UNSPECIFIED Flash Memory 207

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Terminal Form	Parallel or Serial	Operating Mode	No. of Words	Nominal Supply Voltage / Vsup (V)	Memory Width	Package Style (Meter)	Minimum Data Retention Time	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	Terminal Finish	Terminal Position	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Qualification	Boot Block	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Peak Reflow Temperature (C)	Type	Maximum Access Time	Programming Voltage (V)
SMFV032	Samsung	FLASH CARD	COMMERCIAL	22		UNSPECIFIED	UNSPECIFIED	NO	1	CMOS	UNSPECIFIED	PARALLEL	ASYNCHRONOUS	33554432 words	3.3	8	MICROELECTRONIC ASSEMBLY	10	55 Cel		32MX8	32M	0 Cel		UNSPECIFIED	X-XXMA-X22		3.6 V	Not Qualified		268435456 bit	2.7 V	HARDWARE DATA PROTECTION; DATA RETENTION 10 YEARS; 1M PROGRAM/ERASE CYCLES				35 ns	3
K9S2808V0A-SSB0	Samsung	FLASH CARD	COMMERCIAL	22		UNSPECIFIED	UNSPECIFIED	NO	1	CMOS	UNSPECIFIED	PARALLEL	ASYNCHRONOUS	16777216 words	3.3	8	MICROELECTRONIC ASSEMBLY		55 Cel		16MX8	16M	0 Cel		UNSPECIFIED	X-XXMA-X22		3.6 V	Not Qualified		134217728 bit	2.7 V					35 ns	2.7
SMFV002	Samsung	FLASH CARD	COMMERCIAL	22		UNSPECIFIED	UNSPECIFIED	NO	1	CMOS	UNSPECIFIED	PARALLEL	ASYNCHRONOUS	2097152 words	3.3	8	MICROELECTRONIC ASSEMBLY	10	55 Cel		2MX8	2M	0 Cel		UNSPECIFIED	X-XXMA-X22		3.6 V	Not Qualified		16777216 bit	3 V	HARDWARE DATA PROTECTION; 1M PROGRAM/ERASE CYCLES; DATA RETENTION 10 YEARS				45 ns	3
K8A6415ETB-SE7C0	Samsung	FLASH	OTHER		BGA	UNSPECIFIED	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	4194304 words	1.8	16	GRID ARRAY		85 Cel		4MX16	4M	-25 Cel	TIN SILVER COPPER	BOTTOM	X-PBGA-B	3	1.95 V	Not Qualified		67108864 bit	1.7 V	SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE	e1	260		80 ns	1.8
K9D1208V0M-SSB0	Samsung	FLASH CARD	COMMERCIAL	22		UNSPECIFIED	UNSPECIFIED	NO	1	CMOS	UNSPECIFIED	PARALLEL	ASYNCHRONOUS	67108864 words	3.3	8	MICROELECTRONIC ASSEMBLY	10	55 Cel		64MX8	64M	0 Cel		UNSPECIFIED	X-XXMA-X22		3.6 V	Not Qualified		536870912 bit	2.7 V	HARDWARE DATA PROTECTION; DATA RETENTION 10 YEARS				35 ns	2.7
K9S2808V0B-SSB0	Samsung	FLASH CARD	COMMERCIAL	22		UNSPECIFIED	UNSPECIFIED	NO	1	CMOS	UNSPECIFIED	PARALLEL	ASYNCHRONOUS	16777216 words	3.3	8	MICROELECTRONIC ASSEMBLY		55 Cel		16MX8	16M	0 Cel		UNSPECIFIED	X-XXMA-X22		3.6 V	Not Qualified		134217728 bit	2.7 V					35 ns	2.7
K9S5608V0A-SSB0	Samsung	FLASH CARD	COMMERCIAL	22		UNSPECIFIED	UNSPECIFIED	NO	1	CMOS	UNSPECIFIED	PARALLEL	ASYNCHRONOUS	33554432 words	3.3	8	MICROELECTRONIC ASSEMBLY		55 Cel		32MX8	32M	0 Cel		UNSPECIFIED	X-XXMA-X22		3.6 V	Not Qualified		268435456 bit	2.7 V					35 ns	2.7
