RECTANGULAR Flash Memory 2,400+

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Screening Level	Terminal Form	Parallel or Serial	Operating Mode	Sector Size (Words)	Maximum Supply Current	No. of Words	Nominal Supply Voltage / Vsup (V)	Toggle Bit	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Alternate Memory Width	Sub-Category	Minimum Data Retention Time	Terminal Pitch	Maximum Operating Temperature	Reverse Pinout	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	No. of Sectors/Size	Command User Interface	Terminal Finish	Ready or Busy	Terminal Position	No. of Ports	Write Protection	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Endurance	Maximum Clock Frequency (fCLK)	Width	Qualification	Maximum Write Cycle Time (tWC)	Serial Bus Type	Boot Block	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	Page Size (words)	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Type	Maximum Standby Current	Length	Common Flash Interface	Maximum Access Time	Programming Voltage (V)	Data Polling
MX25U6432FZNI02	Macronix	FLASH	INDUSTRIAL	8	HSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS		25 mA	8388608 words	1.8			8	SMALL OUTLINE, HEAT SINK/SLUG	SOLCC8,.25	2		20	1.27 mm	85 Cel			8MX8	8M	-40 Cel			Tin (Sn)		DUAL		HARDWARE/SOFTWARE	R-PDSO-N8		2 V	.8 mm		133 MHz	5 mm					67108864 bit	1.65 V	64MX1BIT		e3			NOR TYPE	.000005 Amp	6 mm			1.8
MX25V4035FZUI	Macronix	FLASH	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS			1048576 words	3			4	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE		2			1.27 mm	85 Cel			1MX4	1M	-40 Cel					DUAL			R-PDSO-N8		3.6 V	.8 mm		108 MHz	5 mm					4194304 bit	2.3 V	ALSO IT CAN BE CONFIGURED AS 4M X 1 BIT			NOT SPECIFIED	NOT SPECIFIED			6 mm			3
MX29GL128FHXFI-70G	Macronix	FLASH	INDUSTRIAL	64	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	128K	100 mA	8388608 words	3	YES	3/3.3	16	GRID ARRAY, LOW PROFILE	BGA64,8X8,40	8	Flash Memories		1 mm	85 Cel			8MX16	8M	-40 Cel	128	YES		YES	BOTTOM			R-PBGA-B64		3.6 V	1.4 mm			11 mm	Not Qualified				134217728 bit	2.7 V		8/16		40	260	NOR TYPE	.00003 Amp	13 mm	YES	70 ns	3	YES
MX29LV640EBTI-70G	Macronix	FLASH	INDUSTRIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS			4194304 words	3			16	SMALL OUTLINE, THIN PROFILE		8			.5 mm	85 Cel			4MX16	4M	-40 Cel			Tin (Sn)		DUAL			R-PDSO-G48		3.6 V	1.2 mm			12 mm	Not Qualified			BOTTOM	67108864 bit	2.7 V	BOTTOM BOOT BLOCK		e3					18.4 mm		70 ns	3
MX30LF1G18AC-TI	Macronix	FLASH	INDUSTRIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS			131072 words	3			8	SMALL OUTLINE, THIN PROFILE					.5 mm	85 Cel			128KX8	128K	-40 Cel			TIN		DUAL			R-PDSO-G48	3	3.6 V	1.2 mm			12 mm					1048576 bit	2.7 V			e3			SLC NAND TYPE		18.4 mm			3
NAND256W3A2BN6F	STMicroelectronics	FLASH	INDUSTRIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	16K	20 mA	33554432 words	3	NO	3/3.3	8	SMALL OUTLINE, THIN PROFILE	TSSOP48,.8,20		Flash Memories		.5 mm	85 Cel			32MX8	32M	-40 Cel	2K	YES	TIN/TIN BISMUTH	YES	DUAL			R-PDSO-G48		3.6 V	1.2 mm			12 mm	Not Qualified				268435456 bit	2.7 V		512	e3/e6	NOT SPECIFIED	260	SLC NAND TYPE	.00005 Amp	18.4 mm		12000 ns	3	NO
