RECTANGULAR Flash Memory 2,400+

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Screening Level	Terminal Form	Parallel or Serial	Operating Mode	Sector Size (Words)	Maximum Supply Current	No. of Words	Nominal Supply Voltage / Vsup (V)	Toggle Bit	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Alternate Memory Width	Sub-Category	Minimum Data Retention Time	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	No. of Sectors/Size	Command User Interface	Terminal Finish	Ready or Busy	Terminal Position	No. of Ports	Write Protection	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Endurance	Maximum Clock Frequency (fCLK)	Width	Qualification	Maximum Write Cycle Time (tWC)	Serial Bus Type	Boot Block	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	Page Size (words)	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Type	Maximum Standby Current	Length	Common Flash Interface	Maximum Access Time	Programming Voltage (V)	Data Polling
S29GL128P11FFIV22	Infineon Technologies	FLASH	INDUSTRIAL	64	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	128K	110 mA	134217728 words	3	YES	1.8/3.3,3/3.3	1	GRID ARRAY, LOW PROFILE	BGA64,8X8,40	8	Flash Memories		1 mm	85 Cel		128MX1	128M	-40 Cel	128	YES	TIN SILVER COPPER	YES	BOTTOM			R-PBGA-B64	3	3.6 V	1.4 mm			11 mm	Not Qualified				134217728 bit	2.7 V		8/16	e1	40	260	NOR TYPE	.000005 Amp	13 mm	YES	110 ns	3	YES
S29GL256P10TFI020	Infineon Technologies	FLASH	INDUSTRIAL	56	HTSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	128K	110 mA	268435456 words	3	YES	3/3.3	1	SMALL OUTLINE, HEAT SINK/SLUG, THIN PROFILE, SHRINK PITCH	TSSOP56,.8,20	8	Flash Memories		.5 mm	85 Cel		256MX1	256M	-40 Cel	256	YES	MATTE TIN	YES	DUAL			R-PDSO-G56	3	3.6 V	1.2 mm			14 mm	Not Qualified				268435456 bit	2.7 V		8/16	e3	40	260	NOR TYPE	.000005 Amp	18.4 mm	YES	100 ns	3	YES
S34MS01G100BHI000	Cypress Semiconductor	FLASH	INDUSTRIAL	63	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	128K	20 mA	134217728 words	1.8	NO	1.8	8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA63,8X12,32		Flash Memories		.8 mm	85 Cel		128MX8	128M	-40 Cel	1K	YES		YES	BOTTOM			R-PBGA-B63	3	1.95 V	1 mm			9 mm	Not Qualified				1073741824 bit	1.7 V		2K			260	SLC NAND TYPE	.00005 Amp	11 mm		45 ns	1.8	NO
SST25WF080BT-40I/SN	Microchip Technology	FLASH	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100; TS 16949	GULL WING	SERIAL	SYNCHRONOUS		15 mA	8388608 words	1.8			1	SMALL OUTLINE	SOP8,.23			20	1.27 mm	85 Cel	3-STATE	8MX1	8M	-40 Cel			MATTE TIN		DUAL	1	SOFTWARE	R-PDSO-G8		1.95 V	1.75 mm	100000 Write/Erase Cycles	40 MHz	3.9 mm			SPI		8388608 bit	1.65 V			e3			NOR TYPE	.00001 Amp	4.9 mm			1.8
TC58NVG2S3ETAI0	Toshiba	FLASH	INDUSTRIAL	48	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	ASYNCHRONOUS	128K	30 mA	536870912 words	3.3	NO	3/3.3	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP48,.8,20		Flash Memories		.5 mm	85 Cel		512MX8	512M	-40 Cel	4K	YES		YES	DUAL			R-PDSO-G48		3.6 V	1.2 mm				Not Qualified				4294967296 bit	2.7 V		2K		10	260		.00005 Amp	18.4 mm		25 ns	3.3	NO