K8A5615EBA-FC7B0	Samsung	FLASH	COMMERCIAL		BGA	UNSPECIFIED	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	16777216 words	1.8	16	GRID ARRAY		70 Cel		16MX16	16M	0 Cel	TIN LEAD	BOTTOM	X-PBGA-B		1.95 V	Not Qualified	BOTTOM	268435456 bit	1.7 V	SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE	e0		NOR TYPE	90 ns	1.8
K9Q1G08V0A-SSB0	Samsung	FLASH CARD	COMMERCIAL	22		UNSPECIFIED	UNSPECIFIED	NO	1	CMOS	UNSPECIFIED	PARALLEL	ASYNCHRONOUS	134217728 words	3.3	8	MICROELECTRONIC ASSEMBLY		55 Cel		128MX8	128M	0 Cel		UNSPECIFIED	X-XXMA-X22		3.6 V	Not Qualified		1073741824 bit	2.7 V					45 ns	2.7
K8A5615ETA-DE7B0	Samsung	FLASH	OTHER		BGA	UNSPECIFIED	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	16777216 words	1.8	16	GRID ARRAY		85 Cel		16MX16	16M	-25 Cel	TIN SILVER COPPER	BOTTOM	X-PBGA-B	2	1.95 V	Not Qualified	TOP	268435456 bit	1.7 V	SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE	e1		NOR TYPE	90 ns	1.8
K8A5615EBA-DE7C0	Samsung	FLASH	OTHER		BGA	UNSPECIFIED	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	16777216 words	1.8	16	GRID ARRAY		85 Cel		16MX16	16M	-25 Cel	TIN SILVER COPPER	BOTTOM	X-PBGA-B	2	1.95 V	Not Qualified	BOTTOM	268435456 bit	1.7 V	SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE	e1		NOR TYPE	80 ns	1.8
K9S6408V0M-SSB00	Samsung	FLASH CARD	COMMERCIAL	22		UNSPECIFIED	UNSPECIFIED	NO	1	CMOS	UNSPECIFIED	PARALLEL	ASYNCHRONOUS	8388608 words	3.3	8	MICROELECTRONIC ASSEMBLY		55 Cel		8MX8	8M	0 Cel		UNSPECIFIED	X-XXMA-X22		3.6 V	Not Qualified		67108864 bit	2.7 V					35 ns	2.7
K8A5615EBA-FE7B0	Samsung	FLASH	OTHER		BGA	UNSPECIFIED	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	16777216 words	1.8	16	GRID ARRAY		85 Cel		16MX16	16M	-25 Cel	TIN LEAD	BOTTOM	X-PBGA-B		1.95 V	Not Qualified	BOTTOM	268435456 bit	1.7 V	SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE	e0		NOR TYPE	90 ns	1.8
K8A5615EBA-FE7C0	Samsung	FLASH	OTHER		BGA	UNSPECIFIED	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	16777216 words	1.8	16	GRID ARRAY		85 Cel		16MX16	16M	-25 Cel	TIN LEAD	BOTTOM	X-PBGA-B		1.95 V	Not Qualified	BOTTOM	268435456 bit	1.7 V	SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE	e0		NOR TYPE	80 ns	1.8
K8A6415ETB-DE7B0	Samsung	FLASH	OTHER		BGA	UNSPECIFIED	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	4194304 words	1.8	16	GRID ARRAY		85 Cel		4MX16	4M	-25 Cel	TIN SILVER COPPER	BOTTOM	X-PBGA-B	3	1.95 V	Not Qualified		67108864 bit	1.7 V	SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE	e1	260		90 ns	1.8
K9S6408V0A-SSB0	Samsung	FLASH CARD	COMMERCIAL	22		UNSPECIFIED	UNSPECIFIED	NO	1	CMOS	UNSPECIFIED	PARALLEL	ASYNCHRONOUS	8388608 words	3.3	8	MICROELECTRONIC ASSEMBLY	10	55 Cel		8MX8	8M	0 Cel		UNSPECIFIED	X-XXMA-X22		3.6 V	Not Qualified		67108864 bit	2.7 V	HARDWARE DATA PROTECTION; DATA RETENTION 10 YEARS				35 ns	2.7
