WDIP Flash Memory 271

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Terminal Form	Parallel or Serial	Operating Mode	Maximum Supply Current	No. of Words	Nominal Supply Voltage / Vsup (V)	Toggle Bit	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	Command User Interface	Terminal Finish	Terminal Position	JESD-30 Code	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Endurance	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Type	Maximum Standby Current	Length	Maximum Access Time	Programming Voltage (V)	Data Polling
M28F256-15XF112	STMicroelectronics	FLASH	COMMERCIAL	32	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		32768 words	5			8	IN-LINE, WINDOW			2.54 mm	70 Cel	3-STATE	32KX8	32K	0 Cel			DUAL	R-GDIP-T32	5.25 V	5.72 mm		15.24 mm	Not Qualified	262144 bit	4.75 V	100 ERASE/PROGRAM CYCLES		NOR TYPE		41.885 mm	150 ns	12
M28F1001-20XF112	STMicroelectronics	FLASH	COMMERCIAL	32	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		131072 words	5			8	IN-LINE, WINDOW			2.54 mm	70 Cel	3-STATE	128KX8	128K	0 Cel			DUAL	R-GDIP-T32	5.25 V	5.72 mm		15.24 mm	Not Qualified	1048576 bit	4.75 V	100 ERASE/PROGRAM CYCLES		NOR TYPE		41.885 mm	200 ns	12
M28F256-10F314	STMicroelectronics	FLASH	AUTOMOTIVE	32	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		32768 words	5			8	IN-LINE, WINDOW			2.54 mm	125 Cel	3-STATE	32KX8	32K	-40 Cel			DUAL	R-GDIP-T32	5.5 V	5.72 mm		15.24 mm	Not Qualified	262144 bit	4.5 V	10000 ERASE/PROGRAM CYCLES		NOR TYPE		41.885 mm	100 ns	12
M28F1001-15XF114	STMicroelectronics	FLASH	COMMERCIAL	32	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		131072 words	5			8	IN-LINE, WINDOW			2.54 mm	70 Cel	3-STATE	128KX8	128K	0 Cel			DUAL	R-GDIP-T32	5.25 V	5.72 mm		15.24 mm	Not Qualified	1048576 bit	4.75 V	10000 ERASE/PROGRAM CYCLES		NOR TYPE		41.885 mm	150 ns	12
M28F256-10F114	STMicroelectronics	FLASH	COMMERCIAL	32	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	50 mA	32768 words	5	NO	5	8	IN-LINE, WINDOW	DIP32,.6	Flash Memories	2.54 mm	70 Cel	3-STATE	32KX8	32K	0 Cel	YES	TIN LEAD	DUAL	R-GDIP-T32	5.5 V	5.72 mm	10000 Write/Erase Cycles	15.24 mm	Not Qualified	262144 bit	4.5 V	10000 ERASE/PROGRAM CYCLES	e0	NOR TYPE	.0001 Amp	41.885 mm	100 ns	12	NO
M28F1001-20XF114	STMicroelectronics	FLASH	COMMERCIAL	32	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		131072 words	5			8	IN-LINE, WINDOW			2.54 mm	70 Cel	3-STATE	128KX8	128K	0 Cel			DUAL	R-GDIP-T32	5.25 V	5.72 mm		15.24 mm	Not Qualified	1048576 bit	4.75 V	10000 ERASE/PROGRAM CYCLES		NOR TYPE		41.885 mm	200 ns	12
M28F1001-12XF313	STMicroelectronics	FLASH	AUTOMOTIVE	32	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		131072 words	5			8	IN-LINE, WINDOW			2.54 mm	125 Cel	3-STATE	128KX8	128K	-40 Cel			DUAL	R-GDIP-T32	5.25 V	5.72 mm		15.24 mm	Not Qualified	1048576 bit	4.75 V	1000 ERASE/PROGRAM CYCLES		NOR TYPE		41.885 mm	120 ns	12
M28F256-10XF313	STMicroelectronics	FLASH	AUTOMOTIVE	32	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		32768 words	5			8	IN-LINE, WINDOW			2.54 mm	125 Cel	3-STATE	32KX8	32K	-40 Cel			DUAL	R-GDIP-T32	5.25 V	5.72 mm		15.24 mm	Not Qualified	262144 bit	4.75 V	1000 ERASE/PROGRAM CYCLES		NOR TYPE		41.885 mm	100 ns	12
