UNSPECIFIED Flash Memory 207

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Part RoHS Manufacturer Memory IC Type Temperature Grade No. of Terminals Package Code Package Shape Package Body Material Surface Mount No. of Functions Technology Screening Level Terminal Form Parallel or Serial Operating Mode Sector Size (Words) Maximum Supply Current No. of Words Input/Output Type Nominal Supply Voltage / Vsup (V) Mixed Memory Type Toggle Bit Power Supplies (V) Memory Width Package Style (Meter) Package Equivalence Code Alternate Memory Width Sub-Category Minimum Data Retention Time Terminal Pitch Maximum Operating Temperature Reverse Pinout Output Characteristics Organization No. of Words Code Minimum Operating Temperature No. of Sectors/Size Command User Interface Terminal Finish Ready or Busy Terminal Position No. of Ports Write Protection JESD-30 Code Moisture Sensitivity Level (MSL) Maximum Supply Voltage (Vsup) Maximum Seated Height Endurance Maximum Clock Frequency (fCLK) Width Qualification Maximum Write Cycle Time (tWC) Serial Bus Type Boot Block Memory Density Minimum Supply Voltage (Vsup) Additional Features Page Size (words) JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Type Maximum Standby Current Length Common Flash Interface Maximum Access Time Programming Voltage (V) Data Polling

