MILITARY Flash Memory 134

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Screening Level	Terminal Form	Parallel or Serial	Operating Mode	Sector Size (Words)	Maximum Supply Current	No. of Words	Nominal Supply Voltage / Vsup (V)	Toggle Bit	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Alternate Memory Width	Sub-Category	Minimum Data Retention Time	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	No. of Sectors/Size	Command User Interface	Terminal Finish	Ready or Busy	Terminal Position	Write Protection	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Endurance	Maximum Clock Frequency (fCLK)	Width	Qualification	Maximum Write Cycle Time (tWC)	Serial Bus Type	Boot Block	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	Page Size (words)	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Type	Maximum Standby Current	Length	Common Flash Interface	Maximum Access Time	Programming Voltage (V)	Data Polling
5962-9089903QXA	Texas Instruments	FLASH	MILITARY	32	DIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS			131072 words	5			8	IN-LINE						125 Cel		128KX8	128K	-55 Cel			TIN LEAD		DUAL		R-GDIP-T32		5.5 V					Not Qualified				1048576 bit	4.5 V			e0							150 ns	12
5962-9089903QXX	Texas Instruments	FLASH	MILITARY	32	DIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS	MIL-PRF-38535 Class Q	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS			131072 words	5			8	IN-LINE						125 Cel		128KX8	128K	-55 Cel			TIN LEAD		DUAL		R-GDIP-T32		5.5 V					Not Qualified				1048576 bit	4.5 V			e0							150 ns	12
5962-9089912QXA	Texas Instruments	FLASH	MILITARY	32	DIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS			131072 words	5			8	IN-LINE						125 Cel		128KX8	128K	-55 Cel			TIN LEAD		DUAL		R-GDIP-T32		5.5 V					Not Qualified				1048576 bit	4.5 V			e0							150 ns	12
5962-9089913QXA	Texas Instruments	FLASH	MILITARY	32	DIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS			131072 words	5			8	IN-LINE						125 Cel		128KX8	128K	-55 Cel			TIN LEAD		DUAL		R-GDIP-T32		5.5 V					Not Qualified				1048576 bit	4.5 V			e0							120 ns	12
5962-9089907QXX	Texas Instruments	FLASH	MILITARY	32	DIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS	MIL-PRF-38535 Class Q	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS			131072 words	5			8	IN-LINE						125 Cel		128KX8	128K	-55 Cel			TIN LEAD		DUAL		R-GDIP-T32		5.5 V					Not Qualified				1048576 bit	4.5 V			e0							150 ns	12
5962-9089913QYX	Texas Instruments	FLASH	MILITARY	32	QCCN	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	YES	1	CMOS	MIL-PRF-38535 Class Q	NO LEAD	PARALLEL	ASYNCHRONOUS			131072 words	5			8	CHIP CARRIER						125 Cel		128KX8	128K	-55 Cel			TIN LEAD		QUAD		R-CQCC-N32		5.5 V					Not Qualified				1048576 bit	4.5 V			e0							120 ns	12
SM28VLT32SKGD3	Texas Instruments	FLASH	MILITARY	150	DIE	RECTANGULAR	UNSPECIFIED	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS		160 mA	2097152 words	1.9	YES		16	UNCASED CHIP						210 Cel		2MX16	2M	-55 Cel					UPPER	HARDWARE	R-XUUC-N150		3.6 V		1000 Write/Erase Cycles	1 MHz	4.6 mm			SPI		33554432 bit	3.1 V				NOT SPECIFIED	NOT SPECIFIED			11.509 mm			1.8	YES
