INDUSTRIAL Flash Memory 2,400+

Reset All

Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Screening Level	Terminal Form	Parallel or Serial	Operating Mode	Sector Size (Words)	Maximum Supply Current	No. of Words	Nominal Supply Voltage / Vsup (V)	Toggle Bit	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Alternate Memory Width	Sub-Category	Minimum Data Retention Time	Terminal Pitch	Maximum Operating Temperature	Reverse Pinout	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	No. of Sectors/Size	Command User Interface	Terminal Finish	Ready or Busy	Terminal Position	No. of Ports	Write Protection	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Endurance	Maximum Clock Frequency (fCLK)	Width	Qualification	Serial Bus Type	Boot Block	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	Page Size (words)	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Type	Maximum Standby Current	Length	Common Flash Interface	Maximum Access Time	Programming Voltage (V)	Data Polling
S29PL127J60TFI130	Cypress Semiconductor	FLASH	INDUSTRIAL	56	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	4K,32K	70 mA	8388608 words	3	YES	3/3.3	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP56,.8,20		Flash Memories		.5 mm	85 Cel			8MX16	8M	-40 Cel	16,254	YES	Matte Tin (Sn)	YES	DUAL			R-PDSO-G56	3	3.6 V	1.2 mm			14 mm	Not Qualified		BOTTOM/TOP	134217728 bit	2.7 V	TOP AND BOTTOM BOOT BLOCK	8	e3	40	260	NOR TYPE	.000005 Amp	18.4 mm	YES	60 ns	3	YES
S29PL127J70BFI000	Cypress Semiconductor	FLASH	INDUSTRIAL	80	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	4K,32K	70 mA	8388608 words	3	YES	3/3.3	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA80,8X12,32		Flash Memories		.8 mm	85 Cel			8MX16	8M	-40 Cel	16,254	YES	Tin/Silver/Copper (Sn96.5Ag3.0Cu0.5)	YES	BOTTOM			R-PBGA-B80	3	3.6 V	1 mm			8 mm	Not Qualified		BOTTOM/TOP	134217728 bit	2.7 V	TOP AND BOTTOM BOOT BLOCK	8	e1	40	260	NOR TYPE	.000005 Amp	11 mm	YES	70 ns	3	YES
S34ML01G100BHI003	Cypress Semiconductor	FLASH	INDUSTRIAL	63	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	128K	30 mA	134217728 words	3.3	NO	3/3.3	8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA63,10X12,32		Flash Memories		.8 mm	85 Cel			128MX8	128M	-40 Cel	1K	YES		YES	BOTTOM			R-PBGA-B63	3	3.6 V	1 mm			9 mm	Not Qualified			1073741824 bit	2.7 V		2K			260	SLC NAND TYPE	.00005 Amp	11 mm		25 ns	3	NO
S34ML02G100TFB000	Cypress Semiconductor	FLASH	INDUSTRIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	PARALLEL	ASYNCHRONOUS			268435456 words	3.3			8	SMALL OUTLINE, THIN PROFILE					.5 mm	105 Cel			256MX8	256M	-40 Cel			MATTE TIN		DUAL			R-PDSO-G48	3	3.6 V	1.2 mm			12 mm				2147483648 bit	2.7 V			e3		260	SLC NAND TYPE		18.4 mm			3