SDSDQAF3-008G-I

Western Digital

FLASH CARD

DIE

UNSPECIFIED

UNSPECIFIED

YES

1

CMOS

NO LEAD

ASYNCHRONOUS

8589934592 words

8

UNCASED CHIP

85 Cel

8GX8

8G

-25 Cel

UPPER

X-XUUC-N

68719476736 bit

MLC NAND TYPE

SDSDQAF3-064G-I

Western Digital

FLASH CARD

DIE

UNSPECIFIED

UNSPECIFIED

YES

1

CMOS

NO LEAD

ASYNCHRONOUS

68719476736 words

8

UNCASED CHIP

85 Cel

64GX8

64G

-25 Cel

UPPER

X-XUUC-N

549755813888 bit

MLC NAND TYPE

SDSDQED-008G-XI

Western Digital

FLASH CARD

DIE

UNSPECIFIED

UNSPECIFIED

YES

1

CMOS

NO LEAD

ASYNCHRONOUS

8589934592 words

8

UNCASED CHIP

85 Cel

8GX8

8G

-40 Cel

UPPER

X-XUUC-N

68719476736 bit

SLC NAND TYPE

SDSDQAF3-008G-XI

Western Digital

FLASH CARD

DIE

UNSPECIFIED

UNSPECIFIED

YES

1

CMOS

NO LEAD

ASYNCHRONOUS

8589934592 words

8

UNCASED CHIP

85 Cel

8GX8

8G

-40 Cel

UPPER

X-XUUC-N

68719476736 bit

MLC NAND TYPE

SDSDAF3-008G-I

Western Digital

FLASH CARD

OTHER

DIE

UNSPECIFIED

UNSPECIFIED

YES

1

CMOS

NO LEAD

ASYNCHRONOUS

8589934592 words

8

UNCASED CHIP

85 Cel

8GX8

8G

-25 Cel

UPPER

X-XUUC-N

3.6 V

68719476736 bit

2.7 V

2.7

AT25XE321D-DWF

Renesas Electronics

FLASH

INDUSTRIAL

8

DIE

UNSPECIFIED

UNSPECIFIED

YES

1

CMOS

NO LEAD

SERIAL

SYNCHRONOUS

16.5 mA

2097152 words

3.3

16

UNCASED CHIP

20

85 Cel

3-STATE

2MX16

2M

-40 Cel

UPPER

HARDWARE/SOFTWARE

X-XUUC-N

1

3.6 V

100000 Write/Erase Cycles

133 MHz

SPI

33554432 bit

2.7 V

ALSO OPERATES AT 108MHZ @1.65V MINIMUM SUPPLY

NOR TYPE

.00005 Amp

1.8

SDSDQAF3-016G-I

Western Digital

FLASH CARD

DIE

UNSPECIFIED

UNSPECIFIED

YES

1

CMOS

NO LEAD

ASYNCHRONOUS

17179869184 words

8

UNCASED CHIP

85 Cel

16GX8

16G

-25 Cel

UPPER

X-XUUC-N

137438953472 bit

MLC NAND TYPE

SDSDQAF3-032G-I

Western Digital

FLASH CARD

DIE

UNSPECIFIED

UNSPECIFIED

YES

1

CMOS

NO LEAD

ASYNCHRONOUS

34359738368 words

8

UNCASED CHIP

85 Cel

32GX8

32G

-25 Cel

UPPER

X-XUUC-N

274877906944 bit

MLC NAND TYPE

MT29F8G08ADBFAH4-AAT:FTR

Micron Technology

FLASH

BGA

UNSPECIFIED

UNSPECIFIED

YES

1

CMOS

BALL

ASYNCHRONOUS

1073741824 words

8

GRID ARRAY

105 Cel

1GX8

1G

-40 Cel

BOTTOM

X-PBGA-B

8589934592 bit

NOT SPECIFIED

NOT SPECIFIED

SLC NAND TYPE

MT29F8G08ADBFAH4-AAT:F

Micron Technology

FLASH

INDUSTRIAL

BGA

UNSPECIFIED

PLASTIC/EPOXY

YES

1

CMOS

BALL

ASYNCHRONOUS

1073741824 words

1.8

8

GRID ARRAY

105 Cel

1GX8

1G

-40 Cel

BOTTOM

X-PBGA-B

8589934592 bit

NOT SPECIFIED

NOT SPECIFIED

SLC NAND TYPE

1.8

AT45DCB008D

Atmel

FLASH CARD

INDUSTRIAL

7

DIE

UNSPECIFIED

UNSPECIFIED

YES

1

CMOS

NO LEAD

SERIAL

SYNCHRONOUS

8388608 words

3

8

UNCASED CHIP

85 Cel

8MX8

8M

-40 Cel

UPPER

X-XUUC-N7

3.6 V

66 MHz

Not Qualified

67108864 bit

2.7 V

NOR TYPE

2.7

AT45DCB002

Atmel

FLASH CARD

INDUSTRIAL

7

UNSPECIFIED

UNSPECIFIED

NO

1

CMOS

UNSPECIFIED

SERIAL

SYNCHRONOUS

16777216 words

3

1

MICROELECTRONIC ASSEMBLY

85 Cel

16MX1

16M

-40 Cel

UNSPECIFIED

X-XXMA-X7

3.6 V

20 MHz

Not Qualified