S29GL128S13FAEV10	Infineon Technologies	FLASH	MILITARY	64	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	64K	60 mA	8388608 words	3	YES		16	GRID ARRAY, LOW PROFILE	BGA64,8X8,40			20	1 mm	125 Cel	3-STATE	8MX16	8M	-55 Cel	128	YES		YES	BOTTOM		R-PBGA-B64	3	3.6 V	1.4 mm	100 Write/Erase Cycles		11 mm		.00006 ms			134217728 bit	2.7 V		16			260	NOR TYPE	.0002 Amp	13 mm	YES	130 ns	3	YES
CYRS16B256-133FZMB	Infineon Technologies	FLASH	MILITARY	32	DFP	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	YES	1	CMOS		FLAT	SERIAL	SYNCHRONOUS		70 mA	33554432 words	3			8	FLATPACK	FL32,.5	4		100	1.27 mm	125 Cel	3-STATE	32MX8	32M	-55 Cel			NICKEL GOLD		DUAL	HARDWARE/SOFTWARE	R-CDFP-F32	1	3.6 V	2.95 mm	1000 Write/Erase Cycles	133 MHz	12.95 mm			SPI		268435456 bit	2.7 V	ALSO ORGANISED AS 128MbX2 AND 256Mbx1		e4			NOR TYPE	.0002 Amp	23.37 mm			3
S29GL512S12DHE010	Infineon Technologies	FLASH	MILITARY	64	LBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	64K	60 mA	33554432 words	3	YES		16	GRID ARRAY, LOW PROFILE	BGA64,8X8,40			20	1 mm	125 Cel	3-STATE	32MX16	32M	-55 Cel	512	YES		YES	BOTTOM		S-PBGA-B64	3	3.6 V	1.4 mm	100 Write/Erase Cycles		9 mm		.00006 ms			536870912 bit	2.7 V		16			260	NOR TYPE	.0002 Amp	9 mm	YES	120 ns	3	YES
AM29F002NBB-90JE	Infineon Technologies	FLASH	MILITARY	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	40 mA	262144 words	5	YES		8	CHIP CARRIER	LDCC32,.5X.6			10	1.27 mm	125 Cel	3-STATE	256KX8	256K	-55 Cel	1,2,1,3	YES		YES	QUAD		R-PQCC-J32		5.5 V	3.556 mm	1000000 Write/Erase Cycles		11.43 mm				BOTTOM	2097152 bit	4.5 V						NOR TYPE	.000005 Amp	13.97 mm		90 ns	5	YES
AM29F002NBB-90JK	Infineon Technologies	FLASH	MILITARY	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	40 mA	262144 words	5	YES		8	CHIP CARRIER	LDCC32,.5X.6			10	1.27 mm	125 Cel	3-STATE	256KX8	256K	-55 Cel	1,2,1,3	YES		YES	QUAD		R-PQCC-J32		5.5 V	3.556 mm	1000000 Write/Erase Cycles		11.43 mm				BOTTOM	2097152 bit	4.5 V						NOR TYPE	.000005 Amp	13.97 mm		90 ns	5	YES
AM29DL640G120PCEN	Infineon Technologies	FLASH	MILITARY	64	BGA	SQUARE	PLASTIC/EPOXY	YES		CMOS		BALL	PARALLEL		8K,64K	45 mA	4194304 words		YES	3/3.3	16	GRID ARRAY	BGA64,8X8,40	8	Flash Memories		1 mm	125 Cel		4MX16	4M	-55 Cel	16,126	YES	TIN LEAD	YES	BOTTOM		S-PBGA-B64	3						Not Qualified			BOTTOM/TOP	67108864 bit				e0		260	NOR TYPE	.000005 Amp		YES	120 ns		YES
AM29LV160BT-120EK	Infineon Technologies	FLASH	MILITARY	48	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		GULL WING	PARALLEL		16K,8K,32K,64K	30 mA	1048576 words		YES	3/3.3	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP48,.8,20	8	Flash Memories		.5 mm	125 Cel		1MX16	1M	-55 Cel	1,2,1,31	YES		YES	DUAL		R-PDSO-G48							Not Qualified			TOP	16777216 bit							NOR TYPE	.000005 Amp		YES	120 ns		YES
