MILITARY Flash Memory 134

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Terminal Form	Parallel or Serial	Operating Mode	Sector Size (Words)	Maximum Supply Current	No. of Words	Nominal Supply Voltage / Vsup (V)	Toggle Bit	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Alternate Memory Width	Sub-Category	Minimum Data Retention Time	Terminal Pitch	Maximum Operating Temperature	Reverse Pinout	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	No. of Sectors/Size	Command User Interface	Terminal Finish	Ready or Busy	Terminal Position	Write Protection	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Endurance	Maximum Clock Frequency (fCLK)	Width	Qualification	Serial Bus Type	Boot Block	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Type	Maximum Standby Current	Length	Common Flash Interface	Maximum Access Time	Programming Voltage (V)	Data Polling
AM29LV160BT-120WCK	Infineon Technologies	FLASH	MILITARY	48	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL		16K,8K,32K,64K	30 mA	1048576 words		YES	3/3.3	16	GRID ARRAY, FINE PITCH	BGA48,6X8,32	8	Flash Memories		.8 mm	125 Cel			1MX16	1M	-55 Cel	1,2,1,31	YES		YES	BOTTOM		R-PBGA-B48							Not Qualified		TOP	16777216 bit						NOR TYPE	.000005 Amp		YES	120 ns		YES
AM29LV160BB-90WCK	Infineon Technologies	FLASH	MILITARY	48	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL		16K,8K,32K,64K	30 mA	1048576 words		YES	3/3.3	16	GRID ARRAY, FINE PITCH	BGA48,6X8,32	8	Flash Memories		.8 mm	125 Cel			1MX16	1M	-55 Cel	1,2,1,31	YES		YES	BOTTOM		R-PBGA-B48							Not Qualified		BOTTOM	16777216 bit						NOR TYPE	.000005 Amp		YES	90 ns		YES
AM29LV160BB-120SK	Infineon Technologies	FLASH	MILITARY	44	SOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	PARALLEL		16K,8K,32K,64K	30 mA	1048576 words		YES	3/3.3	16	SMALL OUTLINE	SOP44,.63	8	Flash Memories		1.27 mm	125 Cel			1MX16	1M	-55 Cel	1,2,1,31	YES			DUAL		R-PDSO-G44							Not Qualified		BOTTOM	16777216 bit						NOR TYPE	.000005 Amp		YES	120 ns		YES
S25FL512SDSBHEA10	Infineon Technologies	FLASH	MILITARY	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	SERIAL	SYNCHRONOUS		100 mA	67108864 words	3			8	GRID ARRAY, THIN PROFILE	BGA24,5X5,40			20	1 mm	125 Cel		3-STATE	64MX8	64M	-55 Cel					BOTTOM	HARDWARE/SOFTWARE	R-PBGA-B24		3.6 V	1.2 mm	100000 Write/Erase Cycles	80 MHz	6 mm		SPI		536870912 bit	2.7 V					NOR TYPE	.0003 Amp	8 mm			3
AM29F002BB-90EK	Infineon Technologies	FLASH	MILITARY	32	TSOP1	RECTANGULAR	UNSPECIFIED	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	40 mA	262144 words	5	YES		8	SMALL OUTLINE, THIN PROFILE	TSSOP32,.8,20			10	.5 mm	125 Cel		3-STATE	256KX8	256K	-55 Cel	1,2,1,3	YES		YES	DUAL		R-XDSO-G32		5.5 V	1.2 mm	1000000 Write/Erase Cycles		8 mm			BOTTOM	2097152 bit	4.5 V					NOR TYPE	.000005 Amp	18.4 mm		90 ns	5	YES
