WDIP Flash Memory 271

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Terminal Form	Parallel or Serial	Operating Mode	Sector Size (Words)	Maximum Supply Current	No. of Words	Nominal Supply Voltage / Vsup (V)	Toggle Bit	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	No. of Sectors/Size	Command User Interface	Terminal Finish	Terminal Position	JESD-30 Code	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Endurance	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	Page Size (words)	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Type	Maximum Standby Current	Length	Maximum Access Time	Programming Voltage (V)	Data Polling
TMS29F010-12JE	Texas Instruments	FLASH	INDUSTRIAL	32	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	16K	15 mA	131072 words	5	YES	5	8	IN-LINE, WINDOW	DIP32,.6	Flash Memories	2.54 mm	105 Cel	3-STATE	128KX8	128K	-40 Cel	8	YES		DUAL	R-GDIP-T32	5.5 V	4.907 mm	10000 Write/Erase Cycles	15.24 mm	Not Qualified	1048576 bit	4.5 V				NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.001 Amp		120 ns	5	YES
TMS29F256-30JE	Texas Instruments	FLASH	INDUSTRIAL	28	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	64	15 mA	32768 words	5	NO	5	8	IN-LINE, WINDOW	DIP28,.6	Flash Memories	2.54 mm	85 Cel	3-STATE	32KX8	32K	-40 Cel	512	NO		DUAL	R-GDIP-T28	5.5 V	4.907 mm		15.24 mm	Not Qualified	262144 bit	4.5 V		64		NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.003 Amp		300 ns	5	YES
TMS29F256-250JL	Texas Instruments	FLASH	COMMERCIAL	28	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	64	15 mA	32768 words	5	NO	5	8	IN-LINE, WINDOW	DIP28,.6	Flash Memories	2.54 mm	70 Cel	3-STATE	32KX8	32K	0 Cel	512	NO		DUAL	R-GDIP-T28	5.25 V	4.907 mm		15.24 mm	Not Qualified	262144 bit	4.75 V		64		NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.003 Amp		250 ns	5	YES
TMS29F259-170JL4	Texas Instruments	FLASH	COMMERCIAL	32	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		15 mA	32768 words	5	NO	5	8	IN-LINE, WINDOW	DIP32,.6	Flash Memories	2.54 mm	70 Cel	3-STATE	32KX8	32K	0 Cel		NO		DUAL	R-GDIP-T32	5.25 V	4.907 mm		15.24 mm	Not Qualified	262144 bit	4.75 V		64		NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.003 Amp		170 ns	5	YES
TMS29F258-300JE	Texas Instruments	FLASH	INDUSTRIAL	28	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	64	15 mA	32768 words	5	NO	5	8	IN-LINE, WINDOW	DIP28,.6	Flash Memories	2.54 mm	85 Cel	3-STATE	32KX8	32K	-40 Cel	512	NO		DUAL	R-GDIP-T28	5.25 V	4.907 mm		15.24 mm	Not Qualified	262144 bit	4.75 V		64		NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.003 Amp		300 ns	5	YES
TMS29F256-25JL4	Texas Instruments	FLASH	COMMERCIAL	28	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	64	15 mA	32768 words	5	NO	5	8	IN-LINE, WINDOW	DIP28,.6	Flash Memories	2.54 mm	70 Cel	3-STATE	32KX8	32K	0 Cel	512	NO		DUAL	R-GDIP-T28	5.5 V	4.907 mm		15.24 mm	Not Qualified	262144 bit	4.5 V		64		NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.003 Amp		250 ns	5	YES
TMS29F258-200JL4	Texas Instruments	FLASH	COMMERCIAL	28	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS			32768 words	5			8	IN-LINE, WINDOW			2.54 mm	70 Cel	3-STATE	32KX8	32K	0 Cel				DUAL	R-GDIP-T28	5.25 V	4.907 mm		15.24 mm	Not Qualified	262144 bit	4.75 V						NOR TYPE			200 ns	5
