WDIP Flash Memory 271

Reset All

Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Terminal Form	Parallel or Serial	Operating Mode	Sector Size (Words)	Maximum Supply Current	No. of Words	Nominal Supply Voltage / Vsup (V)	Toggle Bit	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	No. of Sectors/Size	Command User Interface	Terminal Position	JESD-30 Code	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Endurance	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Page Size (words)	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Type	Maximum Standby Current	Maximum Access Time	Programming Voltage (V)	Data Polling
TMS29F010-20JQ	Texas Instruments	FLASH	AUTOMOTIVE	32	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	16K	15 mA	131072 words	5	YES	5	8	IN-LINE, WINDOW	DIP32,.6	Flash Memories	2.54 mm	125 Cel	3-STATE	128KX8	128K	-40 Cel	8	YES	DUAL	R-GDIP-T32	5.5 V	4.907 mm	10000 Write/Erase Cycles	15.24 mm	Not Qualified	1048576 bit	4.5 V		NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.001 Amp	200 ns	5	YES
TMS29F010-200JQ	Texas Instruments	FLASH	AUTOMOTIVE	32	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	16K	15 mA	131072 words	5	YES	5	8	IN-LINE, WINDOW	DIP32,.6	Flash Memories	2.54 mm	125 Cel	3-STATE	128KX8	128K	-40 Cel	8	YES	DUAL	R-GDIP-T32	5.25 V	4.907 mm	10000 Write/Erase Cycles	15.24 mm	Not Qualified	1048576 bit	4.75 V		NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.001 Amp	200 ns	5	YES
TMS29F010-150JQ4	Texas Instruments	FLASH	AUTOMOTIVE	32	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	16K	15 mA	131072 words	5	YES	5	8	IN-LINE, WINDOW	DIP32,.6	Flash Memories	2.54 mm	125 Cel	3-STATE	128KX8	128K	-40 Cel	8	YES	DUAL	R-GDIP-T32	5.25 V	4.907 mm	10000 Write/Erase Cycles	15.24 mm	Not Qualified	1048576 bit	4.75 V		NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.001 Amp	150 ns	5	YES
TMS29F258-250JE4	Texas Instruments	FLASH	INDUSTRIAL	28	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	64	15 mA	32768 words	5	NO	5	8	IN-LINE, WINDOW	DIP28,.6	Flash Memories	2.54 mm	85 Cel	3-STATE	32KX8	32K	-40 Cel	512	NO	DUAL	R-GDIP-T28	5.25 V	4.907 mm		15.24 mm	Not Qualified	262144 bit	4.75 V	64	NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.003 Amp	250 ns	5	YES
TMS29F259-300JQ	Texas Instruments	FLASH	AUTOMOTIVE	32	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		15 mA	32768 words	5	NO	5	8	IN-LINE, WINDOW	DIP32,.6	Flash Memories	2.54 mm	125 Cel	3-STATE	32KX8	32K	-40 Cel		NO	DUAL	R-GDIP-T32	5.25 V	4.907 mm		15.24 mm	Not Qualified	262144 bit	4.75 V	64	NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.003 Amp	300 ns	5	YES
TMS29F258-200JQ4	Texas Instruments	FLASH	AUTOMOTIVE	28	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	64	15 mA	32768 words	5	NO	5	8	IN-LINE, WINDOW	DIP28,.6	Flash Memories	2.54 mm	125 Cel	3-STATE	32KX8	32K	-40 Cel	512	NO	DUAL	R-GDIP-T28	5.25 V	4.907 mm		15.24 mm	Not Qualified	262144 bit	4.75 V	64	NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.003 Amp	200 ns	5	YES
TMS29F256-250JE	Texas Instruments	FLASH	INDUSTRIAL	28	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	64	15 mA	32768 words	5	NO	5	8	IN-LINE, WINDOW	DIP28,.6	Flash Memories	2.54 mm	85 Cel	3-STATE	32KX8	32K	-40 Cel	512	NO	DUAL	R-GDIP-T28	5.25 V	4.907 mm		15.24 mm	Not Qualified	262144 bit	4.75 V	64	NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.003 Amp	250 ns	5	YES
