AUTOMOTIVE Flash Memory 2,400+

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Screening Level	Terminal Form	Parallel or Serial	Operating Mode	Sector Size (Words)	Maximum Supply Current	No. of Words	Nominal Supply Voltage / Vsup (V)	Toggle Bit	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Alternate Memory Width	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	No. of Sectors/Size	Command User Interface	Terminal Finish	Ready or Busy	Terminal Position	JESD-30 Code	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Endurance	Width	Qualification	Boot Block	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	Page Size (words)	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Type	Maximum Standby Current	Length	Common Flash Interface	Maximum Access Time	Programming Voltage (V)	Data Polling
M28F151-90K3	STMicroelectronics	FLASH	AUTOMOTIVE	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		J BEND	PARALLEL			30 mA	196608 words	5	NO	5	8	CHIP CARRIER	LDCC32,.5X.6		Flash Memories	1.27 mm	125 Cel		192KX8	192K	-40 Cel		YES	TIN LEAD		QUAD	R-PQCC-J32					Not Qualified		1572864 bit				e0			NOR TYPE	.0001 Amp			90 ns		NO
M58BF008100D3T	STMicroelectronics	FLASH	AUTOMOTIVE	80	QFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	SYNCHRONOUS			262144 words	5			32	FLATPACK				.8 mm	125 Cel		256KX32	256K	-40 Cel					QUAD	R-PQFP-G80	5.5 V	3.4 mm		14 mm	Not Qualified		8388608 bit	4.5 V						NOR TYPE		20 mm		20 ns	5
M28F256-10B313	STMicroelectronics	FLASH	AUTOMOTIVE	32	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS			32768 words	5			8	IN-LINE				2.54 mm	125 Cel	3-STATE	32KX8	32K	-40 Cel					DUAL	R-PDIP-T32	5.5 V			15.24 mm	Not Qualified		262144 bit	4.5 V	1000 ERASE/PROGRAM CYCLES					NOR TYPE				100 ns	12
M28W440-150N3TR	STMicroelectronics	FLASH	AUTOMOTIVE	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	MOS		GULL WING	PARALLEL	ASYNCHRONOUS			524288 words	3			8	SMALL OUTLINE, THIN PROFILE		16		.5 mm	125 Cel	3-STATE	512KX8	512K	-40 Cel					DUAL	R-PDSO-G48	3.3 V	1.2 mm		12 mm	Not Qualified	BOTTOM	4194304 bit	2.7 V						NOR TYPE		18.4 mm		150 ns	12
M29F002BB55K3E	STMicroelectronics	FLASH	AUTOMOTIVE	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	20 mA	262144 words	5	YES	5	8	CHIP CARRIER	LDCC32,.5X.6		Flash Memories	1.27 mm	125 Cel		256KX8	256K	-40 Cel	1,2,1,3	YES			QUAD	R-PQCC-J32	5.5 V	3.56 mm	100000 Write/Erase Cycles	11.43 mm	Not Qualified	BOTTOM	2097152 bit	4.5 V	BOTTOM BOOT BLOCK			NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.0001 Amp	13.97 mm		55 ns	5	YES
M29F016B70M3	STMicroelectronics	FLASH	AUTOMOTIVE	44	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	64K	20 mA	2097152 words	5	YES	5	8	SMALL OUTLINE	SOP44,.63		Flash Memories	1.27 mm	125 Cel		2MX8	2M	-40 Cel	32	YES	TIN LEAD	YES	DUAL	R-PDSO-G44	5.5 V	2.62 mm		13.3 mm	Not Qualified		16777216 bit	4.5 V			e0			NOR TYPE	.00015 Amp	28.2 mm		70 ns	5	YES
