AUTOMOTIVE Flash Memory 2,400+

Reset All

Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Terminal Form	Parallel or Serial	Operating Mode	Sector Size (Words)	Maximum Supply Current	No. of Words	Nominal Supply Voltage / Vsup (V)	Toggle Bit	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Alternate Memory Width	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Reverse Pinout	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	No. of Sectors/Size	Command User Interface	Terminal Finish	Ready or Busy	Terminal Position	JESD-30 Code	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Endurance	Width	Qualification	Boot Block	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	Page Size (words)	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Type	Maximum Standby Current	Length	Common Flash Interface	Maximum Access Time	Programming Voltage (V)	Data Polling
TMS28F040-17C4DDQ4	Texas Instruments	FLASH	AUTOMOTIVE	40	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	PARALLEL		32K	40 mA	524288 words	5	YES	5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP40,.8,20		Flash Memories	.5 mm	125 Cel			512KX8	512K	-40 Cel	16	YES			DUAL	R-PDSO-G40			10000 Write/Erase Cycles				4194304 bit					NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.0001 Amp			170 ns		YES
TMS28F210-17C3DBWQ	Texas Instruments	FLASH	AUTOMOTIVE	40	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		50 mA	65536 words	5	NO	5	16	SMALL OUTLINE, THIN PROFILE	TSSOP40,.56,20		Flash Memories	.5 mm	125 Cel		3-STATE	64KX16	64K	-40 Cel		YES			DUAL	R-PDSO-G40	5.5 V	1.2 mm	1000 Write/Erase Cycles	10 mm	Not Qualified		1048576 bit	4.5 V				NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.0001 Amp	12.4 mm		170 ns	12	NO
TMS28F800ZB80CDCDQ	Texas Instruments	FLASH	AUTOMOTIVE	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS			1048576 words	5			8	SMALL OUTLINE, THIN PROFILE				.5 mm	125 Cel			1MX8	1M	-40 Cel					DUAL	R-PDSO-G48	5.5 V	1.2 mm		12 mm	Not Qualified	BOTTOM	8388608 bit	4.5 V	CONFG AS 512K X 16; BOTTOM BOOT BLOCK					NOR TYPE		18.4 mm		80 ns	3
TMS28F200BZB80CDBJQ	Texas Instruments	FLASH	AUTOMOTIVE	44	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,96K,128K	65 mA	262144 words	5	NO	5	8	SMALL OUTLINE	SOP44,.63	8	Flash Memories	1.27 mm	125 Cel			256KX8	256K	-40 Cel	1,2,1,1	YES			DUAL	R-PDSO-G44	5.5 V	2.63 mm	100000 Write/Erase Cycles	13.3 mm	Not Qualified	BOTTOM	2097152 bit	4.5 V	100000 PROGRAM/ERASE CYCLES; TTL COMPATIBLE I/O; BOTTOM BOOT BLOCK			NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.000008 Amp	28.2 mm		80 ns	12	NO
TMS28F008SZB-80BDCDQ	Texas Instruments	FLASH	AUTOMOTIVE	40	TSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS			1048576 words	5			8	SMALL OUTLINE, THIN PROFILE				1.27 mm	125 Cel			1MX8	1M	-40 Cel					DUAL	R-PDSO-G40	5.5 V	1.2 mm		10 mm	Not Qualified	BOTTOM	8388608 bit	4.5 V	10000 PROGRAM/ERASE CYCLES; TTL COMPATIBLE I/O; BOTTOM BOOT BLOCK					NOR TYPE		18.4 mm		80 ns	3