TMS29F259-20JL4	Texas Instruments	FLASH	COMMERCIAL	32	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		15 mA	32768 words	5	NO	5	8	IN-LINE, WINDOW	DIP32,.6	Flash Memories	2.54 mm	70 Cel	3-STATE	32KX8	32K	0 Cel		NO	DUAL	R-GDIP-T32	5.5 V	4.907 mm		15.24 mm	Not Qualified	262144 bit	4.5 V	64	NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.003 Amp	200 ns	5	YES
TMS29F256-200JQ	Texas Instruments	FLASH	AUTOMOTIVE	28	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	64	15 mA	32768 words	5	NO	5	8	IN-LINE, WINDOW	DIP28,.6	Flash Memories	2.54 mm	125 Cel	3-STATE	32KX8	32K	-40 Cel	512	NO	DUAL	R-GDIP-T28	5.25 V	4.907 mm		15.24 mm	Not Qualified	262144 bit	4.75 V	64	NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.003 Amp	200 ns	5	YES
TMS29F259-300JL	Texas Instruments	FLASH	COMMERCIAL	32	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		15 mA	32768 words	5	NO	5	8	IN-LINE, WINDOW	DIP32,.6	Flash Memories	2.54 mm	70 Cel	3-STATE	32KX8	32K	0 Cel		NO	DUAL	R-GDIP-T32	5.25 V	4.907 mm		15.24 mm	Not Qualified	262144 bit	4.75 V	64	NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.003 Amp	300 ns	5	YES
TMS29F258-170JL	Texas Instruments	FLASH	COMMERCIAL	28	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	64	15 mA	32768 words	5	NO	5	8	IN-LINE, WINDOW	DIP28,.6	Flash Memories	2.54 mm	70 Cel	3-STATE	32KX8	32K	0 Cel	512	NO	DUAL	R-GDIP-T28	5.25 V	4.907 mm		15.24 mm	Not Qualified	262144 bit	4.75 V	64	NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.003 Amp	170 ns	5	YES
TMS29F258-20JE	Texas Instruments	FLASH	INDUSTRIAL	28	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	64	15 mA	32768 words	5	NO	5	8	IN-LINE, WINDOW	DIP28,.6	Flash Memories	2.54 mm	85 Cel	3-STATE	32KX8	32K	-40 Cel	512	NO	DUAL	R-GDIP-T28	5.5 V	4.907 mm		15.24 mm	Not Qualified	262144 bit	4.5 V	64	NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.003 Amp	200 ns	5	YES
TMS29F512-20JL	Texas Instruments	FLASH	COMMERCIAL	32	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS			65536 words	5			8	IN-LINE, WINDOW			2.54 mm	70 Cel	3-STATE	64KX8	64K	0 Cel			DUAL	R-GDIP-T32	5.5 V	4.907 mm		15.24 mm	Not Qualified	524288 bit	4.5 V				NOR TYPE		200 ns	5
TMS29F259-30JL	Texas Instruments	FLASH	COMMERCIAL	32	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		15 mA	32768 words	5	NO	5	8	IN-LINE, WINDOW	DIP32,.6	Flash Memories	2.54 mm	70 Cel	3-STATE	32KX8	32K	0 Cel		NO	DUAL	R-GDIP-T32	5.5 V	4.907 mm		15.24 mm	Not Qualified	262144 bit	4.5 V	64	NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.003 Amp	300 ns	5	YES
TMS29F512-15JL	Texas Instruments	FLASH	COMMERCIAL	32	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS			65536 words	5			8	IN-LINE, WINDOW			2.54 mm	70 Cel	3-STATE	64KX8	64K	0 Cel			DUAL	R-GDIP-T32	5.5 V	4.907 mm		15.24 mm	Not Qualified	524288 bit	4.5 V				NOR TYPE		150 ns	5
TMS29F259-250JE4	Texas Instruments	FLASH	INDUSTRIAL	32	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		15 mA	32768 words	5	NO	5	8	IN-LINE, WINDOW	DIP32,.6	Flash Memories	2.54 mm	85 Cel	3-STATE	32KX8	32K	-40 Cel		NO	DUAL	R-GDIP-T32	5.25 V	4.907 mm		15.24 mm	Not Qualified	262144 bit	4.75 V	64	NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.003 Amp	250 ns	5	YES
