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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Terminal Form	Parallel or Serial	Operating Mode	Sector Size (Words)	Maximum Supply Current	No. of Words	Nominal Supply Voltage / Vsup (V)	Toggle Bit	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Minimum Data Retention Time	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	No. of Sectors/Size	Command User Interface	Terminal Finish	Ready or Busy	Terminal Position	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Endurance	Width	Qualification	Boot Block	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	Page Size (words)	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Type	Maximum Standby Current	Length	Common Flash Interface	Maximum Access Time	Programming Voltage (V)	Data Polling
S29XS256R0SBHW003	Infineon Technologies	FLASH	OTHER	44	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS/ASYNCHRONOUS	32K,128K	76 mA	33554432 words	1.8	NO		8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA44,8X14,20		10	.5 mm	85 Cel	3-STATE	32MX8	32M	-25 Cel	4,255	YES			BOTTOM	R-PBGA-B44		1.95 V	1 mm	100000 Write/Erase Cycles	6.2 mm	Not Qualified	TOP	268435456 bit	1.7 V	SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE			NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.00004 Amp	7.7 mm	YES	80 ns	1.8	NO
S29NS128N0LBFW000	Infineon Technologies	FLASH	OTHER	44	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL		16K,64K	60 mA	8388608 words	1.8	YES	1.8	16	GRID ARRAY, FINE PITCH	BGA44,8X14,20	Flash Memories		.5 mm	85 Cel		8MX16	8M	-25 Cel	4,127	YES	TIN SILVER COPPER NICKEL	YES	BOTTOM	R-PBGA-B44	3					Not Qualified	TOP	134217728 bit				e2	40	260	NOR TYPE	.00004 Amp		YES	80 ns		YES
S29GL128P10TACR10	Infineon Technologies	FLASH	OTHER	56	HTSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS			134217728 words	3.3			1	SMALL OUTLINE, HEAT SINK/SLUG, THIN PROFILE, SHRINK PITCH				.5 mm	85 Cel		128MX1	128M	0 Cel					DUAL	R-PDSO-G56		3.6 V	1.2 mm		14 mm	Not Qualified		134217728 bit	3 V						NOR TYPE		18.4 mm		100 ns	3
S29XS128RAABHW000	Infineon Technologies	FLASH	OTHER	44	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS/ASYNCHRONOUS	32K,128K	76 mA	16777216 words	1.8	NO		8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA44,8X14,20		10	.5 mm	85 Cel	3-STATE	16MX8	16M	-25 Cel	4,127	YES			BOTTOM	R-PBGA-B44		1.95 V	1 mm	100000 Write/Erase Cycles	6.2 mm	Not Qualified	TOP	134217728 bit	1.7 V				NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.00004 Amp	7.7 mm	YES	80 ns	1.8	NO
S29WS256R0PBHW002	Infineon Technologies	FLASH	OTHER	84	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS			33554432 words	1.8			16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH				.8 mm	85 Cel		32MX16	32M	-25 Cel					BOTTOM	R-PBGA-B84		1.95 V	1 mm		8 mm	Not Qualified		536870912 bit	1.7 V	SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE							11.6 mm		80 ns	1.8
S29WS512RAABHW003	Infineon Technologies	FLASH	OTHER	84	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS			33554432 words	1.8			16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH				.8 mm	85 Cel		32MX16	32M	-25 Cel					BOTTOM	R-PBGA-B84		1.95 V	1 mm		8 mm	Not Qualified		536870912 bit	1.7 V	SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE							11.6 mm		80 ns	1.8
S29WS512R0PBHW202	Infineon Technologies	FLASH	OTHER	84	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS			33554432 words	1.8			16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH				.8 mm	85 Cel		32MX16	32M	-25 Cel					BOTTOM	R-PBGA-B84		1.95 V	1 mm		8 mm	Not Qualified	TOP	536870912 bit	1.7 V	SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE, TOP BOOT BLOCK							11.6 mm		80 ns	1.8
S29WS128R0PBHW002	Infineon Technologies	FLASH	OTHER	84	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS			33554432 words	1.8			16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH				.8 mm	85 Cel		32MX16	32M	-25 Cel					BOTTOM	R-PBGA-B84		1.95 V	1 mm		8 mm	Not Qualified		536870912 bit	1.7 V	SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE							11.6 mm		80 ns	1.8