TMS29F010-12JQ	Texas Instruments	FLASH	AUTOMOTIVE	32	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	16K	15 mA	131072 words	5	YES	5	8	IN-LINE, WINDOW	DIP32,.6	Flash Memories	2.54 mm	125 Cel	3-STATE	128KX8	128K	-40 Cel	8	YES		DUAL	R-GDIP-T32	5.5 V	4.907 mm	10000 Write/Erase Cycles	15.24 mm	Not Qualified	1048576 bit	4.5 V				NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.001 Amp		120 ns	5	YES
TMS29F258-20JQ	Texas Instruments	FLASH	AUTOMOTIVE	28	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	64	15 mA	32768 words	5	NO	5	8	IN-LINE, WINDOW	DIP28,.6	Flash Memories	2.54 mm	125 Cel	3-STATE	32KX8	32K	-40 Cel	512	NO		DUAL	R-GDIP-T28	5.5 V	4.907 mm		15.24 mm	Not Qualified	262144 bit	4.5 V		64		NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.003 Amp		200 ns	5	YES
TMS29F259-300JQ4	Texas Instruments	FLASH	AUTOMOTIVE	32	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		15 mA	32768 words	5	NO	5	8	IN-LINE, WINDOW	DIP32,.6	Flash Memories	2.54 mm	125 Cel	3-STATE	32KX8	32K	-40 Cel		NO		DUAL	R-GDIP-T32	5.25 V	4.907 mm		15.24 mm	Not Qualified	262144 bit	4.75 V		64		NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.003 Amp		300 ns	5	YES
TMS29F258-20JL4	Texas Instruments	FLASH	COMMERCIAL	28	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS			32768 words	5			8	IN-LINE, WINDOW			2.54 mm	70 Cel	3-STATE	32KX8	32K	0 Cel				DUAL	R-GDIP-T28	5.5 V	4.907 mm		15.24 mm	Not Qualified	262144 bit	4.5 V						NOR TYPE			200 ns	5
TMS29F258-25JE	Texas Instruments	FLASH	INDUSTRIAL	28	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	64	15 mA	32768 words	5	NO	5	8	IN-LINE, WINDOW	DIP28,.6	Flash Memories	2.54 mm	85 Cel	3-STATE	32KX8	32K	-40 Cel	512	NO		DUAL	R-GDIP-T28	5.5 V	4.907 mm		15.24 mm	Not Qualified	262144 bit	4.5 V		64		NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.003 Amp		250 ns	5	YES
TMS29F256-30JQ4	Texas Instruments	FLASH	AUTOMOTIVE	28	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	64	15 mA	32768 words	5	NO	5	8	IN-LINE, WINDOW	DIP28,.6	Flash Memories	2.54 mm	125 Cel	3-STATE	32KX8	32K	-40 Cel	512	NO		DUAL	R-GDIP-T28	5.5 V	4.907 mm		15.24 mm	Not Qualified	262144 bit	4.5 V		64		NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.003 Amp		300 ns	5	YES
TMS29F258-20JE4	Texas Instruments	FLASH	INDUSTRIAL	28	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	64	15 mA	32768 words	5	NO	5	8	IN-LINE, WINDOW	DIP28,.6	Flash Memories	2.54 mm	85 Cel	3-STATE	32KX8	32K	-40 Cel	512	NO		DUAL	R-GDIP-T28	5.5 V	4.907 mm		15.24 mm	Not Qualified	262144 bit	4.5 V		64		NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.003 Amp		200 ns	5	YES
TMS29F256-25JE4	Texas Instruments	FLASH	INDUSTRIAL	28	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	64	15 mA	32768 words	5	NO	5	8	IN-LINE, WINDOW	DIP28,.6	Flash Memories	2.54 mm	85 Cel	3-STATE	32KX8	32K	-40 Cel	512	NO		DUAL	R-GDIP-T28	5.5 V	4.907 mm		15.24 mm	Not Qualified	262144 bit	4.5 V		64		NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.003 Amp		250 ns	5	YES
TMS29F256-250JQ	Texas Instruments	FLASH	AUTOMOTIVE	28	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	64	15 mA	32768 words	5	NO	5	8	IN-LINE, WINDOW	DIP28,.6	Flash Memories	2.54 mm	125 Cel	3-STATE	32KX8	32K	-40 Cel	512	NO		DUAL	R-GDIP-T28	5.25 V	4.907 mm		15.24 mm	Not Qualified	262144 bit	4.75 V		64		NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.003 Amp		250 ns	5	YES