TMS28F008AET70BDCDQ	Texas Instruments	FLASH	AUTOMOTIVE	40	TSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS			1048576 words	3			8	SMALL OUTLINE, THIN PROFILE				1.27 mm	125 Cel			1MX8	1M	-40 Cel					DUAL	R-PDSO-G40	3.6 V	1.2 mm		10 mm	Not Qualified	TOP	8388608 bit	2.7 V	10000 PROGRAM/ERASE CYCLES; USER SELECTABLE TOP BOOT BLOCK					NOR TYPE		18.4 mm		100 ns	3
TMS28F200AFB90CDBJQ	Texas Instruments	FLASH	AUTOMOTIVE	44	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,96K,128K	65 mA	262144 words	5	NO	5	8	SMALL OUTLINE	SOP44,.63	8	Flash Memories	1.27 mm	125 Cel		3-STATE	256KX8	256K	-40 Cel	1,2,1,1	YES			DUAL	R-PDSO-G44	5.5 V	2.63 mm	100000 Write/Erase Cycles	13.3 mm	Not Qualified	BOTTOM	2097152 bit	4.5 V	CAN BE CONFG AS 128K X 16; BOTTOM BOOT BLOCK			NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.00003 Amp	28.2 mm		90 ns	5	NO
TMS28F004AFB80BDBJQ	Texas Instruments	FLASH	AUTOMOTIVE	44	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	MOS	GULL WING	PARALLEL	ASYNCHRONOUS			524288 words	5			8	SMALL OUTLINE				1.27 mm	125 Cel		3-STATE	512KX8	512K	-40 Cel					DUAL	R-PDSO-G44	5.5 V	2.63 mm		13.3 mm	Not Qualified	BOTTOM	4194304 bit	4.5 V	USER-SELECTABLE 5V OR 12 V VPP					NOR TYPE		28.2 mm		80 ns	5
TMS29F400T-120CDCDQ	Texas Instruments	FLASH	AUTOMOTIVE	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	60 mA	524288 words	5	YES	5	8	SMALL OUTLINE, THIN PROFILE	TSSOP48,.8,20	8	Flash Memories	.5 mm	125 Cel		3-STATE	512KX8	512K	-40 Cel	1,2,1,7	YES		YES	DUAL	R-PDSO-G48	5.5 V	1.2 mm	100000 Write/Erase Cycles	12 mm	Not Qualified	TOP	4194304 bit	4.5 V	CAN ALSO BE CONFIGURED AS 256K X 16			NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.000005 Amp	18.4 mm		120 ns	5	YES
TMS28F512A-17C3NQ	Texas Instruments	FLASH	AUTOMOTIVE	32	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		30 mA	65536 words	5	NO	5	8	IN-LINE	DIP32,.6		Flash Memories	2.54 mm	125 Cel		3-STATE	64KX8	64K	-40 Cel		YES			DUAL	R-PDIP-T32	5.5 V	5.08 mm	1000 Write/Erase Cycles	15.24 mm	Not Qualified		524288 bit	4.5 V				NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.0001 Amp	41.4 mm		170 ns	12	NO
TMS28F512A-12C4DDQ	Texas Instruments	FLASH	AUTOMOTIVE	32	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		30 mA	65536 words	5	NO	5	8	SMALL OUTLINE, THIN PROFILE	TSSOP32,.8,20		Flash Memories	.5 mm	125 Cel		3-STATE	64KX8	64K	-40 Cel		YES			DUAL	R-PDSO-G32	5.5 V	1.2 mm	10000 Write/Erase Cycles	8 mm	Not Qualified		524288 bit	4.5 V				NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.0001 Amp	18.415 mm		120 ns	12	NO
TMS28F800ALYB10CDCDQ	Texas Instruments	FLASH	AUTOMOTIVE	40	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS			1048576 words	5			8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH				.5 mm	125 Cel			1MX8	1M	-40 Cel					DUAL	R-PDSO-G40	5.5 V	1.2 mm		10 mm		BOTTOM	8388608 bit	4.5 V	BOTTOM BOOT BLOCK							18.4 mm		100 ns	5
TMS28F800AVYB70CDBJQ	Texas Instruments	FLASH	AUTOMOTIVE	44	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS			1048576 words	3			8	SMALL OUTLINE				1.27 mm	125 Cel			1MX8	1M	-40 Cel					DUAL	R-PDSO-G44	3.6 V	2.625 mm		13.3 mm		BOTTOM	8388608 bit	2.7 V	BOTTOM BOOT BLOCK							28.2 mm		70 ns	3
