UNSPECIFIED Flash Memory 207

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Terminal Form	Parallel or Serial	Operating Mode	Maximum Supply Current	No. of Words	Nominal Supply Voltage / Vsup (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Alternate Memory Width	Minimum Data Retention Time	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	Terminal Finish	Terminal Position	Write Protection	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Endurance	Maximum Clock Frequency (fCLK)	Qualification	Serial Bus Type	Boot Block	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Type	Maximum Standby Current	Maximum Access Time	Programming Voltage (V)
HB286045C3	Renesas Electronics	FLASH CARD	COMMERCIAL	50		UNSPECIFIED	UNSPECIFIED	NO	1	CMOS	UNSPECIFIED	PARALLEL	ASYNCHRONOUS		47185920 words	3.3	8	MICROELECTRONIC ASSEMBLY		16		60 Cel		45MX8	45M	0 Cel		UNSPECIFIED		X-XXMA-X50		3.45 V			Not Qualified			377487360 bit	3.15 V	USER SELECTABLE 5V VCC				NOR TYPE		250 ns	3
HB286030C3	Renesas Electronics	FLASH CARD	COMMERCIAL	50		UNSPECIFIED	UNSPECIFIED	NO	1	CMOS	UNSPECIFIED	PARALLEL	ASYNCHRONOUS		31457280 words	3.3	8	MICROELECTRONIC ASSEMBLY		16		60 Cel		30MX8	30M	0 Cel		UNSPECIFIED		X-XXMA-X50		3.45 V			Not Qualified			251658240 bit	3.15 V	USER SELECTABLE 5V VCC				NOR TYPE		250 ns	3
HB28J256CFC	Renesas Electronics	FLASH CARD	COMMERCIAL	50		UNSPECIFIED	UNSPECIFIED	NO	1	CMOS	UNSPECIFIED	PARALLEL	ASYNCHRONOUS		134217728 words	3.3	16	MICROELECTRONIC ASSEMBLY				60 Cel		128MX16	128M	0 Cel		UNSPECIFIED		X-XXMA-X50		3.465 V			Not Qualified			2147483648 bit	3.135 V					AND TYPE		250 ns	3.3
HB288032C5	Renesas Electronics	FLASH CARD		50		UNSPECIFIED	UNSPECIFIED	NO			UNSPECIFIED							MICROELECTRONIC ASSEMBLY										UNSPECIFIED		X-XXMA-X50					Not Qualified												3.3
HB289032C4	Renesas Electronics	FLASH CARD		50		UNSPECIFIED	UNSPECIFIED	NO			UNSPECIFIED							MICROELECTRONIC ASSEMBLY										UNSPECIFIED		X-XXMA-X50					Not Qualified												3.3
HB286015A1	Renesas Electronics	FLASH CARD	COMMERCIAL	68		UNSPECIFIED	UNSPECIFIED	NO	1	CMOS	UNSPECIFIED	PARALLEL	ASYNCHRONOUS		15728640 words	5	8	MICROELECTRONIC ASSEMBLY				60 Cel		15MX8	15M	0 Cel		UNSPECIFIED		X-XXMA-X68		5.5 V	100000 Write/Erase Cycles		Not Qualified			125829120 bit	4.5 V	100000 WRITE ENDURANCE MIN				NOR TYPE		250 ns	5