S34ML04G100BHI000	Cypress Semiconductor	FLASH	INDUSTRIAL	63	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	128K	30 mA	536870912 words	3.3	NO	3/3.3	8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA64,10X12,32		Flash Memories		.8 mm	85 Cel			512MX8	512M	-40 Cel	4K	YES	TIN SILVER COPPER	YES	BOTTOM			R-PBGA-B63	3	3.6 V	1 mm			9 mm	Not Qualified			4294967296 bit	2.7 V		2K	e1	30	260	SLC NAND TYPE	.00005 Amp	11 mm		25 ns	3	NO
S34ML04G104BHV010	Cypress Semiconductor	FLASH	INDUSTRIAL	63	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS			268435456 words	3.3			16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH					.8 mm	105 Cel			256MX16	256M	-40 Cel					BOTTOM			R-PBGA-B63	3	3.6 V	1 mm			9 mm				4294967296 bit	2.7 V					260	SLC NAND TYPE		11 mm			3
S34ML04G200BHV003	Cypress Semiconductor	FLASH	INDUSTRIAL	63	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS			536870912 words	3.3			8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH					.8 mm	105 Cel			512MX8	512M	-40 Cel					BOTTOM			R-PBGA-B63	3	3.6 V	1 mm			9 mm				4294967296 bit	2.7 V					260	SLC NAND TYPE		11 mm			3
S34ML04G200TFI003	Cypress Semiconductor	FLASH	INDUSTRIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	128K	30 mA	536870912 words	3.3	NO	3/3.3	8	SMALL OUTLINE, THIN PROFILE	TSSOP48,.8,20		Flash Memories		.5 mm	85 Cel			512MX8	512M	-40 Cel	4K	YES	MATTE TIN	YES	DUAL			R-PDSO-G48	3	3.6 V	1.2 mm			12 mm	Not Qualified			4294967296 bit	2.7 V		2K	e3		260	SLC NAND TYPE	.00005 Amp	18.4 mm		25 ns	3	NO
S34MS04G200BHI000	Cypress Semiconductor	FLASH	INDUSTRIAL	63	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	128K	30 mA	536870912 words	1.8	NO	1.8	8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA64,10X12,32		Flash Memories		.8 mm	85 Cel			512MX8	512M	-40 Cel	4K	YES		YES	BOTTOM			R-PBGA-B63	3	1.95 V	1 mm			9 mm	Not Qualified			4294967296 bit	1.7 V		2K			260	SLC NAND TYPE	.00005 Amp	11 mm		45 ns	1.8	NO
S70FL01GSDSBHBC10	Infineon Technologies	FLASH	INDUSTRIAL	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	SERIAL	SYNCHRONOUS		200 mA	134217728 words	3			8	GRID ARRAY, THIN PROFILE	BGA24,5X5,40			20	1 mm	105 Cel		3-STATE	128MX8	128M	-40 Cel					BOTTOM		HARDWARE/SOFTWARE	R-PBGA-B24	3	3.6 V	1.2 mm	100000 Write/Erase Cycles	80 MHz	6 mm		SPI		1073741824 bit	2.7 V						NOR TYPE		8 mm			3
S70FL01GSDSMFB010	Infineon Technologies	FLASH	INDUSTRIAL	16	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	SERIAL	SYNCHRONOUS		200 mA	134217728 words	3			8	SMALL OUTLINE	SOP16,.4			20	1.27 mm	105 Cel		3-STATE	128MX8	128M	-40 Cel			MATTE TIN		DUAL		HARDWARE/SOFTWARE	R-PDSO-G16	3	3.6 V	2.65 mm	100000 Write/Erase Cycles	80 MHz	7.5 mm		SPI		1073741824 bit	2.7 V			e3			NOR TYPE		10.3 mm			3
S70GL02GS12FHIV10	Infineon Technologies	FLASH	INDUSTRIAL	64	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	128K	160 mA	134217728 words	3	YES	3/3.3	16	GRID ARRAY, LOW PROFILE	BGA64,8X8,40	8	Flash Memories		1 mm	85 Cel			128MX16	128M	-40 Cel	2K	YES		YES	BOTTOM			R-PBGA-B64	3	3.6 V	1.4 mm			11 mm	Not Qualified		BOTTOM/TOP	2147483648 bit	2.7 V		16/32				NOR TYPE	.0002 Amp	13 mm	YES	120 ns	3	YES