TE28F128J3D75B	Micron Technology	FLASH	INDUSTRIAL	56	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		GULL WING	PARALLEL		128K	80 mA	8388608 words		NO	3/3.3	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP56,.8,20	8	Flash Memories		.5 mm	85 Cel		8MX16	8M	-40 Cel	128	YES		YES	DUAL			R-PDSO-G56							Not Qualified				134217728 bit			4/8		30	235	NOR TYPE	.00012 Amp		YES	75 ns		NO
TS32GUSDHC10U1	Transcend Information	FLASH CARD	OTHER	8	DIE	RECTANGULAR			1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS			34359738368 words				8	UNCASED CHIP	DIE OR CHIP					85 Cel		32GX8	32G	-25 Cel					SINGLE			R-XUUC-N8									SPI		274877906944 bit							MLC NAND TYPE
TS64GMTS800I	Transcend Information	FLASH MODULE	INDUSTRIAL	75		RECTANGULAR	UNSPECIFIED	NO	1	CMOS		NO LEAD	SERIAL		512		68719476736 words	3.3			8	MICROELECTRONIC ASSEMBLY				1		85 Cel		64GX8	64G	-40 Cel					SINGLE			R-XSMA-N75		3.465 V				22 mm					549755813888 bit	3.135 V						NAND TYPE		80 mm			3.3
CAT28F512H-12	Catalyst Semiconductor	FLASH	COMMERCIAL	32	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS		30 mA	65536 words	5	NO	5	8	SMALL OUTLINE, THIN PROFILE	TSSOP32,.8,20		Flash Memories		.5 mm	70 Cel		64KX8	64K	0 Cel		YES	MATTE TIN		DUAL			R-PDSO-G32	2A	5.5 V	1.2 mm	100000 Write/Erase Cycles		8 mm	Not Qualified				524288 bit	4.5 V			e3			NOR TYPE	.00001 Amp	18.4 mm		120 ns	12	NO
CAT28F512H12	Onsemi	FLASH	COMMERCIAL	32	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS		30 mA	65536 words	5	NO	5	8	SMALL OUTLINE, THIN PROFILE	TSSOP32,.8,20		Flash Memories		.5 mm	70 Cel		64KX8	64K	0 Cel		YES	TIN		DUAL			R-PDSO-G32	2A	5.5 V	1.2 mm	100000 Write/Erase Cycles		8 mm	Not Qualified				524288 bit	4.5 V			e3			NOR TYPE	.00001 Amp	18.4 mm		120 ns	12	NO
CAT28F512HI-90	Catalyst Semiconductor	FLASH	INDUSTRIAL	32	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS		30 mA	65536 words	5	NO	5	8	SMALL OUTLINE, THIN PROFILE	TSSOP32,.8,20		Flash Memories		.5 mm	85 Cel		64KX8	64K	-40 Cel		YES	MATTE TIN		DUAL			R-PDSO-G32	2A	5.5 V	1.2 mm	100000 Write/Erase Cycles		8 mm	Not Qualified				524288 bit	4.5 V			e3			NOR TYPE	.00001 Amp	18.4 mm		90 ns	12	NO
CAT28F512HI90	Onsemi	FLASH	INDUSTRIAL	32	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS		30 mA	65536 words	5	NO	5	8	SMALL OUTLINE, THIN PROFILE	TSSOP32,.8,20		Flash Memories		.5 mm	85 Cel		64KX8	64K	-40 Cel		YES	MATTE TIN		DUAL			R-PDSO-G32	2A	5.5 V	1.2 mm	100000 Write/Erase Cycles		8 mm	Not Qualified				524288 bit	4.5 V			e3			NOR TYPE	.00001 Amp	18.4 mm		90 ns	12	NO
GD25Q16CNIGR	Gigadevice Semiconductor	FLASH		8	HVSON	RECTANGULAR		YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS		20 mA	2097152 words	3.3			8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.12,32			20	.8 mm	85 Cel		2MX8	2M	-40 Cel					DUAL		HARDWARE/SOFTWARE	R-XDSO-N8		3.6 V	.6 mm	100000 Write/Erase Cycles	120 MHz	3 mm			SPI		16777216 bit	2.7 V						NOR TYPE	.000005 Amp	4 mm			3.3