M28F201-100P3	STMicroelectronics	FLASH	AUTOMOTIVE	32	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		30 mA	262144 words	5	NO	5	8	IN-LINE	DIP32,.6		Flash Memories	2.54 mm	125 Cel		256KX8	256K	-40 Cel		YES	TIN LEAD		DUAL	R-PDIP-T32	5.5 V	5.08 mm		15.24 mm	Not Qualified		2097152 bit	4.5 V			e0			NOR TYPE	.0001 Amp	41.91 mm		100 ns	12	NO
M58BW032DB55ZA3	STMicroelectronics	FLASH	AUTOMOTIVE	80	BGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		BALL	PARALLEL		4K,2K,16K		1048576 words	3.3	NO	3.3	32	GRID ARRAY	BGA80,8X10,40		Flash Memories	1 mm	125 Cel		1MX32	1M	-40 Cel	4,8,62	YES			BOTTOM	R-PBGA-B80					Not Qualified	BOTTOM	33554432 bit			4				NOR TYPE	.0001 Amp		YES	55 ns		NO
M58BW016FT80ZA3FF	STMicroelectronics	FLASH	AUTOMOTIVE	80	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	2K,16K	40 mA	524288 words	3	NO	2.5/3.3,3/3.3	32	GRID ARRAY, LOW PROFILE	BGA80,8X10,40		Flash Memories	1 mm	125 Cel		512KX32	512K	-40 Cel	8,31	YES	TIN SILVER COPPER		BOTTOM	R-PBGA-B80	3.6 V	1.6 mm		10 mm	Not Qualified	TOP	16777216 bit	2.7 V	SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE; TOP BOOT BLOCK		e1			NOR TYPE	.000005 Amp	12 mm	YES	80 ns	3	NO
M29F400B-90N3TR	STMicroelectronics	FLASH	AUTOMOTIVE	48	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	20 mA	262144 words	5	YES	5	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP48,.8,20	8	Flash Memories	.5 mm	125 Cel	3-STATE	256KX16	256K	-40 Cel	1,2,1,7	YES	TIN LEAD	YES	DUAL	R-PDSO-G48	5.5 V	1.2 mm	100000 Write/Erase Cycles	12 mm	Not Qualified	BOTTOM	4194304 bit	4.5 V	BOTTOM BOOT BLOCK		e0			NOR TYPE	.0001 Amp	18.4 mm		90 ns	5	YES
M29F400BT55MT3F	STMicroelectronics	FLASH	AUTOMOTIVE	44	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	20 mA	262144 words	5	YES	5	16	SMALL OUTLINE	SOP44,.63	8	Flash Memories	1.27 mm	125 Cel		256KX16	256K	-40 Cel	1,2,1,7	YES	MATTE TIN/NICKEL PALLADIUM GOLD	YES	DUAL	R-PDSO-G44	5.5 V	3 mm	100000 Write/Erase Cycles	12.6 mm	Not Qualified	TOP	4194304 bit	4.5 V	TOP BOOT BLOCK		e3/e4	40	245	NOR TYPE	.0001 Amp	28.5 mm		55 ns	5	YES
M28F420-80M3	STMicroelectronics	FLASH	AUTOMOTIVE	44	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,96K,128K	35 mA	524288 words	5	NO	5	8	SMALL OUTLINE	SOP44,.63	16	Flash Memories	1.27 mm	125 Cel		512KX8	512K	-40 Cel	1,2,1,3	YES	TIN LEAD		DUAL	R-PDSO-G44	5.5 V	2.62 mm	100000 Write/Erase Cycles	13.3 mm	Not Qualified	BOTTOM	4194304 bit	4.5 V	BOTTOM BOOT BLOCK		e0			NOR TYPE	.00005 Amp	28.2 mm		80 ns	12	NO
M28F1001-10C313	STMicroelectronics	FLASH	AUTOMOTIVE	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS			131072 words	5			8	CHIP CARRIER				1.27 mm	125 Cel	3-STATE	128KX8	128K	-40 Cel					QUAD	R-PQCC-J32	5.5 V	3.56 mm		11.455 mm	Not Qualified		1048576 bit	4.5 V	1000 ERASE/PROGRAM CYCLES					NOR TYPE		13.995 mm		100 ns	12
M28F1001-20B314	STMicroelectronics	FLASH	AUTOMOTIVE	32	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS			131072 words	5			8	IN-LINE				2.54 mm	125 Cel	3-STATE	128KX8	128K	-40 Cel					DUAL	R-PDIP-T32	5.5 V			15.24 mm	Not Qualified		1048576 bit	4.5 V	10000 ERASE/PROGRAM CYCLES					NOR TYPE				200 ns	12
