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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Screening Level	Terminal Form	Parallel or Serial	Operating Mode	Sector Size (Words)	Maximum Supply Current	No. of Words	Nominal Supply Voltage / Vsup (V)	Mixed Memory Type	Toggle Bit	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Alternate Memory Width	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	No. of Sectors/Size	Command User Interface	Terminal Finish	Ready or Busy	Terminal Position	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Endurance	Maximum Clock Frequency (fCLK)	Width	Qualification	Serial Bus Type	Boot Block	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	Page Size (words)	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Type	Maximum Standby Current	Length	Common Flash Interface	Maximum Access Time	Programming Voltage (V)	Data Polling
SDINBDG4-8G	Western Digital	FLASH CARD	OTHER	153	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS			8589934592 words	3.3				8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA153,14X14,20			.5 mm	85 Cel		8GX8	8G	-25 Cel					BOTTOM	R-PBGA-B153		3.6 V	.8 mm	3000 Write/Erase Cycles		11 mm				68719476736 bit	2.7 V						MLC NAND TYPE		13.5 mm
MTFC4GACAJCN-1MWT	Micron Technology	FLASH CARD	OTHER	153	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS			4294967296 words	3.3		NO		8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA153,14X14,20			.5 mm	85 Cel	OPEN-DRAIN	4GX8	4G	-25 Cel		NO	TIN SILVER COPPER		BOTTOM	R-PBGA-B153		3.6 V	1 mm			11.5 mm				34359738368 bit	2.7 V	ALSO AVAILABE WITH TAPE AND REEL			30	260	MLC NAND TYPE		13 mm				NO
THGBMNG5D1LBAIT	Toshiba	FLASH	OTHER	153	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	ASYNCHRONOUS			4294967296 words					8	GRID ARRAY					85 Cel		4GX8	4G	-25 Cel					BOTTOM	R-PBGA-B153		3.6 V								34359738368 bit	2.7 V						MLC NAND TYPE					2.7
SDINBDG4-8G-I2	Western Digital	FLASH CARD	OTHER		VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL					8589934592 words					8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH					85 Cel		8GX8	8G	-25 Cel					BOTTOM			3.6 V	.8 mm	3000 Write/Erase Cycles		11.5 mm				68719476736 bit	2.7 V						MLC NAND TYPE		13 mm
KLM8G1GETF-B0410	Samsung	FLASH	OTHER	153	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS			8589934592 words	1.8				8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH				.5 mm	85 Cel		8GX8	8G	-25 Cel					BOTTOM	R-PBGA-B153		1.95 V	.8 mm		200 MHz	11.5 mm				68719476736 bit	1.7 V	ALSO OPERATES @ 3V SUP NOM					MLC NAND TYPE		13 mm			1.8
THGBMNG5D1LBAIL	Toshiba	FLASH CARD	OTHER	153	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL		ASYNCHRONOUS			4294967296 words					8	GRID ARRAY	BGA153,14X14,20			.5 mm	85 Cel		4GX8	4G	-25 Cel					BOTTOM	R-PBGA-B153		3.6 V				11 mm				34359738368 bit	2.7 V								13 mm
SDSDQAB-008G	Western Digital	FLASH CARD	OTHER		DIE	RECTANGULAR		YES	1	CMOS		NO LEAD					8589934592 words					8	UNCASED CHIP					85 Cel		8GX8	8G	-25 Cel					UPPER	R-XUUC-N										68719476736 bit							NAND TYPE
KLM8G1GETF-B041	Samsung	FLASH CARD	OTHER					YES	1	CMOS				ASYNCHRONOUS			8589934592 words	1.8				8	GRID ARRAY					85 Cel		8GX8	8G	-25 Cel									.8 mm			11.5 mm				68719476736 bit		3.3V SUPPLY IS ALSO AVAILABLE							13 mm			1.8