GD25Q80CTIG	Gigadevice Semiconductor	FLASH	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS			8388608 words	3.3			1	SMALL OUTLINE					1.27 mm	85 Cel		8MX1	8M	-40 Cel					DUAL			R-PDSO-G8		3.6 V	1.75 mm		120 MHz	3.9 mm					8388608 bit	2.7 V				NOT SPECIFIED	NOT SPECIFIED			4.9 mm			3.3
IS25LQ040B-JKLE-TR	Integrated Silicon Solution	FLASH	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS			4194304 words	3			1	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE					1.27 mm	105 Cel		4MX1	4M	-40 Cel					DUAL			R-PDSO-N8		3.6 V	.8 mm		104 MHz	5 mm					4194304 bit	2.3 V				NOT SPECIFIED	NOT SPECIFIED			6 mm			3
M25P20-VMN6TPBA	Micron Technology	FLASH	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		15 mA	2097152 words	2.7		3/3.3	8	SMALL OUTLINE	SOP8,.25		Flash Memories	20	1.27 mm	85 Cel		256KX8	256K	-40 Cel					DUAL		HARDWARE/SOFTWARE	R-PDSO-G8		3.6 V	1.75 mm	100000 Write/Erase Cycles	75 MHz	3.9 mm	Not Qualified		SPI		2097152 bit	2.3 V				NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.000005 Amp	4.9 mm			2.7
M29W400FB55N3E	Micron Technology	FLASH	AUTOMOTIVE	48	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	20 mA	262144 words	3.3	YES	3.3	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP48,.8,20	8	Flash Memories		.5 mm	125 Cel		256KX16	256K	-40 Cel	1,2,1,7	YES	Matte Tin (Sn)	YES	DUAL			R-PDSO-G48		3.6 V	1.2 mm			12 mm	Not Qualified			BOTTOM	4194304 bit	3 V	BOTTOM BOOT BLOCK		e3	30	260	NOR TYPE	.0001 Amp	18.4 mm	YES	55 ns	3	YES
MT25QU128ABA1EW9-0SITTR	Micron Technology	FLASH	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS		35 mA	16777216 words	1.8			8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.3			20	1.27 mm	85 Cel	3-STATE	16MX8	16M	-40 Cel					DUAL		HARDWARE	R-PDSO-N8		2 V	.8 mm	100000 Write/Erase Cycles	166 MHz	6 mm			SPI		134217728 bit	1.7 V				30	260	NOR TYPE	.00003 Amp	8 mm			1.8
MT29F4G08ABBDAH4:D	Micron Technology	FLASH	COMMERCIAL	63	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	128K	20 mA	536870912 words	1.8	NO	1.8	8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA63,10X12,32		Flash Memories		.8 mm	70 Cel		512MX8	512M	0 Cel	4K	YES		YES	BOTTOM			R-PBGA-B63		1.95 V	1 mm			9 mm	Not Qualified				4294967296 bit	1.7 V		2K		30	260	SLC NAND TYPE	.00005 Amp	11 mm		25 ns		NO
MX25L25645GM2I-10G	Macronix	FLASH	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		25 mA	33554432 words	3			8	SMALL OUTLINE	SOP8,.3			20	1.27 mm	85 Cel	3-STATE	32MX8	32M	-40 Cel			MATTE TIN		DUAL		HARDWARE/SOFTWARE	R-PDSO-G8	3	3.6 V	2.16 mm	100000 Write/Erase Cycles	120 MHz	5.23 mm			SPI		268435456 bit	2.7 V			e3			NOR TYPE	.00002 Amp	5.28 mm			3
MX29LV040CQI-70G	Macronix	FLASH	INDUSTRIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	64K	30 mA	524288 words	3	YES	3/3.3	8	CHIP CARRIER	LDCC32,.5X.6		Flash Memories		1.27 mm	85 Cel		512KX8	512K	-40 Cel	8	YES	Tin (Sn)		QUAD			R-PQCC-J32	3	3.6 V	3.55 mm			11.43 mm	Not Qualified				4194304 bit	2.7 V			e3	40	260	NOR TYPE	.000005 Amp	14.05 mm	YES	70 ns	3	YES