K9S6408V0B-SSB0	Samsung	FLASH CARD	COMMERCIAL	22		UNSPECIFIED	UNSPECIFIED	NO	1	CMOS	UNSPECIFIED	PARALLEL	ASYNCHRONOUS	8388608 words	3.3	8	MICROELECTRONIC ASSEMBLY		55 Cel		8MX8	8M	0 Cel		UNSPECIFIED	X-XXMA-X22		3.6 V	Not Qualified		67108864 bit	2.7 V					35 ns	2.7
K9D1208V0A-SSB0	Samsung	FLASH CARD	COMMERCIAL	22		UNSPECIFIED	UNSPECIFIED	NO	1	CMOS	UNSPECIFIED	PARALLEL	ASYNCHRONOUS	67108864 words	3.3	8	MICROELECTRONIC ASSEMBLY		55 Cel		64MX8	64M	0 Cel		UNSPECIFIED	X-XXMA-X22		3.6 V	Not Qualified		536870912 bit	2.7 V					35 ns	2.7
K8A6415ETB-FC7C0	Samsung	FLASH	COMMERCIAL		BGA	UNSPECIFIED	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	4194304 words	1.8	16	GRID ARRAY		70 Cel		4MX16	4M	0 Cel	TIN LEAD	BOTTOM	X-PBGA-B	3	1.95 V	Not Qualified		67108864 bit	1.7 V	SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE	e0	240		80 ns	1.8
K8A5615EBA-DE7B0	Samsung	FLASH	OTHER		BGA	UNSPECIFIED	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	16777216 words	1.8	16	GRID ARRAY		85 Cel		16MX16	16M	-25 Cel	TIN SILVER COPPER	BOTTOM	X-PBGA-B	2	1.95 V	Not Qualified	BOTTOM	268435456 bit	1.7 V	SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE	e1		NOR TYPE	90 ns	1.8
K8A5615ETA-FE7C0	Samsung	FLASH	OTHER		BGA	UNSPECIFIED	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	16777216 words	1.8	16	GRID ARRAY		85 Cel		16MX16	16M	-25 Cel	TIN LEAD	BOTTOM	X-PBGA-B		1.95 V	Not Qualified	TOP	268435456 bit	1.7 V	SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE	e0		NOR TYPE	80 ns	1.8
K9S1608V0A-SSB0	Samsung	FLASH CARD	COMMERCIAL	22		UNSPECIFIED	UNSPECIFIED	NO	1	CMOS	UNSPECIFIED	PARALLEL	ASYNCHRONOUS	2097152 words	3.3	8	MICROELECTRONIC ASSEMBLY		55 Cel		2MX8	2M	0 Cel		UNSPECIFIED	X-XXMA-X22		3.6 V	Not Qualified		16777216 bit	3 V					45 ns	3
K8A5615ETA-FE7B0	Samsung	FLASH	OTHER		BGA	UNSPECIFIED	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	16777216 words	1.8	16	GRID ARRAY		85 Cel		16MX16	16M	-25 Cel	TIN LEAD	BOTTOM	X-PBGA-B		1.95 V	Not Qualified	TOP	268435456 bit	1.7 V	SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE	e0		NOR TYPE	90 ns	1.8
K8A5615ETA-FC7C0	Samsung	FLASH	COMMERCIAL		BGA	UNSPECIFIED	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	16777216 words	1.8	16	GRID ARRAY		70 Cel		16MX16	16M	0 Cel	TIN LEAD	BOTTOM	X-PBGA-B		1.95 V	Not Qualified	TOP	268435456 bit	1.7 V	SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE	e0		NOR TYPE	80 ns	1.8
K8A6415ETB-SC7B0	Samsung	FLASH	COMMERCIAL		BGA	UNSPECIFIED	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	4194304 words	1.8	16	GRID ARRAY		70 Cel		4MX16	4M	0 Cel	TIN SILVER COPPER	BOTTOM	X-PBGA-B	3	1.95 V	Not Qualified		67108864 bit	1.7 V	SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE	e1	260		90 ns	1.8
