AUTOMOTIVE Flash Memory 2,400+

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Screening Level	Terminal Form	Parallel or Serial	Operating Mode	Sector Size (Words)	Maximum Supply Current	No. of Words	Nominal Supply Voltage / Vsup (V)	Toggle Bit	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Alternate Memory Width	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Reverse Pinout	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	No. of Sectors/Size	Command User Interface	Terminal Finish	Ready or Busy	Terminal Position	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Endurance	Width	Qualification	Boot Block	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	Page Size (words)	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Type	Maximum Standby Current	Length	Common Flash Interface	Maximum Access Time	Programming Voltage (V)	Data Polling
M29F002BNT90N3	STMicroelectronics	FLASH	AUTOMOTIVE	32	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	20 mA	262144 words	5	YES	5	8	SMALL OUTLINE, THIN PROFILE	TSSOP32,.8,20		Flash Memories	.5 mm	125 Cel			256KX8	256K	-40 Cel	1,2,1,3	YES	TIN LEAD		DUAL	R-PDSO-G32		5.5 V	1.2 mm	100000 Write/Erase Cycles	8 mm	Not Qualified	TOP	2097152 bit	4.5 V	TOP BOOT BLOCK		e0			NOR TYPE	.0001 Amp	18.4 mm		70 ns	5	YES
M58BW16FT4T3T	STMicroelectronics	FLASH	AUTOMOTIVE	80	QFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	PARALLEL	SYNCHRONOUS	2K,16K	50 mA	1048576 words	3.3	NO	2.5/3.3,3/3.3	32	FLATPACK	QFP80,.7X.9,32		Flash Memories	.8 mm	125 Cel			1MX32	1M	-40 Cel	8,31	YES			QUAD	R-PQFP-G80		3.6 V	3.4 mm		14 mm	Not Qualified	TOP	33554432 bit	2.7 V						NOR TYPE	.00015 Amp	20 mm	YES	45 ns	3.3	NO
M29F040-70XN3	STMicroelectronics	FLASH	AUTOMOTIVE	32	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	64K	60 mA	524288 words	5	YES	5	8	SMALL OUTLINE, THIN PROFILE	TSSOP32,.8,20		Flash Memories	.5 mm	125 Cel		3-STATE	512KX8	512K	-40 Cel	8	YES	TIN LEAD		DUAL	R-PDSO-G32		5.25 V	1.2 mm	100000 Write/Erase Cycles	8 mm	Not Qualified		4194304 bit	4.75 V			e0			NOR TYPE	.0001 Amp	18.4 mm		70 ns	5	YES
M28F101-12XP3	STMicroelectronics	FLASH	AUTOMOTIVE	32	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		30 mA	131072 words	5	NO	5	8	IN-LINE	DIP32,.6		Flash Memories	2.54 mm	125 Cel			128KX8	128K	-40 Cel		YES	TIN LEAD		DUAL	R-PDIP-T32		5.25 V	5.08 mm		15.24 mm	Not Qualified		1048576 bit	4.75 V	BULK ERASE		e0			NOR TYPE	.0001 Amp	41.91 mm		120 ns	12	NO
M29W160FB80ZA3F	STMicroelectronics	FLASH	AUTOMOTIVE	48	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	10 mA	1048576 words	3	YES	3/3.3	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA48,6X8,32	8	Flash Memories	.8 mm	125 Cel			1MX16	1M	-40 Cel	1,2,1,31	YES		YES	BOTTOM	R-PBGA-B48		3.6 V	1.2 mm		6 mm	Not Qualified	BOTTOM	16777216 bit	2.7 V				40	260	NOR TYPE	.0001 Amp	8 mm	YES	80 ns	3	YES