16777216 bit

2.7 V

NOT SPECIFIED

NOT SPECIFIED

2.7

CMS68F2MB-250

Texas Instruments

FLASH CARD

COMMERCIAL

68

UNSPECIFIED

UNSPECIFIED

NO

1

CMOS

UNSPECIFIED

PARALLEL

ASYNCHRONOUS

80 mA

2097152 words

5

NO

5

8

MICROELECTRONIC ASSEMBLY

CARD68

16

Flash Memories

55 Cel

2MX8

2M

0 Cel

UNSPECIFIED

HARDWARE

X-XXMA-X68

5.25 V

Not Qualified

16777216 bit

4.75 V

NOR TYPE

.02 Amp

250 ns

12

NO

CMS68F256-250

Texas Instruments

FLASH CARD

COMMERCIAL

68

UNSPECIFIED

UNSPECIFIED

NO

1

CMOS

UNSPECIFIED

PARALLEL

ASYNCHRONOUS

80 mA

262144 words

5

NO

5

8

MICROELECTRONIC ASSEMBLY

CARD68

16

Flash Memories

55 Cel

256KX8

256K

0 Cel

UNSPECIFIED

HARDWARE

X-XXMA-X68

5.25 V

Not Qualified

2097152 bit

4.75 V

NOR TYPE

.02 Amp

250 ns

12

NO

CMS68F1MB-250

Texas Instruments

FLASH CARD

COMMERCIAL

68

UNSPECIFIED

UNSPECIFIED

NO

1

CMOS

UNSPECIFIED

PARALLEL

ASYNCHRONOUS

80 mA

1048576 words

5

NO

5

8

MICROELECTRONIC ASSEMBLY

CARD68

16

Flash Memories

55 Cel

1MX8

1M

0 Cel

UNSPECIFIED

HARDWARE

X-XXMA-X68

5.25 V

Not Qualified

8388608 bit

4.75 V

NOR TYPE

.02 Amp

250 ns

12

YES

CMS68F512-250

Texas Instruments

FLASH CARD

COMMERCIAL

68

UNSPECIFIED

UNSPECIFIED

NO

1

CMOS

UNSPECIFIED

PARALLEL

ASYNCHRONOUS

80 mA

524288 words

5

NO

5

8

MICROELECTRONIC ASSEMBLY

CARD68

16

Flash Memories

55 Cel

512KX8

512K

0 Cel

UNSPECIFIED

HARDWARE

X-XXMA-X68

5.25 V

Not Qualified

4194304 bit

4.75 V

NOR TYPE

.02 Amp

250 ns

12

NO

NAND01GR3A2B

STMicroelectronics

FLASH

DIE

UNSPECIFIED

UNSPECIFIED

YES

1

CMOS

NO LEAD

PARALLEL

ASYNCHRONOUS

134217728 words

1.8

8

UNCASED CHIP

128MX8

128M

UPPER

X-XUUC-N

1.95 V

Not Qualified

1073741824 bit

1.7 V

SLC NAND TYPE

35 ns

1.8

NAND01GR3A2A

STMicroelectronics

FLASH

DIE

UNSPECIFIED

UNSPECIFIED

YES

1

CMOS

NO LEAD

PARALLEL

ASYNCHRONOUS

134217728 words

1.8

8

UNCASED CHIP

128MX8

128M

UPPER

X-XUUC-N

1.95 V

Not Qualified

1073741824 bit

1.7 V

SLC NAND TYPE

35 ns

1.8

NAND01GR4A2B

STMicroelectronics

FLASH

DIE

UNSPECIFIED

UNSPECIFIED

YES

1

CMOS

NO LEAD

PARALLEL

ASYNCHRONOUS

67108864 words

1.8

16

UNCASED CHIP

64MX16

64M

UPPER

X-XUUC-N

1.95 V

Not Qualified

1073741824 bit

1.7 V

SLC NAND TYPE

35 ns

1.8

NAND01GW3A2B

STMicroelectronics

FLASH

DIE

UNSPECIFIED

UNSPECIFIED

YES

1

CMOS

NO LEAD

PARALLEL

ASYNCHRONOUS

134217728 words

3

8

UNCASED CHIP

128MX8

128M

UPPER

X-XUUC-N

3.6 V

Not Qualified

1073741824 bit

2.7 V

SLC NAND TYPE

35 ns

3

NAND01GW3A2BE06

STMicroelectronics

FLASH

INDUSTRIAL

DIE

UNSPECIFIED

UNSPECIFIED

YES

1

CMOS

NO LEAD

PARALLEL

ASYNCHRONOUS

16K

20 mA

134217728 words

3

NO

3/3.3

8

UNCASED CHIP

DIE OR CHIP

Flash Memories

85 Cel

128MX8

128M

-40 Cel

8K

YES

YES

UPPER

X-XUUC-N

3.6 V

Not Qualified

1073741824 bit

2.7 V

512

SLC NAND TYPE

.0001 Amp

15000 ns

3

NO

NAND01GW4A2C

STMicroelectronics

FLASH

DIE

UNSPECIFIED

UNSPECIFIED

YES

1

CMOS

NO LEAD

PARALLEL

ASYNCHRONOUS