RC28F256P33TF	Micron Technology	FLASH	INDUSTRIAL	64	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS	16K,64K	31 mA	16777216 words	3	NO	2.5/3.3	16	GRID ARRAY, THIN PROFILE	BGA64,8X8,40		Flash Memories		1 mm	85 Cel			16MX16	16M	-40 Cel	4,255	YES	TIN LEAD SILVER		BOTTOM			R-PBGA-B64		3.6 V	1.2 mm			10 mm	Not Qualified			TOP	268435456 bit	2.3 V	TOP BOOT BLOCK, SYNCHRONOUS BURST MODE OPERATION ALSO AVAILABLE		e0			NOR TYPE	.00021 Amp	13 mm	YES	95 ns	2.7	NO
RC28F256P33TFA	Micron Technology	FLASH	INDUSTRIAL	64	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS	16K,64K	31 mA	16777216 words	3	NO	2.5/3.3	16	GRID ARRAY, THIN PROFILE	BGA64,8X8,40		Flash Memories		1 mm	85 Cel			16MX16	16M	-40 Cel	4,255	YES	TIN LEAD SILVER		BOTTOM			R-PBGA-B64		3.6 V	1.2 mm			10 mm	Not Qualified			TOP	268435456 bit	2.3 V	ASYNCHRONOUS READ MODE		e0			NOR TYPE	.00021 Amp	13 mm	YES	95 ns	2.7	NO
S25FL128SAGBHIA13	Infineon Technologies	FLASH	INDUSTRIAL	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS		100 mA	33554432 words	3		3/3.3	4	GRID ARRAY, THIN PROFILE	BGA24,5X5,40	2	Flash Memories	20	1 mm	85 Cel			32MX4	32M	-40 Cel					BOTTOM		HARDWARE/SOFTWARE	R-PBGA-B24	3	3.6 V	1.2 mm	100000 Write/Erase Cycles	133 MHz	6 mm	Not Qualified	500 ms	SPI		134217728 bit	2.7 V	ALSO CONFIGURABLE AS 128M X 1					NOR TYPE	.0001 Amp	8 mm			3
S25FL128SAGMFIR03	Infineon Technologies	FLASH	INDUSTRIAL	16	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		100 mA	33554432 words	3		3/3.3	4	SMALL OUTLINE	SOP16,.4	2	Flash Memories	20	1.27 mm	85 Cel			32MX4	32M	-40 Cel			MATTE TIN		DUAL		HARDWARE/SOFTWARE	R-PDSO-G16	3	3.6 V	2.65 mm	100000 Write/Erase Cycles	133 MHz	7.5 mm	Not Qualified	500 ms	SPI		134217728 bit	2.7 V	IT ALSO CONFIGURED AS 256M X 1		e3	30	260	NOR TYPE	.0001 Amp	10.3 mm			3
S25FL128SDPMFIG11	Infineon Technologies	FLASH	INDUSTRIAL	16	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		100 mA	16777216 words	3		3/3.3	8	SMALL OUTLINE	SOP16,.4	2	Flash Memories	20	1.27 mm	85 Cel			16MX8	16M	-40 Cel			MATTE TIN		DUAL		HARDWARE/SOFTWARE	R-PDSO-G16	3	3.6 V	2.65 mm	100000 Write/Erase Cycles	133 MHz	7.5 mm	Not Qualified	500 ms	SPI	BOTTOM	134217728 bit	2.7 V	ALSO CONFIGURABLE AS 128M X 1		e3			NOR TYPE	.0001 Amp	10.3 mm			3
SDCS2/32GB-2P1A	Kingston Technology Company	FLASH CARD	OTHER		DIE	RECTANGULAR	UNSPECIFIED	YES	1	CMOS		NO LEAD					34359738368 words	3.3			8	UNCASED CHIP						85 Cel			32GX8	32G	-25 Cel					UPPER			R-XUUC-N											274877906944 bit							NOR TYPE					3.3
SDCS2/32GB-3P1A	Kingston Technology Company	FLASH CARD	OTHER		DIE	RECTANGULAR	UNSPECIFIED	YES	1	CMOS		NO LEAD					34359738368 words	3.3			8	UNCASED CHIP						85 Cel			32GX8	32G	-25 Cel					UPPER			R-XUUC-N											274877906944 bit							NOR TYPE					3.3