M28F210-80M3TR	STMicroelectronics	FLASH	AUTOMOTIVE	44	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS			262144 words	5			8	SMALL OUTLINE				1.27 mm	125 Cel			256KX8	256K	-40 Cel					DUAL	R-PDSO-G44		5.5 V	2.62 mm		13.3 mm	Not Qualified	TOP	2097152 bit	4.5 V	100000 PROGRAM/ERASE CYCLES; USER CONFIGURABLE AS 128K X 16; BLOCK ERASE; TOP BOOT BLOCK					NOR TYPE		28.2 mm		80 ns	12
M29F040-70K3	STMicroelectronics	FLASH	AUTOMOTIVE	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	64K	60 mA	524288 words	5	YES	5	8	CHIP CARRIER	LDCC32,.5X.6		Flash Memories	1.27 mm	125 Cel		3-STATE	512KX8	512K	-40 Cel	8	YES	TIN LEAD		QUAD	R-PQCC-J32		5.5 V	3.56 mm	100000 Write/Erase Cycles	11.455 mm	Not Qualified		4194304 bit	4.5 V			e0			NOR TYPE	.0001 Amp	13.995 mm		70 ns	5	YES
M29F040-70K3TR	STMicroelectronics	FLASH	AUTOMOTIVE	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	64K	40 mA	524288 words	5	YES	5	8	CHIP CARRIER	LDCC32,.5X.6		Flash Memories	1.27 mm	125 Cel		3-STATE	512KX8	512K	-40 Cel	8	YES	TIN LEAD		QUAD	R-PQCC-J32		5.5 V	3.56 mm	100000 Write/Erase Cycles	11.455 mm	Not Qualified		4194304 bit	4.5 V			e0			NOR TYPE	.00005 Amp	13.995 mm		70 ns	5	YES
M29F040B70N3F	STMicroelectronics	FLASH	AUTOMOTIVE	32	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	64K	20 mA	524288 words	5	YES	5	8	SMALL OUTLINE, THIN PROFILE	TSSOP32,.8,20		Flash Memories	.5 mm	125 Cel			512KX8	512K	-40 Cel	8	YES	TIN/TIN BISMUTH		DUAL	R-PDSO-G32		5.5 V	1.2 mm	100000 Write/Erase Cycles	8 mm	Not Qualified		4194304 bit	4.5 V			e3/e6	40	260	NOR TYPE	.0001 Amp	18.4 mm		70 ns	5	YES
M29F400BT90MT3	STMicroelectronics	FLASH	AUTOMOTIVE	44	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	20 mA	262144 words	5	YES	5	16	SMALL OUTLINE	SOP44,.63	8	Flash Memories	1.27 mm	125 Cel			256KX16	256K	-40 Cel	1,2,1,7	YES	TIN LEAD	YES	DUAL	R-PDSO-G44		5.5 V	3 mm	100000 Write/Erase Cycles	12.6 mm	Not Qualified	TOP	4194304 bit	4.5 V	TOP BOOT BLOCK		e0			NOR TYPE	.0001 Amp	28.5 mm		70 ns	5	YES
M28F201-70N3RTR	STMicroelectronics	FLASH	AUTOMOTIVE	32	TSOP1-R	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS			262144 words	5			8	SMALL OUTLINE, THIN PROFILE				.5 mm	125 Cel		3-STATE	256KX8	256K	-40 Cel					DUAL	R-PDSO-G32		5.5 V	1.2 mm		8 mm	Not Qualified		2097152 bit	4.5 V						NOR TYPE		18.4 mm		70 ns	12
M29F002BNB55P3	STMicroelectronics	FLASH	AUTOMOTIVE	32	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	20 mA	262144 words	5	YES	5	8	IN-LINE	DIP32,.6		Flash Memories	2.54 mm	125 Cel			256KX8	256K	-40 Cel	1,2,1,3	YES	MATTE TIN		DUAL	R-PDIP-T32		5.5 V	5.08 mm	100000 Write/Erase Cycles	15.24 mm	Not Qualified	BOTTOM	2097152 bit	4.5 V	BOTTOM BOOT BLOCK		e3			NOR TYPE	.0001 Amp	41.91 mm		55 ns	5	YES
M28F210-100XN3TR	STMicroelectronics	FLASH	AUTOMOTIVE	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS			262144 words	5			8	SMALL OUTLINE, THIN PROFILE				.5 mm	125 Cel			256KX8	256K	-40 Cel					DUAL	R-PDSO-G48		5.25 V	1.2 mm		12 mm	Not Qualified	TOP	2097152 bit	4.75 V	100000 PROGRAM/ERASE CYCLES; USER CONFIGURABLE AS 128K X 16; BLOCK ERASE; TOP BOOT BLOCK					NOR TYPE		18.4 mm		100 ns	12
