RECTANGULAR Flash Memory 2,400+

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Screening Level	Terminal Form	Parallel or Serial	Operating Mode	Sector Size (Words)	Maximum Supply Current	No. of Words	Nominal Supply Voltage / Vsup (V)	Toggle Bit	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Alternate Memory Width	Sub-Category	Minimum Data Retention Time	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	No. of Sectors/Size	Command User Interface	Terminal Finish	Ready or Busy	Terminal Position	No. of Ports	Write Protection	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Endurance	Maximum Clock Frequency (fCLK)	Width	Qualification	Maximum Write Cycle Time (tWC)	Serial Bus Type	Boot Block	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	Page Size (words)	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Type	Maximum Standby Current	Length	Common Flash Interface	Maximum Access Time	Programming Voltage (V)	Data Polling
MT28EW512ABA1HJS-0SIT	Micron Technology	FLASH	INDUSTRIAL	56	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS			33554432 words	3			16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH		8			.5 mm	85 Cel		32MX16	32M	-40 Cel					DUAL			R-PDSO-G56		3.6 V	1.2 mm			14 mm					536870912 bit	2.7 V				30	260	NOR TYPE		18.4 mm		95 ns	3
MT29F128G08CFAAAWPITZ:A	Micron Technology	FLASH	INDUSTRIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS			17179869184 words	3.3			8	SMALL OUTLINE, THIN PROFILE					.5 mm	85 Cel		16GX8	16G	-40 Cel			MATTE TIN		DUAL			R-PDSO-G48		3.6 V	1.2 mm			12 mm					137438953472 bit	2.7 V			e3			MLC NAND TYPE		18.4 mm			2.7
MT29F16G08ABACAWP-Z:C	Micron Technology	FLASH	COMMERCIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	SYNCHRONOUS	512K	50 mA	2147483648 words	3.3	NO	3/3.3	8	SMALL OUTLINE, THIN PROFILE	TSSOP48,.8,20		Flash Memories		.5 mm	70 Cel		2GX8	2G	0 Cel	4K	YES		YES	DUAL			R-PDSO-G48		3.6 V	1.2 mm			12 mm	Not Qualified				17179869184 bit	2.7 V		4K				SLC NAND TYPE	.00005 Amp	18.4 mm		20 ns	2.7	NO
MT29F32G08ABCABH1-10ITZ:A	Micron Technology	FLASH	INDUSTRIAL	100	BGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		BALL	PARALLEL		1M	50 mA	4294967296 words		NO	1.8,3/3.3	8	GRID ARRAY	BGA100,10X17,40		Flash Memories		1 mm	85 Cel		4GX8	4G	-40 Cel	4K	YES		YES	BOTTOM			R-PBGA-B100							Not Qualified				34359738368 bit			8K				SLC NAND TYPE	.00001 Amp			20 ns		NO
MTFC4GACAANA-4MIT	Micron Technology	FLASH CARD	INDUSTRIAL	100	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS			4294967296 words	3.3			8	GRID ARRAY, THIN PROFILE	BGA100,10X17,40				1 mm	85 Cel	OPEN-DRAIN	4GX8	4G	-40 Cel			TIN SILVER COPPER		BOTTOM			R-PBGA-B100		3.6 V	1.2 mm		52 MHz	14 mm					34359738368 bit	2.7 V				30	260	MLC NAND TYPE		18 mm			3.3
MX25L25645GMI-08G	Macronix	FLASH	INDUSTRIAL	16	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		25 mA	33554432 words	3			8	SMALL OUTLINE	SOP16,.4			20	1.27 mm	85 Cel	3-STATE	32MX8	32M	-40 Cel			TIN		DUAL		HARDWARE/SOFTWARE	R-PDSO-G16		3.6 V	2.65 mm	100000 Write/Erase Cycles	120 MHz	7.52 mm			SPI		268435456 bit	2.7 V			e3			NOR TYPE	.00002 Amp	10.3 mm			3
