AUTOMOTIVE Flash Memory 2,400+

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Terminal Form	Parallel or Serial	Operating Mode	Sector Size (Words)	Maximum Supply Current	No. of Words	Nominal Supply Voltage / Vsup (V)	Toggle Bit	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Alternate Memory Width	Sub-Category	Minimum Data Retention Time	Terminal Pitch	Maximum Operating Temperature	Reverse Pinout	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	No. of Sectors/Size	Command User Interface	Terminal Finish	Ready or Busy	Terminal Position	JESD-30 Code	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Endurance	Width	Qualification	Boot Block	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Type	Maximum Standby Current	Length	Common Flash Interface	Maximum Access Time	Programming Voltage (V)	Data Polling
M28F410-80WN3	STMicroelectronics	FLASH	AUTOMOTIVE	56	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	PARALLEL		16K,8K,96K,128K	60 mA	262144 words	5	NO	5	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP56,.8,20	8	Flash Memories		.5 mm	125 Cel			256KX16	256K	-40 Cel	1,2,1,3	YES	TIN LEAD		DUAL	R-PDSO-G56					Not Qualified	TOP	4194304 bit			e0			NOR TYPE	.0001 Amp			80 ns		NO
M28F256-12F312	STMicroelectronics	FLASH	AUTOMOTIVE	32	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS			32768 words	5			8	IN-LINE, WINDOW					2.54 mm	125 Cel		3-STATE	32KX8	32K	-40 Cel					DUAL	R-GDIP-T32	5.5 V	5.72 mm		15.24 mm	Not Qualified		262144 bit	4.5 V	100 ERASE/PROGRAM CYCLES				NOR TYPE		41.885 mm		120 ns	12
M58BW016DB90T3FT	STMicroelectronics	FLASH	AUTOMOTIVE	80	QFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	2K,16K	30 mA	524288 words	3	NO	2.5/3.3,3/3.3	32	FLATPACK	QFP80,.7X.9,32		Flash Memories		.8 mm	125 Cel			512KX32	512K	-40 Cel	8,31	YES	TIN LEAD		QUAD	R-PQFP-G80	3.6 V	3.4 mm		14 mm	Not Qualified	BOTTOM	16777216 bit	2.7 V	SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE; BOTTOM BOOT BLOCK	e0			NOR TYPE	.000005 Amp	20 mm	YES	90 ns	3	NO
M29F100T-70XM3TR	STMicroelectronics	FLASH	AUTOMOTIVE	44	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	20 mA	65536 words	5	YES	5	16	SMALL OUTLINE	SOP44,.63	8	Flash Memories		1.27 mm	125 Cel		3-STATE	64KX16	64K	-40 Cel	1,2,1,1	YES	TIN LEAD	YES	DUAL	R-PDSO-G44	5.25 V	2.62 mm		13.3 mm	Not Qualified	TOP	1048576 bit	4.75 V	CONFG AS 64K X 16; TOP BOOT BLOCK	e0			NOR TYPE	.0001 Amp	28.2 mm		70 ns	5	YES
M28F201-150XN3TR	STMicroelectronics	FLASH	AUTOMOTIVE	32	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS			262144 words	5			8	SMALL OUTLINE, THIN PROFILE					.5 mm	125 Cel			256KX8	256K	-40 Cel					DUAL	R-PDSO-G32	5.25 V	1.2 mm		8 mm	Not Qualified		2097152 bit	4.75 V					NOR TYPE		18.4 mm		150 ns	12
M29F080A90N3T	STMicroelectronics	FLASH	AUTOMOTIVE	40	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	64K	20 mA	1048576 words	5	YES	5	8	SMALL OUTLINE, THIN PROFILE	TSSOP40,.8,20		Flash Memories		.5 mm	125 Cel			1MX8	1M	-40 Cel	16	YES	TIN LEAD	YES	DUAL	R-PDSO-G40	5.5 V	1.2 mm		10 mm	Not Qualified		8388608 bit	4.5 V		e0			NOR TYPE	.00015 Amp	18.4 mm		90 ns	5	YES