S25FL128SAGBHI310	Infineon Technologies	FLASH	INDUSTRIAL	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS		100 mA	33554432 words	3		3/3.3	4	GRID ARRAY, THIN PROFILE	BGA24,4X6,40	2	Flash Memories	20	1 mm	85 Cel		32MX4	32M	-40 Cel					BOTTOM		HARDWARE/SOFTWARE	R-PBGA-B24	3	3.6 V	1.2 mm	100000 Write/Erase Cycles	133 MHz	6 mm	Not Qualified	500 ms	SPI	BOTTOM	134217728 bit	2.7 V	ALSO CONFIGURABLE AS 128M X 1					NOR TYPE	.0001 Amp	8 mm			3
S25FL512SAGBHID10	Infineon Technologies	FLASH	INDUSTRIAL	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS		100 mA	64094208 words	3		3/3.3	8	GRID ARRAY, THIN PROFILE	BGA24,4X6,40	4	Flash Memories	20	1 mm	85 Cel	3-STATE	64MX8	64M	-40 Cel					BOTTOM		HARDWARE/SOFTWARE	R-PBGA-B24	3	3.6 V	1.2 mm	100000 Write/Erase Cycles	133 MHz	6 mm	Not Qualified		SPI		512753664 bit	2.7 V						NOR TYPE	.0003 Amp	8 mm			3
S25FS128SAGBHI300	Infineon Technologies	FLASH	INDUSTRIAL	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS		100 mA	16777216 words	1.8			8	GRID ARRAY, THIN PROFILE	BGA24,4X6,40			2	1 mm	85 Cel	3-STATE	16MX8	16M	-40 Cel					DUAL		HARDWARE/SOFTWARE	R-PBGA-B24	3	2 V	1.2 mm	100000 Write/Erase Cycles	133 MHz	6 mm			SPI		134217728 bit	1.7 V						NOR TYPE	.0003 Amp	8 mm			1.8
SDINBDG4-16G-I	Western Digital	FLASH CARD		153	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS			17179869184 words	3.3			8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA153,14X14,20			1	.5 mm	85 Cel		16GX8	16G	-25 Cel					BOTTOM			R-PBGA-B153		3.6 V	.8 mm	3000 Write/Erase Cycles	200 MHz	11.5 mm					137438953472 bit	2.7 V						MLC NAND TYPE		13 mm			3.3
SST26VF016B-80E/SN70SVAO	Microchip Technology	FLASH	AUTOMOTIVE	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100; TS 16949	GULL WING	SERIAL	SYNCHRONOUS		25 mA	16777216 words	3			1	SMALL OUTLINE	SOP8,.23			100	1.27 mm	125 Cel	3-STATE	16MX1	16M	-40 Cel					DUAL	1	HARDWARE/SOFTWARE	R-PDSO-G8		3.6 V	1.75 mm	100000 Write/Erase Cycles	104 MHz	3.9 mm			SPI		16777216 bit	2.7 V						NOR TYPE	.000045 Amp	4.9 mm			3
TE28F128J3D75D	Numonyx	FLASH	INDUSTRIAL	56	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS			8388608 words	3			16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH		8			.5 mm	85 Cel		8MX16	8M	-40 Cel					DUAL			R-PDSO-G56		3.6 V	1.2 mm			14 mm	Not Qualified				134217728 bit	2.7 V				NOT SPECIFIED	NOT SPECIFIED	NOR TYPE		18.4 mm		75 ns	2.7
TE28F128J3D75E	Numonyx	FLASH	INDUSTRIAL	56	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS			8388608 words	3			16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH		8			.5 mm	85 Cel		8MX16	8M	-40 Cel					DUAL			R-PDSO-G56		3.6 V	1.2 mm			14 mm	Not Qualified				134217728 bit	2.7 V				NOT SPECIFIED	NOT SPECIFIED	NOR TYPE		18.4 mm		75 ns	2.7
W25Q32JVSFIQ	Winbond Electronics	FLASH	INDUSTRIAL	16	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS			4194304 words	3.3			8	SMALL OUTLINE		1			1.27 mm	85 Cel		4MX8	4M	-40 Cel			MATTE TIN		DUAL			R-PDSO-G16		3.6 V	2.64 mm		133 MHz	7.49 mm					33554432 bit	3 V	2.7V NOMINAL AVAILABLE WITH 104MHZ		e3		260			10.31 mm			3