AT25SF161B-DWF	Renesas Electronics	FLASH	INDUSTRIAL	8	DIE	UNSPECIFIED	UNSPECIFIED	YES	1	CMOS	NO LEAD	SERIAL	SYNCHRONOUS	20 mA	16777216 words	3	1				20	85 Cel	3-STATE	16MX1	16M	-40 Cel		UNSPECIFIED	HARDWARE/SOFTWARE	X-XUUC-N	1	3.6 V	100000 Write/Erase Cycles	108 MHz		SPI		16777216 bit	2.7 V					NOR TYPE	.00003 Amp		3
AT25SL641-DWF	Renesas Electronics	FLASH	INDUSTRIAL	8	DIE	UNSPECIFIED	PLASTIC/EPOXY	YES	1	CMOS	NO LEAD	SERIAL	SYNCHRONOUS	27 mA	8388608 words	1.8	8	UNCASED CHIP	DIE OR CHIP		20	85 Cel	3-STATE	8MX8	8M	-40 Cel		UPPER	HARDWARE/SOFTWARE	X-XUUC-N		2 V	100000 Write/Erase Cycles	133 MHz		SPI		67108864 bit	1.7 V					NOR TYPE	.00005 Amp		1.8
AT25XE081D-DWF	Renesas Electronics	FLASH	INDUSTRIAL	8	DIE	UNSPECIFIED	PLASTIC/EPOXY	YES	1	CMOS	NO LEAD	SERIAL	SYNCHRONOUS	17.5 mA	2097152 words	3.3	4	UNCASED CHIP			20	85 Cel	3-STATE	2MX4	2M	-40 Cel		UPPER	HARDWARE/SOFTWARE	X-XUUC-N	1	3.6 V	100000 Write/Erase Cycles	133 MHz		SPI		8388608 bit	2.7 V					NOR TYPE	.00005 Amp		3.3
AT25XE041D-DWF	Renesas Electronics	FLASH	INDUSTRIAL		DIE	UNSPECIFIED	UNSPECIFIED	YES	1	CMOS	NO LEAD	SERIAL	SYNCHRONOUS	17.5 mA	2097152 words	3.3	2	UNCASED CHIP	DIE OR CHIP		20	85 Cel	3-STATE	2MX2	2M	-40 Cel		UPPER	HARDWARE	X-XUUC-N	1	3.6 V	100000 Write/Erase Cycles	133 MHz		SPI		4194304 bit	2.7 V	ALSO OPERATES WITH 1.65V MIN @108MHZ FREQ				NOR TYPE	.000019 Amp		3.3
AT45DB021E-DWF	Renesas Electronics	FLASH	INDUSTRIAL		DIE	UNSPECIFIED	UNSPECIFIED	YES	1	CMOS	NO LEAD	SERIAL	SYNCHRONOUS		2097152 words	1.8	1	UNCASED CHIP				85 Cel		2MX1	2M	-40 Cel	NICKEL PALLADIUM GOLD	UPPER		X-XUUC-N	1	3.6 V		70 MHz				2097152 bit	1.65 V		e4						2.7
AT25DN011-DWF	Renesas Electronics	FLASH	INDUSTRIAL		DIE	UNSPECIFIED	UNSPECIFIED	YES	1	CMOS	NO LEAD	SERIAL	SYNCHRONOUS		1048576 words	3	1	UNCASED CHIP				85 Cel		1MX1	1M	-40 Cel		UPPER		X-XUUC-N		3.6 V		104 MHz				1048576 bit	2.3 V								3
AT25DF021A-DWF	Renesas Electronics	FLASH	INDUSTRIAL		DIE	UNSPECIFIED	UNSPECIFIED	YES	1	CMOS	NO LEAD	SERIAL	SYNCHRONOUS		2097152 words	1.8	1	UNCASED CHIP				85 Cel		2MX1	2M	-40 Cel	Nickel/Palladium/Gold (Ni/Pd/Au)	UPPER		X-XUUC-N		3.6 V		104 MHz				2097152 bit	1.65 V	IT ALSO OPERATES AT 2.3V MIN	e4			NOR TYPE			1.8
AT25QL641-DWF	Renesas Electronics	FLASH	INDUSTRIAL		DIE	UNSPECIFIED	UNSPECIFIED	YES	1	CMOS	NO LEAD	SERIAL	SYNCHRONOUS		67108864 words	1.8	1	UNCASED CHIP				85 Cel		64MX1	64M	-40 Cel		UPPER		X-XUUC-N		2 V		104 MHz				67108864 bit	1.7 V								1.8