S29WS256RAABHW000	Infineon Technologies	FLASH	OTHER	84	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS			33554432 words	1.8			16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH				.8 mm	85 Cel		32MX16	32M	-25 Cel					BOTTOM	R-PBGA-B84		1.95 V	1 mm		8 mm		BOTTOM/TOP	536870912 bit	1.7 V	SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE					NOR TYPE		11.6 mm		80 ns	1.8
S29WS512R0PBHW003	Infineon Technologies	FLASH	OTHER	84	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS			33554432 words	1.8			16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH				.8 mm	85 Cel		32MX16	32M	-25 Cel					BOTTOM	R-PBGA-B84		1.95 V	1 mm		8 mm	Not Qualified		536870912 bit	1.7 V	SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE							11.6 mm		80 ns	1.8
S29WS128R0SBHW003	Infineon Technologies	FLASH	OTHER	84	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS			33554432 words	1.8			16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH				.8 mm	85 Cel		32MX16	32M	-25 Cel					BOTTOM	R-PBGA-B84		1.95 V	1 mm		8 mm	Not Qualified		536870912 bit	1.7 V	SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE							11.6 mm		80 ns	1.8
S29WS256R0SBHW000	Infineon Technologies	FLASH	OTHER	84	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS			33554432 words	1.8			16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH				.8 mm	85 Cel		32MX16	32M	-25 Cel					BOTTOM	R-PBGA-B84		1.95 V	1 mm		8 mm		BOTTOM/TOP	536870912 bit	1.7 V	SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE					NOR TYPE		11.6 mm		80 ns	1.8
S29WS128R0SBHW202	Infineon Technologies	FLASH	OTHER	84	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS			33554432 words	1.8			16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH				.8 mm	85 Cel		32MX16	32M	-25 Cel					BOTTOM	R-PBGA-B84		1.95 V	1 mm		8 mm	Not Qualified	TOP	536870912 bit	1.7 V	SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE, TOP BOOT BLOCK							11.6 mm		80 ns	1.8
S29WS256R0PBHW203	Infineon Technologies	FLASH	OTHER	84	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS			33554432 words	1.8			16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH				.8 mm	85 Cel		32MX16	32M	-25 Cel					BOTTOM	R-PBGA-B84		1.95 V	1 mm		8 mm	Not Qualified	TOP	536870912 bit	1.7 V	SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE, TOP BOOT BLOCK							11.6 mm		80 ns	1.8
S29WS512R0SBHW000	Infineon Technologies	FLASH	OTHER	84	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS			33554432 words	1.8			16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH				.8 mm	85 Cel		32MX16	32M	-25 Cel					BOTTOM	R-PBGA-B84		1.95 V	1 mm		8 mm		BOTTOM/TOP	536870912 bit	1.7 V	SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE					NOR TYPE		11.6 mm		80 ns	1.8
S29WS512R0PBHW002	Infineon Technologies	FLASH	OTHER	84	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS			33554432 words	1.8			16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH				.8 mm	85 Cel		32MX16	32M	-25 Cel					BOTTOM	R-PBGA-B84		1.95 V	1 mm		8 mm	Not Qualified		536870912 bit	1.7 V	SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE							11.6 mm		80 ns	1.8
S29WS512RAABHW202	Infineon Technologies	FLASH	OTHER	84	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS			33554432 words	1.8			16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH				.8 mm	85 Cel		32MX16	32M	-25 Cel					BOTTOM	R-PBGA-B84		1.95 V	1 mm		8 mm	Not Qualified	TOP	536870912 bit	1.7 V	SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE, TOP BOOT BLOCK							11.6 mm		80 ns	1.8
S29WS128R0PBHW003	Infineon Technologies	FLASH	OTHER	84	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS			33554432 words	1.8			16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH				.8 mm	85 Cel		32MX16	32M	-25 Cel					BOTTOM	R-PBGA-B84		1.95 V	1 mm		8 mm	Not Qualified		536870912 bit	1.7 V	SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE							11.6 mm		80 ns	1.8
S29WS256RAABHW003	Infineon Technologies	FLASH	OTHER	84	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS			33554432 words	1.8			16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH				.8 mm	85 Cel		32MX16	32M	-25 Cel					BOTTOM	R-PBGA-B84		1.95 V	1 mm		8 mm	Not Qualified		536870912 bit	1.7 V	SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE							11.6 mm		80 ns	1.8