A29040B-70F	Amic Technology	FLASH	COMMERCIAL	32	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	64K	40 mA	524288 words	5	YES	5	8	IN-LINE	DIP32,.6		Flash Memories		2.54 mm	70 Cel		512KX8	512K	0 Cel	8	YES			DUAL			R-PDIP-T32		5.5 V	5.334 mm	100000 Write/Erase Cycles		15.24 mm	Not Qualified				4194304 bit	4.5 V				NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.000005 Amp	41.91 mm		70 ns	5	YES
IS22TF32G-JCLA2	Integrated Silicon Solution	FLASH		153	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	SERIAL	SYNCHRONOUS		55 mA	34359738368 words	3.3			8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA153,14X14,20				.5 mm	105 Cel	3-STATE	32GX8	32G	-40 Cel					BOTTOM		HARDWARE/SOFTWARE	R-PBGA-B153		3.6 V	1 mm		200 MHz	11.5 mm					274877906944 bit	2.7 V				NOT SPECIFIED	NOT SPECIFIED	TLC NAND TYPE	.00003 Amp	13 mm			3.3
IS25LP256D-JMLE	Integrated Silicon Solution	FLASH	INDUSTRIAL	16	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		30 mA	33554432 words	3			8	SMALL OUTLINE	SOP16,.4			20	1.27 mm	105 Cel	3-STATE	32MX8	32M	-40 Cel					DUAL		HARDWARE/SOFTWARE	R-PDSO-G16		3.6 V	2.65 mm	100000 Write/Erase Cycles	133 MHz	7.49 mm			SPI		268435456 bit	2.3 V				NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.00003 Amp	10.31 mm			3
IS25LQ040B-JKLE	Integrated Silicon Solution	FLASH	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS			4194304 words	3			1	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE					1.27 mm	105 Cel		4MX1	4M	-40 Cel					DUAL			R-PDSO-N8		3.6 V	.8 mm		104 MHz	5 mm					4194304 bit	2.3 V								6 mm			3
IS29GL128-70SLA3T	Integrated Silicon Solution	FLASH	AUTOMOTIVE	56	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	PARALLEL	ASYNCHRONOUS			134217728 words	3			1	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH					.5 mm	125 Cel		128MX1	128M	-40 Cel			TIN		DUAL			R-PDSO-G56		3.6 V	1.2 mm			14 mm					134217728 bit	2.7 V			e3					18.4 mm		70 ns	3
JS28F512M29EWLA	Micron Technology	FLASH	INDUSTRIAL	56	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	128K	31 mA	33554432 words	3	YES	3/3.3	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP56,.8,20	8	Flash Memories		.5 mm	85 Cel		32MX16	32M	-40 Cel	512	YES	NICKEL PALLADIUM GOLD	YES	DUAL			R-PDSO-G56		3.6 V	1.2 mm			14 mm	Not Qualified				536870912 bit	2.7 V		16/32	e4			NOR TYPE	.000225 Amp	18.4 mm	YES	110 ns	3	YES
K8P6415UQB-PI4B	Samsung	FLASH	INDUSTRIAL	48	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		GULL WING	PARALLEL		4K,32K	55 mA	4194304 words		YES	3/3.3	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP48,.8,20		Flash Memories		.5 mm	85 Cel		4MX16	4M	-40 Cel	16,126	YES	TIN BISMUTH	YES	DUAL			R-PDSO-G48	3						Not Qualified			BOTTOM/TOP	67108864 bit			8	e6		260	NOR TYPE	.00003 Amp		YES	60 ns		YES
