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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Screening Level	Terminal Form	Parallel or Serial	Operating Mode	Sector Size (Words)	Maximum Supply Current	No. of Words	Nominal Supply Voltage / Vsup (V)	Toggle Bit	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Alternate Memory Width	Sub-Category	Minimum Data Retention Time	Terminal Pitch	Maximum Operating Temperature	Reverse Pinout	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	No. of Sectors/Size	Command User Interface	Terminal Finish	Ready or Busy	Terminal Position	No. of Ports	Write Protection	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Endurance	Maximum Clock Frequency (fCLK)	Width	Qualification	Serial Bus Type	Boot Block	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	Page Size (words)	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Type	Maximum Standby Current	Length	Common Flash Interface	Maximum Access Time	Programming Voltage (V)	Data Polling
SDSDQ-2048	Western Digital	FLASH CARD	OTHER	8	DIE	RECTANGULAR	UNSPECIFIED	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS			2147483648 words				8	UNCASED CHIP					1.1 mm	85 Cel	NO		2GX8	2G	-25 Cel		YES			UPPER		SOFTWARE	R-XUUC-N8		3.6 V	.95 mm		50 MHz	11 mm				17179869184 bit	2.7 V						NAND TYPE		15 mm	NO		2.7	NO
SDSDAF3-008G-I	Western Digital	FLASH CARD	OTHER		DIE	UNSPECIFIED	UNSPECIFIED	YES	1	CMOS		NO LEAD		ASYNCHRONOUS			8589934592 words				8	UNCASED CHIP						85 Cel			8GX8	8G	-25 Cel					UPPER			X-XUUC-N		3.6 V								68719476736 bit	2.7 V											2.7
EMMC16G-M525-X01U	Kingston Technology Company	FLASH	OTHER	153	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL										GRID ARRAY, VERY THIN PROFILE, FINE PITCH					.5 mm											BOTTOM			R-PBGA-B153			1 mm			11.5 mm									NOT SPECIFIED	NOT SPECIFIED	MLC NAND TYPE		13 mm			3.3
FEMC008GTTE7-T13-16	Flexxon Global	FLASH CARD	OTHER	100		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100; TS 16949	BALL					8589934592 words	3.3			8							85 Cel			8GX8	8G	-25 Cel					BOTTOM			R-PBGA-B100										68719476736 bit							MLC NAND TYPE
FEMC008GTTE7-T13-17	Flexxon Global	FLASH CARD	OTHER	100		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100; TS 16949	BALL					8589934592 words	3.3			8							85 Cel			8GX8	8G	-25 Cel					BOTTOM			R-PBGA-B100										68719476736 bit							SLC NAND TYPE
FEMC016GTTE7-T14-16	Flexxon Global	FLASH CARD	OTHER	153		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100; TS 16949	BALL					17179869184 words	3.3			8							85 Cel			16GX8	16G	-25 Cel					BOTTOM			R-PBGA-B153										137438953472 bit							MLC NAND TYPE
SDCS2/32GB-2P1A	Kingston Technology Company	FLASH CARD	OTHER		DIE	RECTANGULAR	UNSPECIFIED	YES	1	CMOS		NO LEAD					34359738368 words	3.3			8	UNCASED CHIP						85 Cel			32GX8	32G	-25 Cel					UPPER			R-XUUC-N										274877906944 bit							NOR TYPE					3.3
SDCS2/32GB-3P1A	Kingston Technology Company	FLASH CARD	OTHER		DIE	RECTANGULAR	UNSPECIFIED	YES	1	CMOS		NO LEAD					34359738368 words	3.3			8	UNCASED CHIP						85 Cel			32GX8	32G	-25 Cel					UPPER			R-XUUC-N										274877906944 bit							NOR TYPE					3.3