67108864 words

3

16

UNCASED CHIP

64MX16

64M

UPPER

X-XUUC-N

3.6 V

Not Qualified

1073741824 bit

2.7 V

SLC NAND TYPE

35 ns

3

NAND01GW3A2A

STMicroelectronics

FLASH

DIE

UNSPECIFIED

UNSPECIFIED

YES

1

CMOS

NO LEAD

PARALLEL

ASYNCHRONOUS

134217728 words

3

8

UNCASED CHIP

128MX8

128M

UPPER

X-XUUC-N

3.6 V

Not Qualified

1073741824 bit

2.7 V

SLC NAND TYPE

35 ns

3

NAND01GW4A2A

STMicroelectronics

FLASH

DIE

UNSPECIFIED

UNSPECIFIED

YES

1

CMOS

NO LEAD

PARALLEL

ASYNCHRONOUS

67108864 words

3

16

UNCASED CHIP

64MX16

64M

UPPER

X-XUUC-N

3.6 V

Not Qualified

1073741824 bit

2.7 V

SLC NAND TYPE

35 ns

3

NAND01GW3A2C

STMicroelectronics

FLASH

DIE

UNSPECIFIED

UNSPECIFIED

YES

1

CMOS

NO LEAD

PARALLEL

ASYNCHRONOUS

134217728 words

3

8

UNCASED CHIP

128MX8

128M

UPPER

X-XUUC-N

3.6 V

Not Qualified

1073741824 bit

2.7 V

SLC NAND TYPE

35 ns

3

NAND01GR3A2C

STMicroelectronics

FLASH

DIE

UNSPECIFIED

UNSPECIFIED

YES

1

CMOS

NO LEAD

PARALLEL

ASYNCHRONOUS

134217728 words

1.8

8

UNCASED CHIP

128MX8

128M

UPPER

X-XUUC-N

1.95 V

Not Qualified

1073741824 bit

1.7 V

SLC NAND TYPE

35 ns

1.8

NAND01GW4A2BKGD

STMicroelectronics

FLASH

INDUSTRIAL

DIE

UNSPECIFIED

UNSPECIFIED

YES

1

CMOS

NO LEAD

PARALLEL

ASYNCHRONOUS

67108864 words

3

16

UNCASED CHIP

85 Cel

64MX16

64M

-40 Cel

UPPER

X-XUUC-N

3.6 V

Not Qualified

1073741824 bit

2.7 V

SLC NAND TYPE

15000 ns

3

NAND01GW4A2B

STMicroelectronics

FLASH

DIE

UNSPECIFIED

UNSPECIFIED

YES

1

CMOS

NO LEAD

PARALLEL

ASYNCHRONOUS

67108864 words

3

16

UNCASED CHIP

64MX16

64M

UPPER

X-XUUC-N

3.6 V

Not Qualified

1073741824 bit

2.7 V

SLC NAND TYPE

35 ns

3

NAND01GW4A2BE06

STMicroelectronics

FLASH

INDUSTRIAL

DIE

UNSPECIFIED

UNSPECIFIED

YES

1

CMOS

NO LEAD

PARALLEL

ASYNCHRONOUS

8K

20 mA

67108864 words

3

NO

3.3

16

UNCASED CHIP

DIE OR CHIP

Flash Memories

85 Cel

64MX16

64M

-40 Cel

8K

YES

YES

UPPER

X-XUUC-N

3.6 V

Not Qualified

1073741824 bit

2.7 V

256

SLC NAND TYPE

.0001 Amp

15000 ns

3

NO

NAND01GR4A2C

STMicroelectronics

FLASH

DIE

UNSPECIFIED

UNSPECIFIED

YES

1

CMOS

NO LEAD

PARALLEL

ASYNCHRONOUS

67108864 words

1.8

16

UNCASED CHIP

64MX16

64M

UPPER

X-XUUC-N

1.95 V

Not Qualified

1073741824 bit

1.7 V

SLC NAND TYPE

35 ns

1.8

NAND01GW3A2BKGD

STMicroelectronics

FLASH

INDUSTRIAL

DIE

UNSPECIFIED

UNSPECIFIED

YES

1

CMOS

NO LEAD

PARALLEL

ASYNCHRONOUS

134217728 words

3

8

UNCASED CHIP

85 Cel

128MX8

128M

-40 Cel

UPPER

X-XUUC-N

3.6 V

Not Qualified

1073741824 bit

2.7 V

SLC NAND TYPE

15000 ns

3

NAND01GR4A2A

STMicroelectronics

FLASH

DIE

UNSPECIFIED

UNSPECIFIED

YES

1

CMOS

NO LEAD

PARALLEL

ASYNCHRONOUS

67108864 words

1.8

16

UNCASED CHIP

64MX16

64M

UPPER

X-XUUC-N

1.95 V

Not Qualified

1073741824 bit

1.7 V

SLC NAND TYPE

35 ns

1.8

S29GL128P11WGI014

Infineon Technologies

FLASH

INDUSTRIAL

DIE

UNSPECIFIED

UNSPECIFIED

YES

1

CMOS

NO LEAD

PARALLEL

ASYNCHRONOUS

8388608 words