S25FL512SAGBAE213	Infineon Technologies	FLASH	MILITARY	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	SERIAL	SYNCHRONOUS		100 mA	67108864 words	3			8	GRID ARRAY, THIN PROFILE	BGA24,5X5,40			20	1 mm	125 Cel		3-STATE	64MX8	64M	-55 Cel					BOTTOM	HARDWARE/SOFTWARE	R-PBGA-B24		3.6 V	1.2 mm	100000 Write/Erase Cycles	133 MHz	6 mm		SPI		536870912 bit	2.7 V					NOR TYPE	.0003 Amp	8 mm			3
S25FL512SDSBHE210	Infineon Technologies	FLASH	MILITARY	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	SERIAL	SYNCHRONOUS		100 mA	67108864 words	3			8	GRID ARRAY, THIN PROFILE	BGA24,5X5,40			20	1 mm	125 Cel		3-STATE	64MX8	64M	-55 Cel					BOTTOM	HARDWARE/SOFTWARE	R-PBGA-B24		3.6 V	1.2 mm	100000 Write/Erase Cycles	80 MHz	6 mm		SPI		536870912 bit	2.7 V					NOR TYPE	.0003 Amp	8 mm			3
S25FL512SDSBHEC13	Infineon Technologies	FLASH	MILITARY	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	SERIAL	SYNCHRONOUS		100 mA	67108864 words	3			8	GRID ARRAY, THIN PROFILE	BGA24,5X5,40			20	1 mm	125 Cel		3-STATE	64MX8	64M	-55 Cel					BOTTOM	HARDWARE/SOFTWARE	R-PBGA-B24		3.6 V	1.2 mm	100000 Write/Erase Cycles	80 MHz	6 mm		SPI		536870912 bit	2.7 V					NOR TYPE	.0003 Amp	8 mm			3
AM29DL640G120WHEN	Infineon Technologies	FLASH	MILITARY	63	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL		8K,64K	45 mA	4194304 words		YES	3/3.3	16	GRID ARRAY, FINE PITCH	BGA63,8X12,32	8	Flash Memories		.8 mm	125 Cel			4MX16	4M	-55 Cel	16,126	YES	TIN LEAD	YES	BOTTOM		R-PBGA-B63	3						Not Qualified		BOTTOM/TOP	67108864 bit			e0		260	NOR TYPE	.000005 Amp		YES	120 ns		YES
S25FL512SDSBAEC13	Infineon Technologies	FLASH	MILITARY	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	SERIAL	SYNCHRONOUS		100 mA	67108864 words	3			8	GRID ARRAY, THIN PROFILE	BGA24,5X5,40			20	1 mm	125 Cel		3-STATE	64MX8	64M	-55 Cel					BOTTOM	HARDWARE/SOFTWARE	R-PBGA-B24		3.6 V	1.2 mm	100000 Write/Erase Cycles	80 MHz	6 mm		SPI		536870912 bit	2.7 V					NOR TYPE	.0003 Amp	8 mm			3
S25FL512SAGBAE210	Infineon Technologies	FLASH	MILITARY	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	SERIAL	SYNCHRONOUS		100 mA	67108864 words	3			8	GRID ARRAY, THIN PROFILE	BGA24,5X5,40			20	1 mm	125 Cel		3-STATE	64MX8	64M	-55 Cel					BOTTOM	HARDWARE/SOFTWARE	R-PBGA-B24		3.6 V	1.2 mm	100000 Write/Erase Cycles	133 MHz	6 mm		SPI		536870912 bit	2.7 V					NOR TYPE	.0003 Amp	8 mm			3
AM29F002NBT-90JK	Infineon Technologies	FLASH	MILITARY	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	40 mA	262144 words	5	YES	5	8	CHIP CARRIER	LDCC32,.5X.6		Flash Memories	10	1.27 mm	125 Cel		3-STATE	256KX8	256K	-55 Cel	1,2,1,3	YES	MATTE TIN	YES	QUAD		R-PQCC-J32	3	5.5 V	3.556 mm	1000000 Write/Erase Cycles		11.43 mm	Not Qualified		TOP	2097152 bit	4.5 V		e3	40	260	NOR TYPE	.000005 Amp	13.97 mm		90 ns	5	YES
AM29LV160BB-80SK	Infineon Technologies	FLASH	MILITARY	44	SOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	PARALLEL		16K,8K,32K,64K	30 mA	1048576 words		YES	3/3.3	16	SMALL OUTLINE	SOP44,.63	8	Flash Memories		1.27 mm	125 Cel			1MX16	1M	-55 Cel	1,2,1,31	YES			DUAL		R-PDSO-G44							Not Qualified		BOTTOM	16777216 bit						NOR TYPE	.000005 Amp		YES	80 ns		YES
