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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Terminal Form	Parallel or Serial	Operating Mode	Sector Size (Words)	Maximum Supply Current	No. of Words	Nominal Supply Voltage / Vsup (V)	Mixed Memory Type	Toggle Bit	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Alternate Memory Width	Sub-Category	Minimum Data Retention Time	Terminal Pitch	Maximum Operating Temperature	Reverse Pinout	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	No. of Sectors/Size	Command User Interface	Terminal Finish	Ready or Busy	Terminal Position	JESD-30 Code	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Endurance	Width	Qualification	Boot Block	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	Page Size (words)	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Type	Maximum Standby Current	Length	Common Flash Interface	Maximum Access Time	Programming Voltage (V)	Data Polling
M29W040-150NZ5TR	STMicroelectronics	FLASH	OTHER	32	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	64K	40 mA	524288 words	3.3		YES	3/3.3	8	SMALL OUTLINE, THIN PROFILE	TSSOP32,.56,20		Flash Memories		.5 mm	85 Cel		3-STATE	512KX8	512K	-20 Cel	8	YES	TIN LEAD		DUAL	R-PDSO-G32	3.6 V	1.2 mm	100000 Write/Erase Cycles	8 mm	Not Qualified		4194304 bit	2.7 V			e0			NOR TYPE	.000005 Amp	12.4 mm		150 ns	3	YES
M50FLW040AK5T	STMicroelectronics	FLASH	OTHER	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	SYNCHRONOUS	4K,64K	60 mA	524288 words	3.3		NO	3.3	8	CHIP CARRIER	LDCC32,.5X.6		Flash Memories		1.27 mm	85 Cel			512KX8	512K	-20 Cel	48,5	YES	TIN LEAD	YES	QUAD	R-PQCC-J32	3.6 V	3.56 mm		11.43 mm	Not Qualified	TOP	4194304 bit	3 V			e0			NOR TYPE	.0001 Amp	13.97 mm		11 ns	3	NO
M29W800AT90N5T	STMicroelectronics	FLASH	OTHER	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	20 mA	524288 words	3.3		YES	3/3.3	16	SMALL OUTLINE, THIN PROFILE	TSSOP48,.8,20	8	Flash Memories	20	.5 mm	85 Cel			512KX16	512K	-20 Cel	1,2,1,15	YES	TIN LEAD	YES	DUAL	R-PDSO-G48	3.6 V	1.2 mm	100000 Write/Erase Cycles	12 mm	Not Qualified	TOP	8388608 bit	3 V	20 YEARS DATA RETENTION; TOP BOOT BLOCK		e0			NOR TYPE	.0001 Amp	18.4 mm		90 ns	2.7	YES
M50FW040K5	STMicroelectronics	FLASH	OTHER	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	SYNCHRONOUS		60 mA	524288 words	3.3		NO	3.3	8	CHIP CARRIER	LDCC32,.5X.6		Flash Memories		1.27 mm	85 Cel			512KX8	512K	-20 Cel	8	YES	TIN LEAD	YES	QUAD	R-PQCC-J32	3.6 V	3.55 mm		11.43 mm	Not Qualified		4194304 bit	3 V			e0			NOR TYPE	.0001 Amp	13.97 mm		11 ns	3	NO
M50FW040N5T	STMicroelectronics	FLASH	OTHER	40	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	SYNCHRONOUS		60 mA	524288 words	3.3		NO	3.3	8	SMALL OUTLINE, THIN PROFILE	TSSOP40,.8,20		Flash Memories		.5 mm	85 Cel			512KX8	512K	-20 Cel	8	YES	TIN LEAD	YES	DUAL	R-PDSO-G40	3.6 V	1.2 mm		10 mm	Not Qualified		4194304 bit	3 V			e0			NOR TYPE	.0001 Amp	18.4 mm		11 ns	3	NO
M50FLW080AK5TP	STMicroelectronics	FLASH	OTHER	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	SYNCHRONOUS	4K,64K	60 mA	1048576 words	3.3		NO	3.3	8	CHIP CARRIER	LDCC32,.5X.6		Flash Memories		1.27 mm	85 Cel			1MX8	1M	-20 Cel	48,13	YES	MATTE TIN		QUAD	R-PQCC-J32	3.6 V	3.56 mm		11.43 mm	Not Qualified		8388608 bit	3 V			e3			NOR TYPE	.0001 Amp	13.97 mm		11 ns	3	NO