S25FL512SAGBHEC13	Infineon Technologies	FLASH	MILITARY	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS		100 mA	67108864 words	3			8	GRID ARRAY, THIN PROFILE	BGA24,5X5,40			20	1 mm	125 Cel	3-STATE	64MX8	64M	-55 Cel			TIN SILVER COPPER		BOTTOM	HARDWARE/SOFTWARE	R-PBGA-B24	3	3.6 V	1.2 mm	100000 Write/Erase Cycles	133 MHz	6 mm			SPI		536870912 bit	2.7 V			e1			NOR TYPE	.0003 Amp	8 mm			3
AM29LV160BT-80WCK	Infineon Technologies	FLASH	MILITARY	48	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		BALL	PARALLEL		16K,8K,32K,64K	30 mA	1048576 words		YES	3/3.3	16	GRID ARRAY, FINE PITCH	BGA48,6X8,32	8	Flash Memories		.8 mm	125 Cel		1MX16	1M	-55 Cel	1,2,1,31	YES		YES	BOTTOM		R-PBGA-B48							Not Qualified			TOP	16777216 bit							NOR TYPE	.000005 Amp		YES	80 ns		YES
AM29DL400BB-90EK	Infineon Technologies	FLASH	MILITARY	48	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		GULL WING	PARALLEL		16K,8K,32K,64K	45 mA	262144 words	3	YES	3/3.3	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP48,.8,20	8	Flash Memories	10	.5 mm	125 Cel		256KX16	256K	-55 Cel	2,4,2,6	YES		YES	DUAL		R-PDSO-G48		3.6 V	1.2 mm	1000000 Write/Erase Cycles		12 mm	Not Qualified			BOTTOM	4194304 bit	2.7 V						NOR TYPE	.000005 Amp	18.4 mm		90 ns		YES
AM29F002BB-90EE	Infineon Technologies	FLASH	MILITARY	32	TSOP1	RECTANGULAR	UNSPECIFIED	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	40 mA	262144 words	5	YES		8	SMALL OUTLINE, THIN PROFILE	TSSOP32,.8,20			10	.5 mm	125 Cel	3-STATE	256KX8	256K	-55 Cel	1,2,1,3	YES		YES	DUAL		R-XDSO-G32		5.5 V	1.2 mm	1000000 Write/Erase Cycles		8 mm				BOTTOM	2097152 bit	4.5 V						NOR TYPE	.000005 Amp	18.4 mm		90 ns	5	YES
AM29F002NBT-90JE	Infineon Technologies	FLASH	MILITARY	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	40 mA	262144 words	5	YES		8	CHIP CARRIER	LDCC32,.5X.6			10	1.27 mm	125 Cel	3-STATE	256KX8	256K	-55 Cel	1,2,1,3	YES		YES	QUAD		R-PQCC-J32		5.5 V	3.556 mm	1000000 Write/Erase Cycles		11.43 mm				TOP	2097152 bit	4.5 V						NOR TYPE	.000005 Amp	13.97 mm		90 ns	5	YES
AM29LV081-120EEB	Infineon Technologies	FLASH	MILITARY	40	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	64K	30 mA	1048576 words	3.3	YES	3/3.3	8	SMALL OUTLINE, THIN PROFILE	TSSOP40,.8,20		Flash Memories		.5 mm	125 Cel	3-STATE	1MX8	1M	-55 Cel	16	YES	TIN LEAD	YES	DUAL		R-PDSO-G40		3.6 V	1.2 mm			10 mm	Not Qualified				8388608 bit	2.7 V			e0			NOR TYPE	.000005 Amp	18.4 mm		120 ns	3	YES
AM29LV160BB-90SK	Infineon Technologies	FLASH	MILITARY	44	SOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		GULL WING	PARALLEL		16K,8K,32K,64K	30 mA	1048576 words		YES	3/3.3	16	SMALL OUTLINE	SOP44,.63	8	Flash Memories		1.27 mm	125 Cel		1MX16	1M	-55 Cel	1,2,1,31	YES			DUAL		R-PDSO-G44							Not Qualified			BOTTOM	16777216 bit							NOR TYPE	.000005 Amp		YES	90 ns		YES
AM29DL640G120EEN	Infineon Technologies	FLASH	MILITARY	48	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		GULL WING	PARALLEL		8K,64K	45 mA	4194304 words		YES	3/3.3	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP48,.8,20	8	Flash Memories		.5 mm	125 Cel		4MX16	4M	-55 Cel	16,126	YES	TIN LEAD	YES	DUAL		R-PDSO-G48	3						Not Qualified			BOTTOM/TOP	67108864 bit				e0		260	NOR TYPE	.000005 Amp		YES	120 ns		YES