3

16

UNCASED CHIP

85 Cel

8MX16

8M

-40 Cel

UPPER

X-XUUC-N

3.6 V

Not Qualified

134217728 bit

2.7 V

NOR TYPE

110 ns

3

S29GL01GS11FAI010

Infineon Technologies

FLASH

INDUSTRIAL

BGA

UNSPECIFIED

PLASTIC/EPOXY

YES

1

CMOS

BALL

ASYNCHRONOUS

134217728 words

3

8

GRID ARRAY

85 Cel

128MX8

128M

-40 Cel

BOTTOM

X-PBGA-B

3.6 V

1073741824 bit

2.7 V

110 ns

3

S29GL128P11WGI017

Infineon Technologies

FLASH

INDUSTRIAL

DIE

UNSPECIFIED

UNSPECIFIED

YES

1

CMOS

NO LEAD

PARALLEL

ASYNCHRONOUS

8388608 words

3

16

UNCASED CHIP

85 Cel

8MX16

8M

-40 Cel

UPPER

X-XUUC-N

3.6 V

Not Qualified

134217728 bit

2.7 V

NOR TYPE

110 ns

3

THNCF016MAA

Toshiba

FLASH CARD

COMMERCIAL

50

UNSPECIFIED

UNSPECIFIED

NO

1

CMOS

UNSPECIFIED

PARALLEL

ASYNCHRONOUS

8388608 words

3.3

16

MICROELECTRONIC ASSEMBLY

60 Cel

8MX16

8M

0 Cel

UNSPECIFIED

X-XXMA-X50

5.5 V

Not Qualified

134217728 bit

3 V

100 ns

3.3

THNAT128MBAI

Toshiba

FLASH CARD

INDUSTRIAL

68

UNSPECIFIED

UNSPECIFIED

NO

1

CMOS

UNSPECIFIED

PARALLEL

ASYNCHRONOUS

67108864 words

3.3

16

MICROELECTRONIC ASSEMBLY

85 Cel

64MX16

64M

-40 Cel

UNSPECIFIED

X-XXMA-X68

3.6 V

Not Qualified

1073741824 bit

3 V

CAN ALSO OPERATE AT 5V SUPPLY

250 ns

3

THNCF064MAA

Toshiba

FLASH CARD

COMMERCIAL

50

UNSPECIFIED

UNSPECIFIED

NO

1

CMOS

UNSPECIFIED

PARALLEL

ASYNCHRONOUS

33554432 words

3.3

16

MICROELECTRONIC ASSEMBLY

60 Cel

32MX16

32M

0 Cel

UNSPECIFIED

X-XXMA-X50

5.5 V

Not Qualified

536870912 bit

3 V

100 ns

3.3

THNAT192MBAI

Toshiba

FLASH CARD

INDUSTRIAL

68

UNSPECIFIED

UNSPECIFIED

NO

1

CMOS

UNSPECIFIED

PARALLEL

ASYNCHRONOUS

100663296 words

3.3

16

MICROELECTRONIC ASSEMBLY

85 Cel

96MX16

96M

-40 Cel

UNSPECIFIED

X-XXMA-X68

3.6 V

Not Qualified

1610612736 bit

3 V

CAN ALSO OPERATE AT 5V SUPPLY

250 ns

3

THNCF096MAA

Toshiba

FLASH CARD

COMMERCIAL

50

UNSPECIFIED

UNSPECIFIED

NO

1

CMOS

UNSPECIFIED

PARALLEL

ASYNCHRONOUS

50331648 words

3.3

16

MICROELECTRONIC ASSEMBLY

60 Cel

48MX16

48M

0 Cel

UNSPECIFIED

X-XXMA-X50

5.5 V

Not Qualified

805306368 bit

3 V

100 ns

3.3

THNCF128MAA

Toshiba

FLASH CARD

COMMERCIAL

50

UNSPECIFIED

UNSPECIFIED

NO

1

CMOS

UNSPECIFIED

PARALLEL

ASYNCHRONOUS

67108864 words

3.3

16

MICROELECTRONIC ASSEMBLY

60 Cel

64MX16

64M

0 Cel

UNSPECIFIED

X-XXMA-X50

5.5 V

Not Qualified

1073741824 bit

3 V

100 ns

3.3

THNCF512MAA

Toshiba

FLASH CARD

COMMERCIAL

50

UNSPECIFIED

UNSPECIFIED

NO

1

CMOS

UNSPECIFIED

PARALLEL

ASYNCHRONOUS

268435456 words

3.3

16

MICROELECTRONIC ASSEMBLY

60 Cel

256MX16

256M

0 Cel

UNSPECIFIED

X-XXMA-X50

5.5 V

Not Qualified

4294967296 bit

3 V

100 ns

3.3

THNCF192MAA

Toshiba

FLASH CARD

COMMERCIAL

50

UNSPECIFIED

UNSPECIFIED

NO

1

CMOS

UNSPECIFIED

PARALLEL

ASYNCHRONOUS

100663296 words

3.3

16

MICROELECTRONIC ASSEMBLY

60 Cel

96MX16

96M

0 Cel

UNSPECIFIED

X-XXMA-X50

5.5 V

Not Qualified

1610612736 bit

3 V

100 ns

3.3

THNCF320MAA

Toshiba

FLASH CARD

COMMERCIAL