M29W800FT70ZA3F	STMicroelectronics	FLASH	AUTOMOTIVE	48	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	20 mA	524288 words	3.3	YES	3.3	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA48,6X8,32	8	Flash Memories	.8 mm	125 Cel			512KX16	512K	-40 Cel	1,2,1,15	YES	MATTE TIN	YES	BOTTOM	R-PBGA-B48	1	3.6 V	1.2 mm		6 mm	Not Qualified	TOP	8388608 bit	3 V	TOP BOOT BLOCK		e3			NOR TYPE	.0001 Amp	8 mm	YES	70 ns	3	YES
M29W010B90K3	STMicroelectronics	FLASH	AUTOMOTIVE	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	16K	20 mA	131072 words	3.3	YES	3/3.3	8	CHIP CARRIER	LDCC32,.5X.6		Flash Memories	1.27 mm	125 Cel			128KX8	128K	-40 Cel	8	YES	TIN LEAD		QUAD	R-PQCC-J32		3.6 V	3.56 mm	100000 Write/Erase Cycles	11.43 mm	Not Qualified		1048576 bit	2.7 V			e0			NOR TYPE	.0001 Amp	13.97 mm		90 ns	2.7	YES
M28F101-200N3TR	STMicroelectronics	FLASH	AUTOMOTIVE	32	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS			131072 words	5			8	SMALL OUTLINE, THIN PROFILE				.5 mm	125 Cel		3-STATE	128KX8	128K	-40 Cel					DUAL	R-PDSO-G32		5.5 V	1.2 mm		8 mm	Not Qualified		1048576 bit	4.5 V						NOR TYPE		18.4 mm		200 ns	12
M29F400B-120XN3TR	STMicroelectronics	FLASH	AUTOMOTIVE	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS			524288 words	5			8	SMALL OUTLINE, THIN PROFILE		16		.5 mm	125 Cel		3-STATE	512KX8	512K	-40 Cel					DUAL	R-PDSO-G48		5.25 V	1.2 mm		12 mm	Not Qualified	BOTTOM	4194304 bit	4.75 V						NOR TYPE		18.4 mm		120 ns	5
M29F002BB70K3F	STMicroelectronics	FLASH	AUTOMOTIVE	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	20 mA	262144 words	5	YES	5	8	CHIP CARRIER	LDCC32,.5X.6		Flash Memories	1.27 mm	125 Cel			256KX8	256K	-40 Cel	1,2,1,3	YES			QUAD	R-PQCC-J32		5.5 V	3.56 mm	100000 Write/Erase Cycles	11.43 mm	Not Qualified	BOTTOM	2097152 bit	4.5 V	BOTTOM BOOT BLOCK			NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.0001 Amp	13.97 mm		70 ns	5	YES
M28V440-150N3TR	STMicroelectronics	FLASH	AUTOMOTIVE	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS			524288 words	3.3			8	SMALL OUTLINE, THIN PROFILE				.5 mm	125 Cel			512KX8	512K	-40 Cel					DUAL	R-PDSO-G48		3.6 V	1.2 mm		12 mm	Not Qualified	BOTTOM	4194304 bit	3 V	10000 PROGRAM/ERASE CYCLES; BLOCK ERASE; USER CONFIGURABLE AS 256K X 16					NOR TYPE		18.4 mm		150 ns	12
M29F100BT70M3T	STMicroelectronics	FLASH	AUTOMOTIVE	44	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	20 mA	65536 words	5	YES	5	16	SMALL OUTLINE	SOP44,.63	8	Flash Memories	1.27 mm	125 Cel			64KX16	64K	-40 Cel	1,2,1,1	YES	TIN LEAD	YES	DUAL	R-PDSO-G44		5.5 V	2.62 mm		13.3 mm	Not Qualified	TOP	1048576 bit	4.5 V	TOP BOOT BLOCK		e0			NOR TYPE	.0001 Amp	28.2 mm		70 ns	5	YES
M29F400B-90M3	STMicroelectronics	FLASH	AUTOMOTIVE	44	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	20 mA	262144 words	5	YES	5	16	SMALL OUTLINE	SOP44,.63	8	Flash Memories	1.27 mm	125 Cel		3-STATE	256KX16	256K	-40 Cel	1,2,1,7	YES	TIN LEAD	YES	DUAL	R-PDSO-G44		5.5 V	2.62 mm	100000 Write/Erase Cycles	13.3 mm	Not Qualified	BOTTOM	4194304 bit	4.5 V	BOTTOM BOOT BLOCK		e0			NOR TYPE	.0001 Amp	28.2 mm		90 ns	5	YES