TMS28F800AEYT10CDBJQ	Texas Instruments	FLASH	AUTOMOTIVE	44	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS			1048576 words	5			8	SMALL OUTLINE				1.27 mm	125 Cel			1MX8	1M	-40 Cel					DUAL	R-PDSO-G44	5.5 V	2.625 mm		13.3 mm		TOP	8388608 bit	4.5 V	TOP BOOT BLOCK							28.2 mm		100 ns	5
TMS28F010A-12C4DUQ	Texas Instruments	FLASH	AUTOMOTIVE	32	TSOP1-R	RECTANGULAR	PLASTIC/EPOXY	YES	1	MOS	GULL WING	PARALLEL	ASYNCHRONOUS		30 mA	131072 words	5	NO	5	8	SMALL OUTLINE, THIN PROFILE	TSSOP32,.8,20		Flash Memories	.5 mm	125 Cel	YES	3-STATE	128KX8	128K	-40 Cel		YES			DUAL	R-PDSO-G32	5.5 V	1.2 mm	10000 Write/Erase Cycles	8 mm	Not Qualified		1048576 bit	4.5 V	10000 PROGRAM/ERASE CYCLES			NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.0001 Amp	18.415 mm		120 ns	12	NO
TMS28F200AFB70CDCDQ	Texas Instruments	FLASH	AUTOMOTIVE	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS			131072 words	5			16	SMALL OUTLINE, THIN PROFILE		8		.5 mm	125 Cel			128KX16	128K	-40 Cel					DUAL	R-PDSO-G48	5.5 V	1.2 mm		12 mm	Not Qualified	BOTTOM	2097152 bit	4.5 V	CAN BE PROGRAMMED AT 12V VPP; BOTTOM BOOT BLOCK					NOR TYPE		18.4 mm		70 ns	5
TMS28F512-12C3FMQ	Texas Instruments	FLASH	AUTOMOTIVE	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS		30 mA	65536 words	5	NO	5	8	CHIP CARRIER	LDCC32,.5X.6		Flash Memories	1.27 mm	125 Cel			64KX8	64K	-40 Cel		YES			QUAD	R-PQCC-J32	5.5 V	3.56 mm	1000 Write/Erase Cycles	11.43 mm	Not Qualified		524288 bit	4.5 V	BULK ERASE			NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.0001 Amp	13.97 mm		120 ns	12	NO
TMS29F010-20JQ4	Texas Instruments	FLASH	AUTOMOTIVE	32	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	16K	15 mA	131072 words	5	YES	5	8	IN-LINE, WINDOW	DIP32,.6		Flash Memories	2.54 mm	125 Cel		3-STATE	128KX8	128K	-40 Cel	8	YES			DUAL	R-GDIP-T32	5.5 V	4.907 mm	10000 Write/Erase Cycles	15.24 mm	Not Qualified		1048576 bit	4.5 V				NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.001 Amp			200 ns	5	YES
TMS28F800ET70CQ	Texas Instruments	FLASH	AUTOMOTIVE	48	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS			1048576 words	3			8	GRID ARRAY					125 Cel			1MX8	1M	-40 Cel					BOTTOM	R-PBGA-B48	3.6 V				Not Qualified	TOP	8388608 bit	2.7 V	CONFG AS 512K X 16; USER SELECTABLE 5V VCC; TOP BOOT BLOCK					NOR TYPE				100 ns	3
TMS28F004AZB90BDBJQ	Texas Instruments	FLASH	AUTOMOTIVE	44	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	MOS	GULL WING	PARALLEL	ASYNCHRONOUS			524288 words	5			8	SMALL OUTLINE				1.27 mm	125 Cel		3-STATE	512KX8	512K	-40 Cel					DUAL	R-PDSO-G44	5.5 V	2.63 mm		13.3 mm	Not Qualified	BOTTOM	4194304 bit	4.5 V						NOR TYPE		28.2 mm		90 ns	12
TMS29F256-25JQ	Texas Instruments	FLASH	AUTOMOTIVE	28	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	64	15 mA	32768 words	5	NO	5	8	IN-LINE, WINDOW	DIP28,.6		Flash Memories	2.54 mm	125 Cel		3-STATE	32KX8	32K	-40 Cel	512	NO			DUAL	R-GDIP-T28	5.5 V	4.907 mm		15.24 mm	Not Qualified		262144 bit	4.5 V		64		NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.003 Amp			250 ns	5	YES