M28F101-70XN3	STMicroelectronics	FLASH	AUTOMOTIVE	32	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS		30 mA	131072 words	5	NO	5	8	SMALL OUTLINE, THIN PROFILE	TSSOP32,.8,20		Flash Memories	.5 mm	125 Cel	3-STATE	128KX8	128K	-40 Cel		YES	TIN LEAD		DUAL	R-PDSO-G32	5.25 V	1.2 mm		8 mm	Not Qualified		1048576 bit	4.75 V			e0			NOR TYPE	.00005 Amp	18.4 mm		70 ns	12	NO
M29F400B-55M3TR	STMicroelectronics	FLASH	AUTOMOTIVE	44	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	20 mA	262144 words	5	YES	5	16	SMALL OUTLINE	SOP44,.63	8	Flash Memories	1.27 mm	125 Cel		256KX16	256K	-40 Cel	1,2,1,7	YES	TIN LEAD	YES	DUAL	R-PDSO-G44	5.5 V	2.62 mm	100000 Write/Erase Cycles	13.3 mm	Not Qualified	BOTTOM	4194304 bit	4.5 V	BOTTOM BOOT BLOCK		e0			NOR TYPE	.0001 Amp	28.2 mm		55 ns	5	YES
M29F002BNT70K3T	STMicroelectronics	FLASH	AUTOMOTIVE	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	20 mA	262144 words	5	YES	5	8	CHIP CARRIER	LDCC32,.5X.6		Flash Memories	1.27 mm	125 Cel		256KX8	256K	-40 Cel	1,2,1,3	YES	TIN LEAD		QUAD	R-PQCC-J32	5.5 V	3.56 mm	100000 Write/Erase Cycles	11.43 mm	Not Qualified	TOP	2097152 bit	4.5 V	TOP BOOT BLOCK		e0			NOR TYPE	.0001 Amp	13.97 mm		70 ns	5	YES
M29F002BB90N3E	STMicroelectronics	FLASH	AUTOMOTIVE	32	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	20 mA	262144 words	5	YES	5	8	SMALL OUTLINE, THIN PROFILE	TSSOP32,.8,20		Flash Memories	.5 mm	125 Cel		256KX8	256K	-40 Cel	1,2,1,3	YES	TIN/TIN BISMUTH		DUAL	R-PDSO-G32	5.5 V	1.2 mm	100000 Write/Erase Cycles	8 mm	Not Qualified	BOTTOM	2097152 bit	4.5 V	BOTTOM BOOT BLOCK		e3/e6	40	260	NOR TYPE	.0001 Amp	18.4 mm		70 ns	5	YES
M28F102-100N3	STMicroelectronics	FLASH	AUTOMOTIVE	40	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS		50 mA	65536 words	5	NO	5	16	SMALL OUTLINE, THIN PROFILE	TSSOP40,.56,20		Flash Memories	.5 mm	125 Cel	3-STATE	64KX16	64K	-40 Cel		YES	TIN LEAD		DUAL	R-PDSO-G40	5.5 V	1.2 mm		10 mm	Not Qualified		1048576 bit	4.5 V			e0			NOR TYPE	.0001 Amp	12.4 mm		100 ns	12	NO
M29F800DT55M3F	STMicroelectronics	FLASH	AUTOMOTIVE	44	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS			524288 words	5			16	SMALL OUTLINE		8		1.27 mm	125 Cel		512KX16	512K	-40 Cel					DUAL	R-PDSO-G44	5.5 V	2.8 mm		13.3 mm	Not Qualified	TOP	8388608 bit	4.5 V	TOP BOOT BLOCK			NOT SPECIFIED	250	NOR TYPE		28.2 mm		55 ns	5
M58BW016BT80ZA3FT	STMicroelectronics	FLASH	AUTOMOTIVE	80	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	2K,16K	30 mA	524288 words	3	NO	2.5/3.3,3/3.3	32	GRID ARRAY, LOW PROFILE	BGA80,8X10,40		Flash Memories	1 mm	125 Cel		512KX32	512K	-40 Cel	8,31	YES	Tin/Silver/Copper (Sn95.5Ag4.0Cu0.5)		BOTTOM	R-PBGA-B80	3.6 V	1.7 mm		10 mm	Not Qualified	TOP	16777216 bit	2.7 V	SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE; TOP BOOT BLOCK		e1			NOR TYPE	.000005 Amp	12 mm	YES	80 ns	3	NO
