INDUSTRIAL Flash Memory 2,400+

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Screening Level	Terminal Form	Parallel or Serial	Operating Mode	Sector Size (Words)	Maximum Supply Current	No. of Words	Nominal Supply Voltage / Vsup (V)	Toggle Bit	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Alternate Memory Width	Sub-Category	Minimum Data Retention Time	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	No. of Sectors/Size	Command User Interface	Terminal Finish	Ready or Busy	Terminal Position	No. of Ports	Write Protection	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Endurance	Maximum Clock Frequency (fCLK)	Width	Qualification	Maximum Write Cycle Time (tWC)	Serial Bus Type	Boot Block	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	Page Size (words)	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Type	Maximum Standby Current	Length	Common Flash Interface	Maximum Access Time	Programming Voltage (V)	Data Polling
SST26VF016BT-104V/MF	Microchip Technology	FLASH	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	NO LEAD	SERIAL	SYNCHRONOUS		25 mA	16777216 words	3			1	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.25			100	1.27 mm	105 Cel	3-STATE	16MX1	16M	-40 Cel			MATTE TIN		DUAL	1	HARDWARE/SOFTWARE	R-PDSO-N8		3.6 V	.8 mm	100000 Write/Erase Cycles	104 MHz	5 mm			SPI		16777216 bit	2.7 V			e3			NOR TYPE	.000025 Amp	6 mm			3
SST39VF010-70-4I-NHE	Microchip Technology	FLASH	INDUSTRIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	4K	30 mA	131072 words	3	YES	3/3.3	8	CHIP CARRIER	LDCC32,.5X.6		Flash Memories	100	1.27 mm	85 Cel	3-STATE	128KX8	128K	-40 Cel	32	YES	Matte Tin (Sn)		QUAD	1		R-PQCC-J32	3	3.6 V	2.8448 mm	100000 Write/Erase Cycles		11.43 mm	Not Qualified				1048576 bit	2.7 V			e3	40	245	NOR TYPE	.000015 Amp	13.97 mm		70 ns	3	YES
SST39VF6401B-70-4I-EKE-T	Microchip Technology	FLASH	INDUSTRIAL	48	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	2K	35 mA	4194304 words	3	YES	3/3.3	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP48,.8,20		Flash Memories	100	.5 mm	85 Cel	3-STATE	4MX16	4M	-40 Cel	2K	YES	MATTE TIN		DUAL	1		R-PDSO-G48	3	3.6 V	1.2 mm	100000 Write/Erase Cycles		12 mm	Not Qualified			BOTTOM	67108864 bit	2.7 V			e3		260	NOR TYPE	.00002 Amp	18.4 mm	YES	70 ns	3	YES
TC58FVB160AFT-70	Toshiba	FLASH	INDUSTRIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	30 mA	1048576 words	3	YES	3/3.3	16	SMALL OUTLINE, THIN PROFILE	TSSOP48,.8,20	8	Flash Memories		.5 mm	85 Cel		1MX16	1M	-40 Cel	1,2,1,31	YES		YES	DUAL			R-PDSO-G48		3.6 V	1.2 mm			12 mm	Not Qualified			BOTTOM	16777216 bit	2.7 V				NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.000005 Amp	18.4 mm	YES	80 ns	3	YES
W25M512JVFIQ	Winbond Electronics	FLASH	INDUSTRIAL	16	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS			67108864 words				8	SMALL OUTLINE		1			1.27 mm	85 Cel		64MX8	64M	-40 Cel					DUAL			R-PDSO-G16		3.6 V	2.64 mm		104 MHz	7.49 mm					536870912 bit	2.7 V				NOT SPECIFIED	NOT SPECIFIED	NOR TYPE		10.31 mm			3