M58BW016DB7T3FT	STMicroelectronics	FLASH	AUTOMOTIVE	80	QFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	2K,16K	30 mA	524288 words	3	NO	2.5/3.3,3/3.3	32	FLATPACK	QFP80,.7X.9,32		Flash Memories	.8 mm	125 Cel			512KX32	512K	-40 Cel	8,31	YES			QUAD	R-PQFP-G80	1	3.6 V	3.4 mm		14 mm	Not Qualified	BOTTOM	16777216 bit	2.7 V	SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE; BOTTOM BOOT BLOCK					NOR TYPE	.000005 Amp	20 mm	YES	70 ns	3	NO
M29F200BT45N3	STMicroelectronics	FLASH	AUTOMOTIVE	48	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	20 mA	131072 words	5	YES	5	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP48,.8,20	8	Flash Memories	.5 mm	125 Cel			128KX16	128K	-40 Cel	1,2,1,3	YES	TIN LEAD	YES	DUAL	R-PDSO-G48		5.5 V	1.2 mm	100000 Write/Erase Cycles	12 mm	Not Qualified	TOP	2097152 bit	4.5 V	TOP BOOT BLOCK		e0			NOR TYPE	.0001 Amp	18.4 mm		45 ns	5	YES
M29F002BT55K3T	STMicroelectronics	FLASH	AUTOMOTIVE	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	20 mA	262144 words	5	YES	5	8	CHIP CARRIER	LDCC32,.5X.6		Flash Memories	1.27 mm	125 Cel			256KX8	256K	-40 Cel	1,2,1,3	YES	TIN LEAD		QUAD	R-PQCC-J32		5.5 V	3.56 mm	100000 Write/Erase Cycles	11.43 mm	Not Qualified	TOP	2097152 bit	4.5 V	TOP BOOT BLOCK		e0			NOR TYPE	.0001 Amp	13.97 mm		55 ns	5	YES
M28F151-120N3	STMicroelectronics	FLASH	AUTOMOTIVE	32	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		GULL WING	PARALLEL			30 mA	196608 words	5	NO	5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP32,.8,20		Flash Memories	.5 mm	125 Cel			192KX8	192K	-40 Cel		YES	TIN LEAD		DUAL	R-PDSO-G32						Not Qualified		1572864 bit				e0			NOR TYPE	.0001 Amp			120 ns		NO
M28F211-120XN3TR	STMicroelectronics	FLASH	AUTOMOTIVE	40	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS			262144 words	5			8	SMALL OUTLINE, THIN PROFILE				.5 mm	125 Cel			256KX8	256K	-40 Cel					DUAL	R-PDSO-G40		5.25 V	1.2 mm		10 mm	Not Qualified	TOP	2097152 bit	4.75 V	100000 PROGRAM/ERASE CYCLES; BLOCK ERASE; TOP BOOT BLOCK					NOR TYPE		18.4 mm		120 ns	12
M58BW032BB45T3T	STMicroelectronics	FLASH	AUTOMOTIVE	80	QFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	4K,2K,16K		1048576 words	3.3	NO	3.3	32	FLATPACK	QFP80,.7X.9,32		Flash Memories	.8 mm	125 Cel			1MX32	1M	-40 Cel	4,8,62	YES			QUAD	R-PQFP-G80		3.6 V	3.4 mm		14 mm	Not Qualified	BOTTOM	33554432 bit	3 V	SYNCHRONOUS BURST MODE OPERATION POSSIBLE; BOTTOM BOOT BLOCK	4				NOR TYPE	.0001 Amp	20 mm	YES	45 ns	3.3	NO
M28F1001-12XC312	STMicroelectronics	FLASH	AUTOMOTIVE	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS			131072 words	5			8	CHIP CARRIER				1.27 mm	125 Cel		3-STATE	128KX8	128K	-40 Cel					QUAD	R-PQCC-J32		5.25 V	3.56 mm		11.455 mm	Not Qualified		1048576 bit	4.75 V	100 ERASE/PROGRAM CYCLES					NOR TYPE		13.995 mm		120 ns	12
M28F220-120N3	STMicroelectronics	FLASH	AUTOMOTIVE	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,96K,128K	35 mA	262144 words	5	NO	5	8	SMALL OUTLINE, THIN PROFILE	TSSOP48,.8,20	16	Flash Memories	.5 mm	125 Cel			256KX8	256K	-40 Cel	1,2,1,1	YES	TIN LEAD		DUAL	R-PDSO-G48		5.5 V	1.2 mm	100000 Write/Erase Cycles	12 mm	Not Qualified	BOTTOM	2097152 bit	4.5 V	BOTTOM BOOT BLOCK		e0			NOR TYPE	.00005 Amp	18.4 mm		120 ns	12	NO