AM29DL400BB-90SK	Infineon Technologies	FLASH	MILITARY	44	SOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		GULL WING	PARALLEL		16K,8K,32K,64K	45 mA	262144 words		YES	3/3.3	16	SMALL OUTLINE	SOP44,.63	8	Flash Memories		1.27 mm	125 Cel		256KX16	256K	-55 Cel	2,4,2,6	YES		YES	DUAL		R-PDSO-G44							Not Qualified			BOTTOM	4194304 bit							NOR TYPE	.000005 Amp			90 ns		YES
AM29LV160BT-80SK	Infineon Technologies	FLASH	MILITARY	44	SOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		GULL WING	PARALLEL		16K,8K,32K,64K	30 mA	1048576 words		YES	3/3.3	16	SMALL OUTLINE	SOP44,.63	8	Flash Memories		1.27 mm	125 Cel		1MX16	1M	-55 Cel	1,2,1,31	YES			DUAL		R-PDSO-G44							Not Qualified			TOP	16777216 bit							NOR TYPE	.000005 Amp		YES	80 ns		YES
AM29LV160BT-90EK	Infineon Technologies	FLASH	MILITARY	48	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		GULL WING	PARALLEL		16K,8K,32K,64K	30 mA	1048576 words		YES	3/3.3	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP48,.8,20	8	Flash Memories		.5 mm	125 Cel		1MX16	1M	-55 Cel	1,2,1,31	YES		YES	DUAL		R-PDSO-G48							Not Qualified			TOP	16777216 bit							NOR TYPE	.000005 Amp		YES	90 ns		YES
AM29LV160BB-80WCK	Infineon Technologies	FLASH	MILITARY	48	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		BALL	PARALLEL		16K,8K,32K,64K	30 mA	1048576 words		YES	3/3.3	16	GRID ARRAY, FINE PITCH	BGA48,6X8,32	8	Flash Memories		.8 mm	125 Cel		1MX16	1M	-55 Cel	1,2,1,31	YES		YES	BOTTOM		R-PBGA-B48							Not Qualified			BOTTOM	16777216 bit							NOR TYPE	.000005 Amp		YES	80 ns		YES
AM29F002BB-90JK	Infineon Technologies	FLASH	MILITARY	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	40 mA	262144 words	5	YES		8	CHIP CARRIER	LDCC32,.5X.6			10	1.27 mm	125 Cel	3-STATE	256KX8	256K	-55 Cel	1,2,1,3	YES		YES	QUAD		R-PQCC-J32		5.5 V	3.556 mm	1000000 Write/Erase Cycles		11.43 mm				BOTTOM	2097152 bit	4.5 V						NOR TYPE	.000005 Amp	13.97 mm		90 ns	5	YES
S25FL512SAGBHE213	Infineon Technologies	FLASH	MILITARY	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS		100 mA	67108864 words	3			8	GRID ARRAY, THIN PROFILE	BGA24,5X5,40			20	1 mm	125 Cel	3-STATE	64MX8	64M	-55 Cel					BOTTOM	HARDWARE/SOFTWARE	R-PBGA-B24		3.6 V	1.2 mm	100000 Write/Erase Cycles	133 MHz	6 mm			SPI		536870912 bit	2.7 V						NOR TYPE	.0003 Amp	8 mm			3
AM29LV160BB-90EK	Infineon Technologies	FLASH	MILITARY	48	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		GULL WING	PARALLEL		16K,8K,32K,64K	30 mA	1048576 words		YES	3/3.3	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP48,.8,20	8	Flash Memories		.5 mm	125 Cel		1MX16	1M	-55 Cel	1,2,1,31	YES		YES	DUAL		R-PDSO-G48							Not Qualified			BOTTOM	16777216 bit							NOR TYPE	.000005 Amp		YES	90 ns		YES
