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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Terminal Form	Parallel or Serial	Operating Mode	Sector Size (Words)	Maximum Supply Current	No. of Words	Nominal Supply Voltage / Vsup (V)	Mixed Memory Type	Toggle Bit	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Alternate Memory Width	Sub-Category	Minimum Data Retention Time	Terminal Pitch	Maximum Operating Temperature	Reverse Pinout	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	No. of Sectors/Size	Command User Interface	Terminal Finish	Ready or Busy	Terminal Position	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Endurance	Maximum Clock Frequency (fCLK)	Width	Qualification	Boot Block	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Type	Maximum Standby Current	Length	Maximum Access Time	Programming Voltage (V)	Data Polling
LE28FV4101H-70T	Onsemi	FLASH	OTHER	52	TFLGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	BUTT	PARALLEL	ASYNCHRONOUS			262144 words	3.3				16	GRID ARRAY, THIN PROFILE, FINE PITCH		8			.65 mm	85 Cel			256KX16	256K	-25 Cel					BOTTOM	S-PBGA-B52		3.6 V	1.2 mm			6 mm	Not Qualified		4194304 bit	3 V							6 mm	70 ns	3
LE28FV4101H-40T	Onsemi	FLASH	OTHER	52	TFLGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	BUTT	PARALLEL	ASYNCHRONOUS			262144 words	3.3				16	GRID ARRAY, THIN PROFILE, FINE PITCH		8			.65 mm	85 Cel			256KX16	256K	-25 Cel					BOTTOM	S-PBGA-B52		3.6 V	1.2 mm			6 mm	Not Qualified		4194304 bit	3 V							6 mm	40 ns	3
LE28FV4101T-50T	Onsemi	FLASH	OTHER	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS			262144 words	3.3				16	SMALL OUTLINE, THIN PROFILE		8			.5 mm	85 Cel			256KX16	256K	-25 Cel					DUAL	R-PDSO-G48		3.6 V	1.2 mm			12 mm	Not Qualified		4194304 bit	3 V							18.4 mm	50 ns	3
LE28DW8102T-90	Onsemi	FLASH	OTHER	48	TSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	PARALLEL		32K	60 mA	524288 words	3		YES	3	16	SMALL OUTLINE, THIN PROFILE	TSOP48(UNSPEC)		Flash Memories			80 Cel			512KX16	512K	-40 Cel	16	NO			DUAL	R-PDSO-G48							Not Qualified		8388608 bit						NOR TYPE	.00004 Amp		90 ns		YES
LE28FU4101H-10T	Onsemi	FLASH	OTHER	52	TFLGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	BUTT	PARALLEL	ASYNCHRONOUS			262144 words	2.7				16	GRID ARRAY, THIN PROFILE, FINE PITCH		8			.65 mm	85 Cel			256KX16	256K	-25 Cel					BOTTOM	S-PBGA-B52		3.6 V	1.2 mm			6 mm	Not Qualified		4194304 bit	2.3 V							6 mm	100 ns	2.7
LE28FW4101H-70T	Onsemi	FLASH	OTHER	52	TFLGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	BUTT	PARALLEL	ASYNCHRONOUS			262144 words	3				16	GRID ARRAY, THIN PROFILE, FINE PITCH		8			.65 mm	85 Cel			256KX16	256K	-25 Cel					BOTTOM	S-PBGA-B52		3.6 V	1.2 mm			6 mm	Not Qualified		4194304 bit	2.7 V							6 mm	70 ns	2.7
