INDUSTRIAL Flash Memory 2,400+

Reset All

Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Screening Level	Terminal Form	Parallel or Serial	Operating Mode	Sector Size (Words)	Maximum Supply Current	No. of Words	Nominal Supply Voltage / Vsup (V)	Toggle Bit	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Alternate Memory Width	Sub-Category	Minimum Data Retention Time	Terminal Pitch	Maximum Operating Temperature	Organization	No. of Words Code	Minimum Operating Temperature	No. of Sectors/Size	Command User Interface	Terminal Finish	Ready or Busy	Terminal Position	Write Protection	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Endurance	Maximum Clock Frequency (fCLK)	Width	Qualification	Maximum Write Cycle Time (tWC)	Serial Bus Type	Boot Block	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	Page Size (words)	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Type	Maximum Standby Current	Length	Common Flash Interface	Maximum Access Time	Programming Voltage (V)	Data Polling
M28W320FCB70ZB6E	STMicroelectronics	FLASH	INDUSTRIAL	47	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	4K,32K	20 mA	2097152 words	3	NO	3/3.3	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA47,6X8,30		Flash Memories		.75 mm	85 Cel	2MX16	2M	-40 Cel	8,63	YES	TIN SILVER COPPER		BOTTOM		R-PBGA-B47		3.6 V	1.2 mm			6.37 mm	Not Qualified			BOTTOM	33554432 bit	2.7 V			e1			NOR TYPE	.000005 Amp	6.39 mm	YES	70 ns	3	NO
M29DW128G60ZA6E	STMicroelectronics	FLASH	INDUSTRIAL	64	BGA	SQUARE	PLASTIC/EPOXY	YES		CMOS		BALL	PARALLEL		32K,128K	15 mA	8388608 words		YES	3/3.3	16	GRID ARRAY	BGA64,8X8,40		Flash Memories		1 mm	85 Cel	8MX16	8M	-40 Cel	8,62	YES		YES	BOTTOM		S-PBGA-B64							Not Qualified			BOTTOM/TOP	134217728 bit			8				NOR TYPE	.0001 Amp		YES	60 ns		YES
M29F002BT70K6E	STMicroelectronics	FLASH	INDUSTRIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	20 mA	262144 words	5	YES	5	8	CHIP CARRIER	LDCC32,.5X.6		Flash Memories		1.27 mm	85 Cel	256KX8	256K	-40 Cel	1,2,1,3	YES	TIN		QUAD		R-PQCC-J32		5.5 V	3.56 mm	100000 Write/Erase Cycles		11.43 mm	Not Qualified			TOP	2097152 bit	4.5 V	TOP BOOT BLOCK		e3			NOR TYPE	.0001 Amp	13.97 mm		70 ns	5	YES
M29F200FB5AN6E2	Micron Technology	FLASH	INDUSTRIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	30 mA	131072 words	5	YES	5	16	SMALL OUTLINE, THIN PROFILE	TSSOP48,.8,20	8	Flash Memories		.5 mm	85 Cel	128KX16	128K	-40 Cel	1,2,1,3	YES	MATTE TIN	YES	DUAL		R-PDSO-G48		5.5 V	1.2 mm			12 mm	Not Qualified			BOTTOM	2097152 bit	4.5 V	BOTTOM BOOT BLOCK		e3			NOR TYPE	.00012 Amp	18.4 mm	YES	55 ns	5	YES
M29F400FT5AN6E2	Micron Technology	FLASH	INDUSTRIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	30 mA	262144 words	5	YES	5	16	SMALL OUTLINE, THIN PROFILE	TSSOP48,.8,20	8	Flash Memories		.5 mm	85 Cel	256KX16	256K	-40 Cel	1,2,1,7	YES	MATTE TIN	YES	DUAL		R-PDSO-G48		5.5 V	1.2 mm			12 mm	Not Qualified			TOP	4194304 bit	4.5 V	TOP BOOT BLOCK		e3			NOR TYPE	.00012 Amp	18.4 mm	YES	55 ns	5	YES
