RECTANGULAR Flash Memory 2,400+

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Screening Level	Terminal Form	Parallel or Serial	Operating Mode	Sector Size (Words)	Maximum Supply Current	No. of Words	Nominal Supply Voltage / Vsup (V)	Toggle Bit	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Alternate Memory Width	Sub-Category	Minimum Data Retention Time	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	No. of Sectors/Size	Command User Interface	Terminal Finish	Ready or Busy	Terminal Position	No. of Ports	Write Protection	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Endurance	Maximum Clock Frequency (fCLK)	Width	Qualification	Maximum Write Cycle Time (tWC)	Serial Bus Type	Boot Block	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	Page Size (words)	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Type	Maximum Standby Current	Length	Common Flash Interface	Maximum Access Time	Programming Voltage (V)	Data Polling
S29GL128P11FFI020	Infineon Technologies	FLASH	INDUSTRIAL	64	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	128K	110 mA	134217728 words	3	YES	3/3.3	1	GRID ARRAY, LOW PROFILE	BGA64,8X8,40	8	Flash Memories		1 mm	85 Cel		128MX1	128M	-40 Cel	128	YES	TIN SILVER COPPER	YES	BOTTOM			R-PBGA-B64	3	3.6 V	1.4 mm			11 mm	Not Qualified				134217728 bit	2.7 V		8/16	e1	40	260	NOR TYPE	.000005 Amp	13 mm	YES	110 ns	3	YES
SDCS2/512GB	Kingston Technology Company	FLASH CARD	OTHER		DIE	RECTANGULAR	UNSPECIFIED	YES	1	CMOS		NO LEAD					549755813888 words	3.3			8	UNCASED CHIP						85 Cel		512GX8	512G	-25 Cel					UPPER			R-XUUC-N			1 mm			11 mm					4398046511104 bit							NOR TYPE		15 mm			3.3
SST39SF040-55-4C-NHE-T	Microchip Technology	FLASH	COMMERCIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	4K	35 mA	524288 words	5	YES	5	8	CHIP CARRIER	LDCC32,.5X.6		Flash Memories	100	1.27 mm	70 Cel	3-STATE	512KX8	512K	0 Cel	128	YES			QUAD	1		R-PQCC-J32		5.5 V	3.556 mm	100000 Write/Erase Cycles		11.43 mm	Not Qualified				4194304 bit	4.5 V						NOR TYPE	.0001 Amp	13.97 mm		55 ns	5	YES
TE28F128J3D-75	Intel	FLASH	INDUSTRIAL	56	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	128K	80 mA	8388608 words	3	NO	3/3.3	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP56,.8,20	8	Flash Memories		.5 mm	85 Cel		8MX16	8M	-40 Cel	128	YES	TIN LEAD	YES	DUAL			R-PDSO-G56		3.6 V	1.2 mm			14 mm	Not Qualified				134217728 bit	2.7 V		4/8	e0			NOR TYPE	.00012 Amp	18.4 mm	YES	75 ns	2.7	NO
THGBMJG8C2LBAIL	Kioxia Holdings	FLASH CARD	OTHER	153	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL					34359738368 words				8	GRID ARRAY	BGA153,14X14,20				.5 mm	85 Cel		32GX8	32G	-25 Cel					BOTTOM			R-PBGA-B153		3.6 V				11 mm					274877906944 bit	2.7 V								13 mm
TS8GUSDHC10U1	Transcend Information	FLASH CARD	OTHER	8	DIE	RECTANGULAR			1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS			8589934592 words				8	UNCASED CHIP	DIE OR CHIP					85 Cel		8GX8	8G	-25 Cel					SINGLE			R-XUUC-N8									SPI		68719476736 bit							MLC NAND TYPE