AM29LV160BT-90WCK	Infineon Technologies	FLASH	MILITARY	48	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL		16K,8K,32K,64K	30 mA	1048576 words		YES	3/3.3	16	GRID ARRAY, FINE PITCH	BGA48,6X8,32	8	Flash Memories		.8 mm	125 Cel			1MX16	1M	-55 Cel	1,2,1,31	YES		YES	BOTTOM		R-PBGA-B48							Not Qualified		TOP	16777216 bit						NOR TYPE	.000005 Amp		YES	90 ns		YES
S25FL512SDSBHEA13	Infineon Technologies	FLASH	MILITARY	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	SERIAL	SYNCHRONOUS		100 mA	67108864 words	3			8	GRID ARRAY, THIN PROFILE	BGA24,5X5,40			20	1 mm	125 Cel		3-STATE	64MX8	64M	-55 Cel					BOTTOM	HARDWARE/SOFTWARE	R-PBGA-B24		3.6 V	1.2 mm	100000 Write/Erase Cycles	80 MHz	6 mm		SPI		536870912 bit	2.7 V					NOR TYPE	.0003 Amp	8 mm			3
AM29F002BT-90EE	Infineon Technologies	FLASH	MILITARY	32	TSOP1	RECTANGULAR	UNSPECIFIED	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	40 mA	262144 words	5	YES		8	SMALL OUTLINE, THIN PROFILE	TSSOP32,.8,20			10	.5 mm	125 Cel		3-STATE	256KX8	256K	-55 Cel	1,2,1,3	YES		YES	DUAL		R-XDSO-G32		5.5 V	1.2 mm	1000000 Write/Erase Cycles		8 mm			TOP	2097152 bit	4.5 V					NOR TYPE	.000005 Amp	18.4 mm		90 ns	5	YES
AM29F002BB-90JE	Infineon Technologies	FLASH	MILITARY	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	40 mA	262144 words	5	YES		8	CHIP CARRIER	LDCC32,.5X.6			10	1.27 mm	125 Cel		3-STATE	256KX8	256K	-55 Cel	1,2,1,3	YES		YES	QUAD		R-PQCC-J32		5.5 V	3.556 mm	1000000 Write/Erase Cycles		11.43 mm			BOTTOM	2097152 bit	4.5 V					NOR TYPE	.000005 Amp	13.97 mm		90 ns	5	YES
S25FL512SDSBAE213	Infineon Technologies	FLASH	MILITARY	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	SERIAL	SYNCHRONOUS		100 mA	67108864 words	3			8	GRID ARRAY, THIN PROFILE	BGA24,5X5,40			20	1 mm	125 Cel		3-STATE	64MX8	64M	-55 Cel					BOTTOM	HARDWARE/SOFTWARE	R-PBGA-B24		3.6 V	1.2 mm	100000 Write/Erase Cycles	80 MHz	6 mm		SPI		536870912 bit	2.7 V					NOR TYPE	.0003 Amp	8 mm			3
AM29LV160BB-80EK	Infineon Technologies	FLASH	MILITARY	48	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	PARALLEL		16K,8K,32K,64K	30 mA	1048576 words		YES	3/3.3	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP48,.8,20	8	Flash Memories		.5 mm	125 Cel			1MX16	1M	-55 Cel	1,2,1,31	YES		YES	DUAL		R-PDSO-G48							Not Qualified		BOTTOM	16777216 bit						NOR TYPE	.000005 Amp		YES	80 ns		YES
S25FL512SDSBHEC10	Infineon Technologies	FLASH	MILITARY	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	SERIAL	SYNCHRONOUS		100 mA	67108864 words	3			8	GRID ARRAY, THIN PROFILE	BGA24,5X5,40			20	1 mm	125 Cel		3-STATE	64MX8	64M	-55 Cel					BOTTOM	HARDWARE/SOFTWARE	R-PBGA-B24		3.6 V	1.2 mm	100000 Write/Erase Cycles	80 MHz	6 mm		SPI		536870912 bit	2.7 V					NOR TYPE	.0003 Amp	8 mm			3