TMS29F256-300JE	Texas Instruments	FLASH	INDUSTRIAL	28	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	64	15 mA	32768 words	5	NO	5	8	IN-LINE, WINDOW	DIP28,.6	Flash Memories	2.54 mm	85 Cel	3-STATE	32KX8	32K	-40 Cel	512	NO	DUAL	R-GDIP-T28	5.25 V	4.907 mm		15.24 mm	Not Qualified	262144 bit	4.75 V	64	NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.003 Amp	300 ns	5	YES
TMS29F258-170JL4	Texas Instruments	FLASH	COMMERCIAL	28	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS			32768 words	5			8	IN-LINE, WINDOW			2.54 mm	70 Cel	3-STATE	32KX8	32K	0 Cel			DUAL	R-GDIP-T28	5.25 V	4.907 mm		15.24 mm	Not Qualified	262144 bit	4.75 V				NOR TYPE		170 ns	5
TMS29F259-300JE	Texas Instruments	FLASH	INDUSTRIAL	32	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		15 mA	32768 words	5	NO	5	8	IN-LINE, WINDOW	DIP32,.6	Flash Memories	2.54 mm	85 Cel	3-STATE	32KX8	32K	-40 Cel		NO	DUAL	R-GDIP-T32	5.25 V	4.907 mm		15.24 mm	Not Qualified	262144 bit	4.75 V	64	NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.003 Amp	300 ns	5	YES
TMS29F258-30JQ4	Texas Instruments	FLASH	AUTOMOTIVE	28	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	64	15 mA	32768 words	5	NO	5	8	IN-LINE, WINDOW	DIP28,.6	Flash Memories	2.54 mm	125 Cel	3-STATE	32KX8	32K	-40 Cel	512	NO	DUAL	R-GDIP-T28	5.5 V	4.907 mm		15.24 mm	Not Qualified	262144 bit	4.5 V	64	NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.003 Amp	300 ns	5	YES
TMS29F512-100JL	Texas Instruments	FLASH	COMMERCIAL	32	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS			65536 words	5			8	IN-LINE, WINDOW			2.54 mm	70 Cel	3-STATE	64KX8	64K	0 Cel			DUAL	R-GDIP-T32	5.25 V	4.907 mm		15.24 mm	Not Qualified	524288 bit	4.75 V				NOR TYPE		100 ns	5
TMS29F010-100JE	Texas Instruments	FLASH	INDUSTRIAL	32	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	16K	15 mA	131072 words	5	YES	5	8	IN-LINE, WINDOW	DIP32,.6	Flash Memories	2.54 mm	105 Cel	3-STATE	128KX8	128K	-40 Cel	8	YES	DUAL	R-GDIP-T32	5.25 V	4.907 mm	10000 Write/Erase Cycles	15.24 mm	Not Qualified	1048576 bit	4.75 V		NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.001 Amp	100 ns	5	YES
TMS29F259-200JE4	Texas Instruments	FLASH	INDUSTRIAL	32	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		15 mA	32768 words	5	NO	5	8	IN-LINE, WINDOW	DIP32,.6	Flash Memories	2.54 mm	85 Cel	3-STATE	32KX8	32K	-40 Cel		NO	DUAL	R-GDIP-T32	5.25 V	4.907 mm		15.24 mm	Not Qualified	262144 bit	4.75 V	64	NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.003 Amp	200 ns	5	YES
TMS29F259-250JQ4	Texas Instruments	FLASH	AUTOMOTIVE	32	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		15 mA	32768 words	5	NO	5	8	IN-LINE, WINDOW	DIP32,.6	Flash Memories	2.54 mm	125 Cel	3-STATE	32KX8	32K	-40 Cel		NO	DUAL	R-GDIP-T32	5.25 V	4.907 mm		15.24 mm	Not Qualified	262144 bit	4.75 V	64	NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.003 Amp	250 ns	5	YES
TMS29F259-25JQ	Texas Instruments	FLASH	AUTOMOTIVE	32	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		15 mA	32768 words	5	NO	5	8	IN-LINE, WINDOW	DIP32,.6	Flash Memories	2.54 mm	125 Cel	3-STATE	32KX8	32K	-40 Cel		NO	DUAL	R-GDIP-T32	5.5 V	4.907 mm		15.24 mm	Not Qualified	262144 bit	4.5 V	64	NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.003 Amp	250 ns	5	YES