W25N512GWEIR	Winbond Electronics	FLASH	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS			67108864 words	1.8			8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE		1			1.27 mm	85 Cel		64MX8	64M	-40 Cel					DUAL			R-PDSO-N8		1.95 V	.8 mm		104 MHz	6 mm					536870912 bit	1.7 V				NOT SPECIFIED	NOT SPECIFIED	SLC NAND TYPE		8 mm			1.8
W25Q256JWPIQ	Winbond Electronics	FLASH	INDUSTRIAL	8	HVQCCN	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS		12 mA	33554432 words	1.8			8	CHIP CARRIER, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.25			20	1.27 mm	85 Cel		32MX8	32M	-40 Cel					DUAL		HARDWARE/SOFTWARE	R-PDSO-N8		1.95 V	.8 mm	100000 Write/Erase Cycles	133 MHz	5 mm			SPI		268435456 bit	1.7 V				NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.0001 Amp	6 mm			1.8
W25Q40CLSSIG	Winbond Electronics	FLASH	INDUSTRIAL	8	SOP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		16 mA	4194304 words	3		2.5/3.3	1	SMALL OUTLINE	SOP8,.3		Flash Memories	20	1.27 mm	85 Cel		4MX1	4M	-40 Cel					DUAL		HARDWARE/SOFTWARE	S-PDSO-G8		3.6 V	2.16 mm	100000 Write/Erase Cycles	104 MHz	5.28 mm	Not Qualified		SPI		4194304 bit	2.3 V				NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.000005 Amp	5.28 mm			3
W25Q64FVSFIG	Winbond Electronics	FLASH	INDUSTRIAL	16	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS			8388608 words				8	SMALL OUTLINE	SOP16,.4	1		20	1.27 mm	85 Cel	3-STATE	8MX8	8M	-40 Cel					DUAL		HARDWARE/SOFTWARE	R-PDSO-G16		3.6 V	2.64 mm		104 MHz	7.49 mm	Not Qualified		SPI		67108864 bit	3 V							.00005 Amp	10.31 mm
W25X20CLUXIG	Winbond Electronics	FLASH	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS		15 mA	2097152 words	3		2.5/3.3	1	SMALL OUTLINE	SOLCC8,.11,20		Flash Memories	20	.5 mm	85 Cel		2MX1	2M	-40 Cel					DUAL		HARDWARE/SOFTWARE	R-PDSO-N8		3.6 V	.6 mm	100000 Write/Erase Cycles	104 MHz	2 mm	Not Qualified		SPI		2097152 bit	2.7 V	IT ALSO OPERATES AT 2.3 V AT 80 MHZ			NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.000005 Amp	3 mm			3
W29N01HVSINA	Winbond Electronics	FLASH	INDUSTRIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS			134217728 words	3			8	SMALL OUTLINE, THIN PROFILE					.5 mm	85 Cel		128MX8	128M	-40 Cel					DUAL			R-PDSO-G48		3.6 V	1.2 mm			12 mm					1073741824 bit	2.7 V				NOT SPECIFIED	NOT SPECIFIED	SLC NAND TYPE		18.4 mm			3.3
A25L080O-UF/G	Amic Technology	FLASH	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		25 mA	1048576 words	3.3		3/3.3	8	SMALL OUTLINE	SOP8,.25		Flash Memories	20	1.27 mm	85 Cel		1MX8	1M	-40 Cel					DUAL		HARDWARE/SOFTWARE	R-PDSO-G8		3.6 V	1.75 mm	100000 Write/Erase Cycles	100 MHz	3.9 mm	Not Qualified		SPI		8388608 bit	3 V						NOR TYPE	.000025 Amp	4.85 mm			2.7
AM29F800BB-55SI	Spansion	FLASH	INDUSTRIAL	44	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	60 mA	524288 words	5	YES	5	16	SMALL OUTLINE	SOP44,.63	8	Flash Memories		1.27 mm	85 Cel		512KX16	512K	-40 Cel	1,2,1,15	YES	TIN LEAD	YES	DUAL			R-PDSO-G44	3	5.5 V	2.8 mm	1000000 Write/Erase Cycles		13.3 mm	Not Qualified			BOTTOM	8388608 bit	4.5 V	BOTTOM BOOT BLOCK		e0		260	NOR TYPE	.001 Amp	28.2 mm		55 ns	5	YES