N25Q064A13ESFA0F	Micron Technology	FLASH	AUTOMOTIVE	16	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		20 mA	8388608 words	3		3/3.3	8	SMALL OUTLINE	SOP16,.4		Flash Memories	20	1.27 mm	125 Cel		8MX8	8M	-40 Cel					DUAL		HARDWARE/SOFTWARE	R-PDSO-G16		3.6 V	2.65 mm	100000 Write/Erase Cycles	108 MHz	7.5 mm	Not Qualified		SPI		67108864 bit	2.7 V				NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.0001 Amp	10.3 mm			3
S29AL008J55TFIR10	Infineon Technologies	FLASH	INDUSTRIAL	48	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	12 mA	524288 words	3.3	YES	3/3.3	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP48,.8,20	8	Flash Memories	20	.5 mm	85 Cel	3-STATE	512KX16	512K	-40 Cel	1,2,1,15	YES	MATTE TIN	YES	DUAL			R-PDSO-G48	3	3.6 V	1.2 mm	1000000 Write/Erase Cycles		12 mm	Not Qualified			TOP	8388608 bit	3 V	TOP BOOT BLOCK		e3	40	260	NOR TYPE	.000005 Amp	18.4 mm	YES	55 ns	3	YES
S29GL256S10TFB020	Infineon Technologies	FLASH		56	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100; TS 16949	GULL WING	PARALLEL	ASYNCHRONOUS	128K	100 mA	33554432 words	3	YES		8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP56,.8,20	1		2	.5 mm	105 Cel	3-STATE	32MX8	32M	-40 Cel	256	YES	MATTE TIN	YES	DUAL			R-PDSO-G56	3	3.6 V	1.2 mm	100000 Write/Erase Cycles		14 mm					268435456 bit	2.7 V	20 YEARS DATA RETENTION; 10000 ERASE/PROGRAM CYCLES	32	e3			NAND TYPE	.0002 Amp	18.4 mm	YES	100 ns	3	YES
S29GL512T10TFI023	Infineon Technologies	FLASH	INDUSTRIAL	56	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS			33554432 words	3			16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH		8			.5 mm	85 Cel		32MX16	32M	-40 Cel			MATTE TIN		DUAL			R-PDSO-G56	3	3.6 V	1.2 mm			14 mm					536870912 bit	2.7 V			e3					18.4 mm		100 ns	2.7
S29PL127J70BAI000	Cypress Semiconductor	FLASH	INDUSTRIAL	80	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	4K,32K	70 mA	8388608 words	3	YES	3/3.3	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA80,8X12,32		Flash Memories		.8 mm	85 Cel		8MX16	8M	-40 Cel	16,254	YES		YES	BOTTOM			R-PBGA-B80		3.6 V	1 mm			8 mm	Not Qualified			BOTTOM/TOP	134217728 bit	2.7 V	TOP AND BOTTOM BOOT BLOCK	8		NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.000005 Amp	11 mm	YES	70 ns	3	YES
SST39LF401C-55-4C-B3KE	Microchip Technology	FLASH	COMMERCIAL	48	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	8K,4K,16K,32K	30 mA	262144 words	3.3	YES	3.3	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA48,6X8,32		Flash Memories	100	.8 mm	70 Cel	3-STATE	256KX16	256K	0 Cel	1,2,1,7	YES	TIN SILVER COPPER	YES	BOTTOM	1		R-PBGA-B48	3	3.6 V	1.2 mm	100000 Write/Erase Cycles		6 mm	Not Qualified			BOTTOM	4194304 bit	3 V	BOTTOM BOOT BLOCK		e1	40	260	NOR TYPE	.00002 Amp	8 mm	YES	55 ns	3.3	YES
W25N512GVEIG	Winbond Electronics	FLASH	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS			67108864 words	3			8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE		1			1.27 mm	85 Cel		64MX8	64M	-40 Cel					DUAL			R-PDSO-N8		3.6 V	.8 mm		166 MHz	6 mm					536870912 bit	2.7 V				NOT SPECIFIED	NOT SPECIFIED	SLC NAND TYPE		8 mm			3