K8A6415ETB-FE7B0	Samsung	FLASH	OTHER		BGA	UNSPECIFIED	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	4194304 words	1.8	16	GRID ARRAY		85 Cel		4MX16	4M	-25 Cel	TIN LEAD	BOTTOM	X-PBGA-B	3	1.95 V	Not Qualified		67108864 bit	1.7 V	SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE	e0	240		90 ns	1.8
K8A6415ETB-SC7C0	Samsung	FLASH	COMMERCIAL		BGA	UNSPECIFIED	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	4194304 words	1.8	16	GRID ARRAY		70 Cel		4MX16	4M	0 Cel	TIN SILVER COPPER	BOTTOM	X-PBGA-B	3	1.95 V	Not Qualified		67108864 bit	1.7 V	SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE	e1	260		80 ns	1.8
K8A5615ETA-FC7B0	Samsung	FLASH	COMMERCIAL		BGA	UNSPECIFIED	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	16777216 words	1.8	16	GRID ARRAY		70 Cel		16MX16	16M	0 Cel	TIN LEAD	BOTTOM	X-PBGA-B		1.95 V	Not Qualified	TOP	268435456 bit	1.7 V	SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE	e0		NOR TYPE	90 ns	1.8
K8A6415ETB-DC7C0	Samsung	FLASH	COMMERCIAL		BGA	UNSPECIFIED	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	4194304 words	1.8	16	GRID ARRAY		70 Cel		4MX16	4M	0 Cel	TIN SILVER COPPER	BOTTOM	X-PBGA-B	3	1.95 V	Not Qualified		67108864 bit	1.7 V	SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE	e1	260		80 ns	1.8
K8A5615EBA-FC7C0	Samsung	FLASH	COMMERCIAL		BGA	UNSPECIFIED	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	16777216 words	1.8	16	GRID ARRAY		70 Cel		16MX16	16M	0 Cel	TIN LEAD	BOTTOM	X-PBGA-B		1.95 V	Not Qualified	BOTTOM	268435456 bit	1.7 V	SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE	e0		NOR TYPE	80 ns	1.8
K9S1608V0B-SSB0	Samsung	FLASH CARD	COMMERCIAL	22		UNSPECIFIED	UNSPECIFIED	NO	1	CMOS	UNSPECIFIED	PARALLEL	ASYNCHRONOUS	2097152 words	3.3	8	MICROELECTRONIC ASSEMBLY		55 Cel		2MX8	2M	0 Cel		UNSPECIFIED	X-XXMA-X22		3.6 V	Not Qualified		16777216 bit	3 V					45 ns	3
SMFV008	Samsung	FLASH CARD	COMMERCIAL	22		UNSPECIFIED	UNSPECIFIED	NO	1	CMOS	UNSPECIFIED	PARALLEL	ASYNCHRONOUS	8388608 words	3.3	8	MICROELECTRONIC ASSEMBLY	10	55 Cel	3-STATE	8MX8	8M	0 Cel		UNSPECIFIED	X-XXMA-X22		3.6 V	Not Qualified		67108864 bit	2.7 V	HARDWARE DATA PROTECTION; 1M PROGRAM/ERASE CYCLES; DATA RETENTION 10 YEARS; BLOCK ERASE					2.7
SMFN002	Samsung	FLASH CARD	COMMERCIAL	22		UNSPECIFIED	UNSPECIFIED	NO	1	CMOS	UNSPECIFIED	PARALLEL	ASYNCHRONOUS	2097152 words	5	8	MICROELECTRONIC ASSEMBLY	10	55 Cel		2MX8	2M	0 Cel		UNSPECIFIED	X-XXMA-X22		5.5 V	Not Qualified		16777216 bit	4.5 V	HARDWARE DATA PROTECTION; DATA RETENTION 10 YEARS; 1M PROGRAM/ERASE CYCLES				45 ns	5
K8A5615ETA-DC7B0	Samsung	FLASH	COMMERCIAL		BGA	UNSPECIFIED	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	16777216 words	1.8	16	GRID ARRAY		70 Cel		16MX16	16M	0 Cel	TIN SILVER COPPER	BOTTOM	X-PBGA-B	2	1.95 V	Not Qualified	TOP	268435456 bit	1.7 V	SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE	e1		NOR TYPE	90 ns	1.8