M29W400B-150ZA5	STMicroelectronics	FLASH	OTHER	48	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	20 mA	524288 words			YES	3/3.3	8	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA48,6X8,32	8	Flash Memories		.8 mm	85 Cel			512KX8	512K	-20 Cel	1,2,1,7	YES	TIN SILVER COPPER	YES	BOTTOM	R-PBGA-B48	3.6 V	1.35 mm	100000 Write/Erase Cycles	6 mm	Not Qualified	BOTTOM	4194304 bit	2.7 V	CONFG AS 256K X 16; BOTTOM BOOT BLOCK		e1			NOR TYPE	.00005 Amp	9 mm		150 ns	2.7	YES
M28F411-70N5TR	STMicroelectronics	FLASH	OTHER	40	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS			524288 words	5				8	SMALL OUTLINE, THIN PROFILE					.5 mm	85 Cel			512KX8	512K	-20 Cel					DUAL	R-PDSO-G40	5.5 V	1.2 mm		10 mm	Not Qualified	TOP	4194304 bit	4.5 V	100000 PROGRAM/ERASE CYCLES; TOP BOOT BLOCK					NOR TYPE		18.4 mm		70 ns	12
M30L0R8000B2ZAQF	STMicroelectronics	FLASH	OTHER	88	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	16K,64K	77 mA	16777216 words	1.8		NO	1.8	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA88,8X12,32		Flash Memories		.8 mm	85 Cel			16MX16	16M	-25 Cel	4,255	YES			BOTTOM	R-PBGA-B88	2 V	1.2 mm		8 mm	Not Qualified	BOTTOM	268435456 bit	1.7 V	SYNCHRONOUS BURST MODE OPERATION POSSIBLE	8		NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.000005 Amp	10 mm	YES	85 ns	1.8	NO
M50FLW040ANB5P	STMicroelectronics	FLASH	OTHER	32	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	SYNCHRONOUS		60 mA	524288 words	3.3		NO	3.3	8	SMALL OUTLINE, THIN PROFILE	TSSOP32,.56,20		Flash Memories		.5 mm	85 Cel			512KX8	512K	-20 Cel	8	YES		YES	DUAL	R-PDSO-G32	3.6 V	1.2 mm		8 mm	Not Qualified		4194304 bit	3 V				NOT SPECIFIED	260	NOR TYPE	.0001 Amp	12.4 mm		11 ns	3	NO
M29W800AB120ZA5T	STMicroelectronics	FLASH	OTHER	48	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	20 mA	524288 words	3		YES	3/3.3	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA48,6X8,32	8	Flash Memories	20	.8 mm	85 Cel			512KX16	512K	-20 Cel	1,2,1,15	YES	Tin/Silver/Copper (Sn95.5Ag4.0Cu0.5)	YES	BOTTOM	R-PBGA-B48	3.6 V	1.2 mm	100000 Write/Erase Cycles	6 mm	Not Qualified	BOTTOM	8388608 bit	2.7 V	20 YEARS DATA RETENTION; BOTTOM BOOT BLOCK		e1			NOR TYPE	.0001 Amp	9 mm		120 ns	2.7	YES
M28F411-80XN5TR	STMicroelectronics	FLASH	OTHER	40	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS			524288 words	5				8	SMALL OUTLINE, THIN PROFILE					.5 mm	85 Cel			512KX8	512K	-20 Cel					DUAL	R-PDSO-G40	5.25 V	1.2 mm		10 mm	Not Qualified	TOP	4194304 bit	4.75 V	100000 PROGRAM/ERASE CYCLES; TOP BOOT BLOCK					NOR TYPE		18.4 mm		80 ns	12
M50FLW040BN5	STMicroelectronics	FLASH	OTHER	40	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	SYNCHRONOUS	4K,64K	60 mA	524288 words	3.3		NO	3.3	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP40,.8,20		Flash Memories		.5 mm	85 Cel			512KX8	512K	-20 Cel	48,5	YES	TIN LEAD	YES	DUAL	R-PDSO-G40	3.6 V	1.2 mm		10 mm	Not Qualified	TOP	4194304 bit	3 V			e0			NOR TYPE	.0001 Amp	18.4 mm		11 ns	3	NO