M25P10-AVMN6PYA	Micron Technology	FLASH	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS			131072 words	3			8	SMALL OUTLINE						85 Cel		128KX8	128K	-40 Cel					DUAL			R-PDSO-G8		3.6 V			50 MHz						1048576 bit	2.3 V				30	260	NOR TYPE					2.7
MT29F16G08ABABAWP:B	Micron Technology	FLASH	COMMERCIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	512K	50 mA	2147483648 words	3.3	NO	3/3.3	8	SMALL OUTLINE, THIN PROFILE	TSSOP48,.8,20		Flash Memories		.5 mm	70 Cel		2GX8	2G	0 Cel	4K	YES	MATTE TIN	YES	DUAL			R-PDSO-G48		3.6 V	1.2 mm			12 mm	Not Qualified				17179869184 bit	2.7 V		4K	e3			SLC NAND TYPE	.00005 Amp	18.4 mm		20 ns	2.7	NO
MT29F32G08CBABAWP:B	Micron Technology	FLASH	COMMERCIAL	48	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		GULL WING	PARALLEL		1M	50 mA	4294967296 words		NO	3/3.3	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP48,.8,20		Flash Memories		.5 mm	70 Cel		4GX8	4G	0 Cel	4K	YES		YES	DUAL			R-PDSO-G48							Not Qualified				34359738368 bit			4K				MLC NAND TYPE	.00005 Amp			20 ns		NO
MT35XU512ABA1G12-0AATTR	Micron Technology	FLASH		24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	SERIAL	SYNCHRONOUS			67108864 words	1.8			8	GRID ARRAY, THIN PROFILE	BGA24,5X5,40			20	1 mm	105 Cel		64MX8	64M	-40 Cel			TIN SILVER COPPER		BOTTOM		HARDWARE	R-PBGA-B24		2 V	1.2 mm	100000 Write/Erase Cycles	200 MHz	6 mm			SPI		536870912 bit	1.7 V			e1	30	260	NOR TYPE		8 mm			1.8
MTFC8GAMALGT-AAT	Micron Technology	FLASH CARD	INDUSTRIAL	153	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	PARALLEL	SYNCHRONOUS			8589934592 words				8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA153,14X14,20			5	.5 mm	105 Cel		8GX8	8G	-40 Cel					BOTTOM			R-PBGA-B153		3.6 V	.8 mm		200 MHz	11.5 mm					68719476736 bit	2.7 V						NAND TYPE		13 mm
MTSD032AHC6MS-1WT	Micron Technology	FLASH CARD			DIE	RECTANGULAR	UNSPECIFIED	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS			34359738368 words				8	UNCASED CHIP						85 Cel		32GX8	32G	-25 Cel					UPPER			R-XUUC-N											274877906944 bit							NOR TYPE
MX25L51245GXDI-10G	Macronix	FLASH	INDUSTRIAL	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS			134217728 words	3			4	GRID ARRAY, THIN PROFILE		2			1 mm	85 Cel		128MX4	128M	-40 Cel					BOTTOM			R-PBGA-B24		3.6 V	1.2 mm		104 MHz	6 mm					536870912 bit	2.7 V	CAN BE ORGNISED AS 512 MBIT X 1			NOT SPECIFIED	NOT SPECIFIED			8 mm			2.7
N25Q128A13EF740F	Micron Technology	FLASH	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS		20 mA	16777216 words	3		3/3.3	8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.25		Flash Memories	20	1.27 mm	85 Cel		16MX8	16M	-40 Cel					DUAL		HARDWARE/SOFTWARE	R-PDSO-N8		3.6 V	1 mm	100000 Write/Erase Cycles	108 MHz	5 mm	Not Qualified		SPI		134217728 bit	2.7 V				30	260	NOR TYPE	.0001 Amp	6 mm			3
PC28F128G18FE	Micron Technology	FLASH	OTHER	64	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS	128K	50 mA	8388608 words	1.8	NO	1.8	16	GRID ARRAY, THIN PROFILE	BGA64,8X8,40		Flash Memories		1 mm	85 Cel		8MX16	8M	-30 Cel	64	YES	TIN SILVER COPPER		BOTTOM			R-PBGA-B64		2 V	1.2 mm			8 mm	Not Qualified				134217728 bit	1.7 V			e1			NOR TYPE	.000115 Amp	10 mm	YES	96 ns	2.7	NO