M28F1001-12XF314	STMicroelectronics	FLASH	AUTOMOTIVE	32	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		131072 words	5			8	IN-LINE, WINDOW			2.54 mm	125 Cel	3-STATE	128KX8	128K	-40 Cel			DUAL	R-GDIP-T32	5.25 V	5.72 mm		15.24 mm	Not Qualified	1048576 bit	4.75 V	10000 ERASE/PROGRAM CYCLES		NOR TYPE		41.885 mm	120 ns	12
M28F1001-10XF112	STMicroelectronics	FLASH	COMMERCIAL	32	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		131072 words	5			8	IN-LINE, WINDOW			2.54 mm	70 Cel	3-STATE	128KX8	128K	0 Cel			DUAL	R-GDIP-T32	5.25 V	5.72 mm		15.24 mm	Not Qualified	1048576 bit	4.75 V	100 ERASE/PROGRAM CYCLES		NOR TYPE		41.885 mm	100 ns	12
M28F256-10XF314	STMicroelectronics	FLASH	AUTOMOTIVE	32	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		32768 words	5			8	IN-LINE, WINDOW			2.54 mm	125 Cel	3-STATE	32KX8	32K	-40 Cel			DUAL	R-GDIP-T32	5.25 V	5.72 mm		15.24 mm	Not Qualified	262144 bit	4.75 V	10000 ERASE/PROGRAM CYCLES		NOR TYPE		41.885 mm	100 ns	12
M28F1001-10F314	STMicroelectronics	FLASH	AUTOMOTIVE	32	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		131072 words	5			8	IN-LINE, WINDOW			2.54 mm	125 Cel	3-STATE	128KX8	128K	-40 Cel			DUAL	R-GDIP-T32	5.5 V	5.72 mm		15.24 mm	Not Qualified	1048576 bit	4.5 V	10000 ERASE/PROGRAM CYCLES		NOR TYPE		41.885 mm	100 ns	12
M28F1001-20XF314	STMicroelectronics	FLASH	AUTOMOTIVE	32	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		131072 words	5			8	IN-LINE, WINDOW			2.54 mm	125 Cel	3-STATE	128KX8	128K	-40 Cel			DUAL	R-GDIP-T32	5.25 V	5.72 mm		15.24 mm	Not Qualified	1048576 bit	4.75 V	10000 ERASE/PROGRAM CYCLES		NOR TYPE		41.885 mm	200 ns	12
M28F256-15F312	STMicroelectronics	FLASH	AUTOMOTIVE	32	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		32768 words	5			8	IN-LINE, WINDOW			2.54 mm	125 Cel	3-STATE	32KX8	32K	-40 Cel			DUAL	R-GDIP-T32	5.5 V	5.72 mm		15.24 mm	Not Qualified	262144 bit	4.5 V	100 ERASE/PROGRAM CYCLES		NOR TYPE		41.885 mm	150 ns	12
M28F256-15XF313	STMicroelectronics	FLASH	AUTOMOTIVE	32	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		32768 words	5			8	IN-LINE, WINDOW			2.54 mm	125 Cel	3-STATE	32KX8	32K	-40 Cel			DUAL	R-GDIP-T32	5.25 V	5.72 mm		15.24 mm	Not Qualified	262144 bit	4.75 V	1000 ERASE/PROGRAM CYCLES		NOR TYPE		41.885 mm	150 ns	12
M28F1001-15XF314	STMicroelectronics	FLASH	AUTOMOTIVE	32	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		131072 words	5			8	IN-LINE, WINDOW			2.54 mm	125 Cel	3-STATE	128KX8	128K	-40 Cel			DUAL	R-GDIP-T32	5.25 V	5.72 mm		15.24 mm	Not Qualified	1048576 bit	4.75 V	10000 ERASE/PROGRAM CYCLES		NOR TYPE		41.885 mm	150 ns	12
M28F1001-12F314	STMicroelectronics	FLASH	AUTOMOTIVE	32	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		131072 words	5			8	IN-LINE, WINDOW			2.54 mm	125 Cel	3-STATE	128KX8	128K	-40 Cel			DUAL	R-GDIP-T32	5.5 V	5.72 mm		15.24 mm	Not Qualified	1048576 bit	4.5 V	10000 ERASE/PROGRAM CYCLES		NOR TYPE		41.885 mm	120 ns	12
M28F256-12XF113	STMicroelectronics	FLASH	COMMERCIAL	32	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		32768 words	5			8	IN-LINE, WINDOW			2.54 mm	70 Cel	3-STATE	32KX8	32K	0 Cel			DUAL	R-GDIP-T32	5.25 V	5.72 mm		15.24 mm	Not Qualified	262144 bit	4.75 V	1000 ERASE/PROGRAM CYCLES		NOR TYPE		41.885 mm	120 ns	12