AM29LV160BB-120WCK	Infineon Technologies	FLASH	MILITARY	48	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		BALL	PARALLEL		16K,8K,32K,64K	30 mA	1048576 words		YES	3/3.3	16	GRID ARRAY, FINE PITCH	BGA48,6X8,32	8	Flash Memories		.8 mm	125 Cel		1MX16	1M	-55 Cel	1,2,1,31	YES		YES	BOTTOM		R-PBGA-B48							Not Qualified			BOTTOM	16777216 bit							NOR TYPE	.000005 Amp		YES	120 ns		YES
AM29LV160BT-120SK	Infineon Technologies	FLASH	MILITARY	44	SOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		GULL WING	PARALLEL		16K,8K,32K,64K	30 mA	1048576 words		YES	3/3.3	16	SMALL OUTLINE	SOP44,.63	8	Flash Memories		1.27 mm	125 Cel		1MX16	1M	-55 Cel	1,2,1,31	YES			DUAL		R-PDSO-G44							Not Qualified			TOP	16777216 bit							NOR TYPE	.000005 Amp		YES	120 ns		YES
AM29LV160BB-120EK	Infineon Technologies	FLASH	MILITARY	48	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		GULL WING	PARALLEL		16K,8K,32K,64K	30 mA	1048576 words		YES	3/3.3	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP48,.8,20	8	Flash Memories		.5 mm	125 Cel		1MX16	1M	-55 Cel	1,2,1,31	YES		YES	DUAL		R-PDSO-G48							Not Qualified			BOTTOM	16777216 bit							NOR TYPE	.000005 Amp		YES	120 ns		YES
AM29LV081-150EEB	Infineon Technologies	FLASH	MILITARY	40	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	64K	30 mA	1048576 words	3.3	YES	3/3.3	8	SMALL OUTLINE, THIN PROFILE	TSSOP40,.8,20		Flash Memories		.5 mm	125 Cel	3-STATE	1MX8	1M	-55 Cel	16	YES	TIN LEAD	YES	DUAL		R-PDSO-G40		3.6 V	1.2 mm			10 mm	Not Qualified				8388608 bit	2.7 V			e0			NOR TYPE	.000005 Amp	18.4 mm		150 ns	3	YES
AM29DL400BT-120EK	Infineon Technologies	FLASH	MILITARY	48	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		GULL WING	PARALLEL		16K,8K,32K,64K	45 mA	262144 words		YES	3/3.3	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP48,.8,20	8	Flash Memories		.5 mm	125 Cel		256KX16	256K	-55 Cel	2,4,2,6	YES		YES	DUAL		R-PDSO-G48							Not Qualified			TOP	4194304 bit							NOR TYPE	.000005 Amp			120 ns		YES
AM29F080B-90EK	Infineon Technologies	FLASH	MILITARY	40	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	64K	40 mA	1048576 words	5	YES		8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP40,.8,20			10	.5 mm	125 Cel	3-STATE	1MX8	1M	-55 Cel	16	YES		YES	DUAL		R-XDSO-G40		5.5 V	1.2 mm	1000000 Write/Erase Cycles		10 mm					8388608 bit	4.5 V	DATA RETENTION TIME @ 150 DEGREE CENTIGRADE			NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.000005 Amp	18.4 mm		90 ns	5	YES
AM29LV160BT-120WCK	Infineon Technologies	FLASH	MILITARY	48	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		BALL	PARALLEL		16K,8K,32K,64K	30 mA	1048576 words		YES	3/3.3	16	GRID ARRAY, FINE PITCH	BGA48,6X8,32	8	Flash Memories		.8 mm	125 Cel		1MX16	1M	-55 Cel	1,2,1,31	YES		YES	BOTTOM		R-PBGA-B48							Not Qualified			TOP	16777216 bit							NOR TYPE	.000005 Amp		YES	120 ns		YES
AM29LV160BB-90WCK	Infineon Technologies	FLASH	MILITARY	48	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		BALL	PARALLEL		16K,8K,32K,64K	30 mA	1048576 words		YES	3/3.3	16	GRID ARRAY, FINE PITCH	BGA48,6X8,32	8	Flash Memories		.8 mm	125 Cel		1MX16	1M	-55 Cel	1,2,1,31	YES		YES	BOTTOM		R-PBGA-B48							Not Qualified			BOTTOM	16777216 bit							NOR TYPE	.000005 Amp		YES	90 ns		YES