AT25DN011-SSHF-T	Renesas Electronics	FLASH	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS			1048576 words	3			1	SMALL OUTLINE					1.27 mm	85 Cel		1MX1	1M	-40 Cel					DUAL			R-PDSO-G8	1	3.6 V	1.75 mm		104 MHz	3.9 mm					1048576 bit	2.3 V								4.925 mm			3
AT25FF321A-SSHN-B	Renesas Electronics	FLASH	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		16.5 mA	2097152 words	3.3			16	SMALL OUTLINE	SOP8,.25			20	1.27 mm	85 Cel	3-STATE	2MX16	2M	-40 Cel			Nickel/Palladium/Gold (Ni/Pd/Au)		DUAL		HARDWARE/SOFTWARE	R-PDSO-G8		3.6 V	1.75 mm	100000 Write/Erase Cycles	133 MHz	3.9 mm			SPI		33554432 bit	2.7 V	ALSO OPERATES AT 108MHZ @1.65V MINIMUM SUPPLY		e4			NOR TYPE	.00005 Amp	4.925 mm			3.3
AT25SF128A-SHB-Y	Renesas Electronics	FLASH	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		20 mA	16777216 words				8	SMALL OUTLINE	SOP8,.3			20	1.27 mm	85 Cel	3-STATE	16MX8	16M	-40 Cel					DUAL		HARDWARE/SOFTWARE	R-PDSO-G8		3.6 V	2.16 mm	100000 Write/Erase Cycles	133 MHz	5.24 mm			SPI		134217728 bit	2.7 V						NOR TYPE	.000025 Amp	5.29 mm
AT25XE161D-UUN-T	Renesas Electronics	FLASH	INDUSTRIAL	8	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS		17.5 mA	2097152 words	1.8			8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA8,3X5,14/8			20	.35 mm	85 Cel	3-STATE	2MX8	2M	-40 Cel					BOTTOM		HARDWARE/SOFTWARE	R-PBGA-B8	1	3.6 V	.462 mm	100000 Write/Erase Cycles	108 MHz	1.737 mm			SPI		16777216 bit	1.65 V						NOR TYPE	.00005 Amp	1.767 mm			1.8
AT29C256-12PI	Atmel	FLASH	INDUSTRIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	64	50 mA	32768 words	5	YES	5	8	IN-LINE	DIP28,.6		Flash Memories		2.54 mm	85 Cel	3-STATE	32KX8	32K	-40 Cel	512	NO	TIN LEAD		DUAL			R-PDIP-T28		5.5 V	5.59 mm			15.24 mm	Not Qualified	10 ms			262144 bit	4.5 V	AUTOMATIC WRITE; HARDWARE & SOFTWARE DATA PROTECTION	64	e0			NOR TYPE	.0003 Amp	36.95 mm		120 ns	5	YES
AT45DB021E-SHN2B-T	Renesas Electronics	FLASH	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS			2097152 words	1.8			1	SMALL OUTLINE					1.27 mm	85 Cel		2MX1	2M	-40 Cel			NICKEL PALLADIUM GOLD		DUAL			R-PDSO-G8	1	3.6 V	2.16 mm		70 MHz	5.24 mm					2097152 bit	1.65 V			e4		260			5.29 mm			2.7
AT45DB041D-SSU-SL955	Atmel	FLASH	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		17 mA	4194304 words	3		3/3.3	1	SMALL OUTLINE	SOP8,.25		Flash Memories	20	1.27 mm	85 Cel		4MX1	4M	-40 Cel			Matte Tin (Sn)		DUAL		HARDWARE/SOFTWARE	R-PDSO-G8		3.6 V	1.75 mm	100000 Write/Erase Cycles	66 MHz	3.9 mm	Not Qualified		SPI		4194304 bit	2.7 V	ORGANIZED AS 2048 PAGES OF 256 BYTES EACH		e3			NOR TYPE	.00001 Amp	4.925 mm			2.7
AT45DB041D-SU-SL955	Atmel	FLASH	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		17 mA	4194304 words	3		3/3.3	1	SMALL OUTLINE	SOP8,.3		Flash Memories	20	1.27 mm	85 Cel		4MX1	4M	-40 Cel			Matte Tin (Sn)		DUAL		HARDWARE/SOFTWARE	R-PDSO-G8		3.6 V	2.16 mm	100000 Write/Erase Cycles	66 MHz	5.24 mm	Not Qualified		SPI		4194304 bit	2.7 V	ORGANIZED AS 2048 PAGES OF 256 BYTES EACH		e3			NOR TYPE	.00001 Amp	5.29 mm			2.7