S71WS256PC0HH3YR0	Infineon Technologies	FLASH	OTHER	84	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS			16777216 words	1.8	FLASH+PSRAM		1.8	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA84,10X12,32		Other Memory ICs	.8 mm	85 Cel		16MX16	16M	-25 Cel					BOTTOM	R-PBGA-B84		1.95 V	1.2 mm			8 mm	Not Qualified			268435456 bit	1.7 V								11.6 mm		80 ns	1.8
MTFC8GAKAJCN-1MWT	Micron Technology	FLASH CARD	OTHER	153	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS			8589934592 words	3.3		NO		8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA153,14X14,20			.5 mm	85 Cel	OPEN-DRAIN	8GX8	8G	-25 Cel		NO			BOTTOM	R-PBGA-B153		3.6 V	1 mm			11.5 mm				68719476736 bit	2.7 V	ALSO AVAILABE WITH TAPE AND REEL			NOT SPECIFIED	NOT SPECIFIED	MLC NAND TYPE		13 mm				NO
THGBMJG6C1LBAIL	Kioxia Holdings	FLASH CARD	OTHER	153	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL					8589934592 words					8	GRID ARRAY	BGA153,14X14,20			.5 mm	85 Cel		8GX8	8G	-25 Cel					BOTTOM	R-PBGA-B153		3.6 V				11 mm				68719476736 bit	2.7 V								13 mm
KLMAG1JETD-B041	Samsung	FLASH CARD	OTHER					YES	1	CMOS							17179869184 words	1.8				8						85 Cel		16GX8	16G	-25 Cel									.8 mm			11.5 mm				137438953472 bit		3.3V SUPPLY IS ALSO AVAILABLE							13 mm			1.8
SDCS2/32GBSP	Kingston Technology Company	FLASH CARD	OTHER		DIE	RECTANGULAR	UNSPECIFIED	YES	1	CMOS		NO LEAD					34359738368 words	3.3				8	UNCASED CHIP					85 Cel		32GX8	32G	-25 Cel					UPPER	R-XUUC-N			2.1 mm			24 mm				274877906944 bit							NOR TYPE		32 mm			3.3
S29WS128P0SBFW000	Cypress Semiconductor	FLASH	OTHER	84	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	16K,64K	80 mA	8388608 words	1.8		YES	1.8	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA84,10X12,32		Flash Memories	.8 mm	85 Cel		8MX16	8M	-25 Cel	8,126	YES	Tin/Silver/Copper (Sn96.5Ag3.0Cu0.5)	YES	BOTTOM	R-PBGA-B84	3	1.95 V	1 mm			8 mm	Not Qualified		BOTTOM/TOP	134217728 bit	1.7 V	SYNCHRONOUS BURST MODE OPERATION POSSIBLE	8	e1	40	260	NOR TYPE	.000005 Amp	11.6 mm	YES	80 ns	1.8	YES
SDCS2/32GB	Kingston Technology Company	FLASH CARD	OTHER		DIE	RECTANGULAR	UNSPECIFIED	YES	1	CMOS		NO LEAD					34359738368 words	3.3				8	UNCASED CHIP					85 Cel		32GX8	32G	-25 Cel					UPPER	R-XUUC-N			1 mm			11 mm				274877906944 bit							NOR TYPE		15 mm			3.3
KLMAG1JETD-B0410	Samsung	FLASH	OTHER	153	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS			17179869184 words	1.8				8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH				.5 mm	85 Cel		16GX8	16G	-25 Cel					BOTTOM	R-PBGA-B153		1.95 V	.8 mm		200 MHz	11.5 mm				137438953472 bit	1.7 V	ALSO OPERATES @ 3V SUP NOM					MLC NAND TYPE		13 mm			1.8
EMMC04G-M627-X03U	Kingston Technology Company	FLASH CARD	OTHER	153	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL		SYNCHRONOUS			4294967296 words	3.3				8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA153,14X14,20			.5 mm	85 Cel	OPEN-DRAIN	4GX8	4G	-25 Cel					BOTTOM	R-PBGA-B153		3.6 V	1 mm		200 MHz	11.5 mm				34359738368 bit	2.7 V						MLC NAND TYPE		13 mm			3.3
MTFC2GMDEA-0MWTA	Micron Technology	FLASH	OTHER	153	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS			2147483648 words	3.3				8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH				.5 mm	85 Cel		2GX8	2G	-25 Cel			TIN SILVER COPPER NICKEL		BOTTOM	R-PBGA-B153		3.6 V	.8 mm		52 MHz	11.5 mm				17179869184 bit	2.7 V	ALSO HAVING MMC CONTROLLER		e2	30	260			13 mm			3.3
SDINBDG4-16G	Western Digital	FLASH CARD	OTHER	153	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS			17179869184 words	3.3				8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA153,14X14,20			.5 mm	85 Cel		16GX8	16G	-25 Cel					BOTTOM	R-PBGA-B153		3.6 V	.8 mm	3000 Write/Erase Cycles		11 mm				137438953472 bit	2.7 V						MLC NAND TYPE		13.5 mm