AT25DF041B-DWF	Renesas Electronics	FLASH	INDUSTRIAL		DIE	UNSPECIFIED	UNSPECIFIED	YES	1	CMOS	NO LEAD	SERIAL	SYNCHRONOUS		4194304 words	1.8	1	UNCASED CHIP				85 Cel		4MX1	4M	-40 Cel	Nickel/Palladium/Gold (Ni/Pd/Au)	UPPER		X-XUUC-N		3.6 V		104 MHz				4194304 bit	1.65 V		e4			NOR TYPE			1.8
AT45DB321E-DWF	Renesas Electronics	FLASH	INDUSTRIAL		DIE	UNSPECIFIED	UNSPECIFIED	YES	1	CMOS	NO LEAD	SERIAL	SYNCHRONOUS		33554432 words	3	1	UNCASED CHIP				85 Cel		32MX1	32M	-40 Cel		UPPER		X-XUUC-N		3.6 V		85 MHz				33554432 bit	2.3 V			NOT SPECIFIED	NOT SPECIFIED				3
AT25DF021A-DWFHT	Renesas Electronics	FLASH	AUTOMOTIVE		DIE	UNSPECIFIED	UNSPECIFIED	YES	1	CMOS	NO LEAD	SERIAL	SYNCHRONOUS		2097152 words	1.8	1	UNCASED CHIP				125 Cel		2MX1	2M	-40 Cel		UPPER		X-XUUC-N	1	3.6 V		85 MHz				2097152 bit	1.7 V					NOR TYPE			1.8
AT25SF081B-DWF	Renesas Electronics	FLASH	INDUSTRIAL		DIE	UNSPECIFIED	UNSPECIFIED	NO	1	CMOS	NO LEAD	SERIAL	SYNCHRONOUS	16 mA	1048576 words	3	8	UNCASED CHIP	DIE OR CHIP		20	85 Cel	3-STATE	1MX8	1M	-40 Cel		UPPER	HARDWARE/SOFTWARE	X-XUUC-N	1	3.6 V	100000 Write/Erase Cycles	108 MHz		SPI		8388608 bit	2.5 V					NOR TYPE	.00003 Amp		3
AT45DB641E-DWF	Renesas Electronics	FLASH	INDUSTRIAL		DIE	UNSPECIFIED	UNSPECIFIED	YES	1	CMOS	NO LEAD	SERIAL	SYNCHRONOUS		67108864 words	3	1	UNCASED CHIP				85 Cel		64MX1	64M	-40 Cel		UPPER		X-XUUC-N		3.6 V		85 MHz				67108864 bit	2.3 V	IT ALSO OPERATES AT FREQUENCY 50 MHZ AT 1.7 TO 3.6 V SUPPLY VOLTAGE		NOT SPECIFIED	NOT SPECIFIED				1.8
AT25SF641-DWF	Renesas Electronics	FLASH	INDUSTRIAL		DIE	UNSPECIFIED	UNSPECIFIED	YES	1	CMOS	NO LEAD	SERIAL	SYNCHRONOUS		67108864 words	1.8	1	UNCASED CHIP				85 Cel		64MX1	64M	-40 Cel		UPPER		X-XUUC-N		1.95 V		104 MHz				67108864 bit	1.65 V								2.7
AT25FF161A-DWF	Renesas Electronics	FLASH	INDUSTRIAL	8	DIE	UNSPECIFIED	PLASTIC/EPOXY	YES	1	CMOS	NO LEAD	SERIAL	SYNCHRONOUS	17.5 mA	2097152 words	1.8	8	UNCASED CHIP	DIE OR CHIP		20	85 Cel	3-STATE	2MX8	2M	-40 Cel		UPPER	HARDWARE/SOFTWARE	X-XUUC-N	1	3.6 V	100000 Write/Erase Cycles	133 MHz		SPI		16777216 bit	1.65 V					NOR TYPE	.00005 Amp		1.8
AT25DF011-DWFHT	Renesas Electronics	FLASH	AUTOMOTIVE		DIE	UNSPECIFIED	UNSPECIFIED	YES	1	CMOS	NO LEAD	SERIAL	SYNCHRONOUS		1048576 words		1	UNCASED CHIP				125 Cel		1MX1	1M	-40 Cel		UPPER		X-XUUC-N	1	3.6 V	20000 Write/Erase Cycles	104 MHz				1048576 bit	1.7 V						.00006 Amp		1.8