LE28FW4101H-45T	Onsemi	FLASH	OTHER	52	TFLGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	BUTT	PARALLEL	ASYNCHRONOUS			262144 words	3				16	GRID ARRAY, THIN PROFILE, FINE PITCH		8			.65 mm	85 Cel			256KX16	256K	-25 Cel					BOTTOM	S-PBGA-B52		3.6 V	1.2 mm			6 mm	Not Qualified		4194304 bit	2.7 V							6 mm	45 ns	2.7
LE28FU4101T-10T	Onsemi	FLASH	OTHER	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS			262144 words	2.7				16	SMALL OUTLINE, THIN PROFILE		8			.5 mm	85 Cel			256KX16	256K	-25 Cel					DUAL	R-PDSO-G48		3.6 V	1.2 mm			12 mm	Not Qualified		4194304 bit	2.3 V							18.4 mm	100 ns	2.7
LE28FV4101T-70T	Onsemi	FLASH	OTHER	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS			262144 words	3.3				16	SMALL OUTLINE, THIN PROFILE		8			.5 mm	85 Cel			256KX16	256K	-25 Cel					DUAL	R-PDSO-G48		3.6 V	1.2 mm			12 mm	Not Qualified		4194304 bit	3 V							18.4 mm	70 ns	3
LE28FV4101H-50T	Onsemi	FLASH	OTHER	52	TFLGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	BUTT	PARALLEL	ASYNCHRONOUS			262144 words	3.3				16	GRID ARRAY, THIN PROFILE, FINE PITCH		8			.65 mm	85 Cel			256KX16	256K	-25 Cel					BOTTOM	S-PBGA-B52		3.6 V	1.2 mm			6 mm	Not Qualified		4194304 bit	3 V							6 mm	50 ns	3
LE28FU4101H-85T	Onsemi	FLASH	OTHER	52	TFLGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	BUTT	PARALLEL	ASYNCHRONOUS			262144 words	2.7				16	GRID ARRAY, THIN PROFILE, FINE PITCH		8			.65 mm	85 Cel			256KX16	256K	-25 Cel					BOTTOM	S-PBGA-B52		3.6 V	1.2 mm			6 mm	Not Qualified		4194304 bit	2.3 V							6 mm	85 ns	2.7
LE28FW4101T-70T	Onsemi	FLASH	OTHER	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS			262144 words	3				16	SMALL OUTLINE, THIN PROFILE		8			.5 mm	85 Cel			256KX16	256K	-25 Cel					DUAL	R-PDSO-G48		3.6 V	1.2 mm			12 mm	Not Qualified		4194304 bit	2.7 V							18.4 mm	70 ns	2.7
LE28FU4101T-85T	Onsemi	FLASH	OTHER	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS			262144 words	2.7				16	SMALL OUTLINE, THIN PROFILE		8			.5 mm	85 Cel			256KX16	256K	-25 Cel					DUAL	R-PDSO-G48		3.6 V	1.2 mm			12 mm	Not Qualified		4194304 bit	2.3 V							18.4 mm	85 ns	2.7
LE28FW4101H-55T	Onsemi	FLASH	OTHER	52	TFLGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	BUTT	PARALLEL	ASYNCHRONOUS			262144 words	3				16	GRID ARRAY, THIN PROFILE, FINE PITCH		8			.65 mm	85 Cel			256KX16	256K	-25 Cel					BOTTOM	S-PBGA-B52		3.6 V	1.2 mm			6 mm	Not Qualified		4194304 bit	2.7 V							6 mm	55 ns	2.7
LE28FW4101T-55T	Onsemi	FLASH	OTHER	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS			262144 words	3				16	SMALL OUTLINE, THIN PROFILE		8			.5 mm	85 Cel			256KX16	256K	-25 Cel					DUAL	R-PDSO-G48		3.6 V	1.2 mm			12 mm	Not Qualified		4194304 bit	2.7 V							18.4 mm	55 ns	2.7
LE28FW4101T-45T	Onsemi	FLASH	OTHER	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS			262144 words	3				16	SMALL OUTLINE, THIN PROFILE		8			.5 mm	85 Cel			256KX16	256K	-25 Cel					DUAL	R-PDSO-G48		3.6 V	1.2 mm			12 mm	Not Qualified		4194304 bit	2.7 V							18.4 mm	45 ns	2.7