W25Q32JWZPIQ	Winbond Electronics	FLASH	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS			4194304 words	1.8			8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE		1			1.27 mm	85 Cel		4MX8	4M	-40 Cel					DUAL			R-PDSO-N8		1.95 V	.8 mm		133 MHz	5 mm					33554432 bit	1.7 V				NOT SPECIFIED	NOT SPECIFIED			6 mm			1.8
AM29LV800BT-90EI	Spansion	FLASH	INDUSTRIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	30 mA	524288 words	3	YES	3/3.3	16	SMALL OUTLINE, THIN PROFILE	TSSOP48,.8,20	8	Flash Memories		.5 mm	85 Cel		512KX16	512K	-40 Cel	1,2,1,15	YES	TIN LEAD	YES	DUAL			R-PDSO-G48	3	3.6 V	1.2 mm	1000000 Write/Erase Cycles		12 mm	Not Qualified			TOP	8388608 bit	2.7 V	CAN BE OPERATED FROM 3 TO 3.6 VOLTS REGULATED; TOP BOOT BLOCK		e0		260	NOR TYPE	.000005 Amp	18.4 mm		90 ns	3	YES
AT25SF161B-SHB-T	Renesas Electronics	FLASH	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		20 mA	2097152 words	3			8	SMALL OUTLINE	SOP8,.3			20	1.27 mm	85 Cel	3-STATE	2MX8	2M	-40 Cel					DUAL		HARDWARE/SOFTWARE	R-PDSO-G8	1	3.6 V	2.16 mm	100000 Write/Erase Cycles	108 MHz	5.24 mm			SPI		16777216 bit	2.7 V						NOR TYPE	.00003 Amp	5.29 mm			3
AT45DB081D-SSU-SL955	Atmel	FLASH	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		17 mA	8388608 words	3		3/3.3	1	SMALL OUTLINE	SOP8,.25		Flash Memories	20	1.27 mm	85 Cel		8MX1	8M	-40 Cel			Matte Tin (Sn)		DUAL		HARDWARE/SOFTWARE	R-PDSO-G8		3.6 V	1.75 mm	100000 Write/Erase Cycles	66 MHz	3.9 mm	Not Qualified		SPI		8388608 bit	2.7 V	ORGANIZED AS 4096 PAGES OF 256 BYTES EACH		e3			NOR TYPE	.00001 Amp	4.925 mm			2.7
AT45DB081E-MHN-T	Renesas Electronics	FLASH	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS		16 mA	1048576 words	3		1.8/3.3	8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.25		Flash Memories	20	1.27 mm	85 Cel	3-STATE	1MX8	1M	-40 Cel			NICKEL PALLADIUM GOLD		QUAD		HARDWARE/SOFTWARE	R-PDSO-N8	1	3.6 V	.6 mm	100000 Write/Erase Cycles	133 MHz	5 mm	Not Qualified		SPI		8388608 bit	2.3 V	IT ALSO OPERATES WITH 1.7V MIN WITH 85 MHZ FREQUENCY;256K-BIT EXTRA FLASH AVAILABLE		e4			NOR TYPE	.00004 Amp	6 mm			3
GLS85LS1002P-S-I-FZJE-TT095	Greenliant Systems	FLASH	INDUSTRIAL	145	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	ASYNCHRONOUS			2147483648 words	3.3			8	GRID ARRAY					1 mm	85 Cel		2GX8	2G	-40 Cel					BOTTOM			R-PBGA-B145			1.95 mm			14 mm					17179869184 bit					NOT SPECIFIED	NOT SPECIFIED	SLC NAND TYPE		24 mm			3.3
GLS85LS1064B-M-I-FZJE-ND105	Greenliant Systems	FLASH	INDUSTRIAL	145	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	ASYNCHRONOUS			68719476736 words	3.3			8	GRID ARRAY					1 mm	85 Cel		64GX8	64G	-40 Cel					BOTTOM			R-PBGA-B145			1.95 mm			14 mm					549755813888 bit					NOT SPECIFIED	NOT SPECIFIED	MLC NAND TYPE		24 mm			3.3