TMS29F256-200JL4	Texas Instruments	FLASH	COMMERCIAL	28	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	64	15 mA	32768 words	5	NO	5	8	IN-LINE, WINDOW	DIP28,.6	Flash Memories	2.54 mm	70 Cel	3-STATE	32KX8	32K	0 Cel	512	NO	DUAL	R-GDIP-T28	5.25 V	4.907 mm		15.24 mm	Not Qualified	262144 bit	4.75 V	64	NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.003 Amp	200 ns	5	YES
TMS29F256-250JL4	Texas Instruments	FLASH	COMMERCIAL	28	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	64	15 mA	32768 words	5	NO	5	8	IN-LINE, WINDOW	DIP28,.6	Flash Memories	2.54 mm	70 Cel	3-STATE	32KX8	32K	0 Cel	512	NO	DUAL	R-GDIP-T28	5.25 V	4.907 mm		15.24 mm	Not Qualified	262144 bit	4.75 V	64	NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.003 Amp	250 ns	5	YES
TMS29F512-200JL	Texas Instruments	FLASH	COMMERCIAL	32	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS			65536 words	5			8	IN-LINE, WINDOW			2.54 mm	70 Cel	3-STATE	64KX8	64K	0 Cel			DUAL	R-GDIP-T32	5.25 V	4.907 mm		15.24 mm	Not Qualified	524288 bit	4.75 V				NOR TYPE		200 ns	5
TMS29F010-20JL4	Texas Instruments	FLASH	COMMERCIAL	32	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	16K	15 mA	131072 words	5	YES	5	8	IN-LINE, WINDOW	DIP32,.6	Flash Memories	2.54 mm	70 Cel	3-STATE	128KX8	128K	0 Cel	8	YES	DUAL	R-GDIP-T32	5.5 V	4.907 mm	10000 Write/Erase Cycles	15.24 mm	Not Qualified	1048576 bit	4.5 V		NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.001 Amp	200 ns	5	YES
TMS29F258-20JQ4	Texas Instruments	FLASH	AUTOMOTIVE	28	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	64	15 mA	32768 words	5	NO	5	8	IN-LINE, WINDOW	DIP28,.6	Flash Memories	2.54 mm	125 Cel	3-STATE	32KX8	32K	-40 Cel	512	NO	DUAL	R-GDIP-T28	5.5 V	4.907 mm		15.24 mm	Not Qualified	262144 bit	4.5 V	64	NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.003 Amp	200 ns	5	YES
TMS29F259-30JL4	Texas Instruments	FLASH	COMMERCIAL	32	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		15 mA	32768 words	5	NO	5	8	IN-LINE, WINDOW	DIP32,.6	Flash Memories	2.54 mm	70 Cel	3-STATE	32KX8	32K	0 Cel		NO	DUAL	R-GDIP-T32	5.5 V	4.907 mm		15.24 mm	Not Qualified	262144 bit	4.5 V	64	NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.003 Amp	300 ns	5	YES
TMS29F256-200JQ4	Texas Instruments	FLASH	AUTOMOTIVE	28	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	64	15 mA	32768 words	5	NO	5	8	IN-LINE, WINDOW	DIP28,.6	Flash Memories	2.54 mm	125 Cel	3-STATE	32KX8	32K	-40 Cel	512	NO	DUAL	R-GDIP-T28	5.25 V	4.907 mm		15.24 mm	Not Qualified	262144 bit	4.75 V	64	NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.003 Amp	200 ns	5	YES
TMS29F010-120JL	Texas Instruments	FLASH	COMMERCIAL	32	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	16K	15 mA	131072 words	5	YES	5	8	IN-LINE, WINDOW	DIP32,.6	Flash Memories	2.54 mm	70 Cel	3-STATE	128KX8	128K	0 Cel	8	YES	DUAL	R-GDIP-T32	5.25 V	4.907 mm	10000 Write/Erase Cycles	15.24 mm	Not Qualified	1048576 bit	4.75 V		NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.001 Amp	120 ns	5	YES
TMS29F258-200JL	Texas Instruments	FLASH	COMMERCIAL	28	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	64	15 mA	32768 words	5	NO	5	8	IN-LINE, WINDOW	DIP28,.6	Flash Memories	2.54 mm	70 Cel	3-STATE	32KX8	32K	0 Cel	512	NO	DUAL	R-GDIP-T28	5.25 V	4.907 mm		15.24 mm	Not Qualified	262144 bit	4.75 V	64	NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.003 Amp	200 ns	5	YES
