						SLC NAND TYPE		11 mm			3
S29PL127J65TFI062	Infineon Technologies	FLASH		64	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	4K,32K	70 mA	8388608 words	3	YES		16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA64,10X12,32			20	.8 mm	85 Cel	3-STATE	8MX16	8M	-40 Cel	16,254	YES		YES	BOTTOM	R-PBGA-B64		3.6 V	1 mm	100000 Write/Erase Cycles	8 mm		.000065 ms	BOTTOM/TOP	134217728 bit	2.7 V	TOP AND BOTTOM BOOT BLOCK	8				NOR TYPE	.000005 Amp	11.6 mm	YES	65 ns	3	YES
S29PL064J60BFW151	Infineon Technologies	FLASH	OTHER	56	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	4K,32K	70 mA	4194304 words	3	YES	3/3.3	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA56,8X8,32		Flash Memories		.8 mm	85 Cel		4MX16	4M	-25 Cel	16,126	YES	TIN SILVER COPPER	YES	BOTTOM	R-PBGA-B56	3	3.6 V	1 mm		7 mm	Not Qualified		BOTTOM/TOP	67108864 bit	2.7 V	TOP AND BOTTOM BOOT BLOCK	8	e1	40	260	NOR TYPE	.000005 Amp	9 mm	YES	60 ns	3	YES
S29PL032J55BFI071	Infineon Technologies	FLASH		48	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	4K,32K	70 mA	2097152 words	3	YES		16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA48,6X8,32			20	.8 mm	85 Cel	3-STATE	2MX16	2M	-40 Cel	16,62	YES		YES	BOTTOM	R-PBGA-B48		3.6 V	1 mm	100000 Write/Erase Cycles	6.15 mm		.000055 ms	BOTTOM/TOP	33554432 bit	2.7 V	TOP AND BOTTOM BOOT BLOCK	8				NOR TYPE	.000005 Amp	8.15 mm	YES	55 ns	3	YES
S29PL064J60BFW121	Infineon Technologies	FLASH	OTHER	48	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	4K,32K	70 mA	4194304 words	3	YES	3/3.3	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA48,6X8,32		Flash Memories		.8 mm	85 Cel		4MX16	4M	-25 Cel	16,126	YES	TIN SILVER COPPER	YES	BOTTOM	R-PBGA-B48	3	3.6 V	1 mm		6.15 mm	Not Qualified		BOTTOM/TOP	67108864 bit	2.7 V	TOP AND BOTTOM BOOT BLOCK	8	e1	40	260	NOR TYPE	.000005 Amp	8.15 mm	YES	60 ns	3	YES
S29PL64J70BFW12	Infineon Technologies	FLASH	OTHER	48	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS			4194304 words	3			16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH					.8 mm	85 Cel		4MX16	4M	-25 Cel					BOTTOM	R-PBGA-B48		3.6 V	1 mm		6.15 mm	Not Qualified		BOTTOM/TOP	67108864 bit	2.7 V						NOR TYPE		8.15 mm		70 ns	3
S29PL127J65BFI042	Infineon Technologies	FLASH		80	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	4K,32K	70 mA	8388608 words	3	YES		16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA80,8X12,32			20	.8 mm	85 Cel	3-STATE	8MX16	8M	-40 Cel	16,254	YES		YES	BOTTOM	R-PBGA-B80		3.6 V	1 mm	100000 Write/Erase Cycles	8 mm		.000065 ms	BOTTOM/TOP	134217728 bit	2.7 V	TOP AND BOTTOM BOOT BLOCK	8				NOR TYPE	.000005 Amp	11 mm	YES	65 ns	3	YES
S29PL127N70GAWW03	Infineon Technologies	FLASH	COMMERCIAL EXTENDED	64	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	32K,128K	55 mA	8388608 words	3	YES	3/3.3	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA64,10X12,32		Flash Memories		.8 mm	85 Cel		8MX16	8M	-25 Cel	8,62	YES		YES	BOTTOM	R-PBGA-B64		3.1 V	1 mm		8 mm	Not Qualified		BOTTOM/TOP	134217728 bit	2.7 V		8		NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.00004 Amp	11.6 mm	YES	70 ns	3	YES
S34ML02G204BHI000	Infineon Technologies	FLASH	INDUSTRIAL	63	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	64K	30 mA	134217728 words	3.3	NO	3/3.3	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA63,10X12,32		Flash Memories		.8 mm	85 Cel		128MX16	128M	-40 Cel	2K	YES		YES	BOTTOM	R-PBGA-B63		3.6 V	1 mm		9 mm	Not Qualified			2147483648 bit	2.7 V		1K				SLC NAND TYPE	.00005 Amp	11 mm		25 ns	3	NO
S29AS008J70LFI012	Infineon Technologies	FLASH	INDUSTRIAL	45	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	8K,64K	30 mA	524288 words	1.8	YES	1.8	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA45,9X11,16/8	8	Flash Memories		.4 mm	85 Cel		512KX16	512K	-40 Cel	8,15	YES		YES	BOTTOM	R-PBGA-B45		1.95 V	.6 mm		2.04 mm	Not Qualified		TOP	8388608 bit	1.65 V	TOP BOOT BLOCK					NOR TYPE	.00003 Amp	4.26 mm	YES	70 ns	1.8	YES
S34MS01G204BHV010	Infineon Technologies	FLASH	INDUSTRIAL	63	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS			67108864 words	1.8			16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH					.8 mm	105 Cel		64MX16	64M	-40 Cel					BOTTOM	R-PBGA-B63		1.95 V	1 mm		9 mm				1073741824 bit	1.7 V						SLC NAND TYPE		11 mm			1.8

Flash Memory

Flash memory is a type of non-volatile computer memory that is commonly used in digital devices such as USB drives, solid-state drives, and digital cameras. It is a type of EEPROM (Electrically Erasable Programmable Read-Only Memory) that allows data to be erased and reprogrammed in blocks instead of one byte at a time. Flash memory uses a floating gate transistor to store data, which allows it to retain information even when the power is turned off.

Flash memory is widely used in digital devices because of its high capacity, small size, and fast access times. It is also more durable than other types of memory, such as hard disk drives, because it has no moving parts. This makes it ideal for use in portable devices that may be subject to physical shock or vibration.

There are two types of flash memory: NOR flash and NAND flash. NOR flash is faster than NAND flash, but it has lower density and higher cost per bit. NOR flash is typically used for code storage, such as firmware or boot code, because it provides faster access times. NAND flash has higher density and lower cost per bit, which makes it ideal for data storage applications.

Flash memory has a limited lifespan, as it can only be erased and reprogrammed a limited number of times. This is because the process of erasing and reprogramming the memory causes wear and tear on the floating gate transistor. However, modern flash memory devices have a sophisticated wear-leveling algorithm that distributes writes evenly across the memory, which extends the lifespan of the device.