W25Q128FVAIG	Winbond Electronics	FLASH	INDUSTRIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	SERIAL	SYNCHRONOUS		20 mA	134217728 words	3		3/3.3	1	IN-LINE	DIP8,.3		Flash Memories	20	2.54 mm	85 Cel		128MX1	128M	-40 Cel					DUAL		HARDWARE/SOFTWARE	R-PDIP-T8		3.6 V	5.33 mm	100000 Write/Erase Cycles	104 MHz	7.62 mm	Not Qualified		SPI		134217728 bit	2.7 V						NOR TYPE	.00002 Amp	9.27 mm			3
W25Q256JVBIQ	Winbond Electronics	FLASH	INDUSTRIAL	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS		25 mA	33554432 words	3.3			8	GRID ARRAY, THIN PROFILE	BGA24,5X5,40			20	1 mm	85 Cel	3-STATE	32MX8	32M	-40 Cel					BOTTOM		HARDWARE/SOFTWARE	R-PBGA-B24		3.6 V	1.2 mm	100000 Write/Erase Cycles	133 MHz	6 mm			SPI		268435456 bit	3 V	ALSO OPERATES AT 104MHZ AT 2.7-3.0V			NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.00002 Amp	8 mm			3.3
W25Q256JWBIQ	Winbond Electronics	FLASH	INDUSTRIAL	8	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS		12 mA	33554432 words	1.8			8	GRID ARRAY, THIN PROFILE	BGA24,5X5,40			20	1 mm	85 Cel		32MX8	32M	-40 Cel					BOTTOM		HARDWARE/SOFTWARE	R-PBGA-B24		1.95 V	1.2 mm	100000 Write/Erase Cycles	133 MHz	6 mm			SPI		268435456 bit	1.7 V				NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.0001 Amp	8 mm			1.8
WDS500G3XHC	Western Digital	FLASH MODULE	COMMERCIAL		SMA	RECTANGULAR	UNSPECIFIED	NO	1	CMOS		NO LEAD					536870912000 words				8	MICROELECTRONIC ASSEMBLY						70 Cel		500GX8	500G	0 Cel					SINGLE			R-XSMA-N			8.1 mm	300 Write/Erase Cycles		24.2 mm					4294967296000 bit							NAND TYPE		80 mm
AM29F160DB90EF	Spansion	FLASH	INDUSTRIAL	48	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	50 mA	1048576 words	5	YES	5	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP48,.8,20	8	Flash Memories		.5 mm	85 Cel		1MX16	1M	-40 Cel	1,2,1,31	YES	MATTE TIN	YES	DUAL			R-PDSO-G48	3	5.5 V	1.2 mm			12 mm	Not Qualified	90 ms		BOTTOM	16777216 bit	4.5 V	MIN 1000K WRITE CYCLE; CAN ALSO BE CONFG AS 2M X 8; BOTTOM BOOT BLOCK		e3	40	260	NOR TYPE	.000005 Amp	18.4 mm	YES	90 ns	5	YES
AM29LV040B-70JC	Spansion	FLASH	COMMERCIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	64K	30 mA	524288 words	3	YES	3/3.3	8	CHIP CARRIER	LDCC32,.5X.6		Flash Memories		1.27 mm	70 Cel		512KX8	512K	0 Cel	8	YES	TIN LEAD		QUAD			R-PQCC-J32	3	3.6 V	3.556 mm	1000000 Write/Erase Cycles		11.43 mm	Not Qualified				4194304 bit	2.7 V			e0		260	NOR TYPE	.000005 Amp	13.97 mm		70 ns	3	YES
AT25DF021A-MAHN-T	Renesas Electronics	FLASH	INDUSTRIAL		HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS			2097152 words	1.8			1	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE					.5 mm	85 Cel		2MX1	2M	-40 Cel			NICKEL PALLADIUM GOLD		DUAL			R-PDSO-N	1	3.6 V	.6 mm		104 MHz	2 mm					2097152 bit	1.65 V	IT ALSO OPERATES AT 2.3V MIN		e4			NOR TYPE		3 mm			1.8
AT25DN512C-SSHF-B	Renesas Electronics	FLASH	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		18 mA	65536 words	3			8	SMALL OUTLINE	SOP8,.25			20	1.27 mm	85 Cel	3-STATE	64KX8	64K	-40 Cel			NICKEL PALLADIUM GOLD		DUAL		HARDWARE/SOFTWARE	R-PDSO-G8	1	3.6 V	1.75 mm	100000 Write/Erase Cycles	104 MHz	3.9 mm			SPI		524288 bit	2.3 V			e4			NOR TYPE	.000015 Amp	4.925 mm			3