TMS28F210-12C3FNQ4	Texas Instruments	FLASH	AUTOMOTIVE	44	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	MOS	J BEND	PARALLEL	ASYNCHRONOUS		50 mA	65536 words	5	NO	5	16	CHIP CARRIER	LDCC44,.7SQ		Flash Memories	1.27 mm	125 Cel		3-STATE	64KX16	64K	-40 Cel		YES			QUAD	S-PQCC-J44	5.5 V	4.57 mm	1000 Write/Erase Cycles	16.5862 mm	Not Qualified		1048576 bit	4.5 V	BULK ERASE			NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.0001 Amp	16.5862 mm		120 ns	12	NO
TMS28F008AEYB12BDBJQ	Texas Instruments	FLASH	AUTOMOTIVE	44	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS			524288 words	5			16	SMALL OUTLINE				1.27 mm	125 Cel			512KX16	512K	-40 Cel					DUAL	R-PDSO-G44	5.5 V	2.625 mm		13.3 mm		BOTTOM	8388608 bit	4.5 V	BOTTOM BOOT BLOCK							28.2 mm		120 ns	5
TMS28F800ASYB80BDBJQ	Texas Instruments	FLASH	AUTOMOTIVE	44	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS			1048576 words	3			8	SMALL OUTLINE				1.27 mm	125 Cel			1MX8	1M	-40 Cel					DUAL	R-PDSO-G44	3.6 V	2.625 mm		13.3 mm		BOTTOM	8388608 bit	2.7 V	BOTTOM BOOT BLOCK							28.2 mm		80 ns	3
TMS28F010-12C3NQ	Texas Instruments	FLASH	AUTOMOTIVE	32	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		30 mA	131072 words	5	NO	5	8	IN-LINE	DIP32,.6		Flash Memories	2.54 mm	125 Cel			128KX8	128K	-40 Cel		YES			DUAL	R-PDIP-T32	5.5 V	5.08 mm	1000 Write/Erase Cycles	15.24 mm	Not Qualified		1048576 bit	4.5 V	BULK ERASE			NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.0001 Amp	41.4 mm		120 ns	12	NO
TMS28F400BZT-80BDBRQ	Texas Instruments	FLASH	AUTOMOTIVE	56	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,96K,128K	65 mA	524288 words	5	NO	5	8	SMALL OUTLINE, THIN PROFILE	TSSOP56,.8,20	16	Flash Memories	.5 mm	125 Cel		3-STATE	512KX8	512K	-40 Cel	1,2,1,3	YES			DUAL	R-PDSO-G56	5.5 V	1.2 mm	10000 Write/Erase Cycles	14 mm	Not Qualified	TOP	4194304 bit	4.5 V	DEEP POWER-DOWN					NOR TYPE	.000008 Amp	18.4 mm		80 ns	12	NO
TMS28F010B-12C5DUQ	Texas Instruments	FLASH	AUTOMOTIVE	32	TSOP1-R	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		30 mA	131072 words	5	NO	5	8	SMALL OUTLINE, THIN PROFILE	TSSOP32,.8,20		Flash Memories	.5 mm	125 Cel	YES	3-STATE	128KX8	128K	-40 Cel		YES			DUAL	R-PDSO-G32	5.5 V	1.2 mm	100000 Write/Erase Cycles	8 mm	Not Qualified		1048576 bit	4.5 V				NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.0001 Amp	18.415 mm		120 ns	12	NO
TMS28F010A-17C4DUQ4	Texas Instruments	FLASH	AUTOMOTIVE	32	TSOP1-R	RECTANGULAR	PLASTIC/EPOXY	YES	1	MOS	GULL WING	PARALLEL	ASYNCHRONOUS			131072 words	5			8	SMALL OUTLINE, THIN PROFILE				.5 mm	125 Cel		3-STATE	128KX8	128K	-40 Cel					DUAL	R-PDSO-G32	5.5 V	1.2 mm		8 mm	Not Qualified		1048576 bit	4.5 V	10000 PROGRAM/ERASE CYCLES					NOR TYPE		18.415 mm		170 ns	12
TMS28F010A-17C4FMQ4	Texas Instruments	FLASH	AUTOMOTIVE	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	MOS	J BEND	PARALLEL	ASYNCHRONOUS			131072 words	5			8	CHIP CARRIER				1.27 mm	125 Cel		3-STATE	128KX8	128K	-40 Cel					QUAD	R-PQCC-J32	5.5 V	3.56 mm		11.43 mm	Not Qualified		1048576 bit	4.5 V	10000 PROGRAM/ERASE CYCLES					NOR TYPE		13.97 mm		170 ns	12