S70GL02GT12FHBV23	Infineon Technologies	FLASH	INDUSTRIAL	64	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	PARALLEL	ASYNCHRONOUS	128K	160 mA	134217728 words	3	NO		16	GRID ARRAY, LOW PROFILE	BGA64,8X8,40	8		0.2	1 mm	105 Cel		3-STATE	128MX16	128M	-40 Cel	2K	NO		YES	BOTTOM			R-PBGA-B64	3	3.6 V	1.4 mm	100000 Write/Erase Cycles		11 mm				2147483648 bit	2.7 V		16/32				NOR TYPE	.0004 Amp	13 mm	Y	120 ns	3	YES
S79FL01GSDSBHBC10	Infineon Technologies	FLASH	INDUSTRIAL	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	SERIAL	SYNCHRONOUS		200 mA	134217728 words	3			8	GRID ARRAY, THIN PROFILE	BGA24,5X5,40			20	1 mm	105 Cel		3-STATE	128MX8	128M	-40 Cel			TIN SILVER COPPER		BOTTOM		HARDWARE/SOFTWARE	R-PBGA-B24	3	3.6 V	1.2 mm	100000 Write/Erase Cycles	80 MHz	6 mm		SPI		1073741824 bit	3 V			e1			NOR TYPE		8 mm			3
TC58NVG0S3ETAI0	Toshiba	FLASH	INDUSTRIAL	48	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	ASYNCHRONOUS			134217728 words	3.3			8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH					.5 mm	85 Cel			128MX8	128M	-40 Cel					DUAL			R-PDSO-G48		3.6 V	1.2 mm							1073741824 bit	2.7 V								18.4 mm			3.3
TE28F160C3BD70A	Micron Technology	FLASH	INDUSTRIAL	48	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	4K,32K	18 mA	1048576 words	3	NO		16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP48,.8,20				.5 mm	85 Cel			1MX16	1M	-40 Cel	8,31		TIN LEAD		DUAL			R-PDSO-G48		3.6 V	1.2 mm			12 mm	Not Qualified		BOTTOM	16777216 bit	2.7 V	USER-SELECTABLE 3V OR 12V VPP; BOTTOM BOOT BLOCK		e0			NOR TYPE	.00002 Amp	18.4 mm		70 ns	3
TE28F160S5-70	Intel	FLASH	INDUSTRIAL	56	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	64K	80 mA	2097152 words	5	NO	5	8	SMALL OUTLINE, THIN PROFILE	TSSOP56,.8,20	8	Flash Memories		.5 mm	85 Cel			2MX8	2M	-40 Cel	32	YES		YES	DUAL			R-PDSO-G56		5.25 V	1.2 mm			14 mm	Not Qualified			16777216 bit	4.75 V	CONFIGURABLE AS 1M X 16	16/32	e0	NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.00002 Amp	18.4 mm	YES	70 ns	5	NO
TE28F200B5T80	Intel	FLASH	INDUSTRIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,96K,128K	70 mA	262144 words	5	NO	5	8	SMALL OUTLINE, THIN PROFILE	TSSOP48,.8,20	8	Flash Memories		.5 mm	85 Cel			256KX8	256K	-40 Cel	1,2,1,1	YES	TIN LEAD		DUAL			R-PDSO-G48		5.5 V	1.2 mm			12 mm	Not Qualified		TOP	2097152 bit	4.5 V	CONFG AS 128K X 16; USER SELECTABLE AS 5V OR 12V VPP; TOP BOOT BLOCK		e0			NOR TYPE	.000008 Amp	18.4 mm		80 ns	5	NO
TE28F320B3TA110	Intel	FLASH	INDUSTRIAL	48	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	4K,32K	55 mA	2097152 words	3	NO	1.8/3.3,3/3.3	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP48,.8,20		Flash Memories		.5 mm	85 Cel			2MX16	2M	-40 Cel	8,63	YES	TIN LEAD		DUAL			R-PDSO-G48		3.3 V	1.2 mm			12 mm	Not Qualified		TOP	33554432 bit	2.7 V	TOP BOOT BLOCK		e0			NOR TYPE	.000005 Amp	18.4 mm		110 ns	2.7	NO