AM29LV160BB-120SK	Infineon Technologies	FLASH	MILITARY	44	SOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		GULL WING	PARALLEL		16K,8K,32K,64K	30 mA	1048576 words		YES	3/3.3	16	SMALL OUTLINE	SOP44,.63	8	Flash Memories		1.27 mm	125 Cel		1MX16	1M	-55 Cel	1,2,1,31	YES			DUAL		R-PDSO-G44							Not Qualified			BOTTOM	16777216 bit							NOR TYPE	.000005 Amp		YES	120 ns		YES
S25FL512SDSBHEA10	Infineon Technologies	FLASH	MILITARY	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS		100 mA	67108864 words	3			8	GRID ARRAY, THIN PROFILE	BGA24,5X5,40			20	1 mm	125 Cel	3-STATE	64MX8	64M	-55 Cel					BOTTOM	HARDWARE/SOFTWARE	R-PBGA-B24		3.6 V	1.2 mm	100000 Write/Erase Cycles	80 MHz	6 mm			SPI		536870912 bit	2.7 V						NOR TYPE	.0003 Amp	8 mm			3
AM29F002BB-90EK	Infineon Technologies	FLASH	MILITARY	32	TSOP1	RECTANGULAR	UNSPECIFIED	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	40 mA	262144 words	5	YES		8	SMALL OUTLINE, THIN PROFILE	TSSOP32,.8,20			10	.5 mm	125 Cel	3-STATE	256KX8	256K	-55 Cel	1,2,1,3	YES		YES	DUAL		R-XDSO-G32		5.5 V	1.2 mm	1000000 Write/Erase Cycles		8 mm				BOTTOM	2097152 bit	4.5 V						NOR TYPE	.000005 Amp	18.4 mm		90 ns	5	YES
S25FL512SAGBAE213	Infineon Technologies	FLASH	MILITARY	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS		100 mA	67108864 words	3			8	GRID ARRAY, THIN PROFILE	BGA24,5X5,40			20	1 mm	125 Cel	3-STATE	64MX8	64M	-55 Cel					BOTTOM	HARDWARE/SOFTWARE	R-PBGA-B24		3.6 V	1.2 mm	100000 Write/Erase Cycles	133 MHz	6 mm			SPI		536870912 bit	2.7 V						NOR TYPE	.0003 Amp	8 mm			3
S25FL512SDSBHE210	Infineon Technologies	FLASH	MILITARY	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS		100 mA	67108864 words	3			8	GRID ARRAY, THIN PROFILE	BGA24,5X5,40			20	1 mm	125 Cel	3-STATE	64MX8	64M	-55 Cel					BOTTOM	HARDWARE/SOFTWARE	R-PBGA-B24		3.6 V	1.2 mm	100000 Write/Erase Cycles	80 MHz	6 mm			SPI		536870912 bit	2.7 V						NOR TYPE	.0003 Amp	8 mm			3
S25FL512SDSBHEC13	Infineon Technologies	FLASH	MILITARY	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS		100 mA	67108864 words	3			8	GRID ARRAY, THIN PROFILE	BGA24,5X5,40			20	1 mm	125 Cel	3-STATE	64MX8	64M	-55 Cel					BOTTOM	HARDWARE/SOFTWARE	R-PBGA-B24		3.6 V	1.2 mm	100000 Write/Erase Cycles	80 MHz	6 mm			SPI		536870912 bit	2.7 V						NOR TYPE	.0003 Amp	8 mm			3
AM29DL640G120WHEN	Infineon Technologies	FLASH	MILITARY	63	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		BALL	PARALLEL		8K,64K	45 mA	4194304 words		YES	3/3.3	16	GRID ARRAY, FINE PITCH	BGA63,8X12,32	8	Flash Memories		.8 mm	125 Cel		4MX16	4M	-55 Cel	16,126	YES	TIN LEAD	YES	BOTTOM		R-PBGA-B63	3						Not Qualified			BOTTOM/TOP	67108864 bit				e0		260	NOR TYPE	.000005 Amp		YES	120 ns		YES