TMS29F256-30JQ	Texas Instruments	FLASH	AUTOMOTIVE	28	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	64	15 mA	32768 words	5	NO	5	8	IN-LINE, WINDOW	DIP28,.6	Flash Memories	2.54 mm	125 Cel	3-STATE	32KX8	32K	-40 Cel	512	NO		DUAL	R-GDIP-T28	5.5 V	4.907 mm		15.24 mm	Not Qualified	262144 bit	4.5 V		64		NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.003 Amp		300 ns	5	YES
TMS29F256-250JE4	Texas Instruments	FLASH	INDUSTRIAL	28	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	64	15 mA	32768 words	5	NO	5	8	IN-LINE, WINDOW	DIP28,.6	Flash Memories	2.54 mm	85 Cel	3-STATE	32KX8	32K	-40 Cel	512	NO		DUAL	R-GDIP-T28	5.25 V	4.907 mm		15.24 mm	Not Qualified	262144 bit	4.75 V		64		NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.003 Amp		250 ns	5	YES
TMS29F256-170JL4	Texas Instruments	FLASH	COMMERCIAL	28	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	64	15 mA	32768 words	5	NO	5	8	IN-LINE, WINDOW	DIP28,.6	Flash Memories	2.54 mm	70 Cel	3-STATE	32KX8	32K	0 Cel	512	NO		DUAL	R-GDIP-T28	5.25 V	4.907 mm		15.24 mm	Not Qualified	262144 bit	4.75 V		64		NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.003 Amp		170 ns	5	YES
TMS29F258-300JQ	Texas Instruments	FLASH	AUTOMOTIVE	28	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	64	15 mA	32768 words	5	NO	5	8	IN-LINE, WINDOW	DIP28,.6	Flash Memories	2.54 mm	125 Cel	3-STATE	32KX8	32K	-40 Cel	512	NO		DUAL	R-GDIP-T28	5.25 V	4.907 mm		15.24 mm	Not Qualified	262144 bit	4.75 V		64		NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.003 Amp		300 ns	5	YES
TMS29F256-25JQ4	Texas Instruments	FLASH	AUTOMOTIVE	28	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	64	15 mA	32768 words	5	NO	5	8	IN-LINE, WINDOW	DIP28,.6	Flash Memories	2.54 mm	125 Cel	3-STATE	32KX8	32K	-40 Cel	512	NO		DUAL	R-GDIP-T28	5.5 V	4.907 mm		15.24 mm	Not Qualified	262144 bit	4.5 V		64		NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.003 Amp		250 ns	5	YES
TMS29F258-170JQ	Texas Instruments	FLASH	AUTOMOTIVE	28	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	64	15 mA	32768 words	5	NO	5	8	IN-LINE, WINDOW	DIP28,.6	Flash Memories	2.54 mm	125 Cel	3-STATE	32KX8	32K	-40 Cel	512	NO		DUAL	R-GDIP-T28	5.25 V	4.907 mm		15.24 mm	Not Qualified	262144 bit	4.75 V		64		NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.003 Amp		170 ns	5	YES
TMS29F259-250JQ	Texas Instruments	FLASH	AUTOMOTIVE	32	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		15 mA	32768 words	5	NO	5	8	IN-LINE, WINDOW	DIP32,.6	Flash Memories	2.54 mm	125 Cel	3-STATE	32KX8	32K	-40 Cel		NO		DUAL	R-GDIP-T32	5.25 V	4.907 mm		15.24 mm	Not Qualified	262144 bit	4.75 V		64		NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.003 Amp		250 ns	5	YES
TMS29F010-100JL4	Texas Instruments	FLASH	COMMERCIAL	32	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	16K	15 mA	131072 words	5	YES	5	8	IN-LINE, WINDOW	DIP32,.6	Flash Memories	2.54 mm	70 Cel	3-STATE	128KX8	128K	0 Cel	8	YES		DUAL	R-GDIP-T32	5.25 V	4.907 mm	10000 Write/Erase Cycles	15.24 mm	Not Qualified	1048576 bit	4.75 V				NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.001 Amp		100 ns	5	YES
TMS29F259-30JE4	Texas Instruments	FLASH	INDUSTRIAL	32	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		15 mA	32768 words	5	NO	5	8	IN-LINE, WINDOW	DIP32,.6	Flash Memories	2.54 mm	85 Cel	3-STATE	32KX8	32K	-40 Cel		NO		DUAL	R-GDIP-T32	5.5 V	4.907 mm		15.24 mm	Not Qualified	262144 bit	4.5 V		64		NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.003 Amp		300 ns	5	YES