TE28F320C3BD70	Intel	FLASH	INDUSTRIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	4K,32K	55 mA	2097152 words	3	NO	1.8/3.3,3/3.3	16	SMALL OUTLINE, THIN PROFILE	TSSOP48,.8,20		Flash Memories		.5 mm	85 Cel			2MX16	2M	-40 Cel	8,63	YES	TIN LEAD		DUAL			R-PDSO-G48		3.6 V	1.2 mm			12 mm	Not Qualified		BOTTOM	33554432 bit	2.7 V	USER-SELECTABLE 3V OR 12V VPP; BOTTOM BOOT BLOCK		e0			NOR TYPE	.000005 Amp	18.4 mm	YES	70 ns	3	NO
TE28F320J3C-110	Intel	FLASH	INDUSTRIAL	56	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	128K	80 mA	2097152 words	3	NO	3/3.3	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP56,.8,20	8	Flash Memories		.5 mm	85 Cel			2MX16	2M	-40 Cel	32	YES		YES	DUAL			R-PDSO-G56		3.6 V	1.2 mm			14 mm	Not Qualified			33554432 bit	2.7 V		4/8	e0	NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.00012 Amp	18.4 mm	YES	110 ns	2.7	NO
TP28F512-120	Intel	FLASH	INDUSTRIAL	32	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		30 mA	65536 words	5	NO	5	8	IN-LINE	DIP32,.6		Flash Memories		2.54 mm	85 Cel		3-STATE	64KX8	64K	-40 Cel		YES	TIN LEAD		DUAL			R-PDIP-T32		5.5 V	4.83 mm	1000 Write/Erase Cycles		15.24 mm	Not Qualified			524288 bit	4.5 V	100000 ERASE/PROGRAM CYCLES		e0			NOR TYPE	.0001 Amp	41.91 mm		120 ns	12	NO
XCF128XFT64C	Xilinx	FLASH	INDUSTRIAL	64	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS	16K,64K	53 mA	8388608 words	1.8	NO	1.8,1.8/3.3	16	GRID ARRAY, THIN PROFILE	BGA64,8X8,40		Flash Memories		1 mm	85 Cel			8MX16	8M	-40 Cel	4,127	YES	TIN LEAD	YES	BOTTOM			R-PBGA-B64	3	2 V	1.2 mm			10 mm	Not Qualified			134217728 bit	1.7 V	ASYNCHRONOUS READ MODE	4	e0	30	225	NOR TYPE	.000075 Amp	13 mm	YES	85 ns	1.8	NO
SST38VF6401B-70I/TV	Microchip Technology	FLASH	INDUSTRIAL	48	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	TS 16949	GULL WING	PARALLEL	ASYNCHRONOUS	32K	50 mA	4194304 words	3	YES	3/3.3	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP48,.8,20		Flash Memories	100	.5 mm	85 Cel		3-STATE	4MX16	4M	-40 Cel	128	YES	MATTE TIN	YES	DUAL	1		R-PDSO-G48		3.6 V	1.2 mm	100000 Write/Erase Cycles		12 mm	Not Qualified		BOTTOM	67108864 bit	2.7 V		8	e3			NOR TYPE	.00004 Amp	18.4 mm	YES	70 ns	3	YES
SST39VF020-70-4I-NHE	Microchip Technology	FLASH	INDUSTRIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	4K	30 mA	262144 words	3	YES	3/3.3	8	CHIP CARRIER	LDCC32,.5X.6		Flash Memories	100	1.27 mm	85 Cel		3-STATE	256KX8	256K	-40 Cel	64	YES	Matte Tin (Sn)		QUAD	1		R-PQCC-J32	3	3.6 V	2.8448 mm	100000 Write/Erase Cycles		11.43 mm	Not Qualified			2097152 bit	2.7 V			e3	40	245	NOR TYPE	.000015 Amp	13.97 mm		70 ns	3	YES