M29W128FL70N6E	STMicroelectronics	FLASH	INDUSTRIAL	56	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	64K	20 mA	8388608 words	3	YES	3/3.3	16	SMALL OUTLINE, THIN PROFILE	TSSOP56,.8,20	8	Flash Memories		.5 mm	85 Cel	8MX16	8M	-40 Cel	256	YES	MATTE TIN/TIN BISMUTH	YES	DUAL		R-PDSO-G56		3.6 V	1.2 mm			14 mm	Not Qualified				134217728 bit	2.7 V	100,000 PROGRAM/ERASE CYCLES	8/16	e3/e6	40	260	NOR TYPE	.0001 Amp	18.4 mm	YES	70 ns	3	YES
M29W128GH70ZS6E	Micron Technology	FLASH	INDUSTRIAL	64	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	128K	20 mA	8192 words	3	YES	3/3.3	16	GRID ARRAY, LOW PROFILE	BGA64,8X8,40	8	Flash Memories		1 mm	85 Cel	8KX16	8K	-40 Cel	128	YES	TIN SILVER COPPER	YES	BOTTOM		R-PBGA-B64		3.6 V	1.4 mm			11 mm	Not Qualified	.00007 ms			131072 bit	2.7 V		8/16	e1			NOR TYPE	.0001 Amp	13 mm	YES	70 ns	3	YES
M29W256GH7AN6E	Micron Technology	FLASH	INDUSTRIAL	56	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	PARALLEL	ASYNCHRONOUS	128K	15 mA	16777216 words	3	YES	3/3.3	16	SMALL OUTLINE	TSSOP56,.8,20	8	Flash Memories		.5 mm	85 Cel	16MX16	16M	-40 Cel	256	YES	MATTE TIN	YES	DUAL		R-PDSO-G56		3.6 V	1.2 mm			14 mm	Not Qualified	.00007 ms		BOTTOM/TOP	268435456 bit	2.7 V		8/16	e3			NOR TYPE	.0001 Amp	20 mm	YES	70 ns	3	YES
M29W320EB70N6E	STMicroelectronics	FLASH	INDUSTRIAL	48	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	8K,64K	20 mA	2097152 words	3	YES	3/3.3	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP48,.8,20	8	Flash Memories		.5 mm	85 Cel	2MX16	2M	-40 Cel	8,63	YES	TIN/TIN BISMUTH	YES	DUAL		R-PDSO-G48		3.6 V	1.2 mm			12 mm	Not Qualified			BOTTOM	33554432 bit	2.7 V			e3/e6	NOT SPECIFIED	260	NOR TYPE	.0001 Amp	18.4 mm	YES	70 ns	3	YES
M29W320ET70N6F	STMicroelectronics	FLASH	INDUSTRIAL	48	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	8K,64K	20 mA	2097152 words	3	YES	3/3.3	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP48,.8,20	8	Flash Memories		.5 mm	85 Cel	2MX16	2M	-40 Cel	8,63	YES	TIN/TIN BISMUTH	YES	DUAL		R-PDSO-G48		3.6 V	1.2 mm			12 mm	Not Qualified			TOP	33554432 bit	2.7 V			e3/e6	NOT SPECIFIED	260	NOR TYPE	.0001 Amp	18.4 mm	YES	70 ns	3	YES
M29W400BB90N6	STMicroelectronics	FLASH	INDUSTRIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	20 mA	262144 words	3.3	YES	3/3.3	16	SMALL OUTLINE, THIN PROFILE	TSSOP48,.8,20	8	Flash Memories		.5 mm	85 Cel	256KX16	256K	-40 Cel	1,2,1,7	YES	TIN LEAD	YES	DUAL		R-PDSO-G48		3.6 V	1.2 mm	100000 Write/Erase Cycles		12 mm	Not Qualified			BOTTOM	4194304 bit	2.7 V	BOTTOM BOOT BLOCK		e0			NOR TYPE	.0001 Amp	18.4 mm		90 ns	2.7	YES
M29W400DT55N6E	STMicroelectronics	FLASH	INDUSTRIAL	48	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	20 mA	262144 words	3	YES	3/3.3	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP48,.8,20	8	Flash Memories		.5 mm	85 Cel	256KX16	256K	-40 Cel	1,2,1,7	YES	TIN/TIN BISMUTH	YES	DUAL		R-PDSO-G48		3.6 V	1.2 mm			12 mm	Not Qualified			TOP	4194304 bit	2.7 V	TOP BOOT BLOCK		e3/e6	NOT SPECIFIED	260	NOR TYPE	.0001 Amp	18.4 mm		55 ns	3	YES