TMS29F010-20JQ4	Texas Instruments	FLASH	AUTOMOTIVE	32	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	16K	15 mA	131072 words	5	YES	5	8	IN-LINE, WINDOW	DIP32,.6	Flash Memories	2.54 mm	125 Cel	3-STATE	128KX8	128K	-40 Cel	8	YES		DUAL	R-GDIP-T32	5.5 V	4.907 mm	10000 Write/Erase Cycles	15.24 mm	Not Qualified	1048576 bit	4.5 V				NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.001 Amp		200 ns	5	YES
TMS29F256-25JQ	Texas Instruments	FLASH	AUTOMOTIVE	28	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	64	15 mA	32768 words	5	NO	5	8	IN-LINE, WINDOW	DIP28,.6	Flash Memories	2.54 mm	125 Cel	3-STATE	32KX8	32K	-40 Cel	512	NO		DUAL	R-GDIP-T28	5.5 V	4.907 mm		15.24 mm	Not Qualified	262144 bit	4.5 V		64		NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.003 Amp		250 ns	5	YES
TMS29F010-120JE	Texas Instruments	FLASH	INDUSTRIAL	32	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	16K	15 mA	131072 words	5	YES	5	8	IN-LINE, WINDOW	DIP32,.6	Flash Memories	2.54 mm	105 Cel	3-STATE	128KX8	128K	-40 Cel	8	YES		DUAL	R-GDIP-T32	5.25 V	4.907 mm	10000 Write/Erase Cycles	15.24 mm	Not Qualified	1048576 bit	4.75 V				NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.001 Amp		120 ns	5	YES
TMS29F259-200JL4	Texas Instruments	FLASH	COMMERCIAL	32	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		15 mA	32768 words	5	NO	5	8	IN-LINE, WINDOW	DIP32,.6	Flash Memories	2.54 mm	70 Cel	3-STATE	32KX8	32K	0 Cel		NO		DUAL	R-GDIP-T32	5.25 V	4.907 mm		15.24 mm	Not Qualified	262144 bit	4.75 V		64		NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.003 Amp		200 ns	5	YES
TMS29F010-120JQ	Texas Instruments	FLASH	AUTOMOTIVE	32	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	16K	15 mA	131072 words	5	YES	5	8	IN-LINE, WINDOW	DIP32,.6	Flash Memories	2.54 mm	125 Cel	3-STATE	128KX8	128K	-40 Cel	8	YES		DUAL	R-GDIP-T32	5.25 V	4.907 mm	10000 Write/Erase Cycles	15.24 mm	Not Qualified	1048576 bit	4.75 V				NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.001 Amp		120 ns	5	YES
TMS29F256-170JE4	Texas Instruments	FLASH	INDUSTRIAL	28	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	64	15 mA	32768 words	5	NO	5	8	IN-LINE, WINDOW	DIP28,.6	Flash Memories	2.54 mm	85 Cel	3-STATE	32KX8	32K	-40 Cel	512	NO		DUAL	R-GDIP-T28	5.25 V	4.907 mm		15.24 mm	Not Qualified	262144 bit	4.75 V		64		NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.003 Amp		170 ns	5	YES
M28F256-15F113	STMicroelectronics	FLASH	COMMERCIAL	32	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		50 mA	32768 words	5	NO	5	8	IN-LINE, WINDOW	DIP32,.6	Flash Memories	2.54 mm	70 Cel	3-STATE	32KX8	32K	0 Cel		YES	TIN LEAD	DUAL	R-GDIP-T32	5.5 V	5.72 mm	1000 Write/Erase Cycles	15.24 mm	Not Qualified	262144 bit	4.5 V	1000 ERASE/PROGRAM CYCLES		e0			NOR TYPE	.0001 Amp	41.885 mm	150 ns	12	NO
M28F1001-10XF313	STMicroelectronics	FLASH	AUTOMOTIVE	32	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS			131072 words	5			8	IN-LINE, WINDOW			2.54 mm	125 Cel	3-STATE	128KX8	128K	-40 Cel				DUAL	R-GDIP-T32	5.25 V	5.72 mm		15.24 mm	Not Qualified	1048576 bit	4.75 V	1000 ERASE/PROGRAM CYCLES					NOR TYPE		41.885 mm	100 ns	12