AM29F002NBT-90EE	Infineon Technologies	FLASH	MILITARY	32	TSOP1	RECTANGULAR	UNSPECIFIED	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	40 mA	262144 words	5	YES		8	SMALL OUTLINE, THIN PROFILE	TSSOP32,.8,20			10	.5 mm	125 Cel		3-STATE	256KX8	256K	-55 Cel	1,2,1,3	YES		YES	DUAL		R-XDSO-G32		5.5 V	1.2 mm	1000000 Write/Erase Cycles		8 mm			TOP	2097152 bit	4.5 V					NOR TYPE	.000005 Amp	18.4 mm		90 ns	5	YES
AM29LV160BT-80EK	Infineon Technologies	FLASH	MILITARY	48	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	PARALLEL		16K,8K,32K,64K	30 mA	1048576 words		YES	3/3.3	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP48,.8,20	8	Flash Memories		.5 mm	125 Cel			1MX16	1M	-55 Cel	1,2,1,31	YES		YES	DUAL		R-PDSO-G48							Not Qualified		TOP	16777216 bit						NOR TYPE	.000005 Amp		YES	80 ns		YES
S25FL512SDSBHE213	Infineon Technologies	FLASH	MILITARY	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	SERIAL	SYNCHRONOUS		100 mA	67108864 words	3			8	GRID ARRAY, THIN PROFILE	BGA24,5X5,40			20	1 mm	125 Cel		3-STATE	64MX8	64M	-55 Cel					BOTTOM	HARDWARE/SOFTWARE	R-PBGA-B24		3.6 V	1.2 mm	100000 Write/Erase Cycles	80 MHz	6 mm		SPI		536870912 bit	2.7 V					NOR TYPE	.0003 Amp	8 mm			3
S25FL512SAGBHEA13	Infineon Technologies	FLASH	MILITARY	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	SERIAL	SYNCHRONOUS		100 mA	67108864 words	3			8	GRID ARRAY, THIN PROFILE	BGA24,5X5,40			20	1 mm	125 Cel		3-STATE	64MX8	64M	-55 Cel			TIN SILVER COPPER		BOTTOM	HARDWARE/SOFTWARE	R-PBGA-B24	3	3.6 V	1.2 mm	100000 Write/Erase Cycles	133 MHz	6 mm		SPI		536870912 bit	2.7 V		e1			NOR TYPE	.0003 Amp	8 mm			3
AM29LV640DU120RPCEN	Infineon Technologies	FLASH	MILITARY	64	BGA	SQUARE	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL		32K	30 mA	4194304 words		YES	3.3,3/5	16	GRID ARRAY	BGA64,8X8,40		Flash Memories		1 mm	125 Cel			4MX16	4M	-55 Cel	128	YES		YES	BOTTOM		S-PBGA-B64							Not Qualified			67108864 bit						NOR TYPE	.000005 Amp		YES	120 ns		YES
S25FL512SAGBAEC13	Infineon Technologies	FLASH	MILITARY	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	SERIAL	SYNCHRONOUS		100 mA	67108864 words	3			8	GRID ARRAY, THIN PROFILE	BGA24,5X5,40			20	1 mm	125 Cel		3-STATE	64MX8	64M	-55 Cel			TIN LEAD		BOTTOM	HARDWARE/SOFTWARE	R-PBGA-B24	3	3.6 V	1.2 mm	100000 Write/Erase Cycles	133 MHz	6 mm		SPI		536870912 bit	2.7 V		e0			NOR TYPE	.0003 Amp	8 mm			3
AM29F002NBB-90EE	Infineon Technologies	FLASH	MILITARY	32	TSOP1	RECTANGULAR	UNSPECIFIED	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	40 mA	262144 words	5	YES		8	SMALL OUTLINE, THIN PROFILE	TSSOP32,.8,20			10	.5 mm	125 Cel		3-STATE	256KX8	256K	-55 Cel	1,2,1,3	YES		YES	DUAL		R-XDSO-G32		5.5 V	1.2 mm	1000000 Write/Erase Cycles		8 mm			BOTTOM	2097152 bit	4.5 V					NOR TYPE	.000005 Amp	18.4 mm		90 ns	5	YES