TMS28F008AVB120CDCDQ	Texas Instruments	FLASH	AUTOMOTIVE	40	TSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS			1048576 words	3			8	SMALL OUTLINE, THIN PROFILE				1.27 mm	125 Cel			1MX8	1M	-40 Cel					DUAL	R-PDSO-G40	3.6 V	1.2 mm		10 mm	Not Qualified	BOTTOM	8388608 bit	2.7 V	BOTTOM BOOT BLOCK					NOR TYPE		18.4 mm		120 ns	3
TMS28F200BZB90CDBJQ	Texas Instruments	FLASH	AUTOMOTIVE	44	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,96K,128K	65 mA	262144 words	5	NO	5	8	SMALL OUTLINE	SOP44,.63	8	Flash Memories	1.27 mm	125 Cel			256KX8	256K	-40 Cel	1,2,1,1	YES			DUAL	R-PDSO-G44	5.5 V	2.63 mm	100000 Write/Erase Cycles	13.3 mm	Not Qualified	BOTTOM	2097152 bit	4.5 V	CAN BE ORGANIZED AS 128K X 16; BOTTOM BOOT BLOCK			NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.000008 Amp	28.2 mm		90 ns	12	NO
TMS28F200AFB80CDCDQ	Texas Instruments	FLASH	AUTOMOTIVE	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS			131072 words	5			16	SMALL OUTLINE, THIN PROFILE		8		.5 mm	125 Cel			128KX16	128K	-40 Cel					DUAL	R-PDSO-G48	5.5 V	1.2 mm		12 mm	Not Qualified	BOTTOM	2097152 bit	4.5 V	CAN BE PROGRAMMED AT 12V VPP; BOTTOM BOOT BLOCK					NOR TYPE		18.4 mm		80 ns	5
TMS29F010-120JQ	Texas Instruments	FLASH	AUTOMOTIVE	32	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	16K	15 mA	131072 words	5	YES	5	8	IN-LINE, WINDOW	DIP32,.6		Flash Memories	2.54 mm	125 Cel		3-STATE	128KX8	128K	-40 Cel	8	YES			DUAL	R-GDIP-T32	5.25 V	4.907 mm	10000 Write/Erase Cycles	15.24 mm	Not Qualified		1048576 bit	4.75 V				NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.001 Amp			120 ns	5	YES
TMS28F008ALYT70CDBJQ	Texas Instruments	FLASH	AUTOMOTIVE	44	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS			524288 words	3			16	SMALL OUTLINE				1.27 mm	125 Cel			512KX16	512K	-40 Cel					DUAL	R-PDSO-G44	3.6 V	2.625 mm		13.3 mm		TOP	8388608 bit	2.7 V	TOP BOOT BLOCK							28.2 mm		70 ns	3
TMS28F008EB70BDCDQ	Texas Instruments	FLASH	AUTOMOTIVE	40	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS			1048576 words	3			8	SMALL OUTLINE, THIN PROFILE				.5 mm	125 Cel			1MX8	1M	-40 Cel					DUAL	R-PDSO-G40	3.6 V	1.2 mm		10 mm	Not Qualified	BOTTOM	8388608 bit	2.7 V	USER SELECTABLE 5V VCC; BOTTOM BOOT BLOCK					NOR TYPE		18.4 mm		100 ns	3
M29F002BNT70N3F	STMicroelectronics	FLASH	AUTOMOTIVE	32	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	20 mA	262144 words	5	YES	5	8	SMALL OUTLINE, THIN PROFILE	TSSOP32,.8,20		Flash Memories	.5 mm	125 Cel			256KX8	256K	-40 Cel	1,2,1,3	YES	TIN/TIN BISMUTH		DUAL	R-PDSO-G32	5.5 V	1.2 mm	100000 Write/Erase Cycles	8 mm	Not Qualified	TOP	2097152 bit	4.5 V	TOP BOOT BLOCK		e3/e6	40	260	NOR TYPE	.0001 Amp	18.4 mm		70 ns	5	YES
M28F220-90XN3TR	STMicroelectronics	FLASH	AUTOMOTIVE	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS			262144 words	5			8	SMALL OUTLINE, THIN PROFILE		16		.5 mm	125 Cel			256KX8	256K	-40 Cel					DUAL	R-PDSO-G48	5.25 V	1.2 mm		12 mm	Not Qualified	BOTTOM	2097152 bit	4.75 V	BOTTOM BOOT BLOCK					NOR TYPE		18.4 mm		90 ns	12