PC28F320J3F75A	Micron Technology	FLASH	INDUSTRIAL	64	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	128K	80 mA	2097152 words	3	NO	3/3.3	16	GRID ARRAY, THIN PROFILE	BGA64,8X8,40	8	Flash Memories		1 mm	85 Cel		2MX16	2M	-40 Cel	32	YES	Tin/Silver/Copper (Sn95.5Ag4.0Cu0.5)	YES	BOTTOM			R-PBGA-B64		3.6 V	1.2 mm			10 mm	Not Qualified				33554432 bit	2.7 V		4/8	e1	30	260	NOR TYPE	.00012 Amp	13 mm	YES	75 ns	2.7	NO
S25FL256LAGMFI003	Infineon Technologies	FLASH	INDUSTRIAL	16	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		50 mA	33554432 words	3			8	SMALL OUTLINE	SOP16,.4			20	1.27 mm	85 Cel	3-STATE	32MX8	32M	-40 Cel			MATTE TIN		DUAL		HARDWARE/SOFTWARE	R-PDSO-G16	3	3.6 V	2.65 mm	100000 Write/Erase Cycles	133 MHz	7.5 mm			SPI		268435456 bit	2.7 V			e3			NOR TYPE	.00006 Amp	10.3 mm			3
S25FL512SAGBHI313	Infineon Technologies	FLASH	INDUSTRIAL	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS		100 mA	64094208 words	3		3/3.3	8	GRID ARRAY, THIN PROFILE	BGA24,4X6,40	4	Flash Memories	20	1 mm	85 Cel	3-STATE	64MX8	64M	-40 Cel					BOTTOM		HARDWARE/SOFTWARE	R-PBGA-B24	3	3.6 V	1.2 mm	100000 Write/Erase Cycles	133 MHz	6 mm	Not Qualified		SPI		512753664 bit	2.7 V						NOR TYPE	.0003 Amp	8 mm			3

Flash Memory

Flash memory is a type of non-volatile computer memory that is commonly used in digital devices such as USB drives, solid-state drives, and digital cameras. It is a type of EEPROM (Electrically Erasable Programmable Read-Only Memory) that allows data to be erased and reprogrammed in blocks instead of one byte at a time. Flash memory uses a floating gate transistor to store data, which allows it to retain information even when the power is turned off.

Flash memory is widely used in digital devices because of its high capacity, small size, and fast access times. It is also more durable than other types of memory, such as hard disk drives, because it has no moving parts. This makes it ideal for use in portable devices that may be subject to physical shock or vibration.

There are two types of flash memory: NOR flash and NAND flash. NOR flash is faster than NAND flash, but it has lower density and higher cost per bit. NOR flash is typically used for code storage, such as firmware or boot code, because it provides faster access times. NAND flash has higher density and lower cost per bit, which makes it ideal for data storage applications.

Flash memory has a limited lifespan, as it can only be erased and reprogrammed a limited number of times. This is because the process of erasing and reprogramming the memory causes wear and tear on the floating gate transistor. However, modern flash memory devices have a sophisticated wear-leveling algorithm that distributes writes evenly across the memory, which extends the lifespan of the device.