M28F211-70YN5TR	STMicroelectronics	FLASH	OTHER	40	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS			262144 words	5				8	SMALL OUTLINE, THIN PROFILE					.5 mm	85 Cel			256KX8	256K	-20 Cel					DUAL	R-PDSO-G40	5.5 V	1.2 mm		10 mm	Not Qualified	TOP	2097152 bit	4.5 V	100000 PROGRAM/ERASE CYCLES; BLOCK ERASE; TOP BOOT BLOCK					NOR TYPE		18.4 mm		70 ns	12
M29R800T-100N5	STMicroelectronics	FLASH	OTHER	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS			1048576 words	3.3				8	SMALL OUTLINE, THIN PROFILE		16			.5 mm	85 Cel		3-STATE	1MX8	1M	-20 Cel					DUAL	R-PDSO-G48	3.6 V	1.2 mm		12 mm	Not Qualified	TOP	8388608 bit	2.7 V						NOR TYPE		18.4 mm		100 ns	3
M29W040-100N5RTR	STMicroelectronics	FLASH	OTHER	32	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	64K	40 mA	524288 words	3.3		YES	3.3	8	SMALL OUTLINE, THIN PROFILE	TSSOP32,.8,20		Flash Memories		.5 mm	85 Cel	YES	3-STATE	512KX8	512K	-20 Cel	8	YES	TIN LEAD		DUAL	R-PDSO-G32	3.6 V	1.2 mm	100000 Write/Erase Cycles	8 mm	Not Qualified		4194304 bit	3 V			e0			NOR TYPE	.000005 Amp	18.4 mm		100 ns	3	YES
M50FW080N5TG	STMicroelectronics	FLASH	OTHER	40	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	64K	60 mA	1048576 words	3.3		NO	3.3	8	SMALL OUTLINE, THIN PROFILE	TSSOP40,.8,20		Flash Memories		.5 mm	85 Cel			1MX8	1M	-20 Cel	16	YES			DUAL	R-PDSO-G40	3.6 V	1.2 mm		10 mm	Not Qualified		8388608 bit	3 V				NOT SPECIFIED	260	NOR TYPE	.0001 Amp	18.4 mm		11 ns	3	NO
M28V421-120N5	STMicroelectronics	FLASH	OTHER	40	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS			524288 words	3.3				8	SMALL OUTLINE, THIN PROFILE					.5 mm	85 Cel			512KX8	512K	-20 Cel					DUAL	R-PDSO-G40	3.6 V	1.2 mm		10 mm	Not Qualified	BOTTOM	4194304 bit	3 V	10K ERASE/PROGRAM CYCLES					NOR TYPE		18.4 mm		120 ns	12
M29W800B-100N5R	STMicroelectronics	FLASH	OTHER	48	TSOP1-R	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	20 mA	1048576 words			YES	3/3.3	8	SMALL OUTLINE, THIN PROFILE	TSSOP48,.8,20	16	Flash Memories		.5 mm	85 Cel	YES	3-STATE	1MX8	1M	-20 Cel	1,2,1,15	YES	TIN LEAD	YES	DUAL	R-PDSO-G48	3.6 V	1.2 mm	100000 Write/Erase Cycles	12 mm	Not Qualified	BOTTOM	8388608 bit	2.7 V	BOTTOM BOOT BLOCK		e0			NOR TYPE	.0001 Amp	18.4 mm		100 ns	3	YES
M29W040-120N5RTR	STMicroelectronics	FLASH	OTHER	32	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	64K	40 mA	524288 words	3.3		YES	3.3	8	SMALL OUTLINE, THIN PROFILE	TSSOP32,.8,20		Flash Memories		.5 mm	85 Cel	YES	3-STATE	512KX8	512K	-20 Cel	8	YES	TIN LEAD		DUAL	R-PDSO-G32	3.6 V	1.2 mm	100000 Write/Erase Cycles	8 mm	Not Qualified		4194304 bit	2.7 V			e0			NOR TYPE	.000005 Amp	18.4 mm		120 ns	3	YES
M50FLW080AN5P	STMicroelectronics	FLASH	OTHER	40	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	SYNCHRONOUS	4K,64K	60 mA	1048576 words	3.3		NO	3.3	8	SMALL OUTLINE, THIN PROFILE	TSSOP40,.8,20		Flash Memories		.5 mm	85 Cel			1MX8	1M	-20 Cel	48,13	YES	TIN/TIN BISMUTH		DUAL	R-PDSO-G40	3.6 V	1.2 mm		10 mm	Not Qualified		8388608 bit	3 V			e3/e6	40	260	NOR TYPE	.0001 Amp	18.4 mm		11 ns	3	NO