M29F200BT45MT3T	STMicroelectronics	FLASH	AUTOMOTIVE	44	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	20 mA	131072 words	5	YES	5	16	SMALL OUTLINE	SOP44,.63	8	Flash Memories	1.27 mm	125 Cel		128KX16	128K	-40 Cel	1,2,1,3	YES	TIN LEAD	YES	DUAL	R-PDSO-G44	5.5 V	3 mm	100000 Write/Erase Cycles	12.6 mm	Not Qualified	TOP	2097152 bit	4.5 V	TOP BOOT BLOCK		e0			NOR TYPE	.0001 Amp	28.5 mm		45 ns	5	YES
M28V420-150N3TR	STMicroelectronics	FLASH	AUTOMOTIVE	56	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS			524288 words	3.3			8	SMALL OUTLINE, THIN PROFILE				.5 mm	125 Cel		512KX8	512K	-40 Cel					DUAL	R-PDSO-G56	3.6 V	1.2 mm		14 mm	Not Qualified	BOTTOM	4194304 bit	3 V	10000 PROGRAM/ERASE CYCLES; USER CONFIGURABLE AS 256K X 16; BLOCK ERASE					NOR TYPE		18.4 mm		150 ns	12
M28F1001-15XC314	STMicroelectronics	FLASH	AUTOMOTIVE	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS			131072 words	5			8	CHIP CARRIER				1.27 mm	125 Cel	3-STATE	128KX8	128K	-40 Cel					QUAD	R-PQCC-J32	5.25 V	3.56 mm		11.455 mm	Not Qualified		1048576 bit	4.75 V	10000 ERASE/PROGRAM CYCLES					NOR TYPE		13.995 mm		150 ns	12
M29F160BB90N3	STMicroelectronics	FLASH	AUTOMOTIVE	48	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		GULL WING	PARALLEL		16K,8K,32K,64K	20 mA	1048576 words	5	YES	5	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP48,.8,20	8	Flash Memories	.5 mm	125 Cel		1MX16	1M	-40 Cel	1,2,1,31	YES	Tin/Lead (Sn/Pb)	YES	DUAL	R-PDSO-G48					Not Qualified	BOTTOM	16777216 bit				e0			NOR TYPE	.00015 Amp			90 ns		YES
M29F002BNT120P3T	STMicroelectronics	FLASH	AUTOMOTIVE	32	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS			262144 words	5			8	IN-LINE				2.54 mm	125 Cel		256KX8	256K	-40 Cel					DUAL	R-PDIP-T32	5.5 V	5.08 mm		15.24 mm	Not Qualified	TOP	2097152 bit	4.5 V	TOP BOOT BLOCK					NOR TYPE		41.91 mm		70 ns	5
M28F220-120XM3TR	STMicroelectronics	FLASH	AUTOMOTIVE	44	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS			262144 words	5			8	SMALL OUTLINE		16		1.27 mm	125 Cel		256KX8	256K	-40 Cel					DUAL	R-PDSO-G44	5.25 V	2.62 mm		13.3 mm	Not Qualified	BOTTOM	2097152 bit	4.75 V	BOTTOM BOOT BLOCK					NOR TYPE		28.2 mm		120 ns	12
M29F400BB90N3F	STMicroelectronics	FLASH	AUTOMOTIVE	48	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	20 mA	262144 words	5	YES	5	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP48,.8,20	8	Flash Memories	.5 mm	125 Cel		256KX16	256K	-40 Cel	1,2,1,7	YES	TIN/TIN BISMUTH	YES	DUAL	R-PDSO-G48	5.5 V	1.2 mm	100000 Write/Erase Cycles	12 mm	Not Qualified	BOTTOM	4194304 bit	4.5 V	BOTTOM BOOT BLOCK		e3/e6	40	260	NOR TYPE	.0001 Amp	18.4 mm		70 ns	5	YES
M29F200T-70XN3RTR	STMicroelectronics	FLASH	AUTOMOTIVE	48	TSOP1-R	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS			262144 words	5			8	SMALL OUTLINE, THIN PROFILE		16		.5 mm	125 Cel	3-STATE	256KX8	256K	-40 Cel					DUAL	R-PDSO-G48	5.25 V	1.2 mm		12 mm	Not Qualified		2097152 bit	4.75 V								18.4 mm		70 ns	5
