MILITARY Flash Memory 134

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Screening Level	Terminal Form	Parallel or Serial	Operating Mode	Sector Size (Words)	Maximum Supply Current	No. of Words	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Toggle Bit	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Alternate Memory Width	Sub-Category	Minimum Data Retention Time	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	No. of Sectors/Size	Command User Interface	Terminal Finish	Ready or Busy	Terminal Position	Write Protection	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Endurance	Maximum Clock Frequency (fCLK)	Width	Qualification	Serial Bus Type	Boot Block	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	Page Size (words)	JESD-609 Code	Peak Reflow Temperature (C)	Type	Maximum Standby Current	Length	Maximum Access Time	Programming Voltage (V)	Data Polling
AM29F040B-120PE	Spansion	FLASH	MILITARY	32	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	64K	40 mA	524288 words		5	YES	5	8	IN-LINE	DIP32,.6		Flash Memories		2.54 mm	125 Cel		512KX8	512K	-55 Cel	8	YES	TIN LEAD		DUAL		R-PDIP-T32	3	5.5 V	5.715 mm	1000000 Write/Erase Cycles		15.24 mm	Not Qualified			4194304 bit	4.5 V			e0	260	NOR TYPE	.000005 Amp	42.037 mm	120 ns	5	YES
AM29F040B-120PEB	Spansion	FLASH	MILITARY	32	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS			524288 words		5			8	IN-LINE				20	2.54 mm	125 Cel		512KX8	512K	-55 Cel			TIN LEAD		DUAL		R-PDIP-T32		5.5 V	5.715 mm			15.24 mm	Not Qualified			4194304 bit	4.5 V	1000K PROGRAM/ERASE CYCLES; DATA RETENTION 20 YEARS		e0		NOR TYPE		42.037 mm	120 ns	5
SM28VLT32SHKN	Texas Instruments	FLASH	MILITARY	14	DFP	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		160 mA	2097152 words		1.9	YES	1.9,3.3	16	FLATPACK	SOP14,1,40		Flash Memories	0.11	1.02 mm	210 Cel		2MX16	2M	-55 Cel			GOLD		DUAL	HARDWARE	R-CDFP-G14		3.6 V	3.05 mm	1000 Write/Erase Cycles	1 MHz	8 mm	Not Qualified	SPI		33554432 bit	3.1 V			e4		NOR TYPE		20 mm		1.8	YES
AM29F040B-90JE	Spansion	FLASH	MILITARY	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	64K	40 mA	524288 words		5	YES	5	8	CHIP CARRIER	LDCC32,.5X.6		Flash Memories		1.27 mm	125 Cel		512KX8	512K	-55 Cel	8	YES	TIN LEAD		QUAD		R-PQCC-J32	3	5.5 V	3.556 mm	1000000 Write/Erase Cycles		11.43 mm	Not Qualified			4194304 bit	4.5 V			e0	260	NOR TYPE	.000005 Amp	13.97 mm	90 ns	5	YES
AM29F400BB-70SE	Cypress Semiconductor	FLASH	MILITARY	44	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS			262144 words		5			16	SMALL OUTLINE		8			1.27 mm	125 Cel		256KX16	256K	-55 Cel			TIN LEAD		DUAL		R-PDSO-G44		5.5 V	2.8 mm			13.3 mm			BOTTOM	4194304 bit	4.5 V	BOTTOM BOOT BLOCK		e0		NOR TYPE		28.2 mm	70 ns	5
ACT-F512K8N-070P4Q	Cobham Plc	FLASH MODULE	MILITARY	32	DIP	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS	38535Q/M;38534H;883B	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	64K	60 mA	524288 words		5	YES	5	8	MICROELECTRONIC ASSEMBLY	DIP32,.6		Flash Memories		2.54 mm	125 Cel		512KX8	512K	-55 Cel	8	YES			DUAL		R-CDMA-T32		5.5 V		100000 Write/Erase Cycles			Not Qualified			4194304 bit	4.5 V	100K ERASE/PROGRAM CYCLES				NOR TYPE	.0016 Amp		70 ns	5	YES