TMS29F256-30JE4	Texas Instruments	FLASH	INDUSTRIAL	28	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	64	15 mA	32768 words	5	NO	5	8	IN-LINE, WINDOW	DIP28,.6	Flash Memories	2.54 mm	85 Cel	3-STATE	32KX8	32K	-40 Cel	512	NO	DUAL	R-GDIP-T28	5.5 V	4.907 mm		15.24 mm	Not Qualified	262144 bit	4.5 V	64	NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.003 Amp	300 ns	5	YES
TMS29F259-170JL	Texas Instruments	FLASH	COMMERCIAL	32	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		15 mA	32768 words	5	NO	5	8	IN-LINE, WINDOW	DIP32,.6	Flash Memories	2.54 mm	70 Cel	3-STATE	32KX8	32K	0 Cel		NO	DUAL	R-GDIP-T32	5.25 V	4.907 mm		15.24 mm	Not Qualified	262144 bit	4.75 V	64	NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.003 Amp	170 ns	5	YES
TMS29F259-200JQ	Texas Instruments	FLASH	AUTOMOTIVE	32	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		15 mA	32768 words	5	NO	5	8	IN-LINE, WINDOW	DIP32,.6	Flash Memories	2.54 mm	125 Cel	3-STATE	32KX8	32K	-40 Cel		NO	DUAL	R-GDIP-T32	5.25 V	4.907 mm		15.24 mm	Not Qualified	262144 bit	4.75 V	64	NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.003 Amp	200 ns	5	YES
TMS29F010-200JL4	Texas Instruments	FLASH	COMMERCIAL	32	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	16K	15 mA	131072 words	5	YES	5	8	IN-LINE, WINDOW	DIP32,.6	Flash Memories	2.54 mm	70 Cel	3-STATE	128KX8	128K	0 Cel	8	YES	DUAL	R-GDIP-T32	5.25 V	4.907 mm	10000 Write/Erase Cycles	15.24 mm	Not Qualified	1048576 bit	4.75 V		NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.001 Amp	200 ns	5	YES
TMS29F256-170JE	Texas Instruments	FLASH	INDUSTRIAL	28	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	64	15 mA	32768 words	5	NO	5	8	IN-LINE, WINDOW	DIP28,.6	Flash Memories	2.54 mm	85 Cel	3-STATE	32KX8	32K	-40 Cel	512	NO	DUAL	R-GDIP-T28	5.25 V	4.907 mm		15.24 mm	Not Qualified	262144 bit	4.75 V	64	NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.003 Amp	170 ns	5	YES
TMS29F010-15JQ	Texas Instruments	FLASH	AUTOMOTIVE	32	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	16K	15 mA	131072 words	5	YES	5	8	IN-LINE, WINDOW	DIP32,.6	Flash Memories	2.54 mm	125 Cel	3-STATE	128KX8	128K	-40 Cel	8	YES	DUAL	R-GDIP-T32	5.5 V	4.907 mm	10000 Write/Erase Cycles	15.24 mm	Not Qualified	1048576 bit	4.5 V		NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.001 Amp	150 ns	5	YES
TMS29F258-250JQ	Texas Instruments	FLASH	AUTOMOTIVE	28	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	64	15 mA	32768 words	5	NO	5	8	IN-LINE, WINDOW	DIP28,.6	Flash Memories	2.54 mm	125 Cel	3-STATE	32KX8	32K	-40 Cel	512	NO	DUAL	R-GDIP-T28	5.25 V	4.907 mm		15.24 mm	Not Qualified	262144 bit	4.75 V	64	NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.003 Amp	250 ns	5	YES
TMS29F010-200JE4	Texas Instruments	FLASH	INDUSTRIAL	32	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	16K	15 mA	131072 words	5	YES	5	8	IN-LINE, WINDOW	DIP32,.6	Flash Memories	2.54 mm	105 Cel	3-STATE	128KX8	128K	-40 Cel	8	YES	DUAL	R-GDIP-T32	5.25 V	4.907 mm	10000 Write/Erase Cycles	15.24 mm	Not Qualified	1048576 bit	4.75 V		NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.001 Amp	200 ns	5	YES
TMS29F010-150JL	Texas Instruments	FLASH	COMMERCIAL	32	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	16K	15 mA	131072 words	5	YES	5	8	IN-LINE, WINDOW	DIP32,.6	Flash Memories	2.54 mm	70 Cel	3-STATE	128KX8	128K	0 Cel	8	YES	DUAL	R-GDIP-T32	5.25 V	4.907 mm	10000 Write/Erase Cycles	15.24 mm	Not Qualified	1048576 bit	4.75 V		NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.001 Amp	150 ns	5	YES