M29F200B-55M3	STMicroelectronics	FLASH	AUTOMOTIVE	44	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	20 mA	131072 words	5	YES	5	16	SMALL OUTLINE	SOP44,.63	8	Flash Memories	1.27 mm	125 Cel		128KX16	128K	-40 Cel	1,2,1,3	YES	TIN LEAD	YES	DUAL	R-PDSO-G44	5.5 V	2.62 mm	100000 Write/Erase Cycles	13.3 mm	Not Qualified	BOTTOM	2097152 bit	4.5 V	BOTTOM BOOT BLOCK		e0			NOR TYPE	.0001 Amp	28.2 mm		55 ns	5	YES
M28F256-15C3TR	STMicroelectronics	FLASH	AUTOMOTIVE	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS			32768 words	5			8	CHIP CARRIER				1.27 mm	125 Cel	3-STATE	32KX8	32K	-40 Cel					QUAD	R-PQCC-J32	5.5 V	3.56 mm		11.455 mm	Not Qualified		262144 bit	4.5 V	1000 ERASE/PROGRAM CYCLES					NOR TYPE		13.995 mm		150 ns	12
M58BW016BT90ZA3FT	STMicroelectronics	FLASH	AUTOMOTIVE	80	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	2K,16K	30 mA	524288 words	3	NO	2.5/3.3,3/3.3	32	GRID ARRAY, LOW PROFILE	BGA80,8X10,40		Flash Memories	1 mm	125 Cel		512KX32	512K	-40 Cel	8,31	YES	Tin/Silver/Copper (Sn95.5Ag4.0Cu0.5)		BOTTOM	R-PBGA-B80	3.6 V	1.7 mm		10 mm	Not Qualified	TOP	16777216 bit	2.7 V	SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE; TOP BOOT BLOCK		e1			NOR TYPE	.000005 Amp	12 mm	YES	90 ns	3	NO
M28F201-120XN3	STMicroelectronics	FLASH	AUTOMOTIVE	32	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS		30 mA	262144 words	5	NO	5	8	SMALL OUTLINE, THIN PROFILE	TSSOP32,.8,20		Flash Memories	.5 mm	125 Cel		256KX8	256K	-40 Cel		YES	TIN LEAD		DUAL	R-PDSO-G32	5.25 V	1.2 mm		8 mm	Not Qualified		2097152 bit	4.75 V			e0			NOR TYPE	.0001 Amp	18.4 mm		120 ns	12	NO
M29F002BT120K3E	STMicroelectronics	FLASH	AUTOMOTIVE	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	20 mA	262144 words	5	YES	5	8	CHIP CARRIER	LDCC32,.5X.6		Flash Memories	1.27 mm	125 Cel		256KX8	256K	-40 Cel	1,2,1,3	YES			QUAD	R-PQCC-J32	5.5 V	3.56 mm	100000 Write/Erase Cycles	11.43 mm	Not Qualified	TOP	2097152 bit	4.5 V	TOP BOOT BLOCK			NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.0001 Amp	13.97 mm		70 ns	5	YES
M29F400BB90MT3F	STMicroelectronics	FLASH	AUTOMOTIVE	44	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	20 mA	262144 words	5	YES	5	16	SMALL OUTLINE	SOP44,.63	8	Flash Memories	1.27 mm	125 Cel		256KX16	256K	-40 Cel	1,2,1,7	YES	MATTE TIN/NICKEL PALLADIUM GOLD	YES	DUAL	R-PDSO-G44	5.5 V	3 mm	100000 Write/Erase Cycles	12.6 mm	Not Qualified	BOTTOM	4194304 bit	4.5 V	BOTTOM BOOT BLOCK		e3/e4	40	245	NOR TYPE	.0001 Amp	28.5 mm		70 ns	5	YES
M28F256-15XB3TR	STMicroelectronics	FLASH	AUTOMOTIVE	32	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS			32768 words	5			8	IN-LINE				2.54 mm	125 Cel	3-STATE	32KX8	32K	-40 Cel					DUAL	R-PDIP-T32	5.25 V	5.08 mm		15.24 mm	Not Qualified		262144 bit	4.75 V						NOR TYPE		41.91 mm		150 ns	12
M28F101-150N3RTR	STMicroelectronics	FLASH	AUTOMOTIVE	32	TSOP1-R	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS			131072 words	5			8	SMALL OUTLINE, THIN PROFILE				.5 mm	125 Cel	3-STATE	128KX8	128K	-40 Cel					DUAL	R-PDSO-G32	5.5 V	1.2 mm		8 mm	Not Qualified		1048576 bit	4.5 V						NOR TYPE		18.4 mm		150 ns	12