M28F201-90XK3TR	STMicroelectronics	FLASH	AUTOMOTIVE	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS			262144 words	5			8	CHIP CARRIER					1.27 mm	125 Cel			256KX8	256K	-40 Cel					QUAD	R-PQCC-J32	5.25 V	3.56 mm		11.455 mm	Not Qualified		2097152 bit	4.75 V					NOR TYPE		13.995 mm		90 ns	12
M29W010B45N3T	STMicroelectronics	FLASH	AUTOMOTIVE	32	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	16K	20 mA	131072 words	3.3	YES	3.3	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP32,.8,20		Flash Memories		.5 mm	125 Cel			128KX8	128K	-40 Cel	8	YES	TIN LEAD		DUAL	R-PDSO-G32	3.6 V	1.2 mm	100000 Write/Erase Cycles	8 mm	Not Qualified		1048576 bit	3 V		e0			NOR TYPE	.0001 Amp	18.4 mm		45 ns	2.7	YES
M28F410-150WM3	STMicroelectronics	FLASH	AUTOMOTIVE	44	SOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	PARALLEL		16K,8K,96K,128K	60 mA	262144 words	5	NO	5	16	SMALL OUTLINE	SOP44,.63	8	Flash Memories		1.27 mm	125 Cel			256KX16	256K	-40 Cel	1,2,1,3	YES	TIN LEAD		DUAL	R-PDSO-G44					Not Qualified	TOP	4194304 bit			e0			NOR TYPE	.0001 Amp			150 ns		NO
M28F841-100N3R	STMicroelectronics	FLASH	AUTOMOTIVE	40	TSOP1-R	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS			1048576 words	5			8	SMALL OUTLINE, THIN PROFILE					.5 mm	125 Cel			1MX8	1M	-40 Cel					DUAL	R-PDSO-G40	5.5 V	1.2 mm		10 mm	Not Qualified		8388608 bit	4.5 V	100000 PROGRAM/ERASE CYCLES; SECTOR ERASE				NOR TYPE		18.4 mm		100 ns	12
M28F1001-15XB313	STMicroelectronics	FLASH	AUTOMOTIVE	32	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS			131072 words	5			8	IN-LINE					2.54 mm	125 Cel		3-STATE	128KX8	128K	-40 Cel					DUAL	R-PDIP-T32	5.25 V			15.24 mm	Not Qualified		1048576 bit	4.75 V	1000 ERASE/PROGRAM CYCLES				NOR TYPE				150 ns	12
M29F200BB70N3	STMicroelectronics	FLASH	AUTOMOTIVE	48	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	20 mA	131072 words	5	YES	5	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP48,.8,20	8	Flash Memories		.5 mm	125 Cel			128KX16	128K	-40 Cel	1,2,1,3	YES	TIN LEAD	YES	DUAL	R-PDSO-G48	5.5 V	1.2 mm	100000 Write/Erase Cycles	12 mm	Not Qualified	BOTTOM	2097152 bit	4.5 V	BOTTOM BOOT BLOCK	e0			NOR TYPE	.0001 Amp	18.4 mm		70 ns	5	YES
M29F200T-120XM3TR	STMicroelectronics	FLASH	AUTOMOTIVE	44	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS			262144 words	5			8	SMALL OUTLINE		16			1.27 mm	125 Cel			256KX8	256K	-40 Cel					DUAL	R-PDSO-G44	5.25 V	2.62 mm		13.3 mm	Not Qualified	TOP	2097152 bit	4.75 V					NOR TYPE		28.2 mm		120 ns	5
M29F200T-120XN3TR	STMicroelectronics	FLASH	AUTOMOTIVE	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS			262144 words	5			8	SMALL OUTLINE, THIN PROFILE		16			.5 mm	125 Cel			256KX8	256K	-40 Cel					DUAL	R-PDSO-G48	5.25 V	1.2 mm		12 mm	Not Qualified	TOP	2097152 bit	4.75 V					NOR TYPE		18.4 mm		120 ns	5