AM29LV081-120FEB	Infineon Technologies	FLASH	MILITARY	40	TSOP1-R	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	64K	30 mA	1048576 words	3.3	YES	3/3.3	8	SMALL OUTLINE, THIN PROFILE	TSSOP40,.8,20		Flash Memories		.5 mm	125 Cel	YES	3-STATE	1MX8	1M	-55 Cel	16	YES	TIN LEAD	YES	DUAL		R-PDSO-G40		3.6 V	1.2 mm			10 mm	Not Qualified			8388608 bit	2.7 V		e0			NOR TYPE	.000005 Amp	18.4 mm		120 ns	3	YES
AM29DL400BT-120SK	Infineon Technologies	FLASH	MILITARY	44	SOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	PARALLEL		16K,8K,32K,64K	45 mA	262144 words		YES	3/3.3	16	SMALL OUTLINE	SOP44,.63	8	Flash Memories		1.27 mm	125 Cel			256KX16	256K	-55 Cel	2,4,2,6	YES		YES	DUAL		R-PDSO-G44							Not Qualified		TOP	4194304 bit						NOR TYPE	.000005 Amp			120 ns		YES
AM29F080B-90EE	Infineon Technologies	FLASH	MILITARY	40	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	64K	40 mA	1048576 words	5	YES		8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP40,.8,20			10	.5 mm	125 Cel		3-STATE	1MX8	1M	-55 Cel	16	YES		YES	DUAL		R-XDSO-G40		5.5 V	1.2 mm	1000000 Write/Erase Cycles		10 mm				8388608 bit	4.5 V	DATA RETENTION TIME @ 150 DEGREE CENTIGRADE		NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.000005 Amp	18.4 mm		90 ns	5	YES
S25FL512SAGBAEA10	Infineon Technologies	FLASH	MILITARY	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	SERIAL	SYNCHRONOUS		100 mA	67108864 words	3			8	GRID ARRAY, THIN PROFILE	BGA24,5X5,40			20	1 mm	125 Cel		3-STATE	64MX8	64M	-55 Cel			TIN LEAD		BOTTOM	HARDWARE/SOFTWARE	R-PBGA-B24	3	3.6 V	1.2 mm	100000 Write/Erase Cycles	133 MHz	6 mm		SPI		536870912 bit	2.7 V		e0		220	NOR TYPE	.0003 Amp	8 mm			3
S25FL512SDSBAEC10	Infineon Technologies	FLASH	MILITARY	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	SERIAL	SYNCHRONOUS		100 mA	67108864 words	3			8	GRID ARRAY, THIN PROFILE	BGA24,5X5,40			20	1 mm	125 Cel		3-STATE	64MX8	64M	-55 Cel					BOTTOM	HARDWARE/SOFTWARE	R-PBGA-B24		3.6 V	1.2 mm	100000 Write/Erase Cycles	80 MHz	6 mm		SPI		536870912 bit	2.7 V					NOR TYPE	.0003 Amp	8 mm			3
AM29F002BT-90JE	Infineon Technologies	FLASH	MILITARY	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	40 mA	262144 words	5	YES		8	CHIP CARRIER	LDCC32,.5X.6			10	1.27 mm	125 Cel		3-STATE	256KX8	256K	-55 Cel	1,2,1,3	YES		YES	QUAD		R-PQCC-J32		5.5 V	3.556 mm	1000000 Write/Erase Cycles		11.43 mm			TOP	2097152 bit	4.5 V					NOR TYPE	.000005 Amp	13.97 mm		90 ns	5	YES
AM29LV160BT-90SK	Infineon Technologies	FLASH	MILITARY	44	SOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	PARALLEL		16K,8K,32K,64K	30 mA	1048576 words		YES	3/3.3	16	SMALL OUTLINE	SOP44,.63	8	Flash Memories		1.27 mm	125 Cel			1MX16	1M	-55 Cel	1,2,1,31	YES			DUAL		R-PDSO-G44							Not Qualified		TOP	16777216 bit						NOR TYPE	.000005 Amp		YES	90 ns		YES
S25FL512SAGBHEA10	Infineon Technologies	FLASH	MILITARY	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	SERIAL	SYNCHRONOUS		100 mA	67108864 words	3			8	GRID ARRAY, THIN PROFILE	BGA24,5X5,40			20	1 mm	125 Cel		3-STATE	64MX8	64M	-55 Cel			TIN SILVER COPPER		BOTTOM	HARDWARE/SOFTWARE	R-PBGA-B24	3	3.6 V	1.2 mm	100000 Write/Erase Cycles	133 MHz	6 mm		SPI		536870912 bit	2.7 V		e1		260	NOR TYPE	.0003 Amp	8 mm			3