M28F256-20F112	STMicroelectronics	FLASH	COMMERCIAL	32	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		50 mA	32768 words	5	NO	5	8	IN-LINE, WINDOW	DIP32,.6	Flash Memories	2.54 mm	70 Cel	3-STATE	32KX8	32K	0 Cel		YES	TIN LEAD	DUAL	R-GDIP-T32	5.5 V	5.72 mm	100 Write/Erase Cycles	15.24 mm	Not Qualified	262144 bit	4.5 V	100 ERASE/PROGRAM CYCLES		e0			NOR TYPE	.0001 Amp	41.885 mm	200 ns	12	NO
M28F1001-20F312	STMicroelectronics	FLASH	AUTOMOTIVE	32	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS			131072 words	5			8	IN-LINE, WINDOW			2.54 mm	125 Cel	3-STATE	128KX8	128K	-40 Cel				DUAL	R-GDIP-T32	5.5 V	5.72 mm		15.24 mm	Not Qualified	1048576 bit	4.5 V	100 ERASE/PROGRAM CYCLES					NOR TYPE		41.885 mm	200 ns	12
M28F1001-12XF312	STMicroelectronics	FLASH	AUTOMOTIVE	32	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS			131072 words	5			8	IN-LINE, WINDOW			2.54 mm	125 Cel	3-STATE	128KX8	128K	-40 Cel				DUAL	R-GDIP-T32	5.25 V	5.72 mm		15.24 mm	Not Qualified	1048576 bit	4.75 V	100 ERASE/PROGRAM CYCLES					NOR TYPE		41.885 mm	120 ns	12
M28F256-20XF113	STMicroelectronics	FLASH	COMMERCIAL	32	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS			32768 words	5			8	IN-LINE, WINDOW			2.54 mm	70 Cel	3-STATE	32KX8	32K	0 Cel				DUAL	R-GDIP-T32	5.25 V	5.72 mm		15.24 mm	Not Qualified	262144 bit	4.75 V	1000 ERASE/PROGRAM CYCLES					NOR TYPE		41.885 mm	200 ns	12
M28F1001-10XF113	STMicroelectronics	FLASH	COMMERCIAL	32	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS			131072 words	5			8	IN-LINE, WINDOW			2.54 mm	70 Cel	3-STATE	128KX8	128K	0 Cel				DUAL	R-GDIP-T32	5.25 V	5.72 mm		15.24 mm	Not Qualified	1048576 bit	4.75 V	1000 ERASE/PROGRAM CYCLES					NOR TYPE		41.885 mm	100 ns	12
M28F256-15F314	STMicroelectronics	FLASH	AUTOMOTIVE	32	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS			32768 words	5			8	IN-LINE, WINDOW			2.54 mm	125 Cel	3-STATE	32KX8	32K	-40 Cel				DUAL	R-GDIP-T32	5.5 V	5.72 mm		15.24 mm	Not Qualified	262144 bit	4.5 V	10000 ERASE/PROGRAM CYCLES					NOR TYPE		41.885 mm	150 ns	12
M28F1001-10F313	STMicroelectronics	FLASH	AUTOMOTIVE	32	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS			131072 words	5			8	IN-LINE, WINDOW			2.54 mm	125 Cel	3-STATE	128KX8	128K	-40 Cel				DUAL	R-GDIP-T32	5.5 V	5.72 mm		15.24 mm	Not Qualified	1048576 bit	4.5 V	1000 ERASE/PROGRAM CYCLES					NOR TYPE		41.885 mm	100 ns	12
M28F1001-20XF312	STMicroelectronics	FLASH	AUTOMOTIVE	32	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS			131072 words	5			8	IN-LINE, WINDOW			2.54 mm	125 Cel	3-STATE	128KX8	128K	-40 Cel				DUAL	R-GDIP-T32	5.25 V	5.72 mm		15.24 mm	Not Qualified	1048576 bit	4.75 V	100 ERASE/PROGRAM CYCLES					NOR TYPE		41.885 mm	200 ns	12
M28F256-12F312	STMicroelectronics	FLASH	AUTOMOTIVE	32	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS			32768 words	5			8	IN-LINE, WINDOW			2.54 mm	125 Cel	3-STATE	32KX8	32K	-40 Cel				DUAL	R-GDIP-T32	5.5 V	5.72 mm		15.24 mm	Not Qualified	262144 bit	4.5 V	100 ERASE/PROGRAM CYCLES					NOR TYPE		41.885 mm	120 ns	12
M28F1001-12F114	STMicroelectronics	FLASH	COMMERCIAL	32	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		50 mA	131072 words	5	NO	5	8	IN-LINE, WINDOW	DIP32,.6	Flash Memories	2.54 mm	70 Cel	3-STATE	128KX8	128K	0 Cel		YES	TIN LEAD	DUAL	R-GDIP-T32	5.5 V	5.72 mm	10000 Write/Erase Cycles	15.24 mm	Not Qualified	1048576 bit	4.5 V	10000 ERASE/PROGRAM CYCLES		e0			NOR TYPE	.0001 Amp	41.885 mm	120 ns	12	NO