AM29F800BB-55SE	Spansion	FLASH	MILITARY	44	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	60 mA	524288 words		5	YES	5	16	SMALL OUTLINE	SOP44,.63	8	Flash Memories		1.27 mm	125 Cel		512KX16	512K	-55 Cel	1,2,1,15	YES	TIN LEAD	YES	DUAL		R-PDSO-G44	3	5.5 V	2.8 mm	1000000 Write/Erase Cycles		13.3 mm	Not Qualified		BOTTOM	8388608 bit	4.5 V	BOTTOM BOOT BLOCK		e0	260	NOR TYPE	.001 Amp	28.2 mm	55 ns	5	YES
MS28F016SV-85	Intel	FLASH	MILITARY	56	SSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	MOS	MIL-PRF-38535 Class N	GULL WING	PARALLEL	ASYNCHRONOUS	64K	135 mA	2097152 words		5	NO	3.3/5	8	SMALL OUTLINE, SHRINK PITCH	SOP56,.6,32	16	Flash Memories		.8 mm	125 Cel	3-STATE	2MX8	2M	-55 Cel	32	YES	Tin/Lead (Sn/Pb)	YES	DUAL		R-PDSO-G56		5.5 V	1.9 mm			13.3 mm	Not Qualified			16777216 bit	3.15 V	USER-SELECTABLE 5V OR 12V VPP	128/256	e0		NOR TYPE	.00005 Amp	23.7 mm	85 ns	5	NO
AM29F200BT-50EE	Spansion	FLASH	MILITARY	48	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	60 mA	131072 words		5	YES	5	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP48,.8,20	8	Flash Memories	20	.5 mm	125 Cel		128KX16	128K	-55 Cel	1,2,1,3	YES	TIN LEAD	YES	DUAL		R-PDSO-G48	3	5.25 V	1.2 mm	1000000 Write/Erase Cycles		12 mm	Not Qualified		TOP	2097152 bit	4.75 V	MIN 1000K WRITE/ERASE CYCLE ;20 YEAR DATA RETENTION; TOP BOOT BLOCK		e0	260	NOR TYPE	.000005 Amp	18.4 mm	50 ns	5	YES
S25FL256SAGBHEA00	Infineon Technologies	FLASH	MILITARY	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS		100 mA	33554432 words	COMMON	3			8	GRID ARRAY, THIN PROFILE	BGA24,5X5,40	4		20	1 mm	125 Cel	3-STATE	32MX8	32M	-55 Cel			TIN SILVER COPPER		BOTTOM	HARDWARE/SOFTWARE	R-PBGA-B24	3	3.6 V	1.2 mm	100 Write/Erase Cycles	133 MHz	6 mm		SPI		268435456 bit	2.7 V			e1		NOR TYPE	.0003 Amp	8 mm		3
S25FL512SAGBAEC10	Infineon Technologies	FLASH	MILITARY	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS		100 mA	67108864 words		3			8	GRID ARRAY, THIN PROFILE	BGA24,5X5,40			20	1 mm	125 Cel	3-STATE	64MX8	64M	-55 Cel			TIN LEAD		BOTTOM	HARDWARE/SOFTWARE	R-PBGA-B24	3	3.6 V	1.2 mm	100000 Write/Erase Cycles	133 MHz	6 mm		SPI		536870912 bit	2.7 V			e0		NOR TYPE	.0003 Amp	8 mm		3
SMJ28F010B-20JDDM	Texas Instruments	FLASH	MILITARY	32	DIP	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS	38535Q/M;38534H;883B	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		15 mA	131072 words		5	NO	5	8	IN-LINE	DIP32,.6		Flash Memories		2.54 mm	125 Cel		128KX8	128K	-55 Cel		YES			DUAL		R-CDIP-T32		5.5 V	4.57 mm	10000 Write/Erase Cycles		15.24 mm	Not Qualified			1048576 bit	4.5 V	10000 PROGRAM/ ERASE CYCLE				NOR TYPE	.0001 Amp	40.64 mm	200 ns	12	NO
SMJ28F010B-15FEM	Texas Instruments	FLASH	MILITARY	28	QCCN	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	YES	1	CMOS	38535Q/M;38534H;883B	NO LEAD	PARALLEL	ASYNCHRONOUS		15 mA	131072 words		5	NO	5	8	CHIP CARRIER	LCC32,.45X.55		Flash Memories		1.27 mm	125 Cel		128KX8	128K	-55 Cel		YES			QUAD		R-CQCC-N28		5.5 V	2.01 mm	10000 Write/Erase Cycles		8.89 mm	Not Qualified			1048576 bit	4.5 V	10000 PROGRAM/ ERASE CYCLE				NOR TYPE	.0001 Amp	13.97 mm	150 ns	12	NO
5962-9089906QYA	Texas Instruments	FLASH	MILITARY	32	QCCN	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	YES	1	CMOS		NO LEAD	PARALLEL	ASYNCHRONOUS			131072 words		5			8	CHIP CARRIER						125 Cel		128KX8	128K	-55 Cel			TIN LEAD		QUAD		R-CQCC-N32		5.5 V					Not Qualified			1048576 bit	4.5 V			e0					200 ns	12