M28V161-120M3TR	STMicroelectronics	FLASH	AUTOMOTIVE	44	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS			2097152 words	3.3			8	SMALL OUTLINE					1.27 mm	125 Cel			2MX8	2M	-40 Cel					DUAL	R-PDSO-G44	3.6 V	2.62 mm		13.3 mm	Not Qualified		16777216 bit	3 V	100000 PROGRAM/ERASE CYCLES; SECTOR ERASE				NOR TYPE		28.2 mm		120 ns	12
M58BW016DTXXT3	STMicroelectronics	FLASH	AUTOMOTIVE	80	QFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS			524288 words	3			32	FLATPACK					.8 mm	125 Cel			512KX32	512K	-40 Cel					QUAD	R-PQFP-G80	3.6 V	3.4 mm		14 mm	Not Qualified	TOP	16777216 bit	2.7 V	TOP BOOT BLOCK				NOR TYPE		20 mm		80 ns	3
M29F200T-120M3	STMicroelectronics	FLASH	AUTOMOTIVE	44	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	20 mA	131072 words	5	YES	5	16	SMALL OUTLINE	SOP44,.63	8	Flash Memories		1.27 mm	125 Cel		3-STATE	128KX16	128K	-40 Cel	1,2,1,3	YES	TIN LEAD	YES	DUAL	R-PDSO-G44	5.5 V	2.62 mm	100000 Write/Erase Cycles	13.3 mm	Not Qualified	TOP	2097152 bit	4.5 V	TOP BOOT BLOCK	e0			NOR TYPE	.0001 Amp	28.2 mm		120 ns	5	YES
M29F040-90N3R	STMicroelectronics	FLASH	AUTOMOTIVE	32	TSOP1-R	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	64K	60 mA	524288 words	5	YES	5	8	SMALL OUTLINE, THIN PROFILE	TSSOP32,.8,20		Flash Memories	20	.5 mm	125 Cel	YES	3-STATE	512KX8	512K	-40 Cel	8	YES	TIN LEAD		DUAL	R-PDSO-G32	5.5 V	1.2 mm	100000 Write/Erase Cycles	8 mm	Not Qualified		4194304 bit	4.5 V	100000 ERASE/PROGRAM CYCLES; 20 YEARS DATA RETENTION; BLOCK ERASE; BYTE PROGRAMMABLE	e0			NOR TYPE	.0001 Amp	18.4 mm		90 ns	5	YES
M28F410-120WN3	STMicroelectronics	FLASH	AUTOMOTIVE	56	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	PARALLEL		16K,8K,96K,128K	60 mA	262144 words	5	NO	5	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP56,.8,20	8	Flash Memories		.5 mm	125 Cel			256KX16	256K	-40 Cel	1,2,1,3	YES	TIN LEAD		DUAL	R-PDSO-G56					Not Qualified	TOP	4194304 bit			e0			NOR TYPE	.0001 Amp			120 ns		NO
M28F512-90XC3TR	STMicroelectronics	FLASH	AUTOMOTIVE	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS			65536 words	5			8	CHIP CARRIER					1.27 mm	125 Cel		3-STATE	64KX8	64K	-40 Cel					QUAD	R-PQCC-J32	5.25 V	3.56 mm		11.455 mm	Not Qualified		524288 bit	4.75 V					NOR TYPE		13.995 mm		90 ns	12
M28F1001-10XC312	STMicroelectronics	FLASH	AUTOMOTIVE	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS			131072 words	5			8	CHIP CARRIER					1.27 mm	125 Cel		3-STATE	128KX8	128K	-40 Cel					QUAD	R-PQCC-J32	5.25 V	3.56 mm		11.455 mm	Not Qualified		1048576 bit	4.75 V	100 ERASE/PROGRAM CYCLES				NOR TYPE		13.995 mm		100 ns	12
M28V410-180N3TR	STMicroelectronics	FLASH	AUTOMOTIVE	56	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS			524288 words	3.3			8	SMALL OUTLINE, THIN PROFILE					.5 mm	125 Cel			512KX8	512K	-40 Cel					DUAL	R-PDSO-G56	3.6 V	1.2 mm		14 mm	Not Qualified	TOP	4194304 bit	3 V	10000 PROGRAM/ERASE CYCLES; USER CONFIGURABLE AS 256K X 16; BLOCK ERASE				NOR TYPE		18.4 mm		180 ns	12