SDINBDG4-32G-I2	Western Digital	FLASH CARD	OTHER	153	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS			34359738368 words	3.3			8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA153,14X14,20				.5 mm	85 Cel			32GX8	32G	-25 Cel					BOTTOM			R-PBGA-B153		3.6 V	1 mm	3000 Write/Erase Cycles		11 mm				274877906944 bit	2.7 V						MLC NAND TYPE		13.5 mm
SDSDQ-4096	Western Digital	FLASH CARD	OTHER	8	DIE	RECTANGULAR	UNSPECIFIED	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS			4294967296 words				8	UNCASED CHIP					1.1 mm	85 Cel	NO		4GX8	4G	-25 Cel		YES			UPPER		SOFTWARE	R-XUUC-N8		3.6 V	.95 mm		50 MHz	11 mm				34359738368 bit	2.7 V						NAND TYPE		15 mm	NO		2.7	NO
SST49LF008A-33-4C-WHE	Microchip Technology	FLASH	OTHER	32	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	SYNCHRONOUS	4K	24 mA	1048576 words	3.3	YES	3.3	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP32,.56,20		Flash Memories	100	.5 mm	85 Cel		3-STATE	1MX8	1M	0 Cel	256	YES	MATTE TIN		DUAL	1		R-PDSO-G32	3	3.6 V	1.2 mm	100000 Write/Erase Cycles	33 MHz	8 mm	Not Qualified		TOP	8388608 bit	3 V			e3	40	260	NOR TYPE	.0001 Amp	12.4 mm		120 ns	3.3	YES
TS2GUSDC	Transcend Information	FLASH	OTHER		DIE	RECTANGULAR	UNSPECIFIED	YES	1	CMOS		NO LEAD		ASYNCHRONOUS			2147483648 words				8	UNCASED CHIP						85 Cel			2GX8	2G	-25 Cel					UPPER			R-XUUC-N		3.6 V								17179869184 bit	2.7 V				NOT SPECIFIED	NOT SPECIFIED	NOR TYPE					2.7
TS32GUSDHC10U1	Transcend Information	FLASH CARD	OTHER	8	DIE	RECTANGULAR			1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS			34359738368 words				8	UNCASED CHIP	DIE OR CHIP					85 Cel			32GX8	32G	-25 Cel					SINGLE			R-XUUC-N8								SPI		274877906944 bit							MLC NAND TYPE
PC28F128G18FE	Micron Technology	FLASH	OTHER	64	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS	128K	50 mA	8388608 words	1.8	NO	1.8	16	GRID ARRAY, THIN PROFILE	BGA64,8X8,40		Flash Memories		1 mm	85 Cel			8MX16	8M	-30 Cel	64	YES	TIN SILVER COPPER		BOTTOM			R-PBGA-B64		2 V	1.2 mm			8 mm	Not Qualified			134217728 bit	1.7 V			e1			NOR TYPE	.000115 Amp	10 mm	YES	96 ns	2.7	NO
SST49LF080A-33-4C-WHE	Microchip Technology	FLASH	OTHER	32	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	SYNCHRONOUS	4K	24 mA	1048576 words	3.3	YES		8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP32,.56,20			100	.5 mm	85 Cel		3-STATE	1MX8	1M	0 Cel	256	YES	Matte Tin (Sn) - annealed		DUAL	1		R-PDSO-G32	3	3.6 V	1.2 mm	100000 Write/Erase Cycles	33 MHz	8 mm	Not Qualified		TOP	8388608 bit	3 V			e3	40	260	NOR TYPE	.0001 Amp	12.4 mm		120 ns	3	YES
KLM8G1GEME-B041	Samsung	FLASH CARD	OTHER	153		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL					8589934592 words	1.8			8							85 Cel			8GX8	8G	-25 Cel					BOTTOM			R-PBGA-B153										68719476736 bit							NAND TYPE					1.8