LE25W81QES00-AH-1	Onsemi	FLASH	OTHER	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	NO LEAD	SERIAL	SYNCHRONOUS			1048576 words	2.6				8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE					1.27 mm	70 Cel			1MX8	1M	-20 Cel			MATTE TIN		DUAL	R-PDSO-N8	3	3.6 V	.8 mm		30 MHz	5 mm			8388608 bit	2.45 V	OPERATING TEMP FOR WRITE OPERATION 0 TO 70	e3	30	260	NOR TYPE		6 mm		3
M29W400T-120M5	STMicroelectronics	FLASH	OTHER	44	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	20 mA	262144 words	3.3		YES	3/3.3	16	SMALL OUTLINE	SOP44,.63	8	Flash Memories		1.27 mm	85 Cel		3-STATE	256KX16	256K	-20 Cel	1,2,1,7	YES	Matte Tin (Sn)	YES	DUAL	R-PDSO-G44		3.6 V	2.62 mm	100000 Write/Erase Cycles		13.3 mm	Not Qualified	TOP	4194304 bit	2.7 V	TOP BOOT BLOCK	e3			NOR TYPE	.00005 Amp	28.2 mm	120 ns	2.7	YES
M29W040-200N5TR	STMicroelectronics	FLASH	OTHER	32	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	64K	40 mA	524288 words	3.3		YES	3/3.3	8	SMALL OUTLINE, THIN PROFILE	TSSOP32,.8,20		Flash Memories		.5 mm	85 Cel		3-STATE	512KX8	512K	-20 Cel	8	YES	TIN LEAD		DUAL	R-PDSO-G32		3.6 V	1.2 mm	100000 Write/Erase Cycles		8 mm	Not Qualified		4194304 bit	2.7 V		e0			NOR TYPE	.000005 Amp	18.4 mm	200 ns	3	YES
M29W040-150K5	STMicroelectronics	FLASH	OTHER	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	64K	40 mA	524288 words	3.3		YES	3/3.3	8	CHIP CARRIER	LDCC32,.5X.6		Flash Memories		1.27 mm	85 Cel		3-STATE	512KX8	512K	-20 Cel	8	YES	MATTE TIN		QUAD	R-PQCC-J32		3.6 V	3.56 mm	100000 Write/Erase Cycles		11.4554 mm	Not Qualified		4194304 bit	2.7 V		e3			NOR TYPE	.000005 Amp	13.65 mm	150 ns	3	YES
M29W400B-90M5R	STMicroelectronics	FLASH	OTHER	44	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS			262144 words	3.3				16	SMALL OUTLINE		8			1.27 mm	85 Cel			256KX16	256K	-20 Cel					DUAL	R-PDSO-G44		3.6 V	2.62 mm			13.3 mm	Not Qualified	BOTTOM	4194304 bit	3 V	BOTTOM BOOT BLOCK				NOR TYPE		28.2 mm	90 ns	3
M29F040-120N5R	STMicroelectronics	FLASH	OTHER	32	TSOP1-R	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	64K	60 mA	524288 words	5		YES	5	8	SMALL OUTLINE, THIN PROFILE	TSSOP32,.8,20		Flash Memories	20	.5 mm	85 Cel	YES	3-STATE	512KX8	512K	-20 Cel	8	YES	TIN LEAD		DUAL	R-PDSO-G32		5.5 V	1.2 mm	100000 Write/Erase Cycles		8 mm	Not Qualified		4194304 bit	4.5 V	100000 ERASE/PROGRAM CYCLES; 20 YEARS DATA RETENTION; BLOCK ERASE; BYTE PROGRAMMABLE	e0			NOR TYPE	.0001 Amp	18.4 mm	120 ns	5	YES
M39432-12VNC5T	STMicroelectronics	FLASH	OTHER	40	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		20 mA	524288 words	3.3	EEPROM+FLASH		3.3	8	SMALL OUTLINE, THIN PROFILE	TSSOP40,.8,20		Other Memory ICs	10	.5 mm	85 Cel			512KX8	512K	-20 Cel			TIN LEAD		DUAL	R-PDSO-G40		3.6 V	1.2 mm			10 mm	Not Qualified		4194304 bit	3 V	100000 ERASE/WRITE CYCLES; 10 YEARS DATA RETENTION; BUILT-IN 256K BIT EEPROM	e0			NOR TYPE	.000002 Amp	18.4 mm	120 ns	3