MT29F128G08AKCABH2-10ITZ:A	Micron Technology	FLASH	INDUSTRIAL	100	BGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		BALL	PARALLEL		1M	50 mA	17179869184 words		NO	1.8,3/3.3	8	GRID ARRAY	BGA100,10X17,40		Flash Memories		1 mm	85 Cel		16GX8	16G	-40 Cel	16K	YES		YES	BOTTOM			R-PBGA-B100							Not Qualified				137438953472 bit			8K				SLC NAND TYPE	.00001 Amp			20 ns		NO
MT29F8G01ADBFD12-AAT:F	Micron Technology	FLASH		24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	SERIAL	SYNCHRONOUS		35 mA	1073741824 words	1.8			8	GRID ARRAY, THIN PROFILE	BGA24,5X5,40	2		10	1 mm	105 Cel	3-STATE	1GX8	1G	-40 Cel					BOTTOM		HARDWARE/SOFTWARE	R-PBGA-B24		1.95 V	1.2 mm	100000 Write/Erase Cycles	83 MHz	6 mm			SPI		8589934592 bit	1.7 V	CONFIGURABLE AS 8G X 1					SLC NAND TYPE	.00005 Amp	8 mm			1.8
MTFC64GAPALNA-AAT	Micron Technology	FLASH CARD	INDUSTRIAL	100	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS			68719476736 words				8	GRID ARRAY, THIN PROFILE					1 mm	105 Cel		64GX8	64G	-40 Cel			TIN SILVER COPPER		BOTTOM			R-PBGA-B100		3.6 V	1.2 mm			14 mm					549755813888 bit	2.7 V			e1	30	260			18 mm			2.7
MX25U12832FZNI02	Macronix	FLASH		8	HVSON	RECTANGULAR	UNSPECIFIED	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS		25 mA	16777216 words	1.8			8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.25			20	1.27 mm	85 Cel	3-STATE	16MX8	16M	-40 Cel					DUAL		HARDWARE/SOFTWARE	R-XDSO-N8		2 V	.8 mm	100000 Write/Erase Cycles	133 MHz	5 mm			SPI		134217728 bit	1.65 V						NOR TYPE	.000005 Amp	6 mm			1.8
MX66L1G45GXDI-10G	Macronix	FLASH	INDUSTRIAL	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS			268435456 words	3			4	GRID ARRAY, THIN PROFILE		2			1 mm	85 Cel		256MX4	256M	-40 Cel			TIN SILVER COPPER		BOTTOM			R-PBGA-B24		3.6 V	1.2 mm		104 MHz	6 mm					1073741824 bit	2.7 V	ALSO IT CAN BE CONFIGURED AS 1G X 1 BIT		e1					8 mm			2.7
MX66U2G45GXRI00	Macronix	FLASH	INDUSTRIAL	24	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS			268435456 words	1.8			8	GRID ARRAY, LOW PROFILE		4			1 mm	85 Cel		256MX8	256M	-40 Cel					BOTTOM			R-PBGA-B24		2 V	1.3 mm		133 MHz	8 mm					2147483648 bit	1.65 V	IT CAN ALSO CONFIGURED AS 1G X 2 AND 2G X 1							6 mm			1.8
S29GL064S70TFI060	Infineon Technologies	FLASH	INDUSTRIAL	48	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS			8388608 words	3			8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH					.5 mm	85 Cel		8MX8	8M	-40 Cel			MATTE TIN		DUAL			R-PDSO-G48	3	3.6 V	1.2 mm			14 mm					67108864 bit	2.7 V			e3					18.4 mm		70 ns	3
S70FS01GSDSBHI210	Infineon Technologies	FLASH	INDUSTRIAL	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS			268435456 words	1.8			4	GRID ARRAY, THIN PROFILE		2			1 mm	85 Cel		256MX4	256M	-40 Cel					BOTTOM			R-PBGA-B24	3	2 V	1.2 mm		80 MHz	6 mm					1073741824 bit	1.7 V	IT ALSO HAVE MEMORY WIDTH X1							8 mm			1.8
SST26VF016BT-104V/SN	Microchip Technology	FLASH	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	SERIAL	SYNCHRONOUS		25 mA	16777216 words	3			1	SMALL OUTLINE	SOP8,.23			100	1.27 mm	105 Cel	3-STATE	16MX1	16M	-40 Cel			MATTE TIN		DUAL	1	HARDWARE/SOFTWARE	R-PDSO-G8	3	3.6 V	1.75 mm	100000 Write/Erase Cycles	104 MHz	3.9 mm			SPI		16777216 bit	2.7 V			e3	40	260	NOR TYPE	.000025 Amp	4.9 mm			3