M28F420-70YM3	STMicroelectronics	FLASH	AUTOMOTIVE	44	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,96K,128K	35 mA	524288 words	5	NO	5	8	SMALL OUTLINE	SOP44,.63	16	Flash Memories	1.27 mm	125 Cel			512KX8	512K	-40 Cel	1,2,1,3	YES	TIN LEAD		DUAL	R-PDSO-G44	5.5 V	2.62 mm	100000 Write/Erase Cycles	13.3 mm	Not Qualified	BOTTOM	4194304 bit	4.5 V	BOTTOM BOOT BLOCK		e0			NOR TYPE	.00005 Amp	28.2 mm		70 ns	12	NO
M58BW016BT100ZA3F	STMicroelectronics	FLASH	AUTOMOTIVE	80	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	2K,16K	30 mA	524288 words	3	NO	2.5/3.3,3/3.3	32	GRID ARRAY, LOW PROFILE	BGA80,8X10,40		Flash Memories	1 mm	125 Cel			512KX32	512K	-40 Cel	8,31	YES	Tin/Silver/Copper (Sn95.5Ag4.0Cu0.5)		BOTTOM	R-PBGA-B80	3.6 V	1.7 mm		10 mm	Not Qualified	TOP	16777216 bit	2.7 V	SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE; TOP BOOT BLOCK		e1			NOR TYPE	.000005 Amp	12 mm	YES	100 ns	3	NO
M58BW016DT80T3	STMicroelectronics	FLASH	AUTOMOTIVE	80	QFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	2K,16K	30 mA	524288 words	3	NO	2.5/3.3,3/3.3	32	FLATPACK	QFP80,.7X.9,32		Flash Memories	.8 mm	125 Cel			512KX32	512K	-40 Cel	8,31	YES	TIN LEAD		QUAD	R-PQFP-G80	3.6 V	3.4 mm		14 mm	Not Qualified	TOP	16777216 bit	2.7 V	TOP BOOT BLOCK		e0			NOR TYPE	.000005 Amp	20 mm	YES	80 ns	3	NO
M29F400BB90M3T	STMicroelectronics	FLASH	AUTOMOTIVE	44	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	20 mA	262144 words	5	YES	5	16	SMALL OUTLINE	SOP44,.63	8	Flash Memories	1.27 mm	125 Cel			256KX16	256K	-40 Cel	1,2,1,7	YES	TIN LEAD	YES	DUAL	R-PDSO-G44	5.5 V	2.62 mm	100000 Write/Erase Cycles	13.3 mm	Not Qualified	BOTTOM	4194304 bit	4.5 V	BOTTOM BOOT BLOCK		e0			NOR TYPE	.0001 Amp	28.2 mm		70 ns	5	YES
M29F200T-70M3	STMicroelectronics	FLASH	AUTOMOTIVE	44	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	20 mA	131072 words	5	YES	5	16	SMALL OUTLINE	SOP44,.63	8	Flash Memories	1.27 mm	125 Cel			128KX16	128K	-40 Cel	1,2,1,3	YES	TIN LEAD	YES	DUAL	R-PDSO-G44	5.5 V	2.62 mm	100000 Write/Erase Cycles	13.3 mm	Not Qualified	TOP	2097152 bit	4.5 V	TOP BOOT BLOCK		e0			NOR TYPE	.0001 Amp	28.2 mm		70 ns	5	YES
M29F002BNT70N3T	STMicroelectronics	FLASH	AUTOMOTIVE	32	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	20 mA	262144 words	5	YES	5	8	SMALL OUTLINE, THIN PROFILE	TSSOP32,.8,20		Flash Memories	.5 mm	125 Cel			256KX8	256K	-40 Cel	1,2,1,3	YES	TIN LEAD		DUAL	R-PDSO-G32	5.5 V	1.2 mm	100000 Write/Erase Cycles	8 mm	Not Qualified	TOP	2097152 bit	4.5 V	TOP BOOT BLOCK		e0			NOR TYPE	.0001 Amp	18.4 mm		70 ns	5	YES
M29F100B-120XN3TR	STMicroelectronics	FLASH	AUTOMOTIVE	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	20 mA	131072 words	5	YES	5	8	SMALL OUTLINE, THIN PROFILE	TSSOP48,.8,20	8	Flash Memories	.5 mm	125 Cel			128KX8	128K	-40 Cel	1,2,1,1	YES	TIN LEAD	YES	DUAL	R-PDSO-G48	5.25 V	1.2 mm		12 mm	Not Qualified	BOTTOM	1048576 bit	4.75 V	CONFG AS 64K X 16; BOTTOM BOOT BLOCK		e0			NOR TYPE	.0001 Amp	18.4 mm		120 ns	5	YES