M30L0R7000T0ZAQ	STMicroelectronics	FLASH	OTHER	88	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	16K,64K	47 mA	8388608 words	1.8		NO	1.8	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA88,8X12,32		Flash Memories		.8 mm	85 Cel			8MX16	8M	-25 Cel	4,127	YES	TIN LEAD		BOTTOM	R-PBGA-B88	2 V	1.2 mm		8 mm	Not Qualified	TOP	134217728 bit	1.7 V	SYNCHRONOUS BURST MODE OPERATION POSSIBLE	4	e0			NOR TYPE	.000005 Amp	10 mm	YES	85 ns	1.8	NO
M29W400T-90N5RTR	STMicroelectronics	FLASH	OTHER	48	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	PARALLEL		16K,8K,32K,64K	20 mA	262144 words			YES	3/3.3	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP48,.8,20	8	Flash Memories		.5 mm	85 Cel	YES		256KX16	256K	-20 Cel	1,2,1,7	YES	Tin/Lead (Sn/Pb)	YES	DUAL	R-PDSO-G48			100000 Write/Erase Cycles		Not Qualified	TOP	4194304 bit				e0			NOR TYPE	.00005 Amp			90 ns		YES
M28V421-150N5TR	STMicroelectronics	FLASH	OTHER	40	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS			524288 words	3.3				8	SMALL OUTLINE, THIN PROFILE					.5 mm	85 Cel			512KX8	512K	-20 Cel					DUAL	R-PDSO-G40	3.6 V	1.2 mm		10 mm	Not Qualified	BOTTOM	4194304 bit	3 V	10K ERASE/PROGRAM CYCLES					NOR TYPE		18.4 mm		150 ns	12
M29F400B-70N5	STMicroelectronics	FLASH	OTHER	48	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	PARALLEL		16K,8K,32K,64K	60 mA	262144 words	5		YES	5	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP48,.8,20	8	Flash Memories		.5 mm	85 Cel			256KX16	256K	-20 Cel	1,2,1,7	YES	TIN LEAD	YES	DUAL	R-PDSO-G48			100000 Write/Erase Cycles		Not Qualified	BOTTOM	4194304 bit				e0			NOR TYPE	.0001 Amp			70 ns		YES
M29W800T-120M5TR	STMicroelectronics	FLASH	OTHER	44	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	20 mA	1048576 words			YES	3/3.3	8	SMALL OUTLINE	SOP44,.63	16	Flash Memories		1.27 mm	85 Cel		3-STATE	1MX8	1M	-20 Cel	1,2,1,15	YES	MATTE TIN	YES	DUAL	R-PDSO-G44	3.6 V	2.62 mm	100000 Write/Erase Cycles	13.3 mm	Not Qualified	TOP	8388608 bit	2.7 V	TOP BOOT BLOCK		e3			NOR TYPE	.0001 Amp	28.2 mm		120 ns	3	YES
M28W421-180N5TR	STMicroelectronics	FLASH	OTHER	40	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS			524288 words	3				8	SMALL OUTLINE, THIN PROFILE					.5 mm	85 Cel			512KX8	512K	-20 Cel					DUAL	R-PDSO-G40	3.3 V	1.2 mm		10 mm	Not Qualified	BOTTOM	4194304 bit	2.7 V	100000 PROGRAM/ERASE CYCLES; BLOCK ERASE					NOR TYPE		18.4 mm		180 ns	12
M30L0R8000B0ZAQF	STMicroelectronics	FLASH	OTHER	88	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	16K,64K	52 mA	16777216 words	1.8		NO	1.8	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA88,8X12,32		Flash Memories		.8 mm	85 Cel			16MX16	16M	-25 Cel	4,255	YES	TIN SILVER COPPER		BOTTOM	R-PBGA-B88	2 V	1.2 mm		8 mm	Not Qualified	BOTTOM	268435456 bit	1.7 V	SYNCHRONOUS BURST MODE OPERATION POSSIBLE	8	e1			NOR TYPE	.000005 Amp	10 mm	YES	85 ns	1.8	NO
M29F040-70N5R	STMicroelectronics	FLASH	OTHER	32	TSOP1-R	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	64K	60 mA	524288 words	5		YES	5	8	SMALL OUTLINE, THIN PROFILE	TSSOP32,.8,20		Flash Memories	20	.5 mm	85 Cel	YES	3-STATE	512KX8	512K	-20 Cel	8	YES	TIN LEAD		DUAL	R-PDSO-G32	5.5 V	1.2 mm	100000 Write/Erase Cycles	8 mm	Not Qualified		4194304 bit	4.5 V	100000 ERASE/PROGRAM CYCLES; 20 YEARS DATA RETENTION; BLOCK ERASE; BYTE PROGRAMMABLE		e0			NOR TYPE	.0001 Amp	18.4 mm		70 ns	5	YES