M29F080A120N3TR	STMicroelectronics	FLASH	AUTOMOTIVE	40	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS			1048576 words	5			8	SMALL OUTLINE, THIN PROFILE				.5 mm	125 Cel		1MX8	1M	-40 Cel					DUAL	R-PDSO-G40	5.5 V	1.2 mm		10 mm	Not Qualified		8388608 bit	4.5 V						NOR TYPE		18.4 mm		90 ns	5
M28W440-180M3TR	STMicroelectronics	FLASH	AUTOMOTIVE	44	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	MOS		GULL WING	PARALLEL	ASYNCHRONOUS			524288 words	3			8	SMALL OUTLINE		16		1.27 mm	125 Cel	3-STATE	512KX8	512K	-40 Cel					DUAL	R-PDSO-G44	3.3 V	2.62 mm		13.3 mm	Not Qualified	BOTTOM	4194304 bit	2.7 V						NOR TYPE		28.2 mm		180 ns	12
M29F002BNB70K3	STMicroelectronics	FLASH	AUTOMOTIVE	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	20 mA	262144 words	5	YES	5	8	CHIP CARRIER	LDCC32,.5X.6		Flash Memories	1.27 mm	125 Cel		256KX8	256K	-40 Cel	1,2,1,3	YES	TIN LEAD		QUAD	R-PQCC-J32	5.5 V	3.56 mm	100000 Write/Erase Cycles	11.43 mm	Not Qualified	BOTTOM	2097152 bit	4.5 V	BOTTOM BOOT BLOCK		e0			NOR TYPE	.0001 Amp	13.97 mm		70 ns	5	YES
M58BW32FT5ZA3F	STMicroelectronics	FLASH	AUTOMOTIVE	80	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	PARALLEL	SYNCHRONOUS	4K,2K,16K	50 mA	524288 words	2.7	NO	3/3.3	32	GRID ARRAY, LOW PROFILE	BGA80,8X10,40		Flash Memories	1 mm	125 Cel		512KX32	512K	-40 Cel	4,8,62	YES			BOTTOM	R-PBGA-B80	3.3 V	1.7 mm		10 mm	Not Qualified	TOP	16777216 bit	2.5 V		4				NOR TYPE	.00015 Amp	12 mm	YES	55 ns	3.3	NO
M28F101-70N3	STMicroelectronics	FLASH	AUTOMOTIVE	32	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS		30 mA	131072 words	5	NO	5	8	SMALL OUTLINE, THIN PROFILE	TSSOP32,.8,20		Flash Memories	.5 mm	125 Cel	3-STATE	128KX8	128K	-40 Cel		YES	TIN LEAD		DUAL	R-PDSO-G32	5.5 V	1.2 mm		8 mm	Not Qualified		1048576 bit	4.5 V			e0			NOR TYPE	.00005 Amp	18.4 mm		70 ns	12	NO
M58BW016BT100ZA3	STMicroelectronics	FLASH	AUTOMOTIVE	80	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	2K,16K	30 mA	524288 words	3	NO	2.5/3.3,3/3.3	32	GRID ARRAY, LOW PROFILE	BGA80,8X10,40		Flash Memories	1 mm	125 Cel		512KX32	512K	-40 Cel	8,31	YES	Tin/Silver/Copper (Sn95.5Ag4.0Cu0.5)		BOTTOM	R-PBGA-B80	3.6 V	1.7 mm		10 mm	Not Qualified	TOP	16777216 bit	2.7 V	TOP BOOT BLOCK		e1			NOR TYPE	.000005 Amp	12 mm	YES	100 ns	3	NO
M29F200BT70M3	STMicroelectronics	FLASH	AUTOMOTIVE	44	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	20 mA	131072 words	5	YES	5	16	SMALL OUTLINE	SOP44,.63	8	Flash Memories	1.27 mm	125 Cel		128KX16	128K	-40 Cel	1,2,1,3	YES	Matte Tin (Sn)	YES	DUAL	R-PDSO-G44	5.5 V	3 mm	100000 Write/Erase Cycles	12.6 mm	Not Qualified	TOP	2097152 bit	4.5 V	TOP BOOT BLOCK		e3			NOR TYPE	.0001 Amp	28.5 mm		70 ns	5	YES
M28F256-12B3TR	STMicroelectronics	FLASH	AUTOMOTIVE	32	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS			32768 words	5			8	IN-LINE				2.54 mm	125 Cel	3-STATE	32KX8	32K	-40 Cel					DUAL	R-PDIP-T32	5.5 V	5.08 mm		15.24 mm	Not Qualified		262144 bit	4.5 V						NOR TYPE		41.91 mm		120 ns	12