AT25SF641B-DWF	Renesas Electronics	FLASH	INDUSTRIAL	8	DIE	UNSPECIFIED	PLASTIC/EPOXY	YES	1	CMOS	NO LEAD	SERIAL	SYNCHRONOUS	19 mA	67108864 words	3	1	UNCASED CHIP			20	85 Cel	3-STATE	64MX1	64M	-40 Cel		UNSPECIFIED	HARDWARE/SOFTWARE	X-XUUC-N	1	3.6 V	100000 Write/Erase Cycles	104 MHz		SPI		67108864 bit	2.7 V					NOR TYPE	.000025 Amp		3
AT25QL128A-DWF	Renesas Electronics	FLASH	INDUSTRIAL		DIE	UNSPECIFIED	UNSPECIFIED	YES	1	CMOS	NO LEAD	SERIAL	SYNCHRONOUS		134217728 words	1.8	1	UNCASED CHIP				85 Cel		128MX1	128M	-40 Cel		UPPER		X-XUUC-N		2 V		104 MHz				134217728 bit	1.7 V								1.8
AT45DB321F-DWF	Renesas Electronics	FLASH 1.8V PROM	INDUSTRIAL		DIE	UNSPECIFIED	UNSPECIFIED	YES	1	CMOS	NO LEAD	SERIAL	SYNCHRONOUS		33554432 words	1.8	1	UNCASED CHIP				85 Cel		32MX1	32M	-40 Cel		UPPER		X-XUUC-N		3.6 V		104 MHz				33554432 bit	1.65 V
AT45DB322F-DWF	Renesas Electronics	FLASH 1.8V PROM	INDUSTRIAL		DIE	UNSPECIFIED	UNSPECIFIED	YES	1	CMOS	NO LEAD	SERIAL	SYNCHRONOUS		33554432 words	1.8	1	UNCASED CHIP				85 Cel		32MX1	32M	-40 Cel		UPPER		X-XUUC-N		3.6 V		104 MHz				33554432 bit	1.65 V
AT25FF041A-DWF	Renesas Electronics	FLASH	INDUSTRIAL		DIE	UNSPECIFIED	UNSPECIFIED	YES	1	CMOS	NO LEAD	SERIAL	SYNCHRONOUS	17.5 mA	2097152 words	1.8	2	UNCASED CHIP			20	85 Cel	3-STATE	2MX2	2M	-40 Cel		UPPER	HARDWARE/SOFTWARE	X-XUUC-N		3.6 V	100000 Write/Erase Cycles	133 MHz		SPI		4194304 bit	1.65 V					NOR TYPE	.00005 Amp		1.8
AT25QL321-DWF	Renesas Electronics	FLASH	INDUSTRIAL		DIE	UNSPECIFIED	UNSPECIFIED	YES	1	CMOS	NO LEAD	SERIAL	SYNCHRONOUS		33554432 words	1.8	1	UNCASED CHIP				85 Cel		32MX1	32M	-40 Cel		UPPER		X-XUUC-N		2 V		104 MHz				33554432 bit	1.7 V								1.8
AT25SF321B-DWF	Renesas Electronics	FLASH	INDUSTRIAL		DIE	UNSPECIFIED	UNSPECIFIED	NO	1	CMOS	NO LEAD	SERIAL	SYNCHRONOUS	17 mA	4194304 words	3	8	UNCASED CHIP	DIE OR CHIP		20	85 Cel	3-STATE	4MX8	4M	-40 Cel	NICKEL PALLADIUM GOLD	UPPER	HARDWARE/SOFTWARE	X-XUUC-N	1	3.6 V	100000 Write/Erase Cycles	108 MHz		SPI		33554432 bit	2.7 V		e4		260	NOR TYPE	.000025 Amp		3
AT25QF641B-DWF	Renesas Electronics	FLASH	INDUSTRIAL		DIE	UNSPECIFIED	PLASTIC/EPOXY	YES	1	CMOS		SERIAL	SYNCHRONOUS	19 mA	4194304 words	3	16	UNCASED CHIP	DIE OR CHIP		20	85 Cel	3-STATE	4MX16	4M	-40 Cel		UPPER	HARDWARE/SOFTWARE	X-XUUC-N	1	3.6 V	100000 Write/Erase Cycles	104 MHz		SPI		67108864 bit	2.7 V					NOR TYPE	.000025 Amp		3