TMS29F256-200JL	Texas Instruments	FLASH	COMMERCIAL	28	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	64	15 mA	32768 words	5	NO	5	8	IN-LINE, WINDOW	DIP28,.6	Flash Memories	2.54 mm	70 Cel	3-STATE	32KX8	32K	0 Cel	512	NO	DUAL	R-GDIP-T28	5.25 V	4.907 mm		15.24 mm	Not Qualified	262144 bit	4.75 V	64	NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.003 Amp	200 ns	5	YES
TMS29F258-250JL4	Texas Instruments	FLASH	COMMERCIAL	28	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS			32768 words	5			8	IN-LINE, WINDOW			2.54 mm	70 Cel	3-STATE	32KX8	32K	0 Cel			DUAL	R-GDIP-T28	5.25 V	4.907 mm		15.24 mm	Not Qualified	262144 bit	4.75 V				NOR TYPE		250 ns	5
TMS29F010-12JL4	Texas Instruments	FLASH	COMMERCIAL	32	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	16K	15 mA	131072 words	5	YES	5	8	IN-LINE, WINDOW	DIP32,.6	Flash Memories	2.54 mm	70 Cel	3-STATE	128KX8	128K	0 Cel	8	YES	DUAL	R-GDIP-T32	5.5 V	4.907 mm	10000 Write/Erase Cycles	15.24 mm	Not Qualified	1048576 bit	4.5 V		NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.001 Amp	120 ns	5	YES
TMS29F259-170JQ4	Texas Instruments	FLASH	AUTOMOTIVE	32	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS			32768 words	5			8	IN-LINE, WINDOW			2.54 mm	125 Cel	3-STATE	32KX8	32K	-40 Cel			DUAL	R-GDIP-T32	5.25 V	4.907 mm		15.24 mm	Not Qualified	262144 bit	4.75 V				NOR TYPE		170 ns	5
TMS29F256-170JQ	Texas Instruments	FLASH	AUTOMOTIVE	28	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	64	15 mA	32768 words	5	NO	5	8	IN-LINE, WINDOW	DIP28,.6	Flash Memories	2.54 mm	125 Cel	3-STATE	32KX8	32K	-40 Cel	512	NO	DUAL	R-GDIP-T28	5.25 V	4.907 mm		15.24 mm	Not Qualified	262144 bit	4.75 V	64	NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.003 Amp	170 ns	5	YES

Flash Memory

Flash memory is a type of non-volatile computer memory that is commonly used in digital devices such as USB drives, solid-state drives, and digital cameras. It is a type of EEPROM (Electrically Erasable Programmable Read-Only Memory) that allows data to be erased and reprogrammed in blocks instead of one byte at a time. Flash memory uses a floating gate transistor to store data, which allows it to retain information even when the power is turned off.

Flash memory is widely used in digital devices because of its high capacity, small size, and fast access times. It is also more durable than other types of memory, such as hard disk drives, because it has no moving parts. This makes it ideal for use in portable devices that may be subject to physical shock or vibration.

There are two types of flash memory: NOR flash and NAND flash. NOR flash is faster than NAND flash, but it has lower density and higher cost per bit. NOR flash is typically used for code storage, such as firmware or boot code, because it provides faster access times. NAND flash has higher density and lower cost per bit, which makes it ideal for data storage applications.

Flash memory has a limited lifespan, as it can only be erased and reprogrammed a limited number of times. This is because the process of erasing and reprogramming the memory causes wear and tear on the floating gate transistor. However, modern flash memory devices have a sophisticated wear-leveling algorithm that distributes writes evenly across the memory, which extends the lifespan of the device.