AT25FF161A-SHN-T	Renesas Electronics	FLASH	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		17.5 mA	2097152 words	1.8			8	SMALL OUTLINE	SOP8,.3			20	1.27 mm	85 Cel	3-STATE	2MX8	2M	-40 Cel			Nickel/Palladium/Gold (Ni/Pd/Au)		DUAL		HARDWARE/SOFTWARE	R-PDSO-G8		3.6 V	2.16 mm	100000 Write/Erase Cycles	133 MHz	5.24 mm			SPI		16777216 bit	1.65 V			e4			NOR TYPE	.00005 Amp	5.29 mm			1.8
AT25XE041B-MHNHR-T	Renesas Electronics	FLASH	AUTOMOTIVE	8	SON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS			4194304 words				1	SMALL OUTLINE						125 Cel		4MX1	4M	-40 Cel					DUAL			R-PDSO-N8	1	3.6 V			85 MHz						4194304 bit	1.7 V											1.8
AT45DB041D-SSU	Atmel	FLASH	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		17 mA	4194304 words	3		3/3.3	1	SMALL OUTLINE	SOP8,.25		Flash Memories	20	1.27 mm	85 Cel		4MX1	4M	-40 Cel			Matte Tin (Sn)		DUAL		HARDWARE/SOFTWARE	R-PDSO-G8	1	3.6 V	1.75 mm	100000 Write/Erase Cycles	66 MHz	3.9 mm	Not Qualified		SPI		4194304 bit	2.7 V	ORGANIZED AS 2048 PAGES OF 264 BYTES EACH		e3	40	260	NOR TYPE	.00001 Amp	4.925 mm			2.7
IS25LP128F-JLLE	Integrated Silicon Solution	FLASH	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS		30 mA	16777216 words	3			8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.3	1		20	1.27 mm	105 Cel	3-STATE	16MX8	16M	-40 Cel			Tin (Sn)		DUAL		HARDWARE/SOFTWARE	R-PDSO-N8		3.6 V	.8 mm	100000 Write/Erase Cycles	166 MHz	6 mm			SPI		134217728 bit	2.3 V	ALSO OPERATES WITH 133MHZ @ 2.3VMIN SUPPLY		e3	NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.00007 Amp	8 mm			3
IS25WP256E-JLLE-TR	Integrated Silicon Solution	FLASH	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS			33554432 words	1.8			8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE		1			1.27 mm	105 Cel		32MX8	32M	-40 Cel					DUAL			R-PDSO-N8		1.95 V	.8 mm		166 MHz	6 mm					268435456 bit	1.65 V				NOT SPECIFIED	NOT SPECIFIED			8 mm			1.8
JS28F320J3F75A	Micron Technology	FLASH	INDUSTRIAL	56	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	128K	80 mA	2097152 words	3	NO	3/3.3	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP56,.8,20	8	Flash Memories		.5 mm	85 Cel		2MX16	2M	-40 Cel	32	YES	Matte Tin (Sn)	YES	DUAL			R-PDSO-G56		3.6 V	1.2 mm			14 mm	Not Qualified				33554432 bit	2.7 V		4/8	e3	30	260	NOR TYPE	.00012 Amp	18.4 mm	YES	75 ns	2.7	NO
M28W320FCT70N6E	STMicroelectronics	FLASH	INDUSTRIAL	48	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	4K,32K	20 mA	2097152 words	3	NO	3/3.3	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP48,.8,20		Flash Memories		.5 mm	85 Cel		2MX16	2M	-40 Cel	8,63	YES	TIN/TIN BISMUTH		DUAL			R-PDSO-G48		3.6 V	1.2 mm			12 mm	Not Qualified			TOP	33554432 bit	2.7 V			e3/e6	40	260	NOR TYPE	.000005 Amp	18.4 mm	YES	70 ns	3	NO