SST26VF064BT-104V/SM	Microchip Technology	FLASH	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	SERIAL	SYNCHRONOUS		25 mA	67108864 words	3			1	SMALL OUTLINE	SOP8,.3			100	1.27 mm	105 Cel	3-STATE	64MX1	64M	-40 Cel			MATTE TIN		DUAL	1	HARDWARE/SOFTWARE	R-PDSO-G8	3	3.6 V	2.03 mm	100000 Write/Erase Cycles	104 MHz	5.25 mm			SPI		67108864 bit	2.7 V			e3	40	260	NOR TYPE	.000045 Amp	5.26 mm			3
SST26WF016BA-104I/SN	Microchip Technology	FLASH	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	TS 16949	GULL WING	SERIAL	SYNCHRONOUS		25 mA	16777216 words	1.8			1	SMALL OUTLINE	SOP8,.23			100	1.27 mm	85 Cel	3-STATE	16MX1	16M	-40 Cel			MATTE TIN		DUAL	1	HARDWARE/SOFTWARE	R-PDSO-G8	3	1.95 V	1.75 mm	100000 Write/Erase Cycles	104 MHz	3.9 mm			SPI		16777216 bit	1.65 V			e3	40	260	NOR TYPE	.000005 Amp	4.9 mm			1.8
W25Q01JVZEIQ	Winbond Electronics	FLASH	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS			134217728 words	3			8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE		2			1.27 mm	85 Cel		128MX8	128M	-40 Cel					DUAL			R-PDSO-N8		3.6 V	.8 mm		133 MHz	6 mm					1073741824 bit	2.7 V				NOT SPECIFIED	NOT SPECIFIED			8 mm			3
XTSD04GLGEAG	Xtx Technology	FLASH		8	SON	RECTANGULAR	UNSPECIFIED	YES	1	CMOS		NO LEAD	SERIAL	ASYNCHRONOUS			4294967296 words				1	SMALL OUTLINE								4GX1	4G						DUAL			R-XDSO-N8		3.6 V									4294967296 bit	2.7 V											2.7
AM29LV002BT-90EC	Spansion	FLASH	COMMERCIAL	40	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	30 mA	262144 words	3	YES	3/3.3	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP40,.8,20		Flash Memories	20	.5 mm	70 Cel		256KX8	256K	0 Cel	1,2,1,3	YES	TIN LEAD	YES	DUAL			R-PDSO-G40	3	3.6 V	1.2 mm			10 mm	Not Qualified			TOP	2097152 bit	2.7 V	MIN 1000K WRITE CYCLES; 20 YEAR DATA RETENTION; TOP BOOT BLOCK		e0		260	NOR TYPE	.000005 Amp	18.4 mm		90 ns	3	YES
AM29LV040B-90JD	Spansion	FLASH	COMMERCIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	64K	30 mA	524288 words	3	YES	3/3.3	8	CHIP CARRIER	LDCC32,.5X.6		Flash Memories		1.27 mm	70 Cel		512KX8	512K	0 Cel	8	YES	MATTE TIN		QUAD			R-PQCC-J32	3	3.6 V	3.556 mm	1000000 Write/Erase Cycles		11.43 mm	Not Qualified				4194304 bit	2.7 V			e3	40	260	NOR TYPE	.000005 Amp	13.97 mm		90 ns	3	YES
EM04APYD3-BA000-2	Delkin Devices	FLASH CARD	INDUSTRIAL	153	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS			4294967296 words	3.3			8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH					.5 mm	85 Cel		4GX8	4G	-40 Cel					BOTTOM			R-PBGA-B153		3.6 V	1 mm			11.5 mm					34359738368 bit	2.7 V				NOT SPECIFIED	NOT SPECIFIED			13 mm			3.3