K9D5608V0M-SSB0	Samsung	FLASH CARD	COMMERCIAL	22		UNSPECIFIED	UNSPECIFIED	NO	1	CMOS	UNSPECIFIED	PARALLEL	ASYNCHRONOUS	33554432 words	3.3	8	MICROELECTRONIC ASSEMBLY		55 Cel		32MX8	32M	0 Cel		UNSPECIFIED	X-XXMA-X22		3.6 V	Not Qualified		268435456 bit	2.7 V					35 ns	2.7
K8A6415ETB-FE7C0	Samsung	FLASH	OTHER		BGA	UNSPECIFIED	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	4194304 words	1.8	16	GRID ARRAY		85 Cel		4MX16	4M	-25 Cel	TIN LEAD	BOTTOM	X-PBGA-B	3	1.95 V	Not Qualified		67108864 bit	1.7 V	SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE	e0	240		80 ns	1.8
K9S3208V0B-SSB0	Samsung	FLASH CARD	COMMERCIAL	22		UNSPECIFIED	UNSPECIFIED	NO	1	CMOS	UNSPECIFIED	PARALLEL	ASYNCHRONOUS	4194304 words	3.3	8	MICROELECTRONIC ASSEMBLY		55 Cel		4MX8	4M	0 Cel		UNSPECIFIED	X-XXMA-X22		3.6 V	Not Qualified		33554432 bit	3 V					35 ns	3
SMFV002A	Samsung	FLASH CARD	COMMERCIAL	22		UNSPECIFIED	UNSPECIFIED	NO	1	CMOS	UNSPECIFIED	PARALLEL	ASYNCHRONOUS	2097152 words	3.3	8	MICROELECTRONIC ASSEMBLY		55 Cel		2MX8	2M	0 Cel		UNSPECIFIED	X-XXMA-X22		3.6 V	Not Qualified		16777216 bit	3 V					45 ns	3
K9S5608V0M-SSB0	Samsung	FLASH CARD	COMMERCIAL	22		UNSPECIFIED	UNSPECIFIED	NO	1	CMOS	UNSPECIFIED	PARALLEL	ASYNCHRONOUS	33554432 words	3.3	8	MICROELECTRONIC ASSEMBLY		55 Cel		32MX8	32M	0 Cel		UNSPECIFIED	X-XXMA-X22		3.6 V	Not Qualified		268435456 bit	2.7 V					35 ns	2.7
SMFV004	Samsung	FLASH CARD	COMMERCIAL	22		UNSPECIFIED	UNSPECIFIED	NO	1	CMOS	UNSPECIFIED	PARALLEL	ASYNCHRONOUS	4194304 words	3.3	8	MICROELECTRONIC ASSEMBLY		55 Cel	3-STATE	4MX8	4M	0 Cel		UNSPECIFIED	X-XXMA-X22		3.6 V	Not Qualified		33554432 bit	3 V						3
K8A5615ETA-DE7C0	Samsung	FLASH	OTHER		BGA	UNSPECIFIED	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	16777216 words	1.8	16	GRID ARRAY		85 Cel		16MX16	16M	-25 Cel	TIN SILVER COPPER	BOTTOM	X-PBGA-B	2	1.95 V	Not Qualified	TOP	268435456 bit	1.7 V	SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE	e1		NOR TYPE	80 ns	1.8
MTCF004A-CAB	Micron Technology	FLASH CARD	COMMERCIAL	50		UNSPECIFIED	UNSPECIFIED	NO	1	CMOS	UNSPECIFIED	PARALLEL	ASYNCHRONOUS	2097152 words	3.3	16	MICROELECTRONIC ASSEMBLY		60 Cel		2MX16	2M	0 Cel		UNSPECIFIED	X-XXMA-X50		3.465 V	Not Qualified		33554432 bit	3.135 V	CAN ALSO OPERATE WITH 5V SUPPLY			NOR TYPE		3.3
MTCF004A	Micron Technology	FLASH CARD	COMMERCIAL	50		UNSPECIFIED	UNSPECIFIED	NO	1	CMOS	UNSPECIFIED			4194304 words	3.3	8	MICROELECTRONIC ASSEMBLY		60 Cel		4MX8	4M	0 Cel		UNSPECIFIED	X-XXMA-X50		3.6 V	Not Qualified		33554432 bit	3 V	ALSO BE OPERATED WITH 4.5-5.5V SUPPLY			NOR TYPE		3
MQCF015A	Micron Technology	FLASH CARD	COMMERCIAL	50		UNSPECIFIED	UNSPECIFIED	NO	1	CMOS	UNSPECIFIED			15728640 words	3.3	8	MICROELECTRONIC ASSEMBLY		60 Cel		15MX8	15M	0 Cel		UNSPECIFIED	X-XXMA-X50		3.6 V	Not Qualified		125829120 bit	3 V	CAN ALSO BE OPERATED FROM 4.5 TO 5.5 VOLTS			NOR TYPE		3