M50FLW080ANB5	STMicroelectronics	FLASH	OTHER	32	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	SYNCHRONOUS	4K,64K	60 mA	1048576 words	3.3		NO	3.3	8	SMALL OUTLINE, THIN PROFILE	TSSOP32,.56,20		Flash Memories		.5 mm	85 Cel			1MX8	1M	-20 Cel	48,13	YES	TIN LEAD		DUAL	R-PDSO-G32		3.6 V	1.2 mm			8 mm	Not Qualified		8388608 bit	3 V		e0			NOR TYPE	.0001 Amp	12.4 mm	11 ns	3	NO
M29W800T-100N5	STMicroelectronics	FLASH	OTHER	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	20 mA	1048576 words			YES	3/3.3	8	SMALL OUTLINE, THIN PROFILE	TSSOP48,.8,20	16	Flash Memories		.5 mm	85 Cel		3-STATE	1MX8	1M	-20 Cel	1,2,1,15	YES	TIN LEAD	YES	DUAL	R-PDSO-G48		3.6 V	1.2 mm	100000 Write/Erase Cycles		12 mm	Not Qualified	TOP	8388608 bit	2.7 V		e0			NOR TYPE	.0001 Amp	18.4 mm	100 ns	3	YES
M29W400B-150N5TR	STMicroelectronics	FLASH	OTHER	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	20 mA	262144 words	3.3		YES	3/3.3	16	SMALL OUTLINE, THIN PROFILE	TSSOP48,.8,20	8	Flash Memories		.5 mm	85 Cel		3-STATE	256KX16	256K	-20 Cel	1,2,1,7	YES	TIN LEAD	YES	DUAL	R-PDSO-G48		3.6 V	1.2 mm	100000 Write/Erase Cycles		12 mm	Not Qualified	BOTTOM	4194304 bit	2.7 V	BOTTOM BOOT BLOCK	e0			NOR TYPE	.00005 Amp	18.4 mm	150 ns	2.7	YES
M29F040-120XN5	STMicroelectronics	FLASH	OTHER	32	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	64K	60 mA	524288 words	5		YES	5	8	SMALL OUTLINE, THIN PROFILE	TSSOP32,.8,20		Flash Memories		.5 mm	85 Cel		3-STATE	512KX8	512K	-20 Cel	8	YES	TIN LEAD		DUAL	R-PDSO-G32		5.25 V	1.2 mm	100000 Write/Erase Cycles		8 mm	Not Qualified		4194304 bit	4.75 V		e0			NOR TYPE	.0001 Amp	18.4 mm	120 ns	5	YES
M28F411-60N5TR	STMicroelectronics	FLASH	OTHER	40	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS			524288 words	5				8	SMALL OUTLINE, THIN PROFILE					.5 mm	85 Cel			512KX8	512K	-20 Cel					DUAL	R-PDSO-G40		5.5 V	1.2 mm			10 mm	Not Qualified	TOP	4194304 bit	4.5 V					NOR TYPE		18.4 mm	60 ns	12
M28W421-180N5	STMicroelectronics	FLASH	OTHER	40	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	PARALLEL		16K,8K,96K,128K	25 mA	524288 words	3		NO	3	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP40,.8,20		Flash Memories		.5 mm	85 Cel			512KX8	512K	-20 Cel	1,2,1,3	YES	TIN LEAD		DUAL	R-PDSO-G40				100000 Write/Erase Cycles			Not Qualified	BOTTOM	4194304 bit			e0			NOR TYPE	.0000012 Amp		180 ns		NO
M29W800AT100M5T	STMicroelectronics	FLASH	OTHER	44	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	20 mA	524288 words	3		YES	3/3.3	16	SMALL OUTLINE	SOP44,.63	8	Flash Memories	20	1.27 mm	85 Cel			512KX16	512K	-20 Cel	1,2,1,15	YES	Matte Tin (Sn)	YES	DUAL	R-PDSO-G44		3.6 V	2.8 mm	100000 Write/Erase Cycles		13.3 mm	Not Qualified	TOP	8388608 bit	2.7 V	20 YEARS DATA RETENTION; TOP BOOT BLOCK	e3			NOR TYPE	.0001 Amp	28.2 mm	100 ns	2.7	YES