AT25FF081A-DWF	Renesas Electronics	FLASH	INDUSTRIAL			UNSPECIFIED	UNSPECIFIED	YES	1	CMOS	NO LEAD	SERIAL	SYNCHRONOUS	17.5 mA	2097152 words	3.3	4				20	85 Cel	3-STATE	2MX4	2M	-40 Cel		UPPER	HARDWARE	X-XUUC-N		3.6 V	100000 Write/Erase Cycles	133 MHz		SPI		8388608 bit	2.7 V	ALSO OPERATES AT 108MHZ @1.65V MINIMUM SUPPLY				NOR TYPE	.000019 Amp		3.3
AT45DB041E-DWF	Renesas Electronics	FLASH			DIE	UNSPECIFIED	PLASTIC/EPOXY	YES	1	CMOS	NO LEAD	SERIAL	SYNCHRONOUS	16 mA	4194304 words	3	1				20		3-STATE	4MX1	4M				HARDWARE/SOFTWARE	X-XUUC-N	1	3.6 V	100000 Write/Erase Cycles	85 MHz		SPI		4194304 bit	2.3 V					NOR TYPE	.00004 Amp		3
AT45DB081E-DWF	Renesas Electronics	FLASH	INDUSTRIAL		DIE	UNSPECIFIED	PLASTIC/EPOXY	YES	1	CMOS	NO LEAD	SERIAL	SYNCHRONOUS	16 mA	1048576 words	3	8	UNCASED CHIP	DIE OR CHIP		20	85 Cel	3-STATE	1MX8	1M	-40 Cel		UPPER	HARDWARE/SOFTWARE	X-XUUC-N	1	3.6 V	100000 Write/Erase Cycles	133 MHz		SPI		8388608 bit	2.3 V	IT ALSO OPERATES WITH 1.7V MIN WITH 85 MHZ FREQUENCY;256K-BIT EXTRA FLASH AVAILABLE				NOR TYPE	.00004 Amp		3
AT25DF011-DWF	Renesas Electronics	FLASH	INDUSTRIAL		DIE	UNSPECIFIED	UNSPECIFIED	YES	1	CMOS	NO LEAD	SERIAL	SYNCHRONOUS		1048576 words	1.8	1	UNCASED CHIP				85 Cel		1MX1	1M	-40 Cel	Matte Tin (Sn)	UPPER		X-XUUC-N		3.6 V		104 MHz				1048576 bit	1.7 V		e3			NOR TYPE			1.8
AT25SF041-DWF	Renesas Electronics	FLASH			DIE	UNSPECIFIED	PLASTIC/EPOXY	YES	1	CMOS	NO LEAD	SERIAL	SYNCHRONOUS	16 mA	4194304 words	3	1	UNCASED CHIP	DIE OR CHIP		20	85 Cel	3-STATE	4MX1	4M	-40 Cel		UPPER	HARDWARE/SOFTWARE	X-XUUC-N		3.6 V		104 MHz		SPI		4194304 bit	2.5 V					NOR TYPE	.000025 Amp		3
K8A6415ETB-SE7B0	Samsung	FLASH	OTHER		BGA	UNSPECIFIED	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS		4194304 words	1.8	16	GRID ARRAY				85 Cel		4MX16	4M	-25 Cel	TIN SILVER COPPER	BOTTOM		X-PBGA-B	3	1.95 V			Not Qualified			67108864 bit	1.7 V	SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE	e1		260			90 ns	1.8
K8A5615ETA-DC7C0	Samsung	FLASH	COMMERCIAL		BGA	UNSPECIFIED	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS		16777216 words	1.8	16	GRID ARRAY				70 Cel		16MX16	16M	0 Cel	TIN SILVER COPPER	BOTTOM		X-PBGA-B	2	1.95 V			Not Qualified		TOP	268435456 bit	1.7 V	SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE	e1			NOR TYPE		80 ns	1.8
K9S3208V0A-SSB0	Samsung	FLASH CARD	COMMERCIAL	22		UNSPECIFIED	UNSPECIFIED	NO	1	CMOS	UNSPECIFIED	PARALLEL	ASYNCHRONOUS		4194304 words	3.3	8	MICROELECTRONIC ASSEMBLY				55 Cel		4MX8	4M	0 Cel		UNSPECIFIED		X-XXMA-X22		3.6 V			Not Qualified			33554432 bit	3 V							35 ns	3