M29F002BNT70K3F	STMicroelectronics	FLASH	AUTOMOTIVE	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	20 mA	262144 words	5	YES	5	8	CHIP CARRIER	LDCC32,.5X.6		Flash Memories	1.27 mm	125 Cel			256KX8	256K	-40 Cel	1,2,1,3	YES			QUAD	R-PQCC-J32	5.5 V	3.56 mm	100000 Write/Erase Cycles	11.43 mm	Not Qualified	TOP	2097152 bit	4.5 V	TOP BOOT BLOCK			NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.0001 Amp	13.97 mm		70 ns	5	YES
M28F512-90C3	STMicroelectronics	FLASH	AUTOMOTIVE	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS		30 mA	65536 words	5	NO	5	8	CHIP CARRIER	LDCC32,.5X.6		Flash Memories	1.27 mm	125 Cel		3-STATE	64KX8	64K	-40 Cel		YES	TIN LEAD		QUAD	R-PQCC-J32	5.5 V	3.56 mm	10000 Write/Erase Cycles	11.455 mm	Not Qualified		524288 bit	4.5 V			e0			NOR TYPE	.0001 Amp	13.995 mm		90 ns	12	NO
M28F256-12XB314	STMicroelectronics	FLASH	AUTOMOTIVE	32	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS			32768 words	5			8	IN-LINE				2.54 mm	125 Cel		3-STATE	32KX8	32K	-40 Cel					DUAL	R-PDIP-T32	5.25 V			15.24 mm	Not Qualified		262144 bit	4.75 V	10000 ERASE/PROGRAM CYCLES					NOR TYPE				120 ns	12
M29F100B-70XN3TR	STMicroelectronics	FLASH	AUTOMOTIVE	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	20 mA	65536 words	5	YES	5	16	SMALL OUTLINE, THIN PROFILE	TSSOP48,.8,20	8	Flash Memories	.5 mm	125 Cel		3-STATE	64KX16	64K	-40 Cel	1,2,1,1	YES	TIN LEAD	YES	DUAL	R-PDSO-G48	5.25 V	1.2 mm		12 mm	Not Qualified	BOTTOM	1048576 bit	4.75 V	CONFG AS 64K X 16; BOTTOM BOOT BLOCK		e0			NOR TYPE	.0001 Amp	18.4 mm		70 ns	5	YES

Flash Memory

Flash memory is a type of non-volatile computer memory that is commonly used in digital devices such as USB drives, solid-state drives, and digital cameras. It is a type of EEPROM (Electrically Erasable Programmable Read-Only Memory) that allows data to be erased and reprogrammed in blocks instead of one byte at a time. Flash memory uses a floating gate transistor to store data, which allows it to retain information even when the power is turned off.

Flash memory is widely used in digital devices because of its high capacity, small size, and fast access times. It is also more durable than other types of memory, such as hard disk drives, because it has no moving parts. This makes it ideal for use in portable devices that may be subject to physical shock or vibration.

There are two types of flash memory: NOR flash and NAND flash. NOR flash is faster than NAND flash, but it has lower density and higher cost per bit. NOR flash is typically used for code storage, such as firmware or boot code, because it provides faster access times. NAND flash has higher density and lower cost per bit, which makes it ideal for data storage applications.

Flash memory has a limited lifespan, as it can only be erased and reprogrammed a limited number of times. This is because the process of erasing and reprogramming the memory causes wear and tear on the floating gate transistor. However, modern flash memory devices have a sophisticated wear-leveling algorithm that distributes writes evenly across the memory, which extends the lifespan of the device.