S25FL512SDSBAE210	Infineon Technologies	FLASH	MILITARY	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	SERIAL	SYNCHRONOUS		100 mA	67108864 words	3			8	GRID ARRAY, THIN PROFILE	BGA24,5X5,40			20	1 mm	125 Cel		3-STATE	64MX8	64M	-55 Cel					BOTTOM	HARDWARE/SOFTWARE	R-PBGA-B24		3.6 V	1.2 mm	100000 Write/Erase Cycles	80 MHz	6 mm		SPI		536870912 bit	2.7 V					NOR TYPE	.0003 Amp	8 mm			3
S25FL512SAGBHE210	Infineon Technologies	FLASH	MILITARY	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	SERIAL	SYNCHRONOUS		100 mA	67108864 words	3			8	GRID ARRAY, THIN PROFILE	BGA24,5X5,40			20	1 mm	125 Cel		3-STATE	64MX8	64M	-55 Cel					BOTTOM	HARDWARE/SOFTWARE	R-PBGA-B24		3.6 V	1.2 mm	100000 Write/Erase Cycles	133 MHz	6 mm		SPI		536870912 bit	2.7 V					NOR TYPE	.0003 Amp	8 mm			3
S25FL128SAGBAEA00	Infineon Technologies	FLASH	MILITARY	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	SERIAL	SYNCHRONOUS		100 mA	16777216 words	3			8	GRID ARRAY, THIN PROFILE	BGA24,5X5,40	4		20	1 mm	125 Cel		3-STATE	16MX8	16M	-55 Cel			TIN LEAD		BOTTOM	HARDWARE/SOFTWARE	R-PBGA-B24	3	3.6 V	1.2 mm	100 Write/Erase Cycles	133 MHz	6 mm		SPI		134217728 bit	2.7 V		e0			NOR TYPE	.0003 Amp	8 mm			3

Flash Memory

Flash memory is a type of non-volatile computer memory that is commonly used in digital devices such as USB drives, solid-state drives, and digital cameras. It is a type of EEPROM (Electrically Erasable Programmable Read-Only Memory) that allows data to be erased and reprogrammed in blocks instead of one byte at a time. Flash memory uses a floating gate transistor to store data, which allows it to retain information even when the power is turned off.

Flash memory is widely used in digital devices because of its high capacity, small size, and fast access times. It is also more durable than other types of memory, such as hard disk drives, because it has no moving parts. This makes it ideal for use in portable devices that may be subject to physical shock or vibration.

There are two types of flash memory: NOR flash and NAND flash. NOR flash is faster than NAND flash, but it has lower density and higher cost per bit. NOR flash is typically used for code storage, such as firmware or boot code, because it provides faster access times. NAND flash has higher density and lower cost per bit, which makes it ideal for data storage applications.

Flash memory has a limited lifespan, as it can only be erased and reprogrammed a limited number of times. This is because the process of erasing and reprogramming the memory causes wear and tear on the floating gate transistor. However, modern flash memory devices have a sophisticated wear-leveling algorithm that distributes writes evenly across the memory, which extends the lifespan of the device.