SST39VF3201-70-4I-EKE	Microchip Technology	FLASH	INDUSTRIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	2K	35 mA	2097152 words	3	YES	3/3.3	16	SMALL OUTLINE, THIN PROFILE	TSSOP48,.8,20		Flash Memories	100	.5 mm	85 Cel		3-STATE	2MX16	2M	-40 Cel	1K	YES	Matte Tin (Sn) - annealed		DUAL	1		R-PDSO-G48	3	3.6 V	1.2 mm	100000 Write/Erase Cycles		12 mm	Not Qualified		BOTTOM	33554432 bit	2.7 V	BOTTOM BOOT BLOCK		e3	40	260	NOR TYPE	.00002 Amp	18.4 mm	YES	70 ns	3	YES
SST39VF3202-70-4I-EKE	Microchip Technology	FLASH	INDUSTRIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	2K	35 mA	2097152 words	3	YES	3/3.3	16	SMALL OUTLINE, THIN PROFILE	TSSOP48,.8,20		Flash Memories	100	.5 mm	85 Cel		3-STATE	2MX16	2M	-40 Cel	1K	YES	MATTE TIN		DUAL	1		R-PDSO-G48		3.6 V	1.2 mm	100000 Write/Erase Cycles		12 mm	Not Qualified		TOP	33554432 bit	2.7 V	TOP BOOT BLOCK		e3			NOR TYPE	.00002 Amp	18.4 mm	YES	70 ns	3	YES
SST39VF3202C-70-4I-B3KE	Microchip Technology	FLASH	INDUSTRIAL	48	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	4K,32K	45 mA	2097152 words	3	YES	3/3.3	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA48,6X8,32		Flash Memories	100	.8 mm	85 Cel		3-STATE	2MX16	2M	-40 Cel	8,63	YES	TIN SILVER COPPER	YES	BOTTOM	1		R-PBGA-B48	3	3.6 V	1.2 mm	100000 Write/Erase Cycles		6 mm	Not Qualified		TOP	33554432 bit	2.7 V	TOP BOOT-BLOCK		e1	40	260	NOR TYPE	.00005 Amp	8 mm	YES	70 ns	3	YES
SST25LF020A-33-4I-SAE	Microchip Technology	FLASH	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		30 mA	2097152 words	3.3		3.3	1	SMALL OUTLINE	SOP8,.23		Flash Memories	100	1.27 mm	85 Cel		3-STATE	2MX1	2M	-40 Cel			Matte Tin (Sn)		DUAL	1	SOFTWARE	R-PDSO-G8	3	3.6 V	1.75 mm	100000 Write/Erase Cycles	33 MHz	3.9 mm	Not Qualified	SPI		2097152 bit	3 V			e3	40	260	NOR TYPE	.000015 Amp	4.9 mm			3.3
SST25VF064C-80-4I-SCE	Microchip Technology	FLASH	INDUSTRIAL	16	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		25 mA	64094208 words	3		3/3.3	1	SMALL OUTLINE	SOP16,.4		Flash Memories		1.27 mm	85 Cel			64MX1	64M	-40 Cel			MATTE TIN		DUAL		HARDWARE/SOFTWARE	R-PDSO-G16	1	3.6 V	2.65 mm	100000 Write/Erase Cycles	80 MHz	7.5 mm	Not Qualified	SPI		64094208 bit	2.7 V			e3		260	NOR TYPE	.00002 Amp	10.29 mm			2.7
SST26VF080AT-104I/SN	Microchip Technology	FLASH	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		25 mA	8388608 words	3			1	SMALL OUTLINE	SOP8,.23			100	1.27 mm	85 Cel		3-STATE	8MX1	8M	-40 Cel					DUAL	1	HARDWARE/SOFTWARE	R-PDSO-G8		3.6 V	1.75 mm	100000 Write/Erase Cycles	104 MHz	3.9 mm		SPI		8388608 bit	2.7 V				30	260	NOR TYPE	.00002 Amp	4.9 mm			3
SST26WF064CT-104I/TD	Microchip Technology	FLASH	INDUSTRIAL	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	TS 16949	BALL	SERIAL	SYNCHRONOUS		25 mA	67108864 words	1.8			1	GRID ARRAY, THIN PROFILE	BGA24,4X6,40			100	1 mm	85 Cel		3-STATE	64MX1	64M	-40 Cel					BOTTOM	1	HARDWARE/SOFTWARE	R-PBGA-B24		1.95 V	1.2 mm	100000 Write/Erase Cycles	104 MHz	6 mm		SPI		67108864 bit	1.65 V				NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.000015 Amp	8 mm			1.8