M28F101-120K3TR	STMicroelectronics	FLASH	AUTOMOTIVE	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS			131072 words	5			8	CHIP CARRIER					1.27 mm	125 Cel		3-STATE	128KX8	128K	-40 Cel					QUAD	R-PQCC-J32	5.5 V	3.56 mm		11.455 mm	Not Qualified		1048576 bit	4.5 V					NOR TYPE		13.995 mm		120 ns	12
M28F410-100XM3TR	STMicroelectronics	FLASH	AUTOMOTIVE	44	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS			524288 words	5			8	SMALL OUTLINE					1.27 mm	125 Cel			512KX8	512K	-40 Cel					DUAL	R-PDSO-G44	5.25 V	2.62 mm		13.3 mm	Not Qualified	TOP	4194304 bit	4.75 V	100000 PROGRAM/ERASE CYCLES; ALSO CONFIGURABLE AS 256K X 16; BLOCK ERASE; TOP BOOT BLOCK				NOR TYPE		28.2 mm		100 ns	12
M28F210-70YM3	STMicroelectronics	FLASH	AUTOMOTIVE	44	SOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	PARALLEL		16K,8K,96K,128K	35 mA	131072 words	5	NO	5	16	SMALL OUTLINE	SOP44,.63	8	Flash Memories		1.27 mm	125 Cel			128KX16	128K	-40 Cel	1,2,1,1	YES	Tin/Lead (Sn/Pb)		DUAL	R-PDSO-G44			100 Write/Erase Cycles		Not Qualified	TOP	2097152 bit			e0			NOR TYPE	.00005 Amp			70 ns		NO
M29F010B120N3F	STMicroelectronics	FLASH	AUTOMOTIVE	32	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	16K	20 mA	131072 words	5	YES	5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP32,.8,20		Flash Memories		.5 mm	125 Cel			128KX8	128K	-40 Cel	8	YES	TIN/TIN BISMUTH		DUAL	R-PDSO-G32	5.5 V	1.2 mm	100000 Write/Erase Cycles	8 mm	Not Qualified		1048576 bit	4.5 V		e3/e6	40	260	NOR TYPE	.0001 Amp	18.4 mm		70 ns	5	YES
M28F256-90B3	STMicroelectronics	FLASH	AUTOMOTIVE	32	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		30 mA	32768 words	5	NO	5	8	IN-LINE	DIP32,.6		Flash Memories		2.54 mm	125 Cel		3-STATE	32KX8	32K	-40 Cel		YES	TIN LEAD		DUAL	R-PDIP-T32	5.5 V	5.08 mm	10000 Write/Erase Cycles	15.24 mm	Not Qualified		262144 bit	4.5 V		e0			NOR TYPE	.0001 Amp	41.91 mm		90 ns	12	NO
M29F002BT55K3F	STMicroelectronics	FLASH	AUTOMOTIVE	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	20 mA	262144 words	5	YES	5	8	CHIP CARRIER	LDCC32,.5X.6		Flash Memories		1.27 mm	125 Cel			256KX8	256K	-40 Cel	1,2,1,3	YES			QUAD	R-PQCC-J32	5.5 V	3.56 mm	100000 Write/Erase Cycles	11.43 mm	Not Qualified	TOP	2097152 bit	4.5 V	TOP BOOT BLOCK		NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.0001 Amp	13.97 mm		55 ns	5	YES
M28F101-90XN3	STMicroelectronics	FLASH	AUTOMOTIVE	32	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		30 mA	131072 words	5	NO	5	8	SMALL OUTLINE, THIN PROFILE	TSSOP32,.8,20		Flash Memories		.5 mm	125 Cel		3-STATE	128KX8	128K	-40 Cel		YES	TIN LEAD		DUAL	R-PDSO-G32	5.25 V	1.2 mm		8 mm	Not Qualified		1048576 bit	4.75 V		e0			NOR TYPE	.00005 Amp	18.4 mm		90 ns	12	NO