SMJ29F816FGM	Texas Instruments	FLASH	MILITARY	18	QCCN	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS			2048 words		5			8	CHIP CARRIER					1.27 mm	125 Cel		2KX8	2K	-55 Cel					QUAD		R-CQCC-N18		5.5 V	1.91 mm			7.366 mm	Not Qualified			16384 bit	4.5 V					NOR TYPE		10.82 mm		5
5962-9089911QYA	Texas Instruments	FLASH	MILITARY	32	QCCN	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	YES	1	CMOS		NO LEAD	PARALLEL	ASYNCHRONOUS			131072 words		5			8	CHIP CARRIER						125 Cel		128KX8	128K	-55 Cel			TIN LEAD		QUAD		R-CQCC-N32		5.5 V					Not Qualified			1048576 bit	4.5 V			e0					200 ns	12
SMJ28F010B-15JDDM	Texas Instruments	FLASH	MILITARY	32	DIP	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS	38535Q/M;38534H;883B	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		15 mA	131072 words		5	NO	5	8	IN-LINE	DIP32,.6		Flash Memories		2.54 mm	125 Cel		128KX8	128K	-55 Cel		YES			DUAL		R-CDIP-T32		5.5 V	4.57 mm	10000 Write/Erase Cycles		15.24 mm	Not Qualified			1048576 bit	4.5 V	10000 PROGRAM/ ERASE CYCLE				NOR TYPE	.0001 Amp	40.64 mm	150 ns	12	NO
SMJ28F010B-12FEM	Texas Instruments	FLASH	MILITARY	28	QCCN	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	YES	1	CMOS	38535Q/M;38534H;883B	NO LEAD	PARALLEL	ASYNCHRONOUS		15 mA	131072 words		5	NO	5	8	CHIP CARRIER	LCC32,.45X.55		Flash Memories		1.27 mm	125 Cel		128KX8	128K	-55 Cel		YES			QUAD		R-CQCC-N28		5.5 V	2.01 mm	10000 Write/Erase Cycles		8.89 mm	Not Qualified			1048576 bit	4.5 V	10000 PROGRAM/ ERASE CYCLE				NOR TYPE	.0001 Amp	13.97 mm	120 ns	12	NO
5962-9089911QXA	Texas Instruments	FLASH	MILITARY	32	DIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS			131072 words		5			8	IN-LINE						125 Cel		128KX8	128K	-55 Cel			TIN LEAD		DUAL		R-GDIP-T32		5.5 V					Not Qualified			1048576 bit	4.5 V			e0					200 ns	12
5962-9089908QYA	Texas Instruments	FLASH	MILITARY	32	QCCN	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	YES	1	CMOS		NO LEAD	PARALLEL	ASYNCHRONOUS			131072 words		5			8	CHIP CARRIER						125 Cel		128KX8	128K	-55 Cel			TIN LEAD		QUAD		R-CQCC-N32		5.5 V					Not Qualified			1048576 bit	4.5 V			e0					120 ns	12
5962-9089903QYX	Texas Instruments	FLASH	MILITARY	32	QCCN	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	YES	1	CMOS	MIL-PRF-38535 Class Q	NO LEAD	PARALLEL	ASYNCHRONOUS			131072 words		5			8	CHIP CARRIER						125 Cel		128KX8	128K	-55 Cel			TIN LEAD		QUAD		R-CQCC-N32		5.5 V					Not Qualified			1048576 bit	4.5 V			e0					150 ns	12
5962-9089912QXX	Texas Instruments	FLASH	MILITARY	32	DIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS	MIL-PRF-38535 Class Q	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS			131072 words		5			8	IN-LINE						125 Cel		128KX8	128K	-55 Cel			TIN LEAD		DUAL		R-GDIP-T32		5.5 V					Not Qualified			1048576 bit	4.5 V			e0					150 ns	12
5962-9089913QYA	Texas Instruments	FLASH	MILITARY	32	QCCN	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	YES	1	CMOS		NO LEAD	PARALLEL	ASYNCHRONOUS			131072 words		5			8	CHIP CARRIER						125 Cel		128KX8	128K	-55 Cel			TIN LEAD		QUAD		R-CQCC-N32		5.5 V					Not Qualified			1048576 bit	4.5 V			e0					120 ns	12