SST38VF6404-90-5I-B3KE	Microchip Technology	FLASH	INDUSTRIAL	48	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	TS 16949	BALL	PARALLEL	ASYNCHRONOUS	4K	50 mA	4194304 words	3	YES	3/3.3	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA48,6X8,32		Flash Memories	100	.8 mm	85 Cel		3-STATE	4MX16	4M	-40 Cel	1K	YES	Tin/Silver/Copper (Sn/Ag/Cu)	YES	BOTTOM	1		R-PBGA-B48	3	3.6 V	1.2 mm	100000 Write/Erase Cycles		6 mm	Not Qualified		TOP	67108864 bit	2.7 V	TOP BOOT BLOCK	4	e1	40	260	NOR TYPE	.00003 Amp	8 mm	YES	90 ns	3	YES
SST39SF020A-70-4I-NHE	Microchip Technology	FLASH	INDUSTRIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	4K	35 mA	262144 words	5	YES	5	8	CHIP CARRIER	LDCC32,.5X.6		Flash Memories	100	1.27 mm	85 Cel		3-STATE	256KX8	256K	-40 Cel	64	YES	Matte Tin (Sn)		QUAD	1		R-PQCC-J32	3	5.5 V	3.556 mm	100000 Write/Erase Cycles		11.43 mm	Not Qualified			2097152 bit	4.5 V			e3	40	245	NOR TYPE	.0001 Amp	13.97 mm		70 ns	5	YES
SST39VF1601-70-4I-B3KE	Microchip Technology	FLASH	INDUSTRIAL	48	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	2K	35 mA	1048576 words	3	YES	3/3.3	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA48,6X8,32		Flash Memories	100	.8 mm	85 Cel		3-STATE	1MX16	1M	-40 Cel	512	YES	TIN SILVER COPPER		BOTTOM	1		R-PBGA-B48	3	3.6 V	1.2 mm	100000 Write/Erase Cycles		6 mm	Not Qualified		BOTTOM	16777216 bit	2.7 V	BOTTOM BOOT BLOCK		e1			NOR TYPE	.00002 Amp	8 mm	YES	70 ns	3	YES
SST39VF3201-70-4I-EKE-T	Microchip Technology	FLASH	INDUSTRIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	2K	35 mA	2097152 words	3	YES	3/3.3	16	SMALL OUTLINE, THIN PROFILE	TSSOP48,.8,20		Flash Memories	100	.5 mm	85 Cel		3-STATE	2MX16	2M	-40 Cel	1K	YES	MATTE TIN		DUAL	1		R-PDSO-G48		3.6 V	1.2 mm	100000 Write/Erase Cycles		12 mm	Not Qualified		BOTTOM	33554432 bit	2.7 V	BOTTOM BOOT BLOCK		e3			NOR TYPE	.00002 Amp	18.4 mm	YES	70 ns	3	YES
SST39VF3201B-70-4I-EKE	Microchip Technology	FLASH	INDUSTRIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	2K	45 mA	2097152 words	3	YES	3/3.3	16	SMALL OUTLINE, THIN PROFILE	TSSOP48,.71,20		Flash Memories		.5 mm	85 Cel		3-STATE	2MX16	2M	-40 Cel	1K	YES	Matte Tin (Sn) - annealed		DUAL	1		R-PDSO-G48	3	3.6 V	1.2 mm	10000 Write/Erase Cycles		12 mm	Not Qualified		BOTTOM	33554432 bit	2.7 V	BOTTOM BOOT BLOCK		e3	40	260	NOR TYPE	.00002 Amp	18.4 mm	YES	70 ns	3	YES
SST39VF3202C-70-4I-B3KE-T	Microchip Technology	FLASH	INDUSTRIAL	48	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	4K,32K	15 mA	2097152 words	3	YES	3/3.3	16	GRID ARRAY, FINE PITCH	BGA48,6X8,32		Flash Memories	100	.8 mm	85 Cel		3-STATE	2MX16	2M	-40 Cel	8,63	YES	TIN SILVER COPPER	YES	BOTTOM	1		R-PBGA-B48		3.6 V	1.2 mm	100000 Write/Erase Cycles		6 mm	Not Qualified		TOP	33554432 bit	2.7 V	TOP BOOT BLOCK		e1			NOR TYPE	.00005 Amp	8 mm	YES	70 ns	3	YES