AT45DB161E-MHF2B-T	Renesas Electronics	FLASH	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS		26 mA	16777216 words	3		2.5/3.3	1	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.25		Flash Memories	20	1.27 mm	85 Cel		16MX1	16M	-40 Cel			NICKEL PALLADIUM GOLD		DUAL		HARDWARE/SOFTWARE	R-PDSO-N8	1	3.6 V	.6 mm	100000 Write/Erase Cycles	70 MHz	5 mm	Not Qualified		SPI		16777216 bit	2.3 V			e4			NOR TYPE	.00001 Amp	6 mm			2.7
EPC8QI100N	Intel	EEPROM	INDUSTRIAL	100	QFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	SYNCHRONOUS		90 mA	8388608 words	3.3		3.3	1	FLATPACK	QFP100,.7X.9		Flash Memories		.65 mm	85 Cel	3-STATE	8MX1	8M	-40 Cel			MATTE TIN		QUAD			R-PQFP-G100	3	3.6 V	2.15 mm	100000 Write/Erase Cycles	66.7 MHz	14 mm	Not Qualified				8388608 bit	3 V			e3				.00015 Amp	20 mm
IS21ES16G-JCLI	Integrated Silicon Solution	FLASH	INDUSTRIAL	153	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS			17179869184 words	3.3	NO		8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA153,14X14,20	1			.5 mm	85 Cel	3-STATE	16GX8	16G	-40 Cel		NO	TIN SILVER COPPER		BOTTOM			R-PBGA-B153	3	3.6 V	1 mm		200 MHz	11.5 mm					137438953472 bit	2.7 V			e1	10	260	MLC NAND TYPE		13 mm			3.3	NO
IS22ES04G-JCLA1	Integrated Silicon Solution	FLASH	INDUSTRIAL	153	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	PARALLEL	SYNCHRONOUS			4294967296 words	3.3			8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH					.5 mm	85 Cel		4GX8	4G	-40 Cel			TIN SILVER COPPER		BOTTOM			R-PBGA-B153	3	3.6 V	1 mm			11.5 mm					34359738368 bit	2.7 V			e1	10	260			13 mm			3.3
IS25LP032D-JMLE-TR	Integrated Silicon Solution	FLASH	INDUSTRIAL	16	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS			4194304 words	3			8	SMALL OUTLINE		1			1.27 mm	105 Cel		4MX8	4M	-40 Cel					DUAL			R-PDSO-G16		3.6 V	2.65 mm		133 MHz	7.49 mm					33554432 bit	2.3 V				NOT SPECIFIED	NOT SPECIFIED			10.31 mm			3
IS25LP064D-JBLE	Integrated Silicon Solution	FLASH	INDUSTRIAL	8	SOP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS			8388608 words	3			8	SMALL OUTLINE		1			1.27 mm	105 Cel		8MX8	8M	-40 Cel					DUAL			S-PDSO-G8		3.6 V	2.16 mm		166 MHz	5.28 mm					67108864 bit	2.7 V				30	250			5.28 mm			3
IS25WP080D-JBLE-TR	Integrated Silicon Solution	FLASH	INDUSTRIAL	8	SOP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS			1048576 words	1.8			8	SMALL OUTLINE					1.27 mm	105 Cel		1MX8	1M	-40 Cel					DUAL			S-PDSO-G8		1.95 V	2.16 mm		133 MHz	5.28 mm					8388608 bit	1.65 V				NOT SPECIFIED	NOT SPECIFIED			5.28 mm			1.8
IS25WP512M-RMLE	Integrated Silicon Solution	FLASH	INDUSTRIAL	16	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		35 mA	67108864 words	1.8			8	SMALL OUTLINE	SOP16,.4	1		20	1.27 mm	105 Cel	3-STATE	64MX8	64M	-40 Cel			Tin (Sn)		DUAL		HARDWARE/SOFTWARE	R-PDSO-G16		1.95 V	2.65 mm	100000 Write/Erase Cycles	133 MHz	7.49 mm			SPI		536870912 bit	1.65 V			e3	10	260	NOR TYPE	.00014 Amp	10.31 mm			1.8