SDINBDG4-32G-I2	Western Digital	FLASH CARD	OTHER	153	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS			34359738368 words	3.3			8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA153,14X14,20				.5 mm	85 Cel			32GX8	32G	-25 Cel					BOTTOM			R-PBGA-B153		3.6 V	1 mm	3000 Write/Erase Cycles		11 mm					274877906944 bit	2.7 V						MLC NAND TYPE		13.5 mm
SDSDQ-4096	Western Digital	FLASH CARD	OTHER	8	DIE	RECTANGULAR	UNSPECIFIED	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS			4294967296 words				8	UNCASED CHIP					1.1 mm	85 Cel	NO		4GX8	4G	-25 Cel		YES			UPPER		SOFTWARE	R-XUUC-N8		3.6 V	.95 mm		50 MHz	11 mm					34359738368 bit	2.7 V						NAND TYPE		15 mm	NO		2.7	NO
SFEM008GB1EA1TO-I-GE-111-STD	Swissbit Ag	FLASH CARD		153	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL					8589934592 words	3.3			8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH					.5 mm	85 Cel			8GX8	8G	-40 Cel					BOTTOM			R-PBGA-B153		3.6 V	1 mm			11.5 mm					68719476736 bit	2.7 V				NOT SPECIFIED	NOT SPECIFIED	MLC NAND TYPE		13 mm			3.3
SM662GXB-BDS	Silicon Motion Technology	FLASH CARD		153		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL					34359738368 words				8							85 Cel			32GX8	32G	-25 Cel					BOTTOM			R-PBGA-B153											274877906944 bit							MLC NAND TYPE
SST25PF040C-40I/SN	Microchip Technology	FLASH	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	TS 16949	GULL WING	SERIAL	SYNCHRONOUS		15 mA	4194304 words	3.3			1	SMALL OUTLINE	SOP8,.23			20	1.27 mm	85 Cel		3-STATE	4MX1	4M	-40 Cel			MATTE TIN		DUAL	1	SOFTWARE	R-PDSO-G8	3	3.6 V	1.75 mm	100000 Write/Erase Cycles	40 MHz	3.9 mm			SPI		4194304 bit	2.3 V			e3	40	260	NOR TYPE	.00001 Amp	4.9 mm			3.3
SST25VF080B-50-4I-QAF	Microchip Technology	FLASH	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS		30 mA	8388608 words			3/3.3	1	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.25		Flash Memories	100	1.27 mm	85 Cel		3-STATE	8MX1	8M	-40 Cel			NICKEL PALLADIUM GOLD		DUAL	1	HARDWARE/SOFTWARE	R-PDSO-N8		3.6 V	.8 mm	100000 Write/Erase Cycles	50 MHz	5 mm	Not Qualified		SPI		8388608 bit	2.7 V			e4			NOR TYPE	.00003 Amp	6 mm
SST26VF016BEUIT-104I/SN	Microchip Technology	FLASH	INDUSTRIAL	8	LSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	TS 16949	GULL WING	SERIAL	SYNCHRONOUS		25 mA	16777216 words	3			1	SMALL OUTLINE, LOW PROFILE	SOP8,.3			100	1.27 mm	85 Cel		3-STATE	16MX1	16M	-40 Cel					DUAL	1	HARDWARE/SOFTWARE	R-PDSO-C48		3.6 V	1.68 mm	100000 Write/Erase Cycles	104 MHz	3.9 mm			SPI		16777216 bit	2.7 V						NOR TYPE	.000025 Amp	4.89 mm			3
SST26VF064B-104V/MN	Microchip Technology	FLASH	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	NO LEAD	SERIAL	SYNCHRONOUS		25 mA	67108864 words	3			1	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.3			100	1.27 mm	105 Cel		3-STATE	64MX1	64M	-40 Cel			MATTE TIN		DUAL	1	HARDWARE/SOFTWARE	R-PDSO-N8		3.6 V	.8 mm	100000 Write/Erase Cycles	104 MHz	6 mm			SPI		67108864 bit	2.7 V			e3			NOR TYPE	.000045 Amp	8 mm			3