SST39VF800A-70-4I-B3KE	Microchip Technology	FLASH	INDUSTRIAL	48	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	2K	30 mA	524288 words	3	YES	3/3.3	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA48,6X8,32		Flash Memories	100	.8 mm	85 Cel		3-STATE	512KX16	512K	-40 Cel	256	YES	TIN SILVER COPPER		BOTTOM	1		R-PBGA-B48	3	3.6 V	1.2 mm	100000 Write/Erase Cycles		6 mm	Not Qualified			8388608 bit	2.7 V			e1			NOR TYPE	.00002 Amp	8 mm	YES	70 ns	3	YES
SST39VF800A-70-4I-EKE	Microchip Technology	FLASH	INDUSTRIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	2K	30 mA	524288 words	3	YES	3/3.3	16	SMALL OUTLINE, THIN PROFILE	TSSOP48,.8,20		Flash Memories	100	.5 mm	85 Cel		3-STATE	512KX16	512K	-40 Cel	256	YES	MATTE TIN		DUAL	1		R-PDSO-G48		3.6 V	1.2 mm	100000 Write/Erase Cycles		12 mm	Not Qualified			8388608 bit	2.7 V			e3			NOR TYPE	.00002 Amp	18.4 mm	YES	70 ns	3	YES
TMS28F210-15C4FNE4	Texas Instruments	FLASH	INDUSTRIAL	44	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	MOS		J BEND	PARALLEL	ASYNCHRONOUS		50 mA	65536 words	5	NO	5	16	CHIP CARRIER	LDCC44,.7SQ		Flash Memories		1.27 mm	85 Cel		3-STATE	64KX16	64K	-40 Cel		YES			QUAD			S-PQCC-J44		5.5 V	4.57 mm	10000 Write/Erase Cycles		16.5862 mm	Not Qualified			1048576 bit	4.5 V	BULK ERASE			NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.0001 Amp	16.5862 mm		150 ns	12	NO
TMS28F800AZYB80CDCDE	Texas Instruments	FLASH	INDUSTRIAL	40	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS			1048576 words	3			8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH					.5 mm	85 Cel			1MX8	1M	-40 Cel					DUAL			R-PDSO-G40		3.6 V	1.2 mm			10 mm			BOTTOM	8388608 bit	2.7 V	BOTTOM BOOT BLOCK							18.4 mm		80 ns	3
TMS29LF800B-120SE	Texas Instruments	FLASH	INDUSTRIAL	44	SOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		GULL WING	PARALLEL		16K,8K,32K,64K	60 mA	524288 words		YES	3/3.3	16	SMALL OUTLINE	SOP44,.63	8	Flash Memories		1.27 mm	85 Cel			512KX16	512K	-40 Cel	1,2,1,15	YES		YES	DUAL			R-PDSO-G44				100000 Write/Erase Cycles			Not Qualified		BOTTOM	8388608 bit					NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.000005 Amp			120 ns		YES
TMS28F512-12C3DUE	Texas Instruments	FLASH	INDUSTRIAL	32	TSOP1-R	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS		30 mA	65536 words	5	NO	5	8	SMALL OUTLINE, THIN PROFILE	TSSOP32,.8,20		Flash Memories		.5 mm	85 Cel	YES		64KX8	64K	-40 Cel		YES			DUAL			R-PDSO-G32		5.5 V	1.2 mm	1000 Write/Erase Cycles		8 mm	Not Qualified			524288 bit	4.5 V	BULK ERASE			NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.0001 Amp	18.415 mm		120 ns	12	NO
TMS28F040-10C2DUE	Texas Instruments	FLASH	INDUSTRIAL	40	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		GULL WING	PARALLEL		32K	40 mA	524288 words	5	YES	5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP40,.8,20		Flash Memories		.5 mm	85 Cel	YES		512KX8	512K	-40 Cel	16	YES			DUAL			R-PDSO-G40				100 Write/Erase Cycles			Not Qualified			4194304 bit					NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.0001 Amp			100 ns		YES