K9S1608V0A-SSB00	Samsung	FLASH CARD	COMMERCIAL	22		UNSPECIFIED	UNSPECIFIED	NO	1	CMOS	UNSPECIFIED	PARALLEL	ASYNCHRONOUS		2097152 words	3.3	8	MICROELECTRONIC ASSEMBLY				55 Cel		2MX8	2M	0 Cel		UNSPECIFIED		X-XXMA-X22		3.6 V			Not Qualified			16777216 bit	3 V							45 ns	2.7
K8A5615EBA-DC7C0	Samsung	FLASH	COMMERCIAL		BGA	UNSPECIFIED	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS		16777216 words	1.8	16	GRID ARRAY				70 Cel		16MX16	16M	0 Cel	TIN SILVER COPPER	BOTTOM		X-PBGA-B	2	1.95 V			Not Qualified		BOTTOM	268435456 bit	1.7 V	SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE	e1			NOR TYPE		80 ns	1.8
K9S2808V0M-SSB0	Samsung	FLASH CARD	COMMERCIAL	22		UNSPECIFIED	UNSPECIFIED	NO	1	CMOS	UNSPECIFIED	PARALLEL	ASYNCHRONOUS		16777216 words	3.3	8	MICROELECTRONIC ASSEMBLY			10	55 Cel		16MX8	16M	0 Cel		UNSPECIFIED		X-XXMA-X22		3.6 V			Not Qualified			134217728 bit	2.7 V	HARDWARE DATA PROTECTION; DATA RETENTION 10 YEARS						35 ns	2.7
SMFV008A	Samsung	FLASH CARD	COMMERCIAL	22		UNSPECIFIED	UNSPECIFIED	NO	1	CMOS	UNSPECIFIED	PARALLEL	ASYNCHRONOUS		8388608 words	3.3	8	MICROELECTRONIC ASSEMBLY			10	55 Cel		8MX8	8M	0 Cel		UNSPECIFIED		X-XXMA-X22		3.6 V			Not Qualified			67108864 bit	2.7 V	HARDWARE DATA PROTECTION; DATA RETENTION 10 YEARS						35 ns	2.7
SMFN004	Samsung	FLASH CARD	COMMERCIAL	22		UNSPECIFIED	UNSPECIFIED	NO	1	CMOS	UNSPECIFIED	PARALLEL	ASYNCHRONOUS		4194304 words	5	8	MICROELECTRONIC ASSEMBLY				55 Cel	3-STATE	4MX8	4M	0 Cel		UNSPECIFIED		X-XXMA-X22		5.5 V			Not Qualified			33554432 bit	4.5 V								5
K8A6415ETB-FC7B0	Samsung	FLASH	COMMERCIAL		BGA	UNSPECIFIED	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS		4194304 words	1.8	16	GRID ARRAY				70 Cel		4MX16	4M	0 Cel	TIN LEAD	BOTTOM		X-PBGA-B	3	1.95 V			Not Qualified			67108864 bit	1.7 V	SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE	e0		240			90 ns	1.8
K8A6415ETB-DE7C0	Samsung	FLASH	OTHER		BGA	UNSPECIFIED	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS		4194304 words	1.8	16	GRID ARRAY				85 Cel		4MX16	4M	-25 Cel	TIN SILVER COPPER	BOTTOM		X-PBGA-B	3	1.95 V			Not Qualified			67108864 bit	1.7 V	SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE	e1		260			80 ns	1.8
K8A6415ETB-DC7B0	Samsung	FLASH	COMMERCIAL		BGA	UNSPECIFIED	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS		4194304 words	1.8	16	GRID ARRAY				70 Cel		4MX16	4M	0 Cel	TIN SILVER COPPER	BOTTOM		X-PBGA-B	3	1.95 V			Not Qualified			67108864 bit	1.7 V	SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE	e1		260			90 ns	1.8