SST39SF020A-70-4C-WHE	Microchip Technology	FLASH	COMMERCIAL	32	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	4K	35 mA	262144 words	5	YES	5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP32,.56,20		Flash Memories	100	.5 mm	70 Cel		3-STATE	256KX8	256K	0 Cel	64	YES	Matte Tin (Sn)		DUAL	1		R-PDSO-G32	3	5.5 V	1.2 mm	100000 Write/Erase Cycles		8 mm	Not Qualified				2097152 bit	4.5 V			e3	40	260	NOR TYPE	.0001 Amp	12.4 mm		70 ns	5	YES
SST39VF1681-70-4I-EKE	Microchip Technology	FLASH	INDUSTRIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	4K	35 mA	2097152 words	3	YES	3/3.3	8	SMALL OUTLINE, THIN PROFILE	TSSOP48,.8,20		Flash Memories	100	.5 mm	85 Cel		3-STATE	2MX8	2M	-40 Cel	512	YES	MATTE TIN	YES	DUAL	1		R-PDSO-G48	3	3.6 V	1.2 mm	100000 Write/Erase Cycles		12 mm	Not Qualified			BOTTOM	16777216 bit	2.7 V	BOTTOM BOOT BLOCK		e3	40	260	NOR TYPE	.00002 Amp	18.4 mm	YES	70 ns	3	YES
TC58CVG2S0HRAIG	Toshiba	FLASH	INDUSTRIAL	8	SON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	ASYNCHRONOUS			1073741824 words				4	SMALL OUTLINE		2				85 Cel			1GX4	1G	-40 Cel					DUAL			R-PDSO-N8		3.6 V									4294967296 bit	2.7 V	IT ALSO ORGANIZED AS 4G X 1			NOT SPECIFIED	NOT SPECIFIED						2.7
6ES7954-8LE03-0AA0	Siemens	FLASH CARD			DIE	RECTANGULAR	UNSPECIFIED	YES	1	CMOS		NO LEAD		ASYNCHRONOUS			12582912 words	3.3			8	UNCASED CHIP									12MX8	12M						UPPER			R-XUUC-N											100663296 bit					NOT SPECIFIED	NOT SPECIFIED						3.3
AM29F800BB-55SF	Spansion	FLASH	INDUSTRIAL	44	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	60 mA	524288 words	5	YES	5	16	SMALL OUTLINE	SOP44,.63	8	Flash Memories		1.27 mm	85 Cel			512KX16	512K	-40 Cel	1,2,1,15	YES	MATTE TIN	YES	DUAL			R-PDSO-G44	3	5.5 V	2.8 mm	1000000 Write/Erase Cycles		13.3 mm	Not Qualified			BOTTOM	8388608 bit	4.5 V	BOTTOM BOOT BLOCK		e3	40	260	NOR TYPE	.001 Amp	28.2 mm		55 ns	5	YES
AM29F800BB-90EC	Spansion	FLASH	COMMERCIAL	48	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	60 mA	524288 words	5	YES	5	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP48,.8,20	8	Flash Memories		.5 mm	70 Cel			512KX16	512K	0 Cel	1,2,1,15	YES	TIN LEAD	YES	DUAL			R-PDSO-G48	3	5.5 V	1.2 mm	1000000 Write/Erase Cycles		12 mm	Not Qualified			BOTTOM	8388608 bit	4.5 V	BOTTOM BOOT BLOCK		e0		260	NOR TYPE	.001 Amp	18.4 mm		90 ns	5	YES
AM29LV040B-90JI	Spansion	FLASH	INDUSTRIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	64K	30 mA	524288 words	3	YES	3/3.3	8	CHIP CARRIER	LDCC32,.5X.6		Flash Memories		1.27 mm	85 Cel			512KX8	512K	-40 Cel	8	YES	TIN LEAD		QUAD			R-PQCC-J32	3	3.6 V	3.556 mm	1000000 Write/Erase Cycles		11.43 mm	Not Qualified				4194304 bit	2.7 V			e0		260	NOR TYPE	.000005 Amp	13.97 mm		90 ns	3	YES
AT25DF512C-SSHN-T	Renesas Electronics	FLASH	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		18 mA	65536 words	3			8	SMALL OUTLINE	SOP8,.25			20	1.27 mm	85 Cel		3-STATE	64KX8	64K	-40 Cel					DUAL		HARDWARE/SOFTWARE	R-PDSO-G8	1	3.6 V	1.75 mm	100000 Write/Erase Cycles	104 MHz	3.9 mm			SPI		524288 bit	2.3 V						NOR TYPE	.000015 Amp	4.925 mm			3