IS25LP256D-RMLE	Integrated Silicon Solution	FLASH	INDUSTRIAL	16	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		30 mA	33554432 words	3			8	SMALL OUTLINE	SOP16,.4			20	1.27 mm	105 Cel	3-STATE	32MX8	32M	-40 Cel					DUAL		HARDWARE/SOFTWARE	R-PDSO-G16		3.6 V	2.65 mm	100000 Write/Erase Cycles	133 MHz	7.49 mm			SPI		268435456 bit	2.3 V				NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.00003 Amp	10.31 mm			3
IS25WP512M-JLLE-TR	Integrated Silicon Solution	FLASH	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS			67108864 words	1.8			8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE		1			1.27 mm	105 Cel		64MX8	64M	-40 Cel					DUAL			R-PDSO-N8		1.95 V	.8 mm		133 MHz	6 mm					536870912 bit	1.65 V				NOT SPECIFIED	NOT SPECIFIED			8 mm			1.8
IS34ML04G084-TLI	Integrated Silicon Solution	FLASH	INDUSTRIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	SYNCHRONOUS			536870912 words	3.3			8	SMALL OUTLINE, THIN PROFILE					.5 mm	85 Cel		512MX8	512M	-40 Cel			TIN		DUAL			R-PDSO-G48		3.6 V	1.2 mm			12 mm					4294967296 bit	2.7 V			e3			SLC NAND TYPE		18.4 mm			3.3
M25P64-VMF6TPBA	Micron Technology	FLASH	INDUSTRIAL	16	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	SYNCHRONOUS		20 mA	8388608 words			3/3.3	8	SMALL OUTLINE	SOP16,.4		Flash Memories	20	1.27 mm	85 Cel		8MX8	8M	-40 Cel					DUAL		HARDWARE/SOFTWARE	R-PDSO-G16		3.6 V	2.65 mm	100000 Write/Erase Cycles	75 MHz	7.5 mm	Not Qualified		SPI		67108864 bit	2.7 V				30	260	NOR TYPE	.0001 Amp	10.3 mm			2.7
M25P80-VMW6G	STMicroelectronics	FLASH	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		15 mA	1048576 words	3		3/3.3	8	SMALL OUTLINE	SOP8,.3		Flash Memories	20	1.27 mm	85 Cel		1MX8	1M	-40 Cel			MATTE TIN		DUAL		HARDWARE/SOFTWARE	R-PDSO-G8	1	3.6 V	2.5 mm	100000 Write/Erase Cycles	75 MHz	5.62 mm	Not Qualified	15 ms	SPI		8388608 bit	2.7 V			e3			NOR TYPE	.00001 Amp	5.3 mm			2.7
MT29F16G08ABCCBH1-AAT:C	Micron Technology	FLASH		100	VBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	PARALLEL	ASYNCHRONOUS/SYNCHRONOUS	512K	50 mA	2147483648 words	3.3	NO		8	GRID ARRAY, VERY THIN PROFILE	BGA100,10X17,40			10	1 mm	105 Cel	3-STATE	2GX8	2G	-40 Cel	4K	YES		YES	BOTTOM			R-PBGA-B100		3.6 V	1 mm	80000 Write/Erase Cycles		12 mm					17179869184 bit	2.7 V		4K				SLC NAND TYPE	.00005 Amp	18 mm		20 ns	3.3	NO
MT29F1G01ABBFDWB-IT:FTR	Micron Technology	FLASH		8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS		35 mA	134217728 words	1.8			8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.3			10	1.27 mm	85 Cel	3-STATE	128MX8	128M	-40 Cel					DUAL		HARDWARE/SOFTWARE	R-XDSO-N8		1.95 V	.65 mm	100000 Write/Erase Cycles	83 MHz	6 mm			SPI		1073741824 bit	1.7 V						SLC NAND TYPE	.00005 Amp	8 mm			1.8
MTFC2GMXEA-WT	Micron Technology	Embedded MMC		153	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL		SYNCHRONOUS		70 mA	2147483648 words	1.8			8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA153,14X14,20				.5 mm	85 Cel	OPEN-DRAIN	2GX8	2G	-25 Cel					BOTTOM		HARDWARE	R-PBGA-B153		1.95 V	.8 mm		52 MHz	11.5 mm					17179869184 bit	1.65 V						NAND TYPE		13 mm			1.8