M29F100B-70M3	STMicroelectronics	FLASH	AUTOMOTIVE	44	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	20 mA	131072 words	5	YES	5	8	SMALL OUTLINE	SOP44,.63	8	Flash Memories		1.27 mm	125 Cel			128KX8	128K	-40 Cel	1,2,1,1	YES	TIN LEAD	YES	DUAL	R-PDSO-G44	5.5 V	2.62 mm		13.3 mm	Not Qualified	BOTTOM	1048576 bit	4.5 V	CONFG AS 64K X 16; BOTTOM BOOT BLOCK	e0			NOR TYPE	.0001 Amp	28.2 mm		70 ns	5	YES
M28F102-200XN3TR	STMicroelectronics	FLASH	AUTOMOTIVE	40	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	MOS	GULL WING	PARALLEL	ASYNCHRONOUS			65536 words	5			16	SMALL OUTLINE, THIN PROFILE					.5 mm	125 Cel		3-STATE	64KX16	64K	-40 Cel					DUAL	R-PDSO-G40	5.25 V	1.2 mm		10 mm	Not Qualified		1048576 bit	4.75 V					NOR TYPE		12.4 mm		200 ns	12
M29F400B-55M3R	STMicroelectronics	FLASH	AUTOMOTIVE	44	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS			262144 words	5			16	SMALL OUTLINE		8			1.27 mm	125 Cel			256KX16	256K	-40 Cel					DUAL	R-PDSO-G44	5.5 V	2.62 mm		13.3 mm	Not Qualified	BOTTOM	4194304 bit	4.5 V	BOTTOM BOOT BLOCK				NOR TYPE		28.2 mm		55 ns	5
M28F201-150XK3	STMicroelectronics	FLASH	AUTOMOTIVE	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS		30 mA	262144 words	5	NO	5	8	CHIP CARRIER	LDCC32,.5X.6		Flash Memories		1.27 mm	125 Cel			256KX8	256K	-40 Cel		YES	TIN LEAD		QUAD	R-PQCC-J32	5.25 V	3.56 mm		11.455 mm	Not Qualified		2097152 bit	4.75 V		e0			NOR TYPE	.0001 Amp	13.995 mm		150 ns	12	NO
M28V430-150N3TR	STMicroelectronics	FLASH	AUTOMOTIVE	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS			524288 words	3.3			8	SMALL OUTLINE, THIN PROFILE					.5 mm	125 Cel			512KX8	512K	-40 Cel					DUAL	R-PDSO-G48	3.6 V	1.2 mm		12 mm	Not Qualified	TOP	4194304 bit	3 V	10000 PROGRAM/ERASE CYCLES; BLOCK ERASE; USER CONFIGURABLE AS 256K X 16				NOR TYPE		18.4 mm		150 ns	12
M29F200T-55M3	STMicroelectronics	FLASH	AUTOMOTIVE	44	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	20 mA	131072 words	5	YES	5	16	SMALL OUTLINE	SOP44,.63	8	Flash Memories		1.27 mm	125 Cel			128KX16	128K	-40 Cel	1,2,1,3	YES	TIN LEAD	YES	DUAL	R-PDSO-G44	5.5 V	2.62 mm	100000 Write/Erase Cycles	13.3 mm	Not Qualified	TOP	2097152 bit	4.5 V	TOP BOOT BLOCK	e0			NOR TYPE	.0001 Amp	28.2 mm		55 ns	5	YES
M29F040-120XN3R	STMicroelectronics	FLASH	AUTOMOTIVE	32	TSOP1-R	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	64K	60 mA	524288 words	5	YES	5	8	SMALL OUTLINE, THIN PROFILE	TSSOP32,.8,20		Flash Memories	20	.5 mm	125 Cel	YES	3-STATE	512KX8	512K	-40 Cel	8	YES	TIN LEAD		DUAL	R-PDSO-G32	5.25 V	1.2 mm	100000 Write/Erase Cycles	8 mm	Not Qualified		4194304 bit	4.75 V	100000 ERASE/PROGRAM CYCLES; 20 YEARS DATA RETENTION; BLOCK ERASE; BYTE PROGRAMMABLE	e0			NOR TYPE	.0001 Amp	18.4 mm		120 ns	5	YES
M29F040-70N3TR	STMicroelectronics	FLASH	AUTOMOTIVE	32	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	64K	40 mA	524288 words	5	YES	5	8	SMALL OUTLINE, THIN PROFILE	TSSOP32,.8,20		Flash Memories		.5 mm	125 Cel		3-STATE	512KX8	512K	-40 Cel	8	YES	TIN LEAD		DUAL	R-PDSO-G32	5.5 V	1.2 mm	100000 Write/Erase Cycles	8 mm	Not Qualified		4194304 bit	4.5 V		e0			NOR TYPE	.00005 Amp	18.4 mm		70 ns	5	YES