M29W640GH70NB6E	STMicroelectronics	FLASH	INDUSTRIAL	56	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	64K	10 mA	4194304 words	3	YES	3/3.3	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP56,.8,20	8	Flash Memories		.5 mm	85 Cel	4MX16	4M	-40 Cel	128	YES	MATTE TIN/TIN BISMUTH	YES	DUAL		R-PDSO-G56		3.6 V	1.2 mm			14 mm	Not Qualified				67108864 bit	2.7 V		4/8	e3/e6	40	260	NOR TYPE	.0001 Amp	18.4 mm	YES	70 ns	3	YES
M29W800DT70N6	STMicroelectronics	FLASH	INDUSTRIAL	48	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	20 mA	524288 words	3	YES	3/3.3	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP48,.8,20	8	Flash Memories		.5 mm	85 Cel	512KX16	512K	-40 Cel	1,2,1,15	YES	TIN LEAD	YES	DUAL		R-PDSO-G48		3.6 V	1.2 mm			12 mm	Not Qualified			TOP	8388608 bit	2.7 V	TOP BOOT BLOCK		e0			NOR TYPE	.0001 Amp	18.4 mm	YES	70 ns	3	YES
M45PE80-VMN6TP	STMicroelectronics	FLASH	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		15 mA	1048576 words	3		3/3.3	8	SMALL OUTLINE	SOP8,.25		Flash Memories	20	1.27 mm	85 Cel	1MX8	1M	-40 Cel			NICKEL PALLADIUM GOLD		DUAL	HARDWARE/SOFTWARE	R-PDSO-G8	1	3.6 V	1.75 mm	100000 Write/Erase Cycles	33 MHz	3.9 mm	Not Qualified	25 ms	SPI		8388608 bit	2.7 V			e4			NOR TYPE	.00001 Amp	4.9 mm			2.7
M45PE80-VMP6G	STMicroelectronics	FLASH	INDUSTRIAL	8	VSON	RECTANGULAR	UNSPECIFIED	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS		15 mA	1048576 words	3		3/3.3	8	SMALL OUTLINE, VERY THIN PROFILE	SOLCC8,.25		Flash Memories	20	1.27 mm	85 Cel	1MX8	1M	-40 Cel					DUAL	HARDWARE/SOFTWARE	R-XDSO-N8		3.6 V	1 mm	100000 Write/Erase Cycles	33 MHz	5 mm	Not Qualified	25 ms	SPI		8388608 bit	2.7 V				NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.00001 Amp	6 mm			2.7
M45PE80-VMW6G	STMicroelectronics	FLASH	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		15 mA	1048576 words	3		3/3.3	8	SMALL OUTLINE	SOP8,.3		Flash Memories	20	1.27 mm	85 Cel	1MX8	1M	-40 Cel			NICKEL PALLADIUM GOLD		DUAL	HARDWARE/SOFTWARE	R-PDSO-G8	1	3.6 V	2.03 mm	100000 Write/Erase Cycles	33 MHz	5.25 mm	Not Qualified	25 ms	SPI		8388608 bit	2.7 V			e4			NOR TYPE	.00001 Amp	5.3 mm			2.7
MBM29DL400TC-90PFTN	Spansion	FLASH	INDUSTRIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	45 mA	262144 words	3	YES	3/3.3	16	SMALL OUTLINE, THIN PROFILE	TSSOP48,.8,20	8	Flash Memories		.5 mm	85 Cel	256KX16	256K	-40 Cel	2,4,2,6	YES	TIN LEAD	YES	DUAL		R-PDSO-G48	3	3.6 V	1.2 mm			12 mm	Not Qualified			TOP	4194304 bit	2.7 V			e0		260	NOR TYPE	.000005 Amp	18.4 mm		90 ns	3	YES
MBM29LV160BE70TN	Fujitsu	FLASH	INDUSTRIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	35 mA	1048576 words	3	YES	3/3.3	16	SMALL OUTLINE, THIN PROFILE	TSSOP48,.8,20	8	Flash Memories		.5 mm	85 Cel	1MX16	1M	-40 Cel	1,2,1,31	YES	Tin/Lead (Sn/Pb)	YES	DUAL		R-PDSO-G48		3.6 V	1.2 mm			12 mm	Not Qualified			BOTTOM	16777216 bit	2.7 V			e0			NOR TYPE	.000005 Amp	18.4 mm	YES	70 ns	3	YES