MTFC4GLGDQ-AITA	Micron Technology	FLASH CARD	INDUSTRIAL	100	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS			4294967296 words				8	GRID ARRAY, LOW PROFILE					1 mm	85 Cel		4GX8	4G	-40 Cel			TIN SILVER COPPER		BOTTOM			R-PBGA-B100		3.6 V	1.4 mm			14 mm					34359738368 bit	2.7 V			e1	30	260	MLC NAND TYPE		18 mm			2.7
MX25R3235FBDIL0	Macronix	FLASH	INDUSTRIAL	12	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS		6 mA	4194304 words	1.8			8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA12,5X7,14/8	2		20	.35 mm	85 Cel	3-STATE	4MX8	4M	-40 Cel					BOTTOM		HARDWARE/SOFTWARE	R-PBGA-B12		3.6 V	.52 mm	100000 Write/Erase Cycles	80 MHz				SPI		33554432 bit	1.65 V				NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.000024 Amp				1.8
MX25U12835FZNI-10G	Macronix	FLASH	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS		20 mA	33554432 words	1.8		1.8	4	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.25	2	Flash Memories	10	1.27 mm	85 Cel		32MX4	32M	-40 Cel			MATTE TIN		DUAL		HARDWARE/SOFTWARE	R-PDSO-N8	3	2 V	.8 mm	100000 Write/Erase Cycles	104 MHz	5 mm	Not Qualified		SPI		134217728 bit	1.65 V	CAN BE ORGANISED AS 128 MBIT X 1		e3			NOR TYPE	.00002 Amp	6 mm			1.8
MX66L51235FZ2I-10G	Macronix	FLASH	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS		40 mA	134217728 words	3		3/3.3	4	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.3	2	Flash Memories	20	1.27 mm	85 Cel		128MX4	128M	-40 Cel			TIN		DUAL		HARDWARE/SOFTWARE	R-PDSO-N8	3	3.6 V	.8 mm	100000 Write/Erase Cycles	104 MHz	6 mm	Not Qualified		SPI		536870912 bit	2.7 V	ALSO IT CAN BE CONFIGURED AS 512M X 1 BIT		e3			NOR TYPE	.00004 Amp	8 mm			3
PC28F512P33BFD	Micron Technology	FLASH	INDUSTRIAL	64	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS			33554432 words	3			16	GRID ARRAY, THIN PROFILE					1 mm	85 Cel		32MX16	32M	-40 Cel			TIN SILVER COPPER		BOTTOM			R-PBGA-B64		3.6 V	1.2 mm			8 mm				BOTTOM	536870912 bit	2.3 V	BOTTOM BOOT; IT ALSO OPERATES IN ASYNCHRONOUS MODE		e1					10 mm		95 ns	3
S25FL256LAGNFV011	Infineon Technologies	FLASH	INDUSTRIAL	8	HVQCCN	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS		50 mA	33554432 words	3			8	CHIP CARRIER, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.3			20	1.27 mm	105 Cel	3-STATE	32MX8	32M	-40 Cel			MATTE TIN		DUAL		HARDWARE/SOFTWARE	R-PDSO-N8	3	3.6 V	.8 mm	100000 Write/Erase Cycles	133 MHz	6 mm			SPI		268435456 bit	2.7 V			e3			NOR TYPE	.00006 Amp	8 mm			3
S25FS512SAGNFI013	Infineon Technologies	FLASH	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS		100 mA	67108864 words	1.8			8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.3			20	1.27 mm	85 Cel	3-STATE	64MX8	64M	-40 Cel			MATTE TIN		DUAL		HARDWARE/SOFTWARE	R-PDSO-N8	3	2 V	.8 mm	100000 Write/Erase Cycles	133 MHz	6 mm			SPI		536870912 bit	1.7 V			e3	30	260	NOR TYPE	.0001 Amp	8 mm			1.8