5962-9089912QYX	Texas Instruments	FLASH	MILITARY	32	QCCN	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	YES	1	CMOS	MIL-PRF-38535 Class Q	NO LEAD	PARALLEL	ASYNCHRONOUS			131072 words		5			8	CHIP CARRIER						125 Cel		128KX8	128K	-55 Cel			TIN LEAD		QUAD		R-CQCC-N32		5.5 V					Not Qualified			1048576 bit	4.5 V			e0					150 ns	12
5962-9089911QYX	Texas Instruments	FLASH	MILITARY	32	QCCN	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	YES	1	CMOS	MIL-PRF-38535 Class Q	NO LEAD	PARALLEL	ASYNCHRONOUS			131072 words		5			8	CHIP CARRIER						125 Cel		128KX8	128K	-55 Cel			TIN LEAD		QUAD		R-CQCC-N32		5.5 V					Not Qualified			1048576 bit	4.5 V			e0					200 ns	12
5962-9089902QYA	Texas Instruments	FLASH	MILITARY	32	QCCN	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	YES	1	CMOS		NO LEAD	PARALLEL	ASYNCHRONOUS			131072 words		5			8	CHIP CARRIER						125 Cel		128KX8	128K	-55 Cel			TIN LEAD		QUAD		R-CQCC-N32		5.5 V					Not Qualified			1048576 bit	4.5 V			e0					200 ns	12
SMJ28F010B-12JDDM	Texas Instruments	FLASH	MILITARY	32	DIP	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS	38535Q/M;38534H;883B	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		15 mA	131072 words		5	NO	5	8	IN-LINE	DIP32,.6		Flash Memories		2.54 mm	125 Cel		128KX8	128K	-55 Cel		YES			DUAL		R-CDIP-T32		5.5 V	4.57 mm	10000 Write/Erase Cycles		15.24 mm	Not Qualified			1048576 bit	4.5 V	10000 PROGRAM/ ERASE CYCLE				NOR TYPE	.0001 Amp	40.64 mm	120 ns	12	NO
5962-9089908QYX	Texas Instruments	FLASH	MILITARY	32	QCCN	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	YES	1	CMOS	MIL-PRF-38535 Class Q	NO LEAD	PARALLEL	ASYNCHRONOUS			131072 words		5			8	CHIP CARRIER						125 Cel		128KX8	128K	-55 Cel			TIN LEAD		QUAD		R-CQCC-N32		5.5 V					Not Qualified			1048576 bit	4.5 V			e0					120 ns	12
5962-9089907QXA	Texas Instruments	FLASH	MILITARY	32	DIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS			131072 words		5			8	IN-LINE						125 Cel		128KX8	128K	-55 Cel			TIN LEAD		DUAL		R-GDIP-T32		5.5 V					Not Qualified			1048576 bit	4.5 V			e0					150 ns	12
5962-9089912QYA	Texas Instruments	FLASH	MILITARY	32	QCCN	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	YES	1	CMOS		NO LEAD	PARALLEL	ASYNCHRONOUS			131072 words		5			8	CHIP CARRIER						125 Cel		128KX8	128K	-55 Cel			TIN LEAD		QUAD		R-CQCC-N32		5.5 V					Not Qualified			1048576 bit	4.5 V			e0					150 ns	12
5962-9089906QXX	Texas Instruments	FLASH	MILITARY	32	DIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS	MIL-PRF-38535 Class Q	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS			131072 words		5			8	IN-LINE						125 Cel		128KX8	128K	-55 Cel			TIN LEAD		DUAL		R-GDIP-T32		5.5 V					Not Qualified			1048576 bit	4.5 V			e0					200 ns	12
5962-9089911QXX	Texas Instruments	FLASH	MILITARY	32	DIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS	MIL-PRF-38535 Class Q	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS			131072 words		5			8	IN-LINE						125 Cel		128KX8	128K	-55 Cel			TIN LEAD		DUAL		R-GDIP-T32		5.5 V					Not Qualified			1048576 bit	4.5 V			e0					200 ns	12
5962-9089908QXA	Texas Instruments	FLASH	MILITARY	32	DIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS			131072 words		5			8	IN-LINE						125 Cel		128KX8	128K	-55 Cel			TIN LEAD		DUAL		R-GDIP-T32		5.5 V					Not Qualified			1048576 bit	4.5 V			e0					120 ns	12