MBM29LV160BE-70TN	Spansion	FLASH	INDUSTRIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	35 mA	1048576 words	3	YES	3/3.3	16	SMALL OUTLINE, THIN PROFILE	TSSOP48,.8,20	8	Flash Memories		.5 mm	85 Cel	1MX16	1M	-40 Cel	1,2,1,31	YES	TIN LEAD	YES	DUAL		R-PDSO-G48		3.6 V	1.1 mm			12 mm	Not Qualified			BOTTOM	16777216 bit	2.7 V			e0			NOR TYPE	.000005 Amp	18.4 mm	YES	70 ns	3	YES
MT25QL512ABA8ESF-0SIT	Micron Technology	FLASH	INDUSTRIAL	16	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS			536870912 words	3			1	SMALL OUTLINE					1.27 mm	85 Cel	512MX1	512M	-40 Cel					DUAL		R-PDSO-G16		3.6 V	2.65 mm		133 MHz	7.5 mm					536870912 bit	2.7 V				30	260	NOR TYPE		10.3 mm			3
MT28EW01GABA1LJS-0SIT	Micron Technology	FLASH	INDUSTRIAL	56	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS			67108864 words	3			16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH					.5 mm	85 Cel	64MX16	64M	-40 Cel			MATTE TIN		DUAL		R-PDSO-G56		3.6 V	1.2 mm			14 mm					1073741824 bit	2.7 V			e3	30	260	NOR TYPE		18.4 mm		95 ns	3
MT28EW512ABA1LPN-0SIT	Micron Technology	FLASH	INDUSTRIAL	56	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS			33554432 words	3			16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH		8			.8 mm	85 Cel	32MX16	32M	-40 Cel					BOTTOM		R-PBGA-B56		3.6 V	1 mm			7 mm					536870912 bit	2.7 V				NOT SPECIFIED	NOT SPECIFIED			9 mm		95 ns	3
MT28F320J3FS-11MET	Micron Technology	FLASH	INDUSTRIAL	64	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	128K	80 mA	2097152 words	3	NO	3/3.3	16	GRID ARRAY, THIN PROFILE	BGA64,8X8,40	8	Flash Memories		1 mm	85 Cel	2MX16	2M	-40 Cel	32	YES	TIN LEAD SILVER	YES	BOTTOM		R-PBGA-B64		3.6 V	1.2 mm			10 mm	Not Qualified				33554432 bit	2.7 V		4/8	e0			NOR TYPE	.00012 Amp	13 mm	YES	110 ns	2.7	NO
MT29F16G08ADACAH4-IT:C	Micron Technology	FLASH	INDUSTRIAL	63	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	256K	35 mA	2147483648 words	3.3	NO	3/3.3	8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA63,10X12,32		Flash Memories		.8 mm	85 Cel	2GX8	2G	-40 Cel	8K	YES		YES	BOTTOM		R-PBGA-B63		3.6 V	1 mm			9 mm	Not Qualified				17179869184 bit	2.7 V		4K		NOT SPECIFIED	NOT SPECIFIED	SLC NAND TYPE	.0001 Amp	11 mm		25 ns	2.7	NO
MT29F1G01ABAFDSF-AAT:F	Micron Technology	FLASH	INDUSTRIAL	16	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	ASYNCHRONOUS			1073741824 words	3.3			1	SMALL OUTLINE						105 Cel	1GX1	1G	-40 Cel					DUAL		R-PDSO-G16											1073741824 bit					NOT SPECIFIED	NOT SPECIFIED	SLC NAND TYPE					3.3
MT29F1G08AACWPET:C	Micron Technology	FLASH	INDUSTRIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS			134217728 words	3.3			8	SMALL OUTLINE, THIN PROFILE					.5 mm	85 Cel	128MX8	128M	-40 Cel			TIN		DUAL		R-PDSO-G48		3.6 V	1.2 mm			12 mm					1073741824 bit	2.7 V			e3			SLC NAND TYPE		18.4 mm			3.3
MT29F1G08ABBDAHC-IT:D	Micron Technology	FLASH	INDUSTRIAL	63	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	128K	20 mA	134217728 words	1.8	NO	1.8	8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA63,10X12,32		Flash Memories		.8 mm	85 Cel	128MX8	128M	-40 Cel	1K	YES	TIN SILVER COPPER	YES	BOTTOM		R-PBGA-B63		1.95 V	1 mm			10.5 mm	Not Qualified				1073741824 bit	1.7 V		2K	e1			SLC NAND TYPE	.00005 Amp	13 mm		25 ns	1.8	NO