S29WS256R0SBHW002	Infineon Technologies	FLASH	OTHER	84	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS			33554432 words	1.8			16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH				.8 mm	85 Cel		32MX16	32M	-25 Cel					BOTTOM	R-PBGA-B84		1.95 V	1 mm		8 mm	Not Qualified		536870912 bit	1.7 V	SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE							11.6 mm		80 ns	1.8
S29WS512R0SBHW002	Infineon Technologies	FLASH	OTHER	84	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS			33554432 words	1.8			16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH				.8 mm	85 Cel		32MX16	32M	-25 Cel					BOTTOM	R-PBGA-B84		1.95 V	1 mm		8 mm	Not Qualified		536870912 bit	1.7 V	SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE							11.6 mm		80 ns	1.8
S29WS256RAABHW203	Infineon Technologies	FLASH	OTHER	84	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS			33554432 words	1.8			16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH				.8 mm	85 Cel		32MX16	32M	-25 Cel					BOTTOM	R-PBGA-B84		1.95 V	1 mm		8 mm	Not Qualified	TOP	536870912 bit	1.7 V	SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE, TOP BOOT BLOCK							11.6 mm		80 ns	1.8
S29WS128RAABHW202	Infineon Technologies	FLASH	OTHER	84	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS			33554432 words	1.8			16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH				.8 mm	85 Cel		32MX16	32M	-25 Cel					BOTTOM	R-PBGA-B84		1.95 V	1 mm		8 mm	Not Qualified	TOP	536870912 bit	1.7 V	SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE, TOP BOOT BLOCK							11.6 mm		80 ns	1.8
S29WS256R0PBHW202	Infineon Technologies	FLASH	OTHER	84	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS			33554432 words	1.8			16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH				.8 mm	85 Cel		32MX16	32M	-25 Cel					BOTTOM	R-PBGA-B84		1.95 V	1 mm		8 mm	Not Qualified	TOP	536870912 bit	1.7 V	SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE, TOP BOOT BLOCK							11.6 mm		80 ns	1.8
S29WS512R0SBHW203	Infineon Technologies	FLASH	OTHER	84	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS			33554432 words	1.8			16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH				.8 mm	85 Cel		32MX16	32M	-25 Cel					BOTTOM	R-PBGA-B84		1.95 V	1 mm		8 mm	Not Qualified	TOP	536870912 bit	1.7 V	SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE, TOP BOOT BLOCK							11.6 mm		80 ns	1.8
S29WS128R0SBHW002	Infineon Technologies	FLASH	OTHER	84	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS			33554432 words	1.8			16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH				.8 mm	85 Cel		32MX16	32M	-25 Cel					BOTTOM	R-PBGA-B84		1.95 V	1 mm		8 mm	Not Qualified		536870912 bit	1.7 V	SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE							11.6 mm		80 ns	1.8
S29WS512R0SBHW202	Infineon Technologies	FLASH	OTHER	84	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS			33554432 words	1.8			16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH				.8 mm	85 Cel		32MX16	32M	-25 Cel					BOTTOM	R-PBGA-B84		1.95 V	1 mm		8 mm	Not Qualified	TOP	536870912 bit	1.7 V	SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE, TOP BOOT BLOCK							11.6 mm		80 ns	1.8
S29WS512R0SBHW003	Infineon Technologies	FLASH	OTHER	84	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS			33554432 words	1.8			16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH				.8 mm	85 Cel		32MX16	32M	-25 Cel					BOTTOM	R-PBGA-B84		1.95 V	1 mm		8 mm	Not Qualified		536870912 bit	1.7 V	SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE							11.6 mm		80 ns	1.8
S29WS128RAABHW203	Infineon Technologies	FLASH	OTHER	84	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS			33554432 words	1.8			16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH				.8 mm	85 Cel		32MX16	32M	-25 Cel					BOTTOM	R-PBGA-B84		1.95 V	1 mm		8 mm	Not Qualified	TOP	536870912 bit	1.7 V	SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE, TOP BOOT BLOCK							11.6 mm		80 ns	1.8
S29WS512RAABHW203	Infineon Technologies	FLASH	OTHER	84	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS			33554432 words	1.8			16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH				.8 mm	85 Cel		32MX16	32M	-25 Cel					BOTTOM	R-PBGA-B84		1.95 V	1 mm		8 mm	Not Qualified	TOP	536870912 bit	1.7 V	SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE, TOP BOOT BLOCK							11.6 mm		80 ns	1.8