M29W800AT120M5T	STMicroelectronics	FLASH	OTHER	44	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	20 mA	524288 words	3		YES	3/3.3	16	SMALL OUTLINE	SOP44,.63	8	Flash Memories	20	1.27 mm	85 Cel			512KX16	512K	-20 Cel	1,2,1,15	YES	Matte Tin (Sn)	YES	DUAL	R-PDSO-G44		3.6 V	2.8 mm	100000 Write/Erase Cycles		13.3 mm	Not Qualified	TOP	8388608 bit	2.7 V	20 YEARS DATA RETENTION; TOP BOOT BLOCK	e3			NOR TYPE	.0001 Amp	28.2 mm	120 ns	2.7	YES
M29R800T-150M5	STMicroelectronics	FLASH	OTHER	44	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	60 mA	1048576 words	3.3		YES	3/3.3	8	SMALL OUTLINE	SOP44,.63	16	Flash Memories		1.27 mm	85 Cel		3-STATE	1MX8	1M	-20 Cel	1,2,1,15	YES	TIN LEAD	YES	DUAL	R-PDSO-G44		3.6 V	2.62 mm			13.3 mm	Not Qualified	TOP	8388608 bit	2.7 V		e0			NOR TYPE	.000005 Amp	28.2 mm	150 ns	3	YES
M29W400T-100N5TR	STMicroelectronics	FLASH	OTHER	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	20 mA	262144 words	3.3		YES	3/3.3	16	SMALL OUTLINE, THIN PROFILE	TSSOP48,.8,20	8	Flash Memories		.5 mm	85 Cel		3-STATE	256KX16	256K	-20 Cel	1,2,1,7	YES	TIN LEAD	YES	DUAL	R-PDSO-G48		3.6 V	1.2 mm	100000 Write/Erase Cycles		12 mm	Not Qualified	TOP	4194304 bit	2.7 V	TOP BOOT BLOCK	e0			NOR TYPE	.00005 Amp	18.4 mm	100 ns	2.7	YES
M29W040-150K5TR	STMicroelectronics	FLASH	OTHER	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	64K	40 mA	524288 words	3.3		YES	3/3.3	8	CHIP CARRIER	LDCC32,.5X.6		Flash Memories		1.27 mm	85 Cel		3-STATE	512KX8	512K	-20 Cel	8	YES	MATTE TIN		QUAD	R-PQCC-J32		3.6 V	3.56 mm	100000 Write/Erase Cycles		11.4554 mm	Not Qualified		4194304 bit	2.7 V		e3			NOR TYPE	.000005 Amp	13.65 mm	150 ns	3	YES
M28W431-180N5TR	STMicroelectronics	FLASH	OTHER	40	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS			524288 words	3				8	SMALL OUTLINE, THIN PROFILE					.5 mm	85 Cel			512KX8	512K	-20 Cel					DUAL	R-PDSO-G40		3.6 V	1.2 mm			10 mm	Not Qualified	TOP	4194304 bit	2.7 V	TOP BOOT BLOCK				NOR TYPE		18.4 mm	180 ns	12
M29W800T-120M5	STMicroelectronics	FLASH	OTHER	44	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	20 mA	1048576 words			YES	3/3.3	8	SMALL OUTLINE	SOP44,.63	16	Flash Memories		1.27 mm	85 Cel		3-STATE	1MX8	1M	-20 Cel	1,2,1,15	YES	MATTE TIN	YES	DUAL	R-PDSO-G44		3.6 V	2.62 mm	100000 Write/Erase Cycles		13.3 mm	Not Qualified	TOP	8388608 bit	2.7 V		e3			NOR TYPE	.0001 Amp	28.2 mm	120 ns	3	YES
M29R800D-100M5	STMicroelectronics	FLASH	OTHER	44	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS			1048576 words	3.3				8	SMALL OUTLINE		16			1.27 mm	85 Cel		3-STATE	1MX8	1M	-20 Cel					DUAL	R-PDSO-G44		3.6 V	2.62 mm			13.3 mm	Not Qualified	BOTTOM/TOP	8388608 bit	2.7 V					NOR TYPE		28.2 mm	100 ns	3
M29F040-150N5R	STMicroelectronics	FLASH	OTHER	32	TSOP1-R	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	64K	60 mA	524288 words	5		YES	5	8	SMALL OUTLINE, THIN PROFILE	TSSOP32,.8,20		Flash Memories	20	.5 mm	85 Cel	YES	3-STATE	512KX8	512K	-20 Cel	8	YES	TIN LEAD		DUAL	R-PDSO-G32		5.5 V	1.2 mm	100000 Write/Erase Cycles		8 mm	Not Qualified		4194304 bit	4.5 V	100000 ERASE/PROGRAM CYCLES; 20 YEARS DATA RETENTION; BLOCK ERASE; BYTE PROGRAMMABLE	e0			NOR TYPE	.0001 Amp	18.4 mm	150 ns	5	YES