TMS29LF040-60C5DDE4	Texas Instruments	FLASH	INDUSTRIAL	32	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	MOS		GULL WING	PARALLEL	ASYNCHRONOUS	64K	60 mA	524288 words	3.3	YES	3.3	8	SMALL OUTLINE, THIN PROFILE	TSSOP32,.8,20		Flash Memories		.5 mm	85 Cel		3-STATE	512KX8	512K	-40 Cel	8	YES			DUAL			R-PDSO-G32		3.6 V	1.2 mm	100000 Write/Erase Cycles		8 mm	Not Qualified			4194304 bit	3 V				NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.0001 Amp	18.415 mm		60 ns	3	YES
TMS29F040-90C5FME	Texas Instruments	FLASH	INDUSTRIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	64K	60 mA	524288 words	5	YES	5	8	CHIP CARRIER	LDCC32,.5X.6		Flash Memories		1.27 mm	85 Cel		3-STATE	512KX8	512K	-40 Cel	8	YES			QUAD			R-PQCC-J32		5.5 V	3.56 mm	100000 Write/Erase Cycles		11.43 mm	Not Qualified			4194304 bit	4.5 V	100000 PROGRAM/ERASE CYCLES			NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.0001 Amp	13.97 mm		90 ns	5	YES
TMS28F004AMT60CDBJE	Texas Instruments	FLASH	INDUSTRIAL	44	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	MOS		GULL WING	PARALLEL	ASYNCHRONOUS			524288 words	5			8	SMALL OUTLINE					1.27 mm	85 Cel		3-STATE	512KX8	512K	-40 Cel					DUAL			R-PDSO-G44		5.5 V	2.63 mm			13.3 mm	Not Qualified		TOP	4194304 bit	3 V						NOR TYPE		28.2 mm		60 ns	12

Flash Memory

Flash memory is a type of non-volatile computer memory that is commonly used in digital devices such as USB drives, solid-state drives, and digital cameras. It is a type of EEPROM (Electrically Erasable Programmable Read-Only Memory) that allows data to be erased and reprogrammed in blocks instead of one byte at a time. Flash memory uses a floating gate transistor to store data, which allows it to retain information even when the power is turned off.

Flash memory is widely used in digital devices because of its high capacity, small size, and fast access times. It is also more durable than other types of memory, such as hard disk drives, because it has no moving parts. This makes it ideal for use in portable devices that may be subject to physical shock or vibration.

There are two types of flash memory: NOR flash and NAND flash. NOR flash is faster than NAND flash, but it has lower density and higher cost per bit. NOR flash is typically used for code storage, such as firmware or boot code, because it provides faster access times. NAND flash has higher density and lower cost per bit, which makes it ideal for data storage applications.

Flash memory has a limited lifespan, as it can only be erased and reprogrammed a limited number of times. This is because the process of erasing and reprogramming the memory causes wear and tear on the floating gate transistor. However, modern flash memory devices have a sophisticated wear-leveling algorithm that distributes writes evenly across the memory, which extends the lifespan of the device.