M28F256-10F113	STMicroelectronics	FLASH	COMMERCIAL	32	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	50 mA	32768 words	5	NO	5	8	IN-LINE, WINDOW	DIP32,.6	Flash Memories	2.54 mm	70 Cel	3-STATE	32KX8	32K	0 Cel	YES	TIN LEAD	DUAL	R-GDIP-T32	5.5 V	5.72 mm	1000 Write/Erase Cycles	15.24 mm	Not Qualified	262144 bit	4.5 V	1000 ERASE/PROGRAM CYCLES	e0	NOR TYPE	.0001 Amp	41.885 mm	100 ns	12	NO
M28F1001-15F114	STMicroelectronics	FLASH	COMMERCIAL	32	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	50 mA	131072 words	5	NO	5	8	IN-LINE, WINDOW	DIP32,.6	Flash Memories	2.54 mm	70 Cel	3-STATE	128KX8	128K	0 Cel	YES	TIN LEAD	DUAL	R-GDIP-T32	5.5 V	5.72 mm	10000 Write/Erase Cycles	15.24 mm	Not Qualified	1048576 bit	4.5 V	10000 ERASE/PROGRAM CYCLES	e0	NOR TYPE	.0001 Amp	41.885 mm	150 ns	12	NO
M28F256-20XF313	STMicroelectronics	FLASH	AUTOMOTIVE	32	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		32768 words	5			8	IN-LINE, WINDOW			2.54 mm	125 Cel	3-STATE	32KX8	32K	-40 Cel			DUAL	R-GDIP-T32	5.25 V	5.72 mm		15.24 mm	Not Qualified	262144 bit	4.75 V	1000 ERASE/PROGRAM CYCLES		NOR TYPE		41.885 mm	200 ns	12
M28F1001-12F112	STMicroelectronics	FLASH	COMMERCIAL	32	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	50 mA	131072 words	5	NO	5	8	IN-LINE, WINDOW	DIP32,.6	Flash Memories	2.54 mm	70 Cel	3-STATE	128KX8	128K	0 Cel	YES	TIN LEAD	DUAL	R-GDIP-T32	5.5 V	5.72 mm	100 Write/Erase Cycles	15.24 mm	Not Qualified	1048576 bit	4.5 V	100 ERASE/PROGRAM CYCLES	e0	NOR TYPE	.0001 Amp	41.885 mm	120 ns	12	NO
M28F256-15XF312	STMicroelectronics	FLASH	AUTOMOTIVE	32	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		32768 words	5			8	IN-LINE, WINDOW			2.54 mm	125 Cel	3-STATE	32KX8	32K	-40 Cel			DUAL	R-GDIP-T32	5.25 V	5.72 mm		15.24 mm	Not Qualified	262144 bit	4.75 V	100 ERASE/PROGRAM CYCLES		NOR TYPE		41.885 mm	150 ns	12
M28F1001-20F313	STMicroelectronics	FLASH	AUTOMOTIVE	32	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		131072 words	5			8	IN-LINE, WINDOW			2.54 mm	125 Cel	3-STATE	128KX8	128K	-40 Cel			DUAL	R-GDIP-T32	5.5 V	5.72 mm		15.24 mm	Not Qualified	1048576 bit	4.5 V	1000 ERASE/PROGRAM CYCLES		NOR TYPE		41.885 mm	200 ns	12
M28F256-12F314	STMicroelectronics	FLASH	AUTOMOTIVE	32	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		32768 words	5			8	IN-LINE, WINDOW			2.54 mm	125 Cel	3-STATE	32KX8	32K	-40 Cel			DUAL	R-GDIP-T32	5.5 V	5.72 mm		15.24 mm	Not Qualified	262144 bit	4.5 V	10000 ERASE/PROGRAM CYCLES		NOR TYPE		41.885 mm	120 ns	12
M28F1001-10XF312	STMicroelectronics	FLASH	AUTOMOTIVE	32	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		131072 words	5			8	IN-LINE, WINDOW			2.54 mm	125 Cel	3-STATE	128KX8	128K	-40 Cel			DUAL	R-GDIP-T32	5.25 V	5.72 mm		15.24 mm	Not Qualified	1048576 bit	4.75 V	100 ERASE/PROGRAM CYCLES		NOR TYPE		41.885 mm	100 ns	12
M28F1001-10F113	STMicroelectronics	FLASH	COMMERCIAL	32	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	50 mA	131072 words	5	NO	5	8	IN-LINE, WINDOW	DIP32,.6	Flash Memories	2.54 mm	70 Cel	3-STATE	128KX8	128K	0 Cel	YES	TIN LEAD	DUAL	R-GDIP-T32	5.5 V	5.72 mm	1000 Write/Erase Cycles	15.24 mm	Not Qualified	1048576 bit	4.5 V	1000 ERASE/PROGRAM CYCLES	e0	NOR TYPE	.0001 Amp	41.885 mm	100 ns	12	NO