SDINBDG4-32G	Western Digital	FLASH CARD	OTHER	153	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS			34359738368 words	3.3				8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA153,14X14,20			.5 mm	85 Cel		32GX8	32G	-25 Cel					BOTTOM	R-PBGA-B153		3.6 V	1 mm	3000 Write/Erase Cycles		11 mm				274877906944 bit	2.7 V						MLC NAND TYPE		13.5 mm
S29WS256P0PBFW000	Infineon Technologies	FLASH	OTHER	84	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	16K,64K	80 mA	16777216 words	1.8		YES	1.8	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA84,10X12,32		Flash Memories	.8 mm	85 Cel		16MX16	16M	-25 Cel	8,254	YES	TIN SILVER COPPER	YES	BOTTOM	R-PBGA-B84	3	1.95 V	1 mm			8 mm	Not Qualified		BOTTOM/TOP	268435456 bit	1.7 V	SYNCHRONOUS BURST MODE OPERATION POSSIBLE	8	e1	40	260	NOR TYPE	.000005 Amp	11.6 mm	YES	80 ns	1.8	YES
SDCS2/128GB	Kingston Technology Company	FLASH CARD	OTHER		DIE	RECTANGULAR	UNSPECIFIED	YES	1	CMOS		NO LEAD					137438953472 words	3.3				8	UNCASED CHIP					85 Cel		128GX8	128G	-25 Cel					UPPER	R-XUUC-N			1 mm			11 mm				1099511627776 bit							NOR TYPE		15 mm			3.3
SDINBDG4-16G-I2	Western Digital	FLASH CARD	OTHER	153	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS			17179869184 words	3.3				8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA153,14X14,20			.5 mm	85 Cel		16GX8	16G	-25 Cel					BOTTOM	R-PBGA-B153		3.6 V	.8 mm	3000 Write/Erase Cycles		11 mm				137438953472 bit	2.7 V						MLC NAND TYPE		13.5 mm
W19B320ABT7H	Winbond Electronics	FLASH	OTHER	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	8K,64K	45 mA	2097152 words	3		YES	3/3.3	16	SMALL OUTLINE, THIN PROFILE	TSSOP48,.8,20	8	Flash Memories	.5 mm	85 Cel		2MX16	2M	-20 Cel	8,63	YES	MATTE TIN	YES	DUAL	R-PDSO-G48	3	3.6 V	1.2 mm			12 mm	Not Qualified		BOTTOM	33554432 bit	2.7 V			e3			NOR TYPE	.000005 Amp	18.4 mm	YES	70 ns	3	YES
SDCS2/64GB	Kingston Technology Company	FLASH CARD	OTHER		DIE	RECTANGULAR	UNSPECIFIED	YES	1	CMOS		NO LEAD					68719476736 words	3.3				8	UNCASED CHIP					85 Cel		64GX8	64G	-25 Cel					UPPER	R-XUUC-N			1 mm			11 mm				549755813888 bit							NOR TYPE		15 mm			3.3
KLMBG2JETD-B0410	Samsung	FLASH	OTHER	153	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS			34359738368 words	1.8				8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH				.5 mm	85 Cel		32GX8	32G	-25 Cel					BOTTOM	R-PBGA-B153		1.95 V	.8 mm		200 MHz	11.5 mm				274877906944 bit	1.7 V	ALSO OPERATES @ 3V SUP NOM					MLC NAND TYPE		13 mm			1.8
FEMC032GTTE7-T13-26	Flexxon Global	FLASH CARD	OTHER	100		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100; TS 16949	BALL					34359738368 words	3.3				8						85 Cel		32GX8	32G	-25 Cel					BOTTOM	R-PBGA-B100										274877906944 bit							MLC NAND TYPE
SDIN5D1-2G-L	Sandisk	FLASH	OTHER	153	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS			2147483648 words	3.3				8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH				.5 mm	85 Cel		2GX8	2G	-25 Cel					BOTTOM	R-PBGA-B153	3	3.6 V	1 mm			11.5 mm				17179869184 bit	2.7 V						MLC NAND TYPE		13 mm			3.3
TS8GUSDHC10	Transcend Information	FLASH	OTHER		DIE	RECTANGULAR	UNSPECIFIED	YES	1	CMOS		NO LEAD		ASYNCHRONOUS			8589934592 words					8	UNCASED CHIP					85 Cel		8GX8	8G	-25 Cel					UPPER	R-XUUC-N		3.6 V								68719476736 bit	2.7 V				NOT SPECIFIED	NOT SPECIFIED	NOR TYPE					2.7