M28F211-70N5TR	STMicroelectronics	FLASH	OTHER	40	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS			262144 words	5				8	SMALL OUTLINE, THIN PROFILE					.5 mm	85 Cel			256KX8	256K	-20 Cel					DUAL	R-PDSO-G40	5.5 V	1.2 mm		10 mm	Not Qualified	TOP	2097152 bit	4.5 V	100000 PROGRAM/ERASE CYCLES; BLOCK ERASE; TOP BOOT BLOCK					NOR TYPE		18.4 mm		70 ns	12
M29W800B-120M5	STMicroelectronics	FLASH	OTHER	44	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	20 mA	1048576 words			YES	3/3.3	8	SMALL OUTLINE	SOP44,.63	16	Flash Memories		1.27 mm	85 Cel		3-STATE	1MX8	1M	-20 Cel	1,2,1,15	YES	MATTE TIN	YES	DUAL	R-PDSO-G44	3.6 V	2.62 mm	100000 Write/Erase Cycles	13.3 mm	Not Qualified	BOTTOM	8388608 bit	2.7 V			e3			NOR TYPE	.0001 Amp	28.2 mm		120 ns	3	YES
M29V040-150K5	STMicroelectronics	FLASH	OTHER	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	J BEND	PARALLEL		64K	30 mA	524288 words	3.3		YES	3.3	8	CHIP CARRIER	LDCC32,.5X.6		Flash Memories		1.27 mm	85 Cel			512KX8	512K	-20 Cel	8	YES	TIN LEAD		QUAD	R-PQCC-J32			100000 Write/Erase Cycles		Not Qualified		4194304 bit				e0			NOR TYPE	.00005 Amp			150 ns		YES
M30L0R7000B0ZAQE	STMicroelectronics	FLASH	OTHER	88	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	16K,64K	47 mA	8388608 words	1.8		NO	1.8	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA88,8X12,32		Flash Memories		.8 mm	85 Cel			8MX16	8M	-25 Cel	4,127	YES			BOTTOM	R-PBGA-B88	2 V	1.2 mm		8 mm	Not Qualified	BOTTOM	134217728 bit	1.7 V	SYNCHRONOUS BURST MODE OPERATION POSSIBLE	4		NOT SPECIFIED	260	NOR TYPE	.000005 Amp	10 mm	YES	85 ns	1.8	NO
M29W004B-150N5	STMicroelectronics	FLASH	OTHER	40	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	20 mA	524288 words	3		YES	3/3.3	8	SMALL OUTLINE, THIN PROFILE	TSSOP40,.8,20		Flash Memories		.5 mm	85 Cel		3-STATE	512KX8	512K	-20 Cel	1,2,1,7	YES	TIN LEAD	YES	DUAL	R-PDSO-G40	3.6 V	1.2 mm	100000 Write/Erase Cycles	10 mm	Not Qualified	BOTTOM	4194304 bit	2.7 V	BOTTOM BOOT BLOCK		e0			NOR TYPE	.00005 Amp	18.4 mm		150 ns	2.7	YES
M29W400T-90M5R	STMicroelectronics	FLASH	OTHER	44	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS			262144 words	3.3				16	SMALL OUTLINE		8			1.27 mm	85 Cel			256KX16	256K	-20 Cel					DUAL	R-PDSO-G44	3.6 V	2.62 mm		13.3 mm	Not Qualified	TOP	4194304 bit	3 V	TOP BOOT BLOCK					NOR TYPE		28.2 mm		90 ns	3
M29F400T-120XN5	STMicroelectronics	FLASH	OTHER	48	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	PARALLEL		16K,8K,32K,64K	60 mA	262144 words	5		YES	5	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP48,.8,20	8	Flash Memories		.5 mm	85 Cel			256KX16	256K	-20 Cel	1,2,1,7	YES	TIN LEAD	YES	DUAL	R-PDSO-G48			100000 Write/Erase Cycles		Not Qualified	TOP	4194304 bit				e0			NOR TYPE	.0001 Amp			120 ns		YES
M28F411-60XN5	STMicroelectronics	FLASH	OTHER	40	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS			524288 words	5				8	SMALL OUTLINE, THIN PROFILE					.5 mm	85 Cel			512KX8	512K	-20 Cel					DUAL	R-PDSO-G40	5.25 V	1.2 mm		10 mm	Not Qualified	TOP	4194304 bit	4.75 V						NOR TYPE		18.4 mm		60 ns	12