S40410081B1B1W000	Cypress Semiconductor	FLASH	OTHER	153	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS			8589934592 words	3			8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH		4			.5 mm	85 Cel			8GX8	8G	-25 Cel					BOTTOM			R-PBGA-B153		3.6 V	1 mm			11.5 mm				68719476736 bit	2.7 V						MLC NAND TYPE		13 mm			3
S40410161B1B1W010	Cypress Semiconductor	FLASH	OTHER	153	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS			17179869184 words	3			8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH		4			.5 mm	85 Cel			16GX8	16G	-25 Cel					BOTTOM			R-PBGA-B153		3.6 V	1 mm			11.5 mm				137438953472 bit	2.7 V						MLC NAND TYPE		13 mm			3
S40410081B1B2W000	Cypress Semiconductor	FLASH	OTHER	100	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS			8589934592 words	3			8	GRID ARRAY, LOW PROFILE		4			1 mm	85 Cel			8GX8	8G	-25 Cel					BOTTOM			R-PBGA-B100		3.6 V	1.4 mm			14 mm				68719476736 bit	2.7 V						MLC NAND TYPE		18 mm			3
S40410081B1B2W003	Cypress Semiconductor	FLASH	OTHER	100	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS			8589934592 words	3			8	GRID ARRAY, LOW PROFILE		4			1 mm	85 Cel			8GX8	8G	-25 Cel					BOTTOM			R-PBGA-B100		3.6 V	1.4 mm			14 mm				68719476736 bit	2.7 V								18 mm			3
S40410161B1B2W010	Cypress Semiconductor	FLASH	OTHER	100	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS			17179869184 words	3			8	GRID ARRAY, LOW PROFILE		4			1 mm	85 Cel			16GX8	16G	-25 Cel					BOTTOM			R-PBGA-B100		3.6 V	1.4 mm			14 mm				137438953472 bit	2.7 V						MLC NAND TYPE		18 mm			3
S40410161B1B2W013	Cypress Semiconductor	FLASH	OTHER	100	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS			17179869184 words	3			8	GRID ARRAY, LOW PROFILE		4			1 mm	85 Cel			16GX8	16G	-25 Cel					BOTTOM			R-PBGA-B100		3.6 V	1.4 mm			14 mm				137438953472 bit	2.7 V				NOT SPECIFIED	NOT SPECIFIED			18 mm			3
THGBF7G8K4LBATR	Toshiba	FLASH	OTHER	153	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS			34359738368 words				8	GRID ARRAY						85 Cel			32GX8	32G	-25 Cel					BOTTOM			R-PBGA-B153		3.6 V								274877906944 bit	2.7 V						MLC NAND TYPE					2.7
MTFC16GJDEC-2MWT	Micron Technology	FLASH CARD	OTHER	169	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS			17179869184 words	3.3	NO		8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA169,14X28,20				.5 mm	85 Cel			16GX8	16G	-25 Cel		NO	TIN SILVER COPPER		BOTTOM			R-PBGA-B169		3.6 V	.8 mm		52 MHz	14 mm				137438953472 bit	2.7 V						MLC NAND TYPE		18 mm			3.3	NO
SDCS2/64GBSP	Kingston Technology Company	FLASH CARD	OTHER		DIE	RECTANGULAR	UNSPECIFIED	YES	1	CMOS		NO LEAD					68719476736 words	3.3			8	UNCASED CHIP						85 Cel			64GX8	64G	-25 Cel					UPPER			R-XUUC-N			2.1 mm			24 mm				549755813888 bit							NOR TYPE		32 mm			3.3
SFSD4096N1BW1MT-E-DF-111-STD	Swissbit Ag	FLASH CARD	OTHER	8	DIE	RECTANGULAR	UNSPECIFIED	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS			4294967296 words	3.3			8	UNCASED CHIP						85 Cel			4GX8	4G	-25 Cel					UPPER			R-XUUC-N8		3.6 V	1 mm		50 MHz	11 mm				34359738368 bit	2.7 V				NOT SPECIFIED	NOT SPECIFIED			15 mm			3.3