M29F100T-150N3RTR	STMicroelectronics	FLASH	AUTOMOTIVE	48	TSOP1-R	RECTANGULAR	PLASTIC/EPOXY	YES	1	MOS		GULL WING	PARALLEL	ASYNCHRONOUS			131072 words	5			8	SMALL OUTLINE, THIN PROFILE		16		.5 mm	125 Cel		3-STATE	128KX8	128K	-40 Cel					DUAL	R-PDSO-G48		5.5 V	1.2 mm		12 mm	Not Qualified	TOP	1048576 bit	4.5 V						NOR TYPE		18.4 mm		150 ns	5
M28F420-100XM3TR	STMicroelectronics	FLASH	AUTOMOTIVE	44	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS			524288 words	5			8	SMALL OUTLINE				1.27 mm	125 Cel			512KX8	512K	-40 Cel					DUAL	R-PDSO-G44		5.25 V	2.62 mm		13.3 mm	Not Qualified	BOTTOM	4194304 bit	4.75 V	100000 PROGRAM/ERASE CYCLES; ALSO CONFIGURABLE AS 256K X 16; BLOCK ERASE; BOTTOM BOOT BLOCK					NOR TYPE		28.2 mm		100 ns	12
M58BW016DT90T3FT	STMicroelectronics	FLASH	AUTOMOTIVE	80	QFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	2K,16K	30 mA	524288 words	3	NO	2.5/3.3,3/3.3	32	FLATPACK	QFP80,.7X.9,32		Flash Memories	.8 mm	125 Cel			512KX32	512K	-40 Cel	8,31	YES	TIN LEAD		QUAD	R-PQFP-G80		3.6 V	3.4 mm		14 mm	Not Qualified	TOP	16777216 bit	2.7 V	SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE; TOP BOOT BLOCK		e0			NOR TYPE	.000005 Amp	20 mm	YES	90 ns	3	NO
M28F201-150N3R	STMicroelectronics	FLASH	AUTOMOTIVE	32	TSOP1-R	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS		30 mA	262144 words	5	NO	5	8	SMALL OUTLINE, THIN PROFILE	TSSOP32,.8,20		Flash Memories	.5 mm	125 Cel	YES	3-STATE	256KX8	256K	-40 Cel		YES	TIN LEAD		DUAL	R-PDSO-G32		5.5 V	1.2 mm		8 mm	Not Qualified		2097152 bit	4.5 V			e0			NOR TYPE	.0001 Amp	18.4 mm		150 ns	12	NO
M28F220-100YM3	STMicroelectronics	FLASH	AUTOMOTIVE	44	SOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		GULL WING	PARALLEL		16K,8K,96K,128K	35 mA	131072 words	5	NO	5	16	SMALL OUTLINE	SOP44,.63	8	Flash Memories	1.27 mm	125 Cel			128KX16	128K	-40 Cel	1,2,1,1	YES	Tin/Lead (Sn/Pb)		DUAL	R-PDSO-G44				100 Write/Erase Cycles		Not Qualified	BOTTOM	2097152 bit				e0			NOR TYPE	.00005 Amp			100 ns		NO
M29F040-70XK3	STMicroelectronics	FLASH	AUTOMOTIVE	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	64K	60 mA	524288 words	5	YES	5	8	CHIP CARRIER	LDCC32,.5X.6		Flash Memories	1.27 mm	125 Cel		3-STATE	512KX8	512K	-40 Cel	8	YES	TIN LEAD		QUAD	R-PQCC-J32		5.25 V	3.56 mm	100000 Write/Erase Cycles	11.455 mm	Not Qualified		4194304 bit	4.75 V			e0			NOR TYPE	.0001 Amp	13.995 mm		70 ns	5	YES
M29F100BT90M3	STMicroelectronics	FLASH	AUTOMOTIVE	44	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	20 mA	65536 words	5	YES	5	16	SMALL OUTLINE	SOP44,.63	8	Flash Memories	1.27 mm	125 Cel			64KX16	64K	-40 Cel	1,2,1,1	YES	TIN LEAD	YES	DUAL	R-PDSO-G44		5.5 V	2.62 mm		13.3 mm	Not Qualified	TOP	1048576 bit	4.5 V	TOP BOOT BLOCK		e0			NOR TYPE	.0001 Amp	28.2 mm		70 ns	5	YES