5962-9089908QXX	Texas Instruments	FLASH	MILITARY	32	DIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS	MIL-PRF-38535 Class Q	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS			131072 words		5			8	IN-LINE						125 Cel		128KX8	128K	-55 Cel			TIN LEAD		DUAL		R-GDIP-T32		5.5 V					Not Qualified			1048576 bit	4.5 V			e0					120 ns	12
5962-9089902QYX	Texas Instruments	FLASH	MILITARY	32	QCCN	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	YES	1	CMOS	MIL-PRF-38535 Class Q	NO LEAD	PARALLEL	ASYNCHRONOUS			131072 words		5			8	CHIP CARRIER						125 Cel		128KX8	128K	-55 Cel			TIN LEAD		QUAD		R-CQCC-N32		5.5 V					Not Qualified			1048576 bit	4.5 V			e0					200 ns	12
5962-9089906QYX	Texas Instruments	FLASH	MILITARY	32	QCCN	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	YES	1	CMOS	MIL-PRF-38535 Class Q	NO LEAD	PARALLEL	ASYNCHRONOUS			131072 words		5			8	CHIP CARRIER						125 Cel		128KX8	128K	-55 Cel			TIN LEAD		QUAD		R-CQCC-N32		5.5 V					Not Qualified			1048576 bit	4.5 V			e0					200 ns	12
5962-9089904QXA	Texas Instruments	FLASH	MILITARY	32	DIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS			131072 words		5			8	IN-LINE						125 Cel		128KX8	128K	-55 Cel			TIN LEAD		DUAL		R-GDIP-T32		5.5 V					Not Qualified			1048576 bit	4.5 V			e0					120 ns	12
5962-9089906QXA	Texas Instruments	FLASH	MILITARY	32	DIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS			131072 words		5			8	IN-LINE						125 Cel		128KX8	128K	-55 Cel			TIN LEAD		DUAL		R-GDIP-T32		5.5 V					Not Qualified			1048576 bit	4.5 V			e0					200 ns	12
5962-9089902QXA	Texas Instruments	FLASH	MILITARY	32	DIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS			131072 words		5			8	IN-LINE						125 Cel		128KX8	128K	-55 Cel			TIN LEAD		DUAL		R-GDIP-T32		5.5 V					Not Qualified			1048576 bit	4.5 V			e0					200 ns	12
5962-9089907QYA	Texas Instruments	FLASH	MILITARY	32	QCCN	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	YES	1	CMOS		NO LEAD	PARALLEL	ASYNCHRONOUS			131072 words		5			8	CHIP CARRIER						125 Cel		128KX8	128K	-55 Cel			TIN LEAD		QUAD		R-CQCC-N32		5.5 V					Not Qualified			1048576 bit	4.5 V			e0					150 ns	12
5962-9089907QYX	Texas Instruments	FLASH	MILITARY	32	QCCN	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	YES	1	CMOS	MIL-PRF-38535 Class Q	NO LEAD	PARALLEL	ASYNCHRONOUS			131072 words		5			8	CHIP CARRIER						125 Cel		128KX8	128K	-55 Cel			TIN LEAD		QUAD		R-CQCC-N32		5.5 V					Not Qualified			1048576 bit	4.5 V			e0					150 ns	12
5962-9089904QYX	Texas Instruments	FLASH	MILITARY	32	QCCN	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	YES	1	CMOS	MIL-PRF-38535 Class Q	NO LEAD	PARALLEL	ASYNCHRONOUS			131072 words		5			8	CHIP CARRIER						125 Cel		128KX8	128K	-55 Cel			TIN LEAD		QUAD		R-CQCC-N32		5.5 V					Not Qualified			1048576 bit	4.5 V			e0					120 ns	12
5962-9089904QXX	Texas Instruments	FLASH	MILITARY	32	DIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS	MIL-PRF-38535 Class Q	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS			131072 words		5			8	IN-LINE						125 Cel		128KX8	128K	-55 Cel			TIN LEAD		DUAL		R-GDIP-T32		5.5 V					Not Qualified			1048576 bit	4.5 V			e0					120 ns	12