M28F1001-12F113	STMicroelectronics	FLASH	COMMERCIAL	32	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	50 mA	131072 words	5	NO	5	8	IN-LINE, WINDOW	DIP32,.6	Flash Memories	2.54 mm	70 Cel	3-STATE	128KX8	128K	0 Cel	YES	TIN LEAD	DUAL	R-GDIP-T32	5.5 V	5.72 mm	1000 Write/Erase Cycles	15.24 mm	Not Qualified	1048576 bit	4.5 V	1000 ERASE/PROGRAM CYCLES	e0	NOR TYPE	.0001 Amp	41.885 mm	120 ns	12	NO
M28F256-12XF112	STMicroelectronics	FLASH	COMMERCIAL	32	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		32768 words	5			8	IN-LINE, WINDOW			2.54 mm	70 Cel	3-STATE	32KX8	32K	0 Cel			DUAL	R-GDIP-T32	5.25 V	5.72 mm		15.24 mm	Not Qualified	262144 bit	4.75 V	100 ERASE/PROGRAM CYCLES		NOR TYPE		41.885 mm	120 ns	12
M28F1001-15XF113	STMicroelectronics	FLASH	COMMERCIAL	32	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		131072 words	5			8	IN-LINE, WINDOW			2.54 mm	70 Cel	3-STATE	128KX8	128K	0 Cel			DUAL	R-GDIP-T32	5.25 V	5.72 mm		15.24 mm	Not Qualified	1048576 bit	4.75 V	1000 ERASE/PROGRAM CYCLES		NOR TYPE		41.885 mm	150 ns	12
M28F256-12F113	STMicroelectronics	FLASH	COMMERCIAL	32	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	50 mA	32768 words	5	NO	5	8	IN-LINE, WINDOW	DIP32,.6	Flash Memories	2.54 mm	70 Cel	3-STATE	32KX8	32K	0 Cel	YES	TIN LEAD	DUAL	R-GDIP-T32	5.5 V	5.72 mm	1000 Write/Erase Cycles	15.24 mm	Not Qualified	262144 bit	4.5 V	1000 ERASE/PROGRAM CYCLES	e0	NOR TYPE	.0001 Amp	41.885 mm	120 ns	12	NO

Flash Memory

Flash memory is a type of non-volatile computer memory that is commonly used in digital devices such as USB drives, solid-state drives, and digital cameras. It is a type of EEPROM (Electrically Erasable Programmable Read-Only Memory) that allows data to be erased and reprogrammed in blocks instead of one byte at a time. Flash memory uses a floating gate transistor to store data, which allows it to retain information even when the power is turned off.

Flash memory is widely used in digital devices because of its high capacity, small size, and fast access times. It is also more durable than other types of memory, such as hard disk drives, because it has no moving parts. This makes it ideal for use in portable devices that may be subject to physical shock or vibration.

There are two types of flash memory: NOR flash and NAND flash. NOR flash is faster than NAND flash, but it has lower density and higher cost per bit. NOR flash is typically used for code storage, such as firmware or boot code, because it provides faster access times. NAND flash has higher density and lower cost per bit, which makes it ideal for data storage applications.

Flash memory has a limited lifespan, as it can only be erased and reprogrammed a limited number of times. This is because the process of erasing and reprogramming the memory causes wear and tear on the floating gate transistor. However, modern flash memory devices have a sophisticated wear-leveling algorithm that distributes writes evenly across the memory, which extends the lifespan of the device.