M29F010B120P3T	STMicroelectronics	FLASH	AUTOMOTIVE	32	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS			131072 words	5			8	IN-LINE				2.54 mm	125 Cel			128KX8	128K	-40 Cel					DUAL	R-PDIP-T32		5.5 V	5.08 mm		15.24 mm	Not Qualified		1048576 bit	4.5 V						NOR TYPE		41.91 mm		70 ns	5
M58BF008B100D3T	STMicroelectronics	FLASH	AUTOMOTIVE	80	QFP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		GULL WING	PARALLEL		8K	25 mA	262144 words		NO	3.3,5	32	FLATPACK	QFP80,.7X.9,32		Flash Memories	.8 mm	125 Cel			256KX32	256K	-40 Cel	32	YES	Tin/Lead (Sn85Pb15)		QUAD	R-PQFP-G80						Not Qualified		8388608 bit				e0			NOR TYPE	.000005 Amp			100 ns		NO
M29F200BT70M3F	STMicroelectronics	FLASH	AUTOMOTIVE	44	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	20 mA	131072 words	5	YES	5	16	SMALL OUTLINE	SOP44,.63	8	Flash Memories	1.27 mm	125 Cel			128KX16	128K	-40 Cel	1,2,1,3	YES		YES	DUAL	R-PDSO-G44		5.5 V	3 mm	100000 Write/Erase Cycles	12.6 mm	Not Qualified	TOP	2097152 bit	4.5 V	TOP BOOT BLOCK			40	245	NOR TYPE	.0001 Amp	28.5 mm		70 ns	5	YES
M28F411-70XN3TR	STMicroelectronics	FLASH	AUTOMOTIVE	40	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS			524288 words	5			8	SMALL OUTLINE, THIN PROFILE				.5 mm	125 Cel			512KX8	512K	-40 Cel					DUAL	R-PDSO-G40		5.25 V	1.2 mm		10 mm	Not Qualified	TOP	4194304 bit	4.75 V	100000 PROGRAM/ERASE CYCLES; TOP BOOT BLOCK					NOR TYPE		18.4 mm		70 ns	12
M28F151B-150K3TR	STMicroelectronics	FLASH	AUTOMOTIVE	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	MOS		J BEND	PARALLEL	ASYNCHRONOUS			196608 words	5			8	CHIP CARRIER				1.27 mm	125 Cel		3-STATE	192KX8	192K	-40 Cel					QUAD	R-PQCC-J32		5.5 V	3.56 mm		11.455 mm	Not Qualified	BOTTOM	1572864 bit	4.5 V						NOR TYPE		13.995 mm		150 ns	12
M58BW016FB80T3FT	STMicroelectronics	FLASH	AUTOMOTIVE	80	QFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	2K,16K	30 mA	524288 words	3	NO	2.5/3.3,3/3.3	32	FLATPACK	QFP80,.7X.9,32		Flash Memories	.8 mm	125 Cel			512KX32	512K	-40 Cel	8,31	YES			QUAD	R-PQFP-G80		3.6 V	3.4 mm		14 mm	Not Qualified	BOTTOM	16777216 bit	2.7 V	SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE; BOTTOM BOOT BLOCK			NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.000005 Amp	20 mm	YES	80 ns	3	NO
M29F400BB55M3F	STMicroelectronics	FLASH	AUTOMOTIVE	44	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	20 mA	262144 words	5	YES	5	16	SMALL OUTLINE	SOP44,.63	8	Flash Memories	1.27 mm	125 Cel			256KX16	256K	-40 Cel	1,2,1,7	YES		YES	DUAL	R-PDSO-G44		5.5 V	2.62 mm	100000 Write/Erase Cycles	13.3 mm	Not Qualified	BOTTOM	4194304 bit	4.5 V	BOTTOM BOOT BLOCK			40	245	NOR TYPE	.0001 Amp	28.2 mm		55 ns	5	YES
M29F200T-120XN3	STMicroelectronics	FLASH	AUTOMOTIVE	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS			262144 words	5			8	SMALL OUTLINE, THIN PROFILE		16		.5 mm	125 Cel			256KX8	256K	-40 Cel					DUAL	R-PDSO-G48		5.25 V	1.2 mm		12 mm	Not Qualified	TOP	2097152 bit	4.75 V						NOR TYPE		18.4 mm		120 ns	5