MT35XU512ABA1G12-0AAT	Micron Technology	FLASH	INDUSTRIAL	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	SERIAL	SYNCHRONOUS			536870912 words	1.8			1	GRID ARRAY, THIN PROFILE					1 mm	105 Cel		512MX1	512M	-40 Cel			TIN SILVER COPPER		BOTTOM			R-PBGA-B24		2 V	1.2 mm		166 MHz	6 mm					536870912 bit	1.7 V			e1	30	260			8 mm			1.8
MTFC4GACAALT-4MIT	Micron Technology	FLASH		100	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS			4294967296 words	3.3			8	GRID ARRAY, THIN PROFILE	BGA100,10X17,40				1 mm	85 Cel	OPEN-DRAIN	4GX8	4G	-40 Cel		NO	Tin/Silver/Copper (Sn/Ag/Cu)		BOTTOM			R-PBGA-B100		3.6 V	1.2 mm		52 MHz	14 mm					34359738368 bit	2.7 V			e1	30	260	MLC NAND TYPE		18 mm			3.3	NO
MTFC64GAZAQHD-IT	Micron Technology	FLASH CARD		153	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS			68719476736 words				8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA153,14X14,20			1	.5 mm	95 Cel		64GX8	64G	-40 Cel					BOTTOM			R-PBGA-B153		3.6 V	.9 mm			11.5 mm					549755813888 bit	2.7 V						NAND TYPE		13 mm
MX25L6406EMI-12G	Macronix	FLASH	INDUSTRIAL	16	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		25 mA	8388608 words	3.3		3/3.3	8	SMALL OUTLINE	SOP16,.4	1	Flash Memories	20	1.27 mm	85 Cel		8MX8	8M	-40 Cel					DUAL		HARDWARE/SOFTWARE	R-PDSO-G16		3.6 V	2.65 mm	100000 Write/Erase Cycles	86 MHz	7.52 mm	Not Qualified		SPI		67108864 bit	2.7 V				NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.00002 Amp	10.3 mm			3.3
MX29LV160DTTI-70G	Macronix	FLASH	INDUSTRIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	30 mA	1048576 words	3	YES	3/3.3	16	SMALL OUTLINE, THIN PROFILE	TSSOP48,.8,20	8	Flash Memories		.5 mm	85 Cel		1MX16	1M	-40 Cel	1,2,1,31	YES		YES	DUAL			R-PDSO-G48		3.6 V	1.2 mm			12 mm	Not Qualified			TOP	16777216 bit	2.7 V	TOP BOOT BLOCK			NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.000015 Amp	18.4 mm	YES	70 ns	3	YES
MX29LV640EBXEI-70G	Macronix	FLASH	INDUSTRIAL	48	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS			4194304 words	3			16	GRID ARRAY, LOW PROFILE, FINE PITCH		8			.8 mm	85 Cel		4MX16	4M	-40 Cel					BOTTOM			R-PBGA-B48		3.6 V	1.3 mm			6 mm	Not Qualified			BOTTOM	67108864 bit	2.7 V	BOTTOM BOOT BLOCK			NOT SPECIFIED	NOT SPECIFIED			8 mm		70 ns	3
S29GL128P90FFIR22	Infineon Technologies	FLASH	INDUSTRIAL	64	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	128K	110 mA	134217728 words	3.3	YES	3.3	1	GRID ARRAY, LOW PROFILE	BGA64,8X8,40	8	Flash Memories		1 mm	85 Cel		128MX1	128M	-40 Cel	128	YES	TIN SILVER COPPER	YES	BOTTOM			R-PBGA-B64	3	3.6 V	1.4 mm			11 mm	Not Qualified				134217728 bit	3 V		8/16	e1	40	260	NOR TYPE	.000005 Amp	13 mm	YES	90 ns	3	YES
S34ML08G201TFI000	Cypress Semiconductor	FLASH	INDUSTRIAL	48	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	256K	30 mA	1073741824 words	3.3	NO	3/3.3	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP48,.8,20		Flash Memories		.5 mm	85 Cel		1GX8	1G	-40 Cel	4K	YES	MATTE TIN	YES	DUAL			R-PDSO-G48	3	3.6 V	1.2 mm			12 mm	Not Qualified				8589934592 bit	2.7 V		2K	e3		260	SLC NAND TYPE	.00005 Amp	18.4 mm			3	NO