KLMCG4JETD-B0410	Samsung	FLASH	OTHER	153	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS			68719476736 words	1.8			8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH					.5 mm	85 Cel			64GX8	64G	-25 Cel					BOTTOM			R-PBGA-B153		1.95 V	1 mm		200 MHz	11.5 mm				549755813888 bit	1.7 V	ALSO OPERATES @ 3V SUP NOM					MLC NAND TYPE		13 mm			1.8
MTFC4GLDEA-0MWT	Micron Technology	FLASH CARD	OTHER	153	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS			4294967296 words	3.3	NO		8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA153,14X14,20				.5 mm	85 Cel			4GX8	4G	-25 Cel		NO	TIN SILVER COPPER		BOTTOM			R-PBGA-B153		3.6 V	.8 mm		52 MHz	11.5 mm				34359738368 bit	2.7 V						MLC NAND TYPE		13 mm			3.3	NO
MTFC4GLDEA-0MWTTR	Micron Technology	FLASH CARD	OTHER	153	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS			4294967296 words	3.3	NO		8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA153,14X14,20				.5 mm	85 Cel			4GX8	4G	-25 Cel		NO	TIN SILVER COPPER		BOTTOM			R-PBGA-B153		3.6 V	.8 mm		52 MHz	11.5 mm				34359738368 bit	2.7 V			e1			MLC NAND TYPE		13 mm			3.3	NO
PM8607B1-F3EI	Microchip Technology	FLASH	OTHER	1085		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL																115 Cel					0 Cel					BOTTOM			R-PBGA-B1085																	NAND TYPE
SFSD4096N2BM1TO-E-GE-2A1-STD	Swissbit Ag	FLASH CARD	OTHER	8	DIE	RECTANGULAR	UNSPECIFIED	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS			4294967296 words	3.3			8	UNCASED CHIP						85 Cel			4GX8	4G	-25 Cel					UPPER			R-XUUC-N8		3.6 V	1.1 mm		100 MHz	11 mm				34359738368 bit	2.7 V				NOT SPECIFIED	NOT SPECIFIED	MLC NAND TYPE		15 mm			3.3
SST49LF016C-33-4C-WHE	Microchip Technology	FLASH	OTHER	32	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	SYNCHRONOUS	16K,8K,32K,64K	18 mA	2097152 words	3.3	NO	3.3	8	SMALL OUTLINE, THIN PROFILE	TSSOP32,.56,20		Flash Memories		.5 mm	85 Cel			2MX8	2M	0 Cel	1,2,1,31	YES	MATTE TIN	YES	DUAL			R-PDSO-G32	3	3.6 V	1.2 mm		33 MHz	8 mm	Not Qualified		TOP	16777216 bit	3 V			e3			NOR TYPE	.0001 Amp	12.4 mm		11 ns	3	NO
TS4GUSDC10	Transcend Information	FLASH CARD	OTHER		DIE	RECTANGULAR	UNSPECIFIED	YES	1	CMOS		NO LEAD										UNCASED CHIP																UPPER			R-XUUC-N																						2.7
TS4GUSDC4	Transcend Information	FLASH	OTHER		DIE	RECTANGULAR	UNSPECIFIED	YES	1	CMOS		NO LEAD		ASYNCHRONOUS			4294967296 words				8	UNCASED CHIP						85 Cel			4GX8	4G	-25 Cel					UPPER			R-XUUC-N		3.6 V								34359738368 bit	2.7 V				NOT SPECIFIED	NOT SPECIFIED	NOR TYPE					2.7
DA28F640J5-150	Intel	FLASH	OTHER	56	SSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	128K	80 mA	4194304 words	5	NO	3/3.3,5	16	SMALL OUTLINE, SHRINK PITCH	SOP56,.6,32	8	Flash Memories		.8 mm	85 Cel		3-STATE	4MX16	4M	-20 Cel	64	YES		YES	DUAL			R-PDSO-G56		5.5 V	1.9 mm			13.3 mm	Not Qualified			67108864 bit	4.5 V						NOR TYPE	.000125 Amp	23.7 mm	YES	150 ns	5	NO