S29WS512R0SBHW200	Infineon Technologies	FLASH	OTHER	84	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS			33554432 words	1.8			16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH				.8 mm	85 Cel		32MX16	32M	-25 Cel					BOTTOM	R-PBGA-B84		1.95 V	1 mm		8 mm	Not Qualified	TOP	536870912 bit	1.7 V	SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE, TOP BOOT BLOCK					NOR TYPE		11.6 mm		80 ns	1.8
S29WS128RAABHW003	Infineon Technologies	FLASH	OTHER	84	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS			33554432 words	1.8			16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH				.8 mm	85 Cel		32MX16	32M	-25 Cel					BOTTOM	R-PBGA-B84		1.95 V	1 mm		8 mm	Not Qualified		536870912 bit	1.7 V	SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE							11.6 mm		80 ns	1.8
S29WS256RAABHW202	Infineon Technologies	FLASH	OTHER	84	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS			33554432 words	1.8			16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH				.8 mm	85 Cel		32MX16	32M	-25 Cel					BOTTOM	R-PBGA-B84		1.95 V	1 mm		8 mm	Not Qualified	TOP	536870912 bit	1.7 V	SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE, TOP BOOT BLOCK							11.6 mm		80 ns	1.8
S29WS128RAABHW002	Infineon Technologies	FLASH	OTHER	84	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS			33554432 words	1.8			16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH				.8 mm	85 Cel		32MX16	32M	-25 Cel					BOTTOM	R-PBGA-B84		1.95 V	1 mm		8 mm	Not Qualified		536870912 bit	1.7 V	SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE							11.6 mm		80 ns	1.8
S29WS256R0PBHW003	Infineon Technologies	FLASH	OTHER	84	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS			33554432 words	1.8			16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH				.8 mm	85 Cel		32MX16	32M	-25 Cel					BOTTOM	R-PBGA-B84		1.95 V	1 mm		8 mm	Not Qualified		536870912 bit	1.7 V	SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE							11.6 mm		80 ns	1.8
S29WS512P0SBAW003	Infineon Technologies	FLASH	OTHER	84	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	16K,64K	80 mA	33554432 words	1.8	YES	1.8	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA84,10X12,32	Flash Memories		.8 mm	85 Cel		32MX16	32M	-25 Cel	8, 510	YES	TIN SILVER COPPER		BOTTOM	R-PBGA-B84	3	1.95 V	1 mm		8 mm	Not Qualified	BOTTOM/TOP	536870912 bit	1.7 V	SYNCHRONOUS BURST MODE OPERATION POSSIBLE	8	e1			NOR TYPE	.000005 Amp	11.6 mm	YES	80 ns	1.8	YES
S29VS128RABBHW300	Infineon Technologies	FLASH	OTHER	44	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS			16 words	1.8			8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH				.5 mm	85 Cel		16X8	16	-25 Cel					BOTTOM	R-PBGA-B44		1.95 V	1 mm		6.2 mm	Not Qualified		128 bit	1.7 V								7.7 mm			1.8
S29XS128R0SBHW13	Infineon Technologies	FLASH	OTHER	44	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS			8388608 words	1.8			16	GRID ARRAY				.5 mm	85 Cel		8MX16	8M	-25 Cel					BOTTOM	R-PBGA-B44		1.95 V	1 mm		6.2 mm	Not Qualified	BOTTOM	134217728 bit	1.7 V	BOTTOM BOOT BLOCK, SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE							7.7 mm		80 ns	1.8
S29VS064R0PBHW010	Infineon Technologies	FLASH	OTHER	44	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	8K,32K	66 mA	4194304 words	1.8	YES	1.8	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA44,8X14,20	Flash Memories		.5 mm	85 Cel		4MX16	4M	-25 Cel	4,127	YES		YES	BOTTOM	R-PBGA-B44		1.95 V	1 mm		5 mm	Not Qualified	BOTTOM	67108864 bit	1.7 V	BOTTOM BOOT BLOCK, SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE			NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.00007 Amp	7.5 mm	YES	80 ns	1.8	YES
S29GL256P11FACR23	Infineon Technologies	FLASH	OTHER	64	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS			268435456 words	3.3			1	GRID ARRAY, LOW PROFILE				1 mm	85 Cel		256MX1	256M	0 Cel					BOTTOM	R-PBGA-B64		3.6 V	1.4 mm		11 mm	Not Qualified		268435456 bit	3 V						NOR TYPE		13 mm		110 ns	3
S29WS01GSABWHW030	Infineon Technologies	FLASH	OTHER	186	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS			67108864 words	1.8			16	GRID ARRAY, THIN PROFILE, FINE PITCH				.65 mm	85 Cel		64MX16	64M	-25 Cel					BOTTOM	R-PBGA-B186		1.95 V	1.2 mm		11 mm	Not Qualified		1073741824 bit	1.7 V	SYNCHRONOUS BURST ACCESS ALSO POSSIBLE							13 mm		115 ns	1.8