AT25DQ321-SH-B	Atmel	FLASH	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS			33554432 words				1	SMALL OUTLINE					1.27 mm	85 Cel			32MX1	32M	-40 Cel			NICKEL PALLADIUM GOLD		DUAL			R-PDSO-G8	1	3.6 V	2.16 mm		100 MHz	5.24 mm					33554432 bit	2.7 V			e4		260	NOR TYPE		5.29 mm			2.7
AT25SF128A-SHBHD-T	Renesas Electronics	FLASH	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		20 mA	16777216 words				8	SMALL OUTLINE	SOP8,.3			10	1.27 mm	105 Cel		3-STATE	16MX8	16M	-40 Cel					DUAL		HARDWARE/SOFTWARE	R-PDSO-G8	1	3.6 V	2.16 mm	10000 Write/Erase Cycles	108 MHz	5.24 mm			SPI		134217728 bit	2.7 V				NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.00003 Amp	5.29 mm
AT25SF161B-MHB-T	Renesas Electronics	FLASH	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS		20 mA	2097152 words	3			8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.25			20	1.27 mm	85 Cel		3-STATE	2MX8	2M	-40 Cel					DUAL		HARDWARE/SOFTWARE	R-PDSO-N8	1	3.6 V	.6 mm	100000 Write/Erase Cycles	108 MHz	5 mm			SPI		16777216 bit	2.7 V						NOR TYPE	.00003 Amp	6 mm			3
AT25XE321D-UUN-T	Renesas Electronics	FLASH	INDUSTRIAL	8	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS		16.5 mA	2097152 words	3.3			16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA12,5X7,14/8			20	.35 mm	85 Cel		3-STATE	2MX16	2M	-40 Cel					BOTTOM		HARDWARE/SOFTWARE	R-PBGA-B12	1	3.6 V	.461 mm	100000 Write/Erase Cycles	133 MHz	1.767 mm			SPI		33554432 bit	2.7 V	ALSO OPERATES AT 108MHZ @1.65V MINIMUM SUPPLY					NOR TYPE	.00005 Amp	2.387 mm			1.8
AT45DB021D-SH-T	Renesas Electronics	FLASH	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS			2097152 words	3			1	SMALL OUTLINE					1.27 mm	85 Cel			2MX1	2M	-40 Cel			Nickel/Palladium/Gold (Ni/Pd/Au)		DUAL			R-PDSO-G8	1	3.6 V	2.16 mm		66 MHz	5.24 mm					2097152 bit	2.7 V			e4		260			5.29 mm			2.7
AT45DB041B-SU	Atmel	FLASH	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		10 mA	4194304 words	3		3/3.3	1	SMALL OUTLINE	SOP8,.3		Flash Memories		1.27 mm	85 Cel			4MX1	4M	-40 Cel			Matte Tin (Sn)		DUAL		HARDWARE	R-PDSO-G8	1	3.6 V	2.16 mm		20 MHz	5.24 mm	Not Qualified		SPI		4194304 bit	2.7 V	ORGANIZED AS 2048 PAGES OF 264 BYTES EACH		e3	40	260	NOR TYPE	.00001 Amp	5.29 mm			2.7
AT45DB321E-MWHF-T	Renesas Electronics	FLASH	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS			33554432 words	3			1	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE					1.27 mm	85 Cel			32MX1	32M	-40 Cel			NICKEL PALLADIUM GOLD		DUAL			R-PDSO-N8	3	3.6 V	1 mm		85 MHz	6 mm					33554432 bit	2.3 V			e4		260			8 mm			3
ATXP032-CCUE-T	Dialog Semiconductor	FLASH	INDUSTRIAL	24	VBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS		37 mA	4194304 words	1.8			8	GRID ARRAY, VERY THIN PROFILE	BGA24,5X5,40			20	1 mm	85 Cel		3-STATE	4MX8	4M	-40 Cel			MATTE TIN		BOTTOM		HARDWARE/SOFTWARE	S-PBGA-B24		1.95 V	1 mm	100000 Write/Erase Cycles	150 MHz	6 mm			SPI		33554432 bit	1.7 V			e3			NOR TYPE	.000001 Amp	8 mm