M29W400B-150N5RTR	STMicroelectronics	FLASH	OTHER	48	TSOP1-R	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	20 mA	262144 words	3.3		YES	3/3.3	16	SMALL OUTLINE, THIN PROFILE	TSSOP48,.8,20	8	Flash Memories		.5 mm	85 Cel	YES	3-STATE	256KX16	256K	-20 Cel	1,2,1,7	YES	TIN LEAD	YES	DUAL	R-PDSO-G48	3.6 V	1.2 mm	100000 Write/Erase Cycles	12 mm	Not Qualified	BOTTOM	4194304 bit	2.7 V			e0			NOR TYPE	.00005 Amp	18.4 mm		150 ns	2.7	YES
M29F400B-70XN5R	STMicroelectronics	FLASH	OTHER	48	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	PARALLEL		16K,8K,32K,64K	60 mA	262144 words	5		YES	5	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP48,.8,20	8	Flash Memories		.5 mm	85 Cel	YES		256KX16	256K	-20 Cel	1,2,1,7	YES	TIN LEAD	YES	DUAL	R-PDSO-G48			100000 Write/Erase Cycles		Not Qualified	BOTTOM	4194304 bit				e0			NOR TYPE	.0001 Amp			70 ns		YES
M29F400T-150N5	STMicroelectronics	FLASH	OTHER	48	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	PARALLEL		16K,8K,32K,64K	60 mA	262144 words	5		YES	5	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP48,.8,20	8	Flash Memories		.5 mm	85 Cel			256KX16	256K	-20 Cel	1,2,1,7	YES	TIN LEAD	YES	DUAL	R-PDSO-G48			100000 Write/Erase Cycles		Not Qualified	TOP	4194304 bit				e0			NOR TYPE	.0001 Amp			150 ns		YES
M29W400B-100N5RTR	STMicroelectronics	FLASH	OTHER	48	TSOP1-R	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	20 mA	262144 words	3.3		YES	3/3.3	16	SMALL OUTLINE, THIN PROFILE	TSSOP48,.8,20	8	Flash Memories		.5 mm	85 Cel	YES	3-STATE	256KX16	256K	-20 Cel	1,2,1,7	YES	TIN LEAD	YES	DUAL	R-PDSO-G48	3.6 V	1.2 mm	100000 Write/Erase Cycles	12 mm	Not Qualified	BOTTOM	4194304 bit	2.7 V			e0			NOR TYPE	.00005 Amp	18.4 mm		100 ns	2.7	YES
M28F411-100XN5	STMicroelectronics	FLASH	OTHER	40	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS			524288 words	5				8	SMALL OUTLINE, THIN PROFILE					.5 mm	85 Cel			512KX8	512K	-20 Cel					DUAL	R-PDSO-G40	5.25 V	1.2 mm		10 mm	Not Qualified	TOP	4194304 bit	4.75 V	100000 PROGRAM/ERASE CYCLES; TOP BOOT BLOCK					NOR TYPE		18.4 mm		100 ns	12
M29W800T-90M5	STMicroelectronics	FLASH	OTHER	44	SOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	PARALLEL		16K,8K,32K,64K	20 mA	524288 words			YES	3/3.3	16	SMALL OUTLINE	SOP44,.63	8	Flash Memories		1.27 mm	85 Cel			512KX16	512K	-20 Cel	1,2,1,15	YES	Matte Tin (Sn)	YES	DUAL	R-PDSO-G44			100000 Write/Erase Cycles		Not Qualified	TOP	8388608 bit				e3			NOR TYPE	.0001 Amp			90 ns		YES
M39208-10WNB5T	STMicroelectronics	FLASH	OTHER	32	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		20 mA	262144 words	3	EEPROM+FLASH		3/3.3	8	SMALL OUTLINE, THIN PROFILE	TSSOP32,.56,20		Other Memory ICs		.5 mm	85 Cel			256KX8	256K	-20 Cel			TIN LEAD		DUAL	R-PDSO-G32	3.6 V	1.2 mm		8 mm	Not Qualified		2097152 bit	2.7 V	ALSO CONTAINS 64 KBIT EEPROM MEMORY		e0			NOR TYPE	.000002 Amp	12.4 mm		100 ns	2.7