MT29F1G16ABBEAH4-AITX:E	Micron Technology	FLASH	INDUSTRIAL	63	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS			67108864 words	1.8			16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH					.8 mm	85 Cel	64MX16	64M	-40 Cel					BOTTOM		R-PBGA-B63		1.95 V	1 mm			9 mm					1073741824 bit	1.7 V						SLC NAND TYPE		11 mm			1.8
MT29F2G08ABAEAH4-AITX:E	Micron Technology	FLASH	INDUSTRIAL	63	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	128K	35 mA	268435456 words	3.3	NO	3/3.3	8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA63,10X12,32		Flash Memories		.8 mm	85 Cel	256MX8	256M	-40 Cel	2K	YES	TIN SILVER COPPER	YES	BOTTOM		R-PBGA-B63		3.6 V	1 mm			9 mm	Not Qualified				2147483648 bit	2.7 V		2K	e1	30	260	SLC NAND TYPE	.0001 Amp	11 mm		25 ns	2.7	NO
MT29F2G08ABAGAWP-IT:GTR	Micron Technology	FLASH	INDUSTRIAL				PLASTIC/EPOXY		1	CMOS				ASYNCHRONOUS			268435456 words				8							85 Cel	256MX8	256M	-40 Cel																		2147483648 bit							SLC NAND TYPE
MT29F2G16ABBEAH4-AAT:E	Micron Technology	FLASH	INDUSTRIAL	63	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS			134217728 words	1.8			16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH					.8 mm	105 Cel	128MX16	128M	-40 Cel					BOTTOM		R-PBGA-B63		1.95 V	1 mm			9 mm					2147483648 bit	1.7 V						SLC NAND TYPE		11 mm			1.8
MT29F2G16ABBEAH4-IT:E	Micron Technology	FLASH	INDUSTRIAL	63	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	64K	20 mA	134217728 words	1.8	NO	1.8	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA63,10X12,32		Flash Memories		.8 mm	85 Cel	128MX16	128M	-40 Cel	2K	YES		YES	BOTTOM		R-PBGA-B63		1.95 V	1 mm			9 mm	Not Qualified				2147483648 bit	1.7 V		1K		30	260	SLC NAND TYPE	.00005 Amp	11 mm		25 ns	1.8	NO
MT29F4G08ABBFAH4-AIT:F	Micron Technology	FLASH	INDUSTRIAL	63	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	256K	35 mA	536870912 words	1.8	NO		8	GRID ARRAY, VERY THIN PROFILE	BGA63,10X12,32			10	.8 mm	85 Cel	512MX8	512M	-40 Cel	2K	YES		YES	BOTTOM		R-PBGA-B63		1.95 V	1 mm	100000 Write/Erase Cycles		9 mm					4294967296 bit	1.7 V		4K				SLC NAND TYPE	.00005 Amp	11 mm				NO
MT35XU02GCBA2G12-0AAT	Micron Technology	FLASH	INDUSTRIAL	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	SERIAL	SYNCHRONOUS			268435456 words	1.8			8	GRID ARRAY, THIN PROFILE					1 mm	105 Cel	256MX8	256M	-40 Cel			TIN SILVER COPPER		BOTTOM		R-PBGA-B24		2 V	1.2 mm		200 MHz	6 mm					2147483648 bit	1.7 V			e1	30	260			8 mm			1.8
MT35XU256ABA1G12-0AAT	Micron Technology	FLASH	INDUSTRIAL	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	SERIAL	SYNCHRONOUS			268435456 words	1.8			1	GRID ARRAY, THIN PROFILE					1 mm	105 Cel	256MX1	256M	-40 Cel			TIN SILVER COPPER		BOTTOM		R-PBGA-B24		2 V	1.2 mm		166 MHz	6 mm					268435456 bit	1.7 V			e1	30	260			8 mm			1.8