S29GL01GP11FFIR20	Cypress Semiconductor	FLASH	INDUSTRIAL	64	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	128K	110 mA	1073741824 words	3.3	YES	3.3	1	GRID ARRAY, LOW PROFILE	BGA64,8X8,40	8	Flash Memories		1 mm	85 Cel		1GX1	1G	-40 Cel	1K	YES	Tin/Silver/Copper (Sn96.5Ag3.0Cu0.5)	YES	BOTTOM			R-PBGA-B64	3	3.6 V	1.4 mm			11 mm	Not Qualified				1073741824 bit	3 V		8/16	e1	40	260	NOR TYPE	.000005 Amp	13 mm	YES	110 ns	3	YES
S29GL01GS10TFI010	Infineon Technologies	FLASH		56	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	128K	100 mA	134217728 words	3	YES		8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP56,.8,20	1		2	.5 mm	85 Cel	3-STATE	128MX8	128M	-40 Cel	1K	YES	MATTE TIN	YES	DUAL			R-PDSO-G56	3	3.6 V	1.2 mm	100000 Write/Erase Cycles		14 mm					1073741824 bit	2.7 V	20 YEARS DATA RETENTION; 10000 ERASE/PROGRAM CYCLES	32	e3			NAND TYPE	.0001 Amp	18.4 mm	YES	100 ns	3	YES
S29GL064S90FHI020	Infineon Technologies	FLASH		64	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	64K	60 mA	4194304 words	3	YES		16	GRID ARRAY, LOW PROFILE	BGA64,8X8,40	8		20	1 mm	85 Cel	3-STATE	4MX16	4M	-40 Cel	128	YES		YES	BOTTOM		HARDWARE/SOFTWARE	R-PBGA-B64		3.6 V	1.4 mm	100000 Write/Erase Cycles		11 mm		60 ms			67108864 bit	2.7 V		8/16				NOR TYPE	.0002 Amp	13 mm	YES	90 ns	3	YES
SDSDAE-008G	Sandisk	FLASH CARD	OTHER		DIE	RECTANGULAR		YES	1	CMOS		NO LEAD					8589934592 words				8	UNCASED CHIP						85 Cel		8GX8	8G	-25 Cel					UPPER			R-XUUC-N											68719476736 bit							NAND TYPE

Flash Memory

Flash memory is a type of non-volatile computer memory that is commonly used in digital devices such as USB drives, solid-state drives, and digital cameras. It is a type of EEPROM (Electrically Erasable Programmable Read-Only Memory) that allows data to be erased and reprogrammed in blocks instead of one byte at a time. Flash memory uses a floating gate transistor to store data, which allows it to retain information even when the power is turned off.

Flash memory is widely used in digital devices because of its high capacity, small size, and fast access times. It is also more durable than other types of memory, such as hard disk drives, because it has no moving parts. This makes it ideal for use in portable devices that may be subject to physical shock or vibration.

There are two types of flash memory: NOR flash and NAND flash. NOR flash is faster than NAND flash, but it has lower density and higher cost per bit. NOR flash is typically used for code storage, such as firmware or boot code, because it provides faster access times. NAND flash has higher density and lower cost per bit, which makes it ideal for data storage applications.

Flash memory has a limited lifespan, as it can only be erased and reprogrammed a limited number of times. This is because the process of erasing and reprogramming the memory causes wear and tear on the floating gate transistor. However, modern flash memory devices have a sophisticated wear-leveling algorithm that distributes writes evenly across the memory, which extends the lifespan of the device.