S29WS256P0SBFW000	Infineon Technologies	FLASH	OTHER	84	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	16K,64K	80 mA	16777216 words	1.8		YES	1.8	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA84,10X12,32		Flash Memories	.8 mm	85 Cel		16MX16	16M	-25 Cel	8,254	YES	TIN SILVER COPPER	YES	BOTTOM	R-PBGA-B84	3	1.95 V	1 mm			8 mm	Not Qualified		BOTTOM/TOP	268435456 bit	1.7 V	SYNCHRONOUS BURST MODE OPERATION POSSIBLE	8	e1	40	260	NOR TYPE	.000005 Amp	11.6 mm	YES	80 ns	1.8	YES
TS32GSDHC10	Transcend Information	FLASH CARD	OTHER		DIE	RECTANGULAR	UNSPECIFIED	YES	1	CMOS		NO LEAD		ASYNCHRONOUS			34359738368 words					8	UNCASED CHIP					85 Cel		32GX8	32G	-25 Cel					UPPER	R-XUUC-N		3.6 V								274877906944 bit	2.7 V				NOT SPECIFIED	NOT SPECIFIED						2.7
KLM4G1FETE-B041	Samsung	FLASH CARD	OTHER		BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL					4294967296 words	1.8				8	GRID ARRAY					85 Cel		4GX8	4G	-25 Cel					BOTTOM	R-PBGA-B										34359738368 bit		3.3V SUPPLY IS ALSO AVAILABLE					NAND TYPE					1.8
SDCS2/256GB	Kingston Technology Company	FLASH CARD	OTHER		DIE	RECTANGULAR	UNSPECIFIED	YES	1	CMOS		NO LEAD					274877906944 words	3.3				8	UNCASED CHIP					85 Cel		256GX8	256G	-25 Cel					UPPER	R-XUUC-N			1 mm			11 mm				2199023255552 bit							NOR TYPE		15 mm			3.3
TS16GSDHC10	Transcend Information	FLASH CARD	OTHER		DIE	RECTANGULAR	UNSPECIFIED	YES	1	CMOS		NO LEAD		ASYNCHRONOUS			17179869184 words					8	UNCASED CHIP					85 Cel		16GX8	16G	-25 Cel					UPPER	R-XUUC-N		3.6 V								137438953472 bit	2.7 V				NOT SPECIFIED	NOT SPECIFIED						2.7
THGBM5G5A1JBAIR	Toshiba	FLASH CARD	OTHER	153		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL					4294967296 words					8						85 Cel		4GX8	4G	-25 Cel					BOTTOM	R-PBGA-B153		3.6 V								34359738368 bit	2.7 V						NAND TYPE					2.7
TS4GUSDHC10	Transcend Information	FLASH	OTHER		DIE	RECTANGULAR	UNSPECIFIED	YES	1	CMOS		NO LEAD		ASYNCHRONOUS			4294967296 words					8	UNCASED CHIP					85 Cel		4GX8	4G	-25 Cel					UPPER	R-XUUC-N		3.6 V								34359738368 bit	2.7 V				NOT SPECIFIED	NOT SPECIFIED	NOR TYPE					2.7
SDCS2/512GB	Kingston Technology Company	FLASH CARD	OTHER		DIE	RECTANGULAR	UNSPECIFIED	YES	1	CMOS		NO LEAD					549755813888 words	3.3				8	UNCASED CHIP					85 Cel		512GX8	512G	-25 Cel					UPPER	R-XUUC-N			1 mm			11 mm				4398046511104 bit							NOR TYPE		15 mm			3.3
THGBMJG8C2LBAIL	Kioxia Holdings	FLASH CARD	OTHER	153	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL					34359738368 words					8	GRID ARRAY	BGA153,14X14,20			.5 mm	85 Cel		32GX8	32G	-25 Cel					BOTTOM	R-PBGA-B153		3.6 V				11 mm				274877906944 bit	2.7 V								13 mm
TS8GUSDHC10U1	Transcend Information	FLASH CARD	OTHER	8	DIE	RECTANGULAR			1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS			8589934592 words					8	UNCASED CHIP	DIE OR CHIP				85 Cel		8GX8	8G	-25 Cel					SINGLE	R-XUUC-N8								SPI		68719476736 bit							MLC NAND TYPE
SDSDAE-008G	Sandisk	FLASH CARD	OTHER		DIE	RECTANGULAR		YES	1	CMOS		NO LEAD					8589934592 words					8	UNCASED CHIP					85 Cel		8GX8	8G	-25 Cel					UPPER	R-XUUC-N										68719476736 bit							NAND TYPE
SDSQUAR-032G-GN6MA	Western Digital	FLASH CARD	OTHER		DIE	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD					34359738368 words					8	UNCASED CHIP					85 Cel		32GX8	32G	-25 Cel					UPPER	R-XUUC-N										274877906944 bit							NOR TYPE