MTFC16GAKAEEF-AAT	Micron Technology	FLASH CARD	INDUSTRIAL	169	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS			17179869184 words		NO		8	GRID ARRAY, THIN PROFILE	BGA169,14X28,20				.5 mm	105 Cel	16GX8	16G	-40 Cel		NO	GOLD OVER NICKEL	YES	BOTTOM		R-PBGA-B169		3.6 V	1.2 mm		52 MHz	14 mm					137438953472 bit	2.7 V			e4			NAND TYPE		18 mm			2.7	NO
MTFC16GJGEF-AITZ	Micron Technology	FLASH CARD	INDUSTRIAL	169	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS			17179869184 words				8	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA169,14X14,20				.5 mm	85 Cel	16GX8	16G	-40 Cel					BOTTOM		R-PBGA-B169		3.6 V	1.364 mm		52 MHz	14 mm					137438953472 bit	2.7 V				NOT SPECIFIED	NOT SPECIFIED	NAND TYPE		18 mm
MTFC32GASAQHD-IT	Micron Technology	FLASH CARD	INDUSTRIAL	153	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS			34359738368 words				8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA153,14X14,20			5	.5 mm	85 Cel	32GX8	32G	-40 Cel			TIN SILVER COPPER		BOTTOM		R-PBGA-B153		3.6 V	.9 mm		200 MHz	11.5 mm					274877906944 bit	2.7 V			e1	30	260	NAND TYPE		13 mm
MTFC64GASAONS-AITES	Micron Technology	FLASH CARD	INDUSTRIAL	153	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS			68719476736 words	3.3			8	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA153,14X14,20				.5 mm	95 Cel	64GX8	64G	-40 Cel					BOTTOM		R-PBGA-B153		3.6 V	1.461 mm		52 MHz	11.5 mm					549755813888 bit	2.7 V				NOT SPECIFIED	NOT SPECIFIED	NAND TYPE		13 mm
MTFC64GASAQHD-IT	Micron Technology	FLASH CARD	INDUSTRIAL	153	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS			68719476736 words				8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA153,14X14,20			5	.5 mm	85 Cel	64GX8	64G	-40 Cel					BOTTOM		R-PBGA-B153		3.6 V	.9 mm		200 MHz	11.5 mm					549755813888 bit	2.7 V						NAND TYPE		13 mm
MTFC64GAZAQHD-AIT	Micron Technology	FLASH CARD	INDUSTRIAL	153	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	PARALLEL	SYNCHRONOUS			68719476736 words	1.8			8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA153,14X14,20				.5 mm	85 Cel	64GX8	64G	-40 Cel					BOTTOM		R-PBGA-B153		1.95 V	.9 mm		200 MHz	11.5 mm					549755813888 bit	1.7 V						NAND TYPE		13 mm			1.8
MTFC8GLWDQ-3MAITZ	Micron Technology	FLASH CARD	INDUSTRIAL	100	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS			8589934592 words				8	GRID ARRAY, LOW PROFILE	BGA100,10X17,40				1 mm	85 Cel	8GX8	8G	-40 Cel					BOTTOM		R-PBGA-B100		3.6 V	1.703 mm		52 MHz	14 mm					68719476736 bit	2.7 V				NOT SPECIFIED	NOT SPECIFIED	NAND TYPE		18 mm
N25Q032A11ESE40G	Micron Technology	FLASH	INDUSTRIAL	8	SOP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS			1048576 words	1.8			32	SMALL OUTLINE					1.27 mm	85 Cel	1MX32	1M	-40 Cel					DUAL		S-PDSO-G8		2 V	2.16 mm		108 MHz	5.285 mm					33554432 bit	1.7 V				NOT SPECIFIED	NOT SPECIFIED			5.285 mm			1.8