CAT28F001G-12BT	Onsemi	FLASH	COMMERCIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	8K,4K,112K	30 mA	131072 words	5	NO	5	8	CHIP CARRIER	LDCC32,.5X.6		Flash Memories		1.27 mm	70 Cel			128KX8	128K	0 Cel	1,2,1	YES	TIN		QUAD			R-PQCC-J32	3	5.5 V	3.55 mm	100000 Write/Erase Cycles		11.43 mm	Not Qualified			BOTTOM	1048576 bit	4.5 V	BOTTOM BOOT BLOCK		e3		260	NOR TYPE	.000001 Amp	13.97 mm		120 ns	12	NO
EPC4QC100N	Intel	EEPROM	COMMERCIAL	100	QFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	SYNCHRONOUS		90 mA	4194304 words	3.3		3.3	1	FLATPACK			Flash Memories			70 Cel		3-STATE	4MX1	4M	0 Cel			MATTE TIN		QUAD			R-PQFP-G100	3	3.6 V		100000 Write/Erase Cycles	66.7 MHz		Not Qualified				4194304 bit	3 V			e3			NOR TYPE	.00015 Amp
H27U518S2CTR-BC	Sk Hynix	FLASH	COMMERCIAL	48	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		GULL WING	PARALLEL		16K	30 mA	67108864 words		NO	3/3.3	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP48,.8,20		Flash Memories		.5 mm	70 Cel			64MX8	64M	0 Cel	4K	YES		YES	DUAL			R-PDSO-G48							Not Qualified				536870912 bit			512				SLC NAND TYPE	.00005 Amp			18 ns		NO
IS25WP064A-JLLE-TR	Integrated Silicon Solution	FLASH	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS			8388608 words	1.8			8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE		1			1.27 mm	105 Cel			8MX8	8M	-40 Cel					DUAL			R-PDSO-N8		1.95 V	.85 mm		133 MHz	6 mm					67108864 bit	1.65 V				NOT SPECIFIED	NOT SPECIFIED			8 mm			1.8
M29W800DT70N6E	STMicroelectronics	FLASH	INDUSTRIAL	48	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	20 mA	524288 words	3	YES	3/3.3	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP48,.8,20	8	Flash Memories		.5 mm	85 Cel			512KX16	512K	-40 Cel	1,2,1,15	YES	TIN/TIN BISMUTH	YES	DUAL			R-PDSO-G48		3.6 V	1.2 mm			12 mm	Not Qualified			TOP	8388608 bit	2.7 V	TOP BOOT BLOCK		e3/e6	NOT SPECIFIED	260	NOR TYPE	.0001 Amp	18.4 mm	YES	70 ns	3	YES
MT25QU512ABB8E12-0AUT	Micron Technology	FLASH	AUTOMOTIVE	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	SERIAL	SYNCHRONOUS			67108864 words	1.8			8	GRID ARRAY, THIN PROFILE		1			1 mm	125 Cel			64MX8	64M	-40 Cel			TIN SILVER COPPER		BOTTOM			R-PBGA-B24		2 V	1.2 mm		166 MHz	6 mm					536870912 bit	1.7 V			e1	30	260			8 mm			1.8
MT29F8G08ADADAH4-IT:DTR	Micron Technology	FLASH		63	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	128K	35 mA	1073741824 words	3.3	NO		8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA63,10X12,32			10	.8 mm	85 Cel		3-STATE	1GX8	1G	-40 Cel	8K	YES		YES	BOTTOM			R-PBGA-B63		3.6 V	1 mm	100000 Write/Erase Cycles		9 mm					8589934592 bit	2.7 V		2K				SLC NAND TYPE	.0001 Amp	11 mm			3.3	NO
MTFC4GMXEA-WT	Micron Technology	Embedded MMC		153	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL		SYNCHRONOUS		80 mA	4294967296 words	1.8			8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA153,14X14,20				.5 mm	85 Cel		OPEN-DRAIN	4GX8	4G	-25 Cel					BOTTOM		HARDWARE	R-PBGA-B153		1.95 V	.8 mm		52 MHz	11.5 mm					34359738368 bit	1.65 V						NAND TYPE		13 mm			1.8