M29R008T-120N5	STMicroelectronics	FLASH	OTHER	40	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS			1048576 words					8	SMALL OUTLINE, THIN PROFILE					.5 mm	85 Cel		3-STATE	1MX8	1M	-20 Cel					DUAL	R-PDSO-G40		3.6 V	1.2 mm			10 mm	Not Qualified		8388608 bit	2.7 V					NOR TYPE		18.4 mm	120 ns	3
M29F040-70N5TR	STMicroelectronics	FLASH	OTHER	32	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	64K	40 mA	524288 words	5		YES	5	8	SMALL OUTLINE, THIN PROFILE	TSSOP32,.8,20		Flash Memories		.5 mm	85 Cel		3-STATE	512KX8	512K	-20 Cel	8	YES	TIN LEAD		DUAL	R-PDSO-G32		5.5 V	1.2 mm	100000 Write/Erase Cycles		8 mm	Not Qualified		4194304 bit	4.5 V		e0			NOR TYPE	.00005 Amp	18.4 mm	70 ns	5	YES
M29F400B-70M5	STMicroelectronics	FLASH	OTHER	44	SOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	PARALLEL		16K,8K,32K,64K	60 mA	262144 words	5		YES	5	16	SMALL OUTLINE	SOP44,.63	8	Flash Memories		1.27 mm	85 Cel			256KX16	256K	-20 Cel	1,2,1,7	YES	TIN LEAD	YES	DUAL	R-PDSO-G44				100000 Write/Erase Cycles			Not Qualified	BOTTOM	4194304 bit			e0			NOR TYPE	.0001 Amp		70 ns		YES
M28F221-120YN5TR	STMicroelectronics	FLASH	OTHER	40	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS			262144 words	5				8	SMALL OUTLINE, THIN PROFILE					.5 mm	85 Cel			256KX8	256K	-20 Cel					DUAL	R-PDSO-G40		5.5 V	1.2 mm			10 mm	Not Qualified	BOTTOM	2097152 bit	4.5 V	100000 PROGRAM/ERASE CYCLES; BLOCK ERASE; BOTTOM BOOT BLOCK				NOR TYPE		18.4 mm	120 ns	12
M29W040-100NZ5TR	STMicroelectronics	FLASH	OTHER	32	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	64K	40 mA	524288 words	3.3		YES	3.3	8	SMALL OUTLINE, THIN PROFILE	TSSOP32,.56,20		Flash Memories		.5 mm	85 Cel		3-STATE	512KX8	512K	-20 Cel	8	YES	TIN LEAD		DUAL	R-PDSO-G32		3.6 V	1.2 mm	100000 Write/Erase Cycles		8 mm	Not Qualified		4194304 bit	3 V		e0			NOR TYPE	.000005 Amp	12.4 mm	100 ns	3	YES
M29W004T-150N5	STMicroelectronics	FLASH	OTHER	40	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	20 mA	524288 words	3		YES	3/3.3	8	SMALL OUTLINE, THIN PROFILE	TSSOP40,.8,20		Flash Memories		.5 mm	85 Cel		3-STATE	512KX8	512K	-20 Cel	1,2,1,7	YES	TIN LEAD	YES	DUAL	R-PDSO-G40		3.6 V	1.2 mm	100000 Write/Erase Cycles		10 mm	Not Qualified	TOP	4194304 bit	2.7 V	TOP BOOT BLOCK	e0			NOR TYPE	.00005 Amp	18.4 mm	150 ns	2.7	YES
M29F400B-70XN5	STMicroelectronics	FLASH	OTHER	48	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	PARALLEL		16K,8K,32K,64K	60 mA	262144 words	5		YES	5	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP48,.8,20	8	Flash Memories		.5 mm	85 Cel			256KX16	256K	-20 Cel	1,2,1,7	YES	TIN LEAD	YES	DUAL	R-PDSO-G48				100000 Write/Erase Cycles			Not Qualified	BOTTOM	4194304 bit			e0			NOR TYPE	.0001 Amp		70 ns		YES