SST39SF040-70-4I-WHE-T	Microchip Technology	FLASH	INDUSTRIAL	32	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	4K	35 mA	524288 words	5	YES	5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP32,.56,20		Flash Memories	100	.5 mm	85 Cel	3-STATE	512KX8	512K	-40 Cel	128	YES	MATTE TIN		DUAL	1		R-PDSO-G32	3	5.5 V	1.2 mm	100000 Write/Erase Cycles		8 mm	Not Qualified				4194304 bit	4.5 V			e3	30	260	NOR TYPE	.0001 Amp	12.4 mm		70 ns	5	YES
AT25DF641A-MH-Y	Renesas Electronics	FLASH	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS		40 mA	67108864 words	3		3/3.3	1	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.25		Flash Memories	20	1.27 mm	85 Cel		64MX1	64M	-40 Cel			NICKEL PALLADIUM GOLD		DUAL		HARDWARE	R-PDSO-N8	1	3.6 V	.6 mm	100000 Write/Erase Cycles	85 MHz	5 mm	Not Qualified		SPI		67108864 bit	2.7 V			e4			NOR TYPE	.00002 Amp	6 mm			2.7
AT25EU0021A-SSHN-B	Renesas Electronics	FLASH		8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		3 mA	262144 words	1.8			8	SMALL OUTLINE	SOP8,.25			20	1.27 mm	85 Cel	3-STATE	256KX8	256K	-40 Cel					DUAL		HARDWARE/SOFTWARE	R-PDSO-G8	1	3.6 V	1.75 mm	100000 Write/Erase Cycles	85 MHz	3.9 mm			SPI		2097152 bit	1.65 V						NOR TYPE	.0000145 Amp	4.925 mm			1.8
AT25XE081D-SHN-T	Renesas Electronics	FLASH	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		17.5 mA	2097152 words	3.3			4	SMALL OUTLINE	SOP8,.3			20	1.27 mm	85 Cel	3-STATE	2MX4	2M	-40 Cel					DUAL		HARDWARE/SOFTWARE	R-PDSO-G8	1	3.6 V	2.16 mm	100000 Write/Erase Cycles	133 MHz	5.24 mm			SPI		8388608 bit	2.7 V						NOR TYPE	.00005 Amp	5.29 mm			3.3
IS25LP256D-RMLE-TR	Integrated Silicon Solution	FLASH	INDUSTRIAL	16	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS			33554432 words	3			8	SMALL OUTLINE					1.27 mm	105 Cel		32MX8	32M	-40 Cel					DUAL			R-PDSO-G16		3.6 V	2.65 mm		133 MHz	7.49 mm					268435456 bit	2.3 V				NOT SPECIFIED	NOT SPECIFIED			10.31 mm			3
IS25WP064A-JMLE-TR	Integrated Silicon Solution	FLASH	INDUSTRIAL	16	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS			8388608 words	1.8			8	SMALL OUTLINE					1.27 mm	105 Cel		8MX8	8M	-40 Cel					DUAL			R-PDSO-G16		1.95 V	2.65 mm		133 MHz	7.49 mm					67108864 bit	1.65 V				NOT SPECIFIED	NOT SPECIFIED			10.31 mm			1.8
IS25WP256E-JLLE	Integrated Silicon Solution	FLASH	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS			33554432 words	1.8			8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE		1			1.27 mm	105 Cel		32MX8	32M	-40 Cel					DUAL			R-PDSO-N8		1.95 V	.8 mm		166 MHz	6 mm					268435456 bit	1.65 V				NOT SPECIFIED	NOT SPECIFIED			8 mm			1.8
M29W640FB70N6E	STMicroelectronics	FLASH	INDUSTRIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	8K,64K	20 mA	4194304 words	3	YES	3/3.3	16	SMALL OUTLINE, THIN PROFILE	TSSOP48,.8,20	8	Flash Memories		.5 mm	85 Cel		4MX16	4M	-40 Cel	8,127	YES	TIN/TIN BISMUTH	YES	DUAL			R-PDSO-G48		3.6 V	1.2 mm			12 mm	Not Qualified			BOTTOM	67108864 bit	2.7 V		4/8	e3/e6	40	260	NOR TYPE	.0001 Amp	18.4 mm	YES	70 ns	3	YES