IS34ML01G081-BLI	Integrated Silicon Solution	FLASH	INDUSTRIAL	63	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS			134217728 words	3.3			8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH					.8 mm	85 Cel		128MX8	128M	-40 Cel			Tin/Silver/Copper (Sn/Ag/Cu)		BOTTOM			R-PBGA-B63	3	3.6 V	1 mm			9 mm					1073741824 bit	2.7 V			e1	10	260	SLC NAND TYPE		11 mm			3.3
JS28F00AP30EFA	Micron Technology	FLASH	INDUSTRIAL	56	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	SYNCHRONOUS	64K	31 mA	67108864 words	1.8	NO	1.8,1.8/3.3	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP56,.8,20		Flash Memories		.5 mm	85 Cel		64MX16	64M	-40 Cel	1K	YES	Matte Tin (Sn)		DUAL			R-PDSO-G56		2 V	1.2 mm			14 mm	Not Qualified				1073741824 bit	1.7 V	SYMMETRICAL BLOCKS	16	e3	30	260	NOR TYPE	.00024 Amp	18.4 mm	YES	110 ns	1.8	NO
K9F5608U0D-PCB0T	Samsung	FLASH	INDUSTRIAL	48	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	16K	25 mA	33554432 words	3.3	NO	3/3.3	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP48,.8,20		Flash Memories		.5 mm	85 Cel		32MX8	32M	-40 Cel	2K	YES	TIN BISMUTH	YES	DUAL			R-PDSO-G48	3	3.6 V	1.2 mm			12 mm	Not Qualified				268435456 bit	2.7 V		512	e6		260		.00005 Amp	18.4 mm		30 ns	3.3	NO
M29F800DB70M6E	STMicroelectronics	FLASH	INDUSTRIAL	44	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	20 mA	524288 words	5	YES	5	16	SMALL OUTLINE	SOP44,.63	8	Flash Memories		1.27 mm	85 Cel		512KX16	512K	-40 Cel	1,2,1,15	YES	TIN/NICKEL PALLADIUM GOLD	YES	DUAL			R-PDSO-G44		5.5 V	2.8 mm			13.3 mm	Not Qualified			BOTTOM	8388608 bit	4.5 V	BOTTOM BOOT BLOCK		e3/e4	NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.00015 Amp	28.2 mm	YES	70 ns	5	YES
M29W160ET70ZA6	STMicroelectronics	FLASH	INDUSTRIAL	48	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	20 mA	1048576 words	3	YES	3/3.3	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA48,6X8,32	8	Flash Memories		.8 mm	85 Cel		1MX16	1M	-40 Cel	1,2,1,31	YES		YES	BOTTOM			R-PBGA-B48		3.6 V	1.2 mm			6 mm	Not Qualified			TOP	16777216 bit	2.7 V	TOP BOOT BLOCK					NOR TYPE	.0001 Amp	8 mm	YES	70 ns	3	YES
M29W320DB70N6T	STMicroelectronics	FLASH	INDUSTRIAL	48	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	20 mA	2097152 words	3.3	YES	3.3	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP48,.8,20	8	Flash Memories		.5 mm	85 Cel		2MX16	2M	-40 Cel	1,2,1,63	YES	TIN LEAD	YES	DUAL			R-PDSO-G48		3.6 V	1.2 mm			12 mm	Not Qualified			BOTTOM	33554432 bit	3 V	BOTTOM BOOT BLOCK		e0			NOR TYPE	.0001 Amp	18.4 mm	YES	70 ns	3	YES
M29W320ET70N6E	STMicroelectronics	FLASH	INDUSTRIAL	48	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	8K,64K	20 mA	2097152 words	3	YES	3/3.3	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP48,.8,20	8	Flash Memories		.5 mm	85 Cel		2MX16	2M	-40 Cel	8,63	YES		YES	DUAL			R-PDSO-G48		3.6 V	1.2 mm			12 mm	Not Qualified			TOP	33554432 bit	2.7 V			e3/e6		260	NOR TYPE	.0001 Amp	18.4 mm	YES	70 ns	3	YES