M29F040-70XK5	STMicroelectronics	FLASH	OTHER	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	64K	60 mA	524288 words	5		YES	5	8	CHIP CARRIER	LDCC32,.5X.6		Flash Memories		1.27 mm	85 Cel		3-STATE	512KX8	512K	-20 Cel	8	YES	TIN LEAD		QUAD	R-PQCC-J32	5.25 V	3.56 mm	100000 Write/Erase Cycles	11.455 mm	Not Qualified		4194304 bit	4.75 V			e0			NOR TYPE	.0001 Amp	13.995 mm		70 ns	5	YES
M29F400T-150N5R	STMicroelectronics	FLASH	OTHER	48	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	PARALLEL		16K,8K,32K,64K	60 mA	262144 words	5		YES	5	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP48,.8,20	8	Flash Memories		.5 mm	85 Cel	YES		256KX16	256K	-20 Cel	1,2,1,7	YES	TIN LEAD	YES	DUAL	R-PDSO-G48			100000 Write/Erase Cycles		Not Qualified	TOP	4194304 bit				e0			NOR TYPE	.0001 Amp			150 ns		YES
M29W008T-120N5	STMicroelectronics	FLASH	OTHER	40	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	20 mA	1048576 words	3.3		YES	3/3.3	8	SMALL OUTLINE, THIN PROFILE	TSSOP40,.8,20		Flash Memories		.5 mm	85 Cel		3-STATE	1MX8	1M	-20 Cel	1,2,1,15	YES	TIN LEAD	YES	DUAL	R-PDSO-G40	3.6 V	1.2 mm	100000 Write/Erase Cycles	10 mm	Not Qualified	TOP	8388608 bit	2.7 V	TOP BOOT BLOCK		e0			NOR TYPE	.0001 Amp	18.4 mm		120 ns	3	YES
M29W800T-150N5TR	STMicroelectronics	FLASH	OTHER	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	20 mA	1048576 words			YES	3/3.3	8	SMALL OUTLINE, THIN PROFILE	TSSOP48,.8,20	16	Flash Memories		.5 mm	85 Cel		3-STATE	1MX8	1M	-20 Cel	1,2,1,15	YES	TIN LEAD	YES	DUAL	R-PDSO-G48	3.6 V	1.2 mm	100000 Write/Erase Cycles	12 mm	Not Qualified	TOP	8388608 bit	2.7 V	TOP BOOT BLOCK		e0			NOR TYPE	.0001 Amp	18.4 mm		150 ns	3	YES

Flash Memory

Flash memory is a type of non-volatile computer memory that is commonly used in digital devices such as USB drives, solid-state drives, and digital cameras. It is a type of EEPROM (Electrically Erasable Programmable Read-Only Memory) that allows data to be erased and reprogrammed in blocks instead of one byte at a time. Flash memory uses a floating gate transistor to store data, which allows it to retain information even when the power is turned off.

Flash memory is widely used in digital devices because of its high capacity, small size, and fast access times. It is also more durable than other types of memory, such as hard disk drives, because it has no moving parts. This makes it ideal for use in portable devices that may be subject to physical shock or vibration.

There are two types of flash memory: NOR flash and NAND flash. NOR flash is faster than NAND flash, but it has lower density and higher cost per bit. NOR flash is typically used for code storage, such as firmware or boot code, because it provides faster access times. NAND flash has higher density and lower cost per bit, which makes it ideal for data storage applications.

Flash memory has a limited lifespan, as it can only be erased and reprogrammed a limited number of times. This is because the process of erasing and reprogramming the memory causes wear and tear on the floating gate transistor. However, modern flash memory devices have a sophisticated wear-leveling algorithm that distributes writes evenly across the memory, which extends the lifespan of the device.