M29F040-150XK3TR	STMicroelectronics	FLASH	AUTOMOTIVE	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	64K	40 mA	524288 words	5	YES	5	8	CHIP CARRIER	LDCC32,.5X.6		Flash Memories	1.27 mm	125 Cel	3-STATE	512KX8	512K	-40 Cel	8	YES	TIN LEAD		QUAD	R-PQCC-J32	5.25 V	3.56 mm	100000 Write/Erase Cycles	11.455 mm	Not Qualified		4194304 bit	4.75 V			e0			NOR TYPE	.00005 Amp	13.995 mm		150 ns	5	YES
M29F002BB90P3	STMicroelectronics	FLASH	AUTOMOTIVE	32	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	20 mA	262144 words	5	YES	5	8	IN-LINE	DIP32,.6		Flash Memories	2.54 mm	125 Cel		256KX8	256K	-40 Cel	1,2,1,3	YES	MATTE TIN		DUAL	R-PDIP-T32	5.5 V	5.08 mm	100000 Write/Erase Cycles	15.24 mm	Not Qualified	BOTTOM	2097152 bit	4.5 V	BOTTOM BOOT BLOCK		e3			NOR TYPE	.0001 Amp	41.91 mm		70 ns	5	YES
M58BW016DT70ZA3FF	STMicroelectronics	FLASH	AUTOMOTIVE	80	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	2K,16K	30 mA	524288 words	3	NO	2.5/3.3,3/3.3	32	GRID ARRAY, LOW PROFILE	BGA80,8X10,40		Flash Memories	1 mm	125 Cel		512KX32	512K	-40 Cel	8,31	YES	TIN SILVER COPPER		BOTTOM	R-PBGA-B80	3.6 V	1.6 mm		10 mm	Not Qualified	TOP	16777216 bit	2.7 V	SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE; TOP BOOT BLOCK		e1			NOR TYPE	.000005 Amp	12 mm	YES	70 ns	3	NO

Flash Memory

Flash memory is a type of non-volatile computer memory that is commonly used in digital devices such as USB drives, solid-state drives, and digital cameras. It is a type of EEPROM (Electrically Erasable Programmable Read-Only Memory) that allows data to be erased and reprogrammed in blocks instead of one byte at a time. Flash memory uses a floating gate transistor to store data, which allows it to retain information even when the power is turned off.

Flash memory is widely used in digital devices because of its high capacity, small size, and fast access times. It is also more durable than other types of memory, such as hard disk drives, because it has no moving parts. This makes it ideal for use in portable devices that may be subject to physical shock or vibration.

There are two types of flash memory: NOR flash and NAND flash. NOR flash is faster than NAND flash, but it has lower density and higher cost per bit. NOR flash is typically used for code storage, such as firmware or boot code, because it provides faster access times. NAND flash has higher density and lower cost per bit, which makes it ideal for data storage applications.

Flash memory has a limited lifespan, as it can only be erased and reprogrammed a limited number of times. This is because the process of erasing and reprogramming the memory causes wear and tear on the floating gate transistor. However, modern flash memory devices have a sophisticated wear-leveling algorithm that distributes writes evenly across the memory, which extends the lifespan of the device.