N25Q032A13E1240E	Micron Technology	FLASH	INDUSTRIAL	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS		20 mA	33554432 words	3		3/3.3	1	GRID ARRAY, THIN PROFILE	BGA24,5X5,40		Flash Memories	20	1 mm	85 Cel	32MX1	32M	-40 Cel			TIN SILVER COPPER		BOTTOM	HARDWARE/SOFTWARE	R-PBGA-B24		3.6 V	1.2 mm	100000 Write/Erase Cycles	108 MHz	6 mm	Not Qualified		SPI		33554432 bit	2.7 V			e1			NOR TYPE	.0001 Amp	8 mm			3
N25Q128A11BF840F	Micron Technology	FLASH	INDUSTRIAL	8	SON	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		NO LEAD	SERIAL			20 mA	16777216 words	1.8		1.8	8	SMALL OUTLINE	SOLCC8,.3		Flash Memories	20	1.27 mm	85 Cel	16MX8	16M	-40 Cel					DUAL	HARDWARE/SOFTWARE	R-PDSO-N8				100000 Write/Erase Cycles	108 MHz		Not Qualified		SPI		134217728 bit							NOR TYPE	.00001 Amp
N25Q128A11E1240E	Micron Technology	FLASH	INDUSTRIAL	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS		20 mA	134217728 words	1.8		1.8	1	GRID ARRAY, THIN PROFILE	BGA24,5X5,40		Flash Memories	20	1 mm	85 Cel	128MX1	128M	-40 Cel			TIN SILVER COPPER		BOTTOM	HARDWARE/SOFTWARE	R-PBGA-B24		2 V	1.2 mm	100000 Write/Erase Cycles	108 MHz	6 mm	Not Qualified		SPI		134217728 bit	1.7 V			e1			NOR TYPE	.00001 Amp	8 mm			3
N25Q128A13BSF40F	Micron Technology	FLASH	INDUSTRIAL	16	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		20 mA	16777216 words	3		3/3.3	8	SMALL OUTLINE	SOP16,.4		Flash Memories	20	1.27 mm	85 Cel	16MX8	16M	-40 Cel					DUAL	HARDWARE/SOFTWARE	R-PDSO-G16		3.6 V	2.65 mm	100000 Write/Erase Cycles	108 MHz	7.5 mm	Not Qualified		SPI	BOTTOM	134217728 bit	2.7 V				30	260	NOR TYPE	.0001 Amp	10.3 mm			3

Flash Memory

Flash memory is a type of non-volatile computer memory that is commonly used in digital devices such as USB drives, solid-state drives, and digital cameras. It is a type of EEPROM (Electrically Erasable Programmable Read-Only Memory) that allows data to be erased and reprogrammed in blocks instead of one byte at a time. Flash memory uses a floating gate transistor to store data, which allows it to retain information even when the power is turned off.

Flash memory is widely used in digital devices because of its high capacity, small size, and fast access times. It is also more durable than other types of memory, such as hard disk drives, because it has no moving parts. This makes it ideal for use in portable devices that may be subject to physical shock or vibration.

There are two types of flash memory: NOR flash and NAND flash. NOR flash is faster than NAND flash, but it has lower density and higher cost per bit. NOR flash is typically used for code storage, such as firmware or boot code, because it provides faster access times. NAND flash has higher density and lower cost per bit, which makes it ideal for data storage applications.

Flash memory has a limited lifespan, as it can only be erased and reprogrammed a limited number of times. This is because the process of erasing and reprogramming the memory causes wear and tear on the floating gate transistor. However, modern flash memory devices have a sophisticated wear-leveling algorithm that distributes writes evenly across the memory, which extends the lifespan of the device.