M29F400BB70MT3	STMicroelectronics	FLASH	AUTOMOTIVE	44	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	20 mA	262144 words	5	YES	5	16	SMALL OUTLINE	SOP44,.63	8	Flash Memories		1.27 mm	125 Cel			256KX16	256K	-40 Cel	1,2,1,7	YES	TIN LEAD	YES	DUAL	R-PDSO-G44	5.5 V	3 mm	100000 Write/Erase Cycles	12.6 mm	Not Qualified	BOTTOM	4194304 bit	4.5 V	BOTTOM BOOT BLOCK	e0			NOR TYPE	.0001 Amp	28.5 mm		70 ns	5	YES
M29F400T-90XN3R	STMicroelectronics	FLASH	AUTOMOTIVE	48	TSOP1-R	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS			524288 words	5			8	SMALL OUTLINE, THIN PROFILE		16			.5 mm	125 Cel		3-STATE	512KX8	512K	-40 Cel					DUAL	R-PDSO-G48	5.25 V	1.2 mm		12 mm	Not Qualified	TOP	4194304 bit	4.75 V					NOR TYPE		18.4 mm		90 ns	5
M29F200T-90XN3	STMicroelectronics	FLASH	AUTOMOTIVE	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS			262144 words	5			8	SMALL OUTLINE, THIN PROFILE		16			.5 mm	125 Cel			256KX8	256K	-40 Cel					DUAL	R-PDSO-G48	5.25 V	1.2 mm		12 mm	Not Qualified	TOP	2097152 bit	4.75 V					NOR TYPE		18.4 mm		90 ns	5
M29F002BNB45N3F	STMicroelectronics	FLASH	AUTOMOTIVE	32	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	20 mA	262144 words	5	YES	5	8	SMALL OUTLINE, THIN PROFILE	TSSOP32,.8,20		Flash Memories		.5 mm	125 Cel			256KX8	256K	-40 Cel	1,2,1,3	YES	TIN/TIN BISMUTH		DUAL	R-PDSO-G32	5.5 V	1.2 mm	100000 Write/Erase Cycles	8 mm	Not Qualified	BOTTOM	2097152 bit	4.5 V	BOTTOM BOOT BLOCK	e3/e6	40	260	NOR TYPE	.0001 Amp	18.4 mm		45 ns	5	YES
M28F220-70XN3TR	STMicroelectronics	FLASH	AUTOMOTIVE	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS			262144 words	5			8	SMALL OUTLINE, THIN PROFILE		16			.5 mm	125 Cel			256KX8	256K	-40 Cel					DUAL	R-PDSO-G48	5.25 V	1.2 mm		12 mm	Not Qualified	BOTTOM	2097152 bit	4.75 V	BOTTOM BOOT BLOCK				NOR TYPE		18.4 mm		70 ns	12
M58BW016DB100T3FT	STMicroelectronics	FLASH	AUTOMOTIVE	80	QFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	2K,16K	30 mA	524288 words	3	NO	2.5/3.3,3/3.3	32	FLATPACK	QFP80,.7X.9,32		Flash Memories		.8 mm	125 Cel			512KX32	512K	-40 Cel	8,31	YES	TIN LEAD		QUAD	R-PQFP-G80	3.6 V	3.4 mm		14 mm	Not Qualified	BOTTOM	16777216 bit	2.7 V	SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE; BOTTOM BOOT BLOCK	e0			NOR TYPE	.000005 Amp	20 mm	YES	100 ns	3	NO
M28F512-20XB3	STMicroelectronics	FLASH	AUTOMOTIVE	32	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		30 mA	65536 words	5	NO	5	8	IN-LINE	DIP32,.6		Flash Memories		2.54 mm	125 Cel		3-STATE	64KX8	64K	-40 Cel		YES	TIN LEAD		DUAL	R-PDIP-T32	5.25 V	5.08 mm	10000 Write/Erase Cycles	15.24 mm	Not Qualified		524288 bit	4.75 V		e0			NOR TYPE	.0001 Amp	41.91 mm		20 ns	12	NO
M29F200B-120M3TR	STMicroelectronics	FLASH	AUTOMOTIVE	44	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	20 mA	131072 words	5	YES	5	16	SMALL OUTLINE	SOP44,.63	8	Flash Memories		1.27 mm	125 Cel		3-STATE	128KX16	128K	-40 Cel	1,2,1,3	YES	TIN LEAD	YES	DUAL	R-PDSO-G44	5.5 V	2.62 mm	100000 Write/Erase Cycles	13.3 mm	Not Qualified	BOTTOM	2097152 bit	4.5 V	BOTTOM BOOT BLOCK	e0			NOR TYPE	.0001 Amp	28.2 mm		120 ns	5	YES