K8A5615EBA-DC7B0	Samsung	FLASH	COMMERCIAL		BGA	UNSPECIFIED	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS		16777216 words	1.8	16	GRID ARRAY				70 Cel		16MX16	16M	0 Cel	TIN SILVER COPPER	BOTTOM		X-PBGA-B	2	1.95 V			Not Qualified		BOTTOM	268435456 bit	1.7 V	SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE	e1			NOR TYPE		90 ns	1.8
K9S6408V0M-SSB0	Samsung	FLASH CARD	COMMERCIAL	22		UNSPECIFIED	UNSPECIFIED	NO	1	CMOS	UNSPECIFIED	PARALLEL	ASYNCHRONOUS		8388608 words	3.3	8	MICROELECTRONIC ASSEMBLY			10	55 Cel		8MX8	8M	0 Cel		UNSPECIFIED		X-XXMA-X22		3.6 V			Not Qualified			67108864 bit	2.7 V	HARDWARE DATA PROTECTION; DATA RETENTION 10 YEARS							2.7

Flash Memory

Flash memory is a type of non-volatile computer memory that is commonly used in digital devices such as USB drives, solid-state drives, and digital cameras. It is a type of EEPROM (Electrically Erasable Programmable Read-Only Memory) that allows data to be erased and reprogrammed in blocks instead of one byte at a time. Flash memory uses a floating gate transistor to store data, which allows it to retain information even when the power is turned off.

Flash memory is widely used in digital devices because of its high capacity, small size, and fast access times. It is also more durable than other types of memory, such as hard disk drives, because it has no moving parts. This makes it ideal for use in portable devices that may be subject to physical shock or vibration.

There are two types of flash memory: NOR flash and NAND flash. NOR flash is faster than NAND flash, but it has lower density and higher cost per bit. NOR flash is typically used for code storage, such as firmware or boot code, because it provides faster access times. NAND flash has higher density and lower cost per bit, which makes it ideal for data storage applications.

Flash memory has a limited lifespan, as it can only be erased and reprogrammed a limited number of times. This is because the process of erasing and reprogramming the memory causes wear and tear on the floating gate transistor. However, modern flash memory devices have a sophisticated wear-leveling algorithm that distributes writes evenly across the memory, which extends the lifespan of the device.