MT25QL256ABA8ESF-MSIT	Micron Technology	FLASH	INDUSTRIAL	16	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS			33554432 words	3			8	SMALL OUTLINE					1.27 mm	85 Cel		32MX8	32M	-40 Cel					DUAL			R-PDSO-G16		3.6 V	2.65 mm		133 MHz	7.5 mm					268435456 bit	2.7 V				NOT SPECIFIED	NOT SPECIFIED			10.3 mm			3
MT28EW01GABA1HJS-0SIT	Micron Technology	FLASH	INDUSTRIAL	56	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS			67108864 words	3			16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH					.5 mm	85 Cel		64MX16	64M	-40 Cel			MATTE TIN		DUAL			R-PDSO-G56		3.6 V	1.2 mm			14 mm					1073741824 bit	2.7 V			e3	30	260	NOR TYPE		18.4 mm		95 ns	3
MT29F16G08ABCBBH1-12AIT:B	Micron Technology	FLASH	INDUSTRIAL	100	VBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS/SYNCHRONOUS	512K	50 mA	2147483648 words	3.3	YES		8	GRID ARRAY, VERY THIN PROFILE	BGA100,10X17,40			10	1 mm	85 Cel		2GX8	2G	-40 Cel	4K	YES		YES	BOTTOM			R-PBGA-B100		3.6 V	1 mm	100000 Write/Erase Cycles		12 mm					17179869184 bit	2.7 V	83MHZ CLOCK FREQUENCY IS AVAILABLE	4K		NOT SPECIFIED	NOT SPECIFIED	SLC NAND TYPE	.00005 Amp	18 mm			3.3	NO
MT29F16G08AJADAWP-IT:D	Micron Technology	FLASH	INDUSTRIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	128K	35 mA	2147483648 words	3.3	NO	3.3	8	SMALL OUTLINE, THIN PROFILE	TSSOP48,.8,20		Flash Memories		.5 mm	85 Cel		2GX8	2G	-40 Cel	16K	YES		YES	DUAL			R-PDSO-G48		3.6 V	1.2 mm			12 mm	Not Qualified				17179869184 bit	2.7 V		2K		30	260	SLC NAND TYPE	.0001 Amp	18.4 mm		25 ns	3.3	NO
MT29F1G08ABAEAH4-AITX:E	Micron Technology	FLASH	INDUSTRIAL	63	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS			134217728 words	3.3			8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH					.8 mm	85 Cel		128MX8	128M	-40 Cel					BOTTOM			R-PBGA-B63		3.6 V	1 mm			9 mm					1073741824 bit	2.7 V						SLC NAND TYPE		11 mm			2.7
MT29F2G16ABBEAHC-IT:E	Micron Technology	FLASH	INDUSTRIAL	63	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	64K	20 mA	134217728 words	1.8	NO	1.8	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA63,10X12,32		Flash Memories		.8 mm	85 Cel		128MX16	128M	-40 Cel	2K	YES		YES	BOTTOM			R-PBGA-B63		1.95 V	1 mm			10.5 mm	Not Qualified				2147483648 bit	1.7 V		1K		30	260	SLC NAND TYPE	.00005 Amp	13 mm		25 ns	1.8	NO
MT29F4G01AAADDHC-ITX:DTR	Micron Technology	FLASH	INDUSTRIAL	63	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS			4294967296 words	3.3			1	GRID ARRAY, VERY THIN PROFILE, FINE PITCH					.8 mm	85 Cel		4GX1	4G	-40 Cel			TIN SILVER COPPER		BOTTOM			R-PBGA-B63		3.6 V	1 mm		50 MHz	10.5 mm					4294967296 bit	2.7 V			e1			SLC NAND TYPE		13 mm			3.3
MT29F4G08ABADAWP-ITX:D	Micron Technology	FLASH	INDUSTRIAL	48	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	128K	35 mA	536870912 words	3.3	NO	3/3.3	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP48,.8,20		Flash Memories		.5 mm	85 Cel		512MX8	512M	-40 Cel	4K	YES		YES	DUAL			R-PDSO-G48							Not Qualified				4294967296 bit			2K		30	260	SLC NAND TYPE	.0001 Amp			25 ns		NO