FEMC002GTTE7-T14-17	Flexxon Global	FLASH CARD	OTHER	153		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100; TS 16949	BALL					2147483648 words	3.3				8						85 Cel		2GX8	2G	-25 Cel					BOTTOM	R-PBGA-B153										17179869184 bit							SLC NAND TYPE
FEMC004GTTE7-T13-17	Flexxon Global	FLASH CARD	OTHER	100		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100; TS 16949	BALL					4294967296 words	3.3				8						85 Cel		4GX8	4G	-25 Cel					BOTTOM	R-PBGA-B100										34359738368 bit							SLC NAND TYPE
FEMC004GTTE7-T14-16	Flexxon Global	FLASH CARD	OTHER	153		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100; TS 16949	BALL					4294967296 words	3.3				8						85 Cel		4GX8	4G	-25 Cel					BOTTOM	R-PBGA-B153										34359738368 bit							MLC NAND TYPE
FEMC016GTTE7-T13-16	Flexxon Global	FLASH CARD	OTHER	100		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100; TS 16949	BALL					17179869184 words	3.3				8						85 Cel		16GX8	16G	-25 Cel					BOTTOM	R-PBGA-B100										137438953472 bit							MLC NAND TYPE
FEMC016GTTE7-T13-27	Flexxon Global	FLASH CARD	OTHER	100		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100; TS 16949	BALL					17179869184 words	3.3				8						85 Cel		16GX8	16G	-25 Cel					BOTTOM	R-PBGA-B100										137438953472 bit							SLC NAND TYPE
FEMC064GTTE7-T14-46	Flexxon Global	FLASH CARD	OTHER	153		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100; TS 16949	BALL					68719476736 words	3.3				8						85 Cel		64GX8	64G	-25 Cel					BOTTOM	R-PBGA-B153										549755813888 bit							MLC NAND TYPE
MTFC8GLDEA-1MWT	Micron Technology	FLASH CARD	OTHER	153	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS			8589934592 words	3.3		NO		8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA153,14X14,20			.5 mm	85 Cel		8GX8	8G	-25 Cel		NO	TIN SILVER COPPER NICKEL		BOTTOM	R-PBGA-B153		3.6 V	.8 mm		52 MHz	11.5 mm				68719476736 bit	2.7 V						MLC NAND TYPE		13 mm			3.3	NO

Flash Memory

Flash memory is a type of non-volatile computer memory that is commonly used in digital devices such as USB drives, solid-state drives, and digital cameras. It is a type of EEPROM (Electrically Erasable Programmable Read-Only Memory) that allows data to be erased and reprogrammed in blocks instead of one byte at a time. Flash memory uses a floating gate transistor to store data, which allows it to retain information even when the power is turned off.

Flash memory is widely used in digital devices because of its high capacity, small size, and fast access times. It is also more durable than other types of memory, such as hard disk drives, because it has no moving parts. This makes it ideal for use in portable devices that may be subject to physical shock or vibration.

There are two types of flash memory: NOR flash and NAND flash. NOR flash is faster than NAND flash, but it has lower density and higher cost per bit. NOR flash is typically used for code storage, such as firmware or boot code, because it provides faster access times. NAND flash has higher density and lower cost per bit, which makes it ideal for data storage applications.

Flash memory has a limited lifespan, as it can only be erased and reprogrammed a limited number of times. This is because the process of erasing and reprogramming the memory causes wear and tear on the floating gate transistor. However, modern flash memory devices have a sophisticated wear-leveling algorithm that distributes writes evenly across the memory, which extends the lifespan of the device.