M29F010B35XN3	STMicroelectronics	FLASH	AUTOMOTIVE	32	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	PARALLEL		16K	20 mA	131072 words	5	YES	5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP32,.8,20		Flash Memories		.5 mm	125 Cel			128KX8	128K	-40 Cel	8	YES	Tin/Lead (Sn/Pb)		DUAL	R-PDSO-G32			100000 Write/Erase Cycles		Not Qualified		1048576 bit			e0			NOR TYPE	.0001 Amp			35 ns		YES
M29F002BNT120K3	STMicroelectronics	FLASH	AUTOMOTIVE	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	20 mA	262144 words	5	YES	5	8	CHIP CARRIER	LDCC32,.5X.6		Flash Memories		1.27 mm	125 Cel			256KX8	256K	-40 Cel	1,2,1,3	YES	TIN LEAD		QUAD	R-PQCC-J32	5.5 V	3.56 mm	100000 Write/Erase Cycles	11.43 mm	Not Qualified	TOP	2097152 bit	4.5 V	TOP BOOT BLOCK	e0			NOR TYPE	.0001 Amp	13.97 mm		70 ns	5	YES
M29F400BT55MT3	STMicroelectronics	FLASH	AUTOMOTIVE	44	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	20 mA	262144 words	5	YES	5	16	SMALL OUTLINE	SOP44,.63	8	Flash Memories		1.27 mm	125 Cel			256KX16	256K	-40 Cel	1,2,1,7	YES	TIN LEAD	YES	DUAL	R-PDSO-G44	5.5 V	3 mm	100000 Write/Erase Cycles	12.6 mm	Not Qualified	TOP	4194304 bit	4.5 V	TOP BOOT BLOCK	e0			NOR TYPE	.0001 Amp	28.5 mm		55 ns	5	YES

Flash Memory

Flash memory is a type of non-volatile computer memory that is commonly used in digital devices such as USB drives, solid-state drives, and digital cameras. It is a type of EEPROM (Electrically Erasable Programmable Read-Only Memory) that allows data to be erased and reprogrammed in blocks instead of one byte at a time. Flash memory uses a floating gate transistor to store data, which allows it to retain information even when the power is turned off.

Flash memory is widely used in digital devices because of its high capacity, small size, and fast access times. It is also more durable than other types of memory, such as hard disk drives, because it has no moving parts. This makes it ideal for use in portable devices that may be subject to physical shock or vibration.

There are two types of flash memory: NOR flash and NAND flash. NOR flash is faster than NAND flash, but it has lower density and higher cost per bit. NOR flash is typically used for code storage, such as firmware or boot code, because it provides faster access times. NAND flash has higher density and lower cost per bit, which makes it ideal for data storage applications.

Flash memory has a limited lifespan, as it can only be erased and reprogrammed a limited number of times. This is because the process of erasing and reprogramming the memory causes wear and tear on the floating gate transistor. However, modern flash memory devices have a sophisticated wear-leveling algorithm that distributes writes evenly across the memory, which extends the lifespan of the device.