MQCF010A	Micron Technology	FLASH CARD	COMMERCIAL	50		UNSPECIFIED	UNSPECIFIED	NO	1	CMOS	UNSPECIFIED			10485760 words	3.3	8	MICROELECTRONIC ASSEMBLY		60 Cel		10MX8	10M	0 Cel		UNSPECIFIED	X-XXMA-X50		3.6 V	Not Qualified		83886080 bit	3 V	CAN ALSO BE OPERATED FROM 4.5 TO 5.5 VOLTS			NOR TYPE		3
MQAT010A	Micron Technology	FLASH CARD	COMMERCIAL	50		UNSPECIFIED	UNSPECIFIED	NO	1	CMOS	UNSPECIFIED	PARALLEL		10485760 words	3.3	8	MICROELECTRONIC ASSEMBLY		60 Cel		10MX8	10M	0 Cel		UNSPECIFIED	X-XXMA-X50		3.6 V	Not Qualified		83886080 bit	3 V	ALSO WORKS WITH 5V VCC			NOR TYPE		3
MTCF016A-XXX	Micron Technology	FLASH CARD	COMMERCIAL	50		UNSPECIFIED	UNSPECIFIED	NO	1	CMOS	UNSPECIFIED	PARALLEL	ASYNCHRONOUS	8388608 words	3.3	16	MICROELECTRONIC ASSEMBLY		60 Cel		8MX16	8M	0 Cel		UNSPECIFIED	X-XXMA-X50		3.465 V	Not Qualified		134217728 bit	3.135 V	CAN ALSO OPERATE WITH 5V SUPPLY			NOR TYPE		3.3
MTCF008A	Micron Technology	FLASH CARD	COMMERCIAL	50		UNSPECIFIED	UNSPECIFIED	NO	1	CMOS	UNSPECIFIED			8388608 words	3.3	8	MICROELECTRONIC ASSEMBLY		60 Cel		8MX8	8M	0 Cel		UNSPECIFIED	X-XXMA-X50		3.6 V	Not Qualified		67108864 bit	3 V	ALSO BE OPERATED WITH 4.5-5.5V SUPPLY			NOR TYPE		3

Flash Memory

Flash memory is a type of non-volatile computer memory that is commonly used in digital devices such as USB drives, solid-state drives, and digital cameras. It is a type of EEPROM (Electrically Erasable Programmable Read-Only Memory) that allows data to be erased and reprogrammed in blocks instead of one byte at a time. Flash memory uses a floating gate transistor to store data, which allows it to retain information even when the power is turned off.

Flash memory is widely used in digital devices because of its high capacity, small size, and fast access times. It is also more durable than other types of memory, such as hard disk drives, because it has no moving parts. This makes it ideal for use in portable devices that may be subject to physical shock or vibration.

There are two types of flash memory: NOR flash and NAND flash. NOR flash is faster than NAND flash, but it has lower density and higher cost per bit. NOR flash is typically used for code storage, such as firmware or boot code, because it provides faster access times. NAND flash has higher density and lower cost per bit, which makes it ideal for data storage applications.

Flash memory has a limited lifespan, as it can only be erased and reprogrammed a limited number of times. This is because the process of erasing and reprogramming the memory causes wear and tear on the floating gate transistor. However, modern flash memory devices have a sophisticated wear-leveling algorithm that distributes writes evenly across the memory, which extends the lifespan of the device.