S29XS032R0SBHW013	Infineon Technologies	FLASH	OTHER	44	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS			2097152 words	1.8			16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH				.5 mm	85 Cel		2MX16	2M	-25 Cel					BOTTOM	R-PBGA-B44		1.95 V	1 mm		5 mm		BOTTOM	33554432 bit	1.7 V	BOTTOM BOOT BLOCK							7.5 mm		80 ns	1.8
S29VS128R0SBHW013	Infineon Technologies	FLASH	OTHER	44	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS/ASYNCHRONOUS	32K,128K	76 mA	16777216 words	1.8	NO		8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA44,8X14,20		10	.5 mm	85 Cel	3-STATE	16MX8	16M	-25 Cel	4,127	YES			BOTTOM	R-PBGA-B44		1.95 V	1 mm	100000 Write/Erase Cycles	6.2 mm	Not Qualified	BOTTOM	134217728 bit	1.7 V				NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.00004 Amp	7.7 mm	YES	80 ns	1.8	NO
S29WS128J0SBAW023	Infineon Technologies	FLASH	OTHER	84	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL		4K,32K	60 mA	8388608 words		YES	1.5,1.8	16	GRID ARRAY, FINE PITCH	BGA84,10X12,32	Flash Memories		.8 mm	85 Cel		8MX16	8M	-25 Cel	16,254	YES		YES	BOTTOM	R-PBGA-B84						Not Qualified	BOTTOM/TOP	134217728 bit							NOR TYPE	.00005 Amp		YES	45 ns		YES
S29WS128PABBAW002	Infineon Technologies	FLASH	OTHER	84	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	16K,64K	80 mA	8388608 words	1.8	YES	1.8	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA84,10X12,32	Flash Memories		.8 mm	85 Cel		8MX16	8M	-25 Cel	8,126	YES	TIN SILVER COPPER	YES	BOTTOM	R-PBGA-B84	3	1.95 V	1 mm		8 mm	Not Qualified	BOTTOM/TOP	134217728 bit	1.7 V	SYNCHRONOUS BURST MODE OPERATION POSSIBLE	8	e1			NOR TYPE	.000005 Amp	11.6 mm	YES	80 ns	1.8	YES
S29VS256R0PBHW003	Infineon Technologies	FLASH	OTHER	44	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS			16777216 words	1.8			16	GRID ARRAY				.5 mm	85 Cel		16MX16	16M	-25 Cel					BOTTOM	R-PBGA-B44		1.95 V	1 mm		6.2 mm	Not Qualified	TOP	268435456 bit	1.7 V	TOP BOOT BLOCK, SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE					NOR TYPE		7.7 mm		80 ns	1.8
S29XS032R0PBHW003	Infineon Technologies	FLASH	OTHER	44	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS			2097152 words	1.8			16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH				.5 mm	85 Cel		2MX16	2M	-25 Cel					BOTTOM	R-PBGA-B44		1.95 V	1 mm		5 mm		TOP	33554432 bit	1.7 V	TOP BOOT BLOCK							7.5 mm		80 ns	1.8
S29GL128P11FACR13	Infineon Technologies	FLASH	OTHER	64	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS			134217728 words	3.3			1	GRID ARRAY, LOW PROFILE				1 mm	85 Cel		128MX1	128M	0 Cel					BOTTOM	R-PBGA-B64		3.6 V	1.4 mm		11 mm	Not Qualified		134217728 bit	3 V						NOR TYPE		13 mm		110 ns	3

Flash Memory

Flash memory is a type of non-volatile computer memory that is commonly used in digital devices such as USB drives, solid-state drives, and digital cameras. It is a type of EEPROM (Electrically Erasable Programmable Read-Only Memory) that allows data to be erased and reprogrammed in blocks instead of one byte at a time. Flash memory uses a floating gate transistor to store data, which allows it to retain information even when the power is turned off.

Flash memory is widely used in digital devices because of its high capacity, small size, and fast access times. It is also more durable than other types of memory, such as hard disk drives, because it has no moving parts. This makes it ideal for use in portable devices that may be subject to physical shock or vibration.

There are two types of flash memory: NOR flash and NAND flash. NOR flash is faster than NAND flash, but it has lower density and higher cost per bit. NOR flash is typically used for code storage, such as firmware or boot code, because it provides faster access times. NAND flash has higher density and lower cost per bit, which makes it ideal for data storage applications.

Flash memory has a limited lifespan, as it can only be erased and reprogrammed a limited number of times. This is because the process of erasing and reprogramming the memory causes wear and tear on the floating gate transistor. However, modern flash memory devices have a sophisticated wear-leveling algorithm that distributes writes evenly across the memory, which extends the lifespan of the device.