SMJ28F010B-20FEM	Texas Instruments	FLASH	MILITARY	28	QCCN	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	YES	1	CMOS	38535Q/M;38534H;883B	NO LEAD	PARALLEL	ASYNCHRONOUS		15 mA	131072 words		5	NO	5	8	CHIP CARRIER	LCC32,.45X.55		Flash Memories		1.27 mm	125 Cel		128KX8	128K	-55 Cel		YES			QUAD		R-CQCC-N28		5.5 V	2.01 mm	10000 Write/Erase Cycles		8.89 mm	Not Qualified			1048576 bit	4.5 V	10000 PROGRAM/ ERASE CYCLE				NOR TYPE	.0001 Amp	13.97 mm	200 ns	12	NO
5962-9089902QXX	Texas Instruments	FLASH	MILITARY	32	DIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS	MIL-PRF-38535 Class Q	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS			131072 words		5			8	IN-LINE						125 Cel		128KX8	128K	-55 Cel			TIN LEAD		DUAL		R-GDIP-T32		5.5 V					Not Qualified			1048576 bit	4.5 V			e0					200 ns	12
5962-9089913QXX	Texas Instruments	FLASH	MILITARY	32	DIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS	MIL-PRF-38535 Class Q	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS			131072 words		5			8	IN-LINE						125 Cel		128KX8	128K	-55 Cel			TIN LEAD		DUAL		R-GDIP-T32		5.5 V					Not Qualified			1048576 bit	4.5 V			e0					120 ns	12
5962-9089904QYA	Texas Instruments	FLASH	MILITARY	32	QCCN	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	YES	1	CMOS		NO LEAD	PARALLEL	ASYNCHRONOUS			131072 words		5			8	CHIP CARRIER						125 Cel		128KX8	128K	-55 Cel			TIN LEAD		QUAD		R-CQCC-N32		5.5 V					Not Qualified			1048576 bit	4.5 V			e0					120 ns	12
5962-9089903QYA	Texas Instruments	FLASH	MILITARY	32	QCCN	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	YES	1	CMOS		NO LEAD	PARALLEL	ASYNCHRONOUS			131072 words		5			8	CHIP CARRIER						125 Cel		128KX8	128K	-55 Cel			TIN LEAD		QUAD		R-CQCC-N32		5.5 V					Not Qualified			1048576 bit	4.5 V			e0					150 ns	12

Flash Memory

Flash memory is a type of non-volatile computer memory that is commonly used in digital devices such as USB drives, solid-state drives, and digital cameras. It is a type of EEPROM (Electrically Erasable Programmable Read-Only Memory) that allows data to be erased and reprogrammed in blocks instead of one byte at a time. Flash memory uses a floating gate transistor to store data, which allows it to retain information even when the power is turned off.

Flash memory is widely used in digital devices because of its high capacity, small size, and fast access times. It is also more durable than other types of memory, such as hard disk drives, because it has no moving parts. This makes it ideal for use in portable devices that may be subject to physical shock or vibration.

There are two types of flash memory: NOR flash and NAND flash. NOR flash is faster than NAND flash, but it has lower density and higher cost per bit. NOR flash is typically used for code storage, such as firmware or boot code, because it provides faster access times. NAND flash has higher density and lower cost per bit, which makes it ideal for data storage applications.

Flash memory has a limited lifespan, as it can only be erased and reprogrammed a limited number of times. This is because the process of erasing and reprogramming the memory causes wear and tear on the floating gate transistor. However, modern flash memory devices have a sophisticated wear-leveling algorithm that distributes writes evenly across the memory, which extends the lifespan of the device.