50

UNSPECIFIED

UNSPECIFIED

NO

1

CMOS

UNSPECIFIED

PARALLEL

ASYNCHRONOUS

167772160 words

3.3

16

MICROELECTRONIC ASSEMBLY

60 Cel

160MX16

160M

0 Cel

UNSPECIFIED

X-XXMA-X50

5.5 V

Not Qualified

2684354560 bit

3 V

100 ns

3.3

THNAT016MBAI

Toshiba

FLASH CARD

INDUSTRIAL

68

UNSPECIFIED

UNSPECIFIED

NO

1

CMOS

UNSPECIFIED

PARALLEL

ASYNCHRONOUS

8388608 words

3.3

16

MICROELECTRONIC ASSEMBLY

85 Cel

8MX16

8M

-40 Cel

UNSPECIFIED

X-XXMA-X68

3.6 V

Not Qualified

134217728 bit

3 V

CAN ALSO OPERATE AT 5V SUPPLY

250 ns

3

THNCF384MAA

Toshiba

FLASH CARD

COMMERCIAL

50

UNSPECIFIED

UNSPECIFIED

NO

1

CMOS

UNSPECIFIED

PARALLEL

ASYNCHRONOUS

201326592 words

3.3

16

MICROELECTRONIC ASSEMBLY

60 Cel

192MX16

192M

0 Cel

UNSPECIFIED

X-XXMA-X50

5.5 V

Not Qualified

3221225472 bit

3 V

100 ns

3.3

THNAT256MBAI

Toshiba

FLASH CARD

INDUSTRIAL

68

UNSPECIFIED

UNSPECIFIED

NO

1

CMOS

UNSPECIFIED

PARALLEL

ASYNCHRONOUS

134217728 words

3.3

16

MICROELECTRONIC ASSEMBLY

85 Cel

128MX16

128M

-40 Cel

UNSPECIFIED

X-XXMA-X68

3.6 V

Not Qualified

2147483648 bit

3 V

CAN ALSO OPERATE AT 5V SUPPLY

250 ns

3

THNAT320MBAI

Toshiba

FLASH CARD

INDUSTRIAL

68

UNSPECIFIED

UNSPECIFIED

NO

1

CMOS

UNSPECIFIED

PARALLEL

ASYNCHRONOUS

167772160 words

3.3

16

MICROELECTRONIC ASSEMBLY

85 Cel

160MX16

160M

-40 Cel

UNSPECIFIED

X-XXMA-X68

3.6 V

Not Qualified

2684354560 bit

3 V

CAN ALSO OPERATE AT 5V SUPPLY

250 ns

3

Flash Memory

Flash memory is a type of non-volatile computer memory that is commonly used in digital devices such as USB drives, solid-state drives, and digital cameras. It is a type of EEPROM (Electrically Erasable Programmable Read-Only Memory) that allows data to be erased and reprogrammed in blocks instead of one byte at a time. Flash memory uses a floating gate transistor to store data, which allows it to retain information even when the power is turned off.

Flash memory is widely used in digital devices because of its high capacity, small size, and fast access times. It is also more durable than other types of memory, such as hard disk drives, because it has no moving parts. This makes it ideal for use in portable devices that may be subject to physical shock or vibration.

There are two types of flash memory: NOR flash and NAND flash. NOR flash is faster than NAND flash, but it has lower density and higher cost per bit. NOR flash is typically used for code storage, such as firmware or boot code, because it provides faster access times. NAND flash has higher density and lower cost per bit, which makes it ideal for data storage applications.

Flash memory has a limited lifespan, as it can only be erased and reprogrammed a limited number of times. This is because the process of erasing and reprogramming the memory causes wear and tear on the floating gate transistor. However, modern flash memory devices have a sophisticated wear-leveling algorithm that distributes writes evenly across the memory, which extends the lifespan of the device.