S29WS128P0PBFW000	Cypress Semiconductor	FLASH	OTHER	84	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	16K,64K	80 mA	8388608 words	1.8	YES	1.8	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA84,10X12,32		Flash Memories		.8 mm	85 Cel			8MX16	8M	-25 Cel	8,126	YES	Tin/Silver/Copper (Sn96.5Ag3.0Cu0.5)	YES	BOTTOM			R-PBGA-B84	3	1.95 V	1 mm			8 mm	Not Qualified		BOTTOM/TOP	134217728 bit	1.7 V	SYNCHRONOUS BURST MODE OPERATION POSSIBLE	8	e1	40	260	NOR TYPE	.000005 Amp	11.6 mm	YES	80 ns	1.8	YES
THGBMAG6A2JBAIR	Toshiba	FLASH CARD	OTHER	153		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL					8589934592 words				8							85 Cel			8GX8	8G	-25 Cel					BOTTOM			R-PBGA-B153		3.6 V								68719476736 bit	2.7 V						NAND TYPE					2.7
DA28F640J5A-150	Intel	FLASH	OTHER	56	SSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	128K	80 mA	4194304 words	5	NO	3/3.3,5	16	SMALL OUTLINE, SHRINK PITCH	SOP56,.6,32	8	Flash Memories		.8 mm	85 Cel			4MX16	4M	-20 Cel	64	YES	TIN LEAD	YES	DUAL			R-PDSO-G56		5.5 V	1.9 mm			13.3 mm	Not Qualified			67108864 bit	4.5 V			e0			NOR TYPE	.000125 Amp	23.7 mm	YES	150 ns	5	NO
KLM8G2FE3B-B001	Samsung	FLASH CARD	OTHER	153	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS			8589934592 words	3.3			8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH					.5 mm	85 Cel			8GX8	8G	-25 Cel					BOTTOM			R-PBGA-B153		3.6 V	1 mm		52 MHz	11.5 mm				68719476736 bit	2.7 V	1.8V NOMINAL SUPPLY IS ALSO AVAILABLE							13 mm			3.3
S29PL064J70BFW120	Cypress Semiconductor	FLASH	OTHER	48	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	4K,32K	70 mA	4194304 words	3	YES	3/3.3	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA48,6X8,32		Flash Memories		.8 mm	85 Cel			4MX16	4M	-25 Cel	16,126	YES	Tin/Silver/Copper (Sn96.5Ag3.0Cu0.5)	YES	BOTTOM			R-PBGA-B48	3	3.6 V	1 mm			6.15 mm	Not Qualified		BOTTOM/TOP	67108864 bit	2.7 V	TOP AND BOTTOM BOOT BLOCK	8	e1	40	260	NOR TYPE	.000005 Amp	8.15 mm	YES	70 ns	3	YES
THGBM5G8A4JBAIR	Toshiba	FLASH CARD	OTHER	153		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL					34359738368 words				8							85 Cel			32GX8	32G	-25 Cel					BOTTOM			R-PBGA-B153		3.6 V								274877906944 bit	2.7 V						NAND TYPE					2.7
DA28F320J5-120	Intel	FLASH	OTHER	56	SSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	128K	80 mA	2097152 words	5	NO	3/3.3,5	16	SMALL OUTLINE, SHRINK PITCH	SOP56,.6,32	8	Flash Memories		.8 mm	85 Cel		3-STATE	2MX16	2M	-20 Cel	32	YES	TIN LEAD	YES	DUAL			R-PDSO-G56		5.5 V	1.9 mm			13.3 mm	Not Qualified			33554432 bit	4.5 V	CONFIGURABLE AS 2M X 16; BLOCK ERASE	16/32	e0			NOR TYPE	.000125 Amp	23.7 mm	YES	120 ns	5	NO
KLM4G1FE3B-B001	Samsung	FLASH CARD	OTHER	153	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS			4294967296 words	3.3			8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH					.5 mm	85 Cel			4GX8	4G	-25 Cel					BOTTOM			R-PBGA-B153		3.6 V	1 mm		52 MHz	11.5 mm				34359738368 bit	2.7 V	1.8V NOMINAL SUPPLY IS ALSO AVAILABLE							13 mm			3.3
KLMBG8FE3B-A001	Samsung	FLASH CARD	OTHER	169	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS			34359738368 words	3.3			8	GRID ARRAY, THIN PROFILE, FINE PITCH					.5 mm	85 Cel			32GX8	32G	-25 Cel					BOTTOM			R-PBGA-B169		3.6 V	1.2 mm		52 MHz	12 mm				274877906944 bit	2.7 V	1.8V NOMINAL SUPPLY IS ALSO AVAILABLE							16 mm			3.3