S25FL512SDSBAEC13	Infineon Technologies	FLASH	MILITARY	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS		100 mA	67108864 words	3			8	GRID ARRAY, THIN PROFILE	BGA24,5X5,40			20	1 mm	125 Cel	3-STATE	64MX8	64M	-55 Cel					BOTTOM	HARDWARE/SOFTWARE	R-PBGA-B24		3.6 V	1.2 mm	100000 Write/Erase Cycles	80 MHz	6 mm			SPI		536870912 bit	2.7 V						NOR TYPE	.0003 Amp	8 mm			3
S25FL512SAGBAE210	Infineon Technologies	FLASH	MILITARY	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS		100 mA	67108864 words	3			8	GRID ARRAY, THIN PROFILE	BGA24,5X5,40			20	1 mm	125 Cel	3-STATE	64MX8	64M	-55 Cel					BOTTOM	HARDWARE/SOFTWARE	R-PBGA-B24		3.6 V	1.2 mm	100000 Write/Erase Cycles	133 MHz	6 mm			SPI		536870912 bit	2.7 V						NOR TYPE	.0003 Amp	8 mm			3
AM29F002NBT-90JK	Infineon Technologies	FLASH	MILITARY	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	40 mA	262144 words	5	YES	5	8	CHIP CARRIER	LDCC32,.5X.6		Flash Memories	10	1.27 mm	125 Cel	3-STATE	256KX8	256K	-55 Cel	1,2,1,3	YES	MATTE TIN	YES	QUAD		R-PQCC-J32	3	5.5 V	3.556 mm	1000000 Write/Erase Cycles		11.43 mm	Not Qualified			TOP	2097152 bit	4.5 V			e3	40	260	NOR TYPE	.000005 Amp	13.97 mm		90 ns	5	YES
AM29LV160BB-80SK	Infineon Technologies	FLASH	MILITARY	44	SOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		GULL WING	PARALLEL		16K,8K,32K,64K	30 mA	1048576 words		YES	3/3.3	16	SMALL OUTLINE	SOP44,.63	8	Flash Memories		1.27 mm	125 Cel		1MX16	1M	-55 Cel	1,2,1,31	YES			DUAL		R-PDSO-G44							Not Qualified			BOTTOM	16777216 bit							NOR TYPE	.000005 Amp		YES	80 ns		YES

Flash Memory

Flash memory is a type of non-volatile computer memory that is commonly used in digital devices such as USB drives, solid-state drives, and digital cameras. It is a type of EEPROM (Electrically Erasable Programmable Read-Only Memory) that allows data to be erased and reprogrammed in blocks instead of one byte at a time. Flash memory uses a floating gate transistor to store data, which allows it to retain information even when the power is turned off.

Flash memory is widely used in digital devices because of its high capacity, small size, and fast access times. It is also more durable than other types of memory, such as hard disk drives, because it has no moving parts. This makes it ideal for use in portable devices that may be subject to physical shock or vibration.

There are two types of flash memory: NOR flash and NAND flash. NOR flash is faster than NAND flash, but it has lower density and higher cost per bit. NOR flash is typically used for code storage, such as firmware or boot code, because it provides faster access times. NAND flash has higher density and lower cost per bit, which makes it ideal for data storage applications.

Flash memory has a limited lifespan, as it can only be erased and reprogrammed a limited number of times. This is because the process of erasing and reprogramming the memory causes wear and tear on the floating gate transistor. However, modern flash memory devices have a sophisticated wear-leveling algorithm that distributes writes evenly across the memory, which extends the lifespan of the device.