M28F1001-10F112	STMicroelectronics	FLASH	COMMERCIAL	32	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		50 mA	131072 words	5	NO	5	8	IN-LINE, WINDOW	DIP32,.6	Flash Memories	2.54 mm	70 Cel	3-STATE	128KX8	128K	0 Cel		YES	TIN LEAD	DUAL	R-GDIP-T32	5.5 V	5.72 mm	100 Write/Erase Cycles	15.24 mm	Not Qualified	1048576 bit	4.5 V	100 ERASE/PROGRAM CYCLES		e0			NOR TYPE	.0001 Amp	41.885 mm	100 ns	12	NO
M28F1001-10F312	STMicroelectronics	FLASH	AUTOMOTIVE	32	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS			131072 words	5			8	IN-LINE, WINDOW			2.54 mm	125 Cel	3-STATE	128KX8	128K	-40 Cel				DUAL	R-GDIP-T32	5.5 V	5.72 mm		15.24 mm	Not Qualified	1048576 bit	4.5 V	100 ERASE/PROGRAM CYCLES					NOR TYPE		41.885 mm	100 ns	12
M28F1001-12F312	STMicroelectronics	FLASH	AUTOMOTIVE	32	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS			131072 words	5			8	IN-LINE, WINDOW			2.54 mm	125 Cel	3-STATE	128KX8	128K	-40 Cel				DUAL	R-GDIP-T32	5.5 V	5.72 mm		15.24 mm	Not Qualified	1048576 bit	4.5 V	100 ERASE/PROGRAM CYCLES					NOR TYPE		41.885 mm	120 ns	12
M28F256-20F314	STMicroelectronics	FLASH	AUTOMOTIVE	32	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS			32768 words	5			8	IN-LINE, WINDOW			2.54 mm	125 Cel	3-STATE	32KX8	32K	-40 Cel				DUAL	R-GDIP-T32	5.5 V	5.72 mm		15.24 mm	Not Qualified	262144 bit	4.5 V	10000 ERASE/PROGRAM CYCLES					NOR TYPE		41.885 mm	200 ns	12
M28F1001-20F113	STMicroelectronics	FLASH	COMMERCIAL	32	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		50 mA	131072 words	5	NO	5	8	IN-LINE, WINDOW	DIP32,.6	Flash Memories	2.54 mm	70 Cel	3-STATE	128KX8	128K	0 Cel		YES	TIN LEAD	DUAL	R-GDIP-T32	5.5 V	5.72 mm	1000 Write/Erase Cycles	15.24 mm	Not Qualified	1048576 bit	4.5 V	1000 ERASE/PROGRAM CYCLES		e0			NOR TYPE	.0001 Amp	41.885 mm	200 ns	12	NO

Flash Memory

Flash memory is a type of non-volatile computer memory that is commonly used in digital devices such as USB drives, solid-state drives, and digital cameras. It is a type of EEPROM (Electrically Erasable Programmable Read-Only Memory) that allows data to be erased and reprogrammed in blocks instead of one byte at a time. Flash memory uses a floating gate transistor to store data, which allows it to retain information even when the power is turned off.

Flash memory is widely used in digital devices because of its high capacity, small size, and fast access times. It is also more durable than other types of memory, such as hard disk drives, because it has no moving parts. This makes it ideal for use in portable devices that may be subject to physical shock or vibration.

There are two types of flash memory: NOR flash and NAND flash. NOR flash is faster than NAND flash, but it has lower density and higher cost per bit. NOR flash is typically used for code storage, such as firmware or boot code, because it provides faster access times. NAND flash has higher density and lower cost per bit, which makes it ideal for data storage applications.

Flash memory has a limited lifespan, as it can only be erased and reprogrammed a limited number of times. This is because the process of erasing and reprogramming the memory causes wear and tear on the floating gate transistor. However, modern flash memory devices have a sophisticated wear-leveling algorithm that distributes writes evenly across the memory, which extends the lifespan of the device.