LH28F160BJD-TTL80	Sharp Corporation	FLASH	OTHER	42	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS		THROUGH-HOLE	PARALLEL		4K,32K	60 mA	1048576 words	3.3	NO	3.3	16	IN-LINE	DIP42,.6		Flash Memories		2.54 mm	85 Cel			1MX16	1M	0 Cel	8,31	YES			DUAL			R-PDIP-T42							Not Qualified		TOP	16777216 bit							NOR TYPE	.00003 Amp			80 ns		NO
S29GL512P10FFCR10	Cypress Semiconductor	FLASH	OTHER	64	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	128K	110 mA	536870912 words	3.3	YES	3.3	1	GRID ARRAY, LOW PROFILE	BGA64,8X8,40	8	Flash Memories		1 mm	85 Cel			512MX1	512M	0 Cel	512	YES	TIN SILVER COPPER	YES	BOTTOM			R-PBGA-B64	3	3.6 V	1.4 mm			11 mm	Not Qualified			536870912 bit	3 V		8/16	e1	30	260	NOR TYPE	.000005 Amp	13 mm	YES	100 ns	3	YES
THGBMAG5A1JBAIR	Toshiba	FLASH CARD	OTHER	153		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL					4294967296 words				8							85 Cel			4GX8	4G	-25 Cel					BOTTOM			R-PBGA-B153		3.6 V								34359738368 bit	2.7 V						NAND TYPE					2.7
SST49LF008A-33-4C-EIE	Microchip Technology	FLASH	OTHER	40	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	SYNCHRONOUS	4K	24 mA	1048576 words	3.3	YES	3.3	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP40,.8,20		Flash Memories		.5 mm	85 Cel			1MX8	1M	0 Cel	256	YES	Matte Tin (Sn) - annealed		DUAL			R-PDSO-G40	3	3.6 V	1.2 mm			10 mm	Not Qualified		TOP	8388608 bit	3 V			e3	40	260	NOR TYPE	.0001 Amp	18.4 mm		120 ns	3	YES

Flash Memory

Flash memory is a type of non-volatile computer memory that is commonly used in digital devices such as USB drives, solid-state drives, and digital cameras. It is a type of EEPROM (Electrically Erasable Programmable Read-Only Memory) that allows data to be erased and reprogrammed in blocks instead of one byte at a time. Flash memory uses a floating gate transistor to store data, which allows it to retain information even when the power is turned off.

Flash memory is widely used in digital devices because of its high capacity, small size, and fast access times. It is also more durable than other types of memory, such as hard disk drives, because it has no moving parts. This makes it ideal for use in portable devices that may be subject to physical shock or vibration.

There are two types of flash memory: NOR flash and NAND flash. NOR flash is faster than NAND flash, but it has lower density and higher cost per bit. NOR flash is typically used for code storage, such as firmware or boot code, because it provides faster access times. NAND flash has higher density and lower cost per bit, which makes it ideal for data storage applications.

Flash memory has a limited lifespan, as it can only be erased and reprogrammed a limited number of times. This is because the process of erasing and reprogramming the memory causes wear and tear on the floating gate transistor. However, modern flash memory devices have a sophisticated wear-leveling algorithm that distributes writes evenly across the memory, which extends the lifespan of the device.