MX25L12833FZ2I-10G	Macronix	FLASH	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS		25 mA	16777216 words	3			8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.3	4		20	1.27 mm	85 Cel			16MX8	16M	-40 Cel			TIN		DUAL		HARDWARE/SOFTWARE	R-PDSO-N8		3.6 V	.8 mm	100000 Write/Erase Cycles	133 MHz	6 mm			SPI		134217728 bit	2.7 V	IT CAN ALSO BE CONFIGURED AS 64M X 2 AND 128M X 1		e3			NOR TYPE	.00005 Amp	8 mm			3
MX25L12872FM2I-10G	Macronix	FLASH	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS			16777216 words	3			8	SMALL OUTLINE		4			1.27 mm	85 Cel			16MX8	16M	-40 Cel					DUAL			R-PDSO-G8		3.6 V	2.16 mm		133 MHz	5.23 mm					134217728 bit	2.7 V	ALSO IT CAN BE CONFIGURED AS 64M X 2 AND 128M X 1			NOT SPECIFIED	NOT SPECIFIED			5.28 mm			3
MX25L25645GZ2I-10G	Macronix	FLASH	INDUSTRIAL	8	HVSON	RECTANGULAR	UNSPECIFIED	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS		25 mA	33554432 words	3			8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.3			20	1.27 mm	85 Cel		3-STATE	32MX8	32M	-40 Cel			MATTE TIN		DUAL		HARDWARE/SOFTWARE	R-XDSO-N8	3	3.6 V	.8 mm	100000 Write/Erase Cycles	120 MHz	6 mm			SPI		268435456 bit	2.7 V			e3			NOR TYPE	.00002 Amp	8 mm			3

Flash Memory

Flash memory is a type of non-volatile computer memory that is commonly used in digital devices such as USB drives, solid-state drives, and digital cameras. It is a type of EEPROM (Electrically Erasable Programmable Read-Only Memory) that allows data to be erased and reprogrammed in blocks instead of one byte at a time. Flash memory uses a floating gate transistor to store data, which allows it to retain information even when the power is turned off.

Flash memory is widely used in digital devices because of its high capacity, small size, and fast access times. It is also more durable than other types of memory, such as hard disk drives, because it has no moving parts. This makes it ideal for use in portable devices that may be subject to physical shock or vibration.

There are two types of flash memory: NOR flash and NAND flash. NOR flash is faster than NAND flash, but it has lower density and higher cost per bit. NOR flash is typically used for code storage, such as firmware or boot code, because it provides faster access times. NAND flash has higher density and lower cost per bit, which makes it ideal for data storage applications.

Flash memory has a limited lifespan, as it can only be erased and reprogrammed a limited number of times. This is because the process of erasing and reprogramming the memory causes wear and tear on the floating gate transistor. However, modern flash memory devices have a sophisticated wear-leveling algorithm that distributes writes evenly across the memory, which extends the lifespan of the device.