M58BW016BB100ZA3F	STMicroelectronics	FLASH	AUTOMOTIVE	80	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	2K,16K	30 mA	524288 words	3	NO	2.5/3.3,3/3.3	32	GRID ARRAY, LOW PROFILE	BGA80,8X10,40		Flash Memories	1 mm	125 Cel			512KX32	512K	-40 Cel	8,31	YES	Tin/Silver/Copper (Sn95.5Ag4.0Cu0.5)		BOTTOM	R-PBGA-B80		3.6 V	1.7 mm		10 mm	Not Qualified	BOTTOM	16777216 bit	2.7 V	SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE; BOTTOM BOOT BLOCK		e1			NOR TYPE	.000005 Amp	12 mm	YES	100 ns	3	NO
M28F256-20XF312	STMicroelectronics	FLASH	AUTOMOTIVE	32	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS			32768 words	5			8	IN-LINE, WINDOW				2.54 mm	125 Cel		3-STATE	32KX8	32K	-40 Cel					DUAL	R-GDIP-T32		5.25 V	5.72 mm		15.24 mm	Not Qualified		262144 bit	4.75 V	100 ERASE/PROGRAM CYCLES					NOR TYPE		41.885 mm		200 ns	12
M28F201-120XK3TR	STMicroelectronics	FLASH	AUTOMOTIVE	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS			262144 words	5			8	CHIP CARRIER				1.27 mm	125 Cel			256KX8	256K	-40 Cel					QUAD	R-PQCC-J32		5.25 V	3.56 mm		11.455 mm	Not Qualified		2097152 bit	4.75 V						NOR TYPE		13.995 mm		120 ns	12
M29F100B-90XM3TR	STMicroelectronics	FLASH	AUTOMOTIVE	44	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	20 mA	131072 words	5	YES	5	8	SMALL OUTLINE	SOP44,.63	8	Flash Memories	1.27 mm	125 Cel			128KX8	128K	-40 Cel	1,2,1,1	YES	TIN LEAD	YES	DUAL	R-PDSO-G44		5.25 V	2.62 mm		13.3 mm	Not Qualified	BOTTOM	1048576 bit	4.75 V	CONFG AS 64K X 16; BOTTOM BOOT BLOCK		e0			NOR TYPE	.0001 Amp	28.2 mm		90 ns	5	YES

Flash Memory

Flash memory is a type of non-volatile computer memory that is commonly used in digital devices such as USB drives, solid-state drives, and digital cameras. It is a type of EEPROM (Electrically Erasable Programmable Read-Only Memory) that allows data to be erased and reprogrammed in blocks instead of one byte at a time. Flash memory uses a floating gate transistor to store data, which allows it to retain information even when the power is turned off.

Flash memory is widely used in digital devices because of its high capacity, small size, and fast access times. It is also more durable than other types of memory, such as hard disk drives, because it has no moving parts. This makes it ideal for use in portable devices that may be subject to physical shock or vibration.

There are two types of flash memory: NOR flash and NAND flash. NOR flash is faster than NAND flash, but it has lower density and higher cost per bit. NOR flash is typically used for code storage, such as firmware or boot code, because it provides faster access times. NAND flash has higher density and lower cost per bit, which makes it ideal for data storage applications.

Flash memory has a limited lifespan, as it can only be erased and reprogrammed a limited number of times. This is because the process of erasing and reprogramming the memory causes wear and tear on the floating gate transistor. However, modern flash memory devices have a sophisticated wear-leveling algorithm that distributes writes evenly across the memory, which extends the lifespan of the device.