MTFC16GAPALGT-AAT	Micron Technology	FLASH CARD	INDUSTRIAL	153	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	PARALLEL	SYNCHRONOUS			17179869184 words				8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA153,14X14,20			5	.5 mm	105 Cel		16GX8	16G	-40 Cel					BOTTOM			R-PBGA-B153		3.6 V	.8 mm		200 MHz	11.5 mm					137438953472 bit	2.7 V						NAND TYPE		13 mm
MTFC16GAPALHT-AAT	Micron Technology	FLASH CARD	INDUSTRIAL	100	VBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	PARALLEL	SYNCHRONOUS			17179869184 words				8	GRID ARRAY, VERY THIN PROFILE	BGA100,10X17,40			5	1 mm	105 Cel		16GX8	16G	-40 Cel					BOTTOM			R-PBGA-B100		3.6 V	1 mm		200 MHz	14 mm					137438953472 bit	2.7 V						NAND TYPE		18 mm
MTFC64GAZAQHD-AAT	Micron Technology	FLASH CARD	INDUSTRIAL	153	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	PARALLEL	SYNCHRONOUS			68719476736 words	1.8			8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA153,14X14,20				.5 mm	105 Cel		64GX8	64G	-40 Cel			TIN SILVER COPPER		BOTTOM			R-PBGA-B153		1.95 V	.9 mm		200 MHz	11.5 mm					549755813888 bit	1.7 V			e1	30	260	NAND TYPE		13 mm			1.8
MTFDHBM1T0TDP-1AT12AIYY	Micron Technology	FLASH MODULE	INDUSTRIAL			RECTANGULAR	UNSPECIFIED	YES	1	CMOS		BALL		ASYNCHRONOUS			1099511627776 words				8							95 Cel		1TX8	1T	-40 Cel					BOTTOM			R-XBGA-B											8796093022208 bit							TLC NAND TYPE

Flash Memory

Flash memory is a type of non-volatile computer memory that is commonly used in digital devices such as USB drives, solid-state drives, and digital cameras. It is a type of EEPROM (Electrically Erasable Programmable Read-Only Memory) that allows data to be erased and reprogrammed in blocks instead of one byte at a time. Flash memory uses a floating gate transistor to store data, which allows it to retain information even when the power is turned off.

Flash memory is widely used in digital devices because of its high capacity, small size, and fast access times. It is also more durable than other types of memory, such as hard disk drives, because it has no moving parts. This makes it ideal for use in portable devices that may be subject to physical shock or vibration.

There are two types of flash memory: NOR flash and NAND flash. NOR flash is faster than NAND flash, but it has lower density and higher cost per bit. NOR flash is typically used for code storage, such as firmware or boot code, because it provides faster access times. NAND flash has higher density and lower cost per bit, which makes it ideal for data storage applications.

Flash memory has a limited lifespan, as it can only be erased and reprogrammed a limited number of times. This is because the process of erasing and reprogramming the memory causes wear and tear on the floating gate transistor. However, modern flash memory devices have a sophisticated wear-leveling algorithm that distributes writes evenly across the memory, which extends the lifespan of the device.