M58BW016FB7T3T	STMicroelectronics	FLASH	AUTOMOTIVE	80	QFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	PARALLEL	ASYNCHRONOUS	2K,16K	40 mA	524288 words	3	NO	2.5/3.3,3/3.3	32	FLATPACK	QFP80,.7X.9,32		Flash Memories		.8 mm	125 Cel		512KX32	512K	-40 Cel	8,31	YES			QUAD			R-PQFP-G80		3.6 V	3.4 mm			14 mm	Not Qualified			BOTTOM	16777216 bit	2.7 V	SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE; BOTTOM BOOT BLOCK			NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.000005 Amp	20 mm	YES	70 ns	3	NO
MT25QU256ABA8E12-0AUT	Micron Technology	FLASH	AUTOMOTIVE	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	SERIAL	SYNCHRONOUS			33554432 words	1.8			8	GRID ARRAY, THIN PROFILE		1			1 mm	125 Cel		32MX8	32M	-40 Cel					BOTTOM			R-PBGA-B24		2 V	1.2 mm		166 MHz	6 mm					268435456 bit	1.7 V				NOT SPECIFIED	NOT SPECIFIED			8 mm			1.8
S25FL256SAGMFI010	Infineon Technologies	FLASH	INDUSTRIAL	16	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		100 mA	67108864 words	3		3/3.3	4	SMALL OUTLINE	SOP16,.4	2	Flash Memories	20	1.27 mm	85 Cel		64MX4	64M	-40 Cel			MATTE TIN		DUAL		HARDWARE/SOFTWARE	R-PDSO-G16	3	3.6 V	2.65 mm	100000 Write/Erase Cycles	133 MHz	7.5 mm	Not Qualified	500 ms	SPI		268435456 bit	2.7 V	IT ALSO CONFIGURED AS 256M X 1		e3			NOR TYPE	.0001 Amp	10.3 mm			3
S29AL016J70TFA020	Infineon Technologies	FLASH	INDUSTRIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	30 mA	1048576 words	3	YES		16	SMALL OUTLINE, THIN PROFILE	TSSOP48,.8,20	8		20	.5 mm	85 Cel	3-STATE	1MX16	1M	-40 Cel	1,2,1,31	YES	MATTE TIN	YES	DUAL			R-PDSO-G48	3	3.6 V	1.2 mm	1000000 Write/Erase Cycles		12 mm				BOTTOM	16777216 bit	2.7 V			e3			NOR TYPE	.000005 Amp	18.4 mm	YES	70 ns	3	YES

Flash Memory

Flash memory is a type of non-volatile computer memory that is commonly used in digital devices such as USB drives, solid-state drives, and digital cameras. It is a type of EEPROM (Electrically Erasable Programmable Read-Only Memory) that allows data to be erased and reprogrammed in blocks instead of one byte at a time. Flash memory uses a floating gate transistor to store data, which allows it to retain information even when the power is turned off.

Flash memory is widely used in digital devices because of its high capacity, small size, and fast access times. It is also more durable than other types of memory, such as hard disk drives, because it has no moving parts. This makes it ideal for use in portable devices that may be subject to physical shock or vibration.

There are two types of flash memory: NOR flash and NAND flash. NOR flash is faster than NAND flash, but it has lower density and higher cost per bit. NOR flash is typically used for code storage, such as firmware or boot code, because it provides faster access times. NAND flash has higher density and lower cost per bit, which makes it ideal for data storage applications.

Flash memory has a limited lifespan, as it can only be erased and reprogrammed a limited number of times. This is because the process of erasing and reprogramming the memory causes wear and tear on the floating gate transistor. However, modern flash memory devices have a sophisticated wear-leveling algorithm that distributes writes evenly across the memory, which extends the lifespan of the device.