M50FLW040AK5TG	STMicroelectronics	FLASH	OTHER	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	SYNCHRONOUS		60 mA	524288 words	3.3		NO	3.3	8	CHIP CARRIER	LDCC32,.5X.6		Flash Memories		1.27 mm	85 Cel			512KX8	512K	-20 Cel	8	YES	MATTE TIN	YES	QUAD	R-PQCC-J32		3.6 V	3.56 mm			11.43 mm	Not Qualified		4194304 bit	3 V		e3			NOR TYPE	.0001 Amp	13.97 mm	11 ns	3	NO
M29F040-70XN5RTR	STMicroelectronics	FLASH	OTHER	32	TSOP1-R	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	64K	40 mA	524288 words	5		YES	5	8	SMALL OUTLINE, THIN PROFILE	TSSOP32,.8,20		Flash Memories	20	.5 mm	85 Cel	YES	3-STATE	512KX8	512K	-20 Cel	8	YES	TIN LEAD		DUAL	R-PDSO-G32		5.25 V	1.2 mm	100000 Write/Erase Cycles		8 mm	Not Qualified		4194304 bit	4.75 V	100000 ERASE/PROGRAM CYCLES; 20 YEARS DATA RETENTION; BLOCK ERASE; BYTE PROGRAMMABLE	e0			NOR TYPE	.00005 Amp	18.4 mm	70 ns	5	YES
M29W800T-100M5TR	STMicroelectronics	FLASH	OTHER	44	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	20 mA	1048576 words			YES	3/3.3	8	SMALL OUTLINE	SOP44,.63	16	Flash Memories		1.27 mm	85 Cel		3-STATE	1MX8	1M	-20 Cel	1,2,1,15	YES	MATTE TIN	YES	DUAL	R-PDSO-G44		3.6 V	2.62 mm	100000 Write/Erase Cycles		13.3 mm	Not Qualified	TOP	8388608 bit	2.7 V	TOP BOOT BLOCK	e3			NOR TYPE	.0001 Amp	28.2 mm	100 ns	3	YES

Flash Memory

Flash memory is a type of non-volatile computer memory that is commonly used in digital devices such as USB drives, solid-state drives, and digital cameras. It is a type of EEPROM (Electrically Erasable Programmable Read-Only Memory) that allows data to be erased and reprogrammed in blocks instead of one byte at a time. Flash memory uses a floating gate transistor to store data, which allows it to retain information even when the power is turned off.

Flash memory is widely used in digital devices because of its high capacity, small size, and fast access times. It is also more durable than other types of memory, such as hard disk drives, because it has no moving parts. This makes it ideal for use in portable devices that may be subject to physical shock or vibration.

There are two types of flash memory: NOR flash and NAND flash. NOR flash is faster than NAND flash, but it has lower density and higher cost per bit. NOR flash is typically used for code storage, such as firmware or boot code, because it provides faster access times. NAND flash has higher density and lower cost per bit, which makes it ideal for data storage applications.

Flash memory has a limited lifespan, as it can only be erased and reprogrammed a limited number of times. This is because the process of erasing and reprogramming the memory causes wear and tear on the floating gate transistor. However, modern flash memory devices have a sophisticated wear-leveling algorithm that